CN101676781A - System for displaying images and fabricating method thereof - Google Patents
System for displaying images and fabricating method thereof Download PDFInfo
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- CN101676781A CN101676781A CN200810172104A CN200810172104A CN101676781A CN 101676781 A CN101676781 A CN 101676781A CN 200810172104 A CN200810172104 A CN 200810172104A CN 200810172104 A CN200810172104 A CN 200810172104A CN 101676781 A CN101676781 A CN 101676781A
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- metal
- image display
- display system
- joint sheet
- pad
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Abstract
A system for displaying images and fabricating method thereof are provided. The system includes a thin film transistor substrate including a substrate having a display area and a pad area. The thin film transistor substrate further includes a conductive line disposed on the substrate in the display area. The conductive line includes a lower metal line, an upper metal line and a middle metal line therebetween. The width of the middle metal line is narrower than that of the upper metal line.
Description
Technical field
The present invention relates to a kind of image display system, particularly relate to structure and the manufacture method thereof of a kind of thin film transistor base plate at the lead and the joint sheet of viewing area and pad area.
Background technology
Liquid crystal flat panel display has been widely applied on the display element of product of all kinds in recent years.In order to improve the display quality of liquid crystal flat panel display, then to improve the aperture opening ratio of display panels, and avoid the generation of light leak (light leakage) problem.
Yet, in known technology, be arranged at the sweep trace (scan line) of thin film transistor base plate or the shape of data line (data line) and be generally taper (taper), when the backlight arrangement (back light module) of the image display system that comprises display panels shines known thin film transistor base plate, can be because the taper lead contain high-reflectivity metal, and cause reflective and then cause the serious light leak problem of display panels.
In order to solve the light leak problem of display panels, known technology can additionally be provided with one deck in the below of sweep trace (scan line) or data line (data line) and cover metal level, causes reflective to stop rayed to the above-mentioned lead that backlight arrangement produces.Yet the aperture opening ratio (aperture ratio) that metal level can make display panels integral body that covers of above-mentioned extra setting descends, and causes display panels brightness to reduce, and causes problems such as display quality is not good.In addition, known technology also can be provided with one deck silicon nitride (SiN on sweep trace (scan line) or data line (dataline)
X), to solve the light leak problem of display panels.But, form above-mentioned silicon nitride (SiN
X) the extra technology of required for example chemical vapor deposition (CVD), photoetching and the etching etc. of the layer problem that can cause the technology cost to rise.
Therefore, need a kind of display panels that overcomes the light leak problem, to reach preferred display quality.
Summary of the invention
Embodiments of the invention provide a kind of manufacture method of image display system, and comprising provides substrate, and it comprises viewing area and pad area; Form lower metal layer, intermediate metal layer in regular turn, go up metal level on this substrate; Anisotropic etching should be gone up metal level, this intermediate metal layer and this lower metal layer to form lead in this viewing area, and this lead has following metal wire, intermetallic metal line and goes up metal wire; And this intermetallic metal line of isotropic etching, make the width of this intermetallic metal line be narrower than the width of metal wire on this and the width of this time metal wire.
Another embodiment of the present invention provides a kind of image display system, comprises thin film transistor base plate, comprising: this thin film transistor base plate comprises substrate, comprises viewing area and pad area; Lead is arranged at above this thin film transistor substrate of this viewing area, and this lead has following metal wire, the intermetallic metal line reaches metal wire down, and wherein the width of this intermetallic metal line is narrower than the width of metal wire on this and the width of this time metal wire.
Description of drawings
Fig. 1 is the synoptic diagram of the display panels of the embodiment of the invention.
Fig. 2 is the viewing area that is formed at thin film transistor base plate of the embodiment of the invention and the lead and the joint sheet of pad area.
Fig. 3 a～Fig. 3 d is the lead of the embodiment of the invention and the process section of joint sheet.
Fig. 4 a～Fig. 4 e is the lead of another embodiment of the present invention and the process section of joint sheet.
Fig. 4 d '～Fig. 4 e ' is the present invention lead of another embodiment and the process section of joint sheet again.
Fig. 5 is the configuration schematic diagram of the image display system that comprises display panels of the embodiment of the invention.
Description of reference numerals
100～substrate; 102～lower metal layer;
104～intermediate metal layer; 106～upward metal levels;
102a～following metal wire; 104a～intermetallic metal line;
106a～last metal wire; 102b～following metal gasket;
104b～intermetallic metal pad; 106b～last metal gasket;
108,110～photoresist pattern; 220～conductive protecting layer;
30～light; 224,226～photomask;
10～shading region; 20～photic zone;
40～semi-opaque region; 222～light sensation flatness layer;
222a～photoactive material; 250～opening;
202～thin film transistor base plate; 204～colored filter substrate;
206～signal Processing band; 208～circuit board;
212～viewing area; 214～pad area;
216～lead; 218～joint sheet;
500～display panels; 600～LCD;
700～input block;
800～comprise the image display system of display panels.
Embodiment
See also Fig. 1 and Fig. 2, Fig. 1 is the synoptic diagram of the display panels 500 of the embodiment of the invention.In embodiments of the present invention, display panels 500 can be low temperature polycrystalline silicon (low temperaturepoly-silicon) display panels.Display panels 500 comprises thin film transistor base plate 202, colored filter substrate 204 and fills in liquid crystal material (figure shows) in the space between aforesaid substrate.Thin film transistor base plate 202 is provided with multi-strip scanning line (scan line) and data line (data line), to define a plurality of pixel regions, then comprises pixel electrode and as the thin film transistor (TFT) (TFT) of switch in each pixel region.
The thin film transistor base plate 202 that Fig. 2 shows the embodiment of the invention is in the viewing area 212 and the lead 216 of pad area 214 and as the joint sheet 218 of the internal terminal of thin film transistor base plate 202.As shown in Figure 2, thin film transistor base plate has viewing area 212 and pad area 214.Thin film transistor base plate comprises many leads 216, is covered in substrate top, and each lead 216 has extension, extends to pad area 214, with as joint sheet 218.Lead 216 for being used to define the sweep trace (scan line) or the data line (data line) of pixel element array, in embodiments of the present invention, for example is a data line (dataline) for example.By modes such as automatic splicing tpae of for example coil type or flexible printed circuit boards, to see through the joint sheet 218 and circuit external plate 208 that signal Processing band 206 electrically connects pad area 214 shown in Figure 2.Moreover, can between joint sheet 218 and signal Processing band 206, anisotropic conductive be set, to strengthen attaching ability between the two.
Fig. 3 a～Fig. 3 d is the lead of embodiment of the invention image display system and the process section of joint sheet.At first, shown in Fig. 3 a, provide for example substrate 100 of transparent material such as glass or quartz formation, it comprises viewing area 212 and pad area 214, and above-mentioned viewing area 212 is for forming the zone of thin film transistor (TFT) array.
Then, form metal level on substrate 100, this metal level of patterning is to form grid, sweep trace then; Form gate insulator again, as the element (figure shows) of the thin film transistor (TFT)s such as polysilicon active layers of charge carrier passage.
Secondly, form lower metal layer 102, intermediate metal layer 104 in regular turn, go up metal level 106 on aforesaid substrate 100, metal level 102 and lower metal layer are metal or its alloys such as titanium, tantalum, molybdenum, chromium for example on this, and intermediate metal layer 104 for example is aluminum metal or its alloy of high reflectance.Then, utilize photoetching process on last metal level 106, to form photoresist pattern 108, with as etching mask.
Then, please refer to Fig. 3 b, utilize metal level 106, intermediate metal layer 104 and lower metal layer 102 on the dry ecthing mode anisotropic etching, with the 212 formation leads 216 in the viewing area, above-mentioned lead 216 has following metal wire 102a, intermetallic metal line 104a and goes up metal wire 106a.Simultaneously, also can form joint sheet 218 at pad area 214, above-mentioned joint sheet 218 comprises metal gasket 102b, intermetallic metal pad 104b and upward metal gasket 106b down, moreover joint sheet 218 is taper (tapered), and the tool smooth side wall.At this moment, also define the source/drain electrodes (figure does not show) of thin film transistor (TFT) array simultaneously.Then, divest photoresist pattern 108.
Please refer to Fig. 3 c, utilize the photoresist pattern 110 of photoetching process once more, with protection joint sheet 218 to form as etching mask at pad area 214.
Then, please refer to Fig. 3 c and Fig. 3 d, utilize wet etching mode isotropic etching intermetallic metal line 104a, make the width of intermetallic metal line 104a be narrower than the width of metal wire 106a, the width of above-mentioned intermetallic metal line 104a preferably also is narrower than down the width of metal wire 102a.Be meant at this " width ", middle, the bottom width of metal wire down.The etching solution that the wet etching mode adopts preferably for the etching speed of the intermetallic metal line 104a of for example aluminium much larger than for last metal wire 106a and the etching of metal wire 102a down, make intermetallic metal line 104a by sidewall etched and indent, but go up metal wire 106a and down metal wire 102a only by micro-etching or not etched.Also can select suitable reacting gas in other embodiments, the etching selectivity that makes intermetallic metal line and following (or on) metal wire carries out dry ecthing greater than 10.Then, divest photoresist pattern 110.For the joint sheet 218 (particularly intermetallic metal pad) that prevents pad area 214 is subjected to aqueous vapor and oxidation, can be when forming pixel electrode, upper surface and sidewall at joint sheet 218 form conductive protecting layer 220, and this conductive protecting layer can be indium tin oxide (indium tinoxide; ITO) or indium-zinc oxide (indium zinc oxide; Transparent conductive material such as IZO).After forming pixel electrode, can finish the making of thin film transistor base plate.
Fig. 3 d shows that present embodiment is formed at the lead 216 and the joint sheet 218 of image display system, also is the sectional view along the I-I ' line of Fig. 2, and this system comprises the substrate 100 with viewing area 212 and pad area 214; Lead 216 is arranged at substrate 100 tops of viewing area 216, and this lead 216 has following metal wire 102a, intermetallic metal line 104a and goes up metal wire 106a, and the width of this intermetallic metal line 104a is narrower than the width of metal wire 106a and following metal wire 102a.According to lead 216 structures shown in Fig. 3 d, because the width of intermetallic metal line 104a is narrower, therefore, when backlight passes through lead 216, last metal wire 106a or following metal wire 102a can cover the intermetallic metal line 104a of high reflectance, and avoid the display panels light leak problem that causes because of reflective, therefore, can improve the display quality of image display system.
Fig. 4 a～Fig. 4 e is the lead of another embodiment of the present invention and the process section of joint sheet.The processing step of Fig. 4 a and Fig. 4 b is identical with the processing step of Fig. 3 a and Fig. 3 b, does not give unnecessary details at this.
Please refer to Fig. 4 c, the step shown in Fig. 4 c and Fig. 3 c difference are, do not form the photoresist pattern that covers pad area 214.That is when utilizing wet etching mode isotropic etching intermetallic metal line 104a, also etching intermetallic metal pad 104b makes the width of intermetallic metal line 104a be narrower than the width that metal wire 106a reaches following metal wire 102a.On the other hand, the width of the intermetallic metal pad 104b of joint sheet 218 is narrower than metal gasket 106b on this and the width of metal gasket 102b down.
In the present embodiment,, cause the conductive protecting layer 220 of follow-up formation to break (crack) easily, therefore, break, can carry out the technology shown in Fig. 4 d～Fig. 4 e for fear of conductive protecting layer 220 because the intermetallic metal pad 104b of joint sheet 218 is inner concavity.
Shown in Fig. 4 d, comprehensive in the viewing area 212 and pad area 214 form light sensation flatness layers (photosensitive planarization) 222, the light sensation flatness layer 222 of present embodiment for example adopts the positive light anti-etching agent material, light 30 by for example ultraviolet light, see through the photomask 224 that comprises shading region 10 and photic zone 20, selectivity is in 222 exposures of 214 pairs of light sensation flatness layers of pad area, then utilize developer solution to carry out development step, be exposed and produce photochemically reactive part to remove light sensation flatness layer 222, and reach metal gasket 106b and stay photoactive material 222a between the metal gasket 102b down at the sidewall of intermetallic metal pad 104b, shown in Fig. 4 e.Because the width of last metal gasket 106b is wider than the width of intermetallic metal pad 104b, therefore, the material that last metal gasket 106b can shaded portions light sensation flatness layer avoids exposing, and therefore, can stay above-mentioned photoactive material 222a.Then, form conductive protecting layer 220 on last metal gasket 106b, this conductive protecting layer 220 also may be formed at the sidewall of joint sheet 218.
Break for fear of conductive protecting layer 220, after the technology shown in Fig. 4 c, also can carry out the technology shown in Fig. 4 d '～Fig. 4 e '.
Fig. 4 d, be with the technology difference shown in Fig. 4 d, utilize photomask 226 to replace the photomask 224 shown in Fig. 4 d, photomask 226 is shadow tone (half-tone) photomask that comprises shading region 10, photic zone 20 and semi-opaque region 40, wherein shading region is aimed at viewing area 212, photic zone 20 is aimed at the central portion of going up metal gasket 106b, and semi-opaque region 40 then is the zone of aligned abutment in last metal gasket 106b central portion.Light 30 by for example ultraviolet light, see through above-mentioned photomask 226, selectivity is in 222 exposures of 214 pairs of light sensation flatness layers of pad area, then utilize developer solution to carry out development step, be exposed and produce photochemically reactive part to remove light sensation flatness layer 222, stay photoactive material 222a on the substrate 100 of pad area and joint sheet 218, this photoactive material has opening 250, exposes the last metal gasket 106b of above-mentioned joint sheet 218.Then, on last metal gasket 106b and photoactive material 222a, form conductive protecting layer 220.By forming photoactive material 222a, not only can avoid joint sheet 218 oxidations, and, therefore, can avoid conductive protecting layer 220 to break because conductive protecting layer 220 need not be formed on the joint sheet with local indent sidewall at pad area 214.
Then please refer to Fig. 5, it is the configuration schematic diagram of the image display system that comprises display panels 500 800 of the embodiment of the invention, wherein comprise LCD 600, this LCD has the described display panels 500 of the embodiment of the invention, and a pair of polarisation plate holder is up and down established this display panels 500, backlight arrangement is arranged at down under the Polarizer, and this LCD 600 can be the some of electronic installation.Generally speaking, image display system 800 comprises LCD 600 and input block 700, and input block 700 couples with LCD 600, and transmission signals makes LCD 600 show images to LCD 600.The LCD 600 of the embodiment of the invention can comprise for example display of twisted nematic formula liquid crystal (TN), STN Super TN formula liquid crystal (STN), many quadrants vertical direction distributing type liquid crystal (MVA), plane suitching type liquid crystal (IPS), edge electrical field switching type liquid crystal (FFS) or other liquid crystal kinds.Electronic installation can be mobile phone, digital camera, PDA(Personal Digital Assistant), notebook computer, desktop computer, TV, automobile-used display, GPS (GPS), aviation display, digital frame (Digital Photo Frame) or Portable DVD player.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any persons skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (13)
1. the manufacture method of an image display system comprises:
Substrate is provided, and it comprises viewing area and pad area;
Form lower metal layer, intermediate metal layer in regular turn, go up metal level on this substrate;
Anisotropic etching should be gone up metal level, this intermediate metal layer and this lower metal layer to form lead in this viewing area, and this lead has following metal wire, intermetallic metal line and goes up metal wire; And
This intermetallic metal line of isotropic etching is so that the width of this intermetallic metal line is narrower than the width of metal wire on this and the width of this time metal wire.
2. the manufacture method of image display system as claimed in claim 1 in this anisotropic etching step, also comprises:
Form joint sheet at this pad area simultaneously, this joint sheet comprises that metal gasket, intermetallic metal pad reach upward metal gasket down, and this joint sheet is taper, and the tool smooth side wall; And
Form conductive protecting layer on the upper surface and sidewall of joint sheet.
3. the manufacture method of image display system as claimed in claim 1, in this anisotropic etching step, also comprise simultaneously and form joint sheet at this pad area, this joint sheet comprises that metal gasket, intermetallic metal pad reach upward metal gasket down, and in the etched step of these tropisms, also comprise this intermetallic metal pad of etching simultaneously, make the width of this intermetallic metal pad be narrower than the width of metal gasket and this time metal gasket on this.
4. the manufacture method of image display system as claimed in claim 3 also comprises:
In this viewing area and this pad area form the light sensation flatness layer;
Selectivity is exposed to this light sensation flatness layer at this pad area, reaches to be somebody's turn to do between metal gasket and this time metal gasket with the sidewall at this intermetallic metal pad to stay photoactive material; And
On this, form conductive protecting layer on the metal gasket.
5. the manufacture method of image display system as claimed in claim 3 also comprises:
In this viewing area and this pad area form the light sensation flatness layer;
Utilize light to see through and have the photomask of semi-opaque region and photic zone this light sensation flatness layer exposure;
Stay photoactive material on this substrate and this joint sheet, this photoactive material has opening, exposes metal gasket on this; And
On this, form conductive protecting layer on metal gasket and this photoactive material.
6. image display system comprises:
Thin film transistor base plate comprises:
Substrate, it has viewing area and pad area;
Lead is arranged at above this substrate of this viewing area, and this lead has following metal wire, the intermetallic metal line reaches metal wire down, and wherein the width of this intermetallic metal line is narrower than the width of metal wire on this and the width of this time metal wire.
7. image display system as claimed in claim 6 also comprises joint sheet, is located at the pad area of this substrate, and this joint sheet comprises that metal gasket, intermetallic metal pad reach upward metal gasket down.
8. image display system as claimed in claim 7, this joint sheet are taper, and the tool smooth side wall, and this image display system also comprises conductive protecting layer, are formed on the upper surface and sidewall of this joint sheet.
9. image display system as claimed in claim 7, the width of the intermetallic metal pad of this joint sheet are narrower than the width of metal gasket and this time metal gasket on this.
10. image display system as claimed in claim 9 also comprises:
Photoactive material is formed at the sidewall of this intermetallic metal pad and should goes up between metal gasket and this time metal gasket; And
Conductive protecting layer is covered on this on metal gasket.
11. image display system as claimed in claim 9 also comprises:
Photoactive material is formed on this substrate and this joint sheet, and this photoactive material has opening, exposes metal gasket on this; And
Conductive protecting layer is covered on this on the metal gasket and this photoactive material.
12. image display system as claimed in claim 6 also comprises:
Colored filter substrate; And
Backlight arrangement constitutes LCD with this thin film transistor base plate and colored filter substrate.
13. image display system as claimed in claim 12, also comprise electronic installation, wherein this electronic installation is mobile phone, digital camera, personal digital assistant, notebook computer, desktop computer, TV, automobile-used display, GPS, aviation display, digital frame or Portable DVD player, and this electronic installation comprises:
This LCD; And
Input block couples with this LCD, and wherein this input block transmission signals is to this LCD, so that this liquid crystal display displays image.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9792108P | 2008-09-18 | 2008-09-18 | |
| US61/097,921 | 2008-09-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101676781A true CN101676781A (en) | 2010-03-24 |
| CN101676781B CN101676781B (en) | 2013-02-13 |
Family
ID=42029397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810172104 Active CN101676781B (en) | 2008-09-18 | 2008-11-10 | System for displaying images and fabricating method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101676781B (en) |
| TW (1) | TWI374504B (en) |
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| CN104238784A (en) * | 2013-06-08 | 2014-12-24 | 宸鸿科技(厦门)有限公司 | Touch panel |
| CN108054141A (en) * | 2017-12-12 | 2018-05-18 | 深圳市华星光电技术有限公司 | The preparation method of display panel |
| CN108702847A (en) * | 2016-02-18 | 2018-10-23 | 三井金属矿业株式会社 | Printed circuit board manufacture copper foil, the copper foil with carrier and copper-clad laminated board and the manufacturing method for using their printed circuit board |
| CN109585459A (en) * | 2018-12-05 | 2019-04-05 | 惠科股份有限公司 | Preparation method, array substrate, display panel and the display device of array substrate |
| CN109581765A (en) * | 2018-10-26 | 2019-04-05 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111554696A (en) * | 2020-05-13 | 2020-08-18 | 京东方科技集团股份有限公司 | Total reflection type display substrate, manufacturing method thereof and total emission type display device |
| CN111679525A (en) * | 2020-06-22 | 2020-09-18 | 武汉华星光电技术有限公司 | Display panel and manufacturing method thereof |
| CN111682050A (en) * | 2020-06-22 | 2020-09-18 | 武汉华星光电半导体显示技术有限公司 | Touch display device and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4886488B2 (en) * | 2006-12-02 | 2012-02-29 | インフォビジョン オプトエレクトロニクス ホールデングズ リミティッド | Liquid crystal panel for liquid crystal display |
-
2008
- 2008-10-29 TW TW97141561A patent/TWI374504B/en not_active IP Right Cessation
- 2008-11-10 CN CN 200810172104 patent/CN101676781B/en active Active
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| CN104238784A (en) * | 2013-06-08 | 2014-12-24 | 宸鸿科技(厦门)有限公司 | Touch panel |
| CN104238784B (en) * | 2013-06-08 | 2018-03-02 | 宸鸿科技(厦门)有限公司 | Contact panel |
| CN108702847B (en) * | 2016-02-18 | 2021-03-09 | 三井金属矿业株式会社 | Copper foil for manufacturing printed wiring board, copper foil with carrier, copper-clad laminate, and method for manufacturing printed wiring board using same |
| CN108702847A (en) * | 2016-02-18 | 2018-10-23 | 三井金属矿业株式会社 | Printed circuit board manufacture copper foil, the copper foil with carrier and copper-clad laminated board and the manufacturing method for using their printed circuit board |
| WO2019114112A1 (en) * | 2017-12-12 | 2019-06-20 | 深圳市华星光电技术有限公司 | Method for preparing display panel |
| CN108054141B (en) * | 2017-12-12 | 2020-11-06 | 深圳市华星光电技术有限公司 | Preparation method of display panel |
| CN108054141A (en) * | 2017-12-12 | 2018-05-18 | 深圳市华星光电技术有限公司 | The preparation method of display panel |
| CN109581765A (en) * | 2018-10-26 | 2019-04-05 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| WO2020082494A1 (en) * | 2018-10-26 | 2020-04-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor as well as display module |
| CN109585459A (en) * | 2018-12-05 | 2019-04-05 | 惠科股份有限公司 | Preparation method, array substrate, display panel and the display device of array substrate |
| US11289516B2 (en) | 2018-12-05 | 2022-03-29 | HKC Corporation Limited | Array substrate fabrication method, array substrate, and display panel |
| WO2021227765A1 (en) * | 2020-05-13 | 2021-11-18 | 京东方科技集团股份有限公司 | Total reflection type display substrate and producing method therefor, and total reflection type display device |
| CN111554696A (en) * | 2020-05-13 | 2020-08-18 | 京东方科技集团股份有限公司 | Total reflection type display substrate, manufacturing method thereof and total emission type display device |
| CN111554696B (en) * | 2020-05-13 | 2024-03-29 | 京东方科技集团股份有限公司 | Total reflection type display substrate, manufacturing method thereof and total reflection type display device |
| CN111682050A (en) * | 2020-06-22 | 2020-09-18 | 武汉华星光电半导体显示技术有限公司 | Touch display device and manufacturing method thereof |
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| CN111679525B (en) * | 2020-06-22 | 2021-06-01 | 武汉华星光电技术有限公司 | Display panel and manufacturing method thereof |
| CN111682050B (en) * | 2020-06-22 | 2022-04-01 | 武汉华星光电半导体显示技术有限公司 | Touch display device and manufacturing method thereof |
| CN111679525A (en) * | 2020-06-22 | 2020-09-18 | 武汉华星光电技术有限公司 | Display panel and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI374504B (en) | 2012-10-11 |
| CN101676781B (en) | 2013-02-13 |
| TW201013786A (en) | 2010-04-01 |
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