CN108054141A - The preparation method of display panel - Google Patents
The preparation method of display panel Download PDFInfo
- Publication number
- CN108054141A CN108054141A CN201711320080.9A CN201711320080A CN108054141A CN 108054141 A CN108054141 A CN 108054141A CN 201711320080 A CN201711320080 A CN 201711320080A CN 108054141 A CN108054141 A CN 108054141A
- Authority
- CN
- China
- Prior art keywords
- layer
- tft
- display panel
- substrate
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 42
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of preparation method of display panel, and the preparation method of the display panel includes：Substrate is provided, the substrate includes viewing area and is arranged on the binding area of the non-display area；Tft layer is formed in the viewing area of the substrate, the tft layer includes thin film transistor (TFT)；Organic planarization layer is formed in one side of the tft layer away from the substrate and the corresponding viewing area and the binding area；Exposure machine is provided, the exposure machine includes mounting table, baffle and light source, and the mounting table is formed with the substrate of the organic planarization layer for placing；Using the baffle as mask, the light source is opened, the organic planarization layer in the binding area is removed.The preparation method of the display panel of the present invention advantageously reduces the cost for the display panel prepared.
Description
Technical field
The present invention relates to plane display field more particularly to a kind of preparation methods of display panel.
Background technology
Liquid crystal display device (Liquid Crystal Display, LCD) is as a kind of common display device, due to it
There is favor that is low in energy consumption, small, light-weight, therefore receiving user.Liquid crystal display device is by including backlight mould
Group and display panel.The backlight module is used to provide light source for the display panel, and the display panel passes through as light valve
It controls the corresponding backlight illumination of each pixel and then realizes that picture is shown.Liquid crystal display panel by including array color membrane substrates,
The film layers such as thin film transistor (TFT), data cable, pixel electrode, public electrode, flatness layer are usually set on array color membrane substrates, so as to lead
Causing the preparation process of array color membrane substrates needs more mask plate, higher so as to cause the manufacturing cost of array substrate, into
And improve the manufacturing cost of liquid crystal display panel.
The content of the invention
The present invention provides a kind of preparation method of display panel, and the preparation method of the display panel includes：
Substrate is provided, the substrate includes viewing area and is arranged on the binding area of the non-display area；
Tft layer is formed in the viewing area of the substrate, the tft layer includes thin film transistor (TFT)；
In one side of the tft layer away from the substrate and the corresponding viewing area and binding area's shape
Into organic planarization layer；
Exposure machine is provided, the exposure machine includes mounting table, baffle and light source, and the mounting table is formed for placing
State the substrate of organic planarization layer；
Using the baffle as mask, the light source is opened, the organic planarization layer in the binding area is removed.
Compared to the prior art, the preparation method of display panel of the invention is using the baffle on exposure machine as mask, removal
The organic planarization layer in binding area, so as to reducing the quantity of mask plate, and then save the cost for the display panel prepared.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the flow chart of the preparation method of the display panel in a preferred embodiment of the present invention mode.
Fig. 2~Figure 31 is the structure of the corresponding display panel of each step in the preparation method of the display panel of the present invention
Schematic diagram.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
Referring to Fig. 1, Fig. 1 is the flow chart of the preparation method of the display panel in a preferred embodiment of the present invention mode.
The preparation method of the display panel include but are not limited to include step S100, step S200, step S300, step S400 and
Step S500.
Step S100, provides substrate 10, and the substrate 10 includes viewing area 10a and is arranged on the viewing area 10a peripheries
Binding area 10b.Referring to Fig. 2, the substrate 10 can be but be not limited only to for the transparent base such as glass substrate, plastic base
Plate.When the substrate 10 is applied to the display panel, the viewing area 10a is used to show video or picture etc..
The lines such as the line of the line bound area 10b and be used to set data cable and chip, scan line and chip.The binding area
10b is typically some or all of non-display area.The binding area 10b can be arranged on the one side of the viewing area 10a
Or more sides or around one week of the viewing area 10a.
Step S200 forms tft layer 20, the tft layer 20 in the viewing area 10a of the substrate 10
Including thin film transistor (TFT).
In one embodiment, the step S200 includes but are not limited to step S201, step S202, step S203,
Step S204 and step S205.Each step is described in detail as follows.
Step S201 corresponds to the viewing area 10a in the one side of the substrate 10 and forms the first metal layer 311.Preferably,
The viewing area 10a is corresponded in the one side of the substrate 10 and forms the first metal layer 311, while also in the one side pair of the substrate
The binding area 10b is answered to form the first metal layer 311.Refer to Fig. 3.
Step S202 forms the first photoresist layer 312 for covering the first metal layer 311.Refer to Fig. 4.
Step S203 provides the first mask plate 313, using first mask plate 313 to first photoresist layer 312 into
Row patterning.Refer to Fig. 5.
Step S204 patterns the first metal layer 311 according to the first photoresist layer 312 after patterning, with
Form spaced grid 210 and public electrode 40.Refer to Fig. 6.
Step S205 removes remaining first photoresist layer 312.Refer to Fig. 7.
In one embodiment, after the step S205, the step S200 further includes step S206, step
S207, step S208, step S209, step S210 and step S211, each step are described in detail as follows.
Step S206 forms the first insulating layer 220 for covering the grid 210 and the public electrode 40.Refer to figure
8。
Step S207 forms the amorphous silicon layer 314 being arranged on first insulating layer 220.Refer to Fig. 9.
Step S208 forms the second photoresist layer 315 for covering the amorphous silicon layer 314.Please refer to Fig.1 0.
Step S209 provides the second mask plate 316, using second mask plate 316 to second photoresist layer 315 into
Row patterning.Please refer to Fig.1 1.
Step S210 patterns the amorphous silicon layer 314 according to the second photoresist layer 315 after patterning, with shape
The amorphous silicon island 314a set into the correspondence grid 210.Please refer to Fig.1 2.
Step S211 removes remaining second photoresist layer 315.Please refer to Fig.1 3.
In one embodiment, after the step S211, the step S200 further includes step S212.
Step S212, from surfaces of the amorphous silicon island 314a away from first insulating layer 220 and from the non-crystalline silicon
The both ends of island 314a are doped, the part that is doped in the amorphous silicon island 314a formed the first ohmic contact layer 230 and
Second ohmic contact layer 240, the part not being doped in the amorphous silicon island 314a form channel layer 250.First Europe
Nurse contact layer 230 is used to reduce the contact resistance between the source electrode in the thin film transistor (TFT) and the channel layer 250；Described
Two ohmic contact layers 240 are used to reduce the contact resistance between drain electrode and the channel layer 250 in the thin film transistor (TFT).Please
Refering to Figure 14.
In one embodiment, after the step S212, the step S200 further includes step S213, step
S214, step S215, step S216 and step S217, each step are described in detail as follows.
Step S213, formation are covered in first ohmic contact layer 230, second ohmic contact layer 240, the ditch
Second metal layer 317 in channel layer 250 and first insulating layer 220.Please refer to Fig.1 5.
Step S214 forms the 3rd photoresist layer 318 covered in the second metal layer 317.Please refer to Fig.1 6.
Step S215 provides the 3rd mask plate 319, using the 3rd mask plate 319 to the 3rd photoresist layer 318 into
Row patterning.Please refer to Fig.1 7.
Step S216 patterns the second metal layer according to the 3rd photoresist layer 318 after patterning, to be formed
Source electrode 260, drain electrode 270 and data cable 50.Please refer to Fig.1 8.
Step S217 removes remaining 3rd photoresist layer 318.Please refer to Fig.1 9.
In one embodiment, between the step S217 and the step S300, the preparation side of the display panel
Method further includes step I, step II, step III and step IV.
Step I forms second in the one side of the source electrode 260, drain electrode 270 and the data cable 50 away from the substrate 10
Insulating layer 280.Refer to Figure 20.
Step II forms the 4th photoresist layer 320 being covered in the second insulating layer 280.Refer to Figure 21.
Step III provides the 4th mask plate 321, using the 4th mask plate 321 to the 4th photoresist layer 320 into
Row patterning, to form perforation 281 in the second insulating layer 280, the perforation 281 is used to appear part drain electrode 270.Please
Refering to Figure 22.
Step IV removes remaining 4th photoresist layer 320.Refer to Figure 23.
In one embodiment, after the step IV, the preparation method of the display panel further includes step V, step
Rapid VI and step VII.
Step V forms the transparency conducting layer 322 covered in the second insulating layer 280.Refer to Figure 24.
Step VI forms the 5th photoresist layer 323 being covered on the transparency conducting layer 322.Refer to Figure 25.
Step VII provides the 5th mask plate 324, using the 5th mask plate 324 to the 5th photoresist layer 323 into
Row patterning, to form the pixel electrode 60 being electrically connected by the perforation 281 with the drain electrode 270.Refer to Figure 26.
Step VIII removes the 5th photoresist layer 323.Refer to Figure 27.
In one embodiment, between the step S200 and the step S300, the preparation side of the display panel
Method further includes step a.
Step a forms the color film layer 70 that the corresponding thin film transistor (TFT) is set.Refer to Figure 28.
Step S300, in one side of the tft layer 20 away from the substrate 10 and the corresponding viewing area 10a
And the binding area 10b forms organic planarization layer 80.Refer to Figure 29.
Step S400 provides exposure machine 90, and the exposure machine 90 includes mounting table mounting table 91, baffle 92 and light source 93,
The mounting table mounting table 91 is formed with the substrate 10 of the organic planarization layer 80 for placing.Refer to Figure 30.
Step S500 is mask with the baffle 92, opens the light source 93, by the organic flat of the binding area 10b
Smooth layer 80 removes.Refer to Figure 31.
Compared to the prior art, the preparation method of display panel of the invention is mask with the baffle 92 on exposure machine 90,
The organic planarization layer 80 of binding area 10b is eliminated, so as to reduce the quantity of mask plate, and then save the display surface prepared
The cost of plate.
When the organic planarization layer 80 is positivity photoresist, the step S500 " is mask with the baffle 92, opens institute
Light source 93 is stated, the organic planarization layer 80 of the binding area 10b is removed " it includes but are not limited to include step S510-I, it walks
Rapid S520-I, step S530-I, step S540-I and step S550-I.
The baffle 92 is arranged on the viewing area 10a and the position of the binding area 10b boundaries by step S510-I.
Step S520-I opens the light source 93.
Step S530-I, the mobile light source 93, so that the light that the light source 93 is sent irradiates the binding area 10b
Organic planarization layer 80.
When the light is irradiated to baffle 92, the light source 93 is closed by step S540-I.
Step S550-I develops the organic planarization layer 80, to remove the organic planarization layer of the binding area 10b
80。
The organic planarization layer 80 is negativity photoresist.The step S500 " is mask with the baffle 92, opens the light
Source 93 removes the organic planarization layer 80 of the binding area 10b " it includes but are not limited to include step S510-II, step
S520-II, step S530-II, step S540-II and step S550-II.：
The baffle 92 is arranged on the position of the binding area 10b and viewing area 10a boundaries by step S510-II.
Step S520-II opens the light source 93.
Step S530-II, the mobile light source 93, so that the light that the light source 93 is sent irradiates the viewing area
The organic planarization layer 80 of 10a.
When the light is irradiated to baffle 92, the light source 93 is closed by step S540-II.
Step S550-II develops the organic planarization layer 80, to remove the organic planarization of the binding area 10b
Layer 80.
The above disclosed power for being only a kind of preferred embodiment of the present invention, the present invention cannot being limited with this certainly
Sharp scope one of ordinary skill in the art will appreciate that realizing all or part of flow of above-described embodiment, and is weighed according to the present invention
Profit requires made equivalent variations, still falls within and invents covered scope.
Claims (10)
1. a kind of preparation method of display panel, which is characterized in that the preparation method of the display panel includes：
Substrate is provided, the substrate includes viewing area and is arranged on the binding area of the non-display area；
Tft layer is formed in the viewing area of the substrate, the tft layer includes thin film transistor (TFT)；
It is formed in one side of the tft layer away from the substrate and the corresponding viewing area and the binding area
Machine flatness layer；
There is provided exposure machine, the exposure machine includes mounting table, baffle and light source, and the mounting table described has for placing to be formed with
The substrate of machine flatness layer；
Using the baffle as mask, the light source is opened, the organic planarization layer in the binding area is removed.
2. the preparation method of display panel as described in claim 1, which is characterized in that the organic planarization layer is positivity light
Resistance, step " using the baffle as mask, opening the light source, the organic planarization layer in the binding area is removed " bag
It includes：
The position that the baffle plate setting is had a common boundary in the viewing area with the binding area；
Open the light source；
The mobile light source, so that the organic planarization layer in the light irradiation binding area that the light source is sent；
When the light is irradiated to the baffle, the light source is closed；
The organic planarization layer is developed, to remove the organic planarization layer in the binding area.
3. the preparation method of display panel as described in claim 1, which is characterized in that the organic planarization layer is negativity light
Resistance, step " using the baffle as mask, opening the light source, the organic planarization layer in the binding area is removed " bag
It includes：
The position that the baffle plate setting is had a common boundary in the binding area with the viewing area；
Open the light source；
The mobile light source, so that the light that the light source is sent irradiates the organic planarization layer of the viewing area；
When the light is irradiated to the baffle, the light source is closed；
The organic planarization layer is developed, to remove the organic planarization layer in the binding area.
4. the preparation method of display panel as described in claim 1, which is characterized in that the step is " in the aobvious of the substrate
Show that area forms tft layer, the tft layer includes thin film transistor (TFT) " include：
The viewing area is corresponded in the one side of the substrate and forms the first metal layer；
Form the first photoresist layer for covering the first metal layer；
First mask plate is provided, first photoresist layer is patterned using first mask plate；
The first metal layer is patterned according to the first photoresist layer after patterning, with formed spaced grid and
Public electrode；
Remove remaining first photoresist layer.
5. the preparation method of display panel as claimed in claim 4, which is characterized in that " remove remaining the in the step
After one photoresist layer ", the step " forms tft layer, the tft layer bag in the viewing area of the substrate
Include thin film transistor (TFT) " it further includes：
Form the first insulating layer for covering the grid and the public electrode；
Form the amorphous silicon layer being arranged on first insulating layer；
Form the second photoresist layer for covering the amorphous silicon layer；
Second mask plate is provided, second photoresist layer is patterned using second mask plate；
The amorphous silicon layer is patterned according to the second photoresist layer after patterning, to form the corresponding grid setting
Amorphous silicon island；
Remove remaining second photoresist layer.
6. the preparation method of display panel as claimed in claim 5, which is characterized in that " remove remaining the in the step
After two photoresist layers ", the step " forms tft layer, the tft layer bag in the viewing area of the substrate
Include thin film transistor (TFT) " it further includes：
It is doped from surface of the amorphous silicon island away from first insulating layer and from the both ends of the amorphous silicon island, it is described
The part that is doped in amorphous silicon island forms the first ohmic contact layer and the second ohmic contact layer, in the amorphous silicon island not into
The part of row doping forms channel layer.
7. the preparation method of display panel as claimed in claim 6, which is characterized in that the step is " from the amorphous silicon island
Away from first insulating layer surface and be doped from the both ends of the amorphous silicon island, be doped in the amorphous silicon island
Part form the first ohmic contact layer and the second ohmic contact layer, the part not being doped in the amorphous silicon island forms ditch
After channel layer ", the step " forms tft layer in the viewing area of the substrate, the tft layer includes thin
Film transistor " further includes：
Formation is covered in first ohmic contact layer, second ohmic contact layer, the channel layer and first insulation
Second metal layer on layer；
Form the 3rd photoresist layer covered in the second metal layer；
3rd mask plate is provided, the 3rd photoresist layer is patterned using the 3rd mask plate；
The second metal layer is patterned according to the 3rd photoresist layer after patterning, to form source electrode, drain electrode and data
Line；
Remove remaining 3rd photoresist layer.
8. the preparation method of display panel as claimed in claim 7, which is characterized in that " second metal layer is shelled in the step
From remaining 3rd photoresist layer " after, in the step " in one side of the tft layer away from the substrate and correspondence
The viewing area and the binding area form organic planarization layer " before, the preparation method of the display panel further includes：
Second insulating layer is formed in the one side of the source electrode, drain electrode and the data cable away from the substrate；
Form the 4th photoresist layer being covered in the second insulating layer；
4th mask plate is provided, the 4th photoresist layer is patterned using the 4th mask plate, with described second
Perforation is formed on insulating layer, the perforation drains for appearing part；
Remove remaining 4th photoresist layer.
9. the preparation method of display panel as claimed in claim 8, which is characterized in that " remove remaining the in the step
After four photoresist layers ", the preparation method of the display panel further includes：
Form the transparency conducting layer covered in the second insulating layer；
Form the 5th photoresist layer being covered on the transparency conducting layer；
5th mask plate is provided, the 5th photoresist layer is patterned using the 5th mask plate, passes through institute to be formed
State perforation and the pixel electrode for draining and being electrically connected；
Remove remaining 5th photoresist layer.
10. the preparation method of display panel as described in claim 1, which is characterized in that in the step " in the substrate
Viewing area forms tft layer, and the tft layer includes thin film transistor (TFT) " and the step it is " brilliant in the film
One side of the body tube layer away from the substrate and the corresponding viewing area and the binding area form organic planarization layer " between, institute
The preparation method for stating display panel further includes：
Form the color film layer that the corresponding thin film transistor (TFT) is set.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711320080.9A CN108054141B (en) | 2017-12-12 | 2017-12-12 | Preparation method of display panel |
| PCT/CN2018/074547 WO2019114112A1 (en) | 2017-12-12 | 2018-01-30 | Method for preparing display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711320080.9A CN108054141B (en) | 2017-12-12 | 2017-12-12 | Preparation method of display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108054141A true CN108054141A (en) | 2018-05-18 |
| CN108054141B CN108054141B (en) | 2020-11-06 |
Family
ID=62124374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711320080.9A Active CN108054141B (en) | 2017-12-12 | 2017-12-12 | Preparation method of display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108054141B (en) |
| WO (1) | WO2019114112A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101676781A (en) * | 2008-09-18 | 2010-03-24 | 统宝光电股份有限公司 | System for displaying images and fabricating method thereof |
| CN102608861A (en) * | 2011-01-19 | 2012-07-25 | 上海华虹Nec电子有限公司 | Method for improving morphology of photoresist on periphery of silicon wafer |
| CN103969944A (en) * | 2014-05-21 | 2014-08-06 | 深圳市华星光电技术有限公司 | Ultraviolet mask and manufacturing method thereof |
| CN104600081A (en) * | 2014-12-31 | 2015-05-06 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display panel and display device |
| CN205450560U (en) * | 2016-03-25 | 2016-08-10 | 中国科学院上海微系统与信息技术研究所 | Be suitable for regional exposure device of branch of contact litho machine |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050112027A (en) * | 2004-05-24 | 2005-11-29 | 삼성전자주식회사 | Method of fabricating ink jet head having glue layer |
| CN100505186C (en) * | 2006-08-24 | 2009-06-24 | 财团法人工业技术研究院 | Process for preparing vertical thin-film transistor |
| CN101520599A (en) * | 2008-02-26 | 2009-09-02 | 上海天马微电子有限公司 | Mask, method of designing the same, and method of manufacturing array substrate using the same |
| CN103553362B (en) * | 2013-10-15 | 2015-07-29 | 深圳市华星光电技术有限公司 | The making method of solidification frame glue light shield |
-
2017
- 2017-12-12 CN CN201711320080.9A patent/CN108054141B/en active Active
-
2018
- 2018-01-30 WO PCT/CN2018/074547 patent/WO2019114112A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101676781A (en) * | 2008-09-18 | 2010-03-24 | 统宝光电股份有限公司 | System for displaying images and fabricating method thereof |
| CN102608861A (en) * | 2011-01-19 | 2012-07-25 | 上海华虹Nec电子有限公司 | Method for improving morphology of photoresist on periphery of silicon wafer |
| CN103969944A (en) * | 2014-05-21 | 2014-08-06 | 深圳市华星光电技术有限公司 | Ultraviolet mask and manufacturing method thereof |
| CN104600081A (en) * | 2014-12-31 | 2015-05-06 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display panel and display device |
| CN205450560U (en) * | 2016-03-25 | 2016-08-10 | 中国科学院上海微系统与信息技术研究所 | Be suitable for regional exposure device of branch of contact litho machine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108054141B (en) | 2020-11-06 |
| WO2019114112A1 (en) | 2019-06-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI553837B (en) | Method for fabricating display panel | |
| WO2017166341A1 (en) | Method for manufacturing tft substrate and manufactured tft substrate | |
| TWI238277B (en) | Liquid crystal display device | |
| CN101114657B (en) | Display panel, mask and method of manufacturing the same | |
| WO2017008370A1 (en) | Manufacturing method of manufacturing array and color filter integrated-type liquid crystal display and structure of array and color filter integrated-type liquid crystal display | |
| US10529751B2 (en) | Exposure mask and method of manufacturing a substrate using the exposure mask | |
| CN105895581A (en) | TFT substrate manufacturing method | |
| US8962404B2 (en) | Method for manufacturing fan-out lines on array substrate | |
| CN107204309B (en) | The production method and its structure of dual gate metal oxide semiconductor TFT substrate | |
| CN208111444U (en) | Thin-film transistor array base-plate and display device | |
| CN105470197A (en) | Production method of low temperature poly silicon array substrate | |
| CN103151359A (en) | Display device, array substrate and manufacturing method thereof | |
| CN203133439U (en) | Liquid crystal display | |
| CN105514033A (en) | Manufacturing method for array substrate | |
| TW200814323A (en) | Liquid crystal display structure and method for manufacturing the same | |
| CN105679714A (en) | Array substrate and manufacturing method therefor | |
| CN106298646A (en) | The manufacture method of TFT substrate | |
| TW200910603A (en) | Method for manufacturing a pixel structure of a liquid crystal display | |
| TWI272424B (en) | Liquid crystal display and fabricating the same | |
| CN104570525A (en) | Liquid crystal display device and method of manufacturing the same | |
| WO2014180052A1 (en) | Color filter substrate, indium tin oxide film with patterned configure thereof, manufacturing method thereof and liquid crystal display | |
| WO2014012269A1 (en) | Manufacturing method for array substrate with embedded photovoltaic cell | |
| EP3690927A1 (en) | Manufacturing method of tft array substrate and structure of tft array substrate | |
| CN105679772A (en) | Manufacturing method of low-temperature polycrystalline silicon TFT substrate and low-temperature polycrystalline silicon TFT substrate | |
| CN108598086A (en) | The production method and tft array substrate of tft array substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |