WO2019114112A1

WO2019114112A1 - Method for preparing display panel

Info

Publication number: WO2019114112A1
Application number: PCT/CN2018/074547
Authority: WO
Inventors: 徐向阳
Original assignee: 深圳市华星光电技术有限公司
Priority date: 2017-12-12
Filing date: 2018-01-30
Publication date: 2019-06-20
Also published as: CN108054141A; CN108054141B

Abstract

A method for preparing a display panel, comprising: providing a substrate (10), wherein the substrate (10) comprises a display area (10a) and a binding area (10b) arranged at the periphery of the display area (10a); forming a thin-film transistor layer (20) in the display area (10a) of the substrate (10), wherein the thin-film transistor layer (20) comprises a thin-film transistor; forming an organic flat layer (80) at a side of the thin-film transistor layer (20) away from the substrate (10) and corresponding to the display area (10a) and the binding area (10b); providing an exposure machine (90), wherein the exposure machine (90) comprises a placement platform (91), a barrier plate (92) and a light source (93), and the placement platform (91) is used for placing the substrate (10) formed with the organic flat layer (80); and using the barrier plate (92) as a mask to enable the light source (93), so as to remove the organic flat layer (80) from the binding area (10b). The method for preparing a display panel facilitates reducing the costs of a prepared display panel.

Description

Display panel preparation method

The present invention claims priority to the filing date of the application Serial No.

Technical field

The present invention relates to the field of flat display, and in particular to a method for preparing a display panel.

Background technique

Liquid crystal display (LCD), as a common display device, is favored by users because of its low power consumption, small size, and light weight. The liquid crystal display device includes a backlight module and a display panel. The backlight module is configured to provide a light source for the display panel, and the display panel functions as a light valve to control the brightness of the backlight corresponding to each pixel to realize the screen display. The liquid crystal display panel comprises an array of color filter substrates, and a film layer of a thin film transistor, a data line, a pixel electrode, a common electrode, a flat layer or the like is usually disposed on the array color film substrate, thereby causing a mask for the preparation process of the array color film substrate. The board, which causes the preparation cost of the array substrate to be high, thereby improving the preparation cost of the liquid crystal display panel.

Summary of the invention

The invention provides a method for preparing a display panel, and the method for preparing the display panel comprises:

Providing a substrate, the substrate comprising a display area and a binding area disposed at a periphery of the display area;

Forming a thin film transistor layer in a display region of the substrate, the thin film transistor layer comprising a thin film transistor;

Forming an organic flat layer on a side of the thin film transistor layer away from the substrate and corresponding to the display region and the binding region;

Providing an exposure machine, the exposure machine comprising a placement table, a baffle and a light source, the placement table for placing a substrate on which the organic flat layer is formed;

Using the baffle as a mask, the light source is turned on to remove the organic flat layer of the binding zone.

Compared with the prior art, the method for preparing the display panel of the present invention uses the baffle on the exposure machine as a mask to remove the organic flat layer of the binding region, thereby reducing the number of the mask, thereby saving the preparation. The cost of the display panel.

DRAWINGS

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and other drawings can be obtained from those skilled in the art without any creative work.

1 is a flow chart of a method of fabricating a display panel in accordance with a preferred embodiment of the present invention.

2 to 31 are schematic diagrams showing the structure of a display panel corresponding to each step in the method for fabricating a display panel of the present invention.

Detailed ways

The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, but not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.

Please refer to FIG. 1. FIG. 1 is a flow chart of a method for fabricating a display panel according to a preferred embodiment of the present invention. The method for preparing the display panel includes, but is not limited to, including step S100, step S200, step S300, step S400, and step S500.

In step S100, a substrate 10 is provided. The substrate 10 includes a display area 10a and a binding area 10b disposed at a periphery of the display area 10a. Referring to FIG. 2 , the substrate 10 may be, but not limited to, a transparent substrate such as a glass substrate or a plastic substrate. When the substrate 10 is applied to the display panel, the display area 10a is used to display a video or a picture or the like. The binding area 10b is used to set a connection between the data line and the chip, and a connection between the scan line and the chip. The binding zone 10b is typically part or all of the non-display area. The binding area 10b may be disposed on one side or sides of the display area 10a, or may be a week around the display area 10a.

In step S200, a thin film transistor layer 20 is formed on the display region 10a of the substrate 10, and the thin film transistor layer 20 includes a thin film transistor.

In an embodiment, the step S200 includes, but is not limited to, step S201, step S202, step S203, step S204, and step S205. The individual steps are described in detail below.

In step S201, a first metal layer 311 is formed on one side of the substrate 10 corresponding to the display area 10a. Preferably, a first metal layer 311 is formed on one side of the substrate 10 corresponding to the display region 10a, and a first metal layer 311 is formed on one side of the substrate corresponding to the binding region 10b. Please refer to Figure 3.

Step S202, forming a first photoresist layer 312 covering the first metal layer 311. Please refer to Figure 4.

In step S203, a first mask 313 is provided, and the first photoresist layer 312 is patterned by the first mask 313. Please refer to Figure 5.

In step S204, the first metal layer 311 is patterned according to the patterned first photoresist layer 312 to form the gate 210 and the common electrode 40 which are disposed at intervals. Please refer to Figure 6.

In step S205, the remaining first photoresist layer 312 is stripped. Please refer to Figure 7.

In an embodiment, after the step S205, the step S200 further includes step S206, step S207, step S208, step S209, step S210 and step S211, and the steps are described in detail below.

Step S206, forming a first insulating layer 220 covering the gate 210 and the common electrode 40. Please refer to Figure 8.

Step S207, forming an amorphous silicon layer 314 disposed on the first insulating layer 220. Please refer to Figure 9.

Step S208, forming a second photoresist layer 315 covering the amorphous silicon layer 314. Please refer to Figure 10.

In step S209, a second mask 316 is provided, and the second photoresist layer 315 is patterned by the second mask 316. Please refer to Figure 11.

Step S210, patterning the amorphous silicon layer 314 according to the patterned second photoresist layer 315 to form an amorphous silicon island 314a corresponding to the gate 210. Please refer to Figure 12.

In step S211, the remaining second photoresist layer 315 is stripped. Please refer to Figure 13.

In an embodiment, after the step S211, the step S200 further includes step S212.

Step S212, the amorphous silicon island 314a is away from the surface of the first insulating layer 220 and doped from both ends of the amorphous silicon island 314a, and the doped portion of the amorphous silicon island 314a is doped. A first ohmic contact layer 230 and a second ohmic contact layer 240 are formed, and a portion of the amorphous silicon island 314a that is not doped forms a channel layer 250. The first ohmic contact layer 230 is for reducing contact resistance between a source of the thin film transistor and the channel layer 250; the second ohmic contact layer 240 is for reducing the thin film transistor Contact resistance between the drain and the channel layer 250. Please refer to Figure 14.

In an embodiment, after the step S212, the step S200 further includes step S213, step S214, step S215, step S216 and step S217, and the steps are described in detail below.

Step S213, forming a second metal layer 317 covering the first ohmic contact layer 230, the second ohmic contact layer 240, the channel layer 250, and the first insulating layer 220. Please refer to Figure 15.

Step S214, forming a third photoresist layer 318 covering the second metal layer 317. Please refer to Figure 16.

In step S215, a third mask 319 is provided, and the third photoresist layer 318 is patterned by the third mask 319. Please refer to Figure 17.

Step S216, patterning the second metal layer according to the patterned third photoresist layer 318 to form a source 260, a drain 270, and a data line 50. Please refer to Figure 18.

In step S217, the remaining third photoresist layer 318 is stripped. Please refer to Figure 19.

In an embodiment, the method for preparing the display panel further includes Step I, Step II, Step III and Step IV between the step S217 and the step S300.

In step I, a second insulating layer 280 is formed on a side of the source 260, the drain 270, and the data line 50 away from the substrate 10. Please refer to Figure 20.

Step II, forming a fourth photoresist layer 320 overlying the second insulating layer 280. Please refer to Figure 21.

In step III, a fourth mask 321 is provided, and the fourth photoresist layer 320 is patterned by using the fourth mask 321 to form a through hole 281 on the second insulating layer 280. The through hole 281 is used to expose a portion of the drain 270. Please refer to Figure 22.

In step IV, the remaining fourth photoresist layer 320 is stripped. Please refer to Figure 23.

In an embodiment, after the step IV, the method for preparing the display panel further includes step V, step VI and step VII.

In step V, a transparent conductive layer 322 covering the second insulating layer 280 is formed. Please refer to Figure 24.

Step VI, forming a fifth photoresist layer 323 overlying the transparent conductive layer 322. Please refer to Figure 25.

Step VII, a fifth mask 324 is provided, and the fifth photoresist layer 323 is patterned by the fifth mask 324 to form an electrical connection with the drain 270 through the through hole 281. Pixel electrode 60. Please refer to Figure 26.

In step VIII, the fifth photoresist layer 323 is stripped. Please refer to Figure 27.

In an embodiment, the method for preparing the display panel further includes the step a between the step S200 and the step S300.

In step a, a color film layer 70 corresponding to the thin film transistor is formed. Please refer to Figure 28.

Step S300, forming an organic flat layer 80 on a side of the thin film transistor layer 20 away from the substrate 10 and corresponding to the display area 10a and the binding region 10b. Please refer to Figure 29.

In step S400, an exposure machine 90 is provided, which includes a placement stage placement table 91, a shutter 92, and a light source 93 for placing the substrate 10 on which the organic flat layer 80 is formed. Please refer to Figure 30.

In step S500, the light source 93 is turned on by using the baffle 92 as a mask to remove the organic flat layer 80 of the binding region 10b. Please refer to Figure 31.

Compared with the prior art, the method for preparing the display panel of the present invention uses the baffle 92 on the exposure machine 90 as a mask to remove the organic flat layer 80 of the bonding region 10b, thereby reducing the number of masks. This further saves the cost of the prepared display panel.

When the organic flat layer 80 is a positive photoresist, the step S500 "opens the light source 93 with the baffle 92 as a mask to remove the organic flat layer 80 of the binding region 10b" Including but not limited to, including step S510-I, step S520-I, step S530-I, step S540-I, and step S550-I.

In step S510-I, the baffle 92 is disposed at a position where the display area 10a and the binding area 10b meet.

In step S520-I, the light source 93 is turned on.

Step S530-I, the light source 93 is moved such that the light emitted by the light source 93 illuminates the organic flat layer 80 of the binding region 10b.

Step S540-I, when the light is irradiated to the shutter 92, the light source 93 is turned off.

In step S550-I, the organic flat layer 80 is developed to remove the organic flat layer 80 of the binding region 10b.

The organic flat layer 80 is a negative photoresist. The step S500 "opening the light source 93 with the baffle 92 as a mask to remove the organic flat layer 80 of the binding region 10b" includes but is not limited to including the step S510-II, step S520-II , step S530-II, step S540-II and step S550-II. :

In step S510-II, the baffle 92 is disposed at a position where the binding area 10b meets the display area 10a.

In step S520-II, the light source 93 is turned on.

In step S530-II, the light source 93 is moved such that the light emitted by the light source 93 illuminates the organic flat layer 80 of the display area 10a.

In step S540-II, when the light is irradiated to the shutter 92, the light source 93 is turned off.

In step S550-II, the organic flat layer 80 is developed to remove the organic flat layer 80 of the binding region 10b.

The above disclosure is only a preferred embodiment of the present invention, and of course, the scope of the present invention is not limited thereto, and those skilled in the art can understand all or part of the process of implementing the above embodiments, and according to the present invention. The equivalent changes required are still within the scope of the invention.

Claims

A method for preparing a display panel, wherein the method for preparing the display panel comprises:

Providing a substrate, the substrate comprising a display area and a binding area disposed at a periphery of the display area;

Forming a thin film transistor layer in a display region of the substrate, the thin film transistor layer comprising a thin film transistor;

Forming an organic flat layer on a side of the thin film transistor layer away from the substrate and corresponding to the display region and the binding region;

Providing an exposure machine, the exposure machine comprising a placement table, a baffle and a light source, the placement table for placing a substrate on which the organic flat layer is formed;

Using the baffle as a mask, the light source is turned on to remove the organic flat layer of the binding zone.
The method of manufacturing a display panel according to claim 1, wherein the organic flat layer is a positive photoresist, and the step of "using the baffle as a mask to turn on the light source to bind the The removal of the organic flat layer of the zone" includes:

Positioning the baffle at a position where the display area meets the binding area;

Turning on the light source;

Moving the light source such that light emitted by the light source illuminates the organic flat layer of the binding zone;

Turning off the light source when the light illuminates the baffle;

The organic flat layer is developed to remove the organic flat layer of the binding zone.
The method of manufacturing a display panel according to claim 1, wherein the organic flat layer is a negative photoresist, and the step of "turning on the light source with the baffle as a mask to bind the The removal of the organic flat layer of the zone" includes:

Positioning the baffle at a position where the binding area meets the display area;

Turning on the light source;

Moving the light source such that light emitted by the light source illuminates the organic flat layer of the display area;

Turning off the light source when the light illuminates the baffle;

The organic flat layer is developed to remove the organic flat layer of the binding zone.
The method of manufacturing a display panel according to claim 1, wherein the step of "forming a thin film transistor layer in a display region of the substrate, the thin film transistor layer including a thin film transistor" comprises:

Forming a first metal layer corresponding to the display area on one side of the substrate;

Forming a first photoresist layer covering the first metal layer;

Providing a first mask, and patterning the first photoresist layer by using the first mask;

Patterning the first metal layer according to the patterned first photoresist layer to form spaced gates and common electrodes;

The remaining first photoresist layer is stripped.
The method of manufacturing a display panel according to claim 4, wherein after the step of "stripping the remaining first photoresist layer", the step "forming a thin film transistor layer in the display region of the substrate, the film The transistor layer includes a thin film transistor" further includes:

Forming a first insulating layer covering the gate and the common electrode;

Forming an amorphous silicon layer disposed on the first insulating layer;

Forming a second photoresist layer covering the amorphous silicon layer;

Providing a second mask, and patterning the second photoresist layer by using the second mask;

Patterning the amorphous silicon layer according to the patterned second photoresist layer to form an amorphous silicon island corresponding to the gate;

The remaining second photoresist layer is stripped.
The method of manufacturing a display panel according to claim 5, wherein after the step of "stripping the remaining second photoresist layer", the step "forming a thin film transistor layer in the display region of the substrate, the film The transistor layer includes a thin film transistor" further includes:

The amorphous silicon island is doped away from the surface of the first insulating layer and is doped from both ends of the amorphous silicon island, and the doped portion of the amorphous silicon island forms a first ohmic contact layer and A second ohmic contact layer in which the undoped portion of the amorphous silicon island forms a channel layer.
The method of manufacturing a display panel according to claim 6, wherein the step "from the surface of the amorphous silicon island away from the surface of the first insulating layer and doping from both ends of the amorphous silicon island, a portion of the amorphous silicon island doped to form a first ohmic contact layer and a second ohmic contact layer, and a portion of the amorphous silicon island where the doping is not formed forms a channel layer", the step "being The display region of the substrate forms a thin film transistor layer, and the thin film transistor layer includes a thin film transistor" further includes:

Forming a second metal layer overlying the first ohmic contact layer, the second ohmic contact layer, the channel layer, and the first insulating layer;

Forming a third photoresist layer covering the second metal layer;

Providing a third mask, and patterning the third photoresist layer by using the third mask;

Patterning the second metal layer according to the patterned third photoresist layer to form a source, a drain, and a data line;

The remaining third photoresist layer is stripped.
The method of manufacturing a display panel according to claim 7, wherein in the step "the second metal layer peels off the remaining third photoresist layer", in the step "the thin film transistor layer is away from the substrate Before the display panel and the binding region form an organic flat layer, the method for preparing the display panel further includes:

Forming a second insulating layer on a side of the source, the drain, and the data line away from the substrate;

Forming a fourth photoresist layer overlying the second insulating layer;

Providing a fourth mask, wherein the fourth photoresist layer is patterned by using the fourth mask to form a through hole on the second insulating layer, wherein the through hole is used to expose a portion of the drain ;

The remaining fourth photoresist layer is stripped.
The method of manufacturing the display panel according to claim 8, wherein after the step of "stripping the remaining fourth photoresist layer", the method for preparing the display panel further comprises:

Forming a transparent conductive layer covering the second insulating layer;

Forming a fifth photoresist layer overlying the transparent conductive layer;

Providing a fifth mask, wherein the fifth photoresist layer is patterned by using the fifth mask to form a pixel electrode electrically connected to the drain through the through hole;

The remaining fifth photoresist layer is stripped.
The method of manufacturing a display panel according to claim 1, wherein in said step "forming a thin film transistor layer in a display region of said substrate, said thin film transistor layer comprises a thin film transistor" and said step "in said film The manufacturing method of the display panel further includes: a method for preparing the display panel between the display layer and the binding region to form an organic flat layer.

A color film layer corresponding to the thin film transistor is formed.