CN101676781B - System for displaying images and fabricating method thereof - Google Patents
System for displaying images and fabricating method thereof Download PDFInfo
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- CN101676781B CN101676781B CN 200810172104 CN200810172104A CN101676781B CN 101676781 B CN101676781 B CN 101676781B CN 200810172104 CN200810172104 CN 200810172104 CN 200810172104 A CN200810172104 A CN 200810172104A CN 101676781 B CN101676781 B CN 101676781B
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Abstract
A system for displaying images and fabricating method thereof are provided. The system includes a thin film transistor substrate including a substrate having a display area and a pad area. The thin film transistor substrate further includes a conductive line disposed on the substrate in the display area. The conductive line includes a lower metal line, an upper metal line and a middle metal line therebetween. The width of the middle metal line is narrower than that of the upper metal line.
Description
Technical field
The present invention relates to a kind of image display system, particularly relate to a kind of thin film transistor base plate in structure and the manufacture method thereof of wire and the joint sheet of viewing area and pad area.
Background technology
Liquid crystal flat panel display has been widely applied on the display element of product of all kinds in recent years.In order to improve the display quality of liquid crystal flat panel display, then to improve the aperture opening ratio of display panels, and avoid the generation of light leak (light leakage) problem.
Yet, in known technique, be arranged at the sweep trace (scan line) of thin film transistor base plate or the shape of data line (data line) and be generally taper (taper), when the backlight arrangement (back light module) of the image display system that comprises display panels shines known thin film transistor base plate, can be because the taper wire contain high-reflectivity metal, and cause reflective and then cause the serious light leak problem of display panels.
In order to solve the light leak problem of display panels, known technology can additionally arrange one deck in the below of sweep trace (scan line) or data line (data line) and cover metal level, causes reflective to stop irradiation to the above-mentioned wire that backlight arrangement produces.Yet the aperture opening ratio (aperture ratio) that metal level can make the LCD slab integral that covers of above-mentioned extra setting descends, and causes display panels brightness to reduce, and causes the problems such as display quality is not good.In addition, known technology also can arrange one deck silicon nitride (SiN on sweep trace (scan line) or data line (dataline)
X), to solve the light leak problem of display panels.But, form above-mentioned silicon nitride (SiN
X) the required problem that can cause process costs to rise such as the extra technique such as chemical vapor deposition (CVD), chemical etching of layer.
Therefore, need a kind of display panels that overcomes the light leak problem, to reach preferred display quality.
Summary of the invention
Embodiments of the invention provide a kind of manufacture method of image display system, and comprising provides substrate, and it comprises viewing area and pad area; Sequentially form lower metal layer, intermediate metal layer, upper metal level on this substrate; Upward metal level, this intermediate metal layer and this lower metal layer are to form wire in this viewing area for anisotropic etching, and this wire has lower metal wire, intermetallic metal line and upper metal wire; And this intermetallic metal line of isotropic etching, make the width of this intermetallic metal line be narrower than the width of metal wire on this and the width of this time metal wire.
Another embodiment of the present invention provides a kind of image display system, comprises thin film transistor base plate, comprising: this thin film transistor base plate comprises substrate, comprises viewing area and pad area; Wire is arranged at above this thin film transistor substrate of this viewing area, and this wire has lower metal wire, intermetallic metal line and lower metal wire, and wherein the width of this intermetallic metal line is narrower than the width of metal wire on this and the width of this time metal wire.
Description of drawings
Fig. 1 is the synoptic diagram of the display panels of the embodiment of the invention.
Fig. 2 is the viewing area that is formed at thin film transistor base plate of the embodiment of the invention and wire and the joint sheet of pad area.
Fig. 3 a～Fig. 3 d is the wire of the embodiment of the invention and the process section of joint sheet.
Fig. 4 a～Fig. 4 e is the wire of another embodiment of the present invention and the process section of joint sheet.
Fig. 4 d '～Fig. 4 e ' is the present invention again wire of another embodiment and the process section of joint sheet.
Fig. 5 is the configuration schematic diagram of the image display system that comprises display panels of the embodiment of the invention.
Description of reference numerals
100～substrate; 102～lower metal layer;
104～intermediate metal layer; 106～upper metal level;
102a～lower metal wire; 104a～intermetallic metal line;
106a～upper metal wire; 102b～lower metal gasket;
104b～intermetallic metal pad; 106b～upper metal gasket;
108,110～photoresist pattern; 220～conductive protecting layer;
30～light; 224,226～photomask;
10～shading region; 20～photic zone;
40～semi-opaque region; 222～light sensation flatness layer;
222a～photoactive material; 250～opening;
202～thin film transistor base plate; 204～colored filter substrate;
206～signal is processed band; 208～circuit board;
212～viewing area; 214～pad area;
216～wire; 218～joint sheet;
500～display panels; 600～liquid crystal display;
700～input block;
800～comprise the image display system of display panels.
Embodiment
See also Fig. 1 and Fig. 2, Fig. 1 is the synoptic diagram of the display panels 500 of the embodiment of the invention.In embodiments of the present invention, display panels 500 can be low temperature polycrystalline silicon (low temperaturepoly-silicon) display panels.Display panels 500 comprises thin film transistor base plate 202, colored filter substrate 204 and fills in liquid crystal material (figure shows) in the space between aforesaid substrate.Be provided with multi-strip scanning line (scan line) and data line (data line) at thin film transistor base plate 202, to define a plurality of pixel regions, in each pixel region, then comprise pixel electrode and as the thin film transistor (TFT) (TFT) of switch.
The thin film transistor base plate 202 that Fig. 2 shows the embodiment of the invention is in the viewing area 212 and the wire 216 of pad area 214 and as the joint sheet 218 of the internal terminal of thin film transistor base plate 202.As shown in Figure 2, thin film transistor base plate has viewing area 212 and pad area 214.Thin film transistor base plate comprises many wires 216, is covered in substrate top, and each wire 216 has extension, extends to pad area 214, with as joint sheet 218.Wire 216 for being used for defining sweep trace (scan line) or the data line (data line) of pixel element array, in embodiments of the present invention, for example is data line (dataline) for example.By modes such as the automatic splicing tpae of coil type or flexible printed circuit board, process with the joint sheet 218 of 206 electric connections pad area 214 shown in Figure 2 and outside circuit board 208 to see through signal.Moreover, can process at joint sheet 218 and signal and anisotropic conductive is set between being with 206, to strengthen attaching ability between the two.
Fig. 3 a～Fig. 3 d is the wire of embodiment of the invention image display system and the process section of joint sheet.At first, shown in Fig. 3 a, the substrate 100 that provides transparent materials such as glass or quartz to consist of, it comprises viewing area 212 and pad area 214, above-mentioned viewing area 212 is for forming the zone of thin film transistor (TFT) array.
Then, form metal level at substrate 100, then this metal level of patterning is to form grid, sweep trace; Form again gate insulator, as the element (figure shows) of the thin film transistor (TFT)s such as polysilicon active layers of charge carrier passage.
Secondly, sequentially form lower metal layer 102, intermediate metal layer 104, upper metal level 106 on aforesaid substrate 100, metal level 102 and lower metal layer be such as being metal or its alloys such as titanium, tantalum, molybdenum, chromium on this, and intermediate metal layer 104 for example is aluminum metal or its alloy of high reflectance.Then, utilize photoetching process to form photoresist patterns 108 at upper metal level 106, with as etching mask.
Then, please refer to Fig. 3 b, utilize metal level 106, intermediate metal layer 104 and lower metal layer 102 on the dry ecthing mode anisotropic etching, with the 212 formation wires 216 in the viewing area, above-mentioned wire 216 has lower metal wire 102a, intermetallic metal line 104a and upper metal wire 106a.Simultaneously, also can form joint sheet 218 at pad area 214, above-mentioned joint sheet 218 comprises lower metal gasket 102b, intermetallic metal pad 104b and upper metal gasket 106b, moreover joint sheet 218 is taper (tapered), and the tool smooth side wall.At this moment, also define simultaneously the source/drain electrodes (figure does not show) of thin film transistor (TFT) array.Then, divest photoresist pattern 108.
Please refer to Fig. 3 c, again utilize the photoresist pattern 110 of photoetching process to form as etching mask at pad area 214, with protection joint sheet 218.
Then, please refer to Fig. 3 c and Fig. 3 d, utilize wet etching mode isotropic etching intermetallic metal line 104a, make the width of intermetallic metal line 104a be narrower than the width of metal wire 106a, the width of above-mentioned intermetallic metal line 104a preferably also is narrower than the width of lower metal wire 102a.Refer at this " width ", the bottom width of middle, lower metal wire.The etching solution that the wet etching mode adopts preferably for the etching speed of the intermetallic metal line 104a of for example aluminium much larger than the etching for upper metal wire 106a and lower metal wire 102a, so that intermetallic metal line 104a by sidewall etched and indent, but upper metal wire 106a and lower metal wire 102a are only by micro-etching or not etched.Also can select suitable reacting gas in other embodiments, make the etching selectivity of intermetallic metal line and lower (or on) metal wire greater than 10, carry out dry ecthing.Then, divest photoresist pattern 110.For the joint sheet 218 (particularly intermetallic metal pad) that prevents pad area 214 is subject to aqueous vapor and oxidation, can be when forming pixel electrode, upper surface and sidewall at joint sheet 218 form conductive protecting layer 220, and this conductive protecting layer can be indium tin oxide (indium tinoxide; ITO) or indium-zinc oxide (indium zinc oxide; The transparent conductive material such as IZO).After forming pixel electrode, can finish the making of thin film transistor base plate.
Fig. 3 d shows that present embodiment is formed at wire 216 and the joint sheet 218 of image display system, also is the sectional view along the I-I ' line of Fig. 2, and this system comprises the substrate 100 with viewing area 212 and pad area 214; Wire 216 is arranged at substrate 100 tops of viewing area 216, and this wire 216 has lower metal wire 102a, intermetallic metal line 104a and upper metal wire 106a, and the width of this intermetallic metal line 104a is narrower than the width of metal wire 106a and lower metal wire 102a.According to wire 216 structures shown in Fig. 3 d, because the width of intermetallic metal line 104a is narrower, therefore, when backlight passes through wire 216, upper metal wire 106a or lower metal wire 102a can cover the intermetallic metal line 104a of high reflectance, and avoid the display panels light leak problem that causes because of reflective, therefore, can improve the display quality of image display system.
Fig. 4 a～Fig. 4 e is the wire of another embodiment of the present invention and the process section of joint sheet.The processing step of Fig. 4 a and Fig. 4 b is identical with the processing step of Fig. 3 a and Fig. 3 b, is not repeated herein.
Please refer to Fig. 4 c, the step shown in Fig. 4 c and Fig. 3 c difference are, do not form the photoresist pattern that covers pad area 214.That is when utilizing wet etching mode isotropic etching intermetallic metal line 104a, also etching intermetallic metal pad 104b makes the width of intermetallic metal line 104a be narrower than the width of metal wire 106a and lower metal wire 102a.On the other hand, the width of the intermetallic metal pad 104b of joint sheet 218 is narrower than the width of metal gasket 106b and lower metal gasket 102b on this.
In the present embodiment, because the intermetallic metal pad 104b of joint sheet 218 is inner concavity, cause easily the conductive protecting layer 220 of follow-up formation to break (crack), therefore, break for fear of conductive protecting layer 220, can carry out the technique shown in Fig. 4 d～Fig. 4 e.
Shown in Fig. 4 d, comprehensive in the viewing area 212 and pad area 214 form light sensation flatness layers (photosensitive planarization) 222, the light sensation flatness layer 222 of present embodiment for example adopts the positive light anti-etching agent material, light 30 by for example ultraviolet light, see through the photomask 224 that comprises shading region 10 and photic zone 20, selectivity is in 222 exposures of 214 pairs of light sensation flatness layers of pad area, then utilize developer solution to carry out development step, be exposed and produce photochemically reactive part to remove light sensation flatness layer 222, and reach metal gasket 106b and stay photoactive material 222a between the metal gasket 102b down at the sidewall of intermetallic metal pad 104b, shown in Fig. 4 e.Because the width of upper metal gasket 106b is wider than the width of intermetallic metal pad 104b, therefore, the material that upper metal gasket 106b can shaded portions light sensation flatness layer avoids exposure, therefore, can stay above-mentioned photoactive material 222a.Then, form conductive protecting layer 220 at upper metal gasket 106b, this conductive protecting layer 220 also may be formed at the sidewall of joint sheet 218.
Break for fear of conductive protecting layer 220, after the technique shown in Fig. 4 c, also can carry out the technique shown in Fig. 4 d '～Fig. 4 e '.
Fig. 4 d ' is with the technique difference shown in Fig. 4 d, utilize photomask 226 to replace the photomask 224 shown in Fig. 4 d, photomask 226 is shadow tone (half-tone) photomask that comprises shading region 10, photic zone 20 and semi-opaque region 40, wherein shading region is aimed at viewing area 212, photic zone 20 is aimed at the central portion of upper metal gasket 106b, and semi-opaque region 40 then is that aligned abutment is in the zone of upper metal gasket 106b central portion.Light 30 by for example ultraviolet light, see through above-mentioned photomask 226, selectivity is in 222 exposures of 214 pairs of light sensation flatness layers of pad area, then utilize developer solution to carry out development step, be exposed and produce photochemically reactive part to remove light sensation flatness layer 222, substrate 100 and joint sheet 218 at pad area stay photoactive material 222a, and this photoactive material has opening 250, expose the upper metal gasket 106b of above-mentioned joint sheet 218.Then, form conductive protecting layer 220 at upper metal gasket 106b and photoactive material 222a.By forming photoactive material 222a at pad area 214, not only can avoid joint sheet 218 oxidations, and because conductive protecting layer 220 need not be formed on the joint sheet with local inner concave sidewall, therefore, can avoid conductive protecting layer 220 to break.
Then please refer to Fig. 5, it is the configuration schematic diagram of the image display system that comprises display panels 500 800 of the embodiment of the invention, wherein comprise liquid crystal display 600, this liquid crystal display has the described display panels 500 of the embodiment of the invention, and a pair of up and down this display panels 500 of Polarizer sandwiched, backlight arrangement is arranged under the lower Polarizer, and this liquid crystal display 600 can be the some of electronic installation.Generally speaking, image display system 800 comprises liquid crystal display 600 and input block 700, and input block 700 couples with liquid crystal display 600, and signal transmission makes liquid crystal display 600 show images to liquid crystal display 600.The liquid crystal display 600 of the embodiment of the invention can comprise for example display of twisted nematic formula liquid crystal (TN), STN Super TN formula liquid crystal (STN), many quadrants vertical direction distributing type liquid crystal (MVA), plane suitching type liquid crystal (IPS), edge electrical field switching type liquid crystal (FFS) or other liquid crystal kinds.Electronic installation can be mobile phone, digital camera, personal digital assistant (PDA), notebook computer, desktop computer, TV, vehicle display, GPS (GPS), aviation display, digital frame (Digital Photo Frame) or Portable DVD player.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention, any persons skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (8)
1. the manufacture method of an image display system comprises:
Substrate is provided, and it comprises viewing area and pad area;
Sequentially form lower metal layer, intermediate metal layer, upper metal level on this substrate;
Anisotropic etching is somebody's turn to do upper metal level, this intermediate metal layer and this lower metal layer to form wire in this viewing area, this wire has lower metal wire, intermetallic metal line and upper metal wire, and form joint sheet at this pad area simultaneously, this joint sheet comprises lower metal gasket, intermetallic metal pad and upper metal gasket;
This intermetallic metal line of isotropic etching, so that the width of this intermetallic metal line is narrower than the width of metal wire on this and the width of this time metal wire, and this intermetallic metal pad of etching simultaneously, so that the width of this intermetallic metal pad is narrower than the width of metal gasket and this time metal gasket on this;
In this viewing area and this pad area form the light sensation flatness layer;
See through by light comprise shading region and photic zone photomask to this light sensation flatness layer exposure, with the sidewall of this intermetallic metal pad and should on stay photoactive material between metal gasket and this time metal gasket; And
On this, form conductive protecting layer on the metal gasket.
2. image display system comprises:
Thin film transistor base plate comprises:
Substrate, it has viewing area and pad area;
Wire is arranged at above this substrate in this viewing area, and this wire has lower metal wire, intermetallic metal line and upper metal wire, and wherein the width of this intermetallic metal line is narrower than the width of metal wire on this and the width of this time metal wire;
Joint sheet is located at the pad area of this substrate, and this joint sheet comprises lower metal gasket, intermetallic metal pad and upper metal gasket, and wherein the width of the intermetallic metal pad of this joint sheet is narrower than the width of metal gasket and this time metal gasket on this;
Photoactive material is formed between the sidewall and this upper metal gasket and this time metal gasket of this intermetallic metal pad; And
Conductive protecting layer is covered on this on metal gasket.
3. image display system as claimed in claim 2 also comprises:
Colored filter substrate; And
Backlight arrangement consists of liquid crystal display with this thin film transistor base plate and colored filter substrate.
4. image display system as claimed in claim 3, also comprise electronic installation, wherein this electronic installation is mobile phone, digital camera, personal digital assistant, notebook computer, desktop computer, TV, vehicle display, GPS, aviation display, digital frame or Portable DVD player, and this electronic installation comprises:
This liquid crystal display; And
Input block couples with this liquid crystal display, and wherein this input block signal transmission is to this liquid crystal display, so that this liquid crystal display show image.
5. the manufacture method of an image display system comprises:
Substrate is provided, and it comprises viewing area and pad area;
Sequentially form lower metal layer, intermediate metal layer, upper metal level on this substrate;
Anisotropic etching is somebody's turn to do upper metal level, this intermediate metal layer and this lower metal layer to form wire in this viewing area, this wire has lower metal wire, intermetallic metal line and upper metal wire, and form joint sheet at this pad area simultaneously, this joint sheet comprises lower metal gasket, intermetallic metal pad and upper metal gasket;
This intermetallic metal line of isotropic etching, so that the width of this intermetallic metal line is narrower than the width of metal wire on this and the width of this time metal wire, and this intermetallic metal pad of etching simultaneously, so that the width of this intermetallic metal pad is narrower than the width of metal gasket and this time metal gasket on this;
In this viewing area and this pad area form the light sensation flatness layer;
Utilize light to see through and have the photomask of semi-opaque region and photic zone to this light sensation flatness layer exposure;
Stay photoactive material at this substrate and this joint sheet, this photoactive material has opening, exposes metal gasket on this; And
On this, form conductive protecting layer on metal gasket and this photoactive material.
6. image display system comprises:
Thin film transistor base plate comprises:
Substrate, it has viewing area and pad area;
Wire is arranged at above this substrate in this viewing area, and this wire has lower metal wire, intermetallic metal line and upper metal wire, and wherein the width of this intermetallic metal line is narrower than the width of metal wire on this and the width of this time metal wire;
Joint sheet is located at the pad area of this substrate, and this joint sheet comprises lower metal gasket, intermetallic metal pad and upper metal gasket, and wherein the width of the intermetallic metal pad of this joint sheet is narrower than the width of metal gasket and this time metal gasket on this;
Photoactive material is formed on this substrate and this joint sheet, and this photoactive material has opening, exposes metal gasket on this; And
Conductive protecting layer is covered on this on the metal gasket and this photoactive material.
7. image display system as claimed in claim 6 also comprises:
Colored filter substrate; And
Backlight arrangement consists of liquid crystal display with this thin film transistor base plate and colored filter substrate.
8. image display system as claimed in claim 7, also comprise electronic installation, wherein this electronic installation is mobile phone, digital camera, personal digital assistant, notebook computer, desktop computer, TV, vehicle display, GPS, aviation display, digital frame or Portable DVD player, and this electronic installation comprises:
This liquid crystal display; And
Input block couples with this liquid crystal display, and wherein this input block signal transmission is to this liquid crystal display, so that this liquid crystal display show image.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9792108P | 2008-09-18 | 2008-09-18 | |
| US61/097,921 | 2008-09-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101676781A CN101676781A (en) | 2010-03-24 |
| CN101676781B true CN101676781B (en) | 2013-02-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810172104 Active CN101676781B (en) | 2008-09-18 | 2008-11-10 | System for displaying images and fabricating method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101676781B (en) |
| TW (1) | TWI374504B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104238784B (en) * | 2013-06-08 | 2018-03-02 | 宸鸿科技(厦门)有限公司 | Contact panel |
| MY188258A (en) * | 2016-02-18 | 2021-11-24 | Mitsui Mining & Smelting Co Ltd | Copper foil for printed circuit board production, copper foil with carrier, and copper-clad laminate plate, and printed circuit board production method using copper foil for printed circuit board production, copper foil with carrier, and copper-clad laminate plate |
| CN108054141B (en) * | 2017-12-12 | 2020-11-06 | 深圳市华星光电技术有限公司 | Preparation method of display panel |
| CN109581765A (en) * | 2018-10-26 | 2019-04-05 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN109585459A (en) * | 2018-12-05 | 2019-04-05 | 惠科股份有限公司 | Preparation method, array substrate, display panel and the display device of array substrate |
| CN111554696B (en) * | 2020-05-13 | 2024-03-29 | 京东方科技集团股份有限公司 | Total reflection type display substrate, manufacturing method thereof and total reflection type display device |
| CN111682050B (en) * | 2020-06-22 | 2022-04-01 | 武汉华星光电半导体显示技术有限公司 | Touch display device and manufacturing method thereof |
| CN111679525B (en) * | 2020-06-22 | 2021-06-01 | 武汉华星光电技术有限公司 | Display panel and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101191969A (en) * | 2006-12-02 | 2008-06-04 | 龙腾光电（控股）有限公司 | Liquid crystal panel for liquid crystal display |
-
2008
- 2008-10-29 TW TW97141561A patent/TWI374504B/en not_active IP Right Cessation
- 2008-11-10 CN CN 200810172104 patent/CN101676781B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101191969A (en) * | 2006-12-02 | 2008-06-04 | 龙腾光电（控股）有限公司 | Liquid crystal panel for liquid crystal display |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平8-213631A 1996.08.20 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201013786A (en) | 2010-04-01 |
| CN101676781A (en) | 2010-03-24 |
| TWI374504B (en) | 2012-10-11 |
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