CN101728323A - Pixel structure and manufacturing method thereof - Google Patents
Pixel structure and manufacturing method thereof Download PDFInfo
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- CN101728323A CN101728323A CN200810201093A CN200810201093A CN101728323A CN 101728323 A CN101728323 A CN 101728323A CN 200810201093 A CN200810201093 A CN 200810201093A CN 200810201093 A CN200810201093 A CN 200810201093A CN 101728323 A CN101728323 A CN 101728323A
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Abstract
The invention relates to a method for manufacturing a pixel structure, which can simultaneously use the conventional photomask processing for manufacturing a thin film transistor to manufacture a reflecting layer with an accidented surface. In the process of manufacturing the thin film transistor, a protrusion is pre-manufactured below the reflecting layer which is to be formed subsequently, the protrusion and a grid electrode of the thin film transistor are formed simultaneously, or the protrusion and a semiconductor layer of the thin film transistor are formed simultaneously; meanwhile, reflecting layer formed above the protrusion can have a good undulant shape by stacking film layers on the protrusion. Thus, the method for manufacturing the pixel structure has the advantages of simple processing and low production cost; and meanwhile, the method can also be used for manufacturing a transflective pixel structure or a reflecting pixel structure.
Description
Technical field
The invention relates to a kind of dot structure and manufacture method thereof, and particularly relevant for employed dot structure and manufacture method thereof in a kind of semi-penetration semi-reflective/reflective liquid-crystal display (Transflective/Reflective Liquid Crystal Display).
Background technology
General LCD can be divided into penetration, reflective, and three kinds of semi-penetration, semi-reflectives etc.Along with the development trend of portable electronic product, can utilize the reflective and semi-penetrated semi-reflected liquid crystal display of external light source to come into one's own gradually.Yet, in LCD, when making the dot structure of known reflective or semi-penetration, semi-reflective, need carry out the making in reflector again.And, can need to increase again extra processing procedure usually, have the reflector that height rises and falls to make the surface, and promote the reflecting effect of reflector for light.
Figure 1A～Fig. 1 I illustrates the making flow process generalized section into the dot structure of known a kind of semi-penetrated semi-reflected liquid crystal display.Please, at first, provide a substrate 110, and utilize the first road light shield processing procedure (first mask) on substrate 110, to form a grid 120 earlier with reference to Figure 1A.Then, please refer to Figure 1B, on substrate 110, form a gate insulator 130 with cover gate 120.Come again, please refer to Fig. 1 C, utilize the second road light shield processing procedure (second mask), on the gate insulator above the grid 120 130, form semi-conductor layer 140.
Continue it, please refer to Fig. 1 D, utilize the 3rd road light shield processing procedure (third mask) to form one source pole 152 and a drain electrode 154 and a patterned semiconductor layer 140 ' in the both sides of this semiconductor layer 140.Come again, please refer to Fig. 1 E, on substrate 110, form protective layer 160 and cover source electrode 152, drain electrode 154 and patterned semiconductor layer 140 '.Then, please refer to Fig. 1 F, utilize the 4th this protective layer 160 of road light shield processing procedure (fourth mask) patterning, in protective layer 160, making contact window 162, and remove the protective layer 160 in the penetrating region 164 simultaneously.
Come again, please refer to Fig. 1 G, utilize the 5th this protective layer 160 of road light shield processing procedure (fifth mask) patterning, to form most protrusions 166.Continue it, please refer to Fig. 1 H, utilize the 6th road light shield processing procedure (sixthmask) on protrusion 166, to form reflector 170.Afterwards, please refer to Fig. 1 I, utilize the 7th road light shield processing procedure (seventh mask) to make pixel electrode 180, this pixel electrode 180 sees through contact window 162 and electrically connects drain electrode 154.So far, finish the making of the dot structure 100 of known semi-penetrated semi-reflected liquid crystal display.
Shown in Fig. 1 G, when desire formed a plurality of protrusion 166 with protective layer 160, this protective layer 160 needed to adopt organic materials, just can be easy to produce the protrusion 166 of height big rise and fall.Therefore, except protective layer 160 was organic material, other rete mostly was inorganic greatly.Yet because the characteristic of inorganic and organic material is inequality, so need to use different process parameter, this will make processing procedure comparatively complicated.
In addition, above-mentioned dot structure 100 needs seven road light shield processing procedures carrying out the making in thin-film transistor (being made up of with drain electrode 154 grid 120, source electrode 152) and reflector 170, so, be difficult for reducing the light shield cost.And,, also be difficult to promote the production production capacity because fabrication steps is more.
Summary of the invention
The invention provides a kind of one pixel structure process method, can simplify fabrication steps, reduce production costs and promote the production production capacity.
The invention provides a kind of dot structure, have and be easy to make simultaneously thin-film transistor, have the structure in the reflector that height rises and falls with the surface.
Based on above-mentioned, the present invention proposes a kind of one pixel structure process method, comprises the following steps.At first, provide a substrate, this substrate has a driving component district and a pixel region.Then, form a grid and most protrusions on substrate, wherein grid is positioned at the driving component district, and protrusion is positioned at pixel region.Come again, form a gate insulator cover gate and a protrusion.Continue it, on the gate insulator above grid and the protrusion, form semi-conductor layer.Then, the both sides of the patterned semiconductor layer above grid form an one source pole and a drain electrode.Come again, form a patterning protective layer covered substrate, and the patterning protective layer exposes the part drain electrode.Continue it, on substrate, form a pixel electrode, and pixel electrode is electrically connected at drain electrode.Afterwards, on the pixel electrode of protrusion top, form at least one reflector.
In one embodiment of this invention, the material in above-mentioned reflector is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
In one embodiment of this invention, above-mentioned pixel region comprises an echo area and a penetrating region, and protrusion is to be arranged in the echo area, and pixel electrode extends to penetrating region from the echo area.
In one embodiment of this invention, the material of above-mentioned patterning protective layer comprises inorganic.
In one embodiment of this invention, when the both sides of the above-mentioned semiconductor layer above grid form source electrode with drain electrode, more comprise the semiconductor layer that removes the grid upper section, to form a patterned semiconductor layer.
The present invention reintroduces a kind of one pixel structure process method, comprises the following steps.At first, provide a substrate, this substrate has a driving component district and a pixel region.Then, form a grid and most protrusions on substrate, wherein grid is positioned at the driving component district, and protrusion is positioned at pixel region.Come again, form a gate insulator cover gate and a protrusion.Continue it, on the gate insulator above grid and the protrusion, form semi-conductor layer.Then, the both sides of the patterned semiconductor layer above grid form an one source pole and a drain electrode, and form reflector covering protrusion simultaneously.Continue it, form a patterning protective layer covered substrate, and the patterning protective layer exposes the part drain electrode.Afterwards, on substrate, form a pixel electrode, and pixel electrode electrically connects drain electrode.
In one embodiment of this invention, above-mentioned reflector is identical rete and is connected with each other with drain electrode.
In one embodiment of this invention, the material in above-mentioned reflector is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
In one embodiment of this invention, above-mentioned pixel region comprises an echo area and a penetrating region, and protrusion is to be arranged in the echo area, and pixel electrode extends to penetrating region from the echo area.
In one embodiment of this invention, the material of above-mentioned patterning protective layer comprises inorganic.
In one embodiment of this invention, the both sides of above-mentioned semiconductor layer in the grid top form source electrode and drain electrode, and when forming the reflector simultaneously and covering protrusion, more comprise the semiconductor layer that removes the grid upper section, to form a patterned semiconductor layer.
The present invention proposes a kind of dot structure again, comprises substrate, grid and most protrusions, gate insulator, patterned semiconductor layer, source electrode and drain electrode, patterning protective layer, pixel electrode and reflector.Substrate has a driving component district and a pixel region.Grid and protrusion are arranged on the substrate, and wherein, grid is positioned at the driving component district, and protrusion is positioned at pixel region.Gate insulator cover gate and protrusion.Patterned semiconductor layer is arranged on the gate insulator of grid and protrusion top.Source electrode and drain electrode are arranged at the both sides of the patterned semiconductor layer of grid top.Patterning protective layer covered substrate and expose part drain electrode.Pixel electrode is arranged at pixel region, and pixel electrode electrically connects drain electrode.The reflector is arranged on the pixel electrode of protrusion top, or is arranged between the patterned semiconductor layer and patterning protective layer of protrusion top.
In one embodiment of this invention, in the time of between the patterned semiconductor layer that above-mentioned reflector is arranged at protrusion top and the patterning protective layer, the reflector is identical rete and is connected with each other with draining.
In one embodiment of this invention, the material in above-mentioned reflector is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
In one embodiment of this invention, above-mentioned pixel region comprises an echo area and a penetrating region, and protrusion is to be arranged in the echo area, and pixel electrode extends to penetrating region from the echo area.
In one embodiment of this invention, the material of above-mentioned patterning protective layer comprises inorganic.
The present invention reintroduces a kind of one pixel structure process method, comprises the following steps.At first, provide a substrate, this substrate has a driving component district and a pixel region.Then, on substrate, form grid, and grid is positioned at the driving component district.Come again, form a gate insulator cover gate.Continue it, form semi-conductor layer on gate insulator, wherein semiconductor layer comprises a channel layer and most protrusions, and channel layer is positioned on the gate insulator of grid top, and protrusion is arranged on the gate insulator of pixel region.Then, form an one source pole and a drain electrode in the both sides of channel layer, and form reflector covering protrusion simultaneously.Continue it, form a patterning protective layer covered substrate, and the patterning protective layer exposes the part drain electrode.Afterwards, on substrate, form a pixel electrode, and pixel electrode electrically connects drain electrode.
In one embodiment of this invention, above-mentioned reflector is identical rete and is connected with each other with drain electrode.
In one embodiment of this invention, the material in above-mentioned reflector is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
In one embodiment of this invention, above-mentioned pixel region comprises an echo area and a penetrating region, and protrusion is to be arranged in the echo area, and pixel electrode extends to penetrating region from the echo area.
In one embodiment of this invention, the material of above-mentioned patterning protective layer comprises inorganic.
In one embodiment of this invention, above-mentioned both sides in channel layer form source electrode and drain electrode, and when forming the reflector simultaneously and covering protrusion, more comprise the semiconductor layer that removes the grid upper section, to form a patterned semiconductor layer.
The present invention proposes a kind of dot structure again, comprises substrate, grid, gate insulator, patterned semiconductor layer, source electrode and drain electrode, patterning protective layer, pixel electrode and reflector.Substrate has a driving component district and a pixel region.Grid is arranged on the substrate, and grid is positioned at the driving component district.The gate insulator cover gate.Patterned semiconductor layer is arranged on the gate insulator, and wherein patterned semiconductor layer comprises a channel layer and most protrusions, and channel layer is positioned on the gate insulator of this grid top, and protrusion is arranged on the gate insulator of pixel region.Source electrode and drain electrode are arranged at the both sides of channel layer.Patterning protective layer covered substrate and expose part drain electrode.Pixel electrode is arranged on the substrate, and pixel electrode electrically connects drain electrode.The reflector covers protrusion, and the reflector is between protrusion and patterning protective layer.
In one embodiment of this invention, above-mentioned reflector is identical rete and is connected with each other with drain electrode.
In one embodiment of this invention, the material in above-mentioned reflector is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
In one embodiment of this invention, above-mentioned pixel region comprises an echo area and a penetrating region, and protrusion is to be arranged in the echo area, and pixel electrode extends to penetrating region from the echo area.
In one embodiment of this invention, the material of above-mentioned patterning protective layer comprises inorganic.
Production method of pixel structure of the present invention is utilized existing five road light shield processing procedures, promptly can finish the making of thin-film transistor, and makes the surface in reflector have the shape that height rises and falls simultaneously.So, can simplify fabrication steps, reduce the light shield cost and promote the production production capacity.In addition, can be easy to make simultaneously thin-film transistor, have the just dot structure in the reflector of fluctuating by above-mentioned production method of pixel structure with the surface.
Description of drawings
Figure 1A～Fig. 1 I illustrates the making flow process generalized section into the dot structure of known a kind of semi-penetrated semi-reflected liquid crystal display.
Fig. 2 A～Fig. 2 H illustrates the making flow process generalized section into the dot structure of first embodiment of the invention.
Fig. 3 A～Fig. 3 G illustrates the making flow process generalized section into the dot structure of second embodiment of the invention.
Fig. 4 A～Fig. 4 G illustrates the making flow process generalized section into the dot structure of third embodiment of the invention.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Embodiment
In following all embodiment, production method of pixel structure of the present invention is suitable for making the dot structure of semi-penetration, semi-reflective or reflective dot structure.Below graphic be that example describes only with the dot structure of semi-penetration, semi-reflective, the present invention does not limit the making of the dot structure that only is used for semi-penetration, semi-reflective.
First embodiment
Fig. 2 A～Fig. 2 H illustrates the making flow process generalized section into the dot structure of first embodiment of the invention, please in regular turn with reference to Fig. 2 A～2H.
At first, please refer to Fig. 2 A, a substrate 210 is provided, this substrate 210 has a driving component district 212 and a pixel region 214.This substrate 210 can be the substrate of glass substrate, silicon substrate or other similar material.Then, form a grid 220a and most protrusion 220b on substrate 210, wherein grid 220a is positioned at driving component district 212, and protrusion 220b is positioned at pixel region 214.Grid 220a and protrusion 220b utilize the first road light shield processing procedure made, and the material of grid 220a and protrusion 220b for example is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
Come again, please refer to Fig. 2 B, form a gate insulator 230 cover gate 220a and protrusion 220b.The method that forms gate insulator 230 for example is the long-pending method in chemical gaseous phase Shen, and the material of gate insulator 230 for example is silica, silicon nitride, silicon oxynitride or similar material.
Continue it, please refer to Fig. 2 C, on the gate insulator 230 above grid 220a and the protrusion 220b, form semi-conductor layer 240.This semiconductor layer 240 utilizes the second road light shield processing procedure made.And the material of this semiconductor layer 240 for example is amorphous silicon or polysilicon.
Then, please be simultaneously with reference to Fig. 2 C and Fig. 2 D, the both sides of the semiconductor layer 240 above grid 220a form an one source pole 252 and a drain electrode 254.This source electrode 252 utilizes the 3rd road light shield processing procedure made with drain electrode 254, and utilizes this light shield to form a patterned semiconductor layer 240 ', and wherein, the patterned semiconductor layer 240 ' that is positioned at grid 220a top is as a channel layer.More specifically, can form source electrode 252 and drain electrode 254 o'clock in the both sides of the semiconductor layer 240 above the grid 220a, more comprise the semiconductor layer 240 that removes grid 220a upper section, to form a patterned semiconductor layer 240 '.In addition, the material of source electrode 252, drain electrode 254 for example is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.Particularly, grid 220a, source electrode 252 have constituted a thin-film transistor with drain electrode 254.
Come again, please form a patterning protective layer 260 ' covered substrate simultaneously with reference to Fig. 2 E and Fig. 2 F, and patterning protective layer 260 ' exposes part drain electrode 254.The material of this patterning protective layer 260 ' for example is an inorganic.More specifically, illustrate, at first utilize the long-pending layer protective layer 260 in long-pending method Shen on substrate 210, chemical gaseous phase Shen as Fig. 2 E.Afterwards, illustrate, utilize the 4th road light shield processing procedure in protective layer 260, to make a contact window 262, and then make patterning protective layer 260 ' expose part drain electrode 254 as Fig. 2 F.
Particularly, because patterning protective layer 260 ' uses inorganic, compared to the protective layer 160 (illustrating as Fig. 1 G～Fig. 1 H) of known use organic material, this step does not need to change for existing process parameter, and helps simplifying processing procedure.
Continue it, please refer to Fig. 2 G, on substrate 210, form a pixel electrode 270, and pixel electrode 270 is electrically connected at drain electrode 254.The material of this pixel electrode 270 is the electrically conducting transparent material, and for example, the material of pixel electrode 270 can be indium tin oxide or indium-zinc oxide.And this pixel electrode 270 utilizes the 5th road light shield processing procedure made, and pixel electrode 270 is to be electrically connected to drain electrode 254 via contact window 262.
Afterwards, please refer to Fig. 2 H, on the pixel electrode 270 of protrusion 220b top, form a reflector 280.The material in this reflector 280 for example is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.This reflector 280 utilizes the 6th road light shield processing procedure made.So far, finish the making of dot structure 200.
Hold above-mentionedly, shown in Fig. 2 H, when reflector 280 only was arranged in the partial pixel district 214, this dot structure 200 was dot structures of semi-penetration, semi-reflective.More specifically, pixel region 214 comprises an echo area 214a and a penetrating region 214b, and protrusion 220b is arranged in echo area 214a, and pixel electrode 270 extends to penetrating region 214b from echo area 214a.Therefore, the light that comes from the outside can be reflected in the reflector 280 in the 214a of echo area, makes from backlight module (not illustrating) and by the light of back side outgoing and can utilize at the pixel electrode 270 of penetrating region 214b.
But, when reflector 280 is arranged at whole pixel regions 214, promptly become reflective dot structure (not illustrating) this moment.Particularly, cooperate the step that is illustrated as Fig. 2 A, can in whole pixel region 214 (comprising echo area 214a and penetrating region 214b), form protrusion 220b earlier, so that the reflector 280 of follow-up made has good light reflecting effect.
From the above, utilize six road light shield processing procedures can make grid 220a and protrusion 220b simultaneously, and make the surface in reflector 280 have the shape that height rises and falls by the storehouse of rete.Compared to known seven road light shield processing procedures, the manufacture method of this dot structure 200 has simple fabrication steps, can reduce cost and promote the production production capacity.
Below will go on to say dot structure 200 via above-mentioned production method of pixel structure made.Please continue the H with reference to Fig. 2, this dot structure 200 comprises: substrate 210, grid 220a and most protrusion 220b, gate insulator 230, patterned semiconductor layer 240 ', source electrode 252 and drain electrode 254, patterning protective layer 260 ', pixel electrode 270 and reflector 280.
Shown in Fig. 2 H, substrate 210 has a driving component district 212 and a pixel region 214.Grid 220a and protrusion 220b are arranged on the substrate 210, and wherein, grid 220a is positioned at driving component district 212, and protrusion 220b is positioned at pixel region 214.Gate insulator 230 cover gate 220a and protrusion 220b.Patterned semiconductor layer 240 ' is arranged on the gate insulator 230 of grid 220a and protrusion 220b top.Source electrode 252 and drain electrode 254 are arranged at the both sides of the patterned semiconductor layer 240 ' of grid 220a top.Patterning protective layer 260 ' covered substrate 210 and expose part drain electrode 254.Pixel electrode 270 is arranged on the substrate 210, and pixel electrode 270 electrically connects drain electrode 254.Reflector 280 is arranged on the pixel electrode 270 of protrusion 220b top.
Similarly, in the time of on the pixel electrode 270 above reflector 280 only is arranged at protrusion 220b, this dot structure 200 is dot structures of semi-penetration, semi-reflective.Yet when reflector 280 is arranged on the pixel electrode 270 and be arranged in whole pixel region 214 (not being illustrated in figure), this dot structure is a reflective dot structure.Above-mentioned dot structure 200 has simple and is easy to make structure, so can save production cost.
, therefore do not repeated in described in the content of Fig. 2 A～Fig. 2 H as for the employed material of each assembly of dot structure 200, rete set-up mode etc.
Second embodiment
Fig. 3 A～Fig. 3 G illustrates the making flow process generalized section into the dot structure of second embodiment of the invention, please in regular turn with reference to Fig. 3 A～3G.
At first, please refer to Fig. 3 A, a substrate 310 is provided, this substrate 310 has a driving component district 312 and a pixel region 314.This substrate 310 can be the substrate of glass substrate, silicon substrate or other similar material.Then, form a grid 320a and most protrusion 320b on substrate 310, wherein grid 320a is positioned at driving component district 312, and protrusion 320b is positioned at pixel region 314.Grid 320a and protrusion 320b utilize the first road light shield processing procedure made, and the material of grid 320a and protrusion 320b for example is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
Come again, please refer to Fig. 3 B, form a gate insulator 330 cover gate 320a and protrusion 320b.The method that forms gate insulator 330 for example is the long-pending method in chemical gaseous phase Shen, and the material of gate insulator 330 for example is silica, silicon nitride, silicon oxynitride or similar material.
Continue it, please refer to Fig. 3 C, on the gate insulator 330 above grid 320a and the protrusion 320b, form semi-conductor layer 340.This semiconductor layer 340 utilizes the second road light shield processing procedure made.And the material of this semiconductor layer 340 for example is amorphous silicon or polysilicon.
Then, ask the while with reference to Fig. 3 C and Fig. 3 D, the both sides of the semiconductor layer 340 above grid 320a form an one source pole 352 and a drain electrode 354, and form a reflector 360 covering protrusion 320b simultaneously.This source electrode 352, drain electrode 354 utilize the 3rd road light shield processing procedure made with reflector 360, and utilize this light shield to form a patterned semiconductor layer 340 ', and wherein, the patterned semiconductor layer 340 ' that is positioned at grid 320a top is as a channel layer.More specifically, the both sides of the semiconductor layer 340 above grid 320a form source electrode 352 and drain electrode 354, and when forming reflector 360 covering protrusion 320b simultaneously, more comprise the semiconductor layer 340 that removes grid 320a upper section, to form a patterned semiconductor layer 340 '.
In addition, source electrode 352, drain electrode 354 for example are to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof with the material in reflector 360.And grid 320a, source electrode 352 have constituted a thin-film transistor with drain electrode 354.Different with aforementioned first embodiment is to have formed reflector 360 simultaneously in the 3rd road light shield processing procedure.
Particularly, shown in Fig. 3 D, reflector 360 is identical retes and is connected with each other with drain electrode 354.Yet in other embodiments, also can make reflector 360 and drain electrode 354 is (not illustrating) separated from one another.
Continue it, please form a patterning protective layer 370 ' covered substrate simultaneously with reference to Fig. 3 E and Fig. 3 F, and patterning protective layer 370 ' exposes part drain electrode 354.The material of this patterning protective layer 370 ' for example is an inorganic.More specifically, illustrate, utilize the long-pending layer protective layer 370 in long-pending method Shen on whole base plate 310, chemical gaseous phase Shen as Fig. 3 E.Afterwards, illustrate, utilize the 4th road light shield processing procedure in protective layer 370, to make a contact window 372, and then make patterning protective layer 370 ' expose part drain electrode 354 as Fig. 3 F.
Particularly, because patterning protective layer 370 ' uses inorganic, compared to the protective layer 160 (illustrating as Fig. 1 G～Fig. 1 H) of known use organic material, this step does not need to change for existing process parameter, and helps simplifying processing procedure.In addition, patterning protective layer 370 ' can also use transparent inorganic, makes reflector 360 more can reflect the light that comes from the outside effectively.
Afterwards, please refer to Fig. 3 G, on substrate 310, form a pixel electrode 380, and pixel electrode 380 electrically connects drain electrode 354.The material of this pixel electrode 380 is the electrically conducting transparent material, and for example, the material of pixel electrode 380 can be indium tin oxide or indium-zinc oxide.And this pixel electrode 380 utilizes the 5th road light shield processing procedure made, and pixel electrode 380 is to be electrically connected to drain electrode 354 via contact window 372.
It should be noted that the reflector 360 shown in Fig. 3 G is arranged in the partial pixel district 314, at this moment, dot structure 300 is the dot structure of semi-penetration, semi-reflective.More specifically, this pixel region 314 comprises an echo area 314a and a penetrating region 314b, and protrusion 320b is arranged in echo area 314a, and pixel electrode 380 extends to penetrating region 314b from echo area 314a.So the light that comes from the outside can be reflected in the reflector 360 in the 314a of echo area, and can be used to from backlight module (not illustrating) and by the light of back side outgoing at the pixel electrode 380 of penetrating region 314b.
But reflector 360 also can be arranged in whole pixel region 314, and becomes reflective dot structure (not illustrating).Particularly, cooperate the step that is illustrated as Fig. 3 A, can in whole pixel region 314, form protrusion 320b earlier, so that the reflector 360 of follow-up made has better light reflecting effect.
From the above, above-mentioned production method of pixel structure is only utilized five road light shields, can form the dot structure of semi-penetration, semi-reflective or reflective dot structure, thereby can simplify processing procedure and reduce cost.In other words, utilize original light shield processing procedure of making thin-film transistor can make grid 320a and protrusion 320b simultaneously, and can make source electrode 352, drain electrode 354 and reflector 360 simultaneously, therefore, need not increase extra light shield processing procedure, can be so that the surface in reflector 360 has good height undulations.
Below will go on to say dot structure 300 via above-mentioned production method of pixel structure made.Please continue the G with reference to Fig. 3, this dot structure 300 comprises substrate 310, grid 320a and most protrusion 320b, gate insulator 330, patterned semiconductor layer 340 ', source electrode 352 and drain electrode 354, patterning protective layer 370 ', pixel electrode 380 and reflector 360.
Please refer to Fig. 3 G, substrate 310 has driving component district 312 and pixel region 314.Grid 320a and protrusion 320b are arranged on the substrate 310, and wherein, grid 320a is positioned at driving component district 312, and protrusion 320b is positioned at pixel region 314.Gate insulator 330 cover gate 320a and protrusion 320b.Patterned semiconductor layer 340 ' is arranged on the gate insulator 330 of grid 320a and protrusion 320b top.Source electrode 352 and drain electrode 354 are arranged at the both sides of the patterned semiconductor layer 340 ' of grid 320a top.Patterning protective layer 370 ' covered substrate 310 and expose part drain electrode 354.Pixel electrode 380 is arranged on the substrate 310, and pixel electrode 380 electrically connects drain electrode 354.Reflector 360 is arranged between the patterned semiconductor layer 340 ' and patterning protective layer 370 ' of protrusion 320b top.
Illustrate as Fig. 3 G, in the time of between patterned semiconductor layer 340 ' above reflector 360 is arranged at protrusion 320b and the patterning protective layer 370 ', reflector 360 is identical retes and is connected with each other with drain electrode 354.Certainly, reflector 360 and drain electrode 354 also can not link to each other each other (not illustrating).
It should be noted that the dot structure that this dot structure 300 can be a semi-penetration, semi-reflective, or reflective dot structure.
When dot structure 300 is the dot structure of semi-penetration, semi-reflective, pixel region 314 can comprise an echo area 314a and a penetrating region 314b, and protrusion 320b is arranged in echo area 314a, and pixel electrode 380 extends to penetrating region 314b from echo area 314a.
Certainly, reflector 360 is arranged in the whole pixel region 314, makes dot structure 300 be reflective dot structure (not illustrating).More specifically, cooperate the 3rd road light shield processing procedure shown in Fig. 3 D, when forming source electrode 352, drain electrode 354, reflector 360 is extended in the whole pixel region 314 (not being illustrated among the figure) with reflector 360.That is reflector 360 can extend among echo area 314a and the penetrating region 314b.Above-mentioned dot structure 300 has simple structure and is easy to make, and then can save production cost.
The 3rd embodiment
Fig. 4 A～Fig. 4 G illustrates the making flow process generalized section into the dot structure of third embodiment of the invention, please in regular turn with reference to Fig. 4 A～4G.
At first, please refer to Fig. 4 A, a substrate 410 is provided, this substrate 410 has a driving component district 412 and a pixel region 414.This substrate 410 can be the substrate of glass substrate, silicon substrate or other similar material.Then, on substrate 410, form grid 420, and grid 420 is positioned at driving component district 412.Grid 420 utilizes the first road light shield processing procedure made, and the material of grid 420 for example is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.Particularly, in the first road light shield processing procedure, only form grid 420.
Come again, please refer to Fig. 4 B, form a gate insulator 430 cover gate 420.The method that forms gate insulator 430 for example is the long-pending method in chemical gaseous phase Shen, and the material of gate insulator 430 for example is silica, silicon nitride, silicon oxynitride or similar material.
Continue it, please refer to Fig. 4 C, on gate insulator 430, form semi-conductor layer 440, wherein semiconductor layer 440 comprises a channel layer 440a and most protrusion 440b, and channel layer 440a is positioned on the gate insulator 430 of grid 420 tops, and protrusion 440b is arranged on the gate insulator 430 of pixel region 414.This semiconductor layer 440 utilizes the second road light shield processing procedure made.And the material of this semiconductor layer 440 for example is amorphous silicon or polysilicon.Different with second embodiment with aforementioned first embodiment is that present embodiment forms channel layer 440a and protrusion 440b simultaneously at the second road light shield processing procedure.
Then, please refer to Fig. 4 D, form an one source pole 452 and a drain electrode 454 in the both sides of channel layer 440a, and form a reflector 460 covering protrusion 440b simultaneously.This source electrode 452, drain electrode 454 utilize the 3rd road light shield processing procedure made with reflector 460, and utilize this light shield to form a patterned semiconductor layer 440 '.More specifically, can form source electrode 452 and drain electrode 454, and when forming reflector 460 simultaneously and covering protrusion 440b, more comprise the semiconductor layer 440 that removes grid 420 upper sections, to form a patterned semiconductor layer 440 ' in the both sides of channel layer 440a.In addition, source electrode 452, drain electrode 454 for example are to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof with the material in reflector 460.And grid 420, source electrode 452 have constituted a thin-film transistor with drain electrode 454.Particularly, the reflector shown in Fig. 4 D 460 is identical retes and is connected with each other with drain electrode 454.Yet in other embodiments, also can make reflector 460 and drain electrode 454 is (not illustrating) separated from one another.
Continue it, please form a patterning protective layer 470 ' covered substrate 410 simultaneously with reference to Fig. 4 E and Fig. 4 F, and patterning protective layer 470 ' exposes part drain electrode 454.The material of this patterning protective layer 470 ' for example is an inorganic.More specifically, illustrate, utilize the long-pending layer protective layer 470 in long-pending method Shen on whole base plate 410, chemical gaseous phase Shen as Fig. 4 E.Afterwards, illustrate, utilize the 4th road light shield processing procedure in protective layer 470, to make a contact window 472, and then make patterning protective layer 470 ' expose part drain electrode 454 as Fig. 4 F.
Particularly, because patterning protective layer 470 ' uses inorganic, compared to the protective layer 160 (illustrating as Fig. 1 G～Fig. 1 H) of known use organic material, this step does not need to change for existing process parameter, and helps simplifying processing procedure.In addition, patterning protective layer 470 ' can also use transparent inorganic, so that the light that comes from the outside can be more effectively reflected in reflector 460.
Afterwards, please refer to Fig. 4 G, on substrate 410, form a pixel electrode 480, and pixel electrode 480 electrically connects drain electrode 454.The material of this pixel electrode 480 is the electrically conducting transparent material, and for example, the material of pixel electrode 480 can be indium tin oxide or indium-zinc oxide.And this pixel electrode 480 utilizes the 5th road light shield processing procedure made, and pixel electrode 480 is to be electrically connected to drain electrode 454 via contact window 472.
Hold above-mentionedly, when the reflector 460 shown in Fig. 4 G only was arranged in the partial pixel district 414, this dot structure 400 was dot structures of semi-penetration, semi-reflective.More specifically, this pixel region 414 comprises an echo area 414a and a penetrating region 414b, and protrusion 440b is arranged in echo area 414a, and pixel electrode 480 extends to penetrating region 414b from echo area 414a.Therefore, the light that comes from the outside can be reflected in the reflector 460 in the 414a of echo area, makes from backlight module (not illustrating) and by the light of back side outgoing and can utilize at the pixel electrode 480 of penetrating region 414b.
But, when reflector 460 also can be arranged at whole pixel regions 414, promptly become reflective dot structure (not illustrating) this moment.Particularly, cooperate the step that is illustrated as Fig. 4 C, can in whole pixel region 414, form protrusion 440b earlier, so that the reflector 460 of follow-up made has better light reflecting effect.
From the above, above-mentioned production method of pixel structure is only utilized five road light shields, can form the dot structure of semi-penetration, semi-reflective or reflective dot structure, thereby can simplify processing procedure and save cost.In other words, utilize original light shield processing procedure of making thin-film transistor to make channel layer 440a and protrusion 440b simultaneously, and make source electrode 452, drain electrode 454 and reflector 460 simultaneously.Therefore, need not increase extra light shield processing procedure, can be so that the surface in reflector 460 has the shape that height rises and falls.
Below will go on to say dot structure 400 via above-mentioned production method of pixel structure made.Please continue the G with reference to Fig. 4, this dot structure 400 comprises substrate 410, grid 420, gate insulator 430, patterned semiconductor layer 440 ', source electrode 452 and drain electrode 454, patterning protective layer 470 ', pixel electrode 480 and reflector 460.
Illustrate as Fig. 4 G, substrate 410 has a driving component district 412 and a pixel region 414.Grid 420 is arranged on the substrate 410, and grid 420 is positioned at driving component district 412.Gate insulator 430 cover gate 420.Patterned semiconductor layer 440 ' is arranged on the gate insulator 430, wherein patterned semiconductor layer 440 ' comprises a channel layer 440a and most protrusion 440b, and channel layer 440a is positioned on the gate insulator 430 of these grid 420 tops, and protrusion 440b is arranged on the gate insulator 430 of pixel region 414.Source electrode 452 and drain electrode 454 are arranged at the both sides of channel layer 440a.Patterning protective layer 470 ' covered substrate 410 and expose part drain electrode 454.Pixel electrode 480 is arranged on the substrate 410, and pixel electrode 480 electrically connects drain electrode 454.Reflector 460 covers protrusion 440b, and reflector 460 is positioned between protrusion 440b and the patterning protective layer 470 '.
When the reflector 460 that is illustrated as Fig. 4 G was positioned between protrusion 440b and the patterning protective layer 470 ', reflector 460 was identical retes and is connected with each other with drain electrode 454.Certainly, reflector 460 and drain electrode 454 also can not link to each other each other (not illustrating).
In addition, when this dot structure 400 is the dot structure of semi-penetration, semi-reflective, pixel region 414 can comprise an echo area 414a and a penetrating region 414b, and protrusion 440b is arranged in echo area 414a, and pixel electrode 480 extends to penetrating region 414b from echo area 414a.
Certainly, reflector 460 is arranged in the whole pixel region 414, makes this dot structure become reflective dot structure (not being illustrated among the figure).More specifically, cooperate the 3rd road light shield processing procedure, when forming source electrode 452, drain electrode 454, reflector 460 is extended in the whole pixel region 414 (not being illustrated among the figure) with reflector 460 as Fig. 4 D, that is reflector 460 can extend among echo area 414a and the penetrating region 414b.At this moment, dot structure 400 is a reflective dot structure.Above-mentioned dot structure 400 has simple structure and is easy to make, and then can save production cost
In sum, dot structure of the present invention and manufacture method thereof have following advantage:
(1) original light shield processing procedure of utilize making thin-film transistor is made grid and protrusion simultaneously or is made channel layer simultaneously and protrusion or make source electrode, drain electrode and reflector simultaneously, therefore, need not increase extra light shield processing procedure, can make the surface in reflector have the shape that height rises and falls.
(2) protective layer adopts inorganic, uses organic material compared to known protective layer, does not need to change existing processing procedure.And, utilize the storehouse of rete, also can under the situation of using inorganic, make the surface in reflector be easy to have the shape that height rises and falls.
(3) the employed light shield quantity of this one pixel structure process method is few, so processing procedure is simple, and the light shield cost is low.
(4) this dot structure is easy to make simultaneously thin-film transistor, has the structure in the reflector that height rises and falls with the surface with having.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (27)
1. an one pixel structure process method is characterized in that, comprising:
One substrate is provided, and this substrate has a driving component district and a pixel region;
Form a grid and most protrusions on this substrate, wherein this grid is positioned at this driving component district, and those protrusions are positioned at this pixel region;
Form a gate insulator and cover this grid and those protrusions;
On this gate insulator above this grid and those protrusions, form semi-conductor layer;
The both sides of this semiconductor layer above this grid form an one source pole and a drain electrode;
Form a patterning protective layer and cover this substrate, and this patterning protective layer exposes this drain electrode of part;
On this substrate, form a pixel electrode, and this pixel electrode is electrically connected at this drain electrode; And
On this pixel electrode of those protrusion tops, form at least one reflector.
2. one pixel structure process method as claimed in claim 1 is characterized in that, the material in this reflector is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
3. one pixel structure process method as claimed in claim 1 is characterized in that, this pixel region comprises an echo area and a penetrating region, and those protrusions are to be arranged in this echo area, and this pixel electrode extends to this penetrating region from this echo area.
4. one pixel structure process method as claimed in claim 1 is characterized in that the material of this patterning protective layer comprises inorganic.
5. one pixel structure process method as claimed in claim 1, it is characterized in that, when the both sides of this semiconductor layer above this grid form this source electrode and this drain electrode, more comprise this semiconductor layer that removes this grid upper section, to form a patterned semiconductor layer.
6. an one pixel structure process method is characterized in that, comprising:
One substrate is provided, and this substrate has a driving component district and a pixel region;
Form a grid and most protrusions on this substrate, wherein this grid is positioned at this driving component district, and those protrusions are positioned at this pixel region;
Form a gate insulator and cover this grid and those protrusions;
On this gate insulator above this grid and those protrusions, form semi-conductor layer;
Form one source pole in the both sides of this semiconductor layer of this grid top and drain, and form a reflector simultaneously and cover those protrusions with one;
Form a patterning protective layer and cover this substrate, and this patterning protective layer exposes this drain electrode of part; And
On this substrate, form a pixel electrode, and this pixel electrode electrically connects this drain electrode.
7. one pixel structure process method as claimed in claim 6 is characterized in that, this reflector is identical rete with this drain electrode and is connected with each other.
8. one pixel structure process method as claimed in claim 6 is characterized in that, the material in this reflector is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
9. one pixel structure process method as claimed in claim 6 is characterized in that, this pixel region comprises an echo area and a penetrating region, and those protrusions are to be arranged in this echo area, and this pixel electrode extends to this penetrating region from this echo area.
10. one pixel structure process method as claimed in claim 6 is characterized in that the material of this patterning protective layer comprises inorganic.
11. one pixel structure process method as claimed in claim 6, it is characterized in that, the both sides of this semiconductor layer above this grid form this source electrode and this drain electrode, and when forming this reflector simultaneously and covering those protrusions, more comprise this semiconductor layer that removes this grid upper section, to form a patterned semiconductor layer.
12. a dot structure is characterized in that, comprising:
One substrate, this substrate have a driving component district and a pixel region;
One grid and most protrusions are arranged on this substrate, and wherein, this grid is positioned at this driving component district, and those protrusions are positioned at this pixel region;
One gate insulator covers this grid and those protrusions;
One patterned semiconductor layer is arranged on this gate insulator of this grid and those protrusions top;
One source pole and one drains, and is arranged at the both sides of this patterned semiconductor layer of this grid top;
One patterning protective layer covers this substrate and exposes this drain electrode of part;
One pixel electrode be arranged on this substrate, and this pixel electrode electrically connects this drain electrode; And
One reflector is arranged on this pixel electrode of those protrusion tops, or is arranged between this patterned semiconductor layer and this patterning protective layer of those protrusion tops.
13. dot structure as claimed in claim 12 is characterized in that, this reflector is identical rete with this drain electrode and is connected with each other.
14. dot structure as claimed in claim 12 is characterized in that, the material in this reflector is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
15. dot structure as claimed in claim 12 is characterized in that, this pixel region comprises an echo area and a penetrating region, and those protrusions are to be arranged in this echo area, and this pixel electrode extends to this penetrating region from this echo area.
16. dot structure as claimed in claim 12 is characterized in that, the material of this patterning protective layer comprises inorganic.
17. an one pixel structure process method is characterized in that, comprising:
One substrate is provided, and this substrate has a driving component district and a pixel region;
On this substrate, form a grid, and this grid is positioned at this driving component district;
Form a gate insulator and cover this grid;
Form semi-conductor layer on this gate insulator, wherein this semiconductor layer comprises a channel layer and most protrusions, and this channel layer is positioned on this gate insulator of this grid top, and those protrusions are arranged on this gate insulator of this pixel region;
Form one source pole in the both sides of this channel layer and drain, and form a reflector simultaneously and cover those protrusions with one;
Form a patterning protective layer and cover this substrate, and this patterning protective layer exposes this drain electrode of part; And
On this substrate, form a pixel electrode, and this pixel electrode electrically connects this drain electrode.
18. one pixel structure process method as claimed in claim 17 is characterized in that, this reflector is identical rete with this drain electrode and is connected with each other.
19. one pixel structure process method as claimed in claim 17 is characterized in that, the material in this reflector is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
20. one pixel structure process method as claimed in claim 17 is characterized in that, this pixel region comprises an echo area and a penetrating region, and those protrusions are to be arranged in this echo area, and this pixel electrode extends to this penetrating region from this echo area.
21., it is characterized in that the material of this patterning protective layer comprises inorganic as the 17th described one pixel structure process method of claim.
22. one pixel structure process method as claimed in claim 17, it is characterized in that, form this source electrode and this drain electrode in the both sides of this semiconductor layer, and when forming this reflector simultaneously and covering those protrusions, more comprise this semiconductor layer that removes this grid upper section, to form a patterned semiconductor layer.
23. a dot structure is characterized in that, comprising:
One substrate, this substrate have a driving component district and a pixel region;
One grid is arranged on this substrate, and this grid is positioned at this driving component district;
One gate insulator covers this grid;
One patterned semiconductor layer, be arranged on this gate insulator, wherein this patterned semiconductor layer comprises a channel layer and most protrusions, and this channel layer is positioned on this gate insulator of this grid top, and those protrusions are arranged on this gate insulator of this pixel region;
One source pole and one drains, and is arranged at the both sides of this channel layer;
One patterning protective layer covers this substrate and exposes this drain electrode of part;
One pixel electrode be arranged on this substrate, and this pixel electrode electrically connects this drain electrode; And
One reflector covers those protrusions, and this reflector is between those protrusions and this patterning protective layer.
24. dot structure as claimed in claim 23 is characterized in that, this reflector is identical rete with this drain electrode and is connected with each other.
25. dot structure as claimed in claim 23 is characterized in that, the material in this reflector is to be selected from chromium, aluminium, titanium, molybdenum, tungsten, tantalum, copper and combination thereof.
26. dot structure as claimed in claim 23 is characterized in that, this pixel region comprises an echo area and a penetrating region, and those protrusions are to be arranged in this echo area, and this pixel electrode extends to this penetrating region from this echo area.
27. dot structure as claimed in claim 23 is characterized in that, the material of this patterning protective layer comprises inorganic.
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| CN200810201093A CN101728323A (en) | 2008-10-13 | 2008-10-13 | Pixel structure and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142445A (en) * | 2010-12-24 | 2011-08-03 | 福建华映显示科技有限公司 | Array substrate of active component and production method thereof |
| CN102629048A (en) * | 2011-07-13 | 2012-08-08 | 京东方科技集团股份有限公司 | Liquid crystal display panel and driving method thereof |
| CN105739157A (en) * | 2016-05-04 | 2016-07-06 | 上海中航光电子有限公司 | Array base plate, manufacturing method of array base plate, and liquid crystal display device |
| CN105938840A (en) * | 2016-07-05 | 2016-09-14 | 深圳市华星光电技术有限公司 | Array substrate and display panel |
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2008
- 2008-10-13 CN CN200810201093A patent/CN101728323A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142445A (en) * | 2010-12-24 | 2011-08-03 | 福建华映显示科技有限公司 | Array substrate of active component and production method thereof |
| CN102629048A (en) * | 2011-07-13 | 2012-08-08 | 京东方科技集团股份有限公司 | Liquid crystal display panel and driving method thereof |
| CN105739157A (en) * | 2016-05-04 | 2016-07-06 | 上海中航光电子有限公司 | Array base plate, manufacturing method of array base plate, and liquid crystal display device |
| CN105938840A (en) * | 2016-07-05 | 2016-09-14 | 深圳市华星光电技术有限公司 | Array substrate and display panel |
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Application publication date: 20100609 |