TWI404181B - Pixel array substrate and liquid crystal display - Google Patents

Pixel array substrate and liquid crystal display Download PDF

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TWI404181B
TWI404181B TW98113535A TW98113535A TWI404181B TW I404181 B TWI404181 B TW I404181B TW 98113535 A TW98113535 A TW 98113535A TW 98113535 A TW98113535 A TW 98113535A TW I404181 B TWI404181 B TW I404181B
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contact
insulating layer
layer
liquid crystal
array substrate
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TW98113535A
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TW201039419A (en
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Chih Yung Hsieh
Chien Hong Chen
ying ren Chen
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Innolux Corp
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Abstract

A pixel array substrate including at least one contact hole structure comprising a patterned metal layer, an insulating layer and a patterned semiconductor layer is provided. The patterned metal layer comprises at least one contact region, wherein the contact region has a first width w1 in a direction. The insulating layer is disposed on the patterned metal layer and has at least one contact hole exposing a portion of the contact region. An angle between a top surface and a bottom surface of the insulating layer is &thgr; , a thickness of the insulating layer is d, a width of the contact hole in mentioned direction is w2, and (3d/tan&thgr;+w2) ≤ w1 ≤ (6d/tan&thgr;+w2). The patterned semiconductor layer is disposed on the insulating layer and covered the contact hole to contact with the contact region of the patterned metal layer.

Description

畫素陣列基板及液晶顯示裝置Pixel array substrate and liquid crystal display device

本發明是有關於一種畫素陣列基板以及液晶顯示裝置,且特別是有關於一種具有接觸窗結構的畫素陣列基板以及具有上述畫素陣列基板的液晶顯示裝置。The present invention relates to a pixel array substrate and a liquid crystal display device, and more particularly to a pixel array substrate having a contact window structure and a liquid crystal display device having the above pixel array substrate.

在3C時代的生活中,市面上有琳瑯滿目的資訊設備,例如行動電話、數位相機、數位攝影機、筆記型電腦以及桌上型電腦等數位化工具,無不朝向更便利、多功能且美觀的方向發展。在大部分的資訊設備中,都是以平面顯示裝置作為主要的溝通介面,透過平面顯示裝置的顯示功能,使得使用者在產品的操作上更為便利。其中,液晶顯示裝置因具有省電、高畫質、空間利用效率佳、低消耗功率以及無輻射等優點,已成為市場之主流。In the 3C era of life, there are a variety of information devices on the market, such as mobile phones, digital cameras, digital cameras, notebook computers, and desktop computers, all of which are oriented toward more convenient, versatile and beautiful directions. development of. In most information devices, the flat display device is used as the main communication interface, and the display function of the flat display device makes the user's operation more convenient. Among them, the liquid crystal display device has become the mainstream of the market due to its advantages of power saving, high image quality, good space utilization efficiency, low power consumption, and no radiation.

一般而言,液晶顯示裝置包括畫素陣列基板、對向基板以及位於上述兩基板之間的液晶層。其中,畫素陣列基板包括依序堆疊於基板上的圖案化金屬層、保護層以及畫素電極層。在上述結構中,圖案化金屬層與畫素電極層之間可能會產生寄生電容,因而導致串音(crosstalk)現象並嚴重影響液晶顯示裝置的顯示品質。為了降低圖案化金屬層與畫素電極層之間的耦合電容值,習知的一種解決方法為在保護層以及畫素電極層之間加入一層具有低介電常數的絕緣層,以提升液晶顯示裝置的顯示品質。其中,在形成絕緣層以及保護層後,會移除部分絕緣層以及部分保護層,以形成接觸窗開口,使得畫素電極層與圖案化金屬層中的接觸區(例如汲極)電性連接。In general, a liquid crystal display device includes a pixel array substrate, a counter substrate, and a liquid crystal layer between the two substrates. The pixel array substrate includes a patterned metal layer, a protective layer, and a pixel electrode layer sequentially stacked on the substrate. In the above structure, a parasitic capacitance may be generated between the patterned metal layer and the pixel electrode layer, thereby causing a crosstalk phenomenon and seriously affecting the display quality of the liquid crystal display device. In order to reduce the coupling capacitance between the patterned metal layer and the pixel electrode layer, a conventional solution is to add an insulating layer having a low dielectric constant between the protective layer and the pixel electrode layer to enhance the liquid crystal display. The display quality of the device. Wherein, after the insulating layer and the protective layer are formed, a portion of the insulating layer and a portion of the protective layer are removed to form a contact opening, such that the pixel electrode layer is electrically connected to a contact region (eg, a drain) in the patterned metal layer. .

圖1為習知一種接觸窗結構的剖面示意圖。接觸窗結構100包括接觸區110、保護層120、絕緣層130以及畫素電極140。值得注意的是,絕緣層130通常具有數微米的厚度,因此絕緣層130的頂面130a與底面130b會在接觸窗開口130c的邊緣處夾有角度θ。如此一來,位於邊緣處的液晶分子(未繪示)之傾倒方向不符合理想狀態,且邊緣處下方沒有能夠阻擋光線的接觸區110,因而液晶顯示器會有暗態漏光的現象發生,這將導致液晶顯示裝置的對比值以及顯示品質下降。習知的解決方法是相當程度地增加接觸區110的尺寸,以藉由接觸區110阻擋接觸窗開口130c的邊緣處的漏光。然而,當尺寸過大的接觸區110位於可視區時,將導致液晶顯示裝置的開口率大幅下降。1 is a schematic cross-sectional view of a conventional contact window structure. The contact window structure 100 includes a contact region 110, a protective layer 120, an insulating layer 130, and a pixel electrode 140. It is to be noted that the insulating layer 130 generally has a thickness of several micrometers, and thus the top surface 130a and the bottom surface 130b of the insulating layer 130 may have an angle θ at the edge of the contact window opening 130c. In this way, the tilting direction of the liquid crystal molecules (not shown) located at the edge is not in an ideal state, and there is no contact region 110 under the edge to block the light, so that the liquid crystal display has a dark state light leakage phenomenon, which will This causes a contrast value of the liquid crystal display device and a deterioration in display quality. A conventional solution is to increase the size of the contact zone 110 to a considerable extent to block light leakage at the edges of the contact opening 130c by the contact zone 110. However, when the oversized contact region 110 is located in the visible region, the aperture ratio of the liquid crystal display device is drastically lowered.

本發明提供一種畫素陣列基板,其具有能夠降低暗態漏光現象的接觸窗結構,且具有高開口率。The present invention provides a pixel array substrate having a contact window structure capable of reducing a dark state light leakage phenomenon and having a high aperture ratio.

本發明另提供一種液晶顯示裝置,其具有能夠降低暗態漏光現象的接觸窗結構,且具有高開口率,故具有較佳的顯示品質。The present invention further provides a liquid crystal display device having a contact window structure capable of reducing a dark state light leakage phenomenon and having a high aperture ratio, thereby having a better display quality.

本發明提出一種畫素陣列基板,具有至少一接觸窗結構,其中接觸窗結構包括一圖案化金屬層、一絕緣層以及一圖案化導體層。圖案化金屬層具有至少一接觸區,其中接觸區在一方向具有一第一寬度w1。絕緣層配置於圖案化金屬層上,且具有暴露接觸區之部分區域的至少一接觸窗開口,絕緣層的一頂面與一底面在接觸窗開口的邊緣處的夾角為θ,絕緣層的厚度為d,其中接觸窗開口在前述方向具有一第二寬度w2,且(3d/tanθ+w2)≦w1≦(6d/tanθ+w2)。圖案化導體層配置於絕緣層上,並覆蓋接觸窗開口而接觸圖案化金屬層的接觸區。The invention provides a pixel array substrate having at least one contact window structure, wherein the contact window structure comprises a patterned metal layer, an insulating layer and a patterned conductor layer. The patterned metal layer has at least one contact region, wherein the contact region has a first width w1 in one direction. The insulating layer is disposed on the patterned metal layer and has at least one contact window opening exposing a partial region of the contact region, wherein an angle between a top surface and a bottom surface of the insulating layer at an edge of the contact window opening is θ, a thickness of the insulating layer Is d, wherein the contact opening has a second width w2 in the aforementioned direction, and (3d/tan θ + w2) ≦ w1 ≦ (6d / tan θ + w2). The patterned conductor layer is disposed on the insulating layer and covers the contact opening of the contact window to contact the patterned metal layer.

本發明又提出一種液晶顯示裝置,包括一畫素陣列基板、一對向基板以及配置於畫素陣列基板與對向基板之間的一液晶層。畫素陣列基板具有至少一接觸窗結構,其中接觸窗結構包括一圖案化金屬層、一絕緣層以及一圖案化導體層。圖案化金屬層具有至少一接觸區,其中接觸區在一方向具有一第一寬度w1。絕緣層配置於圖案化金屬層上,且具有暴露接觸區之部分區域的至少一接觸窗開口,絕緣層的一頂面與一底面在接觸窗開口的邊緣處的夾角為θ,絕緣層的厚度為d,其中接觸窗開口在前述方向具有一第二寬度w2,且(3d/tanθ+w2)≦w1≦(6d/tanθ+w2)。圖案化導體層配置於絕緣層上,並覆蓋接觸窗開口而接觸圖案化金屬層的接觸區。The present invention further provides a liquid crystal display device comprising a pixel array substrate, a pair of substrates, and a liquid crystal layer disposed between the pixel array substrate and the opposite substrate. The pixel array substrate has at least one contact window structure, wherein the contact window structure comprises a patterned metal layer, an insulating layer and a patterned conductor layer. The patterned metal layer has at least one contact region, wherein the contact region has a first width w1 in one direction. The insulating layer is disposed on the patterned metal layer and has at least one contact window opening exposing a partial region of the contact region, wherein an angle between a top surface and a bottom surface of the insulating layer at an edge of the contact window opening is θ, a thickness of the insulating layer Is d, wherein the contact opening has a second width w2 in the aforementioned direction, and (3d/tan θ + w2) ≦ w1 ≦ (6d / tan θ + w2). The patterned conductor layer is disposed on the insulating layer and covers the contact opening of the contact window to contact the patterned metal layer.

在本發明之一實施例中,上述之絕緣層的材質包括全氟烷基乙烯基醚共聚物(PerFluoroAlkoxyethylene,PFA)。In an embodiment of the invention, the material of the insulating layer comprises a perfluoroalkyl vinyl ether copolymer (PFA).

在本發明之一實施例中,上述之接觸區包括一汲極。In an embodiment of the invention, the contact zone comprises a drain.

在本發明之一實施例中,上述之圖案化導體層包括多個畫素電極。In an embodiment of the invention, the patterned conductor layer comprises a plurality of pixel electrodes.

在本發明之一實施例中,上述之接觸窗結構更包括一保護層,位於圖案化金屬層與絕緣層之間。In an embodiment of the invention, the contact window structure further includes a protective layer between the patterned metal layer and the insulating layer.

在本發明之一實施例中,上述之保護層的材質包括氮化矽。In an embodiment of the invention, the material of the protective layer comprises tantalum nitride.

在本發明之一實施例中,上述之絕緣層與圖案化金屬層之間於上述方向具有一平移誤差m,且(3d/tanθ+w2+2m)≦w1≦(6d/tanθ+w2+2m)。In an embodiment of the invention, the insulating layer and the patterned metal layer have a translation error m in the above direction, and (3d/tan θ + w2 + 2m) ≦ w1 ≦ (6d / tan θ + w2 + 2m).

在本發明之一實施例中,上述之平移誤差m小於或等於6微米。In one embodiment of the invention, the translational error m is less than or equal to 6 microns.

在本發明之一實施例中,上述之液晶顯示裝置更包括一背光模組,其中畫素陣列基板、對向基板與液晶層配置於背光模組上方。In an embodiment of the invention, the liquid crystal display device further includes a backlight module, wherein the pixel array substrate, the opposite substrate and the liquid crystal layer are disposed above the backlight module.

綜上所述,畫素陣列基板具有能夠降低暗態漏光現象的接觸窗結構,且此接觸窗結構可將對於畫素陣列基板的開口率之影響減至最小。因此,採用此種畫素陣列基板的液晶顯示裝置具有較佳的對比值以及顯示品質。In summary, the pixel array substrate has a contact window structure capable of reducing dark light leakage, and the contact window structure can minimize the influence on the aperture ratio of the pixel array substrate. Therefore, the liquid crystal display device using such a pixel array substrate has better contrast values and display quality.

為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.

圖2A是依照本發明一實施例所繪示之一種畫素陣列基板的局部上視示意圖。圖2B為沿圖2A的A-A’線的剖面示意圖。請同時參照圖2A與圖2B,本實施例僅繪示出畫素陣列基板200中的一個畫素區為代表作說明,實際上畫素陣列基板200應包括多個畫素區。畫素陣列基板200具有至少一接觸窗結構220,其中接觸窗結構220包括一圖案化金屬層222、一絕緣層224以及一圖案化導體層226。圖案化金屬層222具有至少一接觸區222a,其中接觸區222a在一方向D具有一第一寬度w1。絕緣層224配置於圖案化金屬層222上,且具有暴露接觸區222a之部分區域的至少一接觸窗開口224a。絕緣層224的一頂面224b與一底面224c在接觸窗開口224a的邊緣處的夾角為θ,絕緣層224的厚度為d,其中接觸窗開口224a在方向D具有一第二寬度w2,且(3d/tanθ+w2)≦w1≦(6d/tanθ+w2)。圖案化導體層226配置於絕緣層224上,並覆蓋接觸窗開口224a而接觸圖案化金屬層222。本實施例之圖案化導體層226是以構成通常稱為畫素電極的元件為例。2A is a partial top plan view of a pixel array substrate according to an embodiment of the invention. Fig. 2B is a schematic cross-sectional view taken along line A-A' of Fig. 2A. Referring to FIG. 2A and FIG. 2B simultaneously, the present embodiment only shows one pixel area in the pixel array substrate 200 as a representative. In fact, the pixel array substrate 200 should include a plurality of pixel areas. The pixel array substrate 200 has at least one contact window structure 220. The contact window structure 220 includes a patterned metal layer 222, an insulating layer 224, and a patterned conductor layer 226. The patterned metal layer 222 has at least one contact region 222a, wherein the contact region 222a has a first width w1 in a direction D. The insulating layer 224 is disposed on the patterned metal layer 222 and has at least one contact opening 224a exposing a partial region of the contact region 222a. The top surface 224b of the insulating layer 224 and the bottom surface 224c are at an angle θ at the edge of the contact opening 224a, and the thickness of the insulating layer 224 is d, wherein the contact opening 224a has a second width w2 in the direction D, and 3d/tan θ + w2) ≦ w1 ≦ (6d / tan θ + w2). The patterned conductor layer 226 is disposed on the insulating layer 224 and covers the contact opening 224a to contact the patterned metal layer 222. The patterned conductor layer 226 of this embodiment is exemplified by an element constituting a pixel electrode.

請繼續參照圖2A與圖2B,畫素陣列基板200包括多個陣列配置於基板202上並作為開關的主動元件212,在此僅繪示一個主動元件212。主動元件212包括堆疊於基板202上的閘極212g、閘絕緣層214、通道層212c以及源極212s與汲極212d。每一主動元件212連接與之對應的掃描配線SL以及資料配線DL。2A and 2B, the pixel array substrate 200 includes a plurality of arrays of active elements 212 disposed on the substrate 202 as switches, and only one active element 212 is shown. The active device 212 includes a gate 212g stacked on the substrate 202, a gate insulating layer 214, a channel layer 212c, and a source 212s and a drain 212d. Each active element 212 is connected to a scan wiring SL and a data wiring DL corresponding thereto.

在本實施例中,圖案化金屬層222包括資料配線DL以及源極212s與汲極212d。接觸區222a例如是汲極。在另一實施例中,圖案化金屬層包括閘極以及掃描配線。因此,接觸區並不限定是汲極。In the present embodiment, the patterned metal layer 222 includes a data wiring DL and a source 212s and a drain 212d. Contact area 222a is, for example, a drain. In another embodiment, the patterned metal layer includes a gate and a scan line. Therefore, the contact area is not limited to being a bungee.

請繼續參照圖2A與圖2B,在本實施例中,絕緣層224配置於圖案化金屬層222上,且具有暴露汲極212d之部分區域的接觸窗開口224a。絕緣層224的材質例如是全氟烷基乙烯基醚共聚物(PerFluoroAlkoxyethylene,PFA)。為了降低圖案化導體層226以及圖案化金屬層222之間的耦合電容,絕緣層224的厚度d例如是3微米。故,絕緣層224的頂面224b與底面224c在接觸窗開口224a的邊緣處會夾有夾角θ,例如是39°。2A and 2B, in the present embodiment, the insulating layer 224 is disposed on the patterned metal layer 222 and has a contact opening 224a exposing a partial region of the drain 212d. The material of the insulating layer 224 is, for example, PerFluoro Alkoxyethylene (PFA). In order to reduce the coupling capacitance between the patterned conductor layer 226 and the patterned metal layer 222, the thickness d of the insulating layer 224 is, for example, 3 micrometers. Therefore, the top surface 224b and the bottom surface 224c of the insulating layer 224 may have an included angle θ at the edge of the contact window opening 224a, for example, 39°.

在本實施例中,接觸窗結構220更包括保護層223,位於圖案化金屬層222與絕緣層224之間。保護層223的材質例如是氮化矽。換句話說,接觸窗結構220包括依序堆疊的圖案化金屬層222、保護層223、絕緣層224以及圖案化導體層226。再者,在另一實施例中,接觸窗結構更包括閘絕緣層,配置於圖案化金屬層與絕緣層之間。In the present embodiment, the contact window structure 220 further includes a protective layer 223 between the patterned metal layer 222 and the insulating layer 224. The material of the protective layer 223 is, for example, tantalum nitride. In other words, the contact window structure 220 includes the patterned metal layer 222, the protective layer 223, the insulating layer 224, and the patterned conductor layer 226 which are sequentially stacked. Moreover, in another embodiment, the contact window structure further includes a gate insulating layer disposed between the patterned metal layer and the insulating layer.

請繼續參照圖2A與圖2B,在本實施例中,圖案化導體層226構成多個畫素電極,在此僅繪示一個畫素電極。圖案化導體層226配置於絕緣層224上,並填滿接觸窗開口224a而與汲極212d電性連接。圖案化導體層226的材料可以是銦錫氧化物(ITO)、銦鋅氧化物(IZO)、鋅鋁氧化物(AZO)或是其他透明導體材質。2A and 2B, in the present embodiment, the patterned conductor layer 226 constitutes a plurality of pixel electrodes, and only one pixel electrode is shown here. The patterned conductor layer 226 is disposed on the insulating layer 224 and fills the contact opening 224a to be electrically connected to the drain 212d. The material of the patterned conductor layer 226 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc aluminum oxide (AZO) or other transparent conductor material.

請繼續參照圖2A與圖2B,在本實施例中,接觸區222a在方向D的第一寬度w1例如是介於26.1微米以及37.2微米的範圍之間。絕緣層224的厚度d例如是3微米,絕緣層224的頂面224b與底面224c在接觸窗開口224a的邊緣處的夾角θ例如是39°。接觸窗開口224a在方向D的第二寬度w2例如是15微米。其中,(3d/tanθ+w2)≦w1≦(6d/tanθ+w2)。2A and 2B, in the present embodiment, the first width w1 of the contact region 222a in the direction D is, for example, between the range of 26.1 micrometers and 37.2 micrometers. The thickness d of the insulating layer 224 is, for example, 3 μm, and the angle θ between the top surface 224b and the bottom surface 224c of the insulating layer 224 at the edge of the contact opening 224a is, for example, 39°. The second width w2 of the contact window opening 224a in the direction D is, for example, 15 microns. Among them, (3d/tan θ + w2) ≦ w1 ≦ (6d / tan θ + w2).

值得一提的是,在製作接觸窗結構220的製程中,主要的製程參數為絕緣層224的厚度d以及其頂面224b與底面224c在接觸窗開口224a的邊緣處的夾角θ。因此,在決定接觸窗開口224a的第二寬度w2後,可根據(3d/tanθ+w2)≦w1≦(6d/tanθ+w2),設計出具有適當尺寸(即第一寬度w1)的接觸區222a。如此一來,可以有效地降低因接觸區222a尺寸過小所導致的暗態漏光現象,同時避免因接觸區222a尺寸過大所造成的畫素開口率損失的問題。It is worth mentioning that in the process of fabricating the contact window structure 220, the main process parameters are the thickness d of the insulating layer 224 and the angle θ between the top surface 224b and the bottom surface 224c at the edge of the contact window opening 224a. Therefore, after determining the second width w2 of the contact window opening 224a, a contact region having an appropriate size (ie, the first width w1) can be designed according to (3d/tan θ + w2) ≦ w1 ≦ (6d / tan θ + w2) 222a. In this way, the dark state light leakage caused by the small size of the contact region 222a can be effectively reduced, and the problem of the pixel aperture loss caused by the excessive size of the contact region 222a can be avoided.

實務上,在製作接觸窗結構220的製程中,絕緣層224與圖案化金屬層222之間,於水平方向上可能具有平移誤差,而此平移誤差在方向D上的分量為m(未繪示)。此時,(3d/tanθ+w2+2m)≦w1≦(6d/tanθ+w2+2m)。在一實施例中,平移誤差m小於或等於6微米。In practice, in the process of fabricating the contact window structure 220, between the insulating layer 224 and the patterned metal layer 222, there may be a translation error in the horizontal direction, and the component of the translation error in the direction D is m (not shown). ). At this time, (3d/tan θ + w 2+ 2 m) ≦ w1 ≦ (6d / tan θ + w 2+ 2 m). In an embodiment, the translation error m is less than or equal to 6 microns.

圖3是依照本發明另一實施例所繪示之一種畫素陣列基板的局部上視示意圖。請參照圖3,本發明並未限定圖案化導體層226中畫素電極的數量。因此,在畫素陣列基板200’中,圖案化導體層226可以包括第一畫素電極226a以及第二畫素電極226b,其中第一畫素電極226a大致包圍第二畫素電極226b且與第二畫素電極226b分離。3 is a partial top plan view of a pixel array substrate according to another embodiment of the invention. Referring to FIG. 3, the present invention does not limit the number of pixel electrodes in the patterned conductor layer 226. Therefore, in the pixel array substrate 200', the patterned conductor layer 226 may include a first pixel electrode 226a and a second pixel electrode 226b, wherein the first pixel electrode 226a substantially surrounds the second pixel electrode 226b and The two pixel electrodes 226b are separated.

圖4是依照本發明再一實施例所繪示之一種液晶顯示裝置的剖面示意圖。請參照圖4,此液晶顯示裝置300包括畫素陣列基板310、對向基板320以及配置於畫素陣列基板310與對向基板320之間的液晶層330。畫素陣列基板310可以採用如圖2A或圖3所繪示的畫素陣列基板200、200’其中之一,類似的結構在此不予以重述。再者,畫素陣列基板310上還可配置有多個彩色濾光膜(未繪示)。或者,彩色濾光膜可配置於對向基板320上。另外,若液晶顯示裝置300採用穿透式或半穿透半反射式設計,則可更包括一背光模組340以提供面光源。畫素陣列基板310、對向基板320與液晶層330配置於背光模組340上方,以使用背光模組340所提供之光線而進行顯示。4 is a cross-sectional view showing a liquid crystal display device according to still another embodiment of the present invention. Referring to FIG. 4 , the liquid crystal display device 300 includes a pixel array substrate 310 , an opposite substrate 320 , and a liquid crystal layer 330 disposed between the pixel array substrate 310 and the opposite substrate 320 . The pixel array substrate 310 may be one of the pixel array substrates 200, 200' as illustrated in FIG. 2A or FIG. 3, and similar structures are not repeated herein. Furthermore, a plurality of color filter films (not shown) may be disposed on the pixel array substrate 310. Alternatively, the color filter film may be disposed on the opposite substrate 320. In addition, if the liquid crystal display device 300 adopts a transmissive or transflective design, a backlight module 340 may be further included to provide a surface light source. The pixel array substrate 310, the opposite substrate 320, and the liquid crystal layer 330 are disposed above the backlight module 340, and are displayed by using the light provided by the backlight module 340.

在本實施例中,畫素陣列基板310的結構與畫素陣列基板200的結構相似。請同時參照圖2B與圖4,由於絕緣層224的頂面224b與底面224c在接觸窗開口224a的邊緣處夾有夾角θ。因此,位於接觸窗開口224a附近的液晶分子會隨著邊緣處的輪廓而傾倒,使得液晶分子的傾倒方向不符合理想狀態,造成液晶顯示裝置300可能會有暗態漏光的現象發生。然而,在本實施例中,接觸區222a能夠阻擋來自於背光模組340的光線。因此,能降低上述暗態漏光的現象,此外,由於接觸區222a的大小是經過設計的,因此,不會大幅影響畫素陣列基板310的開口率,故能提升液晶顯示裝置300的對比值以及顯示品質。In the present embodiment, the structure of the pixel array substrate 310 is similar to that of the pixel array substrate 200. Referring to FIG. 2B and FIG. 4 simultaneously, since the top surface 224b and the bottom surface 224c of the insulating layer 224 have an included angle θ at the edge of the contact window opening 224a. Therefore, the liquid crystal molecules located in the vicinity of the contact opening 224a may be tilted with the contour at the edge, so that the tilting direction of the liquid crystal molecules does not conform to the ideal state, causing the liquid crystal display device 300 to have a dark state light leakage phenomenon. However, in the present embodiment, the contact region 222a can block light from the backlight module 340. Therefore, the phenomenon of the dark state light leakage can be reduced. Further, since the size of the contact region 222a is designed, the aperture ratio of the pixel array substrate 310 is not greatly affected, so that the contrast value of the liquid crystal display device 300 can be improved. Display quality.

綜上所述,採用本發明之畫素陣列基板的液晶顯示裝置,能夠在不大幅影響畫素開口率的前提下,改善習知因接觸窗結構所造成的暗態漏光現象,故能提升液晶顯示裝置的對比值以及顯示品質。此外,本發明之畫素陣列基板與液晶顯示裝置的製作方法與現有製程相容,不會造成生產成本的大幅上升。更甚之,由於能夠估算出接觸區的適當尺寸,故能有效地節省生產成本,以提升製程產能。In summary, the liquid crystal display device using the pixel array substrate of the present invention can improve the dark light leakage caused by the contact window structure without significantly affecting the aperture ratio of the pixel, thereby improving the liquid crystal. The contrast value of the display device and the display quality. Further, the pixel array substrate of the present invention and the method of fabricating the liquid crystal display device are compatible with the existing processes, and do not cause a substantial increase in production cost. Moreover, since the appropriate size of the contact area can be estimated, the production cost can be effectively saved to increase the process capacity.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100...接觸窗結構100. . . Contact window structure

110...接觸區110. . . Contact area

120...保護層120. . . The protective layer

130...絕緣層130. . . Insulation

130a...頂面130a. . . Top surface

130b...底面130b. . . Bottom

130c...接觸窗開口130c. . . Contact window opening

140...畫素電極140. . . Pixel electrode

200、200’、300...畫素陣列基板200, 200', 300. . . Pixel array substrate

202...基板202. . . Substrate

212...主動元件212. . . Active component

212c...通道層212c. . . Channel layer

212d...汲極212d. . . Bungee

212g...閘極212g. . . Gate

212s...源極212s. . . Source

214...閘絕緣層214. . . Brake insulation

220...接觸窗結構220. . . Contact window structure

222...圖案化金屬層222. . . Patterned metal layer

222a...接觸區222a. . . Contact area

223...保護層223. . . The protective layer

224...絕緣層224. . . Insulation

224a...接觸窗開口224a. . . Contact window opening

224b...頂面224b. . . Top surface

224c...底面224c. . . Bottom

226...圖案化導體層226. . . Patterned conductor layer

226a、226b...畫素電極226a, 226b. . . Pixel electrode

300...液晶顯示裝置300. . . Liquid crystal display device

320...對向基板320. . . Counter substrate

330...液晶層330. . . Liquid crystal layer

340...背光模組340. . . Backlight module

d...厚度d. . . thickness

θ...夾角θ. . . Angle

w1...第一寬度W1. . . First width

w2...第二寬度W2. . . Second width

D...方向D. . . direction

DL...資料配線DL. . . Data wiring

SL...掃描配線SL. . . Scanning wiring

圖1為習知一種接觸窗結構的剖面示意圖。1 is a schematic cross-sectional view of a conventional contact window structure.

圖2A是依照本發明一實施例所繪示之一種畫素陣列基板的局部上視示意圖。2A is a partial top plan view of a pixel array substrate according to an embodiment of the invention.

圖2B為沿圖2A的A-A’線的剖面示意圖。Fig. 2B is a schematic cross-sectional view taken along line A-A' of Fig. 2A.

圖3是依照本發明另一實施例所繪示之一種畫素陣列基板的局部上視示意圖。3 is a partial top plan view of a pixel array substrate according to another embodiment of the invention.

圖4是依照本發明再一實施例所繪示之一種液晶顯示裝置的剖面示意圖。4 is a cross-sectional view showing a liquid crystal display device according to still another embodiment of the present invention.

200...畫素陣列基板200. . . Pixel array substrate

202...基板202. . . Substrate

212d...汲極212d. . . Bungee

214...閘絕緣層214. . . Brake insulation

220...接觸窗結構220. . . Contact window structure

222...圖案化金屬層222. . . Patterned metal layer

222a...接觸區222a. . . Contact area

223...保護層223. . . The protective layer

224...絕緣層224. . . Insulation

224a...接觸窗開口224a. . . Contact window opening

224b...頂面224b. . . Top surface

224c...底面224c. . . Bottom

226...畫素電極層226. . . Pixel electrode layer

d...厚度d. . . thickness

θ...夾角θ. . . Angle

w1...第一寬度W1. . . First width

w2...第二寬度W2. . . Second width

D...方向D. . . direction

Claims (17)

一種畫素陣列基板,具有至少一接觸窗結構,其中該接觸窗結構包括:一圖案化金屬層,具有至少一接觸區,其中該接觸區在一方向具有一第一寬度w1;一絕緣層,配置於該圖案化金屬層上,且具有暴露該接觸區之部分區域的至少一接觸窗開口,該絕緣層的一頂面與一底面在該接觸窗開口的邊緣處的夾角為θ,該絕緣層的厚度為d,其中該接觸窗開口在該方向具有一第二寬度w2,且(3d/tanθ+w2)≦w1≦(6d/tanθ+w2);以及一圖案化導體層,配置於該絕緣層上,並覆蓋該接觸窗開口而接觸該接觸區。A pixel array substrate having at least one contact window structure, wherein the contact window structure comprises: a patterned metal layer having at least one contact region, wherein the contact region has a first width w1 in one direction; an insulating layer, Arranging on the patterned metal layer and having at least one contact window opening exposing a partial region of the contact region, an angle between a top surface and a bottom surface of the insulating layer at an edge of the contact window opening is θ, the insulation The thickness of the layer is d, wherein the contact opening has a second width w2 in the direction, and (3d/tan θ + w2) ≦ w1 ≦ (6d / tan θ + w2); and a patterned conductor layer disposed thereon And contacting the contact opening on the insulating layer to contact the contact area. 如申請專利範圍第1項所述之畫素陣列基板,其中該絕緣層的材質包括全氟烷基乙烯基醚共聚物。The pixel array substrate of claim 1, wherein the material of the insulating layer comprises a perfluoroalkyl vinyl ether copolymer. 如申請專利範圍第1項所述之畫素陣列基板,其中該接觸區包括一汲極。The pixel array substrate of claim 1, wherein the contact region comprises a drain. 如申請專利範圍第1項所述之畫素陣列基板,其中該圖案化導體層包括多個畫素電極。The pixel array substrate of claim 1, wherein the patterned conductor layer comprises a plurality of pixel electrodes. 如申請專利範圍第1項所述之畫素陣列基板,其中該接觸窗結構更包括一保護層,位於該圖案化金屬層與該絕緣層之間。The pixel array substrate of claim 1, wherein the contact window structure further comprises a protective layer between the patterned metal layer and the insulating layer. 如申請專利範圍第5項所述之畫素陣列基板,其中該保護層的材質包括氮化矽。The pixel array substrate of claim 5, wherein the material of the protective layer comprises tantalum nitride. 如申請專利範圍第1項所述之畫素陣列基板,其中該絕緣層與該圖案化金屬層之間於該方向具有一平移誤差m,且(3d/tanθ+w2+2m)≦w1≦(6d/tanθ+w2+2m)。The pixel array substrate of claim 1, wherein the insulating layer and the patterned metal layer have a translation error m in the direction, and (3d/tan θ+w2+2m) ≦w1 ≦ (6d/tan θ+w2+2m) . 如申請專利範圍第7項所述之畫素陣列基板,其中該平移誤差m小於或等於6微米。The pixel array substrate of claim 7, wherein the translation error m is less than or equal to 6 micrometers. 一種液晶顯示裝置,包括:一畫素陣列基板,具有至少一接觸窗結構,其中該接觸窗結構包括:一圖案化金屬層,具有至少一接觸區,其中該接觸區在一方向具有一第一寬度w1;一絕緣層,配置於該圖案化金屬層上,且具有暴露該接觸區之部分區域的至少一接觸窗開口,該絕緣層的一頂面與一底面在該接觸窗開口的邊緣處的夾角為θ,該絕緣層的厚度為d,其中該接觸窗開口在該方向具有一第二寬度w2,且(3d/tanθ+w2)≦w1≦(6d/tanθ+w2);一圖案化導體層,配置於該絕緣層上,並覆蓋該接觸窗開口而接觸該圖案化金屬層;一對向基板;以及一液晶層,配置於該畫素陣列基板與該對向基板之間。A liquid crystal display device comprising: a pixel array substrate having at least one contact window structure, wherein the contact window structure comprises: a patterned metal layer having at least one contact region, wherein the contact region has a first direction in a direction a width w1; an insulating layer disposed on the patterned metal layer and having at least one contact opening exposing a portion of the contact region, a top surface and a bottom surface of the insulating layer being at an edge of the contact opening The angle of the insulating layer is θ, and the thickness of the insulating layer is d, wherein the contact opening has a second width w2 in the direction, and (3d/tan θ + w2) ≦ w1 ≦ (6d / tan θ + w2); a conductor layer disposed on the insulating layer and covering the contact opening to contact the patterned metal layer; a pair of substrates; and a liquid crystal layer disposed between the pixel array substrate and the opposite substrate. 如申請專利範圍第9項所述之液晶顯示裝置,其中該絕緣層的材質包括全氟烷基乙烯基醚共聚物。The liquid crystal display device of claim 9, wherein the material of the insulating layer comprises a perfluoroalkyl vinyl ether copolymer. 如申請專利範圍第9項所述之液晶顯示裝置,其中該接觸區包括一汲極。The liquid crystal display device of claim 9, wherein the contact region comprises a drain. 如申請專利範圍第9項所述之液晶顯示裝置,其中該圖案化導體層包括多個畫素電極。The liquid crystal display device of claim 9, wherein the patterned conductor layer comprises a plurality of pixel electrodes. 如申請專利範圍第9項所述之液晶顯示裝置,其中該接觸窗結構更包括一保護層,位於該圖案化金屬層與該絕緣層之間。The liquid crystal display device of claim 9, wherein the contact window structure further comprises a protective layer between the patterned metal layer and the insulating layer. 如申請專利範圍第13項所述之液晶顯示裝置,其中該保護層的材質包括氮化矽。The liquid crystal display device of claim 13, wherein the material of the protective layer comprises tantalum nitride. 如申請專利範圍第9項所述之液晶顯示裝置,其中該絕緣層與該圖案化金屬層之間於該方向具有一平移誤差m,且(3d/tanθ+w2+2m)≦w1≦(6d/tanθ+w2+2m)。The liquid crystal display device of claim 9, wherein the insulating layer and the patterned metal layer have a translation error m in the direction, and (3d/tan θ + w2 + 2m) ≦ w1 ≦ (6d / tan θ + w2 + 2m). 如申請專利範圍第15項所述之液晶顯示裝置,其中該平移誤差m小於或等於6微米。The liquid crystal display device of claim 15, wherein the translation error m is less than or equal to 6 micrometers. 如申請專利範圍第9項所述之液晶顯示裝置,更包括一背光模組,其中該畫素陣列基板、該對向基板與該液晶層配置於該背光模組上方。The liquid crystal display device of claim 9, further comprising a backlight module, wherein the pixel array substrate, the opposite substrate and the liquid crystal layer are disposed above the backlight module.
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