18276twf.doc/r 九、發明說明： 【發明所屬之技術領域】 β本發明是有關於-種晝素結構及其修補方法，且特別 是有關於-_於液晶齡器㈣素結構及其修補方法。 【先前技術】 自從第一台以陰極射線管(Cathode Ray Tube，CRT) 為工作板式的黑白電視機發明以來，縣技術便以飛快的 速度不斷錢。然而，由於赠極縣管製造的顯示器具 有體積大、重量重、輻射量高及錢較差等缺點，因此新 的平面顯不技術便不斷被開發出。在這些平面顯示技術 =，又以具有輕薄短小、省電、低輻射、全彩及方便攜帶 等優點的液晶顯示器（Liquid Crystal Display，LCD)技術最 為純热且普及化。舉凡手機、數位相機、數位攝影機、個 人數位助理(PDA)、筆記型電腦、液晶電視等都有其應用 範圍。 雖然液晶顯示器技術已趨成熟，但液晶顯示面板在製 k過&之中難免會產生一些瑕疲(defect)，而這些瑕疫在液 晶顯不器顯示時會造成影像品質下降。然而，若直接報廢 丟棄這些有瑕疵的液晶顯示面板，將會使得製造成本大幅 增加。一般來說’只依賴改善製程技術來實現零瑕疵率是 非常困難的’因此液晶顯示面板的瑕疵修補技術變得相當 的重要。在習知技術中’液晶顯示面板的瑕疵修補通常採 用雷射熔接(laser welding)或雷射切割(laser cutting)等方式 進行。以薄膜電晶體液晶顯示器(thin film transistor liquid 1323868 18276twf.doc/r crystal display，TFT-LCD)為例，雷射熔接或切割的動作通 常是在薄膜電晶體陣列(TFT array)製作完成後進行。然而 由於晝素結構没计的緣故，並非每一種瑕疵^都能快速修 復，甚至有些瑕疵無法修復。 圖1A繪示一種習知薄膜電晶體陣列基板之上視圖， 而圖1B繪示沿圖1A之A-A’線之剖面圖。請同時參照圖 1A與圖1B，習知的薄膜電晶體陣列基板1〇〇包括一基板 110、多條掃描線120、多條資料線13〇以及多個晝素結構 140。其中’掃描線120、資料線13〇以及晝素結構14〇皆 配置於基板110上。 晝素結構140與對應的掃描線120及資料線130 電性連接，且每一晝素結構14〇包括一薄膜電晶體 142以及一透明電極144。其中，薄膜電晶體142包 括一閘極142a、一非晶石夕通道層142b、一源極142c 以及一汲極142d。閘極142a與掃描線120連接，且閘 極142a與掃描線12〇為第一金屬層。此外，源極142c與 資料線130連接，且資料線130、源極142c以及汲極M2d 為第一金屬層。另外，透明電極144與没極i42d電性連 接。 在薄膜電晶體基板100與彩色濾光片（未繪示）組立並 注入液晶（未繪示）之後，液晶顯示面板(未繪示）便可被形 成Λ、:而’ ¥上述的薄膜電晶體基板1 〇〇中的薄膜電晶體 142舍生故ρ早時’晝素結構14〇便無法正常運作。以常態 白晝面之顯示模式(normally white)的液晶顯示面板為例， 6 1323868 18276twf.doc/r18276twf.doc/r IX. Description of the invention: [Technical field to which the invention pertains] β The present invention relates to a structure of a species of alizarin and a method for repairing the same, and in particular to a structure of the liquid crystal age (four) and its repair method. [Prior Art] Since the invention of the first black-and-white television set using a cathode ray tube (CRT) as a working plate type, the county technology has been continually making money at a rapid rate. However, due to the large size, heavy weight, high radiation, and poor money of the display devices manufactured by the gifted county tube, new flat display technology has been continuously developed. In these flat display technologies, liquid crystal display (LCD) technology, which is light, short, power-saving, low-radiation, full-color, and easy to carry, is the most pure and popular. Mobile phones, digital cameras, digital cameras, PDAs, notebook computers, and LCD TVs all have their applications. Although the liquid crystal display technology has matured, the liquid crystal display panel will inevitably produce some defects in the process of manufacturing, and these plagues will cause image quality degradation when displayed in the liquid crystal display. However, if these defective liquid crystal display panels are discarded directly, the manufacturing cost will be greatly increased. In general, it is very difficult to rely solely on improved process technology to achieve zero defect rate. Therefore, the repair technology of liquid crystal display panels has become quite important. In the prior art, the repair of the liquid crystal display panel is usually carried out by means of laser welding or laser cutting. Taking a thin film transistor liquid 1323868 18276 twf. doc/r crystal display (TFT-LCD) as an example, the laser welding or cutting operation is usually performed after the fabrication of the TFT array. However, due to the fact that the structure of the alizarin is not counted, not every kind of 瑕疵^ can be repaired quickly, and even some cockroaches cannot be repaired. 1A is a top view of a conventional thin film transistor array substrate, and FIG. 1B is a cross-sectional view taken along line A-A' of FIG. 1A. Referring to FIG. 1A and FIG. 1B simultaneously, the conventional thin film transistor array substrate 1 includes a substrate 110, a plurality of scan lines 120, a plurality of data lines 13A, and a plurality of halogen structures 140. The scanning line 120, the data line 13〇, and the halogen structure 14 are all disposed on the substrate 110. The pixel structure 140 is electrically connected to the corresponding scan line 120 and the data line 130, and each of the pixel structures 14A includes a thin film transistor 142 and a transparent electrode 144. The thin film transistor 142 includes a gate 142a, an amorphous channel layer 142b, a source 142c, and a drain 142d. The gate 142a is connected to the scan line 120, and the gate 142a and the scan line 12 are the first metal layer. Further, the source 142c is connected to the data line 130, and the data line 130, the source 142c, and the drain M2d are the first metal layers. Further, the transparent electrode 144 is electrically connected to the electrodeless electrode i42d. After the thin film transistor substrate 100 and the color filter (not shown) are assembled and injected with liquid crystals (not shown), the liquid crystal display panel (not shown) can be formed into a thin film transistor. The thin film transistor 142 in the substrate 1 is rounded off, so that the 昼 structure 12 is not working properly. Take the normal white liquid crystal display panel as an example, 6 1323868 18276twf.doc/r
當此液晶顯示面板顯示黑晝面時，此無法正常運作的書素 結構140會在液晶顯示面板上形成一亮點》為了避免造成 在液晶顯示面板上形成亮點’必須藉由雷射修補製程將此 亮點修成暗點。習知的雷射修補是利用雷射將汲極142d 與閘極142a熔接在一起，使透明電極144永遠被施加一閘 極低電壓(gate low voltage，Vgl)。如此修補過的晝素結構 140將形成液晶顯示面板上的暗點。 然而 §液a日顯不面板顯示某些晝面時，例如全白書When the liquid crystal display panel displays a black surface, the non-normally functioning pixel structure 140 forms a bright spot on the liquid crystal display panel. In order to avoid forming a bright spot on the liquid crystal display panel, it is necessary to use a laser repair process. Highlights are made into dark spots. Conventional laser repair uses a laser to fuse the drain 142d with the gate 142a such that the transparent electrode 144 is permanently applied with a gate low voltage (Vgl). The thus modified halogen structure 140 will form a dark spot on the liquid crystal display panel. However, when the liquid a day is not displayed on the panel, for example, all the white books
面％，被修補過的晝素結構140依然形成液晶顯示面板上 ，暗2而k成顯示晝面的缺陷。此外，為了增加液晶顯 示面板的視角，通常還會在液晶顯示面板上配置一補償 膜。此補償臈將導致修補過的晝素結構140形成液晶顯示 面板上的一微亮點，進而降低了顯示晝面的品質。 【發明内容】 、 面之，本發_目的是提供—種能提升顯示晝 面之扣質的畫素結構。In the face %, the repaired alizarin structure 140 still forms a defect on the liquid crystal display panel, which is dark 2 and k. Further, in order to increase the viewing angle of the liquid crystal display panel, a compensation film is usually disposed on the liquid crystal display panel. This compensation 臈 will cause the repaired ruthenium structure 140 to form a slightly bright spot on the liquid crystal display panel, thereby reducing the quality of the display enamel. SUMMARY OF THE INVENTION In view of the above, the present invention is to provide a pixel structure capable of improving the buckle quality of the display surface.
法，—目的是提供—種畫素結構的修補方 法，以快迷修補有瑕疵的晝素結構。 構，f以構:二其:目：，本發明提出-種晝素結 主； —系、·、σ構包括一主動元件、一俘遽屏以；&一蚩 素祕。主動元件配置 二 性相連。保護層覆蓋掃描線、資料；及貝科線電 護層具有-第-開孔，r 抖線及主動凡件，且保 而弟一開孔暴露部份資料線。畫素 7 18276twf.d〇c/r 電極則魅動元件電性連接。 件 依照本發明1施例，第-開孔更暴露部份主動元 極 依照本發明1施例，第1孔更暴露部份畫素電 依“本發明_實施例，保 第二開孔暴露部份主 有一第—開孔，此 孔中。 動凡件且晝素電極部份填入第二開 依知、本發明_實施例，保護層 弟二開孔暴露部份晝素電極。/、有弟-開孔’此 祕= 本發明—實施例，晝素結構更包括—修補電極， 雷性層 且部份填人第-開孔中以 外，修補電=素==素一^ 寬度titr實施例，第—開孔至少暴露出資料線之 ，照本發明—實施例，主動元件包括薄膜電晶體。 本發明另提出-種晝素結構的修補方法，適於修補上 T任項之畫素結構，此晝素結構的修補方法包括在資料 與畫素電極上形成一導體層，且資料線藉由導體層 與畫素電極電性連接。 依照本發明-實施例’形成導體層的方法包括雷射化 學軋相沈積法。 基於上述’在本發明的畫素結構中，由於保護層具有 1323868 . 18276twf.doc/r 至少一開孔，其暴露出部分資料線。當主動元件無法正常 作用時，可在開口上方形成一導體層，以電性連^資料線 與晝素電極。此修補後的畫素結構在液晶顯示面板二配常 態白畫面之顯示模式並顯示黑晝面時會形成一暗點。在液 晶顯示面板搭配常態白畫面之顯示模式，且資料線未施加 」訊號時，此修補過畫素結構變會形成一亮點，避免造成全 .白畫面的缺陷。此外，利用本發明之晝素結構的修補方法， ，可快速修補有瑕疵的晝素結構，進而可提高液晶顯示面板 .的零輝點率(zero bright point ratio)，.降低液晶顯示面板的 生產成本。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易it，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 ίιιΛΜΜ 圖2Α繪示本發明第一實施例之晝素結構的結構示意 ®而圖2Β繪示沿圖2Α之Β>Β，線的剖面圖。請同時參 照，2Α與圖2Β，晝素結構200是製作於一基板110上， 且藉由基板110上的一掃描線與一資料線130驅動。 此:素結構2〇〇包括一主動元件21〇、一保護層22〇以及 一 ^素電極230。其中，主動元件21〇配置於基板11〇上， 且與=，線120以及資料線13〇電性相連。此外，保護層 设盍掃描線12〇、資料線13〇以及主動元件21〇，且保 :層220具有一第一開孔22〇a，其暴露了部份的資料線 9 18276twf.doc/r 130。畫素電極230則與主動元件210電性相連。 承上述，基板11〇例如為玻璃基板、石英基板或是其 他適當材料之基板。掃描線120例如為鋁合金導線或是其 他適當導體材料所形成的導線。資料線13〇則可為鉻金屬 導線、鋁合金導線或是其他適當導體材料所形成的導線。 主動元件210例如為一薄膜電晶體或是其他具有三端子的 開關元件(tri-polar switching device)。保護層220之材質例 如為氮化矽(silicon nitride)或是其他適當之材質。晝素電極 230例如是一透明電極(tranSparent eiectr〇de)、反射電極 (reflective electrode)或是半穿透半反射電極(tmnsflective electrode) ’而晝素電極230的材質可為銦錫氧化物(indium tin oxide, IT0)、銦鋅氧化物(indium zjnc 〇xjde，ιζο)、金屬 或是其他透明或不透明之導電材料。 更詳細而言’在本實施例中，主動元件210為一薄膜 電晶體。此主動元件210包括一閘極210a、一非晶矽 通道層210b、一源極21〇c以及一汲極210d。其中， 閘極210a與掃描線120連接，且閘極2i〇a與掃描線120 為第一金屬層。此外，源極21〇e與資料線130連接，且 資料線130、源極21〇c以及汲極21〇d為第二金屬層。 此外，在本實施例中’保護層22〇的第一開口 22〇a 暴露了部分資料線130，而第一開口 220a較佳是暴露出資 料線130之九^度的三分之一以上。此外，第一開口 220a 也同時暴露出部份的主動元件210 (例如是部份汲極 210d)。另外’如圖2B所示，晝素電極230配置於保 18276twf.d〇c/r 遭層220之上，且部份填入第一開口 22〇a中，以與主動 =件210的汲極21〇d電性連接。值得注意的是，晝素 ^極220並未與資料線13〇相連。再者，本實施例之 晝素電極230雖配置於保護層220之上，然而晝素電極23〇 也可配置於保護層220之下。 上述之畫素結構2 0 〇可應用於製作成一液晶顯示面板 (未、會示）。然而，在液晶顯示面板的製造過程中，若晝素 、'’《構200產生某些缺陷而無法正常運作，則此畫素結構2⑻ 會在搭配常態白晝面顯示模式(n〇rmally white)之液晶顯示 面板時將形成一亮點。此時’可以對有瑕疵的晝素結構2〇〇 進行修補，使修補過後的晝素結構2〇〇在此液晶顯示面板 上形成一暗點。有關於此晝素結構2〇〇的修補方法將詳述 如後。 圖2C繪示圖2A之晝素結構的修補方法示意圖，而圖 2D繪示沿圖2C之C-C’線的剖面圖。請同時參照圖2C與 圖2D，畫素結構200的修補方法是在部份資料線Go上 方、部份汲極2KM之上與部份晝素電極230之上形成一導 體層240。在導體層240形成之後，資料線13〇即藉由此 導體層240與晝素電極230電性連接。此外，形成導體層 240的方法例如雷射化學氣相沈積法(1狀打vap〇r deposition，laser CVD)或是其他適當的方法。以雷射化學氣 相沈積法為例，沈積導體層240的方法是利用紫外線雷射 (ultraviolet laser, UV laser)%、射六幾基化鶴氣體（tungSten hexacarbony丨，W(C0)6)，以便在晝素結構2〇〇上形成由鎢 1323868 1 S276twf.doc/r 金屬所構成之導體層240，其化學反應式如下： 由於導體層240電性連接於資料線13〇與畫 230之間，當液晶顯示面板搭配常態白晝面之顯示镇^ 且顯示黑晝面時，此畫素電極BO便會—直處於充電二， 態。這將使畫素結構200形成液晶顯示面板上的一暗处敗 當液晶顯示面板搭配常態白畫面之顯示模式，且顯示^。 時’由於所有的資料線130皆不傳遞資料訊號，^ 旦素電極230不會處於充電狀態，修補過的晝素結椽〇此 便會?成液晶顯示面板上的—亮點。但此時—液〇0 ^疋顯不全白的晝面，所以修補過的晝素結構200 ^ 以成顯不晝面的缺陷。此外’晝素電極挪並非 會 電壓，即使在液晶顯示面板上配置補償膜，， 顯不面板上也不會出現微亮點。 夜晶 _ 一爲2此修補方法只需利用雷射化學氣相沈積法、'少 -層：體層240,因此可以快逮修補有 高液晶料祕料勒率，降低液晶= 法雖S二==]中’畫素結構200的修補方 晝素電極二 部份沒極應之上與部份 畫素電極230 ^上形成一導體層240，而使資料線130詉 構200 ^ %性連接。然在其他實施例中，晝素二 雷極23。3 =法t可只於部份資料'線13°上與部份書ΐ 上料-導體層，而使資_ !3G與晝^ 12 1323868 】8276twf.doc/r 極230電性相連。 第二實施例The law, the purpose is to provide a method of repairing the structure of the pixel, in order to repair the defective structure of the element. Structure, f to structure: two: the purpose:, the present invention proposes - a species of strontium knot; - system, ·, σ structure including an active component, a captive screen; & a 素 素 secret. Active component configuration is connected by two. The protective layer covers the scanning lines and data; and the Beca line has a layer-first opening, an r-shaping line and an active part, and the parent has an opening to expose a part of the data line. The pixel 7 18276twf.d〇c/r electrode is electrically connected. According to the embodiment of the present invention, the first opening is more exposed to the active element according to the embodiment of the present invention. The first hole is more exposed to the partial pixel. According to the present invention, the second opening is exposed. Part of the main body has a first opening, in which the moving part and the element of the halogen element are filled in the second opening, the present invention is exemplified, and the protective layer is opened to expose a part of the halogen electrode. There is a younger brother-opening hole. This is the invention. In the embodiment, the halogen structure further includes a repairing electrode, a lightning layer and a partial filling in the first opening, and the repairing electricity = prime == prime one ^ width In the titr embodiment, the first opening is at least exposed to the data line. According to the invention - the embodiment, the active element comprises a thin film transistor. The invention further proposes a method for repairing a halogen structure, which is suitable for repairing the upper T item. The pixel structure, the repair method of the halogen structure comprises forming a conductor layer on the data and the pixel electrode, and the data line is electrically connected to the pixel electrode through the conductor layer. According to the invention - the embodiment of the conductor layer is formed The method includes a laser chemical phase deposition method. Based on the above-mentioned painting in the present invention In the structure, since the protective layer has 1323868. 18276twf.doc/r at least one opening, it exposes part of the data line. When the active component fails to function normally, a conductor layer may be formed above the opening to electrically connect the data line And the halogen element electrode. The repaired pixel structure forms a dark spot when the liquid crystal display panel is equipped with the normal white screen display mode and displays the black square surface. The liquid crystal display panel is matched with the normal white screen display mode, and the data When the line is not applied, the patched structure will become a bright spot, avoiding the defects of the full white screen. In addition, by using the repair method of the halogen structure of the present invention, the germanium structure can be quickly repaired, thereby improving the zero bright point ratio of the liquid crystal display panel, and reducing the production of the liquid crystal display panel. cost. The above and other objects, features, and advantages of the present invention will become more apparent from the description of the appended claims. [Embodiment] FIG. 2 is a cross-sectional view showing the structure of a halogen structure according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line 图 of FIG. Referring to FIG. 2, FIG. 2, the halogen structure 200 is fabricated on a substrate 110 and driven by a scan line on the substrate 110 and a data line 130. This: the germanium structure 2 includes an active device 21A, a protective layer 22A, and a ferrite electrode 230. The active device 21A is disposed on the substrate 11A and electrically connected to the =, the line 120 and the data line 13A. In addition, the protective layer is disposed on the scan line 12A, the data line 13A, and the active device 21A, and the protection layer 220 has a first opening 22〇a, which exposes a portion of the data line 9 18276twf.doc/r 130. The pixel electrode 230 is electrically connected to the active device 210. In the above, the substrate 11 is, for example, a glass substrate, a quartz substrate or a substrate of other suitable materials. The scan line 120 is, for example, an aluminum alloy wire or a wire formed of other suitable conductor materials. The data line 13〇 can be a chrome metal wire, an aluminum alloy wire or other suitable conductor material. The active component 210 is, for example, a thin film transistor or other tri-polar switching device. The material of the protective layer 220 is, for example, silicon nitride or other suitable material. The halogen electrode 230 is, for example, a transparent electrode (tranSparent eiectr〇de), a reflective electrode or a semi-transmissive electrode (tmnsflective electrode), and the material of the halogen electrode 230 may be indium tin oxide (indium). Tin oxide, IT0), indium zinc oxide (indium zjnc 〇xjde, ιζο), metal or other transparent or opaque conductive material. In more detail, in the present embodiment, the active device 210 is a thin film transistor. The active device 210 includes a gate 210a, an amorphous channel layer 210b, a source 21〇c, and a drain 210d. The gate 210a is connected to the scan line 120, and the gate 2i〇a and the scan line 120 are the first metal layer. Further, the source 21〇e is connected to the data line 130, and the data line 130, the source 21〇c, and the drain 21〇d are the second metal layers. Further, in the present embodiment, the first opening 22A of the protective layer 22A exposes a portion of the data line 130, and the first opening 220a preferably exposes more than one third of the nine degrees of the line of material 130. In addition, the first opening 220a also exposes a portion of the active component 210 (e.g., a portion of the drain 210d). In addition, as shown in FIG. 2B, the halogen electrode 230 is disposed on the layer 18220 of the 18276 twf.d〇c/r layer, and is partially filled in the first opening 22〇a to be opposite to the drain 21 of the active device 210. 〇d electrical connection. It is worth noting that the element 220 is not connected to the data line 13〇. Furthermore, the halogen electrode 230 of the present embodiment is disposed on the protective layer 220, but the halogen electrode 23A may be disposed under the protective layer 220. The above pixel structure 20 〇 can be applied to produce a liquid crystal display panel (not shown). However, in the manufacturing process of the liquid crystal display panel, if the pixel and the '200' have some defects and cannot function normally, the pixel structure 2(8) will be in the normal white surface display mode (n〇rmally white). A bright spot will be formed when the LCD panel is displayed. At this time, the defective ruthenium structure 2 可以 can be repaired so that the repaired ruthenium structure 2 形成 forms a dark spot on the liquid crystal display panel. The repair method for this halogen structure 2〇〇 will be described in detail later. 2C is a schematic view showing a repairing method of the halogen structure of FIG. 2A, and FIG. 2D is a cross-sectional view taken along line C-C' of FIG. 2C. Referring to FIG. 2C and FIG. 2D simultaneously, the pixel structure 200 is repaired by forming a conductor layer 240 over the partial data line Go and above the partial drain 2KM and over the partial halogen electrode 230. After the conductor layer 240 is formed, the data line 13 is electrically connected to the halogen electrode 230 by the conductor layer 240. Further, a method of forming the conductor layer 240 is, for example, a laser chemical vapor deposition (laser CVD) or other suitable method. Taking the laser chemical vapor deposition method as an example, the method of depositing the conductor layer 240 is to use an ultraviolet laser (UV laser)% and a tungSten hexacarbony(R) (W(C0)6). In order to form a conductor layer 240 composed of tungsten 1323868 1 S276twf.doc/r metal on the germanium structure 2, the chemical reaction formula is as follows: Since the conductor layer 240 is electrically connected between the data line 13 and the drawing 230 When the liquid crystal display panel is matched with the display of the normal white surface and the black surface is displayed, the pixel electrode BO will be in the state of charging. This will cause the pixel structure 200 to form a dark area on the liquid crystal display panel. The liquid crystal display panel is displayed in a normal white screen display mode and displayed. At that time, since all the data lines 130 do not transmit the data signals, the electrodes 230 are not in a charged state, and the repaired sputum is formed as a bright spot on the liquid crystal display panel. But at this time - the liquid 〇 0 ^ 疋 is not completely white, so the repaired ruthenium structure 200 ^ to become a defect. In addition, the elemental electrode is not a voltage. Even if a compensation film is placed on the liquid crystal display panel, no slight highlights appear on the panel. Night crystal _ one for 2 this repair method only needs to use laser chemical vapor deposition method, 'small-layer: body layer 240, so it can be quickly caught and repaired with high liquid crystal material secret rate, lower liquid crystal = method although S two = In the middle of the 'pixel element 200', the two sides of the repaired square electrode are formed with a conductor layer 240 on the partial pixel electrode 230, and the data line 130 is connected to the structure. However, in other embodiments, the alizarin two thunder poles 23. 3 = the law t can only be part of the data 'line 13 ° and part of the book loading - conductor layer, and the capital _ ! 3G and 昼 ^ 12 1323868 】8276twf.doc/r pole 230 is electrically connected. Second embodiment
圖，：圖3B;:'發施例之畫素結構的結構示意 圖从之畫素結的剖面固。圖職示 3C之Ε-Ε，線的剖面圖▲主止丁心圖，而圖3D繪示沿圖 實施例之畫素結構照圖3A與圖3B，本 似，不同之處在^ : 施例之畫素結構2〇〇相 於保護層320之下〇的晝素電極33〇是配置 上。此外，第1 π 件⑽的汲極测之 三分之-，且此笛一 Γ 7至少資料線130之線寬的 33〇 〇 汗口 32〇a也暴露了部份的晝素電極 請同時參照圖3C愈!Si m j * 4门λα* 興圖3D，晝素結構300的修補方法 相同於晝素結構2〇〇的修補方法. ^ 補方法。晝素結構300的修補方 φΓ ”貝、$ 130上方、部份沒極210d上與部份晝素 電極330上形成一莫科思q/ia —'、 〜糊盥蚩喜+導體層 而資料'線130即藉由此導 j與畫素電極330電性連接。此外，形成導體層34〇 ^方法例如採用雷射化學^目沈積法或是其他適當的方 法。 弟二實施例 圖4A繪示本發明第三實施例之畫素結構的結構示意 圖，圖4B繪示沿圖4A之抑，線之剖面圖。請同時參照圖 4A與圖4B ’晝素結構400卖員似於第一實施例之晝素結構 200 ’不同之處在於：保護層42〇的第一開口 4施只暴露 1323868 I8276twf.doc/r 了部份的資料'線130，並且至少暴露了資料線i3〇之寬度 的一刀之，但此第一開口 420a並未暴露晝素電極23〇。 此外，保護層42〇有-第二開口懈，此第二開口 42% 暴路了部份的主動元件210(即暴露了部份的汲極21〇句， 而晝素電極230部份填入第二開口 42%中，以與主動元件 210之汲極21〇d電性連接。 圖4C緣示目4A之晝素結構的修補方法示意圖，而圖 4D繪示沿圖4C之G_G，線之剖面圖。請同時參照圖4c逊 圖4D，畫素結構400的修補方法類似於晝素結構之修 補方法’此晝素結構4〇〇的修補方法是在保護層上带 成-導體層440，此導體層44G覆蓋部份㈣線13〇與部 份晝素電極230,且此導體層44〇也部份填入第一開口 4咖 中。資料線⑽可藉由此導體層44〇與畫素電極23〇電性 j接。而形成導體層44G的方法例如採用#射化學氣相沈 積法或是其他適當的方法。 …需注意的是’在本實施例中，暴露部份資料線13〇的 =-開孔420a雖位在主動元件训旁，但在其他的實施例 中’弟-開口杨並非限定要在主動元件21()的旁邊 例而言，第-開口 4 2 〇 a可位於f料線i 3 q上且離主動 训較遠之處’而畫素結構的修補方法則與上述相同。 至鸟貫施例 圖5A緣示本發明第四實施例之晝素結構的 圖，而圖5B繪示沿圖5Α^η·η，線之剖面圖 = 照圖5Α與圖5Β，畫素結構為第 =门〇 14 ]8276twf.doc/r °畫素結構5qq的畫素電極530是配置於保護 ^ to下’且位於主動凡件210的沒極210d之上。而第 至少一暴露一了資料線130之寬度的三分之一。保 了 的* = 52Qb，此第二開口 520b暴露 ’而晝素電極530 *主動元件_ 之/及極21 〇d電性連接。 圖5C繪示圖5A之金去彡本讲 沁緣示沿圖5C之u，線j、、。構的修補方法示意圖，而圖 犯，晝素結構的修圖。\同時參照圖5C與圖 方法，此晝素妙禮類似於晝素結構200之修補 一導體声54〇。 、^補方法是在保護層520上形成 電極^上形成部份資料線130上方與部份晝素 -開口 此導體層54G部份填入第 開520a與第二開口 UOb中，次乜砝】如叮益山L、首 體層540盘書辛命朽干中貝枓線130可猎由此導 方法例如按電性連接。而形成導體詹540的 胃射化學目沈積法妓其他適當的方法。 圖，L 補之晝素結構的結構示意 圖6八與圖6R，金二圖6 J，線之剖面圖。請同時參照 的變形、"5’里素結構600為第三實施例之畫素結構400 61〇。此修於：晝素結構6〇0包括—修補電極 一開D 木、^10配置於保護層420上，且部份填入第 與晝♦曾中以龟性連接於資料線130 ,而修補電極610 書辛極230电性絕緣。更詳細而言’修補電極610盘 素讀230為同H /、 1323868 18276twf.doc/r 圓队繪示圖6A之畫素結構的佟 6D緣示沿圖6C之K-K，缞^補方法不忍圖，而圖 圖6D，畫素結構_的修之==°請同時參照圖6C與 補方法，此畫素結構畫素結構柳之修 成一導體層_ 疋在保護層物上形 極230。貧料線13〇與修補 二％=素电 f,Ad ώ? ^ ^ ^ 电性相連，而導體層 640與修補電極61〇電性相 守版層 AAn rt Φ 逆 口此貝料線130可藉由此 ΐΐ電極23〇電性連接。而形成導體層640 ^方法例如㈣雷純學氣相沈積㈣是其他適當的方 法' 〇 由於導體層640是形成於修補電極61〇上，而非部份 填入第-開口 420a中，因此可以避免導體層_在第一開 口 420a的邊緣處因坡度太陡而造成斷線。故修補良率會更 高。 曰 综上所述，本發明提出之晝素結構與晝素結構的修補 方法至少具有下列優點： 一、 在本發明的晝素結構中，由於保護層具有至少一 開孔’其暴露出部分資料線，因此當主動元件無法正常作 用時，可在開口上方形成一導體層，以電性連接資料線與 晝素電極之間。當液晶顯示面板採用常態白晝面顯示模 式’並顯示黑晝面時，此修補後的畫素結構將不會形成亮 點，因此使用者不易察覺到此修補後的晝素結構。 二、 本發明的晝素結構之修補方法可用以修補有瑕庇 的晝素結構’因此當液晶顯示面板採用常態白晝面顯示模 1323868 18276twf.doc/r 式，並顯示黑晝面時’在液晶顯示面板上將不會形成袁點 或微亮點。如此可提尚液晶顯示面板的零輝點率，進而 低液晶顯示面板的生產成本。 牛 三、本發明之晝素結構的製作及其修補方法血現 程相容，除了變更其中數道光罩之設計以外，不需額 外的製程設備。 μ 雖然本發明已以較佳實施例揭露如上，然其並 限定本發明，任何熟習此技藝者，在獨離本發明之 和範圍内，當可作些許之更動與潤飾，因^ 範圍當視後附之申請專利範圍所界定者為 保5隻 【圖式簡單說明】 ’ 示一種習知薄膜電晶體陣列基板之上視圖。 圖1Β緣示沿圖1Α之Α★線之剖面圖。 圖 / Μ緣示本發明第—實施例之晝素結構的結構示意 圖2Β緣示沿圖2Α之抑，線之剖面圖。 圖2C繪示圖2八之晝素結構的修 圖料示沿圖2C^C，線之剖面圖去不』 圖 圖3A繪示本發明第二實施例之畫素結構的結構示意 圖犯繪示沿圖从之灿，線之剖面圖。 圖3C緣不圖3A之晝素結構的修補方法干 圖3D緣示沿圖3C之E_E，線之剖面圖。〜圖 圖4A繪不本發明第三實施 幻之旦素結構的結構示意 18276twf.doc/r 圖。 圖4B繪示沿圖4A之F-F’線之剖面圖。 圖4C繪示圖4A之晝素結構的修補方法示意圖。 圖4D繪示沿圖4C之G-G’線之剖面圖。 圖5A繪示本發明第四實施例之晝素結構的結構示意 圖。 圖5B繪示沿圖5A之H-H’線之剖面圖。 圖5C繪示圖5A之晝素結構的修補方法示意圖。 圖5D繪示沿圖5C之Ι-Γ線之剖面圖。 圖6A繪示本發明第五實施例之晝素結構的結構示意 圖。 圖6B繪示沿圖6A之M’線之剖面圖。 圖6C繪示圖6A之晝素結構的修補方法示意圖。 圖6D繪示沿圖6C之K-K’線之剖面圖。 【主要元件符號說明】 100 :薄膜電晶體陣列基板 110 :基板 120 :掃描線 130 :資料線 140、200、300、400、500、600 :晝素結構 142 :薄膜電晶體 142a、210a :閘極 142b、210b :非晶矽通道層 142c、210c :源極 1323868 18276twf.doc/r 142d、210d :汲極 . 144 :透明電極 -- 210 :主動元件 ♦ 220、320、420、520 :保護層 220a、320a、420a、520a :第一開口 420b、520b :第二開口 230、330、530 ··晝素電極 240、340、440、540、640 :導體層 φ 610:修補電極Fig. 3B; Fig. 3: Schematic diagram of the structure of the pixel structure of the embodiment. Figure 3C is a 剖面-Ε, line cross-section ▲ main stop Ding heart map, and Figure 3D shows the pixel structure along the figure embodiment. Figure 3A and Figure 3B, similarly, the difference is in: For example, the pixel structure of the pixel structure 2 is disposed below the protective layer 320. In addition, the first π piece (10) is measured by the third pole of the 汲 pole, and the flute Γ 7 at least the line width of the data line 130 is 33 〇〇 口 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 Referring to Fig. 3C, Si mj * 4 gate λα* is shown in Fig. 3D, and the repair method of the halogen structure 300 is the same as the repair method of the halogen structure 2 ^. ^ Complement method. The repairing side of the halogen structure 300, φ Γ ”, above the 130, the partial immersion 210d and the partial halogen electrode 330 form a Mocos Q/ia — ', 盥蚩 盥蚩 + + conductor layer and the data The line 130 is electrically connected to the pixel electrode 330 by means of the guide j. Further, the method of forming the conductor layer 34 is, for example, a laser chemical deposition method or other suitable method. FIG. 4B is a cross-sectional view showing the pixel structure of the third embodiment of the present invention, and FIG. 4B is a cross-sectional view taken along the line of FIG. 4A. Please refer to FIG. 4A and FIG. 4B simultaneously. The example of the halogen structure 200' differs in that the first opening 4 of the protective layer 42 is exposed to only the portion of the data 'line 130 of the 1323868 I8276twf.doc/r and at least the width of the data line i3〇 is exposed. One step, but the first opening 420a does not expose the halogen electrode 23〇. In addition, the protective layer 42 has a second opening, and the second opening 42% violently passes part of the active component 210 (ie exposed Part of the bungee 21 haiku, and the halogen electrode 230 part is filled into the second opening 42%, and active Figure 2C shows a schematic diagram of the repair method of the pixel structure of the object 4A, and Figure 4D shows a cross-sectional view of the line along the G_G of Figure 4C. Please refer to Figure 4c at the same time. 4D, the repair method of the pixel structure 400 is similar to the repair method of the halogen structure. The repair method of the germanium structure 4 is to form a conductor layer 440 on the protective layer, and the conductor layer 44G covers part (four) of the line 13 And a portion of the halogen electrode 230, and the conductor layer 44 is also partially filled in the first opening 4. The data line (10) can be electrically connected to the pixel electrode 23 by the conductor layer 44. The method of forming the conductor layer 44G is, for example, a #CVD chemical vapor deposition method or other suitable method. It should be noted that in the present embodiment, the exposed portion of the data line 13〇--the opening 420a is located at Next to the active component training, but in other embodiments, the 'different opening Yang is not limited to the side of the active element 21 (), the first opening 4 2 〇a may be located on the f-feed line i 3 q and away from The active training is farther away, and the repair method of the pixel structure is the same as above. To the bird example, FIG. 5A shows the invention. Figure 4B shows a diagram of the structure of the elementary structure, and Figure 5B shows a section along the line of Fig. 5: Fig. 5Α and Fig. 5Β, the pixel structure is the first threshold 14] 8276twf.doc/r The pixel electrode 530 of the pixel structure 5qq is disposed under the protection and is located on the pole 210d of the active component 210. The first one exposes one third of the width of the data line 130. * = 52Qb, the second opening 520b is exposed 'and the halogen element 530 * active element _ / and the pole 21 〇d are electrically connected. Fig. 5C is a diagram showing the gold edge of Fig. 5A. The edge is shown along line u of Fig. 5C, line j, . Schematic diagram of the repair method of the structure, and the map, the retouching of the structure of the alizarin. Referring to Figure 5C and the method at the same time, this elementary gift is similar to the repair of the halogen structure 200. The method of filling is formed on the protective layer 520 to form a portion of the data line 130 and a portion of the pixel-opening portion of the conductor layer 54G is filled into the opening 520a and the second opening UOb, respectively. For example, Yiyishan L, the first body layer of 540 books, and the sacred slabs of the scorpion line 130 can be hunted by this method, for example, electrically connected. The formation of the conductor Zhan 540 is a suitable method for the deposition of gastric chemistry. Fig. 6 shows the structure of the structure of the alizarin. Fig. 6 and Fig. 6R, Fig. 6 J, the sectional view of the line. The deformation, "5' lining structure 600, which is also referred to at the same time, is the pixel structure 400 of the third embodiment. This repair is: the halogen structure 6〇0 includes—the repair electrode is opened D wood, and the ^10 is disposed on the protective layer 420, and the part is filled with the first and the first 昼 ♦ was connected to the data line 130 by the turtle, and repaired Electrode 610 is ohmically insulated. In more detail, the 'repair electrode 610 disk reading 230 is the same as H /, 1323868 18276twf.doc / r. The 佟6D edge of the pixel structure of Figure 6A is shown along the KK of Figure 6C. Figure 6D, the pixel structure _ repair == ° Please refer to Figure 6C and the complement method, the pixel structure pixel structure will be repaired into a conductor layer _ 保护 on the protective layer on the pole 230. The lean line 13〇 is electrically connected to the repaired two%=primary electricity f, Ad ώ? ^ ^ ^, and the conductor layer 640 and the repairing electrode 61 are electrically aligned with the layer AAn rt Φ. Thereby, the crucible electrode 23 is electrically connected. The formation of the conductor layer 640 ^ method, for example, (d) Lei pure vapor deposition (four) is another suitable method ' 〇 because the conductor layer 640 is formed on the repair electrode 61 ,, rather than partially filling the first opening 420a, so It is avoided that the conductor layer _ is broken at the edge of the first opening 420a because the slope is too steep. Therefore, the repair rate will be higher. In summary, the method for repairing a halogen structure and a halogen structure proposed by the present invention has at least the following advantages: 1. In the halogen structure of the present invention, since the protective layer has at least one opening, it exposes part of the data. Wire, so when the active component does not function properly, a conductor layer can be formed over the opening to electrically connect the data line to the pixel electrode. When the liquid crystal display panel adopts the normal white surface display mode and displays the black surface, the repaired pixel structure will not form a bright spot, so that the user can hardly perceive the repaired pixel structure. 2. The repair method of the halogen structure of the present invention can be used to repair the structure of the ruthenium-containing structure. Therefore, when the liquid crystal display panel adopts the normal white enamel display mode 1323868 18276 twf.doc/r type, and the black enamel surface is displayed, No or small highlights will be formed on the display panel. This can increase the zero-brightness rate of the liquid crystal display panel, thereby lowering the production cost of the liquid crystal display panel. Niu III. The preparation of the halogen structure of the present invention and the repair method thereof are compatible with the blood process, and no additional process equipment is required except for changing the design of several masks. Although the present invention has been disclosed in the above preferred embodiments, it is intended to limit the scope of the invention, and it is possible to make some modifications and refinements within the scope of the present invention. The scope of the appended patent application is defined as 5 (simplified description of the drawing) 'showing a top view of a conventional thin film transistor array substrate. Figure 1 shows the cross-section of the line along the line of Figure 1. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 2 is a cross-sectional view showing the structure of a halogen structure according to a first embodiment of the present invention. 2C is a cross-sectional view of the pixel structure of FIG. 2, and FIG. 3A is a cross-sectional view of the pixel structure of the second embodiment of the present invention. FIG. Along the map, the cross-section of the line. 3C is a repairing method for the halogen structure of FIG. 3A. FIG. 3D is a cross-sectional view taken along line E_E of FIG. 3C. Figure 4A depicts the third embodiment of the present invention. The structure of the structure of the phantom is shown in the figure 18276twf.doc/r. Fig. 4B is a cross-sectional view taken along line F-F' of Fig. 4A. 4C is a schematic view showing a repairing method of the halogen structure of FIG. 4A. Fig. 4D is a cross-sectional view taken along line G-G' of Fig. 4C. Fig. 5A is a view showing the structure of a halogen structure of a fourth embodiment of the present invention. Fig. 5B is a cross-sectional view taken along line H-H' of Fig. 5A. FIG. 5C is a schematic view showing a repairing method of the halogen structure of FIG. 5A. Figure 5D is a cross-sectional view taken along line Γ-Γ of Figure 5C. Fig. 6A is a view showing the configuration of a halogen structure of a fifth embodiment of the present invention. Fig. 6B is a cross-sectional view taken along line M' of Fig. 6A. FIG. 6C is a schematic view showing the repairing method of the halogen structure of FIG. 6A. Fig. 6D is a cross-sectional view taken along line K-K' of Fig. 6C. [Description of main component symbols] 100: Thin film transistor array substrate 110: Substrate 120: Scanning line 130: Data lines 140, 200, 300, 400, 500, 600: Alizardin structure 142: Thin film transistors 142a, 210a: Gate 142b, 210b: amorphous germanium channel layer 142c, 210c: source 1323868 18276twf.doc / r 142d, 210d: germanium. 144: transparent electrode - 210: active device ♦ 220, 320, 420, 520: protective layer 220a , 320a, 420a, 520a: first openings 420b, 520b: second openings 230, 330, 530 · halogen electrodes 240, 340, 440, 540, 640: conductor layer φ 610: repair electrode