WO2019205276A1 - 晶片加工系统 - Google Patents

晶片加工系统 Download PDF

Info

Publication number
WO2019205276A1
WO2019205276A1 PCT/CN2018/093394 CN2018093394W WO2019205276A1 WO 2019205276 A1 WO2019205276 A1 WO 2019205276A1 CN 2018093394 W CN2018093394 W CN 2018093394W WO 2019205276 A1 WO2019205276 A1 WO 2019205276A1
Authority
WO
WIPO (PCT)
Prior art keywords
stage
film
robot
processing system
unit
Prior art date
Application number
PCT/CN2018/093394
Other languages
English (en)
French (fr)
Inventor
魏民
邹金成
申兵兵
李伟
王敬苗
杨巍
Original Assignee
北京创昱科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京创昱科技有限公司 filed Critical 北京创昱科技有限公司
Publication of WO2019205276A1 publication Critical patent/WO2019205276A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors

Definitions

  • This invention relates to the field of wafer processing, and more particularly to a wafer processing system.
  • a solar cell is a device that directly converts light energy into electrical energy through a photoelectric effect or a photochemical effect.
  • a thin film solar cell operating with a photoelectric effect is a mainstream solar cell, and its main functional component is a photovoltaic film.
  • the photovoltaic film attached to the wafer substrate needs to be removed by etching or the like to remove the sacrificial layer, and then the separation film is used to separate the photovoltaic film from the substrate to facilitate further processing.
  • the separated substrate can be repeatedly used for the formation of a photovoltaic film.
  • the above process can be completed in the epitaxial lift-off system of the solar cell production line.
  • the wafer with the film is first loaded into the column, and then the wafer is placed in the etching process chamber for the wet etching process. After the etching process, the etched film and the wafer substrate are unloaded, and then the film and the wafer substrate are separated from each other, and further processed separately.
  • the bottleneck of the production efficiency of the epitaxial lift-off system is how to quickly and reliably complete the unloading and separation of the film and the substrate after the etching process.
  • the epitaxial lift-off system uses a single robot to perform the unloading work and the film-substrate separation. After the operation of the film. There is usually only one unloading position of the epitaxial stripping system. When there are multiple etching chambers, after completing the wafer unloading and separating work in one column, it is necessary to wait for another column to be loaded on the unloading position. The wafer in the other column is unloaded and separated. Therefore, a wafer processing system with higher film unloading and separation efficiency is expected.
  • the present invention provides a wafer processing system including a substrate and a thin film on the substrate, the wafer processing system including: an etching unit, the etching unit output to be separated a plurality of the wafers; and a separation unit comprising at least two first stages and a robot assembly, the first stage being located on one side of the etching unit, the first stage being used for Carrying a plurality of the wafers to be separated, the robot assembly is alternately switched at each position of all of the first stages, and the film of the plurality of wafers on the first stage is taken from Separation on the substrate.
  • the wafer processing system further comprises: an assembly unit located on a side of the separation unit for assembling the separated film and the frame.
  • the etching unit, the separating unit and the assembling unit are arranged along a first lateral direction
  • the robot assembly comprising: a first robot for picking up a plurality of the wafers on the first stage And stripping the film of the plurality of wafers from the substrate; and a first linear module extending along the first lateral direction, the first robot is disposed on the first linear module, The first linear module drives the first robot to move between the at least two first stages and the assembly unit.
  • At least two first stages of the separating unit are arranged along a second lateral direction perpendicular to the first lateral direction, and the robot assembly further comprises: a second linear module extending along the second lateral direction, The first linear module is disposed on the second linear module, and the second linear module drives the first linear module and the first robot at each position of all the first stages Switch on the top.
  • the first robot includes a plurality of discrete subunits arranged side by side, each of the separation subunits for picking up one of the wafers on the first stage and the film of the wafer from The substrate is peeled off.
  • the assembly unit comprises: a second stage on a side of the separation unit for carrying the separated film; at least one first image sensor disposed above the second stage, Positioning the separated film; a third stage on a side of the second stage for carrying a frame; and at least one second image sensor located above the third stage for Positioning the frame; and a second robot disposed between the second stage and the third stage for moving the film on the second stage to the third stage And assembled with the frame.
  • the second stage is a rotating stage, the second stage is rotated such that the film is switched at a plurality of positions, the plurality of positions including an image collection position of the at least one first image sensor The picking position of the second robot.
  • the second robot is connected to the at least one first image sensor for correcting a placement position of the film on the third stage according to an image signal of the at least one first image sensor.
  • the assembly unit further includes: a third linear module connected to the third stage for outputting the completed assembled film to the outside of the system.
  • the film is a photovoltaic flexible film.
  • the separation unit includes at least two first stages and a robot assembly, each of which can carry a plurality of the wafers to be separated, the robot assembly being in all of the Switching between the positions of the first stage in turn, and peeling the film corresponding to the plurality of the wafers on the first stage from the substrate, so that the film and the substrate are physically Separated from each other in position.
  • the robot assembly when the robot assembly separates the wafers on one of the first stages, the other first stages can simultaneously perform the loading of the wafers to be separated, and the robot assembly cycle switches between the first stages. Work, compared with the traditional production line, saves the robot component waiting for the first stage to load the wafer, improves the efficiency of film separation, and thus greatly improves product yield and production efficiency.
  • the first robot includes a plurality of discrete subunits arranged side by side, each of the plurality of discrete subunits for unloading one of the wafers such that a single robot assembly can simultaneously
  • the plurality of wafers to be separated on the first stage are subjected to an unloading operation to improve unloading and production efficiency.
  • the wafer processing system further includes an assembly unit for assembling the unloaded film to the frame, in the assembly unit, the second stage may be a rotating stage, the second stage Rotating causes the film to be switched at a plurality of locations, wherein the plurality of locations includes an image acquisition location of the at least one first image sensor, a pickup location of the second robot, thereby enabling a batch film to be in a plurality of locations Fast switching to speed up production efficiency.
  • the second robot is connected to the at least one first image sensor, and can correct a placement position of the film on the third stage according to an image signal of the at least one first image sensor, and improve a film and a frame. Accuracy when installing.
  • FIG. 1 is a schematic structural view of a wafer processing system according to an embodiment of the present invention.
  • connection In the description of the present invention, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise explicitly defined and defined. Connected, or integrally connected; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • Connected, or integrally connected can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • the specific meaning of the above terms in the present invention can be understood in a specific case by those skilled in the art.
  • the present invention provides a wafer processing system in which a wafer to be processed includes a substrate and a film on the substrate.
  • the wafer processing system of the present invention can be used, for example, as an epitaxial lift-off system on a solar thin film battery production line, wherein the wafer to be processed can include, for example, a gallium arsenide substrate and a photovoltaic flexible film attached to the gallium arsenide substrate, the photovoltaic The film can be combined with the polymer frame after being separated from the gallium arsenide substrate to further form a solar thin film battery.
  • the wafer processing system includes an etching unit 100 and a separation unit 200, and the etching unit 100 outputs a plurality of wafers to be separated.
  • the etch unit 100 includes a chamber 110 in which a plurality of wafers are typically placed in a slab, and then the bats are placed in the chamber 110 of the etch unit 100 along with the wafer, when the wafer is in the etch unit After the etching process is completed in the chamber 110 of 100, the device can be transported from the exit of the process chamber to the first stage 210 using a robot or the like.
  • the separation unit 200 of the present invention is used for the film and the substrate of the wafer after the etching process. The physical location is further separated.
  • the separation unit 200 includes at least two first stages 210 and a robot assembly 220.
  • the first stage 210 is located on one side of the etching unit 100, the first stage 210 is used to carry a plurality of wafers to be separated, and the robot assembly 220 is at all
  • the respective positions of the first stage 210 are alternately switched, and the films corresponding to the plurality of wafers on the first stage 210 are separated from the substrate.
  • the robot assembly 220 can be switched to correspond to the position of one first stage 210, and correspondingly, all the wafers on one first stage 210 are separated each time, while the remaining first stages 210 can be separated.
  • the robot assembly 220 can also be switched to correspond to the positions of the plurality of first stages 210 each time, correspondingly, separating all the wafers on the plurality of first stages 210 each time, while the remaining first loads
  • the stage 210 can still perform the loading work of the wafer to be separated.
  • the robot assembly 220 is cyclically switched at each position of the two first stages 210, and each time the switching robot assembly 220 corresponds to the position of a first stage 210.
  • the wafer processing system may further include an assembly unit 300 on one side of the separation unit 200 for assembling the separated film with the frame.
  • the etching unit 100, the separating unit 200, and the assembling unit 300 are arranged along a first lateral direction
  • the robot assembly 220 includes a first robot 221 and a first linear module 222.
  • the first robot 221 is configured to pick up a plurality of wafers on the first stage 210 and peel the film of the plurality of wafers from the substrate, and the first linear module 222 extends along the first lateral direction A, first
  • the robot 221 is disposed on the first linear module 222.
  • the first linear module 222 drives the first robot 221 to move between the at least two first carriers 210 and the assembly unit 300.
  • the at least two first stages 210 of the separation unit 200 may be arranged in a second lateral direction B perpendicular to the first lateral direction A, and the robot assembly 220 may further include a second linear module 223.
  • the second linear module 223 extends along the second lateral direction B.
  • the first linear module 222 is disposed on the second linear module 223, and the second linear module 223 drives the first linear module 222 and the first robot 221 at least.
  • the positions of the two first stages 210 are switched.
  • the first robot 221 may include a plurality of discrete subunits 2211 disposed side by side, each of the discrete subunits 2211 for picking up a wafer on the first stage 210 and stripping the film of the wafer from the substrate.
  • the assembly unit 300 may include a second stage 310, at least one first image sensor 320, a third stage 330, at least one second image sensor 340, and a second robot 350.
  • the second stage 310 is located on the side of the separation unit 200 for carrying the separated film.
  • At least one first image sensor 320 is disposed above the second stage 310 for positioning the separated film.
  • the third stage 330 is located on the side of the second stage 310 for carrying the frame.
  • At least one second image sensor 340 is located above the third stage 330 for positioning the frame.
  • the second robot 350 is disposed between the second stage 310 and the third stage 330 for moving the film on the second stage 310 to the third stage 330 and assembled with the frame.
  • the assembly unit 300 may further include a third linear module 360 coupled to the third stage 330 for outputting the assembled film to the outside of the system.
  • the second stage 310 is a rotating stage, and the second stage 310 is rotated to switch the film at a plurality of positions, the plurality of positions including the image capturing position of the at least one first image sensor 320, and the second robot Pickup position of the 350.
  • the second robot 350 can be signally coupled to the at least one first image sensor 320 for correcting the placement of the film on the third stage 330 based on the image signal of the at least one first image sensor 320.
  • the etch unit 100 typically includes a plurality of chambers 110 for performing an etch process, such as in a row.
  • the plurality of chambers 110 of the etch unit 100 output a plurality of wafers to be separated, and the wafers to be separated may be loaded on at least two first stages 210, and the first robot 221 may be driven by the second linear module 223.
  • the switching is moved between the at least two first stages 210, and the plurality of wafers on the corresponding first stage 210 are subjected to a take-out and separation operation to obtain a separated film and substrate.
  • the separated substrate can be transported to the substrate cleaning and recycling device to achieve repeated use of the substrate, which will not be described herein.
  • the first linear module 222 can drive the first robot 221 to send the separated film to the second stage 310.
  • the first stage 310 can be disposed with a plurality of first image sensors 320. After the plurality of first image sensors 320 photograph and position the plurality of films, the second stage 310 starts to rotate, for example, 180° along the center thereof, and the plurality of films are rotated.
  • the second robot 350 picks up a plurality of films, sends them to the third stage 330 and combines with the plurality of frames placed on the third stage 330, so that the film and the frame are combined
  • the second image sensor 340 on the third stage 330 may also be multiple, and the frame on the third stage 330 may be visually positioned to ensure a relatively accurate relative position of the film on the frame.
  • it can be sent out of the system through the third linear module 360, for example, to the storage basket.
  • the separation unit 200 includes at least two first stages 210 and a robot assembly 220, the first stage 210 can carry a plurality of wafers to be separated, and the robot assembly 220 is on all of the first stages 210. The respective positions are alternately switched, and the films corresponding to the plurality of wafers on the first stage 210 are separated from the substrate.
  • the robot assembly 220 performs the separation operation of the wafer on one or some of the first stages 210
  • the other first stage 210 can simultaneously perform the loading operation of the wafer to be separated, and the robot assembly 220 is cycled. Switching between the first stages 210 reduces the time for the robot assembly 220 to wait for the first stage 210 to load the wafer compared with the conventional production line, thereby improving the efficiency of film separation, thereby greatly improving product yield and production efficiency.
  • the first robot 221 includes a plurality of discrete sub-units 2211 arranged side by side, each of the separate sub-units 2211 is used for unloading and separating operations on one wafer, so that the single robot assembly 220 can simultaneously be on the first stage 210.
  • the wafers to be separated are subjected to unloading and separation operations to improve separation and production efficiency.
  • the wafer processing system of the present embodiment further includes an assembly unit 300 for assembling the separated film and the frame.
  • the second stage 310 may be a rotating stage, and the second stage 310 is rotated such that the film is
  • the plurality of positions include the image capturing position of the at least one first image sensor 320 and the picking position of the second robot 350, thereby achieving rapid switching of the batch film between the plurality of positions, thereby speeding up production efficiency.
  • the second robot 350 is connected to the at least one first image sensor 320, and can correct the placement position of the film on the third stage 330 according to the image signal of the at least one first image sensor 320, thereby improving the accuracy of mounting the film and the frame. .
  • the wafer processing system of the invention realizes automatic separation and rapid unloading of the film from the substrate, is convenient and quick, greatly improves the output and production efficiency, reduces the production cost, and the above system is simple in structure, easy to operate and maintain. The cost is relatively low and easy to implement and implement.

Abstract

一种晶片加工系统，晶片包括衬底以及位于衬底上的薄膜，晶片加工系统包括：刻蚀单元（100），刻蚀单元（100）输出待分离的多个晶片；以及分离单元（200），分离单元（200）包括至少两个第一载台（210）以及机械手组件（220），第一载台（210）位于刻蚀单元（100）一侧，第一载台（210）用于承载待分离的多个晶片，机械手组件（220）在所有第一载台（210）的各位置上轮流切换，并将第一载台上（210）的多个晶片的薄膜从衬底上分离。

Description

晶片加工系统 技术领域
本发明涉及晶片加工领域，特别是涉及一种晶片加工系统。
背景技术
太阳能电池是通过光电效应或光化学效应将光能直接转化为电能的装置，目前以光电效应工作的薄膜式太阳能电池为主流太阳能电池，其主要功能元件为光伏薄膜。
传统的薄膜太阳能电池在加工过程中，需要将贴合在晶片衬底上的光伏薄膜通过刻蚀等工艺去除牺牲层，然后利用分离器械将光伏薄膜从衬底上分离，以方便进一步的加工，分离后的衬底可以重复用于光伏薄膜的生成。
以上过程可以在太阳能电池生产线的外延剥离系统中完成，在外延剥离系统中，首先装载带有薄膜的晶片到栏具内，然后将晶片置于刻蚀工艺腔室内进行湿法刻蚀工艺，完成刻蚀工艺后，卸载刻蚀后的薄膜和晶片衬底，之后将薄膜和晶片衬底相互分离，分别进行各自进一步的加工。
现有技术中，外延剥离系统生产效率的瓶颈在于如何快速可靠地完成刻蚀工艺后薄膜与衬底的卸载与分离，一般而言，外延剥离系统采用单个机械手进行卸载工作以及薄膜与衬底分离后对薄膜的操作。外延剥离系统的卸载位通常只有一个，当刻蚀工艺腔室存在多个时，完成一个栏具内的晶片卸载与分离工作后，需要等待另一栏具装载在卸载位上，才能继续对该另一栏具内的晶片进行卸载与分离工作。因此，期待一种薄膜卸载与分离效率更高的晶片加工系统。
发明内容
(一)要解决的技术问题
本发明的目的是提供一种薄膜卸载分离效率更高的晶片加工系统，进一步提高生产效率。
(二)技术方案
为了解决上述技术问题，本发明提供一种晶片加工系统，所述晶片包括衬底以及位于所述衬底上的薄膜，所述晶片加工系统包括：刻蚀单元，所述刻蚀单元输出待分离的多个所述晶片；以及分离单元，所述分离单元包括至少两个第一载台以及机械手组件，所述第一载台位于所述刻蚀单元一侧，所述第一载台用于承载待分离的多个所述晶片，所述机械手组件在所有所述第一载台的各位置上轮流切换，并将所述第一载台上的多个所述晶片的所述薄膜从所述衬底上分离。
优选地，所述晶片加工系统还包括：组装单元，位于所述分离单元一侧，用于将分离后的所述薄膜与框架组装。
优选地，所述刻蚀单元、所述分离单元以及所述组装单元沿第一横向布置，所述机械手组件包括：第一机械手，用于拾取所述第一载台上的多个所述晶片并将多个所述晶片的所述薄膜从所述衬底上剥离；以及第一线性模组，沿所述第一横向延伸，所述第一机械手设置在所述第一线性模组上，所述第一线性模组带动所述第一机械手在所述至少两个第一载台与所述组装单元之间运动。
优选地，所述分离单元的至少两个第一载台沿与所述第一横向垂直的第二横向布置，所述机械手组件还包括：第二线性模组，沿所述第二横向延伸，所述第一线性模组设置在所述第二线性模组上，所述第二线性模组带动所述第一线性模组以及所述第一机械手在所有所述第一载台的各位置上轮流切换。
优选地，所述第一机械手包括并排设置的多个分离子单元，每个所述分离子单元用于拾取所述第一载台上的一个所述晶片并将所述晶片的所述薄膜从所述衬底上剥离。
优选地，所述组装单元包括：第二载台，位于所述分离单元一侧， 用于承载分离后的所述薄膜；至少一个第一图像传感器，设置在所述第二载台上方，用于对分离后的所述薄膜定位；第三载台，位于所述第二载台一侧，用于承载框架；至少一个第二图像传感器，位于所述第三载台上方，用于对所述框架定位；以及第二机械手，设置在所述第二载台与所述第三载台之间，用于将所述第二载台上的所述薄膜移至所述第三载台上并与所述框架组装。
优选地，所述第二载台为旋转载台，所述第二载台旋转使得所述薄膜在多个位置上切换，所述多个位置包括所述至少一个第一图像传感器的图像采集位置、所述第二机械手的拾取位置。
优选地，所述第二机械手与所述至少一个第一图像传感器信号连接，用于根据所述至少一个第一图像传感器的图像信号修正所述薄膜在所述第三载台上的放置位置。
优选地，所述组装单元还包括：第三线性模组，与所述第三载台连接，用于将完成组装的所述薄膜输出至系统外。
优选地，所述薄膜为光伏柔性薄膜。
(三)有益效果
根据本发明提供的晶片加工系统，所述分离单元包括至少两个第一载台以及机械手组件，每个第一载台中可以承载待分离的多个所述晶片，所述机械手组件在所有所述第一载台的各位置上轮流切换，并将对应所述第一载台上的多个所述晶片的所述薄膜从所述衬底上剥离，使得所述薄膜与所述衬底在物理位置上彼此分离。通过上述改进结构，当机械手组件对其中一个第一载台上的晶片进行分离工作时，其他第一载台可以同时进行待分离晶片的装载工作，机械手组件循环在各第一载台之间切换工作，与传统生产线相比节省了机械手组件等待第一载台装载晶片的时间，提高薄膜分离的效率，进而很大程度提高了产品产量和生产效率。
在优选的实施例中，所述第一机械手包括并排设置的多个分离子 单元，所述多个分离子单元中的每个用于对一个所述晶片进行卸载，使得单个机械手组件可以同时对第一载台上的多个待分离晶片进行卸载操作，提高卸载和生产效率。
在优选的实施例中，晶片加工系统还包括用于将卸载的所述薄膜与框架组装的组装单元，在组装单元中，所述第二载台可以为旋转载台，所述第二载台旋转使得所述薄膜在多个位置上切换，其中所述多个位置包括所述至少一个第一图像传感器的图像采集位置、所述第二机械手的拾取位置，从而实现批量薄膜在多个位置间的快速切换，加快生产效率。所述第二机械手与所述至少一个第一图像传感器信号连接，可以根据所述至少一个第一图像传感器的图像信号修正所述薄膜在所述第三载台上的放置位置，提高薄膜与框架进行安装时的精确度。
附图说明
图1为本发明实施例的晶片加工系统的结构示意图。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实例用于说明本发明，但不用来限制本发明的范围。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
本发明提供一种晶片加工系统，其中待加工的晶片包括衬底以及位于所述衬底上的薄膜。本发明的晶片加工系统例如可以用于太阳能薄膜电池生产线上作为外延剥离系统，其中待加工的晶片例如可以包括砷化镓衬底以及贴合在砷化镓衬底上的光伏柔性薄膜，该光伏薄膜 在与砷化镓衬底分离后可与聚合物框架组合，从而进一步形成太阳能薄膜电池。
图1示出本发明实施例的晶片加工系统的结构示意图，所述晶片加工系统包括刻蚀单元100以及分离单元200，刻蚀单元100输出待分离的多个晶片。刻蚀单元100包括腔室110，在刻蚀工艺中，通常将多个晶片放置在栏具中，然后将栏具连同晶片置于刻蚀单元100的腔室110内，当晶片在刻蚀单元100的腔室110中完成刻蚀工艺后，可以使用机械手等装置将栏具连同晶片从工艺腔室的出口传输至第一载台210。
在刻蚀工艺中，晶片的衬底与薄膜之间的牺牲层去掉，衬底与薄膜之间仅有部分粘连，本发明的分离单元200用于将刻蚀工艺后晶片的薄膜与衬底的物理位置进一步分离。
分离单元200包括至少两个第一载台210以及机械手组件220，第一载台210位于刻蚀单元100一侧，第一载台210用于承载待分离的多个晶片，机械手组件220在所有第一载台210的各位置上轮流切换，并将对应第一载台210上的多个晶片的薄膜从衬底上分离。其中，机械手组件220每次可以切换至与一个第一载台210位置对应，对应地，每次对一个第一载台210上的全部晶片进行分离，同时其余第一载台210可以进行待分离晶片的装载工作；机械手组件220每次也可以切换至与多个第一载台210位置对应，对应地，每次对多个第一载台210上的全部晶片进行分离，同时其余第一载台210仍然可以进行待分离晶片的装载工作。本实施例中机械手组件220例如是循环在两个第一载台210的各位置上切换，每次切换机械手组件220与一个第一载台210的位置对应。
晶片加工系统还可以包括组装单元300，其位于分离单元200一侧，用于将分离后的薄膜与框架组装。
在本实施例中，刻蚀单元100、分离单元200以及组装单元300沿 第一横向布置，机械手组件220包括第一机械手221以及第一线性模组222。第一机械手221用于拾取第一载台210上的多个晶片并将多个晶片的所述薄膜从所述衬底上剥离，第一线性模组222沿第一横向A向延伸，第一机械手221设置在第一线性模组222上，第一线性模组222带动第一机械手221在至少两个第一载台210与组装单元300之间运动。
分离单元200的至少两个第一载台210可以沿与第一横向A向垂直的第二横向B向布置，机械手组件220还可以包括第二线性模组223。第二线性模组223沿第二横向B向延伸，第一线性模组222设置在第二线性模组223上，第二线性模组223带动第一线性模组222以及第一机械手221在至少两个第一载台210的位置上切换。
第一机械手221可以包括并排设置的多个分离子单元2211，每个分离子单元2211用于拾取第一载台210上的一个晶片并将该晶片的所述薄膜从所述衬底上剥离。
组装单元300可以包括第二载台310、至少一个第一图像传感器320、第三载台330、至少一个第二图像传感器340以及第二机械手350。第二载台310位于分离单元200一侧，用于承载分离后的薄膜。至少一个第一图像传感器320设置在第二载台310上方，用于对分离后的薄膜定位。第三载台330位于第二载台310一侧，用于承载框架。至少一个第二图像传感器340位于第三载台330上方，用于对框架定位。第二机械手350设置在第二载台310与第三载台330之间，用于将第二载台310上的薄膜移至第三载台330上并与框架组装。此外，组装单元300还可以包括第三线性模组360，其与第三载台330连接，用于将完成组装的薄膜输出至系统外。
在本实施例中，第二载台310为旋转载台，第二载台310旋转使得薄膜在多个位置上切换，多个位置包括至少一个第一图像传感器320的图像采集位置、第二机械手350的拾取位置。
第二机械手350可以与至少一个第一图像传感器320信号连接，用于根据至少一个第一图像传感器320的图像信号修正薄膜在第三载台330上的放置位置。
对于大产能的生产系统而言，刻蚀单元100通常包括用于进行刻蚀工艺的多个腔室110，例如是呈一字排开。刻蚀单元100的多个腔室110输出多个待分离的晶片，待分离的晶片可以装载在至少两个第一载台210上，第一机械手221在第二线性模组223的带动下可以在至少两个第一载台210之间移动切换，并且对相应的第一载台210上的多个晶片进行取出和分离操作，得到分离后的薄膜和衬底。其中，分离后的衬底可以输送至衬底清洗回收装置，以实现衬底的重复使用，此处不再赘述。第一线性模组222带动第一机械手221可以将分离后的薄膜送至第二载台310上，第二载台310的上方可以设置多个第一图像传感器320，可以将多个薄膜放置在多个第一图像传感器320的图像采集位置上，多个第一图像传感器320对多个薄膜进行拍照定位后，第二载台310开始旋转，例如是沿其中心转动180°，将多个薄膜切换至第二机械手350的拾取位置，第二机械手350拾取多个薄膜，将其送至第三载台330并与第三载台330上放置的多个框架组合，使得薄膜与框架合二为一，第三载台330上的第二图像传感器340也可以是多个，可以对第三载台330上的框架进行视觉定位，保证薄膜在框架上的相对位置更精准。薄膜和框架组合完成后，可以通过第三线性模组360送至系统外，例如送至存储篮中。
根据本发明提供的晶片加工系统，分离单元200包括至少两个第一载台210以及机械手组件220，第一载台210可以承载待分离的多个晶片，机械手组件220在所有第一载台210的各位置上轮流切换，并将对应第一载台210上的多个晶片的薄膜从衬底上分离。通过上述改进结构，当机械手组件220对其中某个或某些第一载台210上的晶片进行分离工作时，其他第一载台210可以同时进行待分离晶片的装载工作， 机械手组件220循环在各第一载台210之间切换工作，与传统生产线相比节省了机械手组件220等待第一载台210装载晶片的时间，提高薄膜分离的效率，进而很大程度提高了产品产量和生产效率。
由于第一机械手221包括并排设置的多个分离子单元2211，每个分离子单元2211中用于对一个晶片进行卸载和分离操作，使得单个机械手组件220可以同时对第一载台210上的多个待分离晶片进行卸载和分离操作，提高分离和生产效率。
本实施例的晶片加工系统还包括用于将分离后的薄膜与框架组装的组装单元300，在组装单元300中，第二载台310可以为旋转载台，第二载台310旋转使得薄膜在多个位置上切换，其中多个位置包括至少一个第一图像传感器320的图像采集位置、第二机械手350的拾取位置，从而实现批量薄膜在多个位置间的快速切换，加快生产效率。第二机械手350与至少一个第一图像传感器320信号连接，可以根据至少一个第一图像传感器320的图像信号修正薄膜在第三载台330上的放置位置，提高薄膜与框架进行安装时的精确度。
本发明的晶片加工系统实现了薄膜从衬底上的自动化分离和快速卸载，方便快捷，在很大程度上提高了产量和生产效率，降低了生产成本，并且上述系统结构简单，易于操作和维护，成本相对较低，易于实现和实施。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种晶片加工系统，所述晶片包括衬底以及位于所述衬底上的薄膜，其特征在于，所述晶片加工系统包括：
    刻蚀单元，所述刻蚀单元输出待分离的多个所述晶片；以及
    分离单元，所述分离单元包括至少两个第一载台以及机械手组件，所述第一载台位于所述刻蚀单元一侧，所述第一载台用于承载待分离的多个所述晶片，所述机械手组件在所有所述第一载台的各位置上轮流切换，并将所述第一载台上的多个所述晶片的所述薄膜从所述衬底上分离。
  2. 如权利要求1所述的晶片加工系统，其特征在于，还包括：
    组装单元，位于所述分离单元一侧，用于将分离后的所述薄膜与框架组装。
  3. 如权利要求2所述的晶片加工系统，其特征在于，所述刻蚀单元、所述分离单元以及所述组装单元沿第一横向布置，所述机械手组件包括：
    第一机械手，用于拾取所述第一载台上的多个所述晶片并将多个所述晶片的所述薄膜从所述衬底上剥离；以及
    第一线性模组，沿所述第一横向延伸，所述第一机械手设置在所述第一线性模组上，所述第一线性模组带动所述第一机械手在所述至少两个第一载台与所述组装单元之间运动。
  4. 如权利要求3所述的晶片加工系统，其特征在于，所述分离单元的至少两个第一载台沿与所述第一横向垂直的第二横向布置，所述机械手组件还包括：
    第二线性模组，沿所述第二横向延伸，所述第一线性模组设置在所述第二线性模组上，所述第二线性模组带动所述第一线性模组以及所述第一机械手在所有所述第一载台的各位置上轮流切换。
  5. 如权利要求3所述的晶片加工系统，其特征在于，所述第一机 械手包括并排设置的多个分离子单元，每个所述分离子单元用于拾取所述第一载台上的一个所述晶片并将所述晶片的所述薄膜从所述衬底上剥离。
  6. 如权利要求2所述的晶片加工系统，其特征在于，所述组装单元包括：
    第二载台，位于所述分离单元一侧，用于承载分离后的所述薄膜；
    至少一个第一图像传感器，设置在所述第二载台上方，用于对分离后的所述薄膜定位；
    第三载台，位于所述第二载台一侧，用于承载框架；
    至少一个第二图像传感器，位于所述第三载台上方，用于对所述框架定位；以及
    第二机械手，设置在所述第二载台与所述第三载台之间，用于将所述第二载台上的所述薄膜移至所述第三载台上并与所述框架组装。
  7. 如权利要求6所述的晶片加工系统，其特征在于，所述第二载台为旋转载台，所述第二载台旋转使得所述薄膜在多个位置上切换，所述多个位置包括所述至少一个第一图像传感器的图像采集位置、所述第二机械手的拾取位置。
  8. 如权利要求6所述的晶片加工系统，其特征在于，所述第二机械手与所述至少一个第一图像传感器信号连接，用于根据所述至少一个第一图像传感器的图像信号修正所述薄膜在所述第三载台上的放置位置。
  9. 如权利要求6所述的晶片加工系统，其特征在于，所述组装单元还包括：
    第三线性模组，与所述第三载台连接，用于将完成组装的所述薄膜输出至系统外。
  10. 如权利要求1至9任一项所述的晶片加工系统，其特征在于，所述薄膜为光伏柔性薄膜。
PCT/CN2018/093394 2018-04-27 2018-06-28 晶片加工系统 WO2019205276A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810394867.8A CN110416351A (zh) 2018-04-27 2018-04-27 晶片加工系统
CN201810394867.8 2018-04-27

Publications (1)

Publication Number Publication Date
WO2019205276A1 true WO2019205276A1 (zh) 2019-10-31

Family

ID=68292934

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/093394 WO2019205276A1 (zh) 2018-04-27 2018-06-28 晶片加工系统

Country Status (5)

Country Link
US (1) US20190334054A1 (zh)
KR (1) KR20190125142A (zh)
CN (1) CN110416351A (zh)
TW (1) TWI667808B (zh)
WO (1) WO2019205276A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115938972A (zh) * 2021-08-18 2023-04-07 北京北方华创微电子装备有限公司 半导体腔室及半导体工艺设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612068A (en) * 1994-03-14 1997-03-18 Leybold Aktiengesellschaft Apparatus for the transfer of substrates
CN102272913A (zh) * 2009-01-13 2011-12-07 株式会社艾克萨 晶片分离装置、晶片分离输送装置、晶片分离方法、晶片分离输送方法以及用于太阳能电池的晶片分离输送方法
CN104576452A (zh) * 2013-10-22 2015-04-29 株式会社迪思科 晶片加工系统
CN105529278A (zh) * 2014-09-29 2016-04-27 盛美半导体设备（上海）有限公司 加工半导体结构的装置
JP2017163088A (ja) * 2016-03-11 2017-09-14 東芝メモリ株式会社 基板処理装置及び基板処理装置の制御方法
CN107470783A (zh) * 2016-06-08 2017-12-15 株式会社迪思科 晶片加工系统

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281051A (ja) * 2006-04-04 2007-10-25 Miraial Kk 半導体ウエハのチップ加工方法
JP2008053372A (ja) * 2006-08-23 2008-03-06 Sumitomo Chemical Co Ltd 半導体デバイスの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612068A (en) * 1994-03-14 1997-03-18 Leybold Aktiengesellschaft Apparatus for the transfer of substrates
CN102272913A (zh) * 2009-01-13 2011-12-07 株式会社艾克萨 晶片分离装置、晶片分离输送装置、晶片分离方法、晶片分离输送方法以及用于太阳能电池的晶片分离输送方法
CN104576452A (zh) * 2013-10-22 2015-04-29 株式会社迪思科 晶片加工系统
CN105529278A (zh) * 2014-09-29 2016-04-27 盛美半导体设备（上海）有限公司 加工半导体结构的装置
JP2017163088A (ja) * 2016-03-11 2017-09-14 東芝メモリ株式会社 基板処理装置及び基板処理装置の制御方法
CN107470783A (zh) * 2016-06-08 2017-12-15 株式会社迪思科 晶片加工系统

Also Published As

Publication number Publication date
US20190334054A1 (en) 2019-10-31
TWI667808B (zh) 2019-08-01
KR20190125142A (ko) 2019-11-06
CN110416351A (zh) 2019-11-05
TW201946289A (zh) 2019-12-01

Similar Documents

Publication Publication Date Title
US20230115122A1 (en) Method of bonding thin substrates
CN100377296C (zh) 用于晶片分离的剥离装置
JP4510095B2 (ja) 固体撮像素子モジュールの製造方法
KR101548173B1 (ko) 실리콘 다이렉트 본딩(ｓｄｂ)을 이용한 임시 웨이퍼 임시 본딩 방법, 및 그 본딩 방법을 이용한 반도체 소자 및 반도체 소자 제조 방법
US20080302481A1 (en) Method and apparatus for debonding of structures which are bonded together, including (but not limited to) debonding of semiconductor wafers from carriers when the bonding is effected by double-sided adhesive tape
US20120210554A1 (en) Apparatus and method for picking up and mounting bare dies
US8026126B2 (en) Apparatus and method for thin die detachment
TW200402828A (en) Method and apparatus for picking up semiconductor chip and suction and exfoliation tool used therefor
US9603294B2 (en) Apparatus for mounting semiconductor chips
JP6621874B2 (ja) 独立駆動式フィルム分離機構
JP2013084884A (ja) 基板処理装置および基板処理方法
KR20150124648A (ko) 다이 픽업 유닛, 이를 포함하는 다이 본딩 장치 및 방법
WO2019205276A1 (zh) 晶片加工系统
US10381254B2 (en) Wafer debonding and cleaning apparatus and method
US8728933B1 (en) Laser cutting and chemical edge clean for thin-film solar cells
US20080092360A1 (en) Thin semiconductor chip pickup apparatus and method
US9390949B2 (en) Wafer debonding and cleaning apparatus and method of use
TW201110264A (en) Bernoulli gripper
US8012307B2 (en) Separating device and method thereof
KR101999054B1 (ko) 웨이퍼 박리 및 세척 장치 및 방법
KR20100100270A (ko) 지지 유닛 및 이를 포함하는 웨이퍼 이송 장치
CN111162037B (zh) 芯片转移到晶圆的方法
CN208240708U (zh) 晶片加工系统
KR102502909B1 (ko) 정전척에 사용되는 탈착 기기, 자동 탈착 시스템 및 그 탈착 방법
JP2003086540A (ja) 半導体装置の製造方法及びその製造装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18915979

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 09-03-2021)

122 Ep: pct application non-entry in european phase

Ref document number: 18915979

Country of ref document: EP

Kind code of ref document: A1