WO2019205268A1 - 一种oled显示装置及其制备方法 - Google Patents

一种oled显示装置及其制备方法 Download PDF

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WO2019205268A1
WO2019205268A1 PCT/CN2018/092351 CN2018092351W WO2019205268A1 WO 2019205268 A1 WO2019205268 A1 WO 2019205268A1 CN 2018092351 W CN2018092351 W CN 2018092351W WO 2019205268 A1 WO2019205268 A1 WO 2019205268A1
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layer
barrier layer
buffer layer
island
display device
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French (fr)
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黄辉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US16/112,025 priority Critical patent/US10600821B2/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • the present invention relates to the field of display technologies, and in particular, to an OLED display device and a method for fabricating the same.
  • OLED Organic Light-Emitting Diode
  • the structure of the OLED display device is performed by using a thin film package as shown in FIG. 1, and 1', 2', 3', 4', 5', 6', 7', 8' respectively represent a glass substrate and a TFT.
  • TFT Thin Film Transistor
  • pixel layer first barrier layer, first buffer layer, second barrier layer, second buffer layer, third barrier layer, but due to film encapsulation barrier layer and buffer layer It is thin, and there is stress between the layers. Therefore, the barrier layer and the buffer layer do not achieve the desired effect of blocking water oxygen. The water and oxygen permeability is high, and the barrier layer and the buffer layer are more likely to be broken. The package is invalid.
  • the present invention provides an OLED display device and a preparation method thereof, which can prolong the path of water vapor entering the OLED display device, enhance the absorption of water vapor, and enhance the packaging effect of the OLED display device.
  • the invention provides a method for preparing an OLED display device, comprising the following steps:
  • barrier layer Forming a barrier layer and a buffer layer over the TFT layer, and the barrier layer covers the plurality of OLED devices;
  • a plurality of island-like structures are prepared on the barrier layer or on the buffer layer, and the plurality of island-like structures are located on the barrier layer or a non-light-emitting region on the buffer layer.
  • a plurality of island structures are prepared on the barrier layer or on the buffer layer, specifically:
  • Patterning the barrier layer or the buffer layer by one of photolithography, transfer, and laser etching to obtain the plurality of island structures, or by means of inkjet printing on the barrier The plurality of island structures are prepared on the layer or the buffer layer.
  • the material of the island-like structure is an inorganic nanomaterial.
  • the shape of the island-like structure is one of a pyramid shape, a lens shape, and a particle shape.
  • a barrier layer and a buffer layer are prepared over the TFT layer, specifically:
  • a first barrier layer, a first buffer layer, a second barrier layer, a second buffer layer, and a third barrier layer are sequentially formed over the TFT layer.
  • a plurality of island structures are prepared on the barrier layer or on the buffer layer, specifically:
  • the invention also provides a preparation method of an OLED display device, comprising the following steps:
  • barrier layer Forming a barrier layer and a buffer layer over the TFT layer, and the barrier layer covers the plurality of OLED devices;
  • a shape of the island structure One of a pyramid shape, a lens shape, and a particle shape;
  • Patterning the barrier layer or the buffer layer by one of photolithography, transfer, and laser etching to obtain the plurality of island structures, or by means of inkjet printing on the barrier The plurality of island structures are prepared on the layer or the buffer layer.
  • the material of the island-like structure is an inorganic nanomaterial.
  • a barrier layer and a buffer layer are prepared over the TFT layer, specifically:
  • a first barrier layer, a first buffer layer, a second barrier layer, a second buffer layer, and a third barrier layer are sequentially formed over the TFT layer.
  • a plurality of island structures are prepared on the barrier layer or on the buffer layer, specifically:
  • the present invention also provides an OLED display device comprising: a glass substrate, a TFT layer on the glass substrate, a plurality of OLED devices located above the TFT layer, a barrier layer and a buffer layer above the TFT layer, And the barrier layer covers the plurality of OLED devices;
  • a plurality of island structures are disposed on the barrier layer or the buffer layer, and the plurality of island structures are located on the barrier layer or a non-light emitting region on the buffer layer.
  • the shape of the island-like structure is one of a pyramid shape, a lens shape, and a particle shape.
  • the material of the island structure is the same as the material of the barrier layer or the buffer layer, or the material of the island structure is an inorganic nano material.
  • the barrier layer comprises a first barrier layer, a second barrier layer and a third barrier layer, the buffer layer comprising a first buffer layer and a second buffer layer;
  • the first barrier layer, the first buffer layer, the second barrier layer, the second buffer layer, and the third barrier layer are sequentially stacked in a direction away from the TFT layer.
  • the invention has the following beneficial effects: the invention can prolong the path of water vapor entering the OLED display device by reinforcing a plurality of island structures on the barrier layer or the buffer layer, enhance the absorption of water vapor, reduce the permeability of water vapor and oxygen, and enhance
  • the packaging effect of the OLED display device can simultaneously enhance the stress of the OLED display device and effectively reduce the film damage caused by the stress of the display device.
  • FIG. 1 is a schematic structural view of an OLED display device in the background art provided by the present invention.
  • FIG. 2 is a schematic view showing the structure of preparing a TFT layer, an OLED device, and a first barrier layer on a glass substrate provided by the present invention.
  • FIG 3 is a schematic view of the preparation of a plurality of island-like structures on a first barrier layer provided by the present invention.
  • FIG. 4 is a schematic structural view of an OLED display device provided by the present invention.
  • Figure 5 is a schematic illustration of a particle-shaped island structure provided by the present invention.
  • Fig. 6 is a schematic view showing the shape of an island of a lens shape provided by the present invention.
  • the present invention provides a method for fabricating an OLED (Organic Light-Emitting Diode) display device, the method comprising the following steps:
  • a TFT (Thin Film Transistor) layer 2 is prepared on the glass substrate 1;
  • a plurality of island structures are prepared on the barrier layer or on the buffer layer, and the plurality of island structures are located on the barrier layer or the non-light emitting regions on the buffer layer.
  • a plurality of island-like structures 5 are prepared on the first barrier layer 4 on the TFT layer 2.
  • the non-light-emitting region 41 is a region on the barrier layer outside the region directly above the OLED device 3, that is, as shown by the dotted frame region in FIG. 2; correspondingly, the light-emitting region is located on the barrier layer on the OLED device 3.
  • the light emitting region is also a pixel region corresponding to the OLED display device.
  • a plurality of island structures are prepared on the barrier layer or on the buffer layer, specifically:
  • the barrier layer or the buffer layer is patterned by one of photolithography, transfer, and laser etching to obtain a plurality of island structures 5, or to be prepared on the barrier layer or the buffer layer by inkjet printing.
  • Island structure 5 The photolithography is performed by coating the photoresist, exposing and developing, and the laser etching is directly etching by laser irradiation at a place where etching is required.
  • the material of the island-like structures 5 is an inorganic nanomaterial.
  • a barrier layer and a buffer layer are prepared over the TFT layer 2, specifically:
  • a first barrier layer 4, a first buffer layer 6, a second barrier layer 7, a second buffer layer 8, and a third barrier layer 9 are sequentially formed over the TFT layer 2.
  • a plurality of island structures are prepared on the barrier layer or on the buffer layer, specifically:
  • a plurality of island structures 5 are prepared on any one of the first barrier layer 4, the first buffer layer 6, the second barrier layer 7, the second buffer layer 8, and the third barrier layer 9.
  • a plurality of island-like structures 5 are prepared on the first barrier layer 4, and in other embodiments, a plurality of island-like structures 5 may be prepared on the first buffer layer 6 or the second barrier layer 7.
  • the first barrier layer 4, the first buffer layer 6, the second barrier layer 7, the second buffer layer 8, and the third barrier layer 9 are generally prepared by chemical vapor deposition, when the first barrier layer 4 is used When a plurality of island-like structures 5 are prepared, the first buffer layer 6, the second barrier layer 7, the second buffer layer 8, and the third barrier layer 9 are all convex upwards corresponding to the island-like structure 5.
  • the shape of the island-like structure 5 is one of a pyramid shape, a lens shape, and a particle shape. As shown in FIG. 3, the shape of the island-like structure 5 is a pyramid shape. As shown in FIG. 5, the shape of the island-like structure 5 may be a particle shape. As shown in FIG. 6, the shape of the island-like structure 5 may also be a lens shape.
  • the particle-shaped island structure 5 can be prepared by inkjet printing. When the island structure 5 is prepared by inkjet printing, the material of the island structure 5 is selected to use inorganic nano materials such as magnesium oxide, zinc oxide, and the like. One of the titanium dioxides is simple in process and low in cost when prepared by using inorganic nanomaterials.
  • the pyramid-shaped island-like structure 5 and the lens-shaped island-like structure 5 can be prepared by photolithography, transfer or laser etching.
  • the present invention also provides an OLED display device.
  • the OLED display device includes: a glass substrate 1, a TFT layer 2 on the glass substrate 1, a plurality of OLED devices 3 located above the TFT layer 2, and a TFT.
  • a barrier layer and a buffer layer above layer 2, and the barrier layer covers a plurality of OLED devices 3.
  • the barrier layer includes a first barrier layer 4, a second barrier layer 7, and a third barrier layer 9, the buffer layer including a first buffer layer 6 and a second buffer layer 8.
  • the first barrier layer 4, the first buffer layer 6, the second barrier layer 7, the second buffer layer 8, and the third barrier layer 9 are sequentially stacked in a direction away from the TFT layer 2.
  • a plurality of island-like structures 5 are disposed on the barrier layer or the buffer layer, and the plurality of island-like structures 5 are located on the barrier layer or the non-light-emitting region 41 on the buffer layer.
  • a plurality of island-like structures 5 are provided on the first barrier layer 4.
  • the shape of the island-like structure 5 is one of a pyramid shape, a lens shape, and a particle shape.
  • the material of the island structure 5 is the same as the material of the barrier layer or the buffer layer, or the material of the island structure 5 is an inorganic nano material.
  • the present invention can prolong the path of water vapor entering the OLED display device by reinforcing a plurality of island structures 5 on the barrier layer or the buffer layer, enhance water vapor absorption, reduce water vapor and oxygen permeability, and enhance the OLED display device.
  • the encapsulation effect can simultaneously enhance the stress of the OLED display device, effectively reduce the film damage caused by the stress of the display device, and prepare the island-like structure 5 in the non-light-emitting region 41, and the light-emitting effect is not adversely affected (such as total reflection, light absorption). Wait).

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一种OLED显示装置及其制备方法,该方法包括下述步骤:在玻璃基板(1)上制备TFT层(2);在TFT层(2)上方制备多个OLED器件(3);在TFT层(2)上方制备屏障层(4、7、9)和缓冲层(6、8),且屏障层(4、7、9)覆盖多个OLED器件(3);在屏障层(4、7、9)上或者缓冲层(6、8)上制备多个岛状结构(5),且多个岛状结构(5)位于屏障层(4、7、9)或者缓冲层(6、8)上的非发光区域。其延长水汽进入OLED显示装置的路径,加强水汽的吸收,增强OLED显示装置的封装效果。

Description

一种OLED显示装置及其制备方法
本申请要求于2018年4月23日提交中国专利局、申请号为201810365397.2、发明名称为“一种OLED显示装置及其制备方法”的中国专利申请的优先权,上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示技术领域,尤其涉及一种OLED显示装置及其制备方法。
背景技术
在目前照明和显示领域中,由于OLED(Organic Light-Emitting Diode,有机发光二极管)自身的特点,如低启动电压,轻薄,自发光等特点,越来越多的被广泛研究用于开发照明产品以及面板行业中,以达到低能耗,轻薄和面光源等需求。目前OLED柔性显示面板由于可挠,轻薄,且自发光的特点,导致越来越多的OLED柔性显示产品诞生。
而目前OLED显示装置的结构是采用如图1所示的薄膜封装的方式进行,1’、2’、3’、4’、5’、6’、7’、8’分别表示玻璃基板、TFT(Thin Film Transistor,薄膜晶体管)层、像素层、第一屏障层、第一缓冲层、第二屏障层、第二缓冲层、第三屏障层,但是由于薄膜封装屏障层和缓冲层等膜层较薄,且存在膜层间的应力,因此,屏障层和缓冲层阻隔水氧的能力并没有达到需要的效果,水氧渗透率较高,且屏障层和缓冲层膜层较容易出现断裂导致封装失效。
发明内容
为解决上述技术问题,本发明提供一种OLED显示装置及其制备方法,可以延长水汽进入OLED显示装置的路径,加强水汽的吸收,增强OLED显示装置的封装效果。
本发明提供的一种OLED显示装置的制备方法,包括下述步骤:
在玻璃基板上制备TFT层;
在所述TFT层上方制备多个OLED器件;
在所述TFT层上方制备屏障层和缓冲层,且所述屏障层覆盖所述多个OLED器件;
在所述屏障层上或者所述缓冲层上制备多个岛状结构,且所述多个岛状结构位于所述屏障层或者所述缓冲层上的非发光区域。
优选地,在所述屏障层上或者所述缓冲层上制备多个岛状结构,具体为:
通过光刻、转印、激光刻蚀中的一种方式对所述屏障层或者所述缓冲层进行图案化处理,得到所述多个岛状结构,或者通过喷墨打印的方式在所述屏障层或者所述缓冲层上制备所述多个岛状结构。
优选地,当通过喷墨打印的方式在所述屏障层或者所述缓冲层上制备所述多个岛状结构时,所述岛状结构的材料为无机纳米材料。
优选地,所述岛状结构的形状为角锥形状、透镜形状以及颗粒形状中的一种。
优选地,在所述TFT层上方制备屏障层和缓冲层,具体为:
在所述TFT层上方依次制备第一屏障层、第一缓冲层、第二屏障层、第二缓冲层以及第三屏障层。
优选地,在所述屏障层上或者所述缓冲层上制备多个岛状结构,具体为:
在所述第一屏障层、所述第一缓冲层、所述第二屏障层、所述第二缓冲层以及所述第三屏障层中的任意一个膜层上制备所述多个岛状结构。
本发明还提供一种OLED显示装置的制备方法,包括下述步骤:
在玻璃基板上制备TFT层;
在所述TFT层上方制备多个OLED器件;
在所述TFT层上方制备屏障层和缓冲层,且所述屏障层覆盖所述多个OLED器件;
在所述屏障层上或者所述缓冲层上制备多个岛状结构,且所述多个岛状结构位于所述屏障层或者所述缓冲层上的非发光区域;所述岛状结构的形状为角锥形状、透镜形状以及颗粒形状中的一种;
在所述屏障层上或者所述缓冲层上制备多个岛状结构,具体为:
通过光刻、转印、激光刻蚀中的一种方式对所述屏障层或者所述缓冲层 进行图案化处理,得到所述多个岛状结构,或者通过喷墨打印的方式在所述屏障层或者所述缓冲层上制备所述多个岛状结构。
优选地,当通过喷墨打印的方式在所述屏障层或者所述缓冲层上制备所述多个岛状结构时,所述岛状结构的材料为无机纳米材料。
优选地,在所述TFT层上方制备屏障层和缓冲层,具体为:
在所述TFT层上方依次制备第一屏障层、第一缓冲层、第二屏障层、第二缓冲层以及第三屏障层。
优选地,在所述屏障层上或者所述缓冲层上制备多个岛状结构,具体为:
在所述第一屏障层、所述第一缓冲层、所述第二屏障层、所述第二缓冲层以及所述第三屏障层中的任意一个膜层上制备所述多个岛状结构。
本发明还提供一种OLED显示装置,包括:玻璃基板、位于所述玻璃基板上的TFT层、位于所述TFT层上方的多个OLED器件、位于所述TFT层上方的屏障层和缓冲层,且所述屏障层覆盖所述多个OLED器件;
在所述屏障层或者所述缓冲层上设置有多个岛状结构,且所述多个岛状结构位于所述屏障层或者所述缓冲层上的非发光区域。
优选地,所述岛状结构的形状为角锥形状、透镜形状以及颗粒形状中的一种。
优选地,所述岛状结构的材料与所述屏障层或者所述缓冲层的材料相同,或者岛状结构的材料为无机纳米材料。
优选地,所述屏障层包括第一屏障层、第二屏障层以及第三屏障层,所述缓冲层包括第一缓冲层以及第二缓冲层;
所述第一屏障层、所述第一缓冲层、所述第二屏障层、所述第二缓冲层以及所述第三屏障层在远离所述TFT层的方向上依次层叠。
实施本发明,具有如下有益效果:本发明通过在屏障层或者缓冲层上制备多个岛状结构,可以延长水汽进入OLED显示装置的路径,加强水汽的吸收,降低水汽和氧的渗透率,增强OLED显示装置的封装效果,同时可以增强OLED显示装置的应力,有效减少显示装置应力导致的薄膜损伤。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实 施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本发明提供的背景技术中OLED显示装置的结构示意图。
图2是本发明提供的在玻璃基板上制备TFT层、OLED器件以及第一屏障层的结构示意图。
图3是本发明提供的在第一屏障层上制备多个岛状结构的示意图。
图4是本发明提供的OLED显示装置的结构示意图。
图5是本发明提供的颗粒形状的岛状结构的示意图。
图6是本发明提供的透镜形状的岛状结构示意图。
具体实施方式
本发明提供一种OLED(Organic Light-Emitting Diode,有机发光二极管)显示装置的制备方法,该方法包括下述步骤:
如图2所示,在玻璃基板1上制备TFT(Thin Film Transistor,薄膜晶体管)层2;
在TFT层2上方制备多个OLED器件3;
在TFT层2上方制备屏障层和缓冲层,且屏障层覆盖多个OLED器件3;
在屏障层上或者缓冲层上制备多个岛状结构,且多个岛状结构位于屏障层或者缓冲层上的非发光区域。例如,如图3所示,在TFT层2上的第一屏障层4上制备多个岛状结构5。如图2所示,非发光区域41为屏障层上位于OLED器件3正上方区域之外的区域,即如图2中虚线框区域所示;相应的,发光区域为屏障层上位于OLED器件3正上方的区域。发光区域也即是对应了OLED显示装置的像素区域。
进一步地,在屏障层上或者缓冲层上制备多个岛状结构,具体为:
通过光刻、转印、激光刻蚀中的一种方式对屏障层或者缓冲层进行图案化处理,得到多个岛状结构5,或者通过喷墨打印的方式在屏障层或者缓冲层上制备多个岛状结构5。需要说明的是,光刻是通过涂布光阻、曝光显影后进行刻蚀,而激光刻蚀是对需要刻蚀的地方采用激光照射直接刻蚀。
进一步地,当通过喷墨打印的方式在屏障层或者缓冲层上制备多个岛状 结构5时,岛状结构5的材料为无机纳米材料。
如图4所示,在TFT层2上方制备屏障层和缓冲层,具体为:
在TFT层2上方依次制备第一屏障层4、第一缓冲层6、第二屏障层7、第二缓冲层8以及第三屏障层9。
进一步地,在屏障层上或者缓冲层上制备多个岛状结构,具体为:
在第一屏障层4、第一缓冲层6、第二屏障层7、第二缓冲层8以及第三屏障层9中的任意一个膜层上制备多个岛状结构5。在图3中,是在第一屏障层4上制备多个岛状结构5,在其他实施例中,可以在第一缓冲层6或者第二屏障层7上制备多个岛状结构5。
由于第一屏障层4、第一缓冲层6、第二屏障层7、第二缓冲层8以及第三屏障层9一般均是采用化学气相沉积的方法进行制备,因此当第一屏障层4上制备了多个岛状结构5时,在第一缓冲层6、第二屏障层7、第二缓冲层8以及第三屏障层9对应岛状结构5的地方均向上凸出。
当有水汽进入OLED显示装置时,水汽在经过第一缓冲层6、第二屏障层7、第二缓冲层8以及第三屏障层9对应岛状结构5的地方均向上凸出的位置,以及水汽经过岛状结构5区域时,水汽进入OLED显示装置的路径会延长,进而加强水汽的吸收,降低水汽和氧的渗透率,增强OLED显示装置的封装效果,同时可以增强OLED显示装置的应力,有效减少显示装置应力导致的薄膜损伤,在非发光区域41制备岛状结构5,也不会使出光效果受到不良影响(如全反射,光吸收等)。
岛状结构5的形状为角锥形状、透镜形状以及颗粒形状中的一种。如图3所示,岛状结构5的形状为角锥形状。如图5所示,岛状结构5的形状可以是颗粒形状。如图6所示,岛状结构5的形状还可以是透镜形状。颗粒形状的岛状结构5可以通过喷墨打印的方式制备,当采用喷墨打印的方式制备岛状结构5时,岛状结构5的材料选择使用无机纳米材料,例如:氧化镁、氧化锌以及二氧化钛中的一种,采用无机纳米材料制备时,工艺简单且成本低。角锥形状的岛状结构5和透镜形状的岛状结构5可以通过光刻、转印或者激光刻蚀的方式制备。
本发明还提供一种OLED显示装置,如图4所示,该OLED显示装置 包括:玻璃基板1、位于玻璃基板1上的TFT层2、位于TFT层2上方的多个OLED器件3、位于TFT层2上方的屏障层和缓冲层,且屏障层覆盖多个OLED器件3。
屏障层包括第一屏障层4、第二屏障层7以及第三屏障层9,缓冲层包括第一缓冲层6以及第二缓冲层8。
第一屏障层4、第一缓冲层6、第二屏障层7、第二缓冲层8以及第三屏障层9在远离TFT层2的方向上依次层叠。
在屏障层或者缓冲层上设置有多个岛状结构5,且多个岛状结构5位于屏障层或者缓冲层上的非发光区域41。例如在第一屏障层4上设置有多个岛状结构5。
进一步地,岛状结构5的形状为角锥形状、透镜形状以及颗粒形状中的一种。
进一步地,岛状结构5的材料与屏障层或者缓冲层的材料相同,或者岛状结构5的材料为无机纳米材料。
综上所述,本发明通过在屏障层或者缓冲层上制备多个岛状结构5,可以延长水汽进入OLED显示装置的路径,加强水汽的吸收,降低水汽和氧的渗透率,增强OLED显示装置的封装效果,同时可以增强OLED显示装置的应力,有效减少显示装置应力导致的薄膜损伤,在非发光区域41制备岛状结构5,也不会使出光效果受到不良影响(如全反射,光吸收等)。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。

Claims (14)

  1. 一种OLED显示装置的制备方法,其中,包括下述步骤:
    在玻璃基板上制备TFT层;
    在所述TFT层上方制备多个OLED器件;
    在所述TFT层上方制备屏障层和缓冲层,且所述屏障层覆盖所述多个OLED器件;
    在所述屏障层上或者所述缓冲层上制备多个岛状结构,且所述多个岛状结构位于所述屏障层或者所述缓冲层上的非发光区域。
  2. 根据权利要求1所述的OLED显示装置的制备方法,其中,在所述屏障层上或者所述缓冲层上制备多个岛状结构,具体为:
    通过光刻、转印、激光刻蚀中的一种方式对所述屏障层或者所述缓冲层进行图案化处理,得到所述多个岛状结构,或者通过喷墨打印的方式在所述屏障层或者所述缓冲层上制备所述多个岛状结构。
  3. 根据权利要求2所述的OLED显示装置的制备方法,其中,当通过喷墨打印的方式在所述屏障层或者所述缓冲层上制备所述多个岛状结构时,所述岛状结构的材料为无机纳米材料。
  4. 根据权利要求1所述的OLED显示装置的制备方法,其中,所述岛状结构的形状为角锥形状、透镜形状以及颗粒形状中的一种。
  5. 根据权利要求1所述的OLED显示装置的制备方法,其中,在所述TFT层上方制备屏障层和缓冲层,具体为:
    在所述TFT层上方依次制备第一屏障层、第一缓冲层、第二屏障层、第二缓冲层以及第三屏障层。
  6. 根据权利要求5所述的OLED显示装置的制备方法,其中,在所述屏障层上或者所述缓冲层上制备多个岛状结构,具体为:
    在所述第一屏障层、所述第一缓冲层、所述第二屏障层、所述第二缓冲层以及所述第三屏障层中的任意一个膜层上制备所述多个岛状结构。
  7. 一种OLED显示装置的制备方法,其中,包括下述步骤:
    在玻璃基板上制备TFT层;
    在所述TFT层上方制备多个OLED器件;
    在所述TFT层上方制备屏障层和缓冲层,且所述屏障层覆盖所述多个OLED器件;
    在所述屏障层上或者所述缓冲层上制备多个岛状结构,且所述多个岛状结构位于所述屏障层或者所述缓冲层上的非发光区域;所述岛状结构的形状为角锥形状、透镜形状以及颗粒形状中的一种;
    在所述屏障层上或者所述缓冲层上制备多个岛状结构,具体为:
    通过光刻、转印、激光刻蚀中的一种方式对所述屏障层或者所述缓冲层进行图案化处理,得到所述多个岛状结构,或者通过喷墨打印的方式在所述屏障层或者所述缓冲层上制备所述多个岛状结构。
  8. 根据权利要求7所述的OLED显示装置的制备方法,其中,当通过喷墨打印的方式在所述屏障层或者所述缓冲层上制备所述多个岛状结构时,所述岛状结构的材料为无机纳米材料。
  9. 根据权利要求7所述的OLED显示装置的制备方法,其中,在所述TFT层上方制备屏障层和缓冲层,具体为:
    在所述TFT层上方依次制备第一屏障层、第一缓冲层、第二屏障层、第二缓冲层以及第三屏障层。
  10. 根据权利要求9所述的OLED显示装置的制备方法,其中,在所述屏障层上或者所述缓冲层上制备多个岛状结构,具体为:
    在所述第一屏障层、所述第一缓冲层、所述第二屏障层、所述第二缓冲层以及所述第三屏障层中的任意一个膜层上制备所述多个岛状结构。
  11. 一种OLED显示装置,其中,包括:玻璃基板、位于所述玻璃基板上的TFT层、位于所述TFT层上方的多个OLED器件、位于所述TFT层上方的屏障层和缓冲层,且所述屏障层覆盖所述多个OLED器件;
    在所述屏障层或者所述缓冲层上设置有多个岛状结构,且所述多个岛状结构位于所述屏障层或者所述缓冲层上的非发光区域。
  12. 根据权利要求11所述的OLED显示装置,其中,所述岛状结构的形状为角锥形状、透镜形状以及颗粒形状中的一种。
  13. 根据权利要求11所述的OLED显示装置,其中,所述岛状结构的 材料与所述屏障层或者所述缓冲层的材料相同,或者岛状结构的材料为无机纳米材料。
  14. 根据权利要求11所述的OLED显示装置,其中,所述屏障层包括第一屏障层、第二屏障层以及第三屏障层,所述缓冲层包括第一缓冲层以及第二缓冲层;
    所述第一屏障层、所述第一缓冲层、所述第二屏障层、所述第二缓冲层以及所述第三屏障层在远离所述TFT层的方向上依次层叠。
PCT/CN2018/092351 2018-04-23 2018-06-22 一种oled显示装置及其制备方法 Ceased WO2019205268A1 (zh)

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