Classifications

• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B3/00—Ohmic-resistance heating
  • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
  • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B3/00—Ohmic-resistance heating
  • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
  • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
  • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
  • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
  • H05K1/0212—Printed circuits or mounted components having integral heating means
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
  • H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/46—Manufacturing multilayer circuits
  • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
  • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
  • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
  • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0431—Apparatus for thermal treatment
  • H10P72/0432—Apparatus for thermal treatment mainly by conduction

Definitions

• the present disclosure relates generally to electric heaters, and more particularly to ceramic substrate heaters and methods of manufacturing the same.
• a typical ceramic heater generally includes a ceramic substrate and a resistive heating element embedded within the ceramic substrate. Heat generated by the resistive heating element can be rapidly transferred to a heating target disposed proximate the ceramic substrate because of excellent heat conductivity of ceramic materials.
• Ceramic materials are known to be difficult to be bonded to metallic materials due to poor wettability of ceramic materials. Many of the ceramic materials and the metallic materials are non-wetting, making it difficult to cause a molten metal to flow into the pores of a ceramic material against capillary pressure to provide a good bonding therebetween.
• the bonding between the ceramic substrate and the resistive heating element may get worse when the coefficient of thermal expansion (CTE) of the resistive heating element is incompatible with the CTE of the ceramic substrate. Therefore, cracks or air gaps may be generated at the interface between the ceramic substrate and the resistive heating element, thereby adversely affecting the heat transfer from the resistive heating element through the ceramic material to the heating target.
• CTE coefficient of thermal expansion
• a heater comprises a ceramic substrate and a heating layer made from an aluminum material.
• the heater comprises a routing layer and a plurality of first vias connecting the heating layer to the routing layer.
• the routing layer and the plurality of first vias are made of the aluminum material.
• the heater further comprises a plurality of second vias connecting the routing layer to a surface of the ceramic substrate and the plurality of second vias are made of the aluminum material.
• the ceramic substrate is made of aluminum nitride (AIN).
• the ceramic substrate includes a plurality of plate members that are bonded by the aluminum material.
• the plurality of plate members includes a first plate member in which the heating layer is disposed and a second plate member through which a plurality of first vias made from the aluminum material extend.
• a routing layer is disposed in the second plate member and is in contact with the plurality of first vias.
• the plurality of plate members includes a first plate member in which the heating layer is disposed, a second plate member through which a plurality of first vias extend, and a third plate member through which a plurality of second vias extend.
• the plurality of first bias and the plurality of second vias are made from the aluminum material
• the third plate member is bonded to the second plate member by the aluminum material in the plurality of second vias.
• the routing layer is disposed in the second plate member and is in contact with the plurality of first vias and the plurality of second vias.
• the heater includes terminal wires bonded to the plurality of second vias.
• a surface roughness of adjacent surfaces of the plurality of plate members is between 100 nm and 5 pm.
• the ceramic substrate includes a first plate member and a second plate member, the heating layer is disposed in the first plate member and a routing layer and a plurality of first vias are disposed in the second plate member.
• the first plate member and the second plate member are made of aluminum nitride, the heating layer, the routing layer and the plurality of first vias are made of an aluminum material and the first plate member and the second plate member are bonded together by the aluminum material.
• a third plate member is included and a plurality of second vias extend through the third plate member.
• the third plate member is made of aluminum nitride
• the plurality of second vias is made from the aluminum material
• the third plate member is bonded to the second plate member by the aluminum material in the plurality of second vias.
• FIG. 1 is a cross-sectional view of a ceramic heater constructed in accordance with the teachings of the present disclosure
• FIG. 2 is a flow diagram of a method of manufacturing a ceramic heater in accordance with the teachings of the present disclosure
• FIG. 3A depicts a step of preparing a first plate member, a second plate member, and a third plate member with a first trench, first via holes, and second via holes, respectively, in accordance with the teachings of the present disclosure
• FIG. 3B depicts a step of bonding the second plate member to the first plate member in accordance with the teachings of the present disclosure
• FIG. 3C depicts a step of bonding a third plate member to the assembly of the first and second plate members in accordance with the teachings of the present disclosure
• FIG. 3D depicts a step of bonding termination wires to second vias in a third plate member in accordance with the teachings of the present disclosure.
• FIG. 4 is a perspective view of a variant of a first plate member with a plurality of heating layers and alignment holes and constructed in accordance with the teachings of the present disclosure.
• a ceramic heater 10 constructed in accordance with the teachings of the present disclosure includes a substrate 12 made of ceramic materials, such as aluminum nitride (AIN), a heating layer 14 for generating heat, alternatively a routing layer 16, a plurality of first vias 18, and a plurality of second vias 20.
• the routing layer 16 is included, the first vias 18 are disposed between the heating layer 14 and the routing layer 16 for connecting the heating layer 14 to the routing layer 16.
• the second vias 20 are disposed under the routing layer 16 (when viewing FIG. 1 ) and in a central region of the substrate 12 for connecting the routing layer 16 to termination wires 22.
• the ceramic heater 10 may be used as a part of a support pedestal in semiconductor processing.
• the substrate 12 has a flat plate configuration and defines an upper surface 30 for heating a heating target thereon and a bottom surface 32 from which terminal wires 22 extend.
• a tubular shaft (not shown) may be bonded to the bottom surface 32 of the ceramic heater 10 and surround the termination wires 22.
• the substrate 12 may include a plurality of plate members 34, 36, 38. While three plate members 34, 36, 38 are shown in the illustrative example, the substrate 12 may include any number of plate members.
• the surface roughness of adjacent surfaces between the first and second plate members 34, 36 and between the second and third plate members 36, 38 are less than 5pm, particularly between 100nm and 5pm.
• the heating layer 14 is disposed in the first plate member 34.
• the routing layer 16 and the first vias 18 are disposed in the second plate member 36.
• the third vias 20 are disposed in and extend through the third plate member 38.
• the heating layer 14, the routing layer 16, the first and second vias 18, 20 may be all made of aluminum material. It should be understood, however, that the heating layer 14 may be disposed on or partially in the first plate member 34 while remaining within the scope of the present disclosure.
• the routing layout 16 may be disposed on or in, or a combination thereof, while remaining within the scope of the present disclosure.
• one or more of the heating layer 14, the routing layer 16, the first and second vias may be made of aluminum material, while the remaining one(s) may be made of other metallic materials without departing from the scope of the present disclosure.
• the heating layer 14, the routing layer 16, the first and second vias 18, 20 are all made of aluminum material, a hermetic bonding is formed between these layers/vias and the substrate 12, thereby eliminating the need for hermetic isolation, which would otherwise be required in a typical ceramic heater. Hermetic bonding created between the aluminum material and the ceramic material due to the use of the aluminum material will be described in more detail below.
• Aluminum material has the desired temperature coefficient of resistance (TCR) to operate as a heating element at elevated temperature.
• TCR represents the property of a material that experiences an increase in electrical resistivity when the temperature is increased.
• Aluminum has resistivity at room temperature in the range of 2.65x1 O 8 to 5.9x1 O 8 W-m depending on the alloying composition (e.g. 5 nines purity, 7072, 6061 , 5456, etc.), and has a TCR at 4290x1 O 6 /°C.
• the resistivity of aluminum significantly increases at elevated temperature, making aluminum suitable for a heating element.
• Aluminum alloy, such as 5456 (AIMg5Mn1 , A95456) aluminum may be used over pure aluminum as the aluminum alloy has a higher room temperature resistivity and higher resistivity at elevated temperature.
• the heating layer 14 may have a thickness between 5 and 200pm.
• the routing layer 16 is made thicker than the heating layer 14 to concentrate heating in the heating layer 14 and reduce heating in the routing layer 16.
• a method 50 of manufacturing a ceramic heater 10 starts with preparing a first plate member 34 with a first trench 40, a second plate member 36 with first via holes 42, and a third plate member 38 with second via holes 44 in step 52.
• the second plate member 36 may be formed with both the first via holes 42 and a second trench 46 in this step.
• the first trench 40 will be used to define a shape of the heating layer 14 and thus the geometry of the first trench 40 needs to be precisely controlled in order to provide a heating layer 14 with a predetermined thickness, which may be constant or varied.
• the first trench 40 may have a thickness in the range of 5 to 200pm in order to form a heating layer 16 of the same thickness.
• an aluminum material is applied in the first trench 40 of the first plate member 34, the first via holes 42 of the second plate member 36, and the second via holes 44 of the third plate member 38 in step 54.
• the aluminum material may be in the form of an aluminum foil, aluminum powder, or any other solid form that can be placed in the first trench 40.
• the aluminum material in the first via holes 42 and the second via holes 44 may be in the form of aluminum rods that are inserted into the first and second via holes 42, 44.
• the aluminum material may be applied in the first trench 40, the first via holes 42 and the second via holes 44 by applying an aluminum powder by sputtering, deposition, cold spray, cathodic arc deposition, or other thin film processes, among others. It should be understood that the aluminum material described herein does not necessarily have to be the same aluminum material for the heating layer 14, the vias 42, 44, and the routing layer 16 and that different aluminum materials/compositions may be used throughout each of these components while remaining within the scope of the present disclosure.
• the first plate member 34, the second plate member 36, and the third plate member 38 are subjected to a thermal process to form the heating layer 14 in the first plate member 34, the first vias 18 through the second plate member 36, and the second vias 20 through the third plate member 38 in step 56.
• the thermal process is performed at 660°C to 1 100°C in a vacuum of between 1 .33x1 O 3 Pa (10 5 Torr) and 1 33x10 5 Pa (10 7 ) Torr, or at a pressure of 0.1 to 6.4MPa for a duration of approximately 10 to 90 minutes.
• the aluminum material is heated above a melting point of the aluminum material and is melted.
• Molten aluminum material has good wettability for bonding the aluminum compositions onto ceramic materials, particularly aluminum nitride (AIN). Therefore, the molten aluminum can completely fill in the first trench 40, the first via holes 42, and the second via holes 44 and conform to a geometry of the first trench 40, the first via holes 42, and the second via holes 44.
• the aluminum material in the first trench 40 forms the heating layer 14.
• the aluminum material in the first via holes 42 forms the first vias 18.
• the aluminum material in the second via holes 44 forms the second vias 20.
• the routing layer 16, and the first and second vias 18, 20 has the advantage of better controlling the resistance and geometry of the heating layer 14, the routing layer 16, the first and second vias 18, 20.
• aluminide is generally formed during the bonding process. Therefore, it is difficult to determine and control the resistance and the geometry of the vias.
• the second plate member 36 is bonded to the first plate member 34 in step 58. As shown in FIG. 3B, when the second plate member 36 is bonded to the first plate member 34, the first vias 18 are in contact with the heating layer 14.
• the first and second plate members 34 and 36 may optionally be configured to have at least one bonding trench (not shown) along a periphery of one or both of the first and second plate members 34 and 36 and at adjacent surfaces thereof.
• the bonding trench is filled with aluminum material that is used to bond the first and second plate members 34 and 36 together to provide additional hermetic bonding.
• the bonding trench has been described in co-pending U.S. Application No. 15/955,431 , titled "CERAMIC-ALUMINUM ASSEMBLY WITH BONDING TRENCHES,” which is commonly assigned with the present application, and the content of which is incorporated herein by reference in its entirety.
• a spacing between the first plate member 34 and the second plate member 36 along the adjacent surfaces is less than 5 pm.
• the first and second plate members 34, 36 are brought together to contact a solid aluminum material.
• a force and heat is applied to the assembly above a melting point of the solid aluminum material such that the solid aluminum material flows into the bonding trench.
• Additional heat is applied to the assembly at or above a wetting temperature of the first plate member 34 or the second plate member 36 in which the bonding trench is formed to bond the first plate member 34 to the second plate member 36.
• the molten aluminum solidifies and bonds the first and second plate members 34, 36 together to provide a hermetic bonding therebetween.
• the second plate member 36 is formed with a second trench 46 in step 60.
• An aluminum material is then applied in the second trench 46 of the second plate member in step 62.
• the second plate member 36 and the aluminum material are subjected to another thermal process to form a routing layer 16 in the second trench 46 of the second member 36 in step 64. This thermal process is similar to that described in step 56.
• the second plate member 36 may be formed with the first via holes 42 and the second trench 46 in step 52 before the aluminum material is applied.
• the aluminum material may be applied in the first via holes 42 and the second trench 46 simultaneously and the entire assembly is subjected to a thermal process.
• the third plate member 38 is bonded to the second plate member 36 in step 66.
• the second vias 20 of the third plate member 38 are in contact with the routing layer 16 in the second plate member 36.
• terminal wires 22 are bonded to the second vias 20 of the third plate member 38 in step 68, as shown in FIG. 3D.
• the termination wires 22 may be bonded to the second vias 20 metallurgically by brazing or welding the termination wires 22 to the second vias 20 or mechanically by tapping the aluminum filled via holes.
• a variant of a first plate member 70 is shown to include a plurality of heating layers 72 and a plurality of alignment holes 74 for positioning aluminum rods, or aluminum material, that are/is to be inserted to connect the heating layers 72 to corresponding routing layers.
• the heating layer is made of aluminum or aluminum alloy, which is not typically used as a heating element due to its poor mechanical properties at elevated temperatures and due to its significantly different CTE from that of the ceramic material.
• metals or metal alloys such as molybdenum or tungsten, which have CTE matched to that of the AIN, are used to form the various functional layers in the ceramic substrate made of AIN to avoid thermal stress between the metals and the ceramic substrate at elevated temperatures.
• a metallic material with relatively low TCR is used to better control the resistance of the materials.
• the ceramic heater of the present disclosure leverages the properties of aluminum material in a way that is unique to the AIN - Al bonded system. Despite the incompatible CTE between aluminum and AIN, the wetting of the aluminum material to the ceramic substrate creates a good bonding therebetween, reducing the likelihood of generating cracks at their interface due to thermal stress. Accordingly, in one form of the present disclosure, the aluminum material (e.g., the aluminum heating layer) is bonded directly to the ceramic, without the use and/or presence of a separate bonding layer between the aluminum material and the ceramic substrate.
• the ceramic heater of the present disclosure also takes advantage of the high TCR of the aluminum material, which is typically not desirable in a heating element, and uses the aluminum material to form the heating layer. The resistance of the heating layer made of aluminum material may be closely monitored and controlled by using the teachings of U.S. Patent No. 9,123,755 and its related family of applications, which are commonly owned with the present application and are incorporated by reference herein in their entirety.
• Spatially relative terms such as “inner,” “outer,” “beneath,” “below,” “lower,” “above,” “upper,” and the like, may be used herein for ease of description to describe one element or feature’s relationship to another element(s) or feature(s) as illustrated in the figures.
• Spatially relative terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as“below” or“beneath” other elements or features would then be oriented“above” the other elements or features.
• the example term “below” can encompass both an orientation of above or below.
• the device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Manufacturing & Machinery (AREA)
• Chemical & Material Sciences (AREA)
• Ceramic Engineering (AREA)
• Inorganic Chemistry (AREA)
• Resistance Heating (AREA)
• Surface Heating Bodies (AREA)
• Electrodes For Cathode-Ray Tubes (AREA)

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• 2019
  • 2019-04-17 TW TW108113401A patent/TWI801559B/zh active
  • 2019-04-17 JP JP2020558053A patent/JP7379372B2/ja active Active
  • 2019-04-17 KR KR1020207033060A patent/KR102735500B1/ko active Active
  • 2019-04-17 US US16/386,870 patent/US20190320501A1/en not_active Abandoned
  • 2019-04-17 TW TW112113460A patent/TWI829577B/zh not_active IP Right Cessation
  • 2019-04-17 WO PCT/US2019/027865 patent/WO2019204433A1/en not_active Ceased

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