TW202105592A - 晶圓載置台及其製造方法 - Google Patents
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Abstract
晶圓載置台10具備:陶瓷構件12,具備晶圓載置面12a;網狀電極14,埋設於陶瓷構件12;導電性的連接構件16,接觸網狀電極14且從陶瓷構件12當中之與晶圓載置面12a為相反側的面12b露出至外部;和外部通電構件18,接合至連接構件16當中之露出至外部的面。在網狀電極14當中之與連接構件16相對的區域的網目開口部14a,充填包含導電性粉末與陶瓷原料之混合物的燒結體之燒結導電體15。
Description
本發明是有關於晶圓載置台及其製造方法。
作為晶圓載置台,已知例如專利文獻1所記載的晶圓載置台。在專利文獻1中,作為這種晶圓載置台,揭示了具備陶瓷構件、網狀電極、導電性的連接構件、和外部通電構件的晶圓載置台。陶瓷構件具備晶圓載置面。網狀電極埋設於陶瓷構件。連接構件接觸網狀電極,從陶瓷構件當中之與晶圓載置面為相反側的面露出至外部。外部通電構件透過接合層接合至連接構件當中之露出至外部的面。
[先前技術文獻]
[專利文獻]
[專利文獻1]國際公開第2015/198892號手冊
[發明所欲解決的問題]
但是,由於連接構件是與網狀電極作線接觸,接觸構件與網狀電極的實質上之接觸面積較小。因此,從外部通電構件透過連接構件流通電流至網狀電極時的在連接構件附近的發熱量變多,會損害晶圓的均熱性。
本發明是為了解決這樣的問題而做出,以抑制通電至網狀電極時的連接構件的發熱為主要目的。
[用以解決問題的手段]
本發明的晶圓載置台是一種晶圓載置台,其具備:
陶瓷構件,具備晶圓載置面;
網狀電極,埋設於前述陶瓷構件;
導電性的連接構件,接觸前述網狀電極,從前述陶瓷構件當中之與前述晶圓載置面為相反側的面露出至外部;和
外部通電構件,接合至前述連接構件當中之露出至外部的面;
在前述網狀電極當中之與前述連接構件相對的區域的網目開口部,充填包含導電性粉末與陶瓷原料的混合物的燒結體之燒結導電體。
在此晶圓載置台中,在網狀電極當中之與連接構件相對的區域的網目開口部,充填燒結導電體。燒結導電體是包含導電性粉末與陶瓷原料(顆粒或粉末)之混合物的燒結體。連接構件除了接觸構成網狀電極的線,也透過燒結導電體來接觸網狀電極。因此,連接構件與網狀電極的實質上之接觸面積變得比先前大。藉此,連接構件與網狀電極之間的電阻值變得比先前低,能夠抑制從外部通電構件透過連接構件流通電流至網狀電極時的連接構件的發熱。
在本發明的晶圓載置台,前述網狀電極也可以是施加高頻電壓的RF電極。高頻電壓施加至網狀電極的情況下,雖然連接構件本身會因為從外部通電構件透過連接構件流通至網狀電極的高頻電流而容易發熱,由於上述連接構件與網狀電極之間的電阻值如上所述變得比先前低,能夠抑制連接構件本身的發熱。
在本發明的晶圓載置台,前述網目開口部是1邊的長度為0.3mm以上且1mm以下的四角形,前述導電性粉末的粒徑也可以是1μm以上且10μm以下。
在本發明的晶圓載置台,前述導電性粉末優選為與前述網狀電極相同的材料的粉末。如此一來,由於燒結導電體與網狀電極的熱膨脹係數會是接近的值,可以防止因為熱應力而在陶瓷構件產生裂痕。另外,導電性粉末與網狀電極的熱膨脹係數優選為接近陶瓷構件的熱膨脹係數的值。
本發明的晶圓載置台的製造方法包含:
(a)在陶瓷成形體或陶瓷燒成體之基底上配置網狀電極,在前述網狀電極當中之指定區域的網目開口部加入導電性粉末的步驟;
(b)在前述網狀電極的前述指定區域的上方配置導電性的連接構件的步驟;
(c)在前述基底上積層陶瓷原料以覆蓋前述網狀電極及前述連接構件以形成積層體的步驟;
(d)熱壓燒成前述積層體且將前述基底及前述陶瓷原料一體化以形成陶瓷構件的步驟;和
(e)從前述陶瓷構件當中之與前述晶圓載置面為相反側的面開孔以到達前述連接構件,將外部通電構件插入前述孔,將前述外部通電構件接合至前述連接構件的露出面的步驟。
藉由這種晶圓載置台的製造方法,可以比較容易製作出上述之本發明的晶圓載置台。
接著,以下說明本發明的理想的一實施形態之晶圓載置台10。第1圖為晶圓載置台10的主要部分的縱剖面圖,第2圖為網狀電極14的部分平面圖。
晶圓載置台10是用於載置施加蝕刻、CVD等處理的晶圓,設置於未圖示的真空腔室內。此晶圓載置台10具備陶瓷構件12、網狀電極14、燒結導電體15、連接構件16、外部通電構件18、和導引構件22。
陶瓷構件12是形成為圓板狀,且一邊的表面為用於載置晶圓的晶圓載置面12a。另外,在第1圖中,雖然晶圓載置面12a變成在下方,實際上在使用晶圓載置台10的時候,晶圓載置面12a變成在上方。作為此陶瓷構件12的材質,例如,優選為氮化鋁、氧化鋁、碳化矽、氮化矽等。此外,在陶瓷構件12的與晶圓載置面12a為相反側的面12b,形成有底筒狀的孔12c。陶瓷構件12也可以設為例如直徑150~500mm、厚度0.5~30mm。孔12c也可以設為例如直徑5~15mm、深度5~25mm。
網狀電極14是埋設於陶瓷構件12的RF電極(施加高頻電壓的電極),其為沿著晶圓載置面12a設置的圓形的金屬網目。作為此網狀電極14的材質,例如,優選為鎢、鉬、鈮、鉭、白金、上述這些的合金、上述這些的化合物等。雖然顯示於第2圖的網狀電極14的網目開口(四角形的網目開口部14a的一邊的長度)A、網目(縱線及橫線1吋間的目數)M、線徑d、網目開口率ε並未特別限定,網目開口A優選為0.3mm以上1mm以下,網目M優選為10以上100以下,線徑d優選為0.1mm以上1mm以下,網目開口率ε優選為40%以上60%以下。
燒結導電體15是包含導電性粉末P與陶瓷原料(顆粒或粉末)之混合物的燒結體,其充填網狀電極14當中之與連接構件16相對的區域的網目開口部14a。燒結導電體15在接觸構成網狀電極14的線的側面的同時,接觸連接構件16的水平面16b。包含在燒結導電體15的導電性粉末P的材質優選為熱膨脹係數接近網狀電極14,更優選為與網狀電極14的材質相同。此外,網狀電極14及導電性粉末P的熱膨脹係數優選為接近陶瓷構件12的熱膨脹係數。例如,在陶瓷構件12的材質是氮化鋁的情況下,網狀電極14及導電性粉末P的材質優選為鉬、鎢、碳化鉬等的鉬化合物或碳化鎢等的鎢化合物。在陶瓷構件12的材質是氧化鋁的情況下,網狀電極14及導電性粉末P的材質優選為鈮或碳化鈮等的鈮化合物。
連接構件16是埋設為從陶瓷構件12當中之孔12c的底面到達網狀電極14之圓柱狀的金屬構件。此連接構件16雖然也可以使用塊體金屬,也可以使用金屬粉末燒結之物。連接構件16的材質優選為接近陶瓷構件12的熱膨脹係數、接近網狀電極14及導電性粉末P的熱膨脹係數等。連接構件16的材質優選為與網狀電極14及導電性粉末P的材質相同。連接構件16當中之露出於孔12c的底面的露出面16a與孔12c的底面為同一面。連接構件16之直徑優選為2~5mm,高度優選為1~5mm。
外部通電構件18具備透過導電性的接合層20接合至連接構件16的第1部18a、和透過導電性的中間接合物18c接合至第1部18a當中之與此連接構件16的接合面為相反側的面的第2部18b。考量到會使用電漿氣氛、腐蝕氣體氣氛等,第2部18b是由耐氧化性高的金屬所構成。但是,耐氧化性高的金屬,一般由於熱膨脹係數較大,如果直接與連接構件16接合,接合強度會因為兩者的熱膨脹差而降低。因此,第2部18b是透過由熱膨脹係數接近連接構件16的熱膨脹係數的金屬所構成的第1部18a接合至陶瓷構件12。這種金屬通常耐氧化性不足。因此,第1部18a利用由耐氧化性高的金屬所構成的導引構件22來圍繞周圍,且不與電漿氣氛、腐蝕氣體氣氛等直接接觸的構成。作為第2部18b的材質,優選為純鎳、鎳基耐熱合金、金、合金、銀及上述這些的合金等。作為第1部18a的材質,優選為鉬、鎢、鉬-鎢合金、鎢-銅-鎳合金、鈷等。接合層20是利用硬焊材來接合。作為硬焊材,優選為金屬硬焊材,例如優選為Au-Ni硬焊材、Al硬焊材、Ag硬焊材等。接合層20接合包含連接構件16的露出面16a的孔12c的底面與第1部18a的端面。外部通電構件18的中間接合部18c在接合第1部18a與第2部18b的同時,掩埋導引構件22的內周面與第1部18a的外周面之全面或其中一部分的間隙、導引構件22的內周面與第2部18b的外周面的一部分的間隙等。因此,第1部18a利用中間接合部18c遮斷與周圍的氣氛的接觸。另外,中間接合部18c也可以使用與接合層20相同的材質。第1部18a也可以設為直徑3~6mm、高度2~5mm,第2部18b也可以設為直徑3~6mm、高度任意。
導引構件22是包圍外部通電構件18當中之至少第1部18a的周圍之圓筒狀的構件,以耐氧化性比第1部18a更高的材質所形成。此導引構件22內徑比第1部18a及第2部18b的外徑更大,外徑(除了凸緣(flange))比孔12c的直徑更小,高度比第1部18a的高度更高。導引構件22當中之面對孔12c的底面之端面透過接合層20與連接構件16、外部通電構件18及陶瓷構件12接合。導引構件22的材質可以使用作為外部通電構件18的第2部18b的材質所例示的材質。
接著,說明有關晶圓載置台10的使用例。在未圖示的腔室內將晶圓載置台10配置為晶圓載置面12a在上方,將晶圓載置於晶圓載置面12a。藉由透過外部通電構件18、接合層20及連接構件16將未圖示的RF電源的交流高頻電壓施加至網狀電極14,在由設置於腔室內的上方之未圖示的對向水平電極與埋設於晶圓載置台10的網狀電極14所構成的平行平板電極間使電漿產生,利用此電漿對晶圓進行CVD成膜或蝕刻。
接著,有關晶圓載置台10的製造例,以下根據第3圖的製造步驟圖來說明。首先,在加壓成形陶瓷原料(顆粒或粉末)以成為圓板之陶瓷成形體之基底112的上表面配置網狀電極14,在網狀電極14當中之在指定區域14p的網目開口部14a加入導電性粉末P(參照第3(a)圖)。指定區域14p是配置連接構件16的區域。另外,基底112的下表面在加工後成為晶圓載置台10的頂面,最終成為晶圓載置面12a側。接著,在網狀電極14的指定區域14p的上方配置圓柱狀的連接構件16(參照第3(b)圖)。藉此,連接構件16成為與網狀電極14及導電性粉末P接觸的狀態。接著,在基底112上積層陶瓷原料(顆粒或粉末)以覆蓋網狀電極14及連接構件16且加壓成形以形成積層體114(參照第3(c))。積層體114包含基底112與其上方所積層的陶瓷成形體113。接著,熱壓燒成積層體114且將基底112及陶瓷成形體113一體化以形成陶瓷構件12(參照第3(d)圖)。藉此,在指定區域14p的網目開口部14a所加入的導電性粉末P在與陶瓷原料混合的狀態下燒結以成為燒結導電體15。接著,從陶瓷構件12當中之與晶圓載置面12a為相反側的面12b開孔12c以到達連接構件16,將外部通電構件18的構成組件插入孔12c,將外部通電構件18接合至連接構件16的露出面16a,得到晶圓載置台10(參照第3(e)圖)。在開孔12c時,孔12c的底面與連接構件16的露出面16a是加工至成為同一面。在將外部通電構件18的構成組件接合至連接構件16的露出面16a時,在孔12c的底面塗布會成為接合層20的硬焊材,在其上方以外部通電構件18的第1部18a、會成為中間接合部18c的硬焊材及外部通電構件18的第2部18b的順序堆疊的同時,在其周圍配置導引構件22後,在非氧化性條件下加熱以熔融硬焊材且之後固化,藉此得到第1圖所示的晶圓載置台10。所謂的非氧化性條件,是指真空下或非氧化性氣氛(例如氬氣氛、氮氣氛等的惰性氣氛)下。藉由以上的製造方法,可以比較容易地製造晶圓載置台10。
在以上說明之本實施形態的晶圓載置台10中,在網狀電極14當中之在與連接構件16相對的區域的網目開口部14a充填燒結導電體15。連接構件16除了接觸構成網狀電極14的線,還透過燒結導電體15來接觸網狀電極14。因此,連接構件16與網狀電極14的實質上之接觸面積變得比沒有燒結導電體15的情況更大。藉此,連接構件16與網狀電極14之間的電阻值變得比沒有燒結導電體15的情況更低,可以抑制從外部通電構件18透過連接構件16流通電流至網狀電極14時的連接構件16的發熱。因此,連接構件16變得難以成為熱點(hot spot),晶圓的均熱性改善。
特別是,在施加高頻電壓至網狀電極14的情況下,雖然連接構件16本身因為從外部通電構件18透過連接構件16流通至網狀電極14的高頻電流而容易發熱,如上所述由於連接構件16與網狀電極14之間的電阻值變低,能夠抑制連接構件16本身的發熱。
此外,網目開口部14a是1邊的長度為0.3mm以上1mm以下的四角形,導電性粉末P的粒徑優選為1μm以上10μm以下。
更進一步,導電性粉末P優選為與網狀電極14相同的材料的粉末。如此一來,由於燒結導電體15與網狀電極14的熱膨脹係數匹配,可以防止裂痕因為熱應力而在陶瓷構件12產生。
順帶一提,本發明者除了在指定區域14p的網目開口部14a充填導電性粉末P以形成燒結導電體15,也考慮了採用在網狀電極14的指定區域14p的上方配置金屬箔30且在此金屬箔30承載連接構件16的構造(第1參考例,參照第4圖)、在網狀電極14的指定區域14p的網目開口部嵌入金屬箔32的構造(第2參考例,參照第5圖)、在網狀電極14的指定區域14p的網目開口部插入從連接構件16的下表面突出的凸部16p(第3參考例,參照第6圖)的構造等。但是,在第4圖的構造中,在以熱壓燒成製作陶瓷構件12時金屬箔30的邊緣會成為起點以產生裂痕。在第5圖的構造中,因為埋設於陶瓷構件12的金屬箔32與連接構件16的接觸不充分而無法抑制連接構件16的發熱。在第6圖的構造中,以熱壓燒成製作陶瓷構件12時插入網目開口部之凸部16p的尖端會成為起點以產生裂痕。上述實施形態的燒結導電體15在燒成時是導電性粉末、陶瓷原料(顆粒或粉末)等的混合物,由於與金屬箔32不同而具有流動性,因此認為其抑制了裂痕的產生。
另外,更不用說,本發明並未作任何限定於上述實施形態,只要屬於本發明的技術範圍,能夠以各種的態樣來實施。
例如,在上述實施形態中,雖然在陶瓷構件12埋設作為RF電極的網狀電極14,除此之外,也可以埋設用於在晶圓載置面12a吸附晶圓的靜電電極,也可以埋設用於加熱晶圓的加熱電極(電阻發熱體)。
在上述實施形態中,雖然將網狀電極14作為RF電極來使用,也可以將網狀電極14作為靜電電極來使用,也可以作為加熱電極(電阻發熱體)來使用。
在上述實施形態,雖然晶圓載置面12a也可以是平面,也可以設為利用壓印加工等形成多個突起的面。
在上述實施形態,在與晶圓載置台10的晶圓載置面12a為相反側的面12b,也可以將與陶瓷構件12為相同材質的筒狀的軸(shaft)設為與陶瓷構件12一體化。在此情況下,外部通電構件18等配置於軸的中空內部。此外,在將軸設為與陶瓷構件12一體化後安裝外部通電構件18。為了製造軸,例如,使用模具以藉由CIP將陶瓷原料(顆粒或粉末)成形,在常壓爐以指定溫度燒成,燒成後,加工為指定尺寸即可。此外,為了將軸與陶瓷構件12一體化,例如,將軸的端面對接至陶瓷構件12的面12b,升溫至指定溫度且接合兩者來一體化即可。
在上述實施形態中,在晶圓載置台10的製造方法,雖然將陶瓷成形體作為基底112來使用,也可以將陶瓷燒結體作為基底112來使用,也可以使用陶瓷煅燒體。
在上述實施形態中,雖然例示了第3圖的製造步驟,並非特別限定於此。例如,也可以在陶瓷生胚片(ceramic green sheet)的上表面配置網狀電極14,將導電性粉末P加入網目開口部14a,在其上方配置連接構件16,接下來承載其他的陶瓷生胚片且壓縮以製作積層體,常壓燒成此積層體。在此情況下,在壓縮時,導電性粉末P在網目開口部14a內成為與陶瓷生胚片中的陶瓷原料(顆粒或粉末)混合的狀態,在其之後的常壓燒成中成為燒結導電體。
本申請是以在2019年7月1日申請的日本專利申請第2019-122749號為優先權主張的基礎,其所有的內容藉由引用而包含於本說明書。
10:晶圓載置台
12:陶瓷構件
12a:晶圓載置面
12b:面
12c:孔
14網狀電極
14a:網目開口部
14p:指定區域
15:燒結導電體
16:連接構件
16a:露出面
16b:水平面
16p:凸部
18:外部通電構件
18a:第1部
18b:第2部
18c:中間接合部
20:接合層
22:導引構件
30,32:金屬箔
112:基底
113:陶瓷成形體
114:積層體
A:網目開口
d:線徑
M:網目
P:導電性粉末
ε:網目開口率
第1圖為晶圓載置台10的主要部分的縱剖面圖。
第2圖為網狀電極14的部分平面圖。
第3圖為晶圓載置台10的製造步驟圖。
第4圖為第1參考例的主要部分的縱剖面圖。
第5圖為第2參考例的主要部分的縱剖面圖。
第6圖為第3參考例的主要部分的縱剖面圖。
10:晶圓載置台
12:陶瓷構件
12a:晶圓載置面
12b:面
12c:孔
14:網狀電極
14a:網目開口部
15:燒結導電體
16:連接構件
16a:露出面
16b:水平面
18:外部通電構件
18a:第1部
18b:第2部
18c:中間接合部
20:接合層
22:導引構件
Claims (5)
- 一種晶圓載置台,包括: 陶瓷構件,具備晶圓載置面; 網狀電極,埋設於前述陶瓷構件; 導電性的連接構件,接觸前述網狀電極,從前述陶瓷構件當中之與前述晶圓載置面為相反側的面露出至外部;以及 外部通電構件,接合至前述連接構件當中之露出至外部的面; 其中在前述網狀電極當中之與前述連接構件相對的區域的網目開口部,充填包含導電性粉末與陶瓷原料的混合物的燒結體之燒結導電體。
- 如請求項1之晶圓載置台,其中 前述網狀電極是施加高頻電壓的RF電極。
- 如請求項1或2之晶圓載置台,其中 前述網目開口部是1邊的長為0.3mm以上1mm以下的四角形; 前述導電性粉末的粒徑為1μm以上10μm以下。
- 如請求項1至3項中任一項之晶圓載置台,其中 前述導電性粉末是與前述網狀電極為相同材料的粉末。
- 一種晶圓載置台的製造方法,包括: (a)在陶瓷成形體或陶瓷燒成體之基底上配置網狀電極,在前述網狀電極當中之指定區域的網目開口部加入導電性粉末的步驟; (b)在前述網狀電極的前述指定區域的上方配置導電性的連接構件的步驟; (c)在前述基底上積層陶瓷原料以覆蓋前述網狀電極及前述連接構件以形成積層體的步驟; (d)熱壓燒成前述積層體且將前述基底及前述陶瓷原料一體化以形成陶瓷構件;以及 (e)從前述陶瓷構件當中之與前述晶圓載置面為相反側的面開孔以到達前述連接構件,將外部通電構件插入前述孔,將前述外部通電構件接合至前述連接構件的露出面。
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