WO2019202551A1 - Procédés et systèmes pour imprimer de grands motifs périodiques par chevauchement de champs d'exposition - Google Patents

Procédés et systèmes pour imprimer de grands motifs périodiques par chevauchement de champs d'exposition Download PDF

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Publication number
WO2019202551A1
WO2019202551A1 PCT/IB2019/053239 IB2019053239W WO2019202551A1 WO 2019202551 A1 WO2019202551 A1 WO 2019202551A1 IB 2019053239 W IB2019053239 W IB 2019053239W WO 2019202551 A1 WO2019202551 A1 WO 2019202551A1
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WIPO (PCT)
Prior art keywords
mask
elongated beam
fall
pattern
distance
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PCT/IB2019/053239
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English (en)
Inventor
Francis Clube
Harun Solak
Original Assignee
Eulitha A.G.
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Application filed by Eulitha A.G. filed Critical Eulitha A.G.
Priority to JP2020557272A priority Critical patent/JP7044901B2/ja
Priority to EP19725868.4A priority patent/EP3781989B1/fr
Priority to CN201980026346.XA priority patent/CN111936935B/zh
Priority to KR1020207029429A priority patent/KR102467826B1/ko
Priority to US17/048,382 priority patent/US11422471B2/en
Publication of WO2019202551A1 publication Critical patent/WO2019202551A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

Definitions

  • U.S. Pat. no. 8,841 ,046 discloses two related photolithographic methods based on the Talbot effect for printing periodic arrays of high-resolution features with high-uniformity onto non-flat substrates.
  • a periodic pattern in a mask is illuminated by a beam of collimated light beam from a source having a broad spectral bandwidth, and the wafer is positioned beyond a certain distance from the mask at which the image becomes“stationary”, that is, its intensity distribution becomes substantially invariant to further increase in distance.
  • the distance beyond which the image is stationary has been shown (Solak et al.“Achromatic spatial frequency multiplication: A method for production of nanometer-scale periodic features”, J. Vac. Sci. Technol. B23(6), 2005) to be related to the full width at half maximum bandwidth, Dl, by
  • A is the period of the pattern and k is a constant.
  • the periodic pattern in the mask is instead illuminated by a collimated beam of monochromatic light and the separation between the substrate and mask is varied during exposure by a distance corresponding to an integer multiple of the period of the periodic variation of the intensity distribution in the direction orthogonal to the mask, in other words, by an integer multiple of the Talbot distance.
  • This prints an average of the transverse intensity distributions between the Talbot planes into the photosensitive layer on the substrate, and because the average is independent of the initial separation of the mask and substrate, the printed pattern has a practically unlimited depth of focus.
  • the separation may be varied during exposure either continuously over this range or in a discrete way by exposing the substrate at multiple positions.
  • ATL Achromatic Talbot lithography
  • DTL Displacement Talbot lithography
  • the patterns printed using ATL or DTL are “spatial frequency multiplied” with respect to the pattern in the mask.
  • the period of the printed pattern is half that of the grating in the mask.
  • U.S. Pat. nos. 8,368,871 and 9,036,133 teach modifications of the ATL and DTL techniques in which each point of the mask pattern is illuminated by light having an extended angular distribution, that is, not by collimated light but by light with intensity components at different angles of incidence. They teach various embodiments in which the angles of the components are selected such the printed features have a particular resolution, shape or array symmetry that is different from that of the features in the mask.
  • U.S. Pat. no. 8,525,973 discloses a method for reducing the sensitivity of DTL and DTL-based exposure schemes solution to deviations of the change of separation between the mask and substrate during exposure from an exact integer multiple of the Talbot distance. It teaches that the exposure dose illuminating the mask per incremental change of separation of the mask and substrate is not constant during the change of separation but is varied in a particular manner. In particular it advocates that the exposure dose per incremental displacement of the substrate should vary according to a Gaussian profile, either by varying the illumination intensity or by varying the speed of displacement. It teaches that the change of separation over which the speed or intensity is varied should be greater than the Talbot distance.
  • U.S. Pat. no. 8,904,316 describes further modifications of the ATL and DTL techniques in which a variety of designs of phase-shift mask are employed to print patterns that have a smaller period or different array symmetry with respect to those in the mask.
  • U.S. Pat. no. 9,182,672 describes an exposure method related to DTL in which a mask defining a periodic pattern is tilted at a selected angle respect to a substrate to be printed and during exposure the substrate is laterally displaced parallel to the plane of tilt. This exposes the substrate to the range of transversal intensity distributions between successive Talbot planes and so prints essentially the same pattern as ATL and DTL techniques and provides the same advantages.
  • U.S. Pat. no. 9,280,056 describes a related technique in which a periodic pattern in a mask disposed in proximity to a substrate is illuminated by a collimated beam whose wavelength is scanned across a spectral bandwidth during the exposure. The bandwidth is arranged in relation to the separation of the substrate and mask so that the mean intensity distribution exposing the substrate is equivalent to that produced by ATL.
  • U.S. Pat. Appl. no. 14/123,330 describes a further related technique in which an array of lasers emitting light at a plurality of wavelengths over a spectral bandwidth is employed to illuminate a periodic pattern in a mask in proximity to a substrate.
  • the bandwidth of wavelengths and the separation of the substrate and the mask are arranged so that the resulting exposure of the substrate is similarly equivalent to that produced by ATL.
  • U.S. Pat. no. 9,658,535 describes two further DTL-related exposure schemes for printing periodic patterns with uniformity onto a substrate.
  • the period of the mask pattern is selected in relation to the illumination wavelength so that only 0 th and 1 st orders are diffracted by the mask.
  • N sub-exposures of the mask are performed with the separation between mask and substrate being changed between sub-exposures by certain fractions of the Talbot distance.
  • the substrate is exposed in a number of sub-exposures to the same intensity distribution formed by the mask pattern with the substrate being laterally displaced by certain fractions of the pattern period between the sub-exposures.
  • the integrated intensity distribution of the sub exposures prints a pattern that is equivalent to that obtainable using DTL.
  • U.S. Pat. nos. 8,524,443 and 9,007,566 describe further exposure schemes related to ATL and DTL for printing linear grating patterns into a photosensitive layer on a substrate.
  • a grating pattern in the mask is illuminated with monochromatic light that has a range of angles of incidence in a plane parallel to the grating lines.
  • the light at a particular angle of incidence forms Talbot image planes with a particular separation, and the range of angles is selected so that the Talbot image planes formed by the different angles of incidence superpose to produce an intensity distribution at the substrate that is constant in the direction orthogonal to the mask; thereby equivalent to that produced by DTL or ATL.
  • the disclosures describe various optical arrangements for illuminating a mask uniformly with the required range of angles of incidence either simultaneously or sequentially. They describe a scheme in which light with a Gaussian intensity profile converges or diverges onto the mask with the required range of angles and so that the beam at the mask has a diameter much smaller than the pattern in the mask. Exposure is performed by scanning the Gaussian-profile beam in a raster pattern over the mask with consecutive scan passes being partially overlapped, so that the time-integrated exposure energy density prints a uniform grating onto the substrate. In another embodiment an elongated beam is formed whose light is collimated with uniform intensity in the direction of elongation and converges onto the mask with the required range of angles of incidence in the orthogonal plane.
  • Exposure is performed by scanning the beam in a single pass in the direction of the grating lines over the length of the grating, also resulting in a uniform grating on the substrate.
  • a similarly elongated beam that is collimated with uniform intensity along the length of the beam and converges with the required range of angles in the orthogonal plane illuminates instead an elongated grating pattern in the mask.
  • exposure is performed by scanning the photoresist-coated substrate in the direction of the grating lines, thereby producing the same printed result.
  • the substrate may be displaced by the length of the mask grating in the direction of grating elongation and then a second, identical exposure performed so as to print a second grating pattern alongside the first, whereby a composite grating is printed on the substrate that has twice the length of the mask grating.
  • the resulting composite grating is not at all continuous or“seamless” across the border between the 2 exposures, for reasons that are explained below.
  • a difficulty with the teachings of the prior art on DTL and DTL-related techniques is their applicability to very large periodic patterns, such as patterns whose x/y dimensions are larger than ⁇ 300x300mm, as may be required for such applications as pulse compression gratings, spectrometer gratings, photovoltaics/solar cells and polarizers for large displays.
  • a well-collimated exposure beam is required whose dimensions are larger than the size of the printed pattern. Obtaining a suitably-sized collimating lens of sufficient quality may not be possible or can be prohibitively expensive.
  • Scanning instead a beam with a Gaussian intensity profile with partially overlapping scan passes across a large pattern enables a much smaller collimating optic to be used; but this strategy can require a very large number of scan passes, which is undesirable if a short exposure time and high throughput are required for a production process. Moreover, this strategy is unsuitable if it is not possible to produce a beam with a sufficiently Gaussian intensity profile, as may be the case for an excimer laser operating at a deep-UV wavelength. Scanning instead an elongated beam with constant intensity along its length in a single pass across the mask pattern, as also described in U.S. Pat. no.
  • the diffracted beams diverge after the mask, however, and so the edges of the diffracted beams produced by each end of the truncated elongated beam separate laterally as the beams propagate towards the substrate, which consequently results in an imperfect overlapping and non-uniform interference of the diffracted beams in the photoresist at the ends of the elongated beam.
  • the method and apparatus be applicable to both one-dimensional and two-dimensional periodic patterns, in particular to linear gratings, hexagonal and square arrays of features, and be applicable also to quasi-periodic patterns, that is, to patterns whose periodicity varies slowly across the pattern.
  • the method and system enable the very large periodic patterns to be printed in a short exposure time, so as to enable a high throughput of printed substrates for a production process.
  • a method for printing a desired uniform periodic pattern of linear features into a photosensitive layer on a substrate which method includes:
  • the substrate parallel to the mask and with a separation from the mask pattern; c) generating an elongated beam of monochromatic light and directing it to the mask so that the light of the elongated beam illuminates the mask with a range of angles of incidence in a plane orthogonal to the direction of elongation and parallel to the first direction and so that the light of the elongated beam, in a plane parallel to the direction of elongation, is well collimated and has uniform power per incremental distance along the length of the elongated beam except at the two ends of the beam where the power per incremental distance falls to zero according to a first profile over a fall-off distance at one of the beam and according to a complementary, second profile over the fall-off distance at the other end of the beam, wherein the range of angles is selected in relation to the wavelength of the light, the separation of the mask and substrate and the period of the mask grating so that the light diffracted by the mask forms an intensity distribution at the substrate that is uniform in the direction orthogonal to
  • first profile and complementary, second profile are selected so that the summation of the exposure energy densities exposing the mask pattern in the two sub exposures is uniform in the area of the mask pattern where the first and second parts overlap and is the same as that in the areas of the mask pattern exposed by the section of the elongated beam that has uniform power per incremental distance.
  • Complementary is defined as meaning that the intensity fall-off profiles at the two ends of the elongated beam add up to produce a uniform intensity across the overlap region when the profiles are overlapped by the fall-off distance in the first and second sub-exposures.
  • the power per incremental distance of the elongated beam falls off to zero at the ends of the elongated beam according to first and second profiles that are the same.
  • the profiles are linear functions or 180° sections of a cosinus profile, the gradient of the profile being substantially 0 at the start at end of the profile.
  • the power per incremental distance along the length of the elongated beam refers either to the instantaneous power per incremental distance in case of a continuous-wave laser source or to the quasi-instantaneous power per incremental distance in the case of a pulsed laser source (i.e. averaged over multiple laser pulses), or in the case of an oscillating moving aperture being employed to produce a defined fall-off of the power per incremental distance at the ends of the beam, it refers instead to the time-averaged power per incremental distance over time-period duration of an oscillation of the aperture.
  • the method additionally includes scanning said elongated beam in a third sub-exposure in a direction parallel to the first direction across a third part of said mask pattern that is offset from the first and second parts in the direction of the beam elongation, such that the third part of the mask pattern overlaps by the fall-off distance with the first or second parts, and such that the angle of incidence of the beam, in the plane parallel to the direction of elongation, in the area of the mask pattern where the third and first or second parts overlap is the same, so as to print a third part of the desired grating that overlaps with the first or second parts of the desired grating.
  • a plurality of further parts of the desired grating are printed in further sub-exposures such that they superpose to form a larger desired grating on the substrate.
  • a system for printing a desired periodic pattern of linear features into a photosensitive layer, which system includes: a) a mask bearing a mask pattern of linear features that are parallel to a first direction and have a period that is twice that of the desired pattern;
  • first profile and complementary second profile are selected so that the summation of the exposure energy densities exposing the mask pattern in the two sub-exposures is uniform in the area of the mask pattern where the first and second parts overlap and is the same as that in the areas of the mask pattern exposed by the section of the elongated beam that has uniform power per incremental distance.
  • the means for generating the elongated beam generates a power distribution along the length of the elongated beam that falls off to zero at one end of the beam according to a first profile and falls off to zero at the other end of the beam according to a second profile that is the same as the first profile.
  • the first and second profile are the same linear profile or the same cosinus profile.
  • the means for producing the fall-off of the power per incremental distance at each end of the elongated beam is a transmissive filter that is arranged across the width of the beam and whose absorption or reflection varies in a linear manner over the fall-off distance.
  • the means for producing the fall-off of the power per incremental distance at each end of the elongated beam is a half-tone mask that is arranged across the width of the beam and is comprised of a periodic series of apertures each with a width substantially less than the width of the elongated beam so that a plurality of apertures intersect the beam, and where the shape of the apertures is designed so that the mean transmission of the series of apertures at a particular distance across the fall-off region in the direction of beam elongation varies with the particular distance according to the selected first or second profile, and such that substantially all the light of the orders diffracted by the periodic structure of the aperture array exposes the photosensitive layer.
  • the means for producing the fall-off of the power per incremental distance at each end of the beam is produced by a 0 th -order half-tone mask that is arranged across the width of the beam and that is comprised of a two-dimensional array of cells in each of which is a grating with a period whose duty-cycle and/or fill-factor varies within each cell or from cell to the direction of beam elongation so as to generate the selected first or second profile function of fall-off of the power per incremental distance in the 0 th order transmitted by the grating array.
  • the period of the gratings in the cells is selected to be sufficiently small in relation to the wavelength of illumination and in consideration of the geometry of the means for beam generation and scanning so that the 1 st and higher diffraction orders spatially separate from the 0 th diffracted order and can be blocked before they illuminate the pattern in the mask.
  • the means for producing the fall-off of the power per incremental distance at each end of the elongated beam comprises an aperture with a straight edge that is orthogonal to the direction of beam elongation, which is mounted to a translation stage for displacing the aperture in the direction of beam elongation.
  • the stage is controlled by a computer which produces an oscillation of the position of the aperture, preferably according to a triangular/saw-tooth or sinusoidal curve so that the time-averaged fall-off of the power per incremental distance transmitted by the oscillating aperture varies in a linear or cosinusoidal manner in the direction of the beam elongation.
  • the translation stage is preferably a linear motor that enables the aperture to be oscillated at a sufficiently high frequency in relation to the scanning speed of the elongated beam so that the time- integrated exposure energy density of the pattern in the mask in the direction of scanning has the required uniformity.
  • the means for producing a linear fall-off of the power per incremental distance at each end of the elongated beam comprises an aperture mounted to a rotation stage, the shape of the aperture being designed so that the radius of the edge of the aperture from rotation axis varies in a linear manner with increasing rotation angle except for an angle at which the radius reverts immediately back to its initial value or returns linearly back to its initial value.
  • the speed of rotation of the motor is selected to be sufficiently high in relation to the scanning speed of the elongated beam such that the time- integrated exposure energy density of the pattern in the mask in the direction of scanning has the required uniformity.
  • the shape of the aperture may be alternatively designed to produce an intensity profile that falls to zero according to a cosinusoidal profile. For this, the distance of the edge of the aperture from the rotation axis should vary according to an inverse cosinusoidal profile as the aperture is rotated.
  • the scanning means for the second sub-exposure includes means for displacing a part or all of the means for generating the elongated beam in a direction parallel to the beam elongation, or alternatively includes a means for displacing the mask and photosensitive layer in the direction parallel to the beam elongation, in order that that the areas of photoresist exposed in the first and second sub-exposures overlap by the fall-off distance.
  • Fig. 1 schematically illustrates a first embodiment of the invention.
  • Fig. 2 shows the variation of transmission through an apodization filter employed in the first embodiment.
  • Fig. 3 schematically illustrates the intensity distribution of a beam incident on the apodization filter employed in the first embodiment.
  • Fig. 4 illustrates the fall-off of relative intensity per incremental distance at the two ends of the elongated beam generated in the first embodiment.
  • Fig. 5 illustrates the fall-off of intensity at the end of the elongated beam generated in the first embodiment and its illumination of a periodic pattern in a mask.
  • Fig. 6 illustrates the variation of contrast of the DTL-exposed image produced across the overlap region by two sub-exposures with the elongated beam being stepped between sub exposures and with either a linear or cosinusoidal fall-off of intensity over a fall-off distance of 10mm at the ends of the elongated beam in the overlap region, as described in the first and second embodiments.
  • Fig. 7 illustrates the cosinusoidal fall-off of intensity at the two ends of the elongated beam employed in the second embodiment.
  • Fig. 8 illustrates the dependence of the variation of contrast across the overlap region on the width of the fall-off region in the case of a cosinusoidal fall-off of intensity at the ends of the elongated beam.
  • Fig. 9 illustrates the sensitivity of the peak intensity in the DTL-exposed image produced across the overlap region to a lateral offset, from the ideal position, of the elongated beam employed in the second sub-exposure in the case of a cosinusoidal fall-off profile.
  • Fig. 10 illustrates the design of a half-tone mask and its arrangement with respect to an illuminating beam employed in the third embodiment.
  • Figs. 11a and 11 b illustrate respectively the global design and single-cell design in an area of a 0 th -order half-tone mask employed to produce a fall-off of intensity at one end of an elongated beam in the fourth embodiment.
  • Fig. 12 illustrates the dependence of the local transmittance of a cell on the local duty cycle and fill-factor of the cell in a 0 th -order half-tone mask design employed in the fourth embodiment.
  • Fig. 13 illustrates an aperture displacing in the direction of beam elongation as employed in a fifth embodiment.
  • Fig. 14 illustrates an aperture displacing orthogonal to the direction of beam elongation as employed in a sixth embodiment.
  • Fig. 15 illustrates a rotating aperture employed in a seventh embodiment.
  • Fig. 16 illustrates a variant of the first embodiment in which the beam illuminating the mask is instead collimated in both planes, and the pattern is printed in each sub-exposure by varying the separation between mask and photosensitive layer according to displacement Talbot lithography, or by using a constant gap that is at least as large as the distance required for forming a stationary image according to achromatic Talbot lithography.
  • a frequency-tripled diode-pumped solid-state laser 1 emits a high- frequency (many kHz) pulsed beam of light at 355nm wavelength, that has a Gaussian intensity profile is polarized in the xz plane.
  • the beam after passing a shutter 2, is incident firstly on a xz-plane beam expander 3, comprising a cylindrical concave lens 4 that refracts the light in the xz plane and a cylindrical convex lens 5 that re-collimates the light in this plane to produce a beam with a 1/e 2 diameter of ⁇ 10mm.
  • a xy-plane beam transformer 6 comprising firstly a linear diffuser 7 that scatters the light over a narrow range of angles in the xy plane.
  • the diffuser 7 is mounted on a stage 8 for displacing the diffuser in the y direction during an exposure.
  • the linearly scattered light from the diffuser 7 illuminates a tandem pair of cylindrical micro-lens arrays 9a and 9b that are arranged according to standard principles for beam homogenization in order to produce a uniform intensity distribution in the xy plane.
  • Such cylindrical micro-lenses are available from such companies as Advanced MicroOptic Systems.
  • a cylindrical lens combination 10 re-collimates the divergent light in the from the cylindrical micro-lenses 9a, 9b to produce an elongated beam with a substantially rectangular intensity profile over a length of >13cm. At each end of the elongated beam, outside of this length, the intensity falls to zero in an arbitrary uncontrolled way.
  • the degree of collimation of the beam illuminating any particular point of the grating pattern in the mask needs to be sufficiently good in the plane of diffraction in order that the pattern printed on the photoresist-coated substrate is well resolved.
  • the degree required depends on the period of the mask pattern and on the separation of the mask and substrate. Since the period of the grating to be printed in this embodiment is 0.25pm and the mask-substrate separation to be used is 360pm, the collimation required ⁇ 0.1mR.
  • the optical system shown in fig. 1 is therefore designed according to standard optical principles in order to achieve this as well as to produce the required uniformity of intensity along the length of the elongated beam.
  • the angle of incidence of the light at the mask at the ends of the beam i.e. in the regions of the beam that produce the overlapping exposures, are accurately the same in the plane of diffraction, otherwise the grating lines printed in the two overlapping sub-exposures will not be accurately aligned, so could produce an unacceptable non-uniformity.
  • the accuracy of angular alignment required is a small fraction, typically 1/10, of the collimation required, so for this embodiment should be ⁇ 10pR.
  • the optical system of fig 1 in particular the cylindrical lens combination 10, is therefore designed, assembled and adjusted according to standard optical principles, especially with respect to minimizing spherical aberrations.
  • a “Laser Analyzing Telescope” of the type manufactured by the company Duma Optronics Ltd, Israel, may be used.
  • the telescope focuses an illuminating collimated beam to spot on a high-resolution CCD array, and determines the angle of the beam from the position of the spot on the array with a measurement accuracy of ⁇ 5pR.
  • the relative angles of the light in the“overlap regions” at the two ends of the beam may thus be measured by viewing the light with the telescope mounted on a sufficiently flat surface and displacing it across the surface to measure the two ends of the beam.
  • the angle of the light in the overlap regions of the elongated beam may be alternatively measured with respect to the mask (by measuring the angle of the beam reflected from the mask) prior to each sub-exposure so to ensure that the lines of the superposed printed gratings are accurately aligned in the overlap regions.
  • the output beam of the xy-plane transformer 6 is then incident on an apodization filter 11 whose transmission varies in the y direction over a ⁇ 13cm length in the manner illustrated in fig. 2.
  • apodization, or linear variable neutral transmission, filters may be obtained from, for example, Reynard Corporation in the U.S.
  • the variation of transmittance is produced by a variation in thickness, and therefore absorption, of a metal or metallic alloy on a fused silica substrate.
  • the filter (and the apodization filters used in later embodiments) may be additionally coated with anti-reflection coatings to enhance the overall transmission.
  • the beam transmitted by the apodizing filter is therefore uniform over a central section of length ⁇ 90mm and its intensity falls linearly to zero over a distance of ⁇ 10mm at each end of the beam.
  • Fig. 3 illustrates the location of the filter in the illuminating beam.
  • the transmitted beam is then focused in the xz plane by a cylindrical convex lens 12 such that the light rays at the 1/e 2 intensity values converge with angles of ⁇ 1.5°.
  • phase grating pattern 17 consisting of parallel lines with a period of 0.5pm and line/space ratio of ⁇ 1 that are etched into a fused silica substrate so as to provide high 1 st order efficiency for light at 355nm.
  • the grating area is ⁇ 200mm x 200mm and the pattern 17 is oriented with the grating lines in the x direction.
  • Such a mask may be produced using standard e-beam lithography to form the pattern in a chrome mask, then RIE etching the spaces into the substrate and finally stripping the chrome.
  • the mask pattern may be alternatively formed by holographic exposure or by DTL exposure from a master mask with twice the period, that is, 1 pm.
  • a substrate 18 coated with a layer of a standard i-line-sensitive photoresist is on a vacuum chuck 19 that is attached to a carriage 20 of an x-direction scanning stage 21 , which is mounted onto a y-direction stepping stage 22.
  • the stages are selected so that their pitch, yaw and roll characteristics are suitable for obtaining the required overlay accuracy of the grating lines in the regions of overlapping sub-exposures. In particular, their magnitude should preferably be less than the requirement on the angular alignment accuracy of the light in the overlap regions of the elongated beam, so should be preferably ⁇ 10pR.
  • the angle of incidence of the light on the mask (in the plane of diffraction of the grating pattern) in the overlap regions may be alternatively measured and adjusted prior to each sub-exposure, which relaxes the requirements on the yaw, pitch and roll motions of scanning and stepping stages.
  • the mask 16 is supported from above by a vacuum chuck and a mask positioning system (not shown in the diagram) that enables the mask 16 to be arranged parallel and at a selected distance from the photoresist-coated substrate 18.
  • the mask positioning system is also mounted to the carriage 20 of the x-direction scanning stage 21. Using the mask positioning system and a gap-measuring device of the type described in U.S. Pat. no.
  • the separation between the mask 16 and substrate 18 is adjusted to a value of -360 pm.
  • the Talbot image planes produced by the different angles of incidence form, according to the teachings of US Pat. Nos. 8,524,443 and 9,007,566, a continuum with increasing distance, and so the transveral intensity distribution becomes constant with further increase in distance from the mask.
  • the positions of the carriage 20 on the scanning stage 21 and the position of the latter on the y-direction stepping stage 22 are arranged so that the section of the elongated beam 15 with uniform intensity can scan across the top (-y) half of the mask pattern.
  • a first sub-exposure is performed by opening the shutter 2 and displacing the carriage 20 of the x-direction stage 21 so that the illumination beam 15 is scanned with constant speed across the length of the mask pattern 17 such that the top half of the mask pattern 17 receives a uniform time- integrated exposure across its complete length.
  • the scan speed is selected in relation to the power per unit length of the beam 15 and the sensitivity of the photoresist so that the time- integrated energy density exposing the photoresist is suitable for forming the desired microstructure on the substrate 18 after photoresist development.
  • the linear diffuser 7 is displaced back and forward in the y-direction with sufficient speed by the stage 8 so that intensity speckles are suppressed in the time- integrated exposure of the photoresist.
  • a second sub-exposure is now performed in the same way as the first in order the bottom (+y) half of the mask pattern 17 receives a uniform time- integrated exposure across its complete length.
  • the areas of the mask pattern 17 scanned in the two sub-exposure overlap by the fall-off distance of 10mm.
  • the direction of fall-off across the overlap region is opposite for the two sub-exposures and so the superposed energy densities add up to produce a uniform mask exposure across the overlap.
  • the complementarity of the intensity fall-offs at the two ends of the beam leads to a uniform intensity across the overlap region.
  • the grating pattern 17 in the mask 16 diffracts light in the y direction, a uniform mask exposure does not ensure that the intensity distribution exposing the photoresist is uniform across the overlapping sub-exposures.
  • the intensity distribution of the aerial image exposing the photoresist is produced by the beams diffracted by the grating pattern 17 in the mask 16, as is schematically illustrated in fig. 5.
  • the graph at the top of the figure shows the linear fall-off of the intensity illuminating the grating in the mask at the edge for the exposure beam.
  • the width of the intensity fall-off, or tapered region, is w.
  • Point D on the photoresist is illuminated by 1 st diffraction orders emanating from points A and C on the mask grating and by 0 th order light from point B.
  • the relative intensities of the uniform section of the beam and the light illuminating points A, B and C are respectively l 0 , l A , IB and l c as annotated in the graph.
  • the energy density distribution of the time- integrated aerial image formed at the photoresist by each sub-exposure in this embodiment can be determined by calculating the interference intensity distribution formed by each pair of 1 st , 2 nd and higher orders diffracted by the mask and then adding them together with the 0th order distribution.
  • the contrast of the integrated distribution is then given by (l max - lmin)/(lmax+lmin) , where l max and I mjn are the maximum and minimum values of intensity across the integrated distribution.
  • the substrate 18 is removed from the exposure system and the photoresist is developed using standard techniques.
  • the resulting seamless grating has, in accordance with the teaching of U.S. Pat. no. 8,368,871 , a period of 0.6pm, i.e. half of that of the grating in the mask. Further exposures using further photoresist-coated substrates may be performed to optimize the exposure conditions depending on the requirements of the application.
  • fig.1 schematically shows a particular arrangement of optics for generating an elongated uniform beam and directing it at the mask 16
  • the main optical system may be configured vertically
  • the cylindrical lens 12 shown before the mirror 13 may instead be after the mirror
  • the z- direction expansion module 3 and y-direction transformation module 6 may be interchanged with or without suitable modification of the internal optical components
  • the beam homogenization along the direction of elongation may be performed by means other than with microlens arrays 9a, 9b
  • the z-direction beam expansion in module 3 may be instead performed by two convex cylindrical lenses
  • the range of angles in the xz plane introduced by the convex cylindrical lens 12 may be alternatively introduced by a concave cylindrical lens that produces a divergence rather than a convergence of the light towards the mask
  • y- direction beam expansion may be included before the microlens arrays 9a, 9b.
  • the cylindrical lens combination 12 which is shown as a single lens is preferably composed of a number of cylindrical lens elements in order to minimize spherical aberration, the selection of which may be routinely determined and optimized by one normally skilled in optical design according to the exact requirements of the application.
  • a different apodization filter is used, one whose transmittance varies at each of the beam according to a cosinusoidal profile and with the same fall-off distance of 10mm.
  • the complementarity of the cosinuosoidal intensity fall-offs at the two ends of the beam, which leads to a uniform intensity across the overlap region, is illustrated in fig. 7.
  • Using the same theoretical method to calculate to variation of the contrast across the overlap region of the two sub-exposures yields the curve with the red dashes shown in fig. 6.
  • the overall variation in contrast is significantly less than that obtained with linear fall-off filter and there is smoother transition at the two ends of the taper, i.e. without the dips present in the blue curve of fig. 6.
  • Other apodization filters with similarly smooth transition profiles can be expected to similarly reduce the contrast variation. Simulations such as the one described here can be used to optimize this profile.
  • the taper profile one must ensure that the summation of the intensity of the two beams remains constant (and equal to untampered regions) over the seam region. Variations in this summation, for example up to 1 %, 5% or 10%, may be allowed depending on the uniformity requirements of the performed exposure.
  • Fig. 8 illustrates the dependence of the uniformity across the overlap region on the width of the taper in the case of a cosinusoidal taper profile.
  • the illumination wavelength and mask properties are same as the ones used in the previous example.
  • Three plots show the image contrast for three different widths (2mm, 5mm and 10mm) of the taper region. As the figure shows the degradation in contrast goes down strongly with increasing taper width. Depending on the requirements of the exposure one can choose the required taper width.
  • Fig. 9 illustrates the sensitivity of the intensity across the overlap region on an offset of the two exposed areas from the ideal relative positions for the case of a cosinusoidal taper profile.
  • the parameters of the mask and the wavelength are same as described in the previous examples and the taper width is again 10mm.
  • Three plots are shown corresponding to three different positioning of the two exposures on both sides of the seam region.
  • the two tapers are positioned so that the total illuminating beam intensity remains constant.
  • the tapers are displaced in the lateral direction (direction parallel to the mask surface and perpendicular to grating lines in fig. 5) by a certain amount.
  • the two exposures are moved towards each other (i.e. the beam overlap is increased) by 100um. This leads to an increase of peak image intensity in the overlap region.
  • the third case offset— 100um
  • the two tapered beams are moved away from each other (i.e. the beam overlap is decreased) by 100um. In this case a decrease of peak image intensity in the overlap region is calculated.
  • the plots show that the effect on exposure intensity is approximately 1% for a 100um error in beam positioning. Based on such results and the printing uniformity required for the particular application, the accuracy required of the stepping of the illumination beam between the two sub-exposures, which is equivalently performed by the y-stepping stage 22 in fig. 1 , may be appropriately determined.
  • a different type of apodization filter is used, one whose linear variation of transmittance at each end of the elongated beam is produced instead by a half-tone mask.
  • the pattern is formed using standard chrome mask fabrication techniques on a fused silica substrate. With reference to fig. 10, the pattern for apodizing each end of the elongated beam is a “saw-tooth” pattern comprising a periodic sequence of triangular apertures that extends across the complete width of the elongated beam (i.e. in the z direction).
  • the mean transmittance of a slice of the aperture array varies linearly in the y-direction from the apex of the apertures to their base.
  • the period of the apertures selected should be substantially smaller than the width of the illuminating elongated beam, so that the variation of transmitted intensity across the width of the beam approximates well to a Gaussian profile.
  • the saw-tooth period should be ⁇ 1/10 of the 1/e 2 beam diameter of the illuminating Gaussian beam, so ⁇ 1mm is suitable for this embodiment.
  • the period should be very much larger than the wavelength so that diffraction orders generated by the periodic aperture array (and the large spatial coherence of the illuminating beam in the z-direction) diverge at small angles (preferably ⁇ 1 °) so that they propagate through the subsequent optics to the exposure plane.
  • the individual apertures in this embodiment have a triangular shape in order to produce a linear fall-off of intensity at the ends of the beam
  • other shapes of aperture may be employed for obtaining other profiles of fall-off, for example a cosinusoidal shape may be used for obtaining a cosinusoidal fall-off.
  • the saw-tooth apodization filter is additionally oscillated in the z-direction (see axes in fig. 10) during the exposure by at least one period of the aperture array, in order that the z-direction intensity distribution of the transmitted beam has a more Gaussian profile.
  • a different type of half-tone apodization filter is used.
  • a 0 th -order half-tone mask is used so that only the 0 th -diffracted order propagates to the exposure plane.
  • the filter is formed as a pattern in chrome on a fused silica plate using standard mask making lithographic techniques.
  • Figs. 11a and 11 b illustrate schematically the design of the filter at the left end of the elongated beam.
  • the filter is positioned at the end of the uniform part of the beam incident on the filter (i.e. not in the region where the intensity falls off to zero after the filter).
  • the filter is composed of an array of cells each of dimensions a y x a z (the y and z axes being consistent with those shown in fig. 1). Within each cell there is an amplitude grating with the same period p, whose lines and spaces are parallel to the y axis in order that the 1 st and higher orders diffracted by the gratings are diffracted orthogonal to the direction of beam elongation.
  • the period of the grating in each of the cells is selected to be 10pm so that the resulting angle of the first diffraction orders ( ⁇ 2°) enables them and higher orders to be blocked at a distance of ⁇ 50cm after the apodization filter where they have separated from the main beam (whose ⁇ 1/e 2 width is ⁇ 10mm) so that just the 0 th order propagates to the exposure plane.
  • the length of the grating lines and spaces within each cell is the same and corresponds to the length of the cell, a y , and the width of the grating, b, is the same from cell to cell in the z direction but varies from cell to cell in the y direction.
  • the ratio b/a z is hereafter referred to as the cell fill factor.
  • the width of the chrome lines varies along the length of the lines within each cell, the variation being the same from cell to cell in the z direction (so the transmittance of the filter is constant in the z direction) but varies from cell to cell in the y direction.
  • the ratio of the width of the chrome to the grating period, w/p, is hereafter referred to as the duty cycle.
  • the mean transmittance, T, of an elemental region at y coordinate, y c , of each cell depends on the local efficiency of the 0 th order diffracted by the region, and on the fill factor of the grating in the cell. It may be calculated from:
  • Fig. 12 shows the range of transmittances possible from varying the duty cycle from 0 to 1 and from varying the fill factor from 0.1 to 1. From this it can be seen that all values of transmittance from 0 to 100% are obtainable with suitable choice of duty cycle and fill factor, and without requiring the duty cycle to be too small (e.g. ⁇ 0.025) or too large (e.g. >0.975) that it becomes a problem to form the linewidth of chrome in the mask.
  • the value of a z should be small in relation to the 1/e 2 width of the illuminating beam, but large in relation to the period of the filter gratings in the filter. Typically, 1/10 of the 1/e 2 beam width may be used, so ⁇ 1mm for the case considered here.
  • a z should be much larger than the wavelength to ensure that negligible diffraction is produced by the cells in the y direction, which would degrade the resolution of the printed image.
  • the grating elements in the 0 th order half-tone mask are instead phase gratings.
  • the structure of the half-tone mask forming the fall-off of intensity distribution at each of the end of the elongated beam is a one-dimensional grating of the type employed in the third embodiment, that is, with duty cycle varying along the lines in the direction of beam elongation, but the period is selected to be much smaller than employed in the third embodiment in order that the 1 st and higher-order transmitted beams are diffracted at much larger angles so that they can be blocked before they illuminate the periodic mask pattern in the exposure plane, and the variation of duty cycle along the lines of the half-tone mask is designed so that the relative intensity of the Oth-order diffracted beam varies over the fall-off distance to produce the required profile of intensity variation (or power per incremental distance variation).
  • the intensity fall-off at each end of the elongated beam is produced instead by different types of aperture that periodically displace with respect to the end of the beam.
  • the resulting effective intensity transmitted at a point along the beam in the direction of beam elongation rather refers to the time-averaged intensity over the periodic motion of the aperture.
  • the aperture may be made of an opaque material or a scattering material that effectively blocks the beam from reaching the substrate.
  • the aperture may be placed near the substrate or some other place along the beam path.
  • Fig. 13 illustrates an example of such an aperture employed in a fifth embodiment.
  • the aperture has a straight edge and is repeatedly displaced, or oscillated, into and out of one end of the elongated beam by a distance w.
  • the illuminating beam has a width of d in the vertical direction and is elongated in the horizontal direction.
  • the profile of the oscillating motion (i.e. dependence of speed on position) of the straight edge is calculated to obtain the required intensity taper.
  • Linear motors may be used to provide the actuation with sufficient speed and acceleration.
  • Position sensors such as interferometers or encoders can be used to measure the position of the aperture which can then be used to control the actuation to obtain a desired motion profile in a closed-loop operation.
  • the movement speed should be adjusted according to exposure time to provide the desired intensity taper when it is averaged over the exposure duration. If the illuminating beam is pulsed then the time averaging operation should also take into account the pulse structure of the beam. If such an illumination beam is scanned over a stationary mask then the scan speed, and if present, pulse frequency of the illuminating beam, should also be considered in obtaining a desired intensity distribution (taper) after the time averaging operation. If the illumination is pulsed, the frequency of oscillation of the aperture is advantageously adjusted or varied during the exposure so as to avoid stroboscopic effects in the exposure. The moving aperture may be moved once or multiple times (e.g. back and forth) during the exposure.
  • Fig. 14 illustrates another example of an aperture that periodically displaces at each end of the elongated beam in a sixth embodiment.
  • the aperture is repeatedly moved, in an oscillating motion in the vertical direction across the width of the end of the elongated beam to produce a desired intensity taper.
  • the shape of the aperture determines the tapering profile.
  • the required shape can be readily calculated by considering a certain point P in the taper area and calculating the open to closed time ratio as the aperture moves over it. For example to obtain a sinusoidal distribution an aperture similar to an inverse cosinus function can be used.
  • Such an aperture can be made with current manufacturing techniques such as laser cutting or wire discharge machining.
  • the speed of the aperture movement should be adjusted so that the desired intensity profile can be obtained after the time averaging operation with a desired accuracy. Also in this case the arguments with respect to exposure time, scan speed and pulse structure of the beam need to be taken into account in performing the time averaging.
  • Fig. 15 illustrates another example of an aperture that periodically displaces at each end of the elongated beam in a sixth embodiment.
  • a shaped aperture is rotated near the end of the elongated to yield a desired intensity taper.
  • the shape of the aperture determines the taper profile. This can be easily calculated by again considering proportions of open and close times for a certain point in the illuminating beam. To obtain a sinusoidal profile again a shape similar to an arccos function may be used but this will be modified due to the circular motion. Therefore the diameter of the aperture also has a role in this case.
  • This method may have the advantage that the aperture can be moved at fast speeds easily (facilitating an accurate time averaged profile) with rotary motors. Also in this case the frequency of rotation should preferably be adjusted or varied during exposure to avoid stroboscopic effects in the exposure if the illumination is pulsed.
  • the apodization filter 11 shown in fig. 1 is located in the beam-path before the cylindrical optic 12 for introducing the range of angles of incidence in the plane orthogonal to the direction of beam elongation
  • the apodization filter whatever its type (i.e. absorption, half-tone mask, moving aperture, etc), may be alternatively located in the beam path after the cylindrical optic 12, or before the lens 10 that collimates the light in the plane of beam elongation.
  • the latter can be advantageous in the case of a very long elongated beam because it enables a filter on a much smaller substrate so facilitates fabrication.
  • the exact fall-off profile of the filter should take account of perturbation of the profile produced by propagation of the beam from the filter to the exposure plane, especially if the beam is subsequently passes through a lens which collimates the light in the plane of beam collimation. Such perturbations may be determined using standard optical design methods, such as using ray-trace S/W.
  • the fall-off profile designed in the filter should therefore preferably also compensate for perturbation to the transmitted intensity distribution produced by the beam path and optics between the filter and the exposure plane.
  • three or more sub-exposures may be performed by repeating the procedures of the embodiment and using the same size of periodic pattern in the mask and an elongated beam of shorter length, or preferably by using masks with much larger periodic patterns so as to print larger uniform patterns onto substrates.
  • the laser emits light at a wavelength of 355nm
  • the laser may be, for example, an excimer laser that emits light at a deep- UV wavelength of, for instance, 248nm or 193nm.
  • the mechanical systems are designed and configured so that it is the illumination beam that is scanned with respect to a stationary mask and substrate during each sub-exposure and/or stepped with respect to a stationary mask and substrate between the sub-exposures.
  • the illumination and translation stages in these embodiments are configured so that either the complete illumination system is scanned and/or stepped during and between the sub-exposures respectively, or just the optics (i.e.
  • apodization filter 11 or a part of the optics, such as the apodization filter 11 , cylindrical lens 12 and mirror 13 shown in fig. 1 or other optics performing equivalent functions, are scanned and/or stepped during and between the sub-exposures respectively.
  • the sub-exposures are performed simultaneously by two or more illumination systems each of which produces an elongated beam, from one or more laser sources, for scanning across the mask and substrate.
  • the shape of the scanning beam is not elongated but its dimensions at the mask are the same or similar in the scanning and orthogonal directions.
  • a beam may be generated, for example, by a similar configuration as shown in fig. 1 , from the same or other laser source, by using spherical optics and spherical microlens arrays to form a beam with a square cross-section, and using a cylindrical lens as in fig. 1 to introduce the required range of angles of incidence in the xy plane at the mask.
  • the beam size in the direction of the scan is larger than in the orthogonal direction. This may be achieved by additionally using a concave cylindrical lens to produce the range of angles required at the mask such that the cross-section of the beam is elongated from a square cross-section to one that is longer in the scanning direction.
  • the structure on the mask may be a 1 D grating or a two-dimensional periodic pattern and the scanning exposure is performed using DTL, ATL or another of the DTL-equivalent techniques of the prior art in which the beam illuminating the mask is instead collimated in both planes of incidence rather than possessing range of angles of incidence in one plane.
  • a suitable exposure system for a DTL exposure is illustrated in fig. 16. The system is the same as in fig.
  • the mirror 13 is instead tilted such that the elongated beam illuminates the mask at normal incidence in both planes.
  • the positioning system of the mask includes piezo-electric actuators that enable a high-precision displacement of the mask 17 in the z direction during the exposure.
  • Overlapping sub-exposures are performed using the same procedures of the previous embodiments and using any of the apodization filters (stationary or moving) employed in those previous embodiments, except that during each of the two sub exposures the gap between the mask and photoresist-coated substrate is changed at a constant speed such that the change of gap resulting from the beam scanning a distance corresponding to the length of the mask pattern, L x , given by:
  • L T is the Talbot distance of the periodic pattern being exposed and W FWHM is the full- width at half-maximum of the illumination beam (in the x direction).
  • the Talbot distance is calculated as ⁇ 1.5pm. If L x is 200mm and the 1/e 2 full width of the beam is 10mm (so W FWHM 3 ⁇ 4 6mm), then Agap 3 50pm.
  • the gap changes by at least 2x the Talbot distance as the beam scans across any particular part of the mask pattern, and so according to the teaching of U.S. Pat. no. 8,525,973 a periodic pattern is printed with high uniformity onto the substrates.
  • any two-dimensional periodic pattern can be printed, with the speed of gap displacement required during each sub-exposure being determined in the same way as above.
  • DTL exposures may be performed with the apparatus of fig. 16 using a different procedure.
  • the gap may be instead oscillated with sufficiently high frequency and with a suitable displacement amplitude and profile for each oscillation (in view of the teaching of U.S. Pat. no. 8,525,973) such that the scanning beam prints a uniform pattern onto the substrate.
  • An ATL-type exposure may be alternatively carried using a similar exposure system as that illustrated in fig. 16.
  • a laser source with a sufficiently large spectral linewidth is employed that enables the stationary image to be formed at a reasonably small distance from the mask, which is desirable for printing a high-resolution pattern.
  • a laser diode operating at 405nm wavelength may be employed whose linewidth is typically ⁇ 0.5nm..
  • the beam shaping and homogenizing optics should therefore be appropriately selected using standard optical design principles to produce an elongated beam with uniform intensity along its length and preferably a Gaussian intensity profile across it width.
  • the beam is directed to the mask and photoresist-coated substrate so that it, as in fig. 16, illuminates the mask at normal incidence.
  • any of the types of apodization filter described in the previous embodiments may be employed, though should be designed for use at 405nm wavelength.
  • the material and variation in thickness thereof employed for the absorption-type filter of the first embodiment should be suitable for this wavelength.
  • the procedure may be substantially the same as employed in the first embodiment except that the separation between the mask and photoresist-coated substrate should be according to the teaching of U.S. Pat. no. 8,841 ,046.
  • the pattern in the mask is a grating with period 600nm
  • the gap should be adjusted 3 1.44mm so that the stationary image if formed at the photoresist.
  • Two or more sub-exposures may be carried out with overlapping of the fall-off regions with linear or other profile in order to print a uniform pattern on the substrate including across the regions where the sub-exposures overlap.
  • each exposure is performed using a rectangular or square cross- section exposure beam of light that is collimated in both planes and is instead stationary on the mask during each sub-exposure.
  • the apodization filter produces a defined complementary fall-off of the intensity distribution at all four edges of the beam, and the beam is stepped with respect to the mask and substrate in x and/or y directions between the different sub-exposures so that the patterns printed in the different sub-exposures overlap along both x-direction and y-direction edges to produce a composite pattern with high uniformity across the overlapping regions.
  • Each sub-exposure may be performed using any of the DTL, ATL or equivalent methods with appropriate selection of the laser source and selection of the illumination optics based on the teaching in the earlier embodiments above.
  • an elongated illumination beam and an elongated mask are together scanned across the substrate to be printed according to the teaching of US Pat. No. 9,182,672.
  • two or more sub-exposures are performed with the mask and illumination beam being stepped in the direction of the mask and beam elongation between the successive sub exposures, such that the regions at the end of the elongated beam with the controlled intensity fall-off overlap between successive sub-exposures to print a uniform composite pattern.
  • the stepping of the mask between successive exposures is performed sufficiently accurately so that the lines and spaces of the superposed gratings printed in the overlapping regions are accurately aligned to form the desired uniform grating.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Abstract

L'invention concerne un procédé d'impression d'un motif périodique de caractéristiques linéaires dans une couche photosensible comprenant la fourniture d'un masque portant un motif de caractéristiques linéaires, l'agencement du substrat parallèle au masque, la génération d'un faisceau allongé pour éclairer le masque avec une plage d'angles d'incidence dans un plan parallèle aux caractéristiques linéaires et avec une puissance uniforme par distance incrémentielle le long de la longueur du faisceau sauf à ses extrémités où la puissance par distance incrémentale tombe à zéro selon des premier et second profils sur une distance de chute, le balayage dudit faisceau dans des première et seconde sous-expositions pour imprimer des première et seconde parties du motif souhaité de telle sorte que les première et seconde parties se chevauchent par la distance de chute, les premier et second profils étant sélectionnés de telle sorte que leur somme sur la distance de chute produise une puissance uniforme par distance incrémentale.
PCT/IB2019/053239 2018-04-19 2019-04-18 Procédés et systèmes pour imprimer de grands motifs périodiques par chevauchement de champs d'exposition WO2019202551A1 (fr)

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JP2020557272A JP7044901B2 (ja) 2018-04-19 2019-04-18 露光フィールドのオーバラップにより大きい周期パターンを印刷する方法およびシステム
EP19725868.4A EP3781989B1 (fr) 2018-04-19 2019-04-18 Procédés et systèmes pour imprimer de grands motifs périodiques par chevauchement de champs d'exposition
CN201980026346.XA CN111936935B (zh) 2018-04-19 2019-04-18 用于通过重叠曝光场来印刷大周期性图案的方法和系统
KR1020207029429A KR102467826B1 (ko) 2018-04-19 2019-04-18 노광 필드를 중첩함으로써 큰 주기적 패턴을 인쇄하기 위한 방법 및 시스템
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Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8368871B2 (en) 2010-02-16 2013-02-05 Eulitha Ag Lithographic fabrication of general periodic structures
WO2013029985A2 (fr) * 2011-09-02 2013-03-07 Suss Microtec Lithography Gmbh Procédé de fabrication de structures périodiques sur une surface d'un substrat
US8524443B2 (en) 2010-07-07 2013-09-03 Eulitha A.G. Method and apparatus for printing a periodic pattern with a large depth of focus
US8525973B2 (en) 2010-10-13 2013-09-03 Eulitha A.G. Method and apparatus for printing periodic patterns
US8841046B2 (en) 2004-10-22 2014-09-23 Eulitha Ag System and a method for generating periodic and/or quasi-periodic pattern on a sample
US8904316B2 (en) 2010-11-16 2014-12-02 Eulitha A.G. Method and apparatus for printing high-resolution two-dimensional periodic patterns
US9007566B2 (en) 2010-07-07 2015-04-14 Eulitha Ag Apparatus and method for printing a periodic pattern with a large depth of focus
US9036133B2 (en) 2010-02-16 2015-05-19 Eulitha Ag Lithographic fabrication of general periodic structures by exposing a photosensitive layer to a range of lateral intensity distributions
US9182672B2 (en) 2010-12-23 2015-11-10 Eulitha Ag System and method for production of nanostructures over large areas
US9280056B2 (en) 2011-01-12 2016-03-08 Eulitha A.G. Method and system for printing high-resolution periodic patterns
US9658535B2 (en) 2013-03-18 2017-05-23 Eulitha A.G. Methods and systems for printing periodic patterns
WO2017103817A1 (fr) * 2015-12-14 2017-06-22 Eulitha A.G. Procédés et systèmes pour imprimer des réseaux d'impression de caractéristiques

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030138742A1 (en) * 2000-04-11 2003-07-24 Nikon Corporation Exposure method and exposure apparatus
KR100634437B1 (ko) 2004-10-05 2006-10-16 삼성전자주식회사 반도체 소자 제조용 마스크 및 그 제조방법
TWI456267B (zh) 2006-02-17 2014-10-11 Zeiss Carl Smt Gmbh 用於微影投射曝光設備之照明系統
US8264667B2 (en) 2006-05-04 2012-09-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using interferometric and other exposure
TWI413868B (zh) * 2007-06-12 2013-11-01 Ind Tech Res Inst 製作週期性圖案的步進排列式干涉微影方法及其裝置
JP5868492B2 (ja) 2011-05-06 2016-02-24 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系
US20140307242A1 (en) 2011-06-01 2014-10-16 Eulitha A.G. Method and apparatus for printing periodic patterns using multiple lasers
JP6356510B2 (ja) * 2014-07-15 2018-07-11 東芝メモリ株式会社 露光方法及び露光装置
CN104777674B (zh) 2015-04-27 2018-10-19 深圳市华星光电技术有限公司 一种用于光配向的光罩装置及应用设备

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8841046B2 (en) 2004-10-22 2014-09-23 Eulitha Ag System and a method for generating periodic and/or quasi-periodic pattern on a sample
US8368871B2 (en) 2010-02-16 2013-02-05 Eulitha Ag Lithographic fabrication of general periodic structures
US9036133B2 (en) 2010-02-16 2015-05-19 Eulitha Ag Lithographic fabrication of general periodic structures by exposing a photosensitive layer to a range of lateral intensity distributions
US8524443B2 (en) 2010-07-07 2013-09-03 Eulitha A.G. Method and apparatus for printing a periodic pattern with a large depth of focus
US9007566B2 (en) 2010-07-07 2015-04-14 Eulitha Ag Apparatus and method for printing a periodic pattern with a large depth of focus
US8525973B2 (en) 2010-10-13 2013-09-03 Eulitha A.G. Method and apparatus for printing periodic patterns
US8904316B2 (en) 2010-11-16 2014-12-02 Eulitha A.G. Method and apparatus for printing high-resolution two-dimensional periodic patterns
US9182672B2 (en) 2010-12-23 2015-11-10 Eulitha Ag System and method for production of nanostructures over large areas
US9280056B2 (en) 2011-01-12 2016-03-08 Eulitha A.G. Method and system for printing high-resolution periodic patterns
WO2013029985A2 (fr) * 2011-09-02 2013-03-07 Suss Microtec Lithography Gmbh Procédé de fabrication de structures périodiques sur une surface d'un substrat
US9658535B2 (en) 2013-03-18 2017-05-23 Eulitha A.G. Methods and systems for printing periodic patterns
WO2017103817A1 (fr) * 2015-12-14 2017-06-22 Eulitha A.G. Procédés et systèmes pour imprimer des réseaux d'impression de caractéristiques

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOLAK ET AL.: "Achromatic spatial frequency multiplication: A method for production of nanometer-scale periodic features", J. VAC. SCI. TECHNOL., vol. B23, no. 6, 2005

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US20210103222A1 (en) 2021-04-08
US11422471B2 (en) 2022-08-23
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EP3781989B1 (fr) 2023-06-14
JP7044901B2 (ja) 2022-03-30
EP3781989A1 (fr) 2021-02-24
JP2021518930A (ja) 2021-08-05
CN111936935A (zh) 2020-11-13
KR102467826B1 (ko) 2022-11-18

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