WO2019168206A8 - 表面修飾炭素材料及び表面修飾炭素材料の製造方法 - Google Patents

表面修飾炭素材料及び表面修飾炭素材料の製造方法 Download PDF

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Publication number
WO2019168206A8
WO2019168206A8 PCT/JP2019/010720 JP2019010720W WO2019168206A8 WO 2019168206 A8 WO2019168206 A8 WO 2019168206A8 JP 2019010720 W JP2019010720 W JP 2019010720W WO 2019168206 A8 WO2019168206 A8 WO 2019168206A8
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WIPO (PCT)
Prior art keywords
carbon material
modified carbon
chemical modification
present
modification group
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PCT/JP2019/010720
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English (en)
French (fr)
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WO2019168206A1 (ja
Inventor
一邦 田原
戸部　義人
石川　透
有輝 久保
フェイター スティーブン ウィリー ニコラス デ
ブランドン エドワード ハース
ツィー リー
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国立研究開発法人科学技術振興機構
ルーヴァン・カトリック大学
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Application filed by 国立研究開発法人科学技術振興機構, ルーヴァン・カトリック大学 filed Critical 国立研究開発法人科学技術振興機構
Priority to US16/976,514 priority Critical patent/US20210070616A1/en
Priority to EP19761317.7A priority patent/EP3760584A4/en
Priority to JP2020503675A priority patent/JP7158689B2/ja
Priority to CN201980016294.8A priority patent/CN111936417B/zh
Publication of WO2019168206A1 publication Critical patent/WO2019168206A1/ja
Publication of WO2019168206A8 publication Critical patent/WO2019168206A8/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/20—Graphite
    • C01B32/21—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
    • H01M4/96—Carbon-based electrodes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/22—Electronic properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
    • C01P2004/22—Particle morphology extending in two dimensions, e.g. plate-like with a polygonal circumferential shape
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/50—Fuel cells

Abstract

本発明は、グラフェンの表面に化学修飾基を付加した表面修飾炭素材料であって、グラフェンの表面に対する走査型プローブ顕微鏡像のフーリエ変換像に、化学修飾基の多数の付加位置に対応した一次元周期性が観察され得る表面修飾炭素材料である。本発明の表面修飾炭素材料は、バンドギャップを有することで電子的に動作を制御できるセンサやその他の電子デバイスとして用いることができる。
PCT/JP2019/010720 2018-03-01 2019-02-28 表面修飾炭素材料及び表面修飾炭素材料の製造方法 WO2019168206A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US16/976,514 US20210070616A1 (en) 2018-03-01 2019-02-28 Surface-Modified Carbon Material, and Method for Producing Surface-Modified Carbon Material
EP19761317.7A EP3760584A4 (en) 2018-03-01 2019-02-28 SURFACE MODIFIED CARBON MATERIAL AND PROCESS FOR PRODUCTION OF SURFACE MODIFIED CARBON MATERIAL
JP2020503675A JP7158689B2 (ja) 2018-03-01 2019-02-28 表面修飾炭素材料及び表面修飾炭素材料の製造方法
CN201980016294.8A CN111936417B (zh) 2018-03-01 2019-02-28 表面修饰碳材料以及表面修饰碳材料的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-036704 2018-03-01
JP2018036704 2018-03-01

Publications (2)

Publication Number Publication Date
WO2019168206A1 WO2019168206A1 (ja) 2019-09-06
WO2019168206A8 true WO2019168206A8 (ja) 2020-12-03

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PCT/JP2019/010720 WO2019168206A1 (ja) 2018-03-01 2019-02-28 表面修飾炭素材料及び表面修飾炭素材料の製造方法

Country Status (5)

Country Link
US (1) US20210070616A1 (ja)
EP (1) EP3760584A4 (ja)
JP (1) JP7158689B2 (ja)
CN (1) CN111936417B (ja)
WO (1) WO2019168206A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111244390B (zh) * 2020-01-19 2021-10-08 中南大学 金属氧化物复合自支撑导热碳膜、金属锂负极及其制备和应用
IL294885A (en) * 2020-01-26 2022-09-01 Eexion Energy Ltd Electrodes for electrochemical capacitors based on carbon with an optimized surface area
CN112687802B (zh) * 2020-12-24 2021-11-05 亚洲硅业(青海)股份有限公司 钙钛矿电池的电子传输层及其制备方法、钙钛矿电池

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FR2899132B1 (fr) 2006-03-30 2008-06-20 Commissariat Energie Atomique Procede de traitement d'un fluide a l'aide d'un reseau auto organise adsorbe sur une surface
JP5066768B2 (ja) 2007-09-07 2012-11-07 学校法人近畿大学 修飾炭素質膜
JP5462219B2 (ja) 2011-05-25 2014-04-02 株式会社日立製作所 グラフェンセンサ、該センサを利用した物質種分析装置および該センサを利用した物質種検知方法
CA2872715C (en) * 2012-05-21 2020-06-09 Dario CERICOLA Surface-modified carbon hybrid particles, methods of making, and applications of the same
JPWO2015146779A1 (ja) * 2014-03-26 2017-04-13 東レ株式会社 導電積層体およびそれを用いたタッチパネル
GB201405614D0 (en) * 2014-03-28 2014-05-14 Perpetuus Res & Dev Ltd Particles
GB201405616D0 (en) * 2014-03-28 2014-05-14 Perpetuus Res & Dev Ltd A composite material
JP6345270B2 (ja) * 2014-03-31 2018-06-20 レコ コーポレイションＬｅｃｏ Ｃｏｒｐｏｒａｔｉｏｎ ターゲット質量分光分析の方法
CN106170880B (zh) * 2014-04-14 2020-12-01 英默里斯石墨及活性炭瑞士有限公司 来自包括两亲性有机化合物的分散体的碳质颗粒的无定形碳涂层
JP2017048094A (ja) * 2015-09-04 2017-03-09 パナソニック株式会社 炭素系材料、並びにそれを備える電極及び微生物燃料電池

Also Published As

Publication number Publication date
JPWO2019168206A1 (ja) 2021-04-22
US20210070616A1 (en) 2021-03-11
CN111936417B (zh) 2023-07-21
EP3760584A1 (en) 2021-01-06
JP7158689B2 (ja) 2022-10-24
WO2019168206A1 (ja) 2019-09-06
CN111936417A (zh) 2020-11-13
EP3760584A4 (en) 2022-03-09

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