WO2019148709A1 - 一种量子点发光二极管qled器件及其制作方法、装置 - Google Patents

一种量子点发光二极管qled器件及其制作方法、装置 Download PDF

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WO2019148709A1
WO2019148709A1 PCT/CN2018/088755 CN2018088755W WO2019148709A1 WO 2019148709 A1 WO2019148709 A1 WO 2019148709A1 CN 2018088755 W CN2018088755 W CN 2018088755W WO 2019148709 A1 WO2019148709 A1 WO 2019148709A1
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quantum dot
layer
dot light
transport layer
barrier layer
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English (en)
French (fr)
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王建太
邢汝博
杨小龙
刘会敏
孙萍
韦冬
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Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Govisionox Optoelectronics Co Ltd
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Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Govisionox Optoelectronics Co Ltd
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Priority to US16/419,376 priority Critical patent/US20190273215A1/en
Publication of WO2019148709A1 publication Critical patent/WO2019148709A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used

Definitions

  • the present application relates to the field of display technologies, and in particular, to a quantum dot light emitting diode QLED device and a method and apparatus for fabricating the same.
  • Quantum Dot Light Emitting Diodes is a new type of self-illumination technology that does not require an additional light source. Quantum Dots are tiny semiconductor nanoparticles that are invisible to the naked eye. Particles having a particle size of several nanometers to several tens of nanometers.
  • FIG. 1 it is a schematic diagram of a film structure of an existing QLED device.
  • the cathode film 01, the electron transport layer 02, the quantum dot light emitting layer 03, and the hole transport are mainly included from top to bottom.
  • an electron injecting layer, a hole injecting layer, or the like may also be included, which is not shown in FIG.
  • a transition metal oxide such as zinc oxide, titanium oxide, etc.
  • the electron transport layer and the quantum dot light-emitting layer are generally composed of inorganic materials having semiconductor properties, and the electron transport layer and the quantum dot light-emitting layer are often in direct contact, the transition metal oxide is prepared on the quantum dot light-emitting layer in the prior art.
  • the quantum dot luminescent layer is defective, which in turn affects the performance of the QLED device.
  • the present application provides a quantum dot light emitting diode QLED device and a manufacturing method and device thereof for alleviating the leakage of nanoparticles in a first transport layer formed on a quantum dot light emitting layer in the prior art and affecting the performance of the quantum dot light emitting layer.
  • the problem is to be described in detail below.
  • a quantum dot light emitting diode QLED device comprising: a quantum dot light emitting layer, a first transport layer above the quantum dot light emitting layer, and a first between the quantum dot light emitting layer and the first transport layer a barrier layer, the first barrier layer comprising a polymer electrolyte;
  • the first barrier layer is configured to block at least a portion of the nanoparticles in the first transport layer from leaking to the quantum dot light-emitting layer.
  • the device further comprises: a second transmission layer located under the luminescent layer of the quantum dot;
  • the second barrier layer between the second transport layer and the quantum dot luminescent layer, the second barrier layer comprising a polymer electrolyte.
  • the polymer electrolyte has a network structure.
  • the network structure is composed of a chain polymer electrolyte.
  • the barrier layer has a thickness of 8-15 nm.
  • the polymer electrolyte comprises an amine-based polyfluorene-based conjugated polymer PFN, a phenolic resin PF, a recycled polyethylene terephthalate PETE, a polyetherimide PEI, and a polyparaphenylene. Any one or several materials of dicarboxylic acid plastic PET and polyethylene naphthalate.
  • a method for fabricating a quantum dot light emitting diode QLED device comprising:
  • Forming a quantum dot light-emitting layer Forming a quantum dot light-emitting layer; forming a first barrier layer over the quantum dot light-emitting layer, the first barrier layer comprising a polymer electrolyte; forming a first transport layer over the first barrier layer;
  • the first barrier layer is configured to block at least a portion of the nanoparticles in the first transport layer from leaking to the quantum dot light-emitting layer.
  • a first barrier layer on the quantum dot emitting layer specifically comprising:
  • the first solution is deposited over the quantum dot luminescent layer to form a first barrier layer.
  • the second solvent of the dissolved nanoparticles used in forming the first transport layer is immiscible with the first solvent.
  • the first solvent is a polar solvent and the second solvent is a non-polar solvent.
  • the method further includes:
  • Forming a second transport layer Forming a second transport layer; forming a second barrier layer over the second transport layer, the second barrier layer comprising a polymer electrolyte.
  • the forming a second barrier layer on the second transport layer comprises:
  • the third solution is deposited on the second transport layer to form a second barrier layer.
  • the preset concentration is less than 1 mg/ml.
  • a quantum dot light emitting diode QLED device comprising any of the above quantum dot light emitting diode QLED devices.
  • the present application forms a first barrier layer on the quantum dot light emitting layer of the quantum dot light emitting diode QLED device, and forms a first transport layer on the first barrier layer, the barrier layer comprising a plurality of chain polymers
  • the electrolyte forms a dense network structure, blocks the nanoparticles in the transport layer, and prevents the nanoparticles from being infiltrated into the quantum dot light-emitting layer by gravity, thereby ensuring the light-emitting performance of the quantum dot light-emitting layer.
  • the end groups carried by the polymer electrolyte can modify the surface defects of the nanoparticles at the contact interface between the quantum dot emitting layer and the adjacent transport layer, and modify the nanoparticles in contact with each other, thereby improving the interface defects, and therefore, the barrier layer can be improved. Quantum dot LED QLED device performance.
  • FIG. 1 is a schematic structural view of a quantum dot light emitting diode QLED film layer in the prior art
  • FIG. 2 is a flow chart of a method for fabricating a QLED device provided by the present application
  • FIG. 3 is a second flowchart of a method for fabricating a QLED device provided by the present application.
  • FIG. 4 is a third flowchart of a method for fabricating a QLED device provided by the present application.
  • FIG. 5 is a flow chart of a method for forming a second barrier layer on a second transport layer in the present application
  • FIG. 6 is a schematic structural diagram of a QLED device film layer provided by the present application.
  • FIG. 7a is a second schematic structural diagram of a QLED device film layer provided by the present application.
  • FIG. 7b is a third schematic structural diagram of a QLED device film layer provided by the present application.
  • FIG. 8 is a fourth schematic structural diagram of a QLED device film layer provided by the present application.
  • FIG. 9a is a fifth schematic structural diagram of a QLED device film layer provided by the present application.
  • FIG. 9b is a sixth schematic structural diagram of a QLED device film layer provided by the present application.
  • the embodiment of the present application provides a method for fabricating a QLED device. As shown in FIG. 2, the method mainly includes the following steps:
  • Step 11 Forming a quantum dot luminescent layer.
  • the quantum dot luminescent layer can be prepared by a solution method.
  • the quantum dot light-emitting layer can be formed on a substrate.
  • the method may further include the steps of sequentially forming an anode, a hole transport layer, and the like on the substrate.
  • Step 12 forming a first barrier layer over the quantum dot light-emitting layer, the first barrier layer comprising a polymer electrolyte.
  • the polymer electrolyte is an electrolyte material in the form of a polymer, often a polymer having a dipole, and specifically an ion conductive polymer or an ion exchange membrane.
  • the polymer electrolyte may be an amine-containing polyfluorene-based conjugated polymer PFN, a phenolic resin PF, a regenerated polyethylene terephthalate PETE, a polyetherimide PEI, a poly-terephthalic plastic PET, and a poly Materials such as polyethylene naphthalate PEN.
  • the first barrier layer formed on the quantum dot light-emitting layer is a network structure.
  • the polymer electrolyte is generally chain-shaped, and a plurality of chain polymer molecules of different lengths and different forms are entangled to form a first barrier layer having a relatively dense network structure.
  • the first barrier layer may include not only the above polymer electrolyte, but also other organic or inorganic materials capable of forming a similar barrier structure or contributing to form a dense network structure, so as to strengthen the first The density or barrier capacity of the barrier layer.
  • Step 13 forming a first transport layer on the first barrier layer.
  • a first thickness of the first transport layer may be deposited on the formed first barrier layer by a deposition process, and the material of the first transport layer is inorganic nanoparticles having semiconductor properties. Firstly dissolving the above nanoparticles to form a nanoparticle solution, and then forming a film layer of the nanoparticle solution on the first barrier layer by coating or printing, and finally removing the solvent in the solution by heating/vacuum evaporation. The nanoparticles are left on a barrier layer to form a first transport layer.
  • the nanoparticles may be transition metal oxide materials such as zinc oxide and titanium oxide.
  • the first barrier layer serves to block leakage of nanoparticles in the first transport layer to the quantum dot light-emitting layer.
  • the first barrier layer is located on the quantum dot emitting layer, and the first transport layer is located on the first barrier layer, and the first barrier layer is formed between the quantum dot emitting layer and the first transport layer.
  • a barrier layer is composed of a plurality of chain polymer electrolytes, has a dense network structure, effectively separates the first transport layer and the quantum dot light-emitting layer, and can block most of the nanoparticles, thereby alleviating the leakage of the nanoparticles by gravity.
  • the first barrier layer can alleviate the problem that the nanoparticle leakage in the first transport layer formed on the quantum dot light-emitting layer in the prior art affects the performance of the quantum dot light-emitting layer.
  • the first transport layer involved in the present application may be an electron transport layer or a hole transport layer, as long as the first transport layer is formed on the film layer of the quantum dot light-emitting layer. can.
  • the first transport layer located in the upper layer leak into the quantum dot light-emitting layer due to gravity.
  • a first barrier layer is formed between the quantum dot light-emitting layer and the first transport layer, and a network structure having a certain density is formed by the polymer electrolyte contained in the first barrier layer, thereby blocking the first
  • the nanoparticles in a transport layer leak into the quantum dot luminescent layer to avoid mutual solubility between the first transport layer and the quantum dot luminescent layer during fabrication.
  • the method for fabricating the QLED device provided by the embodiment of the present application, as shown in FIG. 3, specifically includes:
  • Step 11 Forming a quantum dot luminescent layer.
  • the method steps of forming the quantum dot luminescent layer may be as shown in the above embodiment, and details are not described herein again.
  • the process of forming the first barrier layer in step 12 can be specifically implemented by the following steps 121 and 122.
  • Step 121 Dissolving the polymer electrolyte with a first solvent to form a first solution having a predetermined concentration.
  • a first solvent for dissolving the polymer electrolyte is determined; in view of the need to fabricate the first barrier layer on the quantum dot luminescent layer, in order to avoid solvent miscibility between adjacent film layers, an adjacent film is required.
  • the solutes are dissolved by using mutually orthogonal (ie, mutually incompatible) solvents. Since the solvent for dissolving the nanoparticles in the quantum dot emitting layer is generally a non-polar solvent, a polar solvent is required to dissolve the polymer electrolyte.
  • a polar solvent-alcohol solution is selected, which has good solubility to the polymer electrolyte, and is orthogonal to the non-polar solvent, thereby avoiding mutual solubility with the quantum dot film layer. phenomenon.
  • Step 122 depositing the first solution on the quantum dot light-emitting layer to form a first barrier layer.
  • the first barrier layer is configured to block at least a portion of the nanoparticles in the first transport layer from leaking to the quantum dot light-emitting layer.
  • the deposition process specifically includes coating, dip coating, spraying, printing, spin coating, etc., and the solution is uniformly deposited on the quantum dot emitting layer by the above deposition process, and finally the solvent can be evaporated by heating/vacuum method.
  • the formation of the desired film layer is relatively simple and the film forming quality is high.
  • the predetermined concentration should be less than 1 mg/ml.
  • the first barrier layer is too thick, it will hinder electron conduction, reduce the conductivity, and have a certain insulating effect, which affects the overall performance of the QLED device.
  • the network structure is not dense enough to effectively block the nanoparticle infiltration. Leaks into the quantum transport layer.
  • the thickness of the first barrier layer in order to ensure that the chain polymer electrolyte can form a network structure of a certain density, it is necessary to control the thickness of the first barrier layer to be greater than or equal to 8 nanometers and less than or equal to 15 nanometers in order to form a barrier function.
  • the first barrier layer at the same time, can also ensure that the first barrier layer formed has good electrical conductivity and reduces the hindrance to electron transport.
  • the method further includes the step 13 of forming a first transport layer on the first barrier layer.
  • step 12 shows a specific implementation of the foregoing step 12.
  • step 12 may be implemented in other manners, and the embodiment of the present application does not limit this.
  • the first solvent used is incompatible with the solvent used to form the quantum dot light-emitting layer, and further, in order to avoid the first barrier layer and the first transport layer located thereon Solvent miscible occurs therebetween, and the second solvent that dissolves the nanoparticles used in forming the first transport layer may be defined to be immiscible with the first solvent.
  • the QLED device formed by the above steps can form a first barrier layer between the first transport layer and the quantum dot light-emitting layer, the first barrier layer being composed of a plurality of chain polymer electrolytes having a dense network structure.
  • the first barrier layer serves to block leakage of nanoparticles in the first transport layer to the quantum dot light-emitting layer during deposition of the first transport layer.
  • the polymer electrolyte is an electrolyte material in the form of a polymer
  • at least a portion of the polyelectrolyte has an end group extending outward from the surface of the layer, and the end group thereof can improve the first transport layer and the second transport layer in contact therewith to some extent.
  • surface defects of the nanoparticles in the quantum dot emitting layer improving the properties of the interface contact, and modifying the interface.
  • the method further includes:
  • Step 14 Forming a second transport layer.
  • the second transport layer may be composed of inorganic nanoparticles having semiconducting properties, and may be prepared by a solution method using materials such as zinc oxide or titanium oxide. Specifically, the nanoparticles are first dissolved to form a nanoparticle solution, and then, by coating. A deposition method such as cloth or printing forms a nano-particle solution layer on the substrate. Finally, the solvent in the solution can be removed by heating/vacuum evaporation, and the nanoparticles are retained to form a second transport layer.
  • the substrate may be provided with a cathode or an anode, or a hole transport layer or an electron transport layer may be disposed, and the thickness of the second transport layer prepared in this step may be less than 100 nm.
  • Step 15 forming a second barrier layer on the second transport layer, the second barrier layer comprising a polymer electrolyte.
  • the second barrier layer is used for blocking leakage of nanoparticles in the quantum dot emitting layer to the second transport layer
  • the step 15 may specifically include:
  • Step 151 Dissolving the polymer electrolyte with a third solvent to form a third solution having a predetermined concentration.
  • the third solvent may be the same as or different from the first solvent, and preferably, the third solvent is a polar solvent for subsequently dissolving the nanoparticles of the quantum dot emitting layer by the non-polar solvent, and further preparing on the second barrier layer.
  • the quantum dot light-emitting layer solvent miscibility of the third solvent and the nano-particles in the dissolved quantum dot light-emitting layer is avoided, and leakage or interlayer miscibility of the quantum dot light-emitting layer and the second barrier layer which are subsequently prepared is reduced.
  • Step 152 depositing the third solution on the second transport layer to form a second barrier layer.
  • the second barrier layer is configured to block at least a portion of the nanoparticles in the quantum dot light-emitting layer from leaking to the second transport layer.
  • the preset concentration is less than 1 mg/ml
  • the specific solution can be prepared by a solution method.
  • the specific solution method is as described above, and the second barrier layer formed by the above method is omitted.
  • the second transmission layer and the quantum dot luminescent layer act as a barrier, while ensuring that the second barrier layer has good electrical conductivity and reduces the hindrance to electron conduction.
  • the above scheme can deposit the dissolved chain polymer electrolyte on the second transport layer, and at the same time, the solvent used in preparing the second transport layer is immiscible with the solvent used for preparing the quantum dot light-emitting layer, thereby avoiding the second transport layer and A phenomenon of mutual dissolution occurs between the subsequently formed quantum dot light-emitting layers to ensure the performance of the prepared quantum dot light-emitting layer.
  • the concentration of the polymer electrolyte in the third solution may be the same as or different from the concentration of the polymer electrolyte in the first solution, and the polymer electrolyte in the third solution may be the same as or different from the polymer electrolyte in the first solution.
  • the QLED device formed by the above steps can form a first barrier layer between the first transport layer and the quantum dot light-emitting layer, the first barrier layer being composed of a plurality of chain polymer electrolytes having a dense network structure.
  • the first barrier layer serves to block leakage of nanoparticles in the first transport layer to the quantum dot light-emitting layer during deposition of the first transport layer.
  • a second barrier layer is formed on the formed second transport layer, the second barrier layer being composed of a plurality of chain polymer electrolytes having a dense network structure.
  • the second barrier layer of the mesh can prevent the nanoparticles in the quantum dot luminescent layer from leaking into the second transport layer by gravity, thereby ensuring quantum dot luminescence Layer performance.
  • the polymer electrolyte is an electrolyte material in the form of a polymer, the end groups thereof can improve the surface defects of the nanoparticles in the first transport layer, the second transport layer, and the quantum dot light-emitting layer in contact therewith, and improve the interface contact. Nature, the role of the above interface modification.
  • the film structure of the QLED device provided by the embodiment of the present application is as shown in FIG. 6 , and mainly includes: a quantum dot light emitting layer 62 , a first transport layer 61 located above the quantum dot light emitting layer 62 , and the quantum dot a first barrier layer 63 between the light emitting layer 62 and the first transport layer 61, the first barrier layer 63 comprising a polymer electrolyte; wherein the first barrier layer 63 is used to block the first transport layer At least a portion of the nanoparticles in 61 leak into the quantum dot luminescent layer 62.
  • the QLED device may comprise the following two structures:
  • the first transport layer is an electron transport layer.
  • the QLED device may include a cathode 71a, an electron transport layer 72a, a quantum dot light-emitting layer 73a, a hole transport layer 74a, and an anode 75a, which is located between the electron transport layer 72a and the quantum dot light-emitting layer 73a.
  • Barrier layer 76a may be included in the QLED device.
  • the first barrier layer 76a between the quantum dot light-emitting layer 73a and the electron transport layer 72a is composed of a plurality of chain polymer electrolytes, and is formed by the polymer electrolyte contained in the first barrier layer 76a.
  • a mesh structure having a density which can block the nanoparticles in the electron transport layer 72a and alleviate the penetration of the nanoparticles into the quantum dot light-emitting layer 73a by gravity, thereby ensuring the light emission of the quantum dot light-emitting layer 73a. performance.
  • the first transport layer is a hole transport layer.
  • the QLED device may include an anode 71b, a hole transport layer 72b, a quantum dot light-emitting layer 73b, an electron transport layer 74b, and a cathode 75b, which are located between the hole transport layer 72b and the quantum dot light-emitting layer 73b.
  • a barrier layer 76b is located between the hole transport layer 72b and the quantum dot light-emitting layer 73b.
  • the first barrier layer 76b between the quantum dot light-emitting layer 73b and the hole transport layer 72b is composed of a plurality of chain polymer electrolytes, and has a mesh structure having a certain density, and the mesh structure can The nanoparticles in the hole transport layer 72b are blocked to block the nanoparticle from being infiltrated into the quantum dot light-emitting layer 73b by gravity, thereby ensuring the light-emitting property of the quantum dot light-emitting layer 73b.
  • the polymer electrolyte may be an amine-containing polyfluorene-conjugated polymer PFN, a phenolic resin PF, a regenerated polyethylene terephthalate PETE, a polyetherimide PEI, a poly-terephthalic plastic PET, or a polynaphthalene.
  • the QLED device of the present application mainly includes: a second transmission layer 84 located below the quantum dot emitting layer 83; and the second transmission layer 84 and the quantum dot emitting layer 83 a second barrier layer 87, the second barrier layer 87 comprising a polymer electrolyte; wherein the second barrier layer 87 is for blocking leakage of particles in the quantum dot light-emitting layer 83 to the second Transport layer 84.
  • the above QLED device can have the following two structures:
  • the first transport layer is an electron transport layer
  • the second transport layer is a hole transport layer
  • the QLED device includes a cathode 91a, an electron transport layer 92a, a quantum dot light-emitting layer 93a, a hole transport layer 94a, and an anode 95a, and a first electrode is disposed between the electron transport layer 92a and the quantum dot light-emitting layer 93a.
  • the barrier layer 96a is a second barrier layer 97a between the hole transport layer 94a and the quantum dot light-emitting layer 93a.
  • the polymer electrolyte has a network structure, that is, the first barrier layer 96a located between the electron transport layer 92a and the quantum dot light-emitting layer 93a has a network structure, and can effectively separate the quantum dot light-emitting layer 93a from the electron
  • the transport layer 92a prevents the nanoparticles in the electron transport layer 92a from leaking into the quantum dot light-emitting layer 93a by gravity, even in the case where the layers are mutually soluble.
  • the second barrier layer 97a between the hole transport layer 94a and the quantum dot light-emitting layer 93a has a dense network structure to prevent the nanoparticles in the quantum dot light-emitting layer 93a from penetrating into the hole transport layer 94a. Further, the light-emitting performance of the quantum dot light-emitting layer 93a is ensured.
  • Structure b the first transport layer is a hole transport layer, and the second transport layer is an electron transport layer.
  • the QLED device includes an anode 91b, a hole transport layer 92b, a quantum dot light-emitting layer 93b, an electron transport layer 94b, and a cathode 95b, and is disposed between the hole transport layer 92b and the quantum dot light-emitting layer 93b.
  • a barrier layer 96b is a second barrier layer 97b between the electron transport layer 94b and the quantum dot light-emitting layer 93b.
  • the polymer electrolyte has a network structure, that is, the first barrier layer 96b located between the hole transport layer 92b and the quantum dot light-emitting layer 93b has a network structure, and can effectively separate the quantum dot light-emitting layer 93b from The hole transport layer 92b prevents the nanoparticles in the hole transport layer 92b from leaking into the quantum dot light-emitting layer 93b by gravity, even in the case where the layers are mutually soluble.
  • the second barrier layer 97b between the electron transport layer 94b and the quantum dot light-emitting layer 93b can effectively space the quantum dot light-emitting layer 93b and the electron transport layer 94b to prevent the nanoparticles in the quantum dot light-emitting layer 93b from being subjected to gravity. Leakage into the electron transport layer 94b, even the case where the layers are mutually soluble. Thereby, the luminescent property of the quantum dot light-emitting layer 93b is ensured.
  • the end groups carried by the polymer electrolyte can fill the contact interface of the quantum dot light-emitting layer and the adjacent transport layer.
  • the nano-scale particles are included in the quantum dot luminescent layer, and the surface of the particle has defects
  • the nanoparticles contained in the transport layer may be inorganic nanoparticles having semiconductor properties, and the surface of the nano-particle also has defects in the QLED.
  • the above defects will capture electrons, hinder electron conduction, and even the phenomenon of interface quenching, affecting the luminous effect of QLED devices.
  • the polymer electrolyte is an electrolyte in the form of a polymer.
  • the polymer electrolyte tends to have a dipole, and is filled on the surface of the nanoparticle contacting the quantum dot emitting layer with the electron transport layer or the hole transport layer.
  • the defects of the contact interface between the quantum dot emitting layer and the transport layer are improved, the density of the defect state is reduced, and the luminescent property of the QLED device is optimized.
  • Embodiments of the present application provide a QLED device including any of the QLED devices mentioned above.
  • the QLED device can be any mobile phone, tablet computer, television, display, notebook computer, digital photo frame, navigator, smart wearable device, virtual reality (VR) device, Augmented Reality (AR) device, etc. Products or parts that display functions can also be applied to lighting equipment.
  • Other indispensable components of the display device are understood by those skilled in the art, and are not described herein, nor should they be construed as limiting the application.

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Abstract

本申请涉及发光器件技术领域，尤其涉及一种量子点发光二极管QLED器件及其制作方法、装置，用以缓解现有技术中在量子点发光层之上形成的第一传输层中纳米粒子渗漏而影响量子点发光层性能的问题。该器件包括：量子点发光层、位于量子点发光层之上的第一传输层、位于量子点发光层与第一传输层之间的第一阻挡层，第一阻挡层包含聚合物电解质，用于阻隔第一传输层中的至少部分纳米粒子渗漏至量子点发光层。由于该第一阻挡层包含较为致密的网状聚合物电解质，从而，第一阻挡层可以阻隔第一传输层中的至少部分纳米粒子渗漏至量子点发光层，避免第一传输层与量子点发光层之间出现粒子互溶的情况，保证量子点发光层的发光性能。

Description

一种量子点发光二极管QLED器件及其制作方法、装置
交互参考
本申请要求以下优先权：2018年1月31日提出的申请号：201810098253.5，名称:“一种量子点发光二极管QLED器件及其制作方法、装置”的中国专利，本申请参考引用了如上所述申请的全部内容。
技术领域
本申请涉及显示技术领域，尤其涉及一种量子点发光二极管QLED器件及其制作方法、装置。
背景技术
量子点发光二极管(Quantum Dot Light Emitting Diodes，QLED)是一种新型的不需要额外光源的自发光技术，量子点(Quantum Dots)是一些肉眼无法看到的、极其微小的半导体纳米粒子，是一种粒径为几纳米到几十纳米的颗粒。
如图1所示，为现有的QLED器件的膜层结构示意图，在该器件膜层中，由上至下依次主要包括：阴极01、电子传输层02、量子点发光层03、空穴传输层04、阳极05等膜层。此外，还可以包括：电子注入层、空穴注入层等，图1并未示出。
由于过渡金属氧化物(如氧化锌，氧化钛等)具有优异的可见光透过性、功函数可调节性，因此，成为QLED器件中电子传输层的优选材料。但由于电子传输层与量子点发光层通常都由具有半导体性质的无机物构成，且电子传输层与量子点发光层往往直接接触，导致现有技术中在量子点发光层上制备过渡金属氧化物电子传输层的过程中，会出现上层的纳米粒子渗漏至下层甚至层间互溶的情况。从而使得量子点发光层出现缺陷，进而影响QLED器件的性能。
发明内容
本申请提供一种量子点发光二极管QLED器件及其制作方法、装置，用以缓解现有技术中在量子点发光层之上形成的第一传输层中纳米粒子渗漏而影响量子点发光层性能的问题。
本申请采用下述技术方案：
一种量子点发光二极管QLED器件，包括：量子点发光层、位于所述量子点发光层之上的第一传输层、位于所述量子点发光层与所述第一传输层之间的第一阻挡层，所述第一阻挡层包含聚合物电解质；
其中，所述第一阻挡层用于阻隔所述第一传输层中的至少部分纳米粒子渗漏至所述量子点发光层。
较优的，该器件还包括：位于所述量子点发光层下方的第二传输层；
位于所述第二传输层与所述量子点发光层之间的第二阻挡层，所述第二阻挡层包含聚合物电解质。
较优的，该器件中，所述聚合物电解质具有网状结构。
较优的，该器件中，所述网状结构由链状聚合物电解质构成。
较优的，该器件中，阻挡层的厚度为8-15nm。
较优的，该器件中，所述聚合物电解质包含胺基聚芴类共轭高分子PFN、酚醛树脂PF、再生聚乙烯对苯二甲酸酯PETE、聚醚酰亚胺PEI、聚对苯二甲酸类塑料PET、聚萘二甲酸乙二醇酯中的任意一种或几种材料。
一种量子点发光二极管QLED器件的制作方法，包括：
形成量子点发光层；在所述量子点发光层之上形成第一阻挡层，所述第一阻挡层包含聚合物电解质；在所述第一阻挡层之上形成第一传输层；
其中，所述第一阻挡层用于阻隔所述第一传输层中的至少部分纳米粒子渗漏至所述量子点发光层。
较优的，该方法中，在量子点发光层上形成第一阻挡层，具体包括：
利用第一溶剂溶解聚合物电解质，形成具有预设浓度的第一溶液；
将所述第一溶液沉积在所述量子点发光层之上，形成第一阻挡层。
较优的，该方法中，在形成所述第一传输层时所用的溶解纳米粒子的 第二溶剂与所述第一溶剂不互溶。
较优的，所述第一溶剂为极性溶剂，所述第二溶剂为非极性溶剂。
较优的，上述任一种量子点发光二极管QLED器件的制作方法中，在形成量子点发光层之前，所述方法还包括：
形成第二传输层；在所述第二传输层之上形成第二阻挡层，所述第二阻挡层包含聚合物电解质。
较优的，上述方法中，在所述第二传输层上形成第二阻挡层，具体包括：
利用第三溶剂溶解聚合物电解质，形成具有预设浓度的第三溶液；
将所述第三溶液沉积在所述第二传输层上，形成第二阻挡层。
较优的，上述方法中，所述预设浓度小于1mg/ml。
一种量子点发光二极管QLED装置，包括上述任意一种量子点发光二极管QLED器件。
本申请采用的上述至少一个技术方案能够达到以下有益效果：
通过以上技术方案，本申请在量子点发光二极管QLED器件的量子点发光层上形成第一阻挡层，在第一阻挡层上形成第一传输层，该阻挡层中包含多条链状的聚合物电解质，形成致密的网状结构，阻隔上述传输层中的纳米粒子，避免该纳米粒子受重力作用渗透至量子点发光层中，从而保证量子点发光层的发光性能。另外，由于聚合物电解质所携带的端基可以修饰量子点发光层与相邻传输层的接触界面的纳米粒子表面缺陷，修饰相接触的纳米粒子，从而改善界面缺陷，因此，该阻挡层能提升量子点发光二极管QLED器件性能。
附图说明
此处所说明的附图用来提供对本申请的进一步理解，构成本申请的一部分，本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。在附图中：
图1为现有技术中量子点发光二极管QLED膜层结构示意图；
图2为本申请提供的QLED器件的制作方法流程图之一；
图3为本申请提供的QLED器件的制作方法流程图之二；
图4为本申请提供的QLED器件的制作方法流程图之三；
图5为本申请中在第二传输层上形成第二阻挡层的方法流程图；
图6为本申请提供的QLED器件膜层结构示意图之一；
图7a为本申请提供的QLED器件膜层结构示意图之二；
图7b为本申请提供的QLED器件膜层结构示意图之三；
图8为本申请提供的QLED器件膜层结构示意图之四；
图9a为本申请提供的QLED器件膜层结构示意图之五；
图9b为本申请提供的QLED器件膜层结构示意图之六。
具体实施方式
为使本申请的目的、技术方案和优点更加清楚，下面将结合本申请具体实施例及相应的附图对本申请技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
以下结合附图，详细说明本申请各实施例提供的技术方案。需要说明的是，本申请提供的膜层结构示意图仅示出不同膜层之间的位置关系，并不代表实际的膜层厚度。
实施例一
本申请实施例提供一种制作QLED器件的方法，如图2所示，该方法主要包括以下步骤：
步骤11：形成量子点发光层。
在具体的生产过程中，可以采用溶液法制备该量子点发光层。该量子点发光层可以制作在基板上，在制作量子点发光层之前，该方法还可以包括在基板上依次制作阳极、空穴传输层等步骤。
步骤12：在所述量子点发光层之上形成第一阻挡层，所述第一阻挡层包含聚合物电解质。
其中，所述第一阻挡层用于阻隔所述第一传输层中的至少部分纳米粒子渗漏至所述量子点发光层。聚合物电解质是聚合物形式的电解质材料，往往为带有偶极的聚合物，具体可以是离子导电聚合物或离子交换膜。该聚合物电解质可以是含胺基聚芴类共轭高分子PFN、酚醛树脂PF、再生聚乙烯对苯二甲酸酯PETE、聚醚酰亚胺PEI、聚对苯二甲酸类塑料PET、聚萘二甲酸乙二醇酯PEN等材料。在量子点发光层上形成的第一阻挡层为网状结构。聚合物电解质一般为链状，多条不同长度、不同形态的链状聚合物分子缠绕在一起，形成具有较为致密网状结构的第一阻挡层。
另外，需要说明的是，上述第一阻挡层中可以不只包含上述聚合物电解质，还可以包含其他能够形成类似阻挡结构或是有助于形成致密网状结构的有机或无机材料，以便加强第一阻挡层的致密程度或是阻挡能力。
步骤13：在所述第一阻挡层上形成第一传输层。
具体地，可采用沉积工艺在形成的第一阻挡层上，沉积一定厚度的第一传输层，该第一传输层的材料为具有半导体性质的无机物纳米粒子。首先溶解上述纳米粒子形成纳米粒子溶液，然后通过涂布或印刷等沉积方式在第一阻挡层上形成纳米粒子溶液的膜层，最后可以通过加热/真空蒸发的方式去除溶液中的溶剂，在第一阻挡层上留下纳米粒子形成第一传输层。较优的，上述纳米粒子可以为氧化锌、氧化钛等过渡金属氧化物材料。
通过上述步骤形成的QLED器件中，所述第一阻挡层用于阻隔第一传输层中的纳米粒子渗漏至所述量子点发光层。且该第一阻挡层位于所述量子点发光层上，第一传输层位于第一阻挡层上，形成第一阻挡层夹设于量子点发光层与第一传输层之间的结构，该第一阻挡层由多条链状聚合物电解质构成，具有致密的网状结构，有效分隔第一传输层与量子点发光层，能够对大部分纳米粒子起阻隔作用，缓解纳米粒子受重力作用渗漏至量子点发光层中的情况，甚至阻隔全部纳米粒子，避免该纳米粒子由于重力的作用落入量子点发光层中。由此，第一阻挡层能够缓解现有技术中在量子点发光层之上形成的第一传输层中纳米粒子渗漏而影响量子点发光层性能的问题。
其实，需要说明的是，本申请中所涉及的第一传输层可以为电子传输 层，也可以为空穴传输层，只要满足该第一传输层制作在量子点发光层的膜层之上即可。这样，才会存在由于重力作用而导致的位于上层的第一传输层的纳米粒子渗漏至量子点发光层的问题。而本申请通过在量子点发光层与第一传输层之间制作了第一阻挡层，通过该第一阻挡层中包含的聚合物电解质，形成具有一定致密度的网状结构，从而，阻隔第一传输层中的纳米粒子渗漏至量子点发光层，避免制作过程中第一传输层与量子点发光层之间产生膜层互溶。
实施例二
基于上述方案，本申请实施例提供的QLED器件的制作方法，参见图3所示，具体包括：
步骤11：形成量子点发光层。
具体的，形成量子点发光层的方法步骤可以如上述实施例所示，此处不再赘述。而步骤12中形成第一阻挡层的过程具体可通过以下步骤121以及步骤122实现。
步骤121：利用第一溶剂溶解聚合物电解质，形成具有预设浓度的第一溶液。
本步骤中，确定用于溶解聚合物电解质的第一溶剂；考虑到该第一阻挡层需要制作在量子点发光层之上，为了避免相邻膜层之间的溶剂互溶，需要在相邻膜层的制作时，选用相互正交(即互不相溶)的溶剂对溶质(各类纳米粒子)进行溶解处理。由于溶解量子点发光层中纳米粒子的溶剂一般是非极性溶剂，那么，需要选用极性溶剂来溶解聚合物电解质。
优选地，可以选用极性溶剂--醇溶液，该醇溶液对聚合物电解质具有较好的溶解性，而且与非极性溶剂互为正交溶剂，可避免与量子点膜层之间的互溶现象。
步骤122：将所述第一溶液沉积在所述量子点发光层之上，形成第一阻挡层。
其中，所述第一阻挡层用于阻隔所述第一传输层中的至少部分纳米粒子渗漏至所述量子点发光层。在本步骤中，沉积工艺具体包括涂布、浸涂、 喷雾、印刷、旋涂等工艺方式，通过上述沉积工艺将溶液均匀沉积在量子点发光层上，最后可以采用加热/真空法蒸发溶剂，形成所需膜层，其工艺相对简单且成膜质量较高。
可选地，在本申请中，考虑到聚合物电解质的导电性能往往比纳米粒子的导电性能差，为保证上述传输层的导电性能，上述预设浓度应小于1mg/ml。当第一阻挡层过厚时，会阻碍电子传导，降低导电性能，具有一定绝缘作用，影响QLED器件整体性能；当第一阻挡层过薄时，网状结构不够致密，不能有效阻挡纳米粒子渗漏至量子传输层中。因此，为了保证链状的聚合物电解质能够形成一定致密度的网状结构，制备时，需要控制第一阻挡层的厚度大于或等于8纳米且小于或等于15纳米，这样，才能形成具有阻隔功能的第一阻挡层，同时，还可以保证形成的第一阻挡层具有良好的导电性，减小对电子传输的阻碍。
同时，还包括步骤13：在所述第一阻挡层上形成第一传输层。具体步骤如上述实施例所述，此处不再赘述。
本申请实施例在此示出了前述步骤12的一种具体实现方式。当然，应理解，步骤12也可以采用其它的方式实现，本申请实施例对此不作限制。
可选地，在形成第一阻挡层时，采用的第一溶剂与制作量子点发光层时所用的溶剂互不相溶，进一步，为了避免第一阻挡层与位于其上的第一传输层之间发生溶剂互溶，可限定在形成所述第一传输层时所用的溶解纳米粒子的第二溶剂与所述第一溶剂不互溶。
通过上述步骤形成的QLED器件，能够在第一传输层与量子点发光层之间形成第一阻挡层，该第一阻挡层由多条链状聚合物电解质构成，具有致密的网状结构。在沉积第一传输层的过程中，该第一阻挡层用于阻隔第一传输层中的纳米粒子渗漏至所述量子点发光层。另外，由于聚合物电解质是聚合物形式的电解质材料，至少部分聚电解质具有由所在层表面向外延伸的端基，其端基能够一定程度上改善与其接触的第一传输层、第二传输层以及量子点发光层中纳米粒子的表面缺陷，改善界面接触的性质，对上述界面起到修饰的作用。
基于上述方案，需要说明的是，如背景技术中所指，针对无机纳米粒子，才会发生纳米粒子渗漏的情况。而考虑到量子点发光层中的纳米粒子也可能会渗漏至下方的传输层中，影响膜层性能。参见图4所示，为此，在形成量子点发光层之前，所述方法还包括：
步骤14：形成第二传输层。
具体的，第二传输层可以由具有半导体性质的无机物纳米粒子构成，可以选用氧化锌或氧化钛等材料通过溶液法进行制备，具体的，首先溶解纳米粒子形成纳米粒子溶液，然后，通过涂布或印刷等沉积方式在基板上形成纳米粒子溶液层，最后可以通过加热/真空蒸发的方式去除溶液中的溶剂，保留纳米粒子形成第二传输层。其中，基板上可以设置有阴极或阳极，也可以设置有空穴传输层或电子传输层，本步骤制备的第二传输层的厚度可以小于100nm。
步骤15：在所述第二传输层上形成第二阻挡层，所述第二阻挡层包含聚合物电解质。
其中，所述第二阻挡层用于阻隔所述量子点发光层中的纳米粒子渗漏至所述第二传输层
可选地，参见图5所示，该步骤15可具体包括：
步骤151：利用第三溶剂溶解聚合物电解质，形成具有预设浓度的第三溶液。
其中，第三溶剂可以与第一溶剂相同或不同，较优的，第三溶剂采用极性溶剂，以便随后通过非极性溶剂溶解量子点发光层的纳米粒子，在第二阻挡层上进一步制备量子点发光层时避免第三溶剂与溶解量子点发光层中纳米粒子的溶剂互溶，减少随后制备的量子点发光层与第二阻挡层出现渗漏或层间互溶的现象。
步骤152：将所述第三溶液沉积在所述第二传输层上，形成第二阻挡层。
其中，所述第二阻挡层用于阻隔所述量子点发光层中的至少部分纳米粒子渗漏至所述第二传输层。较优的，该预设浓度小于1mg/ml，具体的可以通过溶液法制备，具体的溶液法制备方法步骤如前文所述，此处不再 赘述，通过上述方法形成的第二阻挡层在第二传输层与量子点发光层之间起阻隔作用，同时保证该第二阻挡层具有良好的导电性，减小对电子传导的阻碍作用。
上述方案能够将经过溶解的链状聚合物电解质沉积在第二传输层上，同时，由于制备第二传输层使用的溶剂与制备量子点发光层使用的溶剂不互溶，从而避免第二传输层与随后形成的量子点发光层之间出现互溶的现象，保证制备的量子点发光层的性能。
另外，第三溶液中聚合物电解质的浓度可以与第一溶液中聚合物电解质的浓度相同或不同，第三溶液中的聚合物电解质可以与第一溶液中聚合物电解质相同或不同。
需要说明的是，本申请中步骤的序号并不代表步骤执行的先后顺序，而是以说明书解释以及说明书附图中的示例为准。
通过上述步骤形成的QLED器件，能够在第一传输层与量子点发光层之间形成第一阻挡层，该第一阻挡层由多条链状聚合物电解质构成，具有致密的网状结构。在沉积第一传输层的过程中，该第一阻挡层用于阻隔第一传输层中的纳米粒子渗漏至所述量子点发光层。相类似的，在形成的第二传输层上制作第二阻挡层，该第二阻挡层由多条链状聚合物电解质构成，具有致密的网状结构。在该第二阻挡层上制作量子点发光层的过程中，网状的第二阻挡层能避免量子点发光层中的纳米粒子受重力作用渗漏至第二传输层中，从而保证量子点发光层的性能。另外，由于聚合物电解质是聚合物形式的电解质材料，其端基能够一定程度上改善与其接触的第一传输层、第二传输层以及量子点发光层中纳米粒子的表面缺陷，改善界面接触的性质，对上述界面起到修饰的作用。
实施例三
本申请实施例提供的QLED器件的膜层结构如图6所示，主要包括：量子点发光层62、位于所述量子点发光层62之上的第一传输层61，以及位于所述量子点发光层62与所述第一传输层61之间的第一阻挡层63，所述第一阻挡层63包含聚合物电解质；其中，所述第一阻挡层63用于阻 隔所述第一传输层61中的至少部分纳米粒子渗漏至所述量子点发光层62。
考虑到在本申请中，第一传输层可以为电子传输层，也可以为空穴传输层，那么，当仅存在第一阻挡层时，该QLED器件可包含以下两种结构：
结构1：第一传输层为电子传输层。
如图7a所示，该QLED器件可以包括阴极71a，电子传输层72a、量子点发光层73a、空穴传输层74a，阳极75a，位于电子传输层72a与量子点发光层73a之间的第一阻挡层76a。
对于上述QLED器件，位于量子点发光层73a与电子传输层72a之间的第一阻挡层76a由多个链状聚合物电解质组成，通过该第一阻挡层76a中包含的聚合物电解质，形成具有一定致密度的网状结构，该网状结构能阻隔电子传输层72a中的纳米粒子，缓解该纳米粒子受重力作用渗透至量子点发光层73a中的情况，从而保证量子点发光层73a的发光性能。
结构2：第一传输层为空穴传输层。
如图7b所示，该QLED器件可以包括阳极71b，空穴传输层72b，量子点发光层73b、电子传输层74b、阴极75b，位于空穴传输层72b与量子点发光层73b之间的第一阻挡层76b。
对于上述QLED器件，位于量子点发光层73b与空穴传输层72b之间的第一阻挡层76b由多个链状聚合物电解质组成，为具有一定致密度的网状结构，该网状结构能阻隔空穴传输层72b中的纳米粒子，阻隔该纳米粒子受重力作用渗透至量子点发光层73b中，从而保证量子点发光层73b的发光性能。聚合物电解质可以是含胺基聚芴类共轭高分子PFN、酚醛树脂PF、再生聚乙烯对苯二甲酸酯PETE、聚醚酰亚胺PEI、聚对苯二甲酸类塑料PET、聚萘二甲酸乙二醇酯PEN等材料。
基于上述方案，参照图8所示，本申请中QLED器件主要包括：位于所述量子点发光层83下方的第二传输层84；位于所述第二传输层84与所述量子点发光层83之间的第二阻挡层87，所述第二阻挡层87包含聚合物电解质；其中，所述第二阻挡层87用于阻隔所述量子点发光层83中的粒子渗漏至所述第二传输层84。
上述QLED器件可以有以下两种结构：
结构a：第一传输层为电子传输层，第二传输层为空穴传输层。
如图9a所示，该QLED器件包括阴极91a、电子传输层92a、量子点发光层93a、空穴传输层94a、阳极95a，在电子传输层92a与量子点发光层93a之间设置有第一阻挡层96a，位于空穴传输层94a与量子点发光层93a之间的第二阻挡层97a。
对于上述QLED结构，所述聚合物电解质具有网状结构，即位于电子传输层92a与量子点发光层93a之间的第一阻挡层96a具有网状结构，能够有效间隔量子点发光层93a与电子传输层92a，避免电子传输层92a中的纳米粒子受重力作用渗漏至量子点发光层93a中，甚至出现层间互溶的情况。相类似的，位于空穴传输层94a与量子点发光层93a之间的第二阻挡层97a具有致密的网状结构，避免量子点发光层93a中的纳米粒子渗透至空穴传输层94a中。进而保证量子点发光层93a的发光性能。
结构b：第一传输层为空穴传输层，第二传输层为电子传输层。
如图9b所示，该QLED器件包括阳极91b、空穴传输层92b、量子点发光层93b、电子传输层94b、阴极95b，在空穴传输层92b与量子点发光层93b之间设置有第一阻挡层96b，位于电子传输层94b与量子点发光层93b之间的第二阻挡层97b。
对于上述QLED结构，所述聚合物电解质具有网状结构，即位于空穴传输层92b与量子点发光层93b之间的第一阻挡层96b具有网状结构，能够有效间隔量子点发光层93b与空穴传输层92b，避免空穴传输层92b中的纳米粒子受重力作用渗漏至量子点发光层93b中，甚至出现层间互溶的情况。相类似的，位于电子传输层94b与量子点发光层93b之间的第二阻挡层97b能够有效间隔量子点发光层93b与电子传输层94b，避免量子点发光层93b中的纳米粒子受重力作用渗漏至电子传输层94b中，甚至出现层间互溶的情况。从而保证量子点发光层93b的发光性能。
基于上述器件结构，所述聚合物电解质所携带的端基能够填充在所述量子点发光层与相邻传输层的接触界面。具体的，在量子点发光层中包含纳米级的粒子，该粒子表面存在缺陷，在传输层中包含的纳米粒子可以为 具有半导体性质的无机物纳米粒子，该纳米粒子表面也存在缺陷，在QLED器件工作时，上述缺陷会捕获电子，阻碍电子传导，甚至出现界面淬灭的现象，影响QLED器件发光效果。本方案中聚合物电解质为聚合物形式的电解质，在QLED器件工作时，该聚合物电解质往往带有偶极，填充在量子点发光层与电子传输层或空穴传输层接触的纳米粒子表面，改善量子点发光层与传输层接触界面的缺陷，降低缺陷态密度，优化QLED器件发光性能。
实施例四
本申请实施例提供一种QLED装置，包括上述提及的任一QLED器件。该QLED装置可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪、智能穿戴设备、虚拟现实(Virtual Reality，VR)设备、增强现实(Augmented Reality，AR)设备等任何具有显示功能的产品或部件，也可以应用于照明设备。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本申请的限制。
以上仅为本申请的实施例而已，并不用于限制本申请。对于本领域技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。

Claims (14)

  1. 一种量子点发光二极管QLED器件，其特征在于，包括：量子点发光层、位于所述量子点发光层之上的第一传输层、位于所述量子点发光层与所述第一传输层之间的第一阻挡层，所述第一阻挡层包含聚合物电解质；
    其中，所述第一阻挡层用于阻隔所述第一传输层中的至少部分纳米粒子渗漏至所述量子点发光层。
  2. 如权利要求1所述的量子点发光二极管QLED器件，其中，还包括：位于所述量子点发光层下方的第二传输层；
    位于所述第二传输层与所述量子点发光层之间的第二阻挡层，所述第二阻挡层包含聚合物电解质。
  3. 如权利要求1或2所述的量子点发光二极管QLED器件，其中，所述聚合物电解质具有网状结构。
  4. 如权利要求3所述的量子点发光二极管QLED器件，其中，所述网状结构由链状聚合物电解质构成。
  5. 如权利要求1或2所述的量子点发光二极管QLED器件，其中，阻挡层的厚度为8-15nm。
  6. 如权利要求1或2所述的量子点发光二极管QLED器件，其中，所述聚合物电解质包含胺基聚芴类共轭高分子PFN、酚醛树脂PF、再生聚乙烯对苯二甲酸酯PETE、聚醚酰亚胺PEI、聚对苯二甲酸类塑料PET、聚萘二甲酸乙二醇酯中的任意一种或几种材料。
  7. 一种量子点发光二极管QLED器件的制作方法，其特征在于，包括：
    形成量子点发光层；在所述量子点发光层之上形成第一阻挡层，所述第一阻挡层包含聚合物电解质；在所述第一阻挡层之上形成第一传输层；
    其中，所述第一阻挡层用于阻隔所述第一传输层中的至少部分纳米粒子渗漏至所述量子点发光层。
  8. 如权利要求7所述的量子点发光二极管QLED器件的制作方法，其中，在量子点发光层上形成第一阻挡层，具体包括：
    利用第一溶剂溶解聚合物电解质，形成具有预设浓度的第一溶液；
    将所述第一溶液沉积在所述量子点发光层之上，形成第一阻挡层。
  9. 如权利要求8所述的量子点发光二极管QLED器件的制作方法，其中，在形成所述第一传输层时所用的溶解纳米粒子的第二溶剂与所述第一溶剂不互溶。
  10. 如权利要求9所述的量子点发光二极管QLED器件的制作方法，其中，所述第一溶剂为极性溶剂，所述第二溶剂为非极性溶剂。
  11. 如权利要求7-10任一项所述的量子点发光二极管QLED器件的制作方法，其中，在形成量子点发光层之前，所述方法还包括：
    形成第二传输层；在所述第二传输层之上形成第二阻挡层，所述第二阻挡层包含聚合物电解质。
  12. 如权利要求11所述的量子点发光二极管QLED器件的制作方法，其中，在所述第二传输层上形成第二阻挡层，具体包括：
    利用第三溶剂溶解聚合物电解质，形成具有预设浓度的第三溶液；
    将所述第三溶液沉积在所述第二传输层上，形成第二阻挡层。
  13. 如权利要求8-10任一项所述的量子点发光二极管QLED器件的制作方法，其中，所述预设浓度小于1mg/ml。
  14. 一种量子点发光二极管QLED装置，其特征在于，包括如权利要求1-6任意一项所述的量子点发光二极管QLED器件。
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