WO2019143121A1 - Composition pour masque dur - Google Patents

Composition pour masque dur Download PDF

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Publication number
WO2019143121A1
WO2019143121A1 PCT/KR2019/000637 KR2019000637W WO2019143121A1 WO 2019143121 A1 WO2019143121 A1 WO 2019143121A1 KR 2019000637 W KR2019000637 W KR 2019000637W WO 2019143121 A1 WO2019143121 A1 WO 2019143121A1
Authority
WO
WIPO (PCT)
Prior art keywords
formula
hard mask
carbon atoms
group
composition
Prior art date
Application number
PCT/KR2019/000637
Other languages
English (en)
Korean (ko)
Inventor
최한영
양돈식
이은상
Original Assignee
동우화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우화인켐 주식회사 filed Critical 동우화인켐 주식회사
Publication of WO2019143121A1 publication Critical patent/WO2019143121A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/12—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an ether radical
    • C08F216/14—Monomers containing only one unsaturated aliphatic radical
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Definitions

  • composition for a hard mask as in 1 above wherein said polymer comprises an aromatic compound having 6 to 35 carbon atoms and a polymer of the following formula:
  • composition for hard mask according to 1 above further comprising at least one of a crosslinking agent, a catalyst or a surfactant.
  • the polymer may be prepared using only an aromatic compound having 6 to 35 carbon atoms and the compound of Formula 2, and other aromatic compounds or linker compounds may not be used in the production of the polymer. Therefore, it is possible to prevent deterioration of etching resistance, solubility, and flatness due to addition of other compounds, and to secure desired physical properties.
  • the polydispersity index (PDI) (weight average molecular weight (Mw) / number average molecular weight (Mn)) of the polymer can be from about 1.5 to 6.0, preferably from about 1.5 to 3.0 . Within this range, film formation properties such as favorable solubility, etch resistance, coating property and flatness can be improved together.
  • a hard mask can be formed by forming a film to be etched on a substrate, and coating and hardening the above-mentioned hard mask composition on the film to be etched.
  • the curing may be performed by a heat-baking process, and it may be desirable to bake in the range of 400 to 450 degrees as described above.
  • a predetermined target pattern can be formed by selectively removing the etching target film using the photoresist pattern and the hard mask pattern together as an etching mask.
  • compositions of Examples and Comparative Examples were coated on a SiO 2 wafer substrate having a trench width of 10 ⁇ m and a depth of 0.50 ⁇ m and dried to form a hard mask film.
  • the thickness difference between the trench portion and the non-trench portion was measured by a scanning electron microscope (SEM) to evaluate flatness.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)

Abstract

La présente invention concerne une composition, pour un masque dur, comprenant un solvant et un polymère représenté par une formule chimique particulière. Un masque dur ayant une résistance à la gravure, une solubilité et un lissé améliorés peut être formé à partir de la composition pour un masque dur.
PCT/KR2019/000637 2018-01-17 2019-01-16 Composition pour masque dur WO2019143121A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0005925 2018-01-17
KR1020180005925A KR102349952B1 (ko) 2018-01-17 2018-01-17 하드마스크용 조성물

Publications (1)

Publication Number Publication Date
WO2019143121A1 true WO2019143121A1 (fr) 2019-07-25

Family

ID=67302257

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2019/000637 WO2019143121A1 (fr) 2018-01-17 2019-01-16 Composition pour masque dur

Country Status (2)

Country Link
KR (1) KR102349952B1 (fr)
WO (1) WO2019143121A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102148772B1 (ko) * 2020-04-09 2020-08-27 로움하이텍 주식회사 신규한 중합체, 이를 포함하는 하층막 형성용 조성물 및 이를 이용한 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110001215A (ko) * 2009-06-29 2011-01-06 제일모직주식회사 레지스트 하층막용 방향족 고리 함유 중합체, 이 중합체의 제조 방법, 이 중합체를 포함하는 레지스트 하층막 조성물, 및 이를 이용하는 소자의 패턴 형성 방법
KR20150069557A (ko) * 2013-12-12 2015-06-23 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 하부층용 방향족 수지
KR20150136106A (ko) * 2013-03-29 2015-12-04 도오꾜오까고오교 가부시끼가이샤 비닐에테르 화합물에서 유래하는 구조 단위를 포함하는 화합물
KR20170062395A (ko) * 2015-11-27 2017-06-07 신에쓰 가가꾸 고교 가부시끼가이샤 규소 함유 축합물, 규소 함유 레지스트 하층막 형성용 조성물 및 패턴 형성 방법
KR20170118273A (ko) * 2016-04-14 2017-10-25 한국화학연구원 신규 가교제 화합물, 이를 포함하는 감광성 폴리이미드 조성물 및 이의 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101802713A (zh) 2007-10-01 2010-08-11 日产化学工业株式会社 形成抗蚀剂下层膜的组合物、使用该组合物的半导体装置的制造方法以及形成抗蚀剂下层膜的组合物用添加剂
KR101156488B1 (ko) * 2008-12-22 2012-06-18 제일모직주식회사 하드마스크 층 형성용 조성물 및 이를 사용한 패턴화된 재료 형상의 제조방법
KR101719146B1 (ko) * 2010-04-09 2017-03-24 한국생산기술연구원 하드마스크용 화합물 및 이를 포함하는 하드마스크 조성물
KR101230529B1 (ko) * 2010-12-23 2013-02-06 한국생산기술연구원 하드마스크용 조성물 및 이를 이용한 반도체 소자의 패턴 형성 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110001215A (ko) * 2009-06-29 2011-01-06 제일모직주식회사 레지스트 하층막용 방향족 고리 함유 중합체, 이 중합체의 제조 방법, 이 중합체를 포함하는 레지스트 하층막 조성물, 및 이를 이용하는 소자의 패턴 형성 방법
KR20150136106A (ko) * 2013-03-29 2015-12-04 도오꾜오까고오교 가부시끼가이샤 비닐에테르 화합물에서 유래하는 구조 단위를 포함하는 화합물
KR20150069557A (ko) * 2013-12-12 2015-06-23 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 하부층용 방향족 수지
KR20170062395A (ko) * 2015-11-27 2017-06-07 신에쓰 가가꾸 고교 가부시끼가이샤 규소 함유 축합물, 규소 함유 레지스트 하층막 형성용 조성물 및 패턴 형성 방법
KR20170118273A (ko) * 2016-04-14 2017-10-25 한국화학연구원 신규 가교제 화합물, 이를 포함하는 감광성 폴리이미드 조성물 및 이의 제조방법

Also Published As

Publication number Publication date
KR20190087749A (ko) 2019-07-25
KR102349952B1 (ko) 2022-01-10

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