WO2019093757A1 - Composition pour masque dur - Google Patents

Composition pour masque dur Download PDF

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Publication number
WO2019093757A1
WO2019093757A1 PCT/KR2018/013466 KR2018013466W WO2019093757A1 WO 2019093757 A1 WO2019093757 A1 WO 2019093757A1 KR 2018013466 W KR2018013466 W KR 2018013466W WO 2019093757 A1 WO2019093757 A1 WO 2019093757A1
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WO
WIPO (PCT)
Prior art keywords
formula
hard mask
group
composition
polymer
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PCT/KR2018/013466
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English (en)
Korean (ko)
Inventor
최상준
이은상
양돈식
최한영
Original Assignee
동우화인켐 주식회사
최상준
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Publication of WO2019093757A1 publication Critical patent/WO2019093757A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents

Definitions

  • the present invention relates to a composition for a hard mask. More particularly, the present invention relates to a composition for a hard mask comprising an aromatic unit.
  • a photoresist is applied on a film to be etched to form a photoresist layer, and a photoresist pattern is formed through exposure and development. Then, a predetermined pattern can be formed by partially removing the film to be etched by using the photoresist pattern as an etching mask. After the image transfer to the etch target film is performed, the photoresist pattern may be removed through an ashing and / or strip process.
  • An anti-reflection coating (ARC) layer may be formed between the etch target film and the photoresist layer to suppress the resolution degradation due to light reflection during the exposure process.
  • the etching for the ARC layer is added, so that the consumption amount or the etching amount of the photoresist layer or the photoresist pattern can be increased.
  • the thickness of the etching target film increases or the etching amount required for forming a desired pattern increases, sufficient etching resistance of the photoresist layer or the photoresist pattern may not be ensured.
  • a resist undercoat may be added between the etch target film and the photoresist layer to ensure etch resistance and etch selectivity of the photoresist for desired pattern formation.
  • the resist under film needs to have sufficient resistance to etching (or etching resistance) and heat resistance, for example, for a high-temperature etching process, and also to be formed to have a uniform thickness by, for example, a spin-on coating process .
  • Korean Patent Laid-Open No. 10-2010-0082844 discloses an example of a composition for forming a resist lower film.
  • An object of the present invention is to provide a composition for a hard mask capable of forming a hard mask having excellent solubility and resistance to etching.
  • Ar 1 is an arylene group having 10 to 40 carbon atoms and Ar 2 is an arylene group having 6 to 40 carbon atoms.
  • Ar 1 in the formula (1) represents the first aromatic unit and is derived from at least one selected from the group consisting of compounds represented by the following formulas (2-1) to Composition:
  • X is -OH, -OR 1 or -NR 2 R 3 , and R 1 , R 2 and R 3 are each independently a hydrogen atom or an alkyl group having 1 to 20 carbon atoms)
  • Ar 3 And Ar 4 are independently of each other a phenylene group or a naphthylene group, and n 1 and n 2 are independently of each other an integer of 1 or 2)
  • Y is a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, an alkynyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 25 carbon atoms).
  • composition of claim 1 further comprising at least one of a crosslinking agent, a catalyst or a surfactant.
  • composition for a hard mask according to the embodiments of the present invention, it is possible to form a hard mask having excellent solubility in solvents and improved etchability together.
  • composition for a hard mask according to embodiments of the present invention may comprise a polymer prepared using a cyano group-containing aromatic compound as a linker.
  • a cyano group-containing aromatic compound as a linker.
  • the solubility in an organic solvent such as propylene glycol monomethyl ether acetate (PGMEA) can be remarkably improved.
  • a hard mask having a desired scale and shape with improved mechanical reliability can be formed from the composition for a hard mask.
  • a high-resolution photolithography process can be realized using the hard mask, and a target pattern having a desired fine line width can be formed.
  • Examples of the present invention include a polymer comprising a first aromatic unit and a cyano group-containing second aromatic unit, thereby providing a composition for a hard mask having improved solubility and etchability.
  • the composition for a hard mask may form a hard mask film which is applied, for example, between a photoresist layer and a film to be etched to be utilized as a resist under film.
  • the hard mask film may be partially removed through a photoresist pattern to form a hard mask, and the hard mask may be used as an additional etching mask.
  • the hard mask film or the hard mask may be utilized, for example, as a spin-on hard mask (SOH).
  • SOH spin-on hard mask
  • the composition for a hard mask according to embodiments of the present invention will be described in detail.
  • the compound or the resin represented by the formula means a representative formula including the isomer thereof.
  • composition for a hard mask according to embodiments of the present invention includes a polymer and a solvent, and may further include an additional agent such as a cross-linking agent, a catalyst, and the like.
  • the composition for a hard mask includes a polymer in which a second aromatic unit containing a first aromatic unit and a cyano group are repeatedly polymerized together.
  • the first aromatic unit may comprise a plurality of aryl rings.
  • the polymer may comprise a repeating unit represented by the following formula (1).
  • Ar 1 is an arylene group having 10 to 40 carbon atoms
  • Ar 2 is an arylene group having 6 to 40 carbon atoms.
  • arylene group may mean a divalent group derived from the aromatic unit or aromatic compound described above.
  • Ar 1 represents the first aromatic unit, and may be provided as a backbone unit or a basic unit which imparts etchability to the polymer or hard mask.
  • Ar 1 or said first aromatic unit may be derived from a high carbon content compound comprising a plurality of aryl rings.
  • carbon content may refer to the ratio of carbon mass to total mass per molecule of a compound.
  • Ar 1 or the first aromatic unit may be derived from at least one of the compounds represented by the following formulas (2-1) to (2-4).
  • X is -OH, -OR 1, or -NR 2 R 3 , and R 1 , R 2, and R 3 may independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms.
  • Ar 3 and Ar 4 independently represent a phenylene group or a naphthylene group, and n 1 and n 2 are independently integers of 1 or 2.
  • Y may represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, an alkynyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 25 carbon atoms.
  • the first aromatic unit may include a fluorene compound-derived unit represented by Formula 2-3.
  • a fluorene basic unit Ar 3 And Ar 4 are included, the etching resistance of the hard mask can be further improved.
  • the first aromatic unit may be derived from at least one of the compounds represented by the following formulas 2-3-1 to 2-3-3.
  • the backbone of the polymer may be formed through two biphenol groups.
  • the linearity of the polymer is improved and the flexibility of the polymer through the rotatable structure of biphenyl can be improved. Therefore, film-forming properties such as flatness can be enhanced along with improvement in the etching resistance of the polymer.
  • pyrene is an example of the compound of the formula (2-2).
  • the solubility is complemented by a cyano group-containing second aromatic unit to be described later, and a hard mask having excellent etching resistance can be realized without unduly lowering the film formation characteristics.
  • -Ar 2 -CN may represent the cyano group-containing second aromatic unit.
  • the cyano group-containing second aromatic unit is included as a linker or a pendant unit of the polymer and can be provided as a unit for enhancing the solubility of the polymer.
  • the cyano group-containing second aromatic unit may be derived from at least one of the compounds represented by the following formulas (3-1) or (3-2).
  • the cyano group may be bonded to the aldehyde group at the para position. In this case, the possibility of exposure of the cyano group is increased, the steric hindrance is decreased, and the solubility enhancement effect through the cyano group can be further enhanced.
  • the polymer may comprise a first aromatic unit substantially as described above and a second aromatic unit containing a cyano group.
  • first aromatic unit substantially as described above
  • second aromatic unit containing a cyano group
  • linkers or linkages in the main chain unit may be included within a range that does not impair the effect of the combination of the first aromatic unit and the second aromatic unit, It is not.
  • the first aromatic unit and the second aromatic unit may be alternately repeated alternately to extend the length of the polymer.
  • the formula (1) indicates that the first aromatic unit and the second aromatic unit are included together, and does not necessarily define the bonding order and position.
  • the polydispersity index (PDI) [weight average molecular weight (Mw) / number average molecular weight (Mn)] of the polymer containing the repeating unit represented by Formula 1 is about 1.5 to 6.0 And preferably about 1.5 to 3.0. Within this range, film formation properties such as favorable solubility, etch resistance, coating property and flatness can be improved together.
  • the content of the polymer is not particularly limited, but may be, for example, about 5 to 60% by weight of the total weight of the composition for a hard mask, and in one embodiment about 10 to 50% by weight.
  • the solvent used in the composition for a hard mask according to the embodiments of the present invention is not particularly limited and may include an organic solvent having sufficient solubility in the above aromatic compound.
  • the solvent may be selected from the group consisting of propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, ethyl lactate, gamma-butyrolactone gamma -butyrolactone (GBL), acetyl acetone, and the like.
  • the content of the solvent is not particularly limited, and may be included in the remaining amount excluding the polymer of the aromatic compound and the additional agents described below.
  • the solvent may comprise from 30 to 90% by weight of the total weight of the composition for a hard mask.
  • composition for a hard mask according to the embodiments of the present invention may further include an additional agent such as a cross-linking agent, a catalyst, and a surfactant to improve the curing property.
  • an additional agent such as a cross-linking agent, a catalyst, and a surfactant to improve the curing property.
  • the crosslinking agent may be included for accelerating crosslinking of the repeating unit of the polymer of the aromatic compound, for example, it may react with the hydroxyl group of the polymer.
  • cross-linking agent examples include melamine, an amino resin, a glycoluril compound, and a bis-epoxy compound.
  • the cross-linking agent may be, for example, an etherified amino resin such as methylated or butylated melamine (specifically N-methoxymethyl-melamine or N-butoxymethyl-melamine) and methylated or butylated (Cymel U-65 Resin or UFR 80 Resin), a glycoluril derivative (see Chemical Formula 4, a specific example is Powderlink 1174), bis (hydroxymethyl) -p - cresol compounds and the like.
  • the bis-epoxy compound represented by the following formula (6) and the melamine compound represented by the following formula (7) may also be used as the crosslinking agent.
  • an acid catalyst or a basic catalyst may be used as the catalyst.
  • the acid catalyst may be a thermally activated acid catalyst.
  • an organic acid such as p-toluenesulfonic acid can be used.
  • a thermal acid generator (TAG) system compound may be used.
  • TAG thermal acid generator
  • the thermal acid generator system catalyst include pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexadiene, benzoin tosylate, 2-nitrobenzyltosyl Alkyl esters of organic sulfonic acids, and the like.
  • any one selected from among NH 4 OH or ammonium hydroxide represented by NR 4 OH (R is an alkyl group) can be used.
  • the content of the cross-linking agent may be about 1 to 30 parts by weight, preferably about 5 to 20 parts by weight, more preferably about 5 to 10 parts by weight based on 100 parts by weight of the polymer of the aromatic compound have.
  • the content of the catalyst may be about 0.001 to 5 parts by weight, preferably about 0.1 to 2 parts by weight, more preferably about 0.1 to 1 part by weight, per 100 parts by weight of the polymer of the aromatic compound Weight portion.
  • composition for a hard mask according to the embodiments of the present invention may further include a surfactant for improving the surface property and adhesiveness of the hard mask.
  • a surfactant for improving the surface property and adhesiveness of the hard mask.
  • alkylbenzenesulfonate, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt and the like can be used, but not limited thereto.
  • the amount of the surfactant may be, for example, about 0.1 to 10 parts by weight based on 100 parts by weight of the polymer of the aromatic compound.
  • embodiments of the present invention provide a method of forming a pattern using the hard mask composition.
  • a hard mask can be formed by forming a film to be etched on a substrate, and coating and hardening the above-mentioned hard mask composition on the film to be etched.
  • a photoresist film is formed on the hard mask, and the photoresist film is selectively exposed and developed to form a photoresist pattern.
  • a hard mask pattern may be formed by selectively etching the hard mask using the photoresist pattern.
  • a predetermined target pattern can be formed by selectively removing the etching target film using the photoresist pattern and the hard mask pattern together as an etching mask.
  • the substrate may comprise a silicon wafer or a semiconductor substrate fabricated from a germanium wafer.
  • the etch target film may include an insulating material such as silicon oxide, silicon nitride, etc., a conductive material such as metal or metal nitride, or a semiconductor material such as polysilicon.
  • a composition for a hard mask of the composition and the content (% by weight) shown in Table 1 below was prepared.
  • paratoluene sulfonic acid (5 mol% based on the monomer compound of the polymer) was used as an acid catalyst in the formation of the polymer (A).
  • A-1 (Weight-average molecular weight: 4,500) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A-2 (Weight-average molecular weight: 4,500) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A-3 (Weight average molecular weight: 4,700) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A-4 (Weight average molecular weight: 4,100) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A-5 (Weight average molecular weight: 3,800) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A-6 (Weight average molecular weight: 4,200) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A-7 (Weight average molecular weight: 4,600) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A-8 (Weight average molecular weight: 4,800) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A'-1 (Weight average molecular weight: 4,450) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A'-2 (Weight average molecular weight: 4,450) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A'-3 (Weight average molecular weight: 4,600) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A'-4 (Weight-average molecular weight: 4,900) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A'-5 (Weight average molecular weight: 4,400) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • A'-6 (Weight-average molecular weight: 4,500) produced through condensation polymerization in a molar ratio (1: 1 molar ratio)
  • compositions of the examples and comparative examples were stirred at 50 ° C for 1 hour and then 1) the dissolved state of the polymer at a heating temperature (50 ° C) was confirmed, and after cooling to room temperature, 2) , And further stirred at room temperature for 6 hours. (3) The dissolved state of the polymer was confirmed at the room temperature (25 DEG C), and the solubility was measured.
  • compositions of Examples and Comparative Examples were coated on a SiO 2 wafer substrate having a trench width of 10 ⁇ m and a depth of 0.50 ⁇ m and dried to form a hard mask film.
  • the thickness difference between the trench portion and the non-trench portion was measured by a scanning electron microscope (SEM) to evaluate flatness.
  • DELTA thickness difference of 175 to 200 nm
  • compositions according to Examples and Comparative Examples were respectively coated on a silicon wafer by spin coating and baked at 200 ° C for 60 seconds to form a 1500 ⁇ thick hard mask layer.
  • Each of the formed hard mask layers was coated with an ArF photoresist and baked at 110 ° C for 60 seconds. Exposure was then performed using ASML (XT: 1450G, NA 0.93) exposure equipment, and then TMAH (2.38 wt% aqueous solution) And developed to obtain a line-and-space pattern of 60 nm.
  • the cross-section of the photoresist pattern as a further cured at 110 °C 60 seconds, and the photoresist pattern and the CHF 3 / CF 4, using a gas mixture proceeds for 20 seconds to dry etching for each of the said hard mask layer, and FE-SEM And the etching rate was measured to determine the etching resistance against the halogen plasma.
  • DELTA etching rate of 11 A / sec or more and less than 12 A / sec
  • ⁇ etching rate of 12 A / sec or more
  • Examples 1 to 4 in which a fluorene-based compound was used as the first aromatic unit, exhibited excellent solubility and coating properties while maintaining proper etching resistance.
  • Examples 5 and 6 in which a carbazole or pyrene compound was used as the first aromatic unit, the etching resistance was remarkably improved.
  • Example 8 in which three aryl rings of the cyano group-containing second aromatic unit were contained, the solubility and flatness were somewhat reduced compared with Example 1.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Des modes de réalisation de la présente invention concernent une composition pour un masque dur, la composition comprenant: un polymère d'une première unité aromatique contenant une pluralité de cycles aryle et une seconde unité aromatique contenant un groupe cyano; et un solvant, la composition étant apte à former un masque dur ayant à la fois une résistance à la gravure et une solubilité améliorées.
PCT/KR2018/013466 2017-11-10 2018-11-07 Composition pour masque dur WO2019093757A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170149539A KR102402748B1 (ko) 2017-11-10 2017-11-10 하드마스크용 조성물
KR10-2017-0149539 2017-11-10

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WO2019093757A1 true WO2019093757A1 (fr) 2019-05-16

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Publication number Priority date Publication date Assignee Title
KR102504797B1 (ko) * 2020-03-31 2023-02-27 삼성에스디아이 주식회사 하드마스크 조성물 및 패턴 형성 방법

Citations (5)

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Publication number Priority date Publication date Assignee Title
KR20130130005A (ko) * 2010-12-09 2013-11-29 닛산 가가쿠 고교 가부시키 가이샤 수산기 함유 카바졸 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물
KR20150052861A (ko) * 2012-09-07 2015-05-14 닛산 가가쿠 고교 가부시키 가이샤 리소그래피용 레지스트 상층막 형성 조성물 및 이를 이용한 반도체 장치의 제조방법
KR20150079199A (ko) * 2013-12-31 2015-07-08 제일모직주식회사 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR20160112847A (ko) * 2015-03-20 2016-09-28 삼성에스디아이 주식회사 유기막 조성물, 유기막, 및 패턴형성방법
US20170198096A1 (en) * 2016-01-11 2017-07-13 Sang Jun Choi Composition of Anti-Reflective Hardmask

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009044742A1 (fr) 2007-10-01 2009-04-09 Nissan Chemical Industries, Ltd. Composition pour former un film de sous-couche de résist, procédé de fabrication d'un dispositif semi-conducteur avec celle-ci, et additif pour une composition pour former un film de sous-couche de résist

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130130005A (ko) * 2010-12-09 2013-11-29 닛산 가가쿠 고교 가부시키 가이샤 수산기 함유 카바졸 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물
KR20150052861A (ko) * 2012-09-07 2015-05-14 닛산 가가쿠 고교 가부시키 가이샤 리소그래피용 레지스트 상층막 형성 조성물 및 이를 이용한 반도체 장치의 제조방법
KR20150079199A (ko) * 2013-12-31 2015-07-08 제일모직주식회사 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR20160112847A (ko) * 2015-03-20 2016-09-28 삼성에스디아이 주식회사 유기막 조성물, 유기막, 및 패턴형성방법
US20170198096A1 (en) * 2016-01-11 2017-07-13 Sang Jun Choi Composition of Anti-Reflective Hardmask

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KR102402748B1 (ko) 2022-05-26
KR20190053545A (ko) 2019-05-20

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