WO2019139334A1 - 발광 장치 - Google Patents

발광 장치 Download PDF

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Publication number
WO2019139334A1
WO2019139334A1 PCT/KR2019/000286 KR2019000286W WO2019139334A1 WO 2019139334 A1 WO2019139334 A1 WO 2019139334A1 KR 2019000286 W KR2019000286 W KR 2019000286W WO 2019139334 A1 WO2019139334 A1 WO 2019139334A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
emitting chip
encapsulant
mount substrate
chip
Prior art date
Application number
PCT/KR2019/000286
Other languages
English (en)
French (fr)
Korean (ko)
Inventor
이영진
민승구
박기연
Original Assignee
서울바이오시스주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울바이오시스주식회사 filed Critical 서울바이오시스주식회사
Priority to CN201911344520.3A priority Critical patent/CN111048647B/zh
Priority to CN201980000924.2A priority patent/CN110249438B/zh
Publication of WO2019139334A1 publication Critical patent/WO2019139334A1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light emitting device.
  • LEDs Light emitting diodes
  • LEDs Light emitting diodes
  • the demand for a light emitting diode is continuously increasing due to various advantages such as a long lifetime, a low power supply, and excellent driving characteristics compared to a filament used in a conventional light emitting device.
  • a light-emitting diode (hereinafter referred to as a light-emitting chip) in a chip unit is packaged into a sealing material serving as a phosphor or a lens and applied to a light-emitting device.
  • Light emitted from the light emitting chip passes through the encapsulant and is emitted to the outside.
  • the sealing material can be cured by ultraviolet rays.
  • the encapsulant is cured by ultraviolet light, a crack may occur in a portion that is physically weak or has a relatively strong stress. When cracks are generated in the sealing material, the reliability of the light emitting device is deteriorated.
  • Another object of the present invention is to provide a light emitting device capable of improving light extraction efficiency.
  • a light emitting device includes a mount substrate, a light emitting chip, and a first encapsulant.
  • the light emitting chip is mounted on the mount substrate and emits ultraviolet rays.
  • the first encapsulation material covers at least a part of the side surface of the light emitting chip. At this time, the outer surface of the first encapsulant is curved.
  • the encapsulant is formed on a portion of the light emitting chip excluding the vertex of the top surface, thereby preventing cracks of the encapsulant from occurring near the vertex of the light emitting chip, thereby improving reliability.
  • the outer surface of the sealing material through which ultraviolet rays of the light emitting chip pass is formed to have a curvature, so that the light extraction efficiency is improved.
  • the light emitting device since the encapsulation material is formed only on the side surface and the upper surface of the light emitting chip, the light emitting device according to the embodiment of the present invention can reduce the cost.
  • FIG 1 and 2 are views showing an example of a light emitting device according to a first embodiment of the present invention.
  • FIG. 3 is a view showing an example of a crack generated in an encapsulant of a conventional light emitting device.
  • 4 and 5 are diagrams showing the light output of the light emitting device according to the structure of the sealing material.
  • FIG. 6 and 7 are views showing an example of a light emitting device according to a second embodiment of the present invention.
  • FIG 8 and 9 are views showing an example of a light emitting device according to a third embodiment of the present invention.
  • FIG. 10 is an exemplary view showing a light emitting device according to a fourth embodiment of the present invention.
  • the light emitting device includes a mount substrate, a light emitting chip and a first encapsulant.
  • the light emitting chip is mounted on the mount substrate and emits ultraviolet rays.
  • the first encapsulation material covers at least a part of the side surface of the light emitting chip. At this time, the outer surface of the first encapsulant is curved.
  • the light emitting chip is flip-chip bonded to the mount substrate.
  • the light emitting device may further include a submount substrate mounted on the mount substrate and electrically connected to the mount substrate. At this time, the light emitting chip is mounted on the submount substrate, and is flip-chip bonded to the submount substrate.
  • the submount substrate can be flip-chip bonded to the mount substrate.
  • the submount substrate may be wire-bonded to the mount substrate.
  • the wire is positioned at a lower height than the upper surface of the light emitting chip.
  • the first encapsulant is formed to cover the wire.
  • the first encapsulant may be formed of a silicone resin or an epoxy resin.
  • the thickness of the first encapsulant at the side of the light emitting chip becomes thicker from the top to the bottom.
  • the light emitted from the side surface of the light emitting chip and incident on the first encapsulant is refracted from the outer surface of the first encapsulant toward the upper direction of the light emitting chip.
  • the light emitting device may further include a second encapsulant covering the upper surface of the light emitting chip.
  • the second encapsulation material is formed so as not to cover the apexes of the upper surface of the light emitting chip.
  • the second encapsulant may be formed of a silicone resin or an epoxy resin.
  • the light emitting device may further include a reflection frame formed on the upper surface of the mount substrate and formed along the outer side of the first encapsulation member.
  • the light emitted from the light emitting chip and directed toward the reflection frame is reflected from the inner wall of the reflection frame toward the upper direction of the light emitting chip.
  • the inner wall of the reflection frame may have a slope.
  • the distance between the inner walls of the reflective frame and the inner walls facing each other increases toward the upper direction from the mount substrate.
  • the upper surface of the reflective frame is positioned higher than the upper surface of the light emitting chip.
  • FIG 1 and 2 are views showing an example of a light emitting device according to a first embodiment of the present invention.
  • FIG. 1 is a perspective view of a light emitting device 100 according to a first embodiment
  • FIG. 2 is a sectional view (A1-A2) of a light emitting device 100 according to the first embodiment.
  • the light emitting device 100 includes a mount substrate 110, a light emitting chip 120, and a first encapsulant 130.
  • the mount substrate 110 is not shown in detail but is made of an insulating material and a conductive material.
  • the conductive material forms a circuit pattern that is electrically connected to the light emitting chip 120.
  • the insulating material is placed between the circuit patterns to isolate the circuit patterns.
  • the mount substrate 110 may be a metal substrate composed of a plurality of lead frames 111 and an insulating material 112 surrounding the lead frames 111. Although not shown in FIG. 1, a part of the lead frame 111 is exposed to the outside through a side surface or a bottom surface of the mount substrate 110. The exposed portion of the lead frame 111 serves to electrically connect to other external components.
  • the mount substrate 110 may be a circuit board composed of at least one insulating layer and a circuit pattern layer.
  • the light emitting chip 120 is mounted on the mount substrate 110.
  • the light emitting chip 120 is a light emitting diode chip that emits ultraviolet rays.
  • the light emitting chip 120 is a structure in which an n-type first conductivity type semiconductor layer, a p-type second conductivity type semiconductor layer, and an active layer are stacked. At this time, the active layer is located between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.
  • the first electrode connected to the first conductive type semiconductor layer and the second electrode connected to the second conductive type semiconductor layer are both located below the light emitting chip 120. Accordingly, the light emitting chip 120 is mounted on and connected to the mount substrate 110 by a flip chip bonding method.
  • the light emitting chip 120 generates ultraviolet light in the active layer.
  • the generated ultraviolet rays are emitted to the outside through the upper surface and the side surface of the light emitting chip 120.
  • the first encapsulant 130 is formed to surround the side surface of the light emitting chip 120, as shown in Fig.
  • the first encapsulant 130 may be formed of an epoxy resin or a silicone resin.
  • the thickness of the first encapsulant 130 at the side surface of the light emitting chip 120 gradually increases from the upper portion to the lower portion. 1, the bottom surface of the first encapsulant 130 has a rectangular structure.
  • the first encapsulant 130 may be formed to have various structures such as a quadrilateral whose bottom edge has a circular shape, an elliptical shape, or a curved edge.
  • an encapsulating material serving as a lens was formed so as to cover the side surface and the upper surface of the light emitting chip.
  • the encapsulant is discolored or weakly cured by the ultraviolet rays emitted from the light emitting chip, and a cracking phenomenon occurs.
  • stress concentration occurs at a portion of the encapsulant covering the apex portion of the light emitting chip. Stress concentration is a phenomenon where stress concentrates on a local part, such as an angular part of an object or a part where a cross section changes abruptly. Therefore, when the encapsulant is cured by ultraviolet rays, stress concentration is most concentrated near the vertex of the light emitting chip. Accordingly, as shown in FIG.
  • the sealing material 10 is cured by the ultraviolet rays emitted from the light emitting chip 20, and cracks are generated in a portion covering the vertex of the light emitting chip. Since the lower surface of the light emitting chip is not covered with the sealing material but is in contact with the substrate, the portion where the sealing material is most likely to crack is near the vertex of the upper surface of the light emitting chip. The cracks in the encapsulant material occurring near the apex of the light emitting chip are then expanded to the entire encapsulant material.
  • a cavity and a transparent window are used. That is, in the conventional light emitting device of the embodiment, the light emitting chip is mounted on the cavity of the housing, and then the cavity is covered with the transparent window. However, the adhesive force of the adhesive between the housing and the transparent window can be reduced by the heat generation of the light emitting chip. Further, the temperature of the air inside the cavity rises due to the heat generation of the light emitting chip. At this time, a separate air discharge path must be formed in the housing for discharging the high temperature internal air. In addition, quartz, which is a material having a high unit price, is used as a transparent window, and a structure for seating a transparent window is formed in the housing. As described above, the conventional light emitting device for solving the cracking of the sealing material, which is a problem of the embodiment, increases the unit price due to the air discharge path and the transparent window, complicating the process.
  • the first encapsulant 130 does not cover the upper surface of the light emitting chip 120, but is formed to surround only the side surface of the light emitting chip 120. That is, since the first encapsulant 130 does not cover the vertex of the upper surface of the light emitting chip 120, the problem of cracking at the vertex of the light emitting chip 120 does not occur.
  • no separate component is located on the top of the light emitting chip 120. Therefore, the ultraviolet rays emitted through the upper surface of the light emitting chip 120 proceed directly to the upper side of the light emitting device 100.
  • the ultraviolet rays emitted through the side surface of the light emitting chip 120 pass through the first encapsulant 130.
  • the outer surface of the first encapsulant 130 is curved.
  • ultraviolet rays passing through the first encapsulant 130 are refracted from the outer surface of the first encapsulant 130. Accordingly, the traveling direction of the ultraviolet ray passing through the first encapsulant 130 can be determined according to the curvature of the outer surface of the first encapsulant 130.
  • the refracting power for refracting the ultraviolet rays is changed according to the curvature of the outer surface of the first encapsulant 130. [ Therefore, by reducing or increasing the curvature of the outer surface of the first encapsulant 130, the range over which the ultraviolet light is irradiated by the light emitting device 100 and the ultraviolet ray extraction efficiency can be controlled.
  • the curvature of the first encapsulant 130 may be controlled according to the amount and viscosity of the applied material.
  • the light emitting device 100 is formed so as not to surround the entire light emitting chip 120 but to surround the side surface of the light emitting chip 120, Since the ultraviolet rays emitted from the side surface of the light emitting chip 120 can be directed toward the upper direction of the light emitting device 100 by the first encapsulant 130, do.
  • a material of the first encapsulant 130 such as an epoxy resin or a silicone resin may be coated on the side of the light emitting chip 120 or the upper surface of the mount substrate 110 by a dotting method.
  • the volume of the first encapsulant 130 and the curvature of the outer surface of the first encapsulant 130 can be precisely controlled by finely adjusting the amount of the material of the first encapsulant 130 discharged using a piezoelectric element type injector, can do.
  • the material is applied to the upper surface of the mount substrate 110 through the side surface of the light emitting chip 120, or is applied to the upper surface of the mount substrate 110 along the periphery of the light emitting chip 120.
  • the first encapsulant 130 thus coated covers the side surface of the light emitting chip 120 as shown in Fig. 2 by surface tension, but the outer surface has a curvature.
  • the first encapsulant 130 is formed using a dipping method.
  • the method of forming the first encapsulant 130 is not limited thereto.
  • the first encapsulant 130 may be formed in any manner as long as the outer surface of the encapsulant 130 can be formed to have a curvature while covering the side surface of the light emitting chip 120 except the vertex of the top surface.
  • the light emitting device 100 thus formed can solve the cracks of the first encapsulant 130 generated near the upper surface of the light emitting chip 120 without a simple process and no additional cost increase.
  • the light emitting device 100 can prevent the occurrence of cracks in the first encapsulant 130, reduce the material cost, and improve the light extraction efficiency.
  • 4 and 5 are diagrams showing the light output of the light emitting device according to the structure of the sealing material.
  • the first encapsulant 130 of the light emitting device 100 may include a first structure 131, a second structure 132, and a third structure 132, depending on the amount of material applied to the light emitting chip 120 and the mount substrate 110.
  • a third structure 133, and a fourth structure Referring to FIG. ), A third structure 133, and a fourth structure.
  • the amount of material applied to the first encapsulant 130 from the first structure 131 to the third structure 133 decreases. Therefore, the angle? Between the first encapsulant 130 and the upper surface of the mount substrate 110 increases from the first structure 131 to the third structure 133. In the fourth structure, the first encapsulant 130 is omitted in the light emitting device 100.
  • the light output of the light emitting device 100 represents the fourth structure in which the first encapsulant 130 is omitted, as a reference of 100%.
  • the light output is 106% when the first encapsulant 130 is the first structure 131
  • the optical output is 108% when the first encapsulant 130 is the second structure 132, Is 111%.
  • the light emitting device 100 according to the first structure 131 to the third structure 133 of the first encapsulant 130 includes the light emitting device 100 in which the first encapsulant 130 is omitted (fourth structure) The light output was improved.
  • the light output ratio is the order of the third structure 133, the second structure 132, and the first structure 131. That is, the larger the angle? Between the outer surface of the first encapsulant 130 and the upper surface of the mount substrate 110, the higher the light output.
  • the light output of the light emitting device 100 can be adjusted according to the structure of the first encapsulant 130. Further, the structure of the first encapsulant 130 can be adjusted according to the amount of the material of the first encapsulant 130.
  • FIG. 6 and 7 are views showing an example of a light emitting device according to a second embodiment of the present invention.
  • FIG. 6 is a plan view of a light emitting device 200 according to a second embodiment of the present invention
  • FIG. 7 is a sectional view B1-B2 of a light emitting device 200 according to the second embodiment.
  • the light emitting device 200 includes a mount substrate 110, a light emitting chip 120, a first encapsulant 130, and a reflective frame 210.
  • the reflective frame 210 is formed along the outer side of the first encapsulant 130 on the upper surface of the mount substrate 110. That is, the reflection frame 210 is formed along the outer wall of the first encapsulant 130 or along the rim of the mount substrate 110. Accordingly, the light emitting device 200 has a structure in which the light emitting chip 120 and the first encapsulant 130 are mounted on the cavity formed by the inner walls of the reflective frame 210.
  • the light emitting device 200 of this embodiment is formed such that the first encapsulant 130 covers only a part of the side surface of the light emitting chip 120, not the entire side surface.
  • a part of the ultraviolet ray emitted through the side surface of the light emitting chip 120 is incident on the first encapsulant 130 and a part of the other ultraviolet ray is directed to the reflective frame 210.
  • the ultraviolet rays incident on the first encapsulant 130 are directed to the top of the light emitting device 200 by the outer surface of the first encapsulant 130.
  • the ultraviolet rays toward the reflective frame 210 are reflected by the reflective frame 210 and directed toward the upper portion of the light emitting device 200.
  • the light emitting device 200 according to the present embodiment can expect high light extraction efficiency even if the first encapsulant 130 covers only a part of the side surface of the light emitting chip 120 by the reflective frame 210. That is, the light emitting device 200 according to the present embodiment can further reduce the material cost for the first encapsulant 130 than the first embodiment.
  • the reflection frame 210 is higher in the upper surface than the light emitting chip 120. Accordingly, the inner wall of the reflective frame 210 faces the entire side surface of the light emitting chip 120, and is effective for reflecting the ultraviolet rays emitted from the side surface of the light emitting chip 120.
  • the inner wall of the reflective frame 210 is shown as being perpendicular to the upper surface of the mount substrate 110. However, the inclination of the inner wall of the reflection frame 210 may be changed according to the ultraviolet irradiation range of the light emitting device 200, or the like. For example, the inner wall of the reflective frame 210 may be inclined such that the distance between inner walls facing each other increases toward the upper direction from the mount substrate 110.
  • FIG 8 and 9 are views showing an example of a light emitting device according to a third embodiment of the present invention.
  • FIG. 8 is a plan view of a light emitting device 300 according to the third embodiment
  • FIG. 9 is a sectional view (C1-C2) of the light emitting device 300 according to the third embodiment.
  • the light emitting device 300 includes the mount substrate 110, the light emitting chip 120, the first encapsulant 130, and the second encapsulant 310 do.
  • the second encapsulant 310 is positioned on the upper surface of the light emitting chip 120. At this time, the second encapsulant 310 covers the upper surface of the light emitting chip 120, but is formed so as not to cover the vertex of the upper surface of the light emitting chip 120. When the second encapsulant 310 covers the vertex of the light emitting chip 120, the second encapsulant 310 may be cracked due to stress concentration occurring near the vertex of the light emitting chip 120.
  • the second encapsulant 310 is formed on the upper surface of the light emitting chip 120 and is formed on a portion of the light emitting chip 120 excluding the vertex of the light emitting chip 120 in order to prevent the second encapsulant 310 from cracking.
  • the second encapsulant 310 may be formed in a convex lens shape having a convex upper part.
  • the second encapsulant 310 having the same structure as the convex lens can condense ultraviolet rays emitted through the upper surface of the light emitting chip 120 toward the upper center of the light emitting device 300.
  • the second encapsulant 310 may have a concave-convex structure.
  • the second encapsulant 310 having a concavo-convex structure on its surface can prevent the ultraviolet rays from being totally reflected by the second encapsulant 310, thereby improving the light extraction efficiency of the light emitting device 300.
  • the second encapsulant 310 can be formed in various structures according to the effect required for the light emitting device 300.
  • the second encapsulant 310 may be formed of an epoxy resin or a silicone resin.
  • FIG. 10 is an exemplary view showing a light emitting device according to a fourth embodiment of the present invention.
  • the light emitting device 400 includes a mount substrate 110, a submount substrate 410, a light emitting chip 120, and a first encapsulant 130.
  • the submount substrate 410 is mounted on the mount substrate 110 and the light emitting chip 120 is mounted on the submount substrate 410.
  • the submount substrate 410 may be formed on the mounting substrate 110 in accordance with the difference in size between the light emitting chip 120 and the mount substrate 110
  • the submount substrate 410 is connected to the mount substrate 110 and the light emitting chip 120, respectively.
  • the submount substrate 410 thus formed electrically connects the mount substrate 110 and the light emitting chip 120.
  • the submount substrate 410 may be formed of any structure and material as long as it can electrically connect the mount substrate 110 and the light emitting chip 120.
  • the submount substrate 410 may be a printed circuit board, a ceramic substrate on which electrodes are formed, or a substrate including aluminum nitride (AIN) or silicon carbide (SiC) having high thermal conductivity.
  • the submount substrate 410 may be connected to the mount substrate 110 by a flip chip bonding method or by a wire bonding method.
  • a sub-mount substrate 410 is formed with circuit patterns electrically connected to the light emitting chip 120 and the mount substrate 110 on the upper surface thereof. Accordingly, the submount substrate 410 and the light emitting chip 120 are flip-chip bonded. In addition, the submount substrate 410 and the mount substrate 110 are wire-bonded by the wire 420. At this time, the wire 420 is positioned lower than the upper surface of the light emitting chip 120. That is, in this embodiment, the submount substrate 410 and the mount substrate 110 are connected by a wire bonding method as an example.
  • the first encapsulant 130 is formed to cover the side surface of the light emitting chip 120, the side surface of the submount substrate 410, and the wire 420.
  • the first encapsulant 130 thus formed is prevented from cracking at the vertex of the upper surface of the light emitting chip 120 and can protect the wire 420 from external environment such as impact, dust and moisture.
  • the submount substrate 410 is disposed in a lower direction of the light emitting chip 120, and ultraviolet rays emitted from the lower surface of the light emitting chip 120 may be reflected.
  • the first encapsulant 130 is also located on the lower periphery of the light emitting chip 120 by the submount substrate 410 so that the first encapsulant 130 is emitted in the lower direction of the light emitting chip 120 and passes through the first encapsulant 130
  • the ultraviolet light can be refracted toward the upper side of the light emitting device 400.
  • the outer surface having a small curvature can be formed or the detailed outer curvature can be easily adjusted.
  • the light emitting device 400 of the fourth embodiment is different from the second encapsulant (310 of FIGS. 8 and 9) or the reflective frame (FIGS. 6 and 7) that covers the upper surface portion of the light emitting chip 120, 210) may be further formed.
  • the description of the embodiment in which the light emitting device 400 includes the submount substrate 410 and the description of the embodiment in which the submount substrate 410 and the mount substrate 110 are connected by the flip chip bonding method is omitted .
  • the submount substrate 410 connected to the mount substrate 110 by the flip chip bonding method is applicable to the light emitting device 400 of this embodiment.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
PCT/KR2019/000286 2018-01-09 2019-01-08 발광 장치 WO2019139334A1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201911344520.3A CN111048647B (zh) 2018-01-09 2019-01-08 发光装置
CN201980000924.2A CN110249438B (zh) 2018-01-09 2019-01-08 发光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180002967A KR20190084807A (ko) 2018-01-09 2018-01-09 발광 장치
KR10-2018-0002967 2018-01-09

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WO2019139334A1 true WO2019139334A1 (ko) 2019-07-18

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WO (1) WO2019139334A1 (zh)

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