WO2019127628A1 - 一种真空溅射设备及其真空大气交换装置 - Google Patents

一种真空溅射设备及其真空大气交换装置 Download PDF

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WO2019127628A1
WO2019127628A1 PCT/CN2018/071266 CN2018071266W WO2019127628A1 WO 2019127628 A1 WO2019127628 A1 WO 2019127628A1 CN 2018071266 W CN2018071266 W CN 2018071266W WO 2019127628 A1 WO2019127628 A1 WO 2019127628A1
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vacuum
vacuum atmosphere
atmosphere exchange
sputtering apparatus
cooling
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PCT/CN2018/071266
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English (en)
French (fr)
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黄秋平
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深圳市华星光电技术有限公司
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Priority to US15/747,596 priority Critical patent/US20200123648A1/en
Publication of WO2019127628A1 publication Critical patent/WO2019127628A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/204—Means for introducing and/or outputting objects

Definitions

  • the present invention relates to the field of display panel manufacturing, and more particularly to a vacuum sputtering apparatus and a vacuum atmosphere exchange apparatus therefor.
  • the liquid crystal display has the characteristics of low radiation, low power consumption and small volume, and has gradually become the mainstream of display devices, and is widely used in mobile phones, notebook computers, flat panel televisions and the like.
  • panel sizes increase, pixel resolution requirements increase, and more and more production lines use larger vacuum sputtering equipment.
  • the vacuum sputtering equipment has the characteristics of large volume, high power, etc., in order to cope with the film forming requirements of larger sizes.
  • the demand for the reduction of the impedance of the conductive wire in each of the production line products directly causes an increase in the thickness of the sputtering film, resulting in a sharp rise in the temperature of the metal film.
  • the existing vacuum sputtering film forming apparatus sputters a copper film
  • the substrate temperature rises up to 190 degrees Celsius. Due to the increase in the temperature of the substrate, various problems such as oxidation of the coating film and unevenness due to temperature are easily caused, thereby affecting the film quality of the film formed and reducing the performance of the device.
  • the technical problem to be solved by the present invention is to provide a vacuum sputtering apparatus and a vacuum atmosphere exchange apparatus capable of efficiently and rapidly cooling a substrate after deposition to solve a film quality problem caused by excessive temperature and unevenness.
  • an embodiment of the present invention provides a vacuum atmosphere exchange device for a vacuum sputtering apparatus, in which a substrate transfer track is installed, and a vacuum atmosphere exchange device is provided with a transfer along a substrate transfer track.
  • a cooling device for rapidly cooling the film formation substrate on the substrate transfer track.
  • cooling device is disposed at a position intermediate the substrate transfer track and/or between the substrate transfer track and the inner wall of the chamber of the vacuum atmosphere exchange device.
  • the cooling device is disposed around the periphery of the substrate transfer track.
  • the inside of the cooling device is provided with a closed pipeline for circulating the cooling liquid, and the two ends of the sealed pipeline are respectively provided with a liquid inlet and a liquid outlet.
  • the cooling device is a block structure, which is formed by splicing independent pieces or pieces.
  • the surface of the cooling device is coated with a black coating.
  • the black coating is a carbon nanotube coating having an infrared absorption function or an inorganic semiconductor coating having an infrared absorption function.
  • the surface of the cooling device is evenly arranged with protrusions, and the surface of the protrusion is coated with a black coating.
  • the black coating is a carbon nanotube coating having an infrared absorption function or an inorganic semiconductor coating having an infrared absorption function.
  • the present invention also discloses a vacuum sputtering apparatus comprising: a film introduction chamber, a vacuum atmosphere exchange device connected to the film introduction chamber, a heating chamber connected to the vacuum atmosphere exchange device, and heating At least one film forming chamber connected to the chamber, a vacuum transfer device is provided with a substrate transfer track, and the vacuum atmosphere exchange device is provided with a transfer path along the substrate transfer track for transferring the substrate
  • the film-forming substrate on the track is cooled by a rapid cooling device, and the cooling device is a block structure, which is formed by splicing individual pieces or pieces.
  • the cooling device is disposed at an intermediate position of the substrate transfer track and/or a position between the substrate transfer track and a chamber inner wall of the vacuum atmosphere exchange device, wherein the inside of the cooling device is provided to A closed circuit for circulating a cooling liquid, and two ends of the sealed pipe are respectively provided with a liquid inlet and a liquid outlet.
  • the cooling device is disposed around the substrate transfer track, the inside of the cooling device is provided with a closed pipeline for circulating a cooling liquid, and the two ends of the sealed pipeline are respectively provided with a liquid inlet and Liquid outlet.
  • the surface of the cooling device is coated with a black coating.
  • the surface of the cooling device is evenly arranged with protrusions, and the surface of the protrusions is coated with a black coating.
  • the black coating layer is a carbon nanotube coating layer having an infrared absorption function or an inorganic semiconductor coating layer having an infrared absorption function.
  • the vacuum atmosphere exchange apparatus comprises: a vacuum atmosphere exchange apparatus body, a substrate transfer track is installed in the vacuum atmosphere exchange apparatus body, and the vacuum atmosphere exchange device
  • the main body is provided with a cooling device provided along the conveying path of the substrate conveying rail, and the cooling device can rapidly cool the film forming substrate on the substrate conveying rail to solve the film quality problem caused by excessive temperature and unevenness.
  • Figure 1 is a schematic view showing the structure of a vacuum sputtering apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic view showing the structure of a first embodiment of a vacuum atmosphere exchange device for a vacuum sputtering apparatus of the present invention.
  • FIG 3 is a schematic structural view of a second embodiment of a vacuum atmosphere exchange device for a vacuum sputtering apparatus of the present invention.
  • FIG. 4 is a top plan view showing a third embodiment of a vacuum atmosphere exchange device for a vacuum sputtering apparatus of the present invention.
  • Figure 5 is a side elevational view showing the third embodiment of the vacuum atmosphere exchange apparatus for vacuum sputtering apparatus of the present invention.
  • FIG. 1 there is shown a schematic structural view of a vacuum sputtering apparatus of the present invention.
  • the vacuum sputtering apparatus in this embodiment comprises: a film introduction chamber 2, a vacuum atmosphere exchange device connected to the film introduction chamber 2, a heating chamber 3 connected to the vacuum atmosphere exchange device 1, and a heating chamber 3 At least one film forming chamber 4 is connected.
  • the film introduction chamber 2, the vacuum atmosphere exchange device 1, the heating chamber 3, and the film formation chamber 4 are provided with a transfer track for transporting the substrate, and the transfer track may be continuous to the above cavity.
  • the integrated track of the chamber may also be a track of a plurality of transfer substrates respectively disposed in the respective chambers, and the tracks of the plurality of transfer substrates are set as connectable transfer substrates.
  • the vacuum breaking mechanism of the vacuum atmosphere exchange device 1 starts to work, using the tube
  • the vacuum inflating device 1 is inflated, and when inflated to the atmosphere, the door between the film chamber 2 and the vacuum atmosphere exchange device 1 is opened, and the substrate is transferred to the substrate transfer track in the vacuum atmosphere exchange device 1, and then closed.
  • the door of the vacuum atmosphere exchange device 1 and the pumping system of the vacuum atmosphere exchange device 1 start to operate, and the gas in the vacuum atmosphere exchange device 1 is taken out to reach a set pressure value, and then the door entering the direction of the heating chamber 3 is opened.
  • the sheet device (via the corresponding transfer track) is transferred to the heating chamber 3, thereby completing the flow of one sheet.
  • the substrate on which the sputtering film formation is completed in the film forming chamber 4 is transferred from the heating chamber 3 to the vacuum atmosphere exchange device 1, at which time the vacuum atmosphere exchange device 1 is in a vacuum state, and the vacuum breaking mechanism in the vacuum atmosphere exchange device 1 starts to work.
  • the vacuum atmosphere exchange device 1 is inflated by a line, and when inflated to the atmosphere, the door between the vacuum atmosphere exchange device 1 and the film introduction chamber 2 is opened, and the carrier device transports the substrate to the film introduction chamber 2. This repeated work alternately to achieve switching between vacuum and atmospheric conditions.
  • FIG. 2 there is shown a first embodiment of a vacuum atmosphere exchange apparatus for a vacuum sputtering apparatus of the present invention.
  • the vacuum atmosphere exchange device 1 for vacuum sputtering apparatus in this embodiment is provided with a substrate transfer track (not shown), and the substrate transfer track can be connected to the corresponding transfer track of the slide device in the film introduction chamber 2.
  • the vacuum atmosphere exchange device 1 is provided with a cooling device 11 for rapidly cooling the film formation substrate on the substrate transfer track along the transport path of the substrate transfer track.
  • the cooling device 11 may be disposed at an intermediate position of the substrate transfer track in the vacuum atmosphere exchange device 1, for example, under the carrier mechanism carrier substrate, so that the cooling device 11 can rapidly cool one side of the substrate.
  • the cooling device 11 can be disposed on the inner wall of the chamber in the vacuum atmosphere exchange device 1 and between the substrate transfer track and the inner wall of the vacuum atmosphere exchange device, so that the cooling device 11 can perform both sides of the substrate. Quick cooling.
  • the relative positional relationship between the cooling device 11 and the carrier mechanism carrier substrate is: within 20 mm of the substrate transfer path, with the lowest safe transmission path and the minimum close distance, that is, the substrate can be safely transmitted through without causing the cooling device to occur. Contact scratches with minimal spacing for maximum cooling and optimum temperature uniformity.
  • the cooling device 11 is a block structure, which is formed by splicing a single piece or a plurality of pieces.
  • the embodiment shown in FIG. 2 is a separate block structure; the embodiment shown in FIG. 3 is a plurality of pieces spliced.
  • Door glyph structure is a block structure, which is formed by splicing a single piece or a plurality of pieces.
  • a cooling conduit 111 for circulating a cooling liquid is disposed inside the cooling device 11, and both ends of the sealing conduit 111 are respectively provided with a liquid inlet 111a and a liquid outlet 111b.
  • the liquid inlet 111a and the liquid outlet 111b are used to enter and exit the coolant, and are respectively connected to the pipeline outside the vacuum atmosphere exchange device 1.
  • the coolant can be a conventional coolant or cooling water.
  • the cooling device 11 may be provided with a plurality of closed conduits 111 to enhance the cooling effect.
  • the surface of the cooling device 11 is coated with a black coating, and the black coating is a carbon nanotube coating having an infrared absorption function or an inorganic semiconductor coating having an infrared absorption function, so as to enhance the absorption coefficient of the surface of the cooling device 11. Increase the absorption rate of radiation.
  • FIG. 3 a second embodiment of a vacuum atmosphere exchange apparatus for a vacuum sputtering apparatus of the present invention is shown.
  • the vacuum atmosphere exchange device for vacuum sputtering apparatus in this embodiment is different from the above-described first embodiment in that the cooling device 11 is a gate-shaped structure in which a plurality of block structures are spliced. That is to say, the cooling device 11 is disposed around the periphery of the substrate transfer track, and the substrate carried by the slide mechanism is moved in and out of the middle of the cooling device 11, and the surrounding enclosed cooling can maximize the cooling effect.
  • FIG. 4 - 5 a third embodiment of a vacuum atmosphere exchange apparatus for a vacuum sputtering apparatus of the present invention is shown.
  • the vacuum atmosphere exchange device for a vacuum sputtering apparatus in this embodiment is different from the above-described first embodiment in that the surface of the cooling device 11 is uniformly arranged with projections 112.
  • the surface of the protrusion 112 is coated with a black coating, which is a carbon nanotube coating having an infrared absorption function or an inorganic semiconductor coating having an infrared absorption function.
  • the surface of the cooling device 11 is evenly arranged with the protrusions 112 to increase the contact area of the heat radiation, and the black coating coated on the surface of the protrusion 112 can enhance the absorption coefficient of the surface of the cooling device 11 and increase the radiation. Absorption rate.
  • the vacuum atmosphere exchange apparatus comprises: a vacuum atmosphere exchange apparatus body, a substrate transfer track is installed in the vacuum atmosphere exchange apparatus body, and the vacuum atmosphere exchange device
  • the main body is provided with a cooling device provided along the conveying path of the substrate conveying rail, and the cooling device can rapidly cool the film forming substrate on the substrate conveying rail to solve the film quality problem caused by excessive temperature and unevenness.

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Abstract

一种真空大气交换装置（1）及包含真空大气交换装置（1）的真空溅射设备，真空大气交换装置（1）中装设基板传送轨道，真空大气交换装置（1）中设有沿基板传送轨道的传送路径而设的用以对基板传送轨道上的成膜基板进行快速冷却的冷却装置（11），该真空大气交换装置（1）及真空溅射设备能够对沉积完成后的基板进行高效快速冷却，解决温度过高及不均匀导致的膜质问题。

Description

一种真空溅射设备及其真空大气交换装置
本申请要求于2017年12月27日提交中国专利局、申请号为201711444816.3、发明名称为“一种真空溅射设备及其真空大气交换装置”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示面板制造领域，尤其涉及一种真空溅射设备及其真空大气交换装置。
背景技术
现有技术中，液晶显示器具有低辐射、低功耗以及体积小等特点，逐渐成为显示器件的主流，广泛应用在手机、笔记本电脑、平板电视等产品上。随着面板尺寸逐渐增加，像素分辨率要求提高，越来越多的生产线应用更大型的真空溅射设备。一方面，该真空溅射设备具有大体积、高功率等特点，以应对更大尺寸的成膜需求。另一方面，各生产线产品对导电线阻抗降低的需求，直接引起溅射成膜厚度的增加，从而导致金属膜温度的急剧上升。
例如：现有的真空溅射成膜设备在溅射铜膜时，由相应的测定温度曲线可知，当溅射铜膜厚度增加到800nm时，基板温度最高上升到190摄氏度。由于基板温度的增加，极易引起所镀膜的氧化以及由温度引起的不均匀等各种问题，从而影响所成膜的膜质，降低设备的性能。
发明内容
本发明所要解决的技术问题在于，提供一种真空溅射设备及其真空大气交换装置，能够对沉积完成后的基板进行高效快速冷却，解决温度过高及不均匀导致的膜质问题。
为了解决上述技术问题，本发明实施例提供了一种用于真空溅射设备的真空大气交换装置，真空大气交换装置中装设基板传送轨道，真空大气交换装置中设有沿基板传送轨道的传送路径而设的用以对基板传送轨道上的成膜基板进行快速冷却的冷却装置。
其中，冷却装置设置在基板传送轨道的中间位置和/或基板传送轨道与真空大气交换装置的腔室内壁之间的位置上。
其中，冷却装置环绕设在基板传送轨道的四周位置。
其中，冷却装置的内部设有用以循环冷却液的密闭管路，密闭管路的两端分别设有进液口和出液口。
其中，冷却装置为块状结构，其为独立整块或多块拼接而成。
其中，冷却装置的表面涂覆黑色涂层。
其中，黑色涂层为具有红外吸收功能的碳纳米管涂层或具有红外吸收功能的无机半导体涂层。
其中，冷却装置的表面均匀排布有凸起，凸起的表面涂覆黑色涂层。
其中，黑色涂层为具有红外吸收功能的碳纳米管涂层或具有红外吸收功能的无机半导体涂层。
为解决上述技术问题，本发明还公开了一种真空溅射设备，包括：进片腔室、与进片腔室相连的真空大气交换装置、与真空大气交换装置相连的加热腔室以及与加热腔室相连的至少一个成膜腔室，真空大气交换装置中装设基板传送轨道，所述真空大气交换装置中设有沿所述基板传送轨道的传送路径而设的用以对所述基板传送轨道上的成膜基板进行快速冷却的冷却装置，所述冷却装置为块状结构，其为独立整块或多块拼接而成。
其中，所述冷却装置设置在所述基板传送轨道的中间位置和/或所述基板传送轨道与所述真空大气交换装置的腔室内壁之间的位置上，所述冷却装置的内部设有用以循环冷却液的密闭管路，所述密闭管路的两端分别设有进液口和出液口。
其中，所述冷却装置环绕设在所述基板传送轨道的四周位置，所述冷却装置的内部设有用以循环冷却液的密闭管路，所述密闭管路的两端分别设有进液口和出液口。
其中，所述冷却装置的表面涂覆黑色涂层。
其中，所述冷却装置的表面均匀排布有凸起，所述凸起的表面涂覆黑色涂层。
其中，所述黑色涂层为具有红外吸收功能的碳纳米管涂层或具有红外吸 收功能的无机半导体涂层。
实施本发明所提供的真空溅射设备及其真空大气交换装置，具有如下有益效果，真空大气交换装置包括：真空大气交换装置本体，真空大气交换装置本体中装设基板传送轨道，真空大气交换装置本体中设有沿基板传送轨道的传送路径而设的冷却装置，冷却装置能够对基板传送轨道上的成膜基板进行快速冷却，解决温度过高及不均匀导致的膜质问题。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例真空溅射设备的结构示意图。
图2是本发明用于真空溅射设备的真空大气交换装置实施例一的结构示意图。
图3是本发明用于真空溅射设备的真空大气交换装置实施例二的结构示意图。
图4是本发明用于真空溅射设备的真空大气交换装置实施例三的俯视结构示意图。
图5是本发明用于真空溅射设备的真空大气交换装置实施例三的侧视结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
参见图1，为本发明真空溅射设备的结构示意图。
本实施例中的真空溅射设备，包括：进片腔室2、与进片腔室2相连的真空大气交换装置1、与真空大气交换装置1相连的加热腔室3以及与加热腔室3相连的至少一个成膜腔室4。
本实施例中的真空溅射设备，进片腔室2、真空大气交换装置1、加热腔室3以及成膜腔室4中设有用以传送基板的传送轨道，传送轨道可为贯连上述腔室的一体式轨道，也可以是分别设置在各自腔室中的多条传送基板的轨道，多条传送基板的轨道设为可接驳传送基板。
具体实施时，当进片腔室2将基板放置在载片装置(通过相应的传送轨道)上并准备传送进真空大气交换装置1时，真空大气交换装置1的破真空机构开始工作，利用管路对真空大气交换装置1进行充气，充气到大气状态时，进片腔室2和真空大气交换装置1之间的门打开，基板传送至真空大气交换装置1中的基板传送轨道上，随后关闭真空大气交换装置1的门，真空大气交换装置1的抽气系统开始工作，将真空大气交换装置1内的气体抽出，达到设定的压力值后，打开进入加热腔室3方向的门，载片装置(通过相应的传送轨道)传送到加热腔室3，从而完成一次进片的流程。
在成膜腔室4完成溅射成膜的基板，从加热腔室3传送到真空大气交换装置1，此时真空大气交换装置1处于真空状态，真空大气交换装置1内的破真空机构开始工作，利用管路对真空大气交换装置1进行充气，充气到大气状态时，真空大气交换装置1和进片腔室2之间的门打开，载片装置传送基板到进片腔室2。如此反复交替工作，实现在真空与大气状态下的切换。
参见图2，为本发明用于真空溅射设备的真空大气交换装置的实施例一。
本实施例中的用于真空溅射设备的真空大气交换装置1中装设基板传送轨道(未图示)，基板传送轨道可接驳进片腔室2中载片装置具有的相应传送轨道.真空大气交换装置1中设有沿基板传送轨道的传送路径而设的用以对基板传送轨道上的成膜基板进行快速冷却的冷却装置11。
具体实施时，冷却装置11可以设置在真空大气交换装置1中基板传送轨道的中间位置，例如载片机构承载基板的下方，使冷却装置11能够对基板的单侧进行快速冷却。再如：冷却装置11可以设置在真空大气交换装置1中的腔室内壁上以及基板传送轨道与真空大气交换装置的腔室内壁之间的位置上，使冷却装置11能够对基板的双侧进行快速冷却。
优选的，冷却装置11与载片机构承载基板的相对位置关系是：靠近基板传送路径的20mm内，具有最低安全传送路径和最小靠近距离，即基板可 以安全的传送通过不会跟该冷却装置发生接触刮碰，同时具有最小的间距以实现最大冷却效果和最佳温度均匀性。
进一步的，冷却装置11为块状结构，其为独立整块或多块拼接而成，例如：图2所示实施方式为独立整块结构；图3所示实施方式为多块拼接而成的门字形结构。
进一步的，冷却装置11的内部设有用以循环冷却液的密闭管路111，密闭管路111的两端分别设有进液口111a和出液口111b。具体实施时，进液口111a和出液口111b用以进出冷却液，分别接入真空大气交换装置1外部的管路。冷却液可以为常规的冷却液或是冷却水。其它实施方式中，冷却装置11可以设置多条密闭管路111，以增强冷却效果。
进一步的，冷却装置11的表面涂覆黑色涂层，黑色涂层为具有红外吸收功能的碳纳米管涂层或具有红外吸收功能的无机半导体涂层，如此用以增强冷却装置11表面的吸收系数，提高辐射的吸收率。
参见图3，为本发明用于真空溅射设备的真空大气交换装置的实施例二。
本实施例中的用于真空溅射设备的真空大气交换装置与上述实施例一的不同在于：冷却装置11为多个块结构拼接而成的门字形结构。也就是说，冷却装置11环绕设在基板传送轨道的四周位置，载片机构承载的基板由冷却装置11的中间进出，环绕的包围式冷却可以最大效率的提高冷却效果。
参见图4-图5，为本发明用于真空溅射设备的真空大气交换装置的实施例三。
本实施例中的用于真空溅射设备的真空大气交换装置与上述实施例一的不同在于：冷却装置11的表面均匀排布有凸起112。凸起112的表面涂覆黑色涂层，黑色涂层为具有红外吸收功能的碳纳米管涂层或具有红外吸收功能的无机半导体涂层。
具体实施时，冷却装置11的表面均匀排布有凸起112的作用是：增加热辐射的接触面积，凸起112表面涂覆的黑色涂层，能够增强冷却装置11表面的吸收系数，提高辐射的吸收率。
实施本发明所提供的真空溅射设备及其真空大气交换装置，具有如下有益效果，真空大气交换装置包括：真空大气交换装置本体，真空大气交换装 置本体中装设基板传送轨道，真空大气交换装置本体中设有沿基板传送轨道的传送路径而设的冷却装置，冷却装置能够对基板传送轨道上的成膜基板进行快速冷却，解决温度过高及不均匀导致的膜质问题。

Claims (17)

  1. 一种用于真空溅射设备的真空大气交换装置，其中，
    所述真空大气交换装置中装设基板传送轨道，所述真空大气交换装置中设有沿所述基板传送轨道的传送路径而设的用以对所述基板传送轨道上的成膜基板进行快速冷却的冷却装置。
  2. 如权利要求1所述的用于真空溅射设备的真空大气交换装置，其中，所述冷却装置设置在所述基板传送轨道的中间位置和/或所述基板传送轨道与所述真空大气交换装置的腔室内壁之间的位置上。
  3. 如权利要求1所述的用于真空溅射设备的真空大气交换装置，其中，所述冷却装置环绕设在所述基板传送轨道的四周位置。
  4. 如权利要求2所述的用于真空溅射设备的真空大气交换装置，其中，所述冷却装置的内部设有用以循环冷却液的密闭管路，所述密闭管路的两端分别设有进液口和出液口。
  5. 如权利要求3所述的用于真空溅射设备的真空大气交换装置，其中，所述冷却装置的内部设有用以循环冷却液的密闭管路，所述密闭管路的两端分别设有进液口和出液口。
  6. 如权利要求1所述的用于真空溅射设备的真空大气交换装置，其中，所述冷却装置为块状结构，其为独立整块或多块拼接而成。
  7. 如权利要求1所述的用于真空溅射设备的真空大气交换装置，其中，所述冷却装置的表面涂覆黑色涂层。
  8. 如权利要求7所述的用于真空溅射设备的真空大气交换装置，其中，所述黑色涂层为具有红外吸收功能的碳纳米管涂层或具有红外吸收功能的无机半导体涂层。
  9. 如权利要求1所述的用于真空溅射设备的真空大气交换装置，其中，所述冷却装置的表面均匀排布有凸起，所述凸起的表面涂覆黑色涂层。
  10. 如权利要求9所述的用于真空溅射设备的真空大气交换装置，其中，所述黑色涂层为具有红外吸收功能的碳纳米管涂层或具有红外吸收功能的无机半导体涂层。
  11. 一种真空溅射设备，其中，包括：进片腔室、与所述进片腔室相连 的真空大气交换装置、与所述真空大气交换装置相连的加热腔室以及与所述加热腔室相连的至少一个成膜腔室，所述真空大气交换装置包括真空大气交换装置，所述真空大气交换装置中装设基板传送轨道，所述真空大气交换装置中设有沿所述基板传送轨道的传送路径而设的用以对所述基板传送轨道上的成膜基板进行快速冷却的冷却装置，所述冷却装置为块状结构，其为独立整块或多块拼接而成。
  12. 如权利要求11所述的真空溅射设备，其中，所述冷却装置设置在所述基板传送轨道的中间位置和/或所述基板传送轨道与所述真空大气交换装置的腔室内壁之间的位置上，所述冷却装置的内部设有用以循环冷却液的密闭管路，所述密闭管路的两端分别设有进液口和出液口。
  13. 如权利要求11所述的真空溅射设备，其中，所述冷却装置环绕设在所述基板传送轨道的四周位置，所述冷却装置的内部设有用以循环冷却液的密闭管路，所述密闭管路的两端分别设有进液口和出液口。
  14. 如权利要求11所述的真空溅射设备，其中，所述冷却装置的表面涂覆黑色涂层。
  15. 如权利要求14所述的真空溅射设备，其中，所述黑色涂层为具有红外吸收功能的碳纳米管涂层或具有红外吸收功能的无机半导体涂层。
  16. 如权利要求11所述的真空溅射设备，其中，所述冷却装置的表面均匀排布有凸起，所述凸起的表面涂覆黑色涂层。
  17. 如权利要求16所述的真空溅射设备，其中，所述黑色涂层为具有红外吸收功能的碳纳米管涂层或具有红外吸收功能的无机半导体涂层。
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