WO2019119805A1 - 光伏电池加工工艺以及光伏电池串焊固化装置 - Google Patents

光伏电池加工工艺以及光伏电池串焊固化装置 Download PDF

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WO2019119805A1
WO2019119805A1 PCT/CN2018/097469 CN2018097469W WO2019119805A1 WO 2019119805 A1 WO2019119805 A1 WO 2019119805A1 CN 2018097469 W CN2018097469 W CN 2018097469W WO 2019119805 A1 WO2019119805 A1 WO 2019119805A1
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electrode
photovoltaic cell
welding
battery
heating
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PCT/CN2018/097469
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English (en)
French (fr)
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郭政
黄同阳
蔡涔
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君泰创新（北京）科技有限公司
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
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    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Definitions

  • the invention relates to the technical field of solar cells, in particular to a photovoltaic cell processing technology and a photovoltaic cell string welding curing device.
  • heterojunction solar cells have become the focus of development with their high-efficiency advantages.
  • the last process of cell sheet preparation is generally printing of a silver paste electrode, followed by drying and solidification of the silver paste; after the cell sheet is processed, the string welding cell is followed by Process.
  • the silver paste is cured, infrared heating is required, and in the case of battery string welding, infrared heating is also required.
  • the silver paste curing of the battery sheet and the string welding of the battery sheet are respectively subjected to infrared heating processing, resulting in waste of resources, prolonged processing time, and reduced production efficiency.
  • the object of the present invention is to provide a photovoltaic cell processing technology and a photovoltaic cell string welding curing device to solve the above problems, save resources, shorten processing time, and improve production efficiency.
  • the invention provides a photovoltaic cell processing technology, comprising:
  • Step S1 performing coating on both sides of the single crystal silicon wafer
  • Step S2 preparing a first electrode on one side surface of the coated single crystal silicon wafer
  • Step S3 preparing a second electrode on the other side surface of the coated single crystal silicon wafer to form a battery sheet
  • Step S4 using a photovoltaic cell string welding curing device, a plurality of the battery sheets are subjected to string welding while curing the first electrode and the second electrode.
  • step S1 specifically includes:
  • Step S11 performing both texturing and cleaning on both sides of the single crystal silicon wafer
  • Step S12 sequentially depositing a first intrinsic passivation layer and a first amorphous silicon doped layer on one side of the single crystal silicon wafer; and depositing a second intrinsic passivation layer and a second non-deposit on the other side of the single crystal silicon wafer a crystalline silicon doped layer;
  • Step S13 depositing a first transparent conductive layer on the first amorphous silicon doped layer; and depositing a second transparent conductive layer on the second amorphous silicon doped layer.
  • step S2 specifically includes:
  • Step S21 forming a first electrode by performing screen printing on a mixed solution of silver and resin on the first transparent conductive layer;
  • Step S22 drying the first electrode.
  • step S3 specifically includes:
  • Step S31 performing a first printing of the mixed solution of silver and resin on the second transparent conductive layer by screen printing to form a second electrode underlayer;
  • Step S32 drying the bottom layer of the second electrode
  • Step S33 performing a second printing of the mixed solution of silver and resin on the second electrode underlayer by screen printing to form a second electrode;
  • Step S34 drying the second electrode.
  • step S4 specifically includes:
  • Step S41 arranging a plurality of the battery sheets on the conveying device at intervals, and placing the welding strip between the adjacent battery sheets, so that one end of the welding strip is in contact with the first electrode of one of the battery sheets, and the welding ribbon is The other end is in contact with the second electrode of the battery piece adjacent to one side;
  • Step S42 pressing the solder ribbon and the battery sheet by using a pressure pin
  • Step S43 heating is performed using a heating device to complete welding of the solder ribbon to the electrodes of the battery sheet to connect the plurality of battery cells in series while the first electrode and the second electrode are solidified.
  • the heating device comprises a first heating component disposed above the conveyor and a second heating component disposed below the conveyor;
  • Step S43 specifically includes: opening the first heating component and the second heating component, simultaneously heating the upper surface of the soldering strip, the battery sheet, and the lower surface of the battery sheet, so that the welding strip and the electrode of the battery sheet are welded. A plurality of cells are connected in series, and the first electrode and the second electrode are cured.
  • step S43 further comprises: controlling the heating device to heat the first electrode and the second electrode of the cell sheet to a temperature of between 150 and 230 degrees Celsius to 20 40 minutes.
  • step S13 a first transparent conductive layer is deposited on the first amorphous silicon doped layer by physical vapor deposition; and the second amorphous silicon is doped A second transparent conductive layer is deposited on the layer.
  • the invention also provides a photovoltaic cell string welding curing device, comprising:
  • a first heating assembly comprising an infrared heater and a hot air device; wherein the infrared heater and the hot air device are both liftable and disposed above a conveying surface of the conveying device;
  • the needle can be raised and lowered above the conveying surface of the conveying device.
  • the infrared heater, the hot air device and the pressing pin are fixedly connected to the support frame.
  • the photovoltaic cell string welding and curing device as described above, wherein, preferably, further comprising an electric lifting device, the electric lifting device comprising a lifting plate, the lifting plate being disposed above a conveying surface of the conveying device, The lifting plate is movable toward or away from the conveying device; the support frame is fixed to the lifting plate.
  • the electric lifting device comprising a lifting plate, the lifting plate being disposed above a conveying surface of the conveying device, The lifting plate is movable toward or away from the conveying device; the support frame is fixed to the lifting plate.
  • the electric lifting device further includes a driving member, and a driving end of the driving member is fixedly coupled to the lifting plate.
  • the photovoltaic cell string welding curing apparatus as described above, wherein preferably, further comprising a second heating assembly disposed on a side of the conveying device facing away from the conveying surface.
  • a photovoltaic cell string welding and curing apparatus as described above, wherein, preferably, further comprising a support platform for supporting the conveying device, the support platform being disposed below the conveying device; the second heating assembly being fixed On the support platform.
  • the invention provides a photovoltaic cell processing process, comprising the steps S1: coating on both sides of a single crystal silicon wafer; step S2: preparing a first electrode on one side surface of the coated single crystal silicon wafer; step S3 Forming a second electrode on the other side surface of the coated single crystal silicon wafer to form a battery sheet; and step S4: using a photovoltaic cell string soldering curing device to serially weld a plurality of the battery sheets while simultaneously The first electrode and the second electrode are cured.
  • the electrode on the battery sheet is solidified while the battery sheet is serially welded, which saves resources, shortens the processing time of the photovoltaic cell, and improves the production efficiency.
  • FIG. 1 is a flow chart of a photovoltaic cell processing process according to an embodiment of the present invention
  • FIG. 2 is a front view of a photovoltaic cell string welding and curing device according to an embodiment of the present invention
  • FIG. 3 is a side perspective view of a photovoltaic cell string welding and curing device according to an embodiment of the present invention.
  • the present invention provides a photovoltaic cell processing process, comprising:
  • Step S1 performing coating on both sides of the single crystal silicon wafer; the coating specifically includes the following steps:
  • Step S11 Both sides of the single crystal silicon wafer are subjected to texturing and cleaning.
  • the texturing is a suede having a pyramidal appearance on both sides of a single crystal silicon wafer.
  • the size of the pyramid is 1 to 10 micrometers, and the texturing can reduce the reflection of the surface of the single crystal silicon wafer, thereby increasing the conversion rate of the solar cell.
  • Step S12 sequentially depositing a first intrinsic passivation layer and a first amorphous silicon doped layer on one side of the single crystal silicon wafer; and depositing a second intrinsic passivation layer and a second non-deposit on the other side of the single crystal silicon wafer A crystalline silicon doped layer.
  • the intrinsic passivation layer and the amorphous silicon doped layer may be deposited on both sides of the single crystal silicon wafer by plasma enhanced chemical vapor deposition (PECVD) or hot filament chemical vapor deposition (HWCVD).
  • PECVD plasma enhanced chemical vapor deposition
  • HWCVD hot filament chemical vapor deposition
  • the first amorphous silicon doped layer is an N-type amorphous silicon based layer
  • the second amorphous silicon doped layer is a P-type amorphous silicon based layer
  • the first intrinsic passivation layer and the second intrinsic passivation layer Both are basic layers of amorphous silicon.
  • Step S13 depositing a first transparent conductive layer on the first amorphous silicon doped layer; and depositing a second transparent conductive layer on the second amorphous silicon doped layer.
  • a first transparent conductive layer on the first amorphous silicon doped layer
  • a second transparent conductive layer on the second amorphous silicon doped layer.
  • it can be prepared by physical vapor deposition (PVD) or by remote plasma plating (RPD).
  • the first transparent conductive layer and the second transparent conductive layer are both TCO glass layers.
  • Step S2 preparing a first electrode on one side surface of the coated single crystal silicon wafer.
  • a first electrode is prepared on the first transparent conductive layer.
  • a plurality of first fine gate lines and a first main gate line may be printed on the first transparent conductive layer by screen printing, and the plurality of first fine gate lines and the first main gate lines constitute the first electrode.
  • the electrodes of the battery sheet are mostly made of a mixed solution of silver paste and resin, after the first electrode is prepared, the first electrode needs to be dried. Specifically, drying can be performed using a hot air blower.
  • Step S3 A second electrode is prepared on the other side surface of the coated single crystal silicon wafer to form a battery sheet. Specifically, a second electrode is prepared on the second transparent conductive layer to form a battery sheet. Further, the first electrode and the second electrode are both made of a silver paste and a resin material.
  • the process for preparing the second electrode specifically includes performing a first printing on the second transparent conductive layer by screen printing to form a second electrode underlayer; drying the second electrode underlayer; and performing screen printing on the second electrode underlayer. The second printing is performed in a second manner, and the second electrode is finally dried. Specifically, drying can be performed using a hot air blower.
  • a plurality of second fine gate lines may be printed on the second transparent conductive layer to form a second electrode underlayer by screen printing
  • a plurality of third fine gate lines may be printed on the second electrode underlayer by screen printing.
  • a second main gate line, and the third thin gate line covers the second fine gate line, and the second thin gate line, the third thin gate line, and the second main gate line constitute a second electrode.
  • the processed battery piece is a double-sided power generation battery, it is necessary to print electrodes on both sides of the single crystal silicon wafer.
  • the silver content of the electrode on the larger side of the light receiving surface can be increased. . Therefore, the second electrode is printed twice, and the thickness of the second fine gate line of the second electrode underlayer formed by the first printing is equal to the thickness of the first fine gate line of the first electrode, and after the second printing, the second electrode
  • the total thickness of the second fine gate line and the third fine gate line is twice that of the first fine gate line of the first electrode, and the conduction efficiency thereof is also greatly improved.
  • Step S4 using a photovoltaic cell string welding curing device, serially welding a plurality of battery sheets while curing the first electrode and the second electrode.
  • the photovoltaic cell string solder curing apparatus provided in conjunction with FIGS. 2 and 3 is described below.
  • Step S4 specifically includes step S41: arranging a plurality of battery sheets on the conveying device 10 at intervals, and placing the welding strip between adjacent battery sheets, and connecting the two ends of the welding strip to the different electrodes of the adjacent battery sheets. .
  • the battery sheets are arranged, the proper distance should be maintained, and the number of the arrays can be adjusted according to actual conditions.
  • 2 to 12 battery sheets can be arranged on the conveying device 10, adjacent to each other.
  • a soldering strip is disposed between the battery sheets, one end of the soldering strip is connected to the first electrode of one of the battery sheets, and the other end of the soldering strip is connected to the second electrode of the adjacent battery sheet.
  • Step S42 The solder ribbon is crimped to the battery sheet using a press pin 40. Specifically, when the battery piece and the welding tape are placed, the pressing pin 40 is away from the conveying device 10. After the positioning is completed, the pressing pin 40 is moved to the connection between the welding tape and the battery piece, and the welding tape and the battery piece are pressed. Tightly fixed.
  • Step S43 heating is performed using a heating device to complete welding of the solder ribbon and the electrodes of the battery sheet to connect the plurality of battery cells in series while the first electrode and the second electrode are solidified.
  • the heating device is activated to heat the cell and the strip for 20 to 40 minutes at a temperature of 150 to 230 degrees Celsius, for example, at 150 degrees Celsius for the cell and the strip.
  • the cell and the ribbon were heated for 40 minutes or at a temperature of 230 degrees Celsius for 20 minutes.
  • the electrodes of the ribbon and the cell were welded, and thus, the plurality of cells were successfully connected in series.
  • the first electrode and the second electrode on the battery sheet are heated to be solidified, and the processing is completed.
  • the pressing needle can move upward away from the battery sheet and the welding strip after the pressing pin and the battery piece are assisted in welding.
  • the heating device heats the battery sheet and the ribbon at a temperature of 150 to 230 degrees Celsius for 20 to 40 minutes, mainly curing the first electrode and the second electrode on the battery sheet.
  • the heating device includes a first heating assembly 30 disposed above the conveying device 10 and a second heating assembly disposed below the conveying device 10; after the pressing pin 40 presses the welding strip and the battery sheet, the first opening A heating assembly 30 and a second heating assembly heat the solder ribbon, the upper surface of the battery sheet, and the lower surface of the battery sheet, thereby simultaneously curing the first electrode and the second electrode.
  • the first heating assembly 30 described above includes an infrared heater and a hot air device, and the second heating assembly may be a resistance heating sheet heater.
  • the process steps of curing the electrode when processing the battery sheet are eliminated, and the electrode on the battery sheet is solidified while the battery sheet is serially welded, thereby saving resources and shortening the photovoltaic cell. Processing time increases production efficiency. It should be understood that after the completion of the string welding, there is a conventional packaging process.
  • an embodiment of the present invention further provides a photovoltaic cell string welding and curing device, including a conveying device 10, a first heating assembly 30, and a pressing needle 40.
  • the first heating assembly 30 includes an infrared heater and a hot air device; both the infrared heater and the hot air device are disposed above and below the conveying surface of the conveying device 10; and the pressing needle 40 is movable up and down on the conveying surface of the conveying device 10.
  • the above conveying device 10 is a conveyor belt.
  • a plurality of battery cells are arranged on the conveyor 10 at intervals, and the ribbon is placed between adjacent cells, and the two ends of the ribbon are respectively connected to the different electrodes of the adjacent cells.
  • the proper distance should be maintained, and the number of the arrays can be adjusted according to actual conditions.
  • 2 to 12 battery sheets can be arranged on the conveying device 10, adjacent to each other.
  • a soldering strip is disposed between the battery sheets, one end of the soldering strip is connected to the second electrode of one of the battery sheets, and the other end of the soldering strip is connected to the first electrode of the adjacent battery sheet.
  • the pressing pin 40 and the first heating assembly 30 are moved downwards close to the conveying surface of the conveying device 10, so that the pressing pin 40 presses the welding strip and the battery sheet to prevent the movement of the battery sheet and the welding belt during the subsequent welding, resulting in welding.
  • Bad phenomenon Specifically, when the battery piece and the welding tape are placed, the pressing pin 40 is away from the conveyor belt conveying device 10. After the positioning is completed, the pressing pin 40 is moved to a position where the welding tape and the battery piece are not required to be welded, and thus will be The solder ribbon is pressed against the battery.
  • the infrared heater and the hot air device are turned on, so that the second electrode and the first electrode of the cell are cured while the string is being soldered.
  • the photovoltaic cell string welding and curing device uses the pin 40 to press the solder ribbon and the battery sheet, and then uses the first heating assembly 30 to complete the string welding of the battery sheet and the welding strip, and the first electrode of the battery sheet. And the second electrode of the cell is cured. Simultaneous processing of string welding and curing is achieved. It saves resources, shortens the processing time of photovoltaic cells, and improves production efficiency.
  • the infrared heater is a concentrated point heating method, and the hot air device blows out the hot air, and all the battery sheets are fully heated, and the two mutually assist each other to efficiently and reliably complete the welding and curing.
  • the photovoltaic cell string welding and curing device provided by the embodiment of the present invention further includes an electric lifting device, wherein the electric lifting device includes a lifting plate 20, and the lifting plate 20 is disposed above the conveying surface of the conveying device 10, and the lifting plate 20 can be approached Or moving away from the conveying device 10; the first heating assembly 30 and the pressing pin 40 are both fixedly connected to the lifting plate 20.
  • the electric lifting device includes a lifting plate 20, and the lifting plate 20 is disposed above the conveying surface of the conveying device 10, and the lifting plate 20 can be approached Or moving away from the conveying device 10; the first heating assembly 30 and the pressing pin 40 are both fixedly connected to the lifting plate 20.
  • the photovoltaic cell string welding and curing device provided by the embodiment of the present invention further includes a second heating assembly (not shown) disposed on a side of the conveying device 10 away from the conveying surface.
  • the second heating component may be a resistance heating sheet and the number is plural. That is, the first heating unit 30 is disposed above the conveyor 10, and the second heating unit is disposed below the conveyor 10 so that both the upper and lower sides of the battery and the ribbon can be heated.
  • the electric lifting device is activated such that the lifting plate 20 drives the pressing needle 40 and the first heating assembly 30 to move upward away from the conveying surface of the conveying device 10, and then arranges the plurality of battery sheets on the conveying device 10 at intervals, and welds
  • the tape is placed between adjacent cells, and the two ends of the ribbon are respectively connected to the different electrodes of the adjacent cells.
  • the electric lifting device is operated to move the lifting plate 20 downward, and the pressing pin 40 and the first heating assembly 30 are moved downward to move closer to the conveying surface of the conveying device 10, so that the pressing pin 40 does not need the welding tape and the battery sheet.
  • the position of the weld is crimped.
  • the number of the above-mentioned electric lifting devices is two, and the use of two electric lifting devices can increase the smoothness of the up and down movement of the pressing pin 40 and the first heating assembly 30, as well as the fixing reliability, and improve the operational safety factor.
  • the photovoltaic cell string welding and curing device provided by the embodiment of the present invention further includes a support frame 50, and the support frame 50 is fixedly connected with the two lifting plates 20; the infrared heater, the hot air device and the pressing pin are fixed on the support frame 50, wherein
  • the infrared heater may specifically be an infrared light tube.
  • the heat generating surface of the infrared light tube faces the conveying surface of the conveying device, and the hot air device may be a fan that blows hot air toward the conveying surface of the conveying device.
  • the pressing needle 40 is fixed on the lower side of the support frame 50. Near the side of the conveyor 10. Referring to FIG. 3, it can be seen that the support frame 50 has a rectangular parallelepiped shape with 10 infrared tubes mounted thereon. When the lifting plate 20 is moved downward, the pressing pin 40 first presses the battery piece and the welding tape.
  • the lifting plate 20 is a rectangular plate, one side of the supporting frame 50 is fixedly connected to one side of the bottom of the rectangular plate, and one end of the lifting plate 20 away from the supporting frame 50 is provided with a connecting protrusion 21.
  • the electric lifting device further includes a driving member, and the driving end of the driving member is fixedly coupled to the lifting plate 20.
  • the driving member is a cylinder
  • the connecting rod of the cylinder is fixedly connected with the connecting protrusion 21 on the lifting plate 20, thereby controlling the lifting plate 20 to rise and fall to drive the pressing pin 40 and the first heating assembly 30 to move up and down.
  • the photovoltaic cell string welding and curing device provided by the embodiment of the present invention further includes a support platform 60 for supporting the conveyor device 10, the support platform 60 is disposed under the conveyor device 10; and the second heating assembly is fixed on the support platform 60 for transmission.
  • the support platform 60 is used to support the conveyor 10 such that the conveying surface of the conveyor 10 remains stable during operation, avoiding movement of the battery sheets and ribbons, resulting in string welding failure.

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Abstract

一种光伏电池加工工艺以及光伏电池串焊固化装置，其中前者包括步骤S1：在单晶硅片的两侧表面进行镀膜；步骤S2：在镀膜完成的单晶硅片的一侧表面上制备第一电极；步骤S3：在镀膜完成的单晶硅片的另一侧表面上制备第二电极，以形成电池片；步骤S4：使用光伏电池串焊固化装置，将多个电池片进行串焊，同时对第一电极和第二电极进行固化。使用该加工工艺，在串焊电池片的同时，对电池片上的电极进行固化，节省了资源，缩短了光伏电池的加工时间，提高了生产效率。

Description

光伏电池加工工艺以及光伏电池串焊固化装置 技术领域
本发明涉及太阳能电池技术领域，尤其涉及一种光伏电池加工工艺以及光伏电池串焊固化装置。
背景技术
随着地球上石油、煤炭等自然资源日益减少，开发新的自然资源成为当务之急，目前，太阳能以其清洁的优势成为开发的重点。
太阳能的利用，主要是通过太阳能电池将太阳光辐射转换成电能和热能等人类可以利用的资源。高效异质结太阳能电池以其高效的优势成为发展重点，在制备异质结太阳能电池时，需要首先制备电池片，电池片制备完成后，将多个电池片通过焊带串焊成电池串，最后将电池串与背板、前板等封装材料封装完成，整个异质结太阳能电池加工完成。
在上述制备异质结太阳能电池的过程中，电池片制备的最后一道工序一般为银浆电极的印刷，然后进行银浆的烘干和固化；电池片加工完成后，紧接着为串焊电池片的工序。目前，进行银浆的固化时，需要使用红外加热方式，而在电池片串焊时，同样需要用到红外加热的方式。
目前，电池片的银浆固化和电池片的串焊分别进行红外加热加工，导致资源的浪费，以及加工时间延长，降低了生产效率。
发明内容
本发明的目的提供一种光伏电池加工工艺以及光伏电池串焊固化装置，以解决上述问题，节省资源，缩短加工时间，提高生产效率。
本发明提供的一种光伏电池加工工艺，包括：
步骤S1：在单晶硅片的两侧表面进行镀膜；
步骤S2：在镀膜完成的单晶硅片的一侧表面上制备第一电极；
步骤S3：在镀膜完成的单晶硅片的另一侧表面上制备第二电极，以形成电池片；
步骤S4：使用光伏电池串焊固化装置，将多个所述电池片进行串焊，同时对所述第一电 极和所述第二电极进行固化。
如上所述的光伏电池加工工艺，其中，优选的是，步骤S1具体包括：
步骤S11：对单晶硅片的两面进行制绒和清洗；
步骤S12：在单晶硅片的一面依次沉积第一本征钝化层和第一非晶硅掺杂层；在单晶硅片的另一面依次沉积第二本征钝化层和第二非晶硅掺杂层；
步骤S13：在第一非晶硅掺杂层上沉积第一透明导电层；在第二非晶硅掺杂层上沉积第二透明导电层。
如上所述的光伏电池加工工艺，其中，优选的是，步骤S2具体包括：
步骤S21：在第一透明导电层上将银和树脂的混合溶液通过丝网印刷形成第一电极；
步骤S22：烘干所述第一电极。
如上所述的光伏电池加工工艺，其中，优选的是，步骤S3具体包括：
步骤S31：在第二透明导电层上将银和树脂的混合溶液通过丝网印刷方式进行第一次印刷，形成第二电极底层；
步骤S32：烘干第二电极底层；
步骤S33：在第二电极底层上将银和树脂的混合溶液通过丝网印刷方式进行第二次印刷，形成第二电极；
步骤S34：烘干所述第二电极。
如上所述的光伏电池加工工艺，其中，优选的是，步骤S4具体包括：
步骤S41：将多个所述电池片间隔排列在传送装置上，并将焊带摆放在相邻的电池片之间，使焊带的一端与一个电池片的第一电极接触，焊带的另一端与一侧相邻的电池片的第二电极接触；
步骤S42：使用压针将焊带及电池片进行压紧；
步骤S43：使用加热装置进行加热，使焊带与电池片的电极完成焊接以将多个电池片串联，同时所述第一电极和所述第二电极固化。
如上所述的光伏电池加工工艺，其中，优选的是，步骤S43中，加热装置包括设置在传送装置上方的第一加热组件和设置在传送装置下方的第二加热组件；
步骤S43具体包括：打开所述第一加热组件和所述第二加热组件，对焊带、电池片的上表面以及电池片的下表面同时加热，从而使焊带与电池片的电极完成焊接以将多个电池片串联，所述第一电极和所述第二电极固化。
如上所述的光伏电池加工工艺，其中，优选的是，步骤S43还包括，控制所述加热装置以150至230摄氏度之间的温度，对电池片的第一电极和第二电极固化加热20至40分钟。如上所述的光伏电池加工工艺，其中，优选的是，步骤S12中，采用等离子体增强化学的气相沉积法或者热丝化学气相沉积方式，在单晶硅片的一面依次沉积第一本征钝化层和第一非晶硅掺杂层；在单晶硅片的另一面依次沉积第二本征钝化层和第二非晶硅掺杂层。
如上所述的光伏电池加工工艺，其中，优选的是，步骤S13中，采用物理气相沉积方式，在第一非晶硅掺杂层上沉积第一透明导电层；在第二非晶硅掺杂层上沉积第二透明导电层。
本发明还提供了一种光伏电池串焊固化装置，包括：
传送装置；
第一加热组件，包括红外加热器和热风装置；所述红外加热器和所述热风装置均可升降的设置在所述传送装置的传送面的上方；
压针，所述压针可升降的设置在所述传送装置的传送面的上方。
如上所述的光伏电池串焊固化装置，其中，优选的是，还包括支撑架，所述支撑架可升降的设置在所述传送装置的传送面上方；
所述红外加热器、所述热风装置和所述压针均固定连接于所述支撑架上。
如上所述的光伏电池串焊固化装置，其中，优选的是，还包括电动升降装置，所述电动升降装置包括升降板，所述升降板设置在所述传送装置的传送面的上方，所述升降板能向靠近或者远离所述传送装置的方向移动；所述支撑架固定于与所述升降板上。
如上所述的光伏电池串焊固化装置，其中，优选的是，所述电动升降装置还包括驱动件，所述驱动件的驱动端与所述升降板固定连接。
如上所述的光伏电池串焊固化装置，其中，优选的是，还包括第二加热组件，所述第二加热组件设置在所述传送装置背离所述传送面的一侧。
如上所述的光伏电池串焊固化装置，其中，优选的是，还包括用于支撑所述传送装置的支撑平台，所述支撑平台设置在所述传送装置的下方；所述第二加热组件固定在所述支撑平台上。
本发明提供了一种光伏电池加工工艺，包括步骤S1：在单晶硅片的两侧表面进行镀膜；步骤S2：在镀膜完成的单晶硅片的一侧表面上制备第一电极；步骤S3：在镀膜完成的单晶硅片的另一侧表面上制备第二电极，以形成电池片；步骤S4：使用光伏电池串焊固化装置，将多个所述电池片进行串焊，同时对所述第一电极和所述第二电极进行固化。使用本发明提供的加工工艺，采用在串焊电池片的同时，对电池片上的电极进行固化，节省了资源，缩短了光伏电池的加工时间，提高了生产效率。
附图说明
图1为本发明实施例提供的光伏电池加工工艺的流程图；
图2为本实用新型实施例提供的光伏电池串焊固化装置的主视图；
图3为本实用新型实施例提供的光伏电池串焊固化装置的侧面立体图。
附图标记说明：
10-传送装置     20-升降板     21-连接凸起     30-第一加热组件
40-压针         50-支撑架     60-支撑平台
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。
如图1所示，本发明提供了一种光伏电池加工工艺，包括：
步骤S1：在单晶硅片的两侧表面进行镀膜；该镀膜具体包括以下步骤：
步骤S11：对单晶硅片的两面进行制绒和清洗。制绒即为在单晶硅片的两面形成金字塔容貌的绒面，金字塔的尺寸为1至10微米，制绒可以降低单晶硅片表面的反射，从而增加太阳能电池片的转换率。
步骤S12：在单晶硅片的一面依次沉积第一本征钝化层和第一非晶硅掺杂层；在单晶硅片的另一面依次沉积第二本征钝化层和第二非晶硅掺杂层。具体地，可以采用等离子体增强化学的气相沉积法(PECVD)或者热丝化学气相沉积(HWCVD)的方式在单晶硅片的两面沉积上述本征钝化层和非晶硅掺杂层。两个本征钝化层和两个非晶硅掺杂层采用相同的方式，在不同的腔室中沉积形成，可以放在同一步骤中完成加工。优选地，第一非晶硅掺杂层为N型 非晶硅基层，第二非晶硅掺杂层为P型非晶硅基层；第一本征钝化层和第二本征钝化层均为非晶硅基本征层。
步骤S13：在第一非晶硅掺杂层上沉积第一透明导电层；在第二非晶硅掺杂层上沉积第二透明导电层。具体地，可以采用物理气相沉积(PVD)的方式制备，也可以采用远程等离子体镀膜(RPD)的方式制备完成。优选地，上述第一透明导电层和第二透明导电层均为TCO玻璃层。
步骤S2：镀膜完成的单晶硅片的一侧表面制备第一电极。具体地，在第一透明导电层上制备第一电极。优选地，可以采用丝网印刷方式在第一透明导电层上印刷多条第一细栅线和第一主栅线，多条第一细栅线和第一主栅线组成第一电极。本领域技术人员可以理解的是，由于电池片的电极多为银浆和树脂的混合溶液制成，因此制备完第一电极之后，需要对第一电极进行烘干。具体地，可以采用热风机进行烘干。
步骤S3：在镀膜完成的单晶硅片的另一侧表面上制备第二电极，以形成电池片。具体地，在第二透明导电层上制备第二电极，以形成电池片。进一步地，第一电极和第二电极均使用银浆和树脂材质制成。而制备第二电极的过程具体包括在第二透明导电层上通过丝网印刷方式进行第一次印刷，形成第二电极底层；烘干第二电极底层；在第二电极底层上通过丝网印刷方式进行第二次印刷，形成第二电极；最后烘干上述第二电极。具体地，可以采用热风机进行烘干。
更具体地，可以采用丝网印刷方式在第二透明导电层印刷多条第二细栅线形成第二电极底层,在第二电极底层上通过丝网印刷方式印刷多条第三细栅线和第二主栅线，且第三细栅线覆盖所述第二细栅线，所述第二细栅线、第三细栅线和第二主栅线组成第二电极。
由于加工的电池片为双面发电的电池，因此，需要在单晶硅片的两面均印刷电极，在实际应用过程中，为了提高导电效率，可以增加受光面较大的一面的电极的银含量。因此，该第二电极分两次印刷，第一次印刷形成的第二电极底层的第二细栅线的厚度等于第一电极的第一细栅线的厚度，两次印刷之后，第二电极的第二细栅线和第三细栅线的总厚度为第一电极的第一细栅线的两倍，其导电效率也大为提高。
步骤S4：使用光伏电池串焊固化装置，将多个电池片进行串焊，同时对第一电极和第二电极进行固化。以下描述时，结合图2和图3提供的光伏电池串焊固化装置进行描述。
步骤S4具体包括步骤S41：将多个电池片间隔排列在传送装置10上，并将焊带摆放在相邻的电池片之间，焊带的两端分别连接相邻电池片的相异电极。本领域技术人员应当理解 的是，电池片排列时，应当保持适当的距离，并且排列的数量可以根据实际情况进行调整，例如：可以在传送装置10上排列2至12片电池片，相邻的电池片之间均设置有焊带，焊带的一端连接一个电池片的第一电极，焊带的另一端连接相邻电池片的第二电极。
步骤S42：使用压针40将焊带与电池片进行压接。具体地，摆放电池片和焊带时，压针40远离传送装置10，摆放完成后，将压针40移动至压接在焊带与电池片的连接处，将焊带及电池片压紧固定。
步骤S43：使用加热装置进行加热，使焊带与电池片的电极完成焊接以将多个电池片串联，同时第一电极和第二电极固化。压针40将焊带及电池片压紧之后，启动加热装置，以150至230摄氏度的温度，对电池片和焊带加热20至40分钟，例如，以150摄氏度的温度对电池片和焊带加热40分钟，或以230摄氏度的温度对电池片和焊带加热20分钟，此时，焊带与电池片的的电极完成焊接，因此，多个电池片被串联成功。同时电池片上的第一电极和第二电极受热，从而进行固化，加工完成。由于焊接所需时间较短，在压针压紧焊带与电池片协助焊接完成后，压针可向上移动远离电池片和焊带。此时加热装置以以150至230摄氏度的温度，对电池片和焊带加热20至40分钟，主要对电池片上的第一电极和第二电极进行固化。
具体地，步骤S43中，加热装置包括设置在传送装置10上方的第一加热组件30和设置在传送装置10下方的第二加热组件；压针40将焊带和电池片压紧之后，打开第一加热组件30和第二加热组件，使焊带、电池片的上表面以及电池片的下表面同时加热，从而使串焊的同时，第一电极和第二电极进行固化。上述第一加热组件30包括红外加热器和热风装置，第二加热组件可以为电阻加热片加热器。
使用本发明实施例提供的加工工艺，取消加工电池片时对电极进行固化的工艺步骤，而采用在串焊电池片的同时，对电池片上的电极进行固化，节省了资源，缩短了光伏电池的加工时间，提高了生产效率。应当理解的是，在串焊完成后，还有常规的封装工艺。
如图2和图3所示，本发明实施例还提供了一种光伏电池串焊固化装置，包括传送装置10、第一加热组件30和压针40。
其中，第一加热组件30包括红外加热器和热风装置；红外加热器和热风装置均可升降的设置在传送装置10的传送面的上方；压针40可升降的设置在传送装置10的传送面的上方。优选地，上述传送装置10为传送带。
加工时，将将多个电池片间隔排列在传送装置10上，并将焊带摆放在相邻的电池片之间， 焊带的两端分别连接相邻电池片的相异电极。本领域技术人员应当理解的是，电池片排列时，应当保持适当的距离，并且排列的数量可以根据实际情况进行调整，例如：可以在传送装置10上排列2至12片电池片，相邻的电池片之间均设置有焊带，焊带的一端连接一个电池片的第二电极，焊带的另一端连接相邻电池片的第一电极。
然后使压针40和第一加热组件30向下移动靠近传送装置10的传送面，从而使得压针40将焊带及电池片压紧，避免后续焊接过程中电池片和焊带移动，造成焊接不良的现象。具体地，摆放电池片和焊带时，压针40远离传送带传送装置10，摆放完成后，将压针40移动至压接在焊带与电池片的不需要焊接的位置，从而将将焊带与电池片压紧固定。
接着，压针40将焊带和电池片压紧之后，打开红外加热器和热风装置，从而使串焊的同时，电池片的第二电极和第一电极进行固化。
本发明实施例提供的光伏电池串焊固化装置，使用压针40将焊带和电池片压紧，然后使用第一加热组件30完成电池片和焊带的串焊，以及电池片的第一电极和电池片的第二电极固化。实现了串焊和固化同时加工。节省了资源，缩短了光伏电池的加工时间，提高了生产效率。
在进行串焊和固化时，红外加热器为集中对点加热的方式，而热风装置吹出热风，对所有电池片进行全面加热，二者相互辅助，高效可靠的完成焊接和固化。
具体地，本发明实施例提供的光伏电池串焊固化装置还包括电动升降装置，其中，电动升降装置包括升降板20，升降板20设置在传送装置10的传送面上方，升降板20能向靠近或者远离传送装置10的方向移动；第一加热组件30和压针40均与升降板20固定连接。
进一步地，本发明实施例提供的光伏电池串焊固化装置还包括第二加热组件(图中未示出)，第二加热组件设置在传送装置10远离传送面的一侧。优选地，第二加热组件可以为电阻加热片，且数量为多个。也即，第一加热组件30设置在传送装置10的上方，第二加热组件设置在传送装置10的下方，从而可以对电池片和焊带的上下两侧均进行加热。
具体使用时，启动电动升降装置，使得升降板20带动压针40和第一加热组件30向上移动远离传送装置10的传送面，然后将多个电池片间隔排列在传送装置10上，并将焊带摆放在相邻的电池片之间，焊带的两端分别连接相邻电池片的相异电极。
然后，操作电动升降装置，以使升降板20向下移动，带动压针40和第一加热组件30向下移动靠近传送装置10的传送面，从而使得压针40将焊带与电池片不需要焊接的位置进行压接。
进一步地，上述电动升降装置的数量为两个，使用两个电动升降装置可以增加压针40和第一加热组件30上下移动的平稳性，以及固定可靠性，提高操作安全系数。
接着，压针40将焊带和电池片压紧之后，打开第一加热组件30和第二加热组件，使焊带、电池片的上表面以及电池片的下表面同时加热，从而使串焊的同时，电池片的第二电极和第一电极进行固化。进一步地，本发明实施例提供的光伏电池串焊固化装置还包括支撑架50，支撑架50与两升降板20固定连接；红外加热器、热风装置和压针均固定在支撑架50上，其中红外加热器具体可以为红外灯管，红外灯管的发热面朝向传送装置的传送面，热风装置可以为朝向传送装置的传送面吹出热风的风机，压针40固定在支撑架50的下侧，靠近传送装置10的一侧。请参考图3，可见支撑架50为长方体块状，其上安装有10个红外灯管。当升降板20向下移动时，压针40首先压紧电池片和焊带。
更具体地，上述升降板20为矩形板，支撑架50的一侧与矩形板的底部的一侧固定连接，升降板20远离支撑架50的一端设置有连接凸起21。
电动升降装置还包括驱动件，该驱动件的驱动端与升降板20固定连接。具体地，该驱动件为气缸，气缸的连杆与升降板20上的连接凸起21固定连接，从而控制升降板20上升和下降，以带动压针40和第一加热组件30上下移动。
进一步地，本发明实施例提供的光伏电池串焊固化装置还包括用于支撑传送装置10的支撑平台60，支撑平台60设置在传送装置10的下方；第二加热组件固定在支撑平台60靠近传送装置10的一侧。支撑平台60用于支撑传送装置10，从而使得传送装置10的传送面在运行过程中，保持平稳，避免电池片和焊带位置移动，导致串焊失败。
以上依据图式所示的实施例详细说明了本发明的构造、特征及作用效果，以上仅为本发明的较佳实施例，但本发明不以图面所示限定实施范围，凡是依照本发明的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本发明的保护范围内。

Claims (15)

  1. 一种光伏电池加工工艺，其特征在于，包括：
    步骤S1：在单晶硅片的两侧表面进行镀膜；
    步骤S2：在镀膜完成的单晶硅片的一侧表面上制备第一电极；
    步骤S3：在镀膜完成的单晶硅片的另一侧表面上制备第二电极，以形成电池片；
    步骤S4：使用光伏电池串焊固化装置，将多个所述电池片进行串焊，同时对所述第一电极和所述第二电极进行固化。
  2. 根据权利要求1所述的光伏电池加工工艺，其特征在于，步骤S1具体包括：
    步骤S11：对单晶硅片的两面进行制绒和清洗；
    步骤S12：在单晶硅片的一面依次沉积第一本征钝化层和第一非晶硅掺杂层；在单晶硅片的另一面依次沉积第二本征钝化层和第二非晶硅掺杂层；
    步骤S13：在第一非晶硅掺杂层上沉积第一透明导电层；在第二非晶硅掺杂层上沉积第二透明导电层。
  3. 根据权利要求1所述的光伏电池加工工艺，其特征在于，步骤S2具体包括：
    步骤S21：在第一透明导电层上将银和树脂的混合溶液通过丝网印刷形成第一电极；
    步骤S22：烘干所述第一电极。
  4. 根据权利要求1所述的光伏电池加工工艺，其特征在于，步骤S3具体包括：
    步骤S31：在第二透明导电层上将银和树脂的混合溶液通过丝网印刷方式进行第一次印刷，形成第二电极底层；
    步骤S32：烘干第二电极底层；
    步骤S33：在第二电极底层上将银和树脂的混合溶液通过丝网印刷方式进行第二次印刷，形成第二电极；
    步骤S34：烘干所述第二电极。
  5. 根据权利要求1所述的光伏电池加工工艺，其特征在于，步骤S4具体包括：
    步骤S41：将多个所述电池片间隔排列在传送装置上，并将焊带摆放在相邻的电池片之间，使焊带的一端与一个电池片的第一电极接触，焊带的另一端与一侧相邻的电池片的第二 电极接触；
    步骤S42：使用压针将焊带及电池片进行压紧；
    步骤S43：使用加热装置进行加热，使焊带与电池片的电极完成焊接以将多个电池片串联，同时所述第一电极和所述第二电极固化。
  6. 根据权利要求5所述的光伏电池加工工艺，其特征在于，步骤S43中，加热装置包括设置在传送装置上方的第一加热组件和设置在传送装置下方的第二加热组件；
    步骤S43具体包括：打开所述第一加热组件和所述第二加热组件，对焊带、电池片的上表面以及电池片的下表面同时加热，从而使焊带与电池片的电极完成焊接以将多个电池片串联，所述第一电极和所述第二电极固化。
  7. 根据权利要求5所述的光伏电池加工工艺，其特征在于，步骤S43还包括，控制所述加热装置以150至230摄氏度之间的温度，对电池片的第一电极和第二电极固化加热20至40分钟。
  8. 根据权利要求2所述的光伏电池加工工艺，其特征在于，步骤S12中，采用等离子体增强化学的气相沉积法或者热丝化学气相沉积方式，在单晶硅片的一面依次沉积第一本征钝化层和第一非晶硅掺杂层；在单晶硅片的另一面依次沉积第二本征钝化层和第二非晶硅掺杂层。
  9. 根据权利要求2所述的光伏电池加工工艺，其特征在于，步骤S13中，采用物理气相沉积方式，在第一非晶硅掺杂层上沉积第一透明导电层；在第二非晶硅掺杂层上沉积第二透明导电层。
  10. 一种光伏电池串焊固化装置，其特征在于，包括：
    传送装置；
    第一加热组件，包括红外加热器和热风装置；所述红外加热器和所述热风装置均可升降的设置在所述传送装置的传送面的上方；
    压针，所述压针可升降的设置在所述传送装置的传送面的上方。
  11. 根据权利要求10所述的光伏电池串焊固化装置，其特征在于，还包括支撑架，所述支撑架可升降的设置在所述传送装置的传送面上方；
    所述红外加热器、所述热风装置和所述压针均固定连接于所述支撑架上。
  12. 根据权利要求11所述的光伏电池串焊固化装置，其特征在于，还包括电动升降装置， 所述电动升降装置包括升降板，所述升降板设置在所述传送装置的传送面的上方，所述升降板能向靠近或者远离所述传送装置的方向移动；所述支撑架固定于与所述升降板上。
  13. 根据权利要求12所述的光伏电池串焊固化装置，其特征在于，所述电动升降装置还包括驱动件，所述驱动件的驱动端与所述升降板固定连接。
  14. 根据权利要求10至13中任一项所述的光伏电池串焊固化装置，其特征在于，还包括第二加热组件，所述第二加热组件设置在所述传送装置背离所述传送面的一侧。
  15. 根据权利要求14所述的光伏电池串焊固化装置，其特征在于，还包括用于支撑所述传送装置的支撑平台，所述支撑平台设置在所述传送装置的下方；所述第二加热组件固定在所述支撑平台上。
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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107968129A (zh) * 2017-12-21 2018-04-27 君泰创新（北京）科技有限公司 光伏电池加工工艺以及光伏电池串焊固化装置
JP7024464B2 (ja) * 2018-02-02 2022-02-24 浜名湖電装株式会社 電気部品製造装置および電気部品の製造方法
CN109244155A (zh) * 2018-08-03 2019-01-18 浙江爱旭太阳能科技有限公司 分片双面直连太阳能电池组件及制备方法
CN110560991A (zh) * 2019-08-01 2019-12-13 苏州金宸星锐智能科技有限公司 一种压网工装
CN110405306A (zh) * 2019-08-05 2019-11-05 无锡奥特维科技股份有限公司 施压机构、串焊机及施压方法
CN110405305A (zh) * 2019-08-05 2019-11-05 无锡奥特维科技股份有限公司 施压机构、串焊机及施压方法
CN111403559A (zh) 2020-04-13 2020-07-10 浙江晶科能源有限公司 一种光伏串焊机及光伏焊带加工方法
CN111864012B (zh) * 2020-07-15 2022-05-20 上海晶澳太阳能科技有限公司 电池串、电池组件的制造装置及制备电池组件的方法
CN111716035A (zh) * 2020-07-10 2020-09-29 无锡奥特维科技股份有限公司 焊接底板、焊接输送装置、电池串生产设备及生产方法
CN112197561A (zh) * 2020-09-25 2021-01-08 创富东日(深圳)科技有限公司 一种固化装置和烘干设备
CN112349627B (zh) * 2020-09-30 2023-09-29 金寨嘉悦新能源科技有限公司 一种太阳能单晶硅电池的电池片焊接装置
CN113399867A (zh) * 2021-05-22 2021-09-17 宣城开盛新能源科技有限公司 一种焊接机构更换铁氟龙高温布的自动化装置
CN114744078B (zh) * 2022-04-18 2024-04-30 无锡奥特维科技股份有限公司 一种电池串返修装置及返修方法
CN114725247A (zh) * 2022-04-22 2022-07-08 安徽华晟新能源科技有限公司 电极结构的制备方法及电池串的制备方法
CN115178932A (zh) * 2022-08-10 2022-10-14 江苏润达光伏无锡有限公司 光伏组件的太阳能电池片的串焊装置
CN116673645B (zh) * 2023-06-12 2023-12-12 无锡市斯威克科技有限公司 一种光伏组件焊接方法
CN117226367B (zh) * 2023-11-15 2024-01-30 山东熙源太阳能有限公司 一种太阳能板焊带焊接装置及焊接方法
CN117884747A (zh) * 2024-01-02 2024-04-16 上合中启(青岛)光伏新能源有限公司 一种光伏板电池片串焊加工设备及其焊接方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007288113A (ja) * 2006-04-20 2007-11-01 Sharp Corp 太陽電池、太陽電池ストリングおよび太陽電池モジュール
US20090007965A1 (en) * 2004-05-11 2009-01-08 Georgia Tech Research Corporation Solar cell device having amorphous silicon layers
CN103801781A (zh) * 2012-06-07 2014-05-21 康奋威科技（杭州）有限公司 应用于太阳能电池片热辐射式焊接方法及装置
CN105336817A (zh) * 2015-11-12 2016-02-17 江苏东昇光伏科技有限公司 一种晶体硅太阳能电池片串及其制备方法
CN105436730A (zh) * 2015-12-30 2016-03-30 宁夏小牛自动化设备有限公司 红外线加热焊接装置及其方法和串焊机
CN107968129A (zh) * 2017-12-21 2018-04-27 君泰创新（北京）科技有限公司 光伏电池加工工艺以及光伏电池串焊固化装置
CN207611773U (zh) * 2017-12-21 2018-07-13 君泰创新（北京）科技有限公司 光伏电池串焊固化装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6091019A (en) * 1997-09-26 2000-07-18 Sanyo Electric Co., Ltd. Photovoltaic element and manufacturing method thereof
JP5459841B2 (ja) * 2009-12-11 2014-04-02 日本アビオニクス株式会社 太陽電池モジュールの接合方法および接合装置
KR20120007385A (ko) * 2010-07-14 2012-01-20 엘지전자 주식회사 태양 전지 및 그 제조방법
CN102938432B (zh) * 2012-10-30 2016-01-20 晶澳（扬州）太阳能科技有限公司 一种mwt太阳电池组件的制备方法
CN102983223B (zh) * 2012-12-07 2015-07-08 天津英利新能源有限公司 光伏组件的生产工艺和生产设备
JP6697456B2 (ja) * 2015-06-17 2020-05-20 株式会社カネカ 結晶シリコン太陽電池モジュールおよびその製造方法
CN206116415U (zh) * 2016-08-26 2017-04-19 泰州中来光电科技有限公司 一种太阳能电池串及其组件和系统

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090007965A1 (en) * 2004-05-11 2009-01-08 Georgia Tech Research Corporation Solar cell device having amorphous silicon layers
JP2007288113A (ja) * 2006-04-20 2007-11-01 Sharp Corp 太陽電池、太陽電池ストリングおよび太陽電池モジュール
CN103801781A (zh) * 2012-06-07 2014-05-21 康奋威科技（杭州）有限公司 应用于太阳能电池片热辐射式焊接方法及装置
CN105336817A (zh) * 2015-11-12 2016-02-17 江苏东昇光伏科技有限公司 一种晶体硅太阳能电池片串及其制备方法
CN105436730A (zh) * 2015-12-30 2016-03-30 宁夏小牛自动化设备有限公司 红外线加热焊接装置及其方法和串焊机
CN107968129A (zh) * 2017-12-21 2018-04-27 君泰创新（北京）科技有限公司 光伏电池加工工艺以及光伏电池串焊固化装置
CN207611773U (zh) * 2017-12-21 2018-07-13 君泰创新（北京）科技有限公司 光伏电池串焊固化装置

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