WO2019114201A1 - Dispositif semi-conducteur de puissance au carbure de silicium ayant une faible résistance à l'état passant - Google Patents
Dispositif semi-conducteur de puissance au carbure de silicium ayant une faible résistance à l'état passant Download PDFInfo
- Publication number
- WO2019114201A1 WO2019114201A1 PCT/CN2018/088785 CN2018088785W WO2019114201A1 WO 2019114201 A1 WO2019114201 A1 WO 2019114201A1 CN 2018088785 W CN2018088785 W CN 2018088785W WO 2019114201 A1 WO2019114201 A1 WO 2019114201A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type
- region
- power semiconductor
- silicon carbide
- semiconductor device
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 229920005591 polysilicon Polymers 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 108091006146 Channels Proteins 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
L'invention concerne un dispositif semi-conducteur de puissance au carbure de silicium ayant une faible résistance à l'état passant. Le dispositif semi-conducteur de puissance est une structure axisymétrique et comprend : un substrat de type N (1), une région de dérive de type N (2) étant disposée sur le substrat de type N, et une paire de régions de base de type P (3) est disposée symétriquement dans la région de dérive de type N, une région de contact de corps de type P+ (4) et une région source de type N+ (5) se trouvant dans la région de base de type P; une couche d'oxyde de grille (7) étant disposée sur une surface de la région de dérive de type N, et une grille en polysilicium (8) est disposée sur une surface de la couche d'oxyde de grille; un réseau formé par des régions de type N (11) est disposé à l'intérieur des régions de base de type P, une surface supérieure étant séparée de la couche d'oxyde de grille; les régions de type N et les régions de base de type P sont réparties à des intervalles dans la direction de la largeur de la grille du dispositif, et la distance entre les régions de type N et la couche d'oxyde de grille, l'épaisseur et la concentration de dopage amènent les régions de type N à être réduites à l'état naturel. Tout en maintenant la tension de claquage du dispositif, la résistance à l'état passant du dispositif est abaissée, les capacités de courant à l'état passant du dispositif sont améliorées et la perte d'énergie à l'état passant est réduite.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711343954.2A CN108231898B (zh) | 2017-12-14 | 2017-12-14 | 一种低导通电阻的碳化硅功率半导体器件 |
| CN201711343954.2 | 2017-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2019114201A1 true WO2019114201A1 (fr) | 2019-06-20 |
Family
ID=62652322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2018/088785 WO2019114201A1 (fr) | 2017-12-14 | 2018-05-29 | Dispositif semi-conducteur de puissance au carbure de silicium ayant une faible résistance à l'état passant |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108231898B (fr) |
| WO (1) | WO2019114201A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109686332B (zh) * | 2019-01-24 | 2021-04-30 | 合肥鑫晟光电科技有限公司 | 补偿模块及逻辑门电路、栅极驱动电路和显示装置 |
| CN110797263A (zh) * | 2019-11-14 | 2020-02-14 | 龙腾半导体有限公司 | 功率mosfet器件及其制造方法 |
| CN112164725B (zh) * | 2020-09-27 | 2022-04-05 | 东南大学 | 一种高阈值的功率半导体器件及其制造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097479A (zh) * | 2010-12-19 | 2011-06-15 | 电子科技大学 | 一种低压埋沟vdmos器件 |
| CN103762230A (zh) * | 2014-01-24 | 2014-04-30 | 东南大学 | N沟道注入效率增强型绝缘栅双极型晶体管 |
| CN104600121A (zh) * | 2015-01-15 | 2015-05-06 | 东南大学 | 一种高可靠性p型碳化硅纵向金属氧化物半导体管 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6956238B2 (en) * | 2000-10-03 | 2005-10-18 | Cree, Inc. | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
| US8053809B2 (en) * | 2009-05-26 | 2011-11-08 | International Business Machines Corporation | Device including high-K metal gate finfet and resistive structure and method of forming thereof |
| JP6523887B2 (ja) * | 2015-09-11 | 2019-06-05 | 株式会社東芝 | 半導体装置 |
| CN106409915A (zh) * | 2016-11-25 | 2017-02-15 | 东莞市联洲知识产权运营管理有限公司 | 一种垂直双扩散金属氧化物半导体场效应晶体管 |
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2017
- 2017-12-14 CN CN201711343954.2A patent/CN108231898B/zh active Active
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2018
- 2018-05-29 WO PCT/CN2018/088785 patent/WO2019114201A1/fr active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097479A (zh) * | 2010-12-19 | 2011-06-15 | 电子科技大学 | 一种低压埋沟vdmos器件 |
| CN103762230A (zh) * | 2014-01-24 | 2014-04-30 | 东南大学 | N沟道注入效率增强型绝缘栅双极型晶体管 |
| CN104600121A (zh) * | 2015-01-15 | 2015-05-06 | 东南大学 | 一种高可靠性p型碳化硅纵向金属氧化物半导体管 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108231898A (zh) | 2018-06-29 |
| CN108231898B (zh) | 2021-07-13 |
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