WO2019114009A1 - 一种透光太阳能电池及其制备方法 - Google Patents

一种透光太阳能电池及其制备方法 Download PDF

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WO2019114009A1
WO2019114009A1 PCT/CN2017/117413 CN2017117413W WO2019114009A1 WO 2019114009 A1 WO2019114009 A1 WO 2019114009A1 CN 2017117413 W CN2017117413 W CN 2017117413W WO 2019114009 A1 WO2019114009 A1 WO 2019114009A1
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electrode
electrodes
light absorbing
light
layer
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PCT/CN2017/117413
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English (en)
French (fr)
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张学良
林俊荣
齐维滨
李新宇
王宏
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北京铂阳顶荣光伏科技有限公司
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Priority to KR1020187034934A priority Critical patent/KR20190072495A/ko
Priority to EP17905902.7A priority patent/EP3525242A4/en
Priority to AU2017409832A priority patent/AU2017409832A1/en
Publication of WO2019114009A1 publication Critical patent/WO2019114009A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of photovoltaic cell processing, in particular to a light-transmitting solar cell and a preparation method thereof.
  • CIGS Small thin film battery CuInxGa(1-x)Se 2 abbreviated, mainly composed of Cu (copper), In (indium), Ga (gallium), Se (selenium)] photovoltaic cells with high power generation efficiency, mature production process, One of the current mainstream photovoltaic cells. It mainly uses glass as a substrate, and is coated with a Mo (molybdenum) layer, a CIGS layer, a CdS (cadmium sulfide) layer, a transparent conductive oxide thin film layer TCO (Transparent Conductive Oxide) layer, and a TCO layer as a light receiving surface.
  • Mo molybdenum
  • CdS cadmium sulfide
  • TCO Transparent Conductive Oxide
  • Photovoltaic cells are now used not only for power generation but also for glass curtain walls. When making a glass curtain wall, you must consider not only the power generation needs, but also the aesthetic and light transmission requirements.
  • the existing CIGS photovoltaic cells are generally black, and there is no way to transmit light, which cannot meet the actual needs.
  • the object of the present invention is to provide a light-transmitting solar cell and a preparation method thereof, which solve the problems in the prior art and make the battery transparent to meet actual needs.
  • the invention provides a light transmissive solar cell, the light transmissive solar cell comprising:
  • each light absorbing module is in one-to-one correspondence with each of the first electrodes, and a first end of each of the light absorbing modules is opposite to the corresponding first electrode
  • One end extends a set length to form a conductive connection end; the light absorbing module covers a region of the corresponding first electrode except the conductive connection end; and the interval is disposed in the plurality of the light absorbing portions
  • the set length is greater than 0 microns and less than or equal to 100 microns.
  • the spacing between adjacent two second electrodes is above the first electrode.
  • the spacing of said adjacent two second electrodes extends downwardly through the light absorbing module above said first electrode and to the upper surface of said first electrode.
  • the opening between the adjacent two light absorbing modules coincides with the opening portion between the adjacent two first electrodes.
  • the substrate comprises a substrate glass
  • the first electrode comprises a layer of molybdenum
  • the light absorbing module comprises a layer of CIGS and a layer of cadmium sulfide
  • the second electrode comprises a layer of TCO.
  • the present invention also provides a method for preparing a light-transmitting solar cell, the preparation method comprising:
  • the light absorbing layer Separating the light absorbing layer into a plurality of light absorbing modules corresponding to the respective first electrodes, and forming the light absorbing module to cover a region of the corresponding first electrode except the conductive connection end;
  • the second electrode layer is divided into a plurality of spaced second electrodes.
  • the light absorbing layer is divided into a plurality of light absorbing modules that are in one-to-one correspondence with the respective first electrodes, and the formed light absorbing module covers a region other than the conductive connecting end of the corresponding first electrode.
  • the light absorbing layer is divided into a plurality of light absorbing modules that are in one-to-one correspondence with the respective first electrodes, and the formed light absorbing module covers a region other than the conductive connecting end of the corresponding first electrode. Specifically, including:
  • Separating the light absorbing layer at a position corresponding to an interval between the plurality of first electrodes, and the portion of the divided light absorbing layer corresponding to each of the first electrodes includes: being located on the corresponding first electrode a first portion and a second portion of the first side of the first electrode corresponding to the package, wherein the first side is an opposite side of the side of the first electrode on which the conductive connection end is provided;
  • Removing the light absorbing layer on the conductive connection end of each of the first electrodes forms a light absorbing module.
  • the separation is achieved by laser or etched etch.
  • the substrate comprises a substrate glass
  • the first electrode comprises a layer of molybdenum
  • the light absorbing module comprises a layer of CIGS and a layer of cadmium sulfide
  • the second electrode comprises a layer of TCO.
  • the light-transmitting solar cell and the preparation method thereof are provided, wherein a plurality of first electrodes, a plurality of light absorbing modules, and a plurality of second electrodes are spaced apart from each other on the substrate, and the divided regions of the first electrode and the light absorbing module are filled
  • the second electrode of the light so that the light can pass through the second electrode of the divided region, and the substrate, so that the solar cell of the present invention has a light transmitting function, thereby satisfying practical requirements such as light transmission.
  • FIG. 1 is a schematic structural diagram of a preparation process of a light-transmitting solar cell according to an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of a preparation process of a light-transmitting solar cell according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a preparation process of a light-transmitting solar cell according to an embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of a preparation process of a light-transmitting solar cell according to an embodiment of the present invention
  • FIG. 5 is a schematic structural diagram of a preparation process of a light-transmitting solar cell according to an embodiment of the present invention
  • FIG. 6 is a schematic structural diagram of a preparation process of a light-transmitting solar cell according to an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of a light-transmitting solar cell according to an embodiment of the present invention.
  • FIG. 8 is a schematic flow chart of a method for preparing a light-transmitting solar cell according to an embodiment of the present invention.
  • an embodiment of the present invention provides a light-transmissive solar cell
  • the light-transmissive solar cell includes: a substrate 1;
  • each light absorbing module 3 is in one-to-one correspondence with each of the first electrodes 2, and the first end of each light absorbing module 3 corresponds to the
  • the first end of the first electrode 2 extends a set length to form a conductive connection end 23; the light absorbing module 3 covers a region of the corresponding first electrode 2 except the conductive connection end 23; a plurality of light transmissive second electrodes 4 on the light absorbing module 3 and filled between adjacent two first electrodes 2 and two adjacent light absorbing modules 3, each of the second electrodes 4 and each first The electrodes 2 correspond one to one.
  • the first end 21 is the left edge of the first electrode 2
  • the second end 22 is the right edge
  • the conductive connection end 23 is disposed above the first end 21 of the first electrode 2 , That is, the light absorbing module 3 above the left edge of the first electrode 2 is completely removed to form a conductive connection end 23, and preferably, the set length is greater than 0 micrometers and less than or equal to 100 micrometers, since the conductive connection terminal 23 is filled with the second electrode.
  • the lower first electrode 2 is in contact with the second electrode 4 on the left side, and so on, so that each power generation area (including the corresponding first electrode 2 and second electrode 4) Connected together; the light absorbing module 3 encloses the second end 22 of the corresponding first electrode 2, that is, the right edge of the first electrode 2, and the upper surface, so that the light absorbing module 3 corresponds to the first
  • the one electrode 2 and the second electrode 4 are isolated to prevent the first electrode 2 from being in contact with the corresponding second electrode 4 to cause a short circuit.
  • the opening between the adjacent two light absorbing modules 3 coincides with the opening portion between the adjacent two first electrodes 2.
  • the openings are the openings at the intervals, and the two openings are partially overlapped, so that the respective first electrodes 2 can be in one-to-one correspondence with the light absorbing modules 3, and the respective power generating regions are connected in series, and the right edge of the light absorbing module 3 is formed.
  • the distance from the left edge of the first electrode 2 on the right side is generally set to 5 mm. It is known to those skilled in the art that the distance is not specifically limited and is flexibly set according to actual needs.
  • the light-transmitting solar cell provided by the present invention has a plurality of first electrodes 2, a plurality of light absorbing modules 3, and a plurality of second electrodes 4 spaced apart from each other on the substrate 1, in the divided regions of the first electrode 2 and the light absorbing module 3. Filling the light-transmissive second electrode 4 such that light can pass through the second electrode 4 of the divided region, and the substrate 1, that is, between adjacent two first electrodes 2, between two adjacent light absorbing modules 3, A light-transmitting region is formed at the conductive connection end 23, thereby making the solar cell of the present invention It has a light transmission function to meet the actual needs of light transmission.
  • the interval between two adjacent second electrodes 4 is located above the first electrode 2.
  • the spacing of the adjacent two second electrodes 4 extends downwardly through the light absorbing module 3 above the first electrode 2 and to the upper surface of the first electrode 2. In this way, the isolation between the second electrodes 4 is ensured, and the practical operation is also considered, that is, the light absorbing module 3 and the second electrode 4 above the portion of the first electrode 2 are all removed, and the interval can be formed. At the office.
  • the substrate 1 comprises a substrate glass
  • the first electrode 2 comprises a layer of molybdenum
  • the light absorbing module 3 comprises a layer of CIGS and a layer of cadmium sulfide
  • the second electrode 4 comprises a layer of TCO.
  • another embodiment of the present invention further provides a method for preparing a light-transmitting solar cell, the preparation method comprising:
  • Step S801 forming a first electrode layer 5 on the substrate 1;
  • Step S802 dividing the first electrode layer 5 into a plurality of first electrodes 2 spaced apart;
  • Step S803 forming a light absorbing layer 6 on the first electrode 2; the light absorbing layer 6 may be formed by plating.
  • Step S804 The light absorbing layer 6 is divided into a plurality of light absorbing modules 3 corresponding to the first electrodes 2, and the formed light absorbing module 3 covers the corresponding first electrode 2 except the conductive connection end. An area other than 23;
  • Step S805 forming a light transmissive second electrode layer 7 on the light absorbing module 3, between two adjacent first electrodes 2, and between two adjacent light absorbing modules 3;
  • Step S806 The second electrode layer 7 is divided into a plurality of spaced second electrodes 4.
  • the light absorbing layer 6 is divided into a plurality of light absorbing modules 3 corresponding to the respective first electrodes 2, and the formed light absorbing module 3 covers the corresponding first electrodes.
  • the conductive connection end 23 specifically includes:
  • the light absorbing layer 6 is divided at a position corresponding to the interval between the plurality of first electrodes 2, and the portion of the divided light absorbing layer 6 corresponding to each of the first electrodes 2 includes: a first portion on an electrode 2 and a second portion enclosing a first side of the corresponding first electrode 2, the first side being an opposite side of the first electrode 2 on a side where the conductive connection end 23 is provided;
  • the light absorbing layer 6 on the conductive connection end 23 of each of the first electrodes 2 is removed to form the light absorbing module 3.
  • the separation is achieved by laser or etched etch.
  • Etching knife etching generally refers to operation by mechanical means such as a doctor blade to achieve removal of each film layer.
  • the substrate 1 comprises a substrate glass
  • the first electrode 2 comprises a molybdenum layer
  • the light absorbing module 3 comprises a CIGS solar thin film battery layer and a cadmium sulfide layer
  • the second electrode 4 comprises a TCO transparent conductive oxide Floor.
  • the second electrode 4 may also be an ITO indium tin oxide semiconductor transparent conductive film layer.
  • the portion between the two first electrodes 2 and the portion between the two light absorbing modules 3 are removed, that is, separated, in order to leave a light-transmitting region, and the second electrode 4 is filled in preparation;
  • the light absorbing module 3 above the first end 21 of the first electrode 2 is for forming the conductive connection end 23, that is, forming a molybdenum layer as a connection point between the power generation regions; and the first side of the first electrode 2 That is, the upper and right edges of the position of the second end 22 of the first electrode 2.
  • the TCO layer is excellent in light transmittance and conductivity, and therefore, it is selected as the second electrode 4.
  • the solar cell prepared by the method for preparing a light-transmitting solar cell provided by the invention has a light-transmitting function, thereby satisfying practical requirements such as light transmission and power generation, and the process is simple and convenient, and the cost is low.

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Abstract

一种透光太阳能电池及其制备方法，透光太阳能电池包括基板（1）；多个第一电极（2）；多个光吸收模块（3），各个光吸收模块（3）与各个第一电极（2）一一对应，且每个光吸收模块（3）的第一端（21）相对对应的第一电极（2）的第一端（21）延伸出设定长度以形成导电连接端（23）；光吸收模块（3）包覆对应的第一电极（2）除导电连接端（23）以外的区域；间隔的设置在多个光吸收模块（3）上且填充在相邻两个第一电极（2）、相邻两个光吸收模块（3）之间的多个透光的第二电极（4），各个第二电极（4）与各个第一电极（2）一一对应。通过在基板（1）上间隔设置多个第一电极（2）、多个光吸收模块（3）、多个第二电极（4），在第一电极（2）及光吸收模块（3）的分割区域填充透光的第二电极（4），从而使得光线可穿过分割区域的第二电极（4）、以及基板（1），使得太阳能电池具备透光功能。

Description

一种透光太阳能电池及其制备方法 技术领域
本发明涉及光伏电池加工领域，尤其涉及一种透光太阳能电池及其制备方法。
背景技术
CIGS[太阳能薄膜电池CuInxGa(1-x)Se2的简写，主要组成有Cu(铜)、In(铟)、Ga(镓)、Se(硒)]光伏电池发电效率高，制作工艺成熟，是目前主流的光伏电池之一。它主要以玻璃为基板，在玻璃上镀Mo(钼)层、CIGS层、CdS(硫化镉)层、透明的导电氧化物薄膜层TCO(Transparent Conductive Oxide)层，TCO层为受光面。
现在光伏电池不仅用来做电站发电，还有做成玻璃幕墙的需求。在做玻璃幕墙的时候不仅要考虑发电需求，还要考虑美观和透光的需求。
现有CIGS光伏电池一般是黑色的，没有办法透光，无法满足实际需求。
发明内容
本发明的目的是提供一种透光太阳能电池及其制备方法，以解决现有技术中的问题，使电池透光，满足实际需求。
一方面，本发明提供了一种透光太阳能电池，所述透光太阳能电池包括：
基板；
间隔的设置在所述基板上的多个第一电极；
间隔的设置在所述第一电极上的多个光吸收模块，各个光吸收模块与各个第一电极一一对应，且每个光吸收模块的第一端相对对应的所述第一电极的第一端延伸出设定长度以形成导电连接端；所述光吸收模块包覆对应的第一电极除所述导电连接端以外的区域；间隔的设置在多个所述光吸 收模块上且填充在相邻两个第一电极、相邻两个光吸收模块之间的多个透光的第二电极，各个第二电极与各个第一电极一一对应。
作为优选，所述设定长度大于0微米且小于等于100微米。
作为优选，相邻两个第二电极的间隔处位于第一电极上方。
作为优选，所述相邻两个第二电极的间隔处向下延伸，穿过所述第一电极上方的光吸收模块并延伸至所述第一电极的上表面。
作为优选，相邻两个光吸收模块之间的开口与相邻两个第一电极之间的开口部分重合。
作为优选，所述基板包括基板玻璃，所述第一电极包括钼层，所述光吸收模块包括CIGS层与硫化镉层，所述第二电极包括TCO层。
另一方面，本发明还提供一种透光太阳能电池的制备方法，所述制备方法包括：
在基板上形成第一电极层；
将所述第一电极层分隔成多个间隔分布的第一电极；
在所述第一电极上形成光吸收层；
将所述光吸收层分隔成与各个第一电极一一对应的多个光吸收模块，且形成的所述光吸收模块包覆对应的第一电极除导电连接端以外的区域；
在所述光吸收模块上、相邻两个第一电极、相邻两个光吸收模块之间形成透光的第二电极层；
将所述第二电极层分隔成多个间隔的第二电极。
作为优选，所述将所述光吸收层分隔成与各个第一电极一一对应的多个光吸收模块，且形成的所述光吸收模块包覆对应的第一电极除导电连接端以外的区域，具体包括：
将所述光吸收层在与多个第一电极之间的间隔对应的位置处分割开，且分割开的光吸收层与每个第一电极对应的部分包括：位于对应的第一电极上的第一部分以及包裹对应的第一电极的第一侧的第二部分，所述第一侧为第一电极设有导电连接端一侧的相对侧；
去除每个第一电极的导电连接端上的光吸收层形成光吸收模块。
作为优选，所述分隔是通过激光或刻蚀刀刻蚀的方法实现。
作为优选，所述基板包括基板玻璃，所述第一电极包括钼层，所述光吸收模块包括CIGS层与硫化镉层，所述第二电极包括TCO层。
本发明提供的透光太阳能电池及其制备方法，通过在基板上间隔设置多个第一电极、多个光吸收模块、多个第二电极，在第一电极及光吸收模块的分割区域填充透光的第二电极，从而使得光线可穿过分割区域的第二电极、以及基板，从而使得本发明的太阳能电池具备透光功能，进而满足透光等实际需求。
附图说明
图1为本发明实施例提供的透光太阳能电池制备过程的结构示意图；
图2为本发明实施例提供的透光太阳能电池制备过程的结构示意图；
图3为本发明实施例提供的透光太阳能电池制备过程的结构示意图；
图4为本发明实施例提供的透光太阳能电池制备过程的结构示意图；
图5为本发明实施例提供的透光太阳能电池制备过程的结构示意图；
图6为本发明实施例提供的透光太阳能电池制备过程的结构示意图；
图7为本发明实施例提供的透光太阳能电池的结构示意图；
图8为本发明实施例提供的透光太阳能电池的制备方法流程示意图。
附图标记说明：
1-基板，2-第一电极，21-第一端，22-第二端，23-导电连接端，3-光吸收模块，4-第二电极，5-第一电极层，6-光吸收层，7-第二电极层。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。
实施例一
如图7所示，本发明实施例提供了一种透光太阳能电池，所述透光太阳能电池包括：基板1；
间隔的设置在所述基板1上的多个第一电极2；
间隔的设置在所述第一电极2上的多个光吸收模块3，各个光吸收模块3与各个第一电极2一一对应，且每个光吸收模块3的第一端相对应的所述第一电极2的第一端延伸出设定长度以形成导电连接端23；所述光吸收模块3包覆对应的第一电极2除所述导电连接端23以外的区域；间隔的设置在多个所述光吸收模块3上且填充在相邻两个第一电极2、相邻两个光吸收模块3之间的多个透光的第二电极4，各个第二电极4与各个第一电极2一一对应。
如图7所示，第一端21即为第一电极2的左侧边缘，而第二端22则为右侧边缘；在第一电极2的第一端21上方设置有导电连接端23，即将第一电极2左侧边缘上方的光吸收模块3全部去掉，形成导电连接端23，作为优选，设定长度大于0微米且小于等于100微米，由于该导电连接端23内填充了第二电极4，通过该导电连接端23，使得下方的第一电极2与左侧的第二电极4接触导通，以此类推，使得各个发电区域(包括相对应的第一电极2和第二电极4)串连在一起；光吸收模块3包覆对应的第一电极2的第二端22，即第一电极2的右侧边缘，以及上表面，目的在于使得光吸收模块3对相对应的第一电极2和第二电极4进行隔离，防止第一电极2与对应的第二电极4接触导通而产生短路。
作为优选，相邻两个光吸收模块3之间的开口与相邻两个第一电极2之间的开口部分重合。所述的开口即为间隔处的开口，两个开口部分重合，目的在于使得各个第一电极2与光吸收模块3能够一一对应，各个发电区域形成串联，而光吸收模块3的右侧边缘距离其右侧的第一电极2的左侧边缘的距离一般设置为5mm，本领域技术人员可知，该距离不做具体限定，根据实际需要灵活设置。
本发明提供的透光太阳能电池，通过在基板1上间隔设置多个第一电极2、多个光吸收模块3、多个第二电极4，在第一电极2及光吸收模块3的分割区域填充透光的第二电极4，从而使得光线可穿过分割区域的第二电极4、以及基板1，即相邻两个第一电极2之间、相邻两个光吸收模块3之间、所述导电连接端23处形成透光区域，从而使得本发明的太阳能电池 具备透光功能，进而满足透光等实际需求。
作为优选，相邻两个第二电极4的间隔处位于第一电极2上方。作为优选，所述相邻两个第二电极4的间隔处向下延伸，穿过所述第一电极2上方的光吸收模块3并延伸至所述第一电极2的上表面。如此设置，保证各个第二电极4之间隔离，同时还考虑实际操作方便，即将第一电极2的一部分的上方的光吸收模块3、第二电极4全部除掉，即可形成所述的间隔处。
作为优选，所述基板1包括基板玻璃，所述第一电极2包括钼层，所述光吸收模块3包括CIGS层与硫化镉层，所述第二电极4包括TCO层。
实施例二
如图8所示，也可参见图1-7，本发明另一实施例还提供一种透光太阳能电池的制备方法，所述制备方法包括：
步骤S801：在基板1上形成第一电极层5；
步骤S802：将所述第一电极层5分隔成多个间隔分布的第一电极2；
步骤S803：在所述第一电极2上形成光吸收层6；光吸收层6可以采用镀膜的方式形成。
步骤S804：将所述光吸收层6分隔成与各个第一电极2一一对应的多个光吸收模块3，且形成的所述光吸收模块3包覆对应的第一电极2除导电连接端23以外的区域；
步骤S805：在所述光吸收模块3上、相邻两个第一电极2之间、相邻两个光吸收模块3之间形成透光的第二电极层7；
步骤S806：将所述第二电极层7分隔成多个间隔的第二电极4。
作为优选，步骤S804：所述将所述光吸收层6分隔成与各个第一电极2一一对应的多个光吸收模块3，且形成的所述光吸收模块3包覆对应的第一电极2除导电连接端23以外的区域，具体包括：
将所述光吸收层6在与多个第一电极2之间的间隔对应的位置处分割开，且分割开的光吸收层6与每个第一电极2对应的部分包括：位于对应的第一电极2上的第一部分以及包裹对应的第一电极2的第一侧的第二部分，所述第一侧为第一电极2设有导电连接端23一侧的相对侧；
去除每个第一电极2的导电连接端23上的光吸收层6形成光吸收模块3。
作为优选，所述分隔是通过激光或刻蚀刀刻蚀的方法实现。刻蚀刀刻蚀一般指通过刮刀等机械手段进行操作，实现各个膜层的去除。
作为优选，所述基板1包括基板玻璃，所述第一电极2包括钼层，所述光吸收模块3包括CIGS太阳能薄膜电池层与硫化镉层，所述第二电极4包括TCO透明导电氧化物层。可选的，上述第二电极4也可以为ITO铟锡氧化物半导体透明导电膜层。
其中，将两个第一电极2之间的部分、两个光吸收模块3之间的部分均除去，即进行分隔，是为了留出透光区域，填充第二电极4做准备；而去除每个第一电极2上的第一端21上方的光吸收模块3，是为了形成导电连接端23，即形成留钼层作为发电区域之间串联的连接点；而第一电极2的第一侧即为第一电极2的第二端22的位置的上部及右侧边缘。而TCO层透光性与导电性均较好，因此，选用作为第二电极4。
通过本发明提供的透光太阳能电池制备方法制备的太阳能电池，具备透光功能，进而满足透光、发电等实际需求，工艺简单方便，成本较低。
以上依据图式所示的实施例详细说明了本发明的构造、特征及作用效果，以上所述仅为本发明的较佳实施例，但本发明不以图面所示限定实施范围，凡是依照本发明的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本发明的保护范围内。

Claims (10)

  1. 一种透光太阳能电池，其特征在于，所述透光太阳能电池包括：
    基板；
    间隔的设置在所述基板上的多个第一电极；
    间隔的设置在所述第一电极上的多个光吸收模块，各个光吸收模块与各个第一电极一一对应，且每个光吸收模块的第一端相对对应的所述第一电极的第一端延伸出设定长度以形成导电连接端；所述光吸收模块包覆对应的第一电极除所述导电连接端以外的区域；
    间隔的设置在多个所述光吸收模块上且填充在相邻两个第一电极、相邻两个光吸收模块之间的多个透光的第二电极，各个第二电极与各个第一电极一一对应。
  2. 根据权利要求1所述的透光太阳能电池，其特征在于，所述设定长度大于0微米且小于等于100微米。
  3. 根据权利要求1所述的透光太阳能电池，其特征在于，相邻两个第二电极的间隔处位于第一电极上方。
  4. 根据权利要求3所述的透光太阳能电池，其特征在于，所述相邻两个第二电极的间隔处向下延伸，穿过所述第一电极上方的光吸收模块并延伸至所述第一电极的上表面。
  5. 根据权利要求1所述的透光太阳能电池，其特征在于，相邻两个光吸收模块之间的开口与相邻两个第一电极之间的开口部分重合。
  6. 根据权利要求1所述的透光太阳能电池，其特征在于，所述基板包括基板玻璃，所述第一电极包括钼层，所述光吸收模块包括CIGS层与硫化镉层，所述第二电极包括TCO层。
  7. 一种透光太阳能电池的制备方法，其特征在于，所述制备方法包括：
    在基板上形成第一电极层；
    将所述第一电极层分隔成多个间隔分布的第一电极；
    在所述第一电极上形成光吸收层；
    将所述光吸收层分隔成与各个第一电极一一对应的多个光吸收模块，且形成的所述光吸收模块包覆对应的第一电极除导电连接端以外的区域；
    在所述光吸收模块上、相邻两个第一电极、相邻两个光吸收模块之间形成透光的第二电极层；
    将所述第二电极层分隔成多个间隔的第二电极。
  8. 根据权利要求7所述的制备方法，其特征在于，所述将所述光吸收层分隔成与各个第一电极一一对应的多个光吸收模块，且形成的所述光吸收模块包覆对应的第一电极除导电连接端以外的区域，具体包括：
    将所述光吸收层在与多个第一电极之间的间隔对应的位置处分割开，且分割开的光吸收层与每个第一电极对应的部分包括：位于对应的第一电极上的第一部分以及包裹对应的第一电极的第一侧的第二部分，所述第一侧为第一电极设有导电连接端一侧的相对侧；
    去除每个第一电极的导电连接端上的光吸收层形成光吸收模块。
  9. 根据权利要求7所述的制备方法，其特征在于，所述分隔通过激光或刻蚀刀刻蚀的方法实现。
  10. 根据权利要求7所述的制备方法，其特征在于，所述基板包括基板玻璃，所述第一电极包括钼层，所述光吸收模块包括CIGS层与硫化镉层，所述第二电极包括TCO层。
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