WO2019100423A1 - 一种液晶显示面板以及液晶显示装置 - Google Patents

一种液晶显示面板以及液晶显示装置 Download PDF

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WO2019100423A1
WO2019100423A1 PCT/CN2017/113529 CN2017113529W WO2019100423A1 WO 2019100423 A1 WO2019100423 A1 WO 2019100423A1 CN 2017113529 W CN2017113529 W CN 2017113529W WO 2019100423 A1 WO2019100423 A1 WO 2019100423A1
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layer
disposed
substrate
liquid crystal
crystal display
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French (fr)
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廖作敏
邬金芳
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers

Definitions

  • the present invention relates to the field of display, and in particular to a liquid crystal display panel and a liquid crystal display device.
  • the liquid crystal display Due to the mature process and low cost, the liquid crystal display (LCD) can realize the advantages of high pixel density (PPI) and narrow bezel, and has great market competitive advantage.
  • the market demand display panel is now extremely thin and the frame is extremely narrow. At present, the thickness is extremely thinned mainly by thinning the glass and thinning the module layer.
  • the narrowing of the frame is mainly through integrated gate drive (COA) or chip on film (COF) on the substrate. ) and other integrated technologies to achieve.
  • COA integrated gate drive
  • COF chip on film
  • the structure of the liquid crystal display panel is usually a CF film, an array of TFTs, and a backlight are disposed under the array substrate, and a single layer of COF is used.
  • Structure such a design is advantageous for the frame to be extremely narrow but the module thickness is large; in another case, a double-layer COF structure can be used, which is advantageous for the frame to be extremely narrow and the module thickness is extremely thin, but High cost and complicated process, not suitable for mass production.
  • the technical problem to be solved by the present invention is to provide a liquid crystal display panel and a liquid crystal display device, wherein the backlight module is disposed outside the CF substrate, and a light shielding layer is disposed in the TFT substrate, thereby reducing the thickness and the frame of the liquid crystal display panel.
  • the width is simple and the cost is low.
  • an aspect of an embodiment of the present invention provides a liquid crystal display surface a board comprising a TFT substrate, a CF substrate, and a liquid crystal layer intermediate the TFT substrate and the CF substrate, wherein:
  • At least a base substrate, a thin film transistor layer, and a pixel electrode layer are disposed on the TFT substrate, and a light shielding layer for shielding each thin film transistor is disposed between the base substrate of the TFT substrate and the thin film transistor layer
  • a color filter layer is disposed on the CF substrate.
  • the thin film transistor layer includes at least an active layer, a gate, a source, and a drain; the light shielding layer is disposed between the substrate and the active layer, facing and covering the gate , source, and drain.
  • the light shielding layer comprises:
  • a first light shielding layer disposed between the base substrate and the active layer, facing and covering the drain;
  • a second light shielding layer disposed between the base substrate and the active layer, facing and covering the source;
  • the third light shielding layer is disposed on the upper side of the gate, facing and covering the gate.
  • the light shielding layer is made of a low reflection material.
  • the TFT substrate includes:
  • the base substrate
  • a first insulating layer attached to the lower surface of the substrate
  • the active layer is disposed on a lower surface of the first insulating layer
  • a second insulating layer disposed on a lower surface of the active layer
  • the gate is disposed on a lower surface of the second insulating layer
  • a third insulating layer disposed on the lower surface of the gate
  • the source is disposed on a lower surface of the third insulating layer and connected to the active layer through the third insulating layer;
  • the drain is disposed on a lower surface of the third insulating layer and connected to the active layer through the third insulating layer;
  • a flat layer disposed on a lower surface of the third insulating layer and covering the source and the drain, and a source hole is disposed on the flat layer;
  • a common electrode layer disposed on a lower surface of the flat layer
  • a passivation layer disposed on the lower surface of the common electrode layer; the source hole passing through the common electrode layer and the passivation layer;
  • a pixel electrode layer is disposed on a lower surface of the passivation layer, and is connected to the source through an inner surface of the source hole.
  • the CF substrate comprises:
  • a color filter layer disposed on the base substrate and the black matrix layer
  • a protective layer is disposed on the color filter layer.
  • the embodiment of the present invention further provides a liquid crystal display device including at least one liquid crystal cell and a backlight module, wherein the liquid crystal cell includes a TFT substrate, a CF substrate, and the TFT substrate and the CF substrate disposed opposite to each other. a liquid crystal layer in the middle, the backlight module is located outside the CF substrate of the liquid crystal cell;
  • At least a base substrate, a thin film transistor layer, and a pixel electrode layer are disposed on the TFT substrate, and a light shielding layer for shielding each thin film transistor is disposed between the base substrate of the TFT substrate and the thin film transistor layer
  • a color filter layer is disposed on the CF substrate.
  • the thin film transistor layer includes at least an active layer, a gate, a source, and a drain; the light shielding layer is disposed between the substrate and the active layer, facing and covering the gate , source, and drain.
  • the light shielding layer comprises:
  • a first light shielding layer disposed between the base substrate and the active layer, facing and covering the drain;
  • a second light shielding layer disposed between the base substrate and the active layer, facing and covering the source;
  • the third light shielding layer is disposed on the upper side of the gate, facing and covering the gate.
  • the light shielding layer is made of a low reflection material.
  • the TFT substrate includes:
  • the base substrate
  • a first insulating layer attached to the lower surface of the substrate
  • the active layer is disposed on a lower surface of the first insulating layer
  • a second insulating layer disposed on a lower surface of the active layer
  • the gate is disposed on a lower surface of the second insulating layer
  • a third insulating layer disposed on the lower surface of the gate
  • the source is disposed on a lower surface of the third insulating layer and connected to the active layer through the third insulating layer;
  • the drain is disposed on a lower surface of the third insulating layer and connected to the active layer through the third insulating layer;
  • a flat layer disposed on a lower surface of the third insulating layer and covering the source and the drain, and a source hole is disposed on the flat layer;
  • a common electrode layer disposed on a lower surface of the flat layer
  • a passivation layer disposed on the lower surface of the common electrode layer; the source hole passing through the common electrode layer and the passivation layer;
  • a pixel electrode layer is disposed on a lower surface of the passivation layer, and is connected to the source through an inner surface of the source hole.
  • the CF substrate comprises:
  • a color filter layer disposed on the base substrate and the black matrix layer
  • a protective layer is disposed on the color filter layer.
  • the liquid crystal display panel and the liquid crystal display device provided by the invention can adopt a single-layer COF structure by disposing the backlight module on the outer side of the CF substrate, thereby reducing the thickness of the liquid crystal display panel and the width of the frame, and the process is simple and the cost is relatively low. Low, with great practicality and mass production;
  • the TFT substrate by providing a light shielding layer in the TFT substrate, it is possible to prevent the TFT side metal from being reflected by the external light source to cause display failure, and the display effect can be ensured.
  • FIG. 1 is a schematic structural view of an embodiment of a liquid crystal display device provided by the present invention.
  • FIG. 2 is a schematic structural view of another embodiment of a liquid crystal display device provided by the present invention.
  • FIG. 1 is a schematic structural view of an embodiment of a liquid crystal display device provided by the present invention.
  • the liquid crystal display device includes at least one liquid crystal cell 1 and a backlight module 4, wherein the liquid crystal cell 1 includes oppositely disposed TFT substrates 10, CF substrates 16, and TFT substrates 10 and CF. a liquid crystal layer 13 in the middle of the substrate 16, the backlight module 4 is located outside the CF substrate 16 of the liquid crystal cell;
  • At least the base substrate 100, the thin film transistor (TFT) layer, and the pixel electrode layer are disposed on the TFT substrate 10, and a cover layer is disposed between the base substrate 100 of the TFT substrate 10 and the thin film transistor layer.
  • a light shielding layer 12 of each thin film transistor; a color filter layer 162 is disposed on the CF substrate 16.
  • the thin film transistor layer includes at least an active layer, a gate, a source, and a drain; the light shielding layer 12 is disposed between the substrate and the active layer, facing and covering the gate
  • the light-shielding layer is made of a low-reflection material, so that the metal on the thin film transistor side (ie, the gate, the source, and the drain metal) can be prevented from being reflected by the external light source to cause display failure.
  • the TFT substrate 10 includes:
  • the base substrate 100 may be a glass substrate or a PI (polyimide) substrate;
  • the first insulating layer 101 is adhered to the lower surface of the base substrate 100 of the TFT substrate 10, and may be made of a material such as SiNx or SiOx. It is understood that the lower surface refers to a side close to the liquid crystal layer 13;
  • the active layer 140 is disposed on a lower surface of the first insulating layer 101, and the active layer may be made of a material such as amorphous silicon, IGZO or polysilicon;
  • a second insulating layer 102 disposed on a lower surface of the active layer 140 which may be made of a material such as SiNx or SiOx;
  • the gate 141 is disposed on a lower surface of the second insulating layer 102;
  • a third insulating layer 103 is disposed on a lower surface of the gate electrode 141, and may be made of a material such as SiNx or SiOx;
  • the drain 142 is disposed on a lower surface of the third insulating layer 103 and connected to the active layer 140 through the third insulating layer 103;
  • the source 143 is disposed on the lower surface of the third insulating layer 103 and connected to the active layer 140 through the third insulating layer 103;
  • the flat layer 104 is disposed on the lower surface of the third insulating layer 103, and covers the source 143 and the drain 142, and the source layer 144 is disposed on the flat layer 104;
  • a common electrode layer 105 is disposed on a lower surface of the planar layer 104, which may be an ITO (indium tin oxide) material;
  • a passivation layer 106 is disposed on the lower surface of the common electrode layer 105; the source hole 144 passes through the common electrode layer 105 and the passivation layer 106;
  • the pixel electrode layer 107 is disposed on the lower surface of the passivation layer 106, and is connected to the source 143 through the inner surface of the source hole 144, which may be an ITO material.
  • the light shielding layer 12 is disposed between the base substrate 100 and the first insulating layer 101, facing and covering the gate 141, the source 143 and the drain 142;
  • the light shielding layer 12 may be disposed between the first insulating layer 101 and the active layer 140, facing and covering the gate electrode 141.
  • Source 143 and drain 142 can also achieve similar results.
  • the CF substrate 16 further includes:
  • the base substrate 160 may be a glass substrate or a PI substrate
  • the black matrix layer 161 is disposed on the base substrate 160 of the CF substrate 16. It can be understood that, as described herein, the substrate substrate 160 is disposed on the substrate substrate 160 near the liquid crystal layer. On one side of the surface;
  • the color filter layer 162 is disposed on the base substrate 160 of the CF substrate 16 and the black matrix layer 161, and specifically includes a red filter, a blue filter, and a green filter;
  • the protective layer 163 is disposed on the color filter layer 162.
  • a plurality of support columns 15 are further included in the liquid crystal layer 3.
  • the light shielding layer 12 includes:
  • the first light shielding layer 120 is disposed between the base substrate 100 and the active layer 140, facing and covering the drain 142; in FIG. 2, the first light shielding layer 120 is disposed on the Between the base substrate 100 and the first insulating layer 101, it can be understood that in other embodiments, it may also be disposed between the first insulating layer 101 and the active layer 140;
  • the second light shielding layer 121 is disposed between the base substrate 100 and the active layer 140, facing and covering the source 143; in FIG. 2, the second light shielding layer 121 is disposed on the Between the base substrate 100 and the first insulating layer 101, it can be understood that in other embodiments, it may also be disposed between the first insulating layer 101 and the active layer 140;
  • the third light shielding layer 122 is disposed on the upper side of the gate electrode 141 and faces and covers the gate electrode 141.
  • the liquid crystal display panel and the liquid crystal display device provided by the invention can adopt a single-layer COF structure by disposing the backlight module on the outer side of the CF substrate, thereby reducing the thickness of the liquid crystal display panel and the width of the frame, and the process is simple and the cost is relatively low. Low, with great practicality and mass production;
  • the TFT substrate by providing a light shielding layer in the TFT substrate, it is possible to prevent the TFT side metal from being reflected by the external light source to cause display failure, and the display effect can be ensured.

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Abstract

一种液晶显示面板，其包括相对设置的TFT基板（10）、CF基板（16）以及在TFT基板（10）和CF基板（16）中间的液晶层（13），在TFT基板（10）上至少设置有衬底基板（100）、薄膜晶体管层以及像素电极层（107），在TFT基板（10）的衬底基板（100）与薄膜晶体管层之间设置有用于遮住每一薄膜晶体管的遮光层（12）；在CF基板（16）上设置有彩色滤光片层（162）。以及相应的液晶显示装置，其将背光模组（4）设置在CF基板（16）的外侧，且在TFT基板（10）中设置遮光层（12），可以缩小液晶显示面板的厚度和边框的宽度，且工艺简单，成本较低。

Description

一种液晶显示面板以及液晶显示装置
本申请要求于2017年11月22日提交中国专利局、申请号为201711175834.6、发明名称为“一种液晶显示面板以及液晶显示装置”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示领域，特别涉及一种液晶显示面板以及液晶显示装置。
背景技术
由于液晶显示器(Liquid Crystal Display，LCD)具有工艺成熟，成本较低，可以实现高像素密度(pixels per inch，PPI)及窄边框的优点，具有极大的市场竞争优势。随着技术的发展，现在市场需求显示面板整体厚度极薄化及边框极窄化。目前厚度极薄化主要通过玻璃薄化和模组机构膜层减薄实现，边框极窄化主要通过基板上集成栅极驱动(Gate on Array，COA)，或覆晶薄膜(Chip On Film，COF)等集成技术来实现。
但是目前这些解决方法会存在较多的不足之处。例如，在现有技术中，液晶显示面板的结构通常为彩膜基板(CF Glass)在上，阵列基板(TFT Glass)，背光组件(backlight)设置于阵列基板之下，此时采用单层COF结构，这样的设计有利于边框极窄化但是模组厚度较大；在另一种情形下，可以采用双层COF结构，这样的设计有利于边框极窄化及模组厚度极薄化，但是成本很高且工艺复杂，不适用于量产。
发明内容
本发明所要解决的技术问题在于，提供一种液晶显示面板以及液晶显示装置，其将背光模组设置在CF基板的外侧，且在TFT基板中设置遮光层，可以缩小液晶显示面板的厚度和边框的宽度，且工艺简单，成本较低。
为了解决上述技术问题，本发明的实施例的一方面提供一种液晶显示面 板，其包括相对设置的TFT基板、CF基板以及在所述TFT基板和CF基板中间的液晶层，其中：
在所述TFT基板上至少设置有衬底基板、薄膜晶体管层以及像素电极层，在所述TFT基板的衬底基板与所述薄膜晶体管层之间设置有用于遮住每一薄膜晶体管的遮光层；在所述CF基板上设置有彩色滤光片层。
其中，所述薄膜晶体管层至少包括有源层、栅极、源极、漏极；所述遮光层设置于所述衬底基板与所述有源层之间，正对且遮盖所述栅极、源极、漏极。
其中，所述遮光层包括：
第一遮光层，设置于所述衬底基板与所述有源层之间，正对且遮盖所述漏极；
第二遮光层，设置于所述衬底基板与所述有源层之间，正对且遮盖所述源极；
第三遮光层，设置于所述栅极上侧，正对且遮盖所述栅极。
其中，所述遮光层采用低反射材料制成。
其中，所述TFT基板包括：
所述衬底基板；
第一绝缘层，贴合于所述衬底基板下表面；
所述有源层，设置于所述第一绝缘层下表面；
第二绝缘层，设置于所述有源层下表面；
所述栅极，设置于所述第二绝缘层下表面；
第三绝缘层，设置于所述栅极下表面；
所述源极，设置于所述第三绝缘层下表面，并穿过所述第三绝缘层与所述有源层连接；
所述漏极，设置于所述第三绝缘层下表面，并穿过所述第三绝缘层与所述有源层连接；
平坦层，设置于所述第三绝缘层下表面，且覆盖所述源极和漏极，在所述平坦层上设置有源极孔；
公共电极层，设置于所述平坦层下表面；
钝化层，设置于所述公共电极层下表面；所述源极孔穿过所述公共电极层和钝化层；
像素电极层，设置于所述钝化层下表面，其通过所述源极孔内表面与所述源极相连接。
其中，所述CF基板包括：
衬底基板；
黑矩阵层，设置于所述衬底基板上；
彩色滤光片层，设置于所述衬底基板以及所述黑矩阵层上；
保护层，设置于所述彩色滤光片层上。
相应地，本发明实施例还提供一种液晶显示装置，至少包括一个液晶盒以及一个背光模组，其中，所述液晶盒包括相对设置的TFT基板、CF基板以及在所述TFT基板和CF基板中间的液晶层，所述背光模组位于所述液晶盒的CF基板的外侧；
在所述TFT基板上至少设置有衬底基板、薄膜晶体管层以及像素电极层，在所述TFT基板的衬底基板与所述薄膜晶体管层之间设置有用于遮住每一薄膜晶体管的遮光层；在所述CF基板上设置有彩色滤光片层。
其中，所述薄膜晶体管层至少包括有源层、栅极、源极、漏极；所述遮光层设置于所述衬底基板与所述有源层之间，正对且遮盖所述栅极、源极、漏极。
其中，所述遮光层包括：
第一遮光层，设置于所述衬底基板与所述有源层之间，正对且遮盖所述漏极；
第二遮光层，设置于所述衬底基板与所述有源层之间，正对且遮盖所述源极；
第三遮光层，设置于所述栅极上侧，正对且遮盖所述栅极。
其中，所述遮光层采用低反射材料制成。
其中，所述TFT基板包括：
所述衬底基板；
第一绝缘层，贴合于所述衬底基板下表面；
所述有源层，设置于所述第一绝缘层下表面；
第二绝缘层，设置于所述有源层下表面；
所述栅极，设置于所述第二绝缘层下表面；
第三绝缘层，设置于所述栅极下表面；
所述源极，设置于所述第三绝缘层下表面，并穿过所述第三绝缘层与所述有源层连接；
所述漏极，设置于所述第三绝缘层下表面，并穿过所述第三绝缘层与所述有源层连接；
平坦层，设置于所述第三绝缘层下表面，且覆盖所述源极和漏极，在所述平坦层上设置有源极孔；
公共电极层，设置于所述平坦层下表面；
钝化层，设置于所述公共电极层下表面；所述源极孔穿过所述公共电极层和钝化层；
像素电极层，设置于所述钝化层下表面，其通过所述源极孔内表面与所述源极相连接。
其中，所述CF基板包括：
衬底基板；
黑矩阵层，设置于所述衬底基板上；
彩色滤光片层，设置于所述衬底基板以及所述黑矩阵层上；
保护层，设置于所述彩色滤光片层上。
实施本发明实施例，具有如下有益效果：
本发明提供的液晶显示面板及液晶显示装置，通过将背光模组设置在CF基板的外侧，可以采用单层COF结构，从而可以缩小液晶显示面板的厚度和边框的宽度，且工艺简单，成本较低，具有较大实用性和可量产性；
另外，在TFT基板中设置遮光层，可以防止TFT侧金属在外界光源作用下发生反光引起显示不良，可以保证显示效果。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实 施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1是本发明提供的一种液晶显示装置的一个实施例的结构示意图；
图2是本发明提供的一种液晶显示装置的另一个实施例的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本发明保护的范围。
在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。
如图1所示，是本发明提供的一种液晶显示装置的一个实施例的结构示意图。在该实施例中，该液晶显示装置至少包括一个液晶盒1以及一个背光模组4，其中，所述液晶盒1包括相对设置的TFT基板10、CF基板16以及在所述TFT基板10和CF基板16中间的液晶层13，所述背光模组4位于所述液晶盒的CF基板16的外侧；
在所述TFT基板10上至少设置有衬底基板100、薄膜晶体管(TFT)层以及像素电极层，在所述TFT基板10的衬底基板100与所述薄膜晶体管层之间设置有用于遮住每一薄膜晶体管的遮光层12；在所述CF基板16上设置有彩色滤光片层162。
其中，所述薄膜晶体管层至少包括有源层、栅极、源极和漏极；所述遮光层12设置于所述衬底基板与所述有源层之间，正对且遮盖所述栅极、源极和漏极；所述遮光层采用低反射材料制成，从而可以防止薄膜晶体管侧金属(即栅极、源极、漏极金属)在外界光源作用下发生反光引起显示不良。
具体地，在一个实施例中，所述TFT基板10包括：
衬底基板100，其可以为玻璃材质的基板或PI(聚酰亚胺)材质的基板；
第一绝缘层101，贴合于所述TFT基板10的衬底基板100下表面，其可以采用诸如SiNx或SiOx材料，可以理解的是，上述的下表面指靠近液晶层13的一侧；
所述有源层140，设置于所述第一绝缘层101下表面，所述有源层可以采用诸如非晶硅、IGZO或多晶硅材料；
第二绝缘层102，设置于所述有源层140下表面，其可以采用诸如SiNx或SiOx材料；
所述栅极141，设置于所述第二绝缘层102下表面；
第三绝缘层103，设置于所述栅极141下表面，其可以采用诸如SiNx或SiOx材料；
所述漏极142，设置于所述第三绝缘层103下表面，并穿过所述第三绝缘层103与所述有源层140连接；
所述源极143，设置于所述第三绝缘层103下表面，并穿过所述第三绝缘层103与所述有源层140连接；
平坦层104，设置于所述第三绝缘层103下表面，且覆盖所述源极143和漏极142，在所述平坦层104上设置有源极孔144；
公共电极层105，设置于所述平坦层104下表面，其可以为ITO(铟锡氧化物)材料；
钝化层106，设置于所述公共电极层105下表面；所述源极孔144穿过所述公共电极层105和钝化层106；
像素电极层107，设置于所述钝化层106下表面，其通过所述源极孔144内表面与所述源极143相连接，其可以为ITO材料。
在该实施例中，所述遮光层12设置于所述衬底基板100与第一绝缘层101之间，正对且遮盖所述栅极141、源极143和漏极142；
可以理解的是，在其他的实施例中，也可以将所述述遮光层12设置于所述第一绝缘层101与所述有源层140之间，正对且遮盖所述栅极141、源极143和漏极142，同样能达到类似的效果。
在图1中，所述CF基板16进一步包括：
衬底基板160，其可以是玻璃材质的基板，也可以是PI材质基板；
黑矩阵层161，设置于所述CF基板16的衬底基板160上，可以理解的是，此处所说的设置于所述衬底基板160上，指设置于所述衬底基板160靠近液晶层3的一侧表面上；
彩色滤光片层162，设置于所述所CF基板16的衬底基板160以及所述黑矩阵层161上，其具体包括红色滤光片、蓝色滤光片以及绿色滤光片；
保护层163，设置于所述彩色滤光片层162上。
在所述液晶层3中进一步包括有多个支撑柱15。
如图2所示，示出了是本发明提供的一种液晶显示装置的另一个实施例的结构示意图，在该实施例中，其与图1中示出的实施例中结构的区别在于，所述遮光层12包括：
第一遮光层120，设置于所述衬底基板100与所述有源层140之间，正对且遮盖所述漏极142；在图2中，所述第一遮光层120设置于所述衬底基板100与第一绝缘层101之间，可以理解的是，在其他的实施例中，其也可设置于所述第一绝缘层101与所述有源层140之间；
第二遮光层121，设置于所述衬底基板100与所述有源层140之间，正对且遮盖所述源极143；在图2中，所述第二遮光层121设置于所述衬底基板100与第一绝缘层101之间，可以理解的是，在其他的实施例中，其也可设置于所述第一绝缘层101与所述有源层140之间；
第三遮光层122，设置于所述栅极141上侧，正对且遮盖所述栅极141。
其他结构可参考前述对图2的描述，在此不进行详述。
实施本发明实施例，具有如下有益效果：
本发明提供的液晶显示面板及液晶显示装置，通过将背光模组设置在CF基板的外侧，可以采用单层COF结构，从而可以缩小液晶显示面板的厚度和边框的宽度，且工艺简单，成本较低，具有较大实用性和可量产性；
同时，也不局限于采用单层COF，也可采用其他COF结构，应用具有多元性；
另外，在TFT基板中设置遮光层，可以防止TFT侧金属在外界光源作用下发生反光引起显示不良，可以保证显示效果。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个......”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (18)

  1. 一种液晶显示面板，其包括相对设置的TFT基板、CF基板以及在所述TFT基板和CF基板中间的液晶层，其特征在于：
    在所述TFT基板上至少设置有衬底基板、薄膜晶体管层以及像素电极层，在所述TFT基板的衬底基板与所述薄膜晶体管层之间设置有用于遮住每一薄膜晶体管的遮光层，在所述CF基板上设置有彩色滤光片层。
  2. 如权利要求1所述的一种液晶显示面板，其中，所述薄膜晶体管层至少包括有源层、栅极、源极和漏极；所述遮光层设置于所述衬底基板与所述有源层之间，正对且遮盖所述栅极、源极和漏极。
  3. 如权利要求2所述的一种液晶显示面板，其中，所述遮光层包括：
    第一遮光层，设置于所述衬底基板与所述有源层之间，正对且遮盖所述漏极；
    第二遮光层，设置于所述衬底基板与所述有源层之间，正对且遮盖所述源极；
    第三遮光层，设置于所述栅极上侧，正对且遮盖所述栅极。
  4. 如权利要求3所述的一种液晶显示面板，其中，所述TFT基板包括：
    所述衬底基板；
    第一绝缘层，贴合于所述TFT基板的衬底基板下表面；
    所述有源层设置于所述第一绝缘层下表面；
    第二绝缘层，设置于所述有源层下表面；
    所述栅极设置于所述第二绝缘层下表面；
    第三绝缘层，设置于所述栅极下表面；
    所述源极设置于所述第三绝缘层下表面，并穿过所述第三绝缘层与所述有源层连接；
    所述漏极设置于所述第三绝缘层下表面，并穿过所述第三绝缘层与所述有源层连接；
    平坦层，设置于所述第三绝缘层下表面，且覆盖所述源极和漏极，在所述平坦层上设置有源极孔；
    公共电极层，设置于所述平坦层下表面；
    钝化层，设置于所述公共电极层下表面；所述源极孔穿过所述公共电极层和钝化层；
    所述像素电极层设置于所述钝化层下表面，其通过所述源极孔内表面与所述源极相连接。
  5. 如权利要求4所述的一种液晶显示面板，其中，所述CF基板包括：
    衬底基板；
    黑矩阵层，设置于所述CF基板的衬底基板上；
    彩色滤光片层，设置于所述CF基板的衬底基板以及所述黑矩阵层上；
    保护层，设置于所述彩色滤光片层上。
  6. 如权利要求2所述的一种液晶显示面板，其中，所述遮光层采用低反射材料制成。
  7. 如权利要求3所述的一种液晶显示面板，其中，所述遮光层采用低反射材料制成。
  8. 如权利要求4所述的一种液晶显示面板，其中，所述遮光层采用低反射材料制成。
  9. 如权利要求5所述的一种液晶显示面板，其中，所述遮光层采用低反射材料制成。
  10. 一种液晶显示装置，至少包括一个液晶盒以及一个背光模组，其中，所述液晶盒包括相对设置的TFT基板、CF基板以及在所述TFT基板和CF基板中间的液晶层，所述背光模组位于所述液晶盒的CF基板的外侧；
    在所述TFT基板上至少设置有衬底基板、薄膜晶体管层以及像素电极层，在所述TFT基板的衬底基板与所述薄膜晶体管层之间设置有用于遮住每一薄膜晶体管的遮光层，在所述CF基板上设置有彩色滤光片层。
  11. 如权利要求10所述的一种液晶显示装置，其中，所述薄膜晶体管层至少包括有源层、栅极、源极和漏极；所述遮光层设置于所述衬底基板与所述有源层之间，正对且遮盖所述栅极、源极和漏极。
  12. 如权利要求11所述的一种液晶显示装置，其中，所述遮光层包括：
    第一遮光层，设置于所述衬底基板与所述有源层之间，正对且遮盖所述漏极；
    第二遮光层，设置于所述衬底基板与所述有源层之间，正对且遮盖所述源极；
    第三遮光层，设置于所述栅极上侧，正对且遮盖所述栅极。
  13. 如权利要求12所述的一种液晶显示装置，其中，所述TFT基板包括：
    所述衬底基板；
    第一绝缘层，贴合于所述衬底基板下表面；
    所述有源层，设置于所述第一绝缘层下表面；
    第二绝缘层，设置于所述有源层下表面；
    所述栅极，设置于所述第二绝缘层下表面；
    第三绝缘层，设置于所述栅极下表面；
    所述源极，设置于所述第三绝缘层下表面，并穿过所述第三绝缘层与所述有源层连接；
    所述漏极，设置于所述第三绝缘层下表面，并穿过所述第三绝缘层与所述有源层连接；
    平坦层，设置于所述第三绝缘层下表面，且覆盖所述源极和漏极，在所述平坦层上设置有源极孔；
    公共电极层，设置于所述平坦层下表面；
    钝化层，设置于所述公共电极层下表面；所述源极孔穿过所述公共电极层和钝化层；
    像素电极层，设置于所述钝化层下表面，其通过所述源极孔内表面与所述源极相连接。
  14. 如权利要求13所述的一种液晶显示装置，其中，所述CF基板包括：
    衬底基板；
    黑矩阵层，设置于所述衬底基板上；
    彩色滤光片层，设置于所述衬底基板以及所述黑矩阵层上；
    保护层，设置于所述彩色滤光片层上。
  15. 如权利要求11所述的一种液晶显示装置，其中，所述遮光层采用低反射材料制成。
  16. 如权利要求12所述的一种液晶显示装置，其中，所述遮光层采用低反射材料制成。
  17. 如权利要求13所述的一种液晶显示装置，其中，所述遮光层采用低反射材料制成。
  18. 如权利要求14所述的一种液晶显示装置，其中，所述遮光层采用低反射材料制成。
PCT/CN2017/113529 2017-11-22 2017-11-29 一种液晶显示面板以及液晶显示装置 Ceased WO2019100423A1 (zh)

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CN110441968B (zh) * 2019-08-14 2022-07-12 京东方科技集团股份有限公司 一种液晶显示面板和显示装置
CN115327826A (zh) * 2022-08-18 2022-11-11 合肥京东方光电科技有限公司 一种显示面板及电子设备
CN117558733A (zh) * 2023-11-13 2024-02-13 武汉华星光电技术有限公司 显示面板及显示装置

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