WO2019100422A1 - 准分子激光处理装置及其激光收集装置 - Google Patents

准分子激光处理装置及其激光收集装置 Download PDF

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WO2019100422A1
WO2019100422A1 PCT/CN2017/113519 CN2017113519W WO2019100422A1 WO 2019100422 A1 WO2019100422 A1 WO 2019100422A1 CN 2017113519 W CN2017113519 W CN 2017113519W WO 2019100422 A1 WO2019100422 A1 WO 2019100422A1
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mirror
laser
sub
light
processing apparatus
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何伟铭
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length

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  • the invention relates to the field of excimer laser technology, in particular to an excimer laser processing device and a laser collecting device thereof.
  • Excimer Laser Annealing converts amorphous silicon (a-Si) to polysilicon (p-Si), increasing electron mobility by hundreds of times. It can increase the pixel density in high-end thin film transistors or displays.
  • the excimer laser line beam system is capable of processing active matrix driven liquid crystal displays (AMLCDs) and active matrix organic light emitting diode panels (AMOLEDs) required for smartphones and OLED (Organic Light Emitting Display) televisions.
  • AMLCDs active matrix driven liquid crystal displays
  • AMOLEDs active matrix organic light emitting diode panels
  • the laser radiation range outside the product process size is often covered with a reflector and the laser is located.
  • the cooling device is disposed on the side, and the excess laser light that is not incident on the product is reflected back by the reflector, and finally absorbed by the cooling device, which causes waste of laser energy and an increase in cost.
  • the present invention provides an excimer laser processing apparatus and a laser collecting apparatus thereof that improve laser light utilization efficiency and reduce production cost.
  • a laser collecting device for an excimer laser processing device comprising: a first mirror disposed on a light exiting the laser beam away from the laser; a second mirror disposed on the exiting path of the laser near the laser; and a second electrode disposed outside the exiting path of the laser a mirror set, the first mirror is disposed at an edge of a radiation range of the emitted light of the laser, configured to receive the light emitted by the laser, and emit the received light to the first mirror group, by the first Light reflected by the mirror group is emitted to the second mirror, the The two mirrors are inclined toward the direction away from the laser, and the light incident from the first mirror group is reflected to the surface of the object to be laser processed.
  • the first mirror group includes a first sub-mirror and a second sub-mirror, and the light incident from the first mirror passes through the first sub-mirror, The second sub-mirror is reflected and emitted to the second mirror.
  • angles of the first mirror, the first sub-mirror, the second sub-mirror, the second mirror, and the exiting optical path of the laser are both .
  • the laser collection device of the excimer laser processing device further includes a first sub-mirror disposed away from the laser on the exiting path of the laser, and a second sub-mirror disposed on the exiting path of the laser near the laser.
  • a second mirror group disposed outside the exiting path of the laser, the first sub-mirror being disposed at an edge of a radiation range of the emitted light of the laser; in the direction of the outgoing light path of the laser, the second sub-mirror is a projection on the first mirror is at least partially outside the first mirror, and a projection of the second mirror on the first sub-mirror is at least partially outside the first sub-mirror; a second mirror group for receiving light reflected from the first secondary mirror and reflecting to the second secondary mirror, the second secondary mirror being inclined toward a direction away from the laser for The light incident from the second mirror group is reflected to the surface of the object to be laser processed.
  • the first sub-mirror and the second sub-mirror are respectively symmetrically disposed with respect to the laser with the first mirror and the second mirror.
  • the projections of the first mirror and the second mirror on the laser are respectively located on opposite sides of the laser.
  • the end of the first sub-mirror adjacent to the second sub-mirror intersects and abuts the corresponding end of the second sub-mirror.
  • an end of the first sub-mirror adjacent to the first mirror intersects and abuts a corresponding end of the first mirror.
  • the first sub-mirror is integrally formed with at least one of the second sub-mirror and the first mirror.
  • Another object of the present invention is to provide an excimer laser processing apparatus including a laser and a laser collecting apparatus of the excimer laser processing apparatus.
  • the invention provides a pair of lasers to be processed by the object to be laser processed
  • a laser collecting device such as a surface laser collects unutilized light and re-projects it onto the surface of the object to be laser-processed for secondary use, thereby improving the light utilization efficiency of the laser and reducing the production cost.
  • FIG. 1 is a schematic structural view of an excimer laser processing apparatus according to an embodiment of the present invention.
  • the excimer laser processing apparatus includes a laser L and a laser collecting device (not shown) between the laser L and the object P to be laser processed. A part of the laser light emitted by the laser L is directly irradiated to the surface of the object P to be laser-processed, and the other part is collected by the laser collecting device and then irradiated to the surface of the object P to be laser-processed for secondary use.
  • the laser collecting device of this embodiment mainly includes a first mirror 1, a second mirror 2, a first mirror group 3, a first sub mirror 1', a second sub mirror 2', and a second mirror group 3.
  • the first mirror 1 and the first sub-mirror 1' are both disposed on the outgoing light path of the laser L and away from the laser L.
  • the second mirror 2 and the second sub-mirror 2' are both disposed on the outgoing light of the laser L.
  • the first mirror group 3 and the second mirror group 3' are both disposed outside the radiation range of the exiting optical path of the laser L.
  • the first mirror 1, the second mirror 2 and the first mirror group 3 form an optical path, and the first sub-mirror 1', the second sub-mirror 2' and the second mirror group 3' form another optical path. aisle.
  • the first mirror 1 is disposed at the edge of the radiation range of the outgoing light of the laser L for receiving light emitted by the laser L to be processed on the object P to be laser processed (such as cutting), and will receive the light.
  • the light rays are emitted to the first mirror group 3, and the light reflected by the first mirror group 3 is emitted to the second mirror 2, and the second mirror 2 is inclined toward the direction away from the laser L, and will be from the first mirror group 3.
  • the incident light is reflected to the surface of the object P to be laser processed.
  • the first secondary mirror 1' is disposed at the edge of the radiation range of the outgoing light of the laser L, and the second mirror group 3' receives the light reflected from the first secondary mirror 1' and reflects it to the second pair.
  • the mirror 2', the second sub-mirror 2' is inclined in a direction away from the laser L, and can reflect the light incident from the second mirror group 3' to the surface of the object P to be laser-processed.
  • the projections of the first mirror 1 and the second mirror 2 on the laser L are respectively located on opposite sides of the laser L, ie
  • the first mirror 1, the second sub mirror 2', and the first mirror group 3 are located on one side of the exiting optical path of the laser L
  • the first sub mirror 1', the second mirror 2, and the second mirror group 3′ is located on the other opposite side of the exiting optical path of the laser L
  • the projections of the second mirror 2 and the second mirror group 3′ on the surface of the object P to be laser processed respectively cover at least the correspondence of the object P to be laser processed the edge of.
  • the light reflected by the second mirror 2 on the right side to the object P to be laser processed covers at least the right edge of the object P to be laser processed and a partial area near the middle, and is located on the left side.
  • the light of the second sub-mirror 2' reflected to the object P to be laser-processed covers at least the left edge of the object P to be laser-processed and the partial region near the middle.
  • the first mirror group 3 includes a first sub-mirror 31 and a second sub-mirror 32.
  • the light incident from the first mirror 1 passes through the first sub-mirror 31 and the second sub-sequence.
  • the mirror 32 reflects and then exits to the second mirror 2.
  • the second mirror group 3' includes a first sub-sub mirror 31' and a second sub-sub mirror 32'.
  • the light incident from the first sub-mirror 1' is sequentially passed through the first sub-sub mirror 31', The two sub-reflecting mirrors 32' are reflected and then emitted to the second sub-mirror 2'.
  • each of the mirrors in 3' is only coated with a reflective layer on one side, and the concentration of the laser light is high. Therefore, the laser light can be normally transmitted from the back of each mirror, and when the laser light is incident on each mirror, a reflection is plated. The front of the layer is reflected back.
  • the optical path of the two paths of the laser collecting device is: laser L ⁇ first mirror 1 ⁇ first mirror group 3 ⁇ second mirror 2, laser L ⁇ first sub mirror 1′ ⁇ second
  • the reflecting surface, the light emitted from the second sub-reflector 32' of the second mirror group 3' passes through the second mirror 2 and is incident on the reflecting surface of the second sub-mirror 2', and the optical paths of the left and right portions Do not interfere with each other.
  • the projection of the second secondary mirror 2' on the first mirror 1 is at least partially located outside the first mirror 1 and in the object P to be laser processed
  • the second mirror 2 the projection on the first secondary mirror 1' is at least partially located outside the first secondary mirror 1' and the object P to be laser processed, with a gap between the first mirror 1 and the first secondary mirror 1' for
  • the laser light passes through directly to the surface of the object P to be laser processed. That is, the area defined by the projection of the first mirror 1 and the first sub-mirror 1' on the surface of the object P to be laser-processed, that is, the process size corresponding to the object, the first mirror 1 and the first sub-mirror 1' It is the effect of shading.
  • the angles of the first mirror 1, the first sub-mirror 31, the second sub-mirror 32, the second mirror 2 and the exiting path of the laser L are both 45. °, the light that is finally irradiated onto the surface of the object P to be laser-treated is vertically incident.
  • the first sub-mirror 1' and the second sub-mirror 2' are symmetrically disposed with respect to the laser L, respectively, the first mirror 1 and the second mirror 2, and the first mirror group 3 and the second mirror group 3' Regarding the symmetric setting of the laser L, the uniformity and consistency of the light in each area are ensured.
  • the end of the first sub-mirror 31 adjacent to the second sub-mirror 32 may also intersect and abut the corresponding end of the second sub-mirror 32 such that the first sub-mirror 31 passes through the first sub-mirror 31.
  • the reflected light can be received by the second sub-reflector 32 to the utmost.
  • the end of the first sub-sub mirror 31' adjacent to the second sub-sub mirror 32' can also be combined with the second sub-reflector 32.
  • the upper corresponding ends intersect and abut, and the light reflected by the first sub-sub mirror 31' can be received by the second sub-reflector 32' to the utmost.
  • the end portion of the first sub-mirror 31 adjacent to the first mirror 1 also intersects and abuts the corresponding end portion of the first mirror 1, and the first sub-sub mirror 31' is adjacent to the first sub-reflection.
  • the end of the mirror 1' also intersects with the corresponding end of the first sub-mirror 1' and abuts, so that the light emitted from the first mirror 1 and the first sub-mirror 1' can be maximally correspondingly
  • the first sub-reflector 31 and the first sub-sub mirror 31' are received.
  • the first sub-mirror 31 can be integrally formed with at least one of the second sub-mirror 32 and the first mirror 1. No relative displacement occurs between the plurality of mirrors, and an optical path between the plurality of reflective portions can be ensured. The accuracy of the transfer also avoids light leakage at the intersection between two adjacent mirrors.
  • the present invention provides a laser collecting device for collecting laser light that is not incident on the surface of the object to be laser processed between the laser and the object to be laser processed, and collects and re-projects the unused light to the object.
  • the surface of the object to be laser processed is used twice, which improves the light utilization rate of the laser and reduces the production cost.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
  • Dental Tools And Instruments Or Auxiliary Dental Instruments (AREA)

Abstract

公开了一种准分子激光处理装置及其激光收集装置。激光收集装置包括设于激光器（L）出射光路上远离激光器的第一反射镜（1）、设于激光器出射光路上靠近激光器的第二反射镜（2）以及设于激光器出射光路外的第一反射镜组（3）；第一反射镜接收激光器发出的光线并反射至第一反射镜组，经第一反射镜组反射的光线射出至第二反射镜，第二反射镜朝向背离激光器的方向倾斜，将从第一反射镜组射入的光线反射至待激光处理的对象（P）表面。通过设置对未射到待激光处理的对象表面的激光进行收集的激光收集装置，将未被利用的光线进行收集并再投射到待激光处理的对象表面进行二次利用，提高了激光的光线利用率，降低了生产成本。

Description

准分子激光处理装置及其激光收集装置 技术领域
本发明涉及准分子激光技术领域，尤其涉及一种准分子激光处理装置及其激光收集装置。
背景技术
随着准分子激光器(Excimer Laser)在显示面板行业的广泛应用，准分子激光器的使用成本越来越受到关注。例如，作为一个关键的加工工艺，准分子激光退火(Excimer Laser Annealing，ELA)将非晶硅(a-Si)转变为多晶硅(p-Si)，使电子迁移率提高了数百倍，由此可以提升高端薄膜晶体管或显示屏中的像素密度。准分子激光器线光束系统能够加工智能手机和OLED((OrganicLight Emitting Display，有机发光显示器)电视所需的有源矩阵驱动液晶显示屏(AMLCD)和主动矩阵有机发光二极管面板(AMOLED)。
目前，行业对于如何提高准分子激光器的使用效率没有特别有效的解决方法，特别是当产品制程尺寸小于激光辐射范围时，往往在产品制程尺寸外的激光辐射范围铺设有反光板，并在激光器所在侧设置冷却装置，未射到产品上的多余的激光就会被反光板反射回，最后被冷却装置吸收，这就造成了激光能量的浪费和成本的增加。
发明内容
鉴于现有技术存在的不足，本发明提供了一种提高激光光线利用率、降低生产成本的准分子激光处理装置及其激光收集装置。
为了实现上述的目的，本发明采用了如下的技术方案：
一种准分子激光处理装置的激光收集装置，包括设于激光器出射光路上远离激光器的第一反射镜、设于激光器出射光路上靠近激光器的第二反射镜以及设于激光器出射光路外的第一反射镜组，所述第一反射镜设于激光器的出射光的辐射范围边缘，用于接收激光器发出的光线，并将接收的光线射出至所述第一反射镜组，经所述第一反射镜组反射的光线射出至所述第二反射镜，所述第 二反射镜朝向背离激光器的方向倾斜，将从所述第一反射镜组射入的光线反射至待激光处理的对象表面。
作为其中一种实施方式，所述第一反射镜组包括第一子反射镜和第二子反射镜，所述自所述第一反射镜射入的光线依次经所述第一子反射镜、第二子反射镜反射后射出至所述第二反射镜。
作为其中一种实施方式，所述第一反射镜、所述第一子反射镜、所述第二子反射镜、所述第二反射镜与所述激光器的出射光路的夹角均为°。
作为其中一种实施方式，所述的准分子激光处理装置的激光收集装置还包括设于激光器出射光路上远离激光器的第一副反射镜、设于激光器出射光路上靠近激光器的第二副反射镜以及设于激光器出射光路外的第二反射镜组，所述第一副反射镜设于激光器的出射光的辐射范围边缘；在激光器的出射光路方向上，所述第二副反射镜在所述第一反射镜上的投影至少部分位于所述第一反射镜外，所述第二反射镜在所述第一副反射镜上的投影至少部分位于所述第一副反射镜外；所述第二反射镜组用于接收从第一副反射镜反射的光线，并反射至所述第二副反射镜，所述第二副反射镜朝向背离激光器的方向倾斜，用于将从所述第二反射镜组射入的光线反射至待激光处理的对象表面。
作为其中一种实施方式，所述第一副反射镜、所述第二副反射镜分别与所述第一反射镜、所述第二反射镜关于激光器对称设置。
作为其中一种实施方式，所述第一反射镜、所述第二反射镜在激光器上的投影分别位于激光器的两相对侧。
作为其中一种实施方式，所述第一子反射镜上靠近所述第二子反射镜的端部与所述第二子反射镜上对应的端部相交且抵接。
作为其中一种实施方式，所述第一子反射镜上靠近所述第一反射镜的端部与所述第一反射镜上对应的端部相交且抵接。
作为其中一种实施方式，所述第一子反射镜与所述第二子反射镜、所述第一反射镜中的至少一个一体形成。
本发明的另一目的在于提供一种准分子激光处理装置，包括激光器和所述的准分子激光处理装置的激光收集装置。
本发明在激光器与待激光处理的对象之间设置有对未射到待激光处理的对 象表面的激光进行收集的激光收集装置，将未被利用的光线进行收集并再投射到待激光处理的对象表面进行二次利用，提高了激光的光线利用率，降低了生产成本。
附图说明
图1为本发明实施例的准分子激光处理装置的结构示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
参阅图1，本发明实施例的准分子激光处理装置的结构示意图，该准分子激光处理装置包括激光器L和位于激光器L与待激光处理的对象P之间的激光收集装置(图未标)。激光器L发出的激光光线一部分直接照射至待激光处理的对象P表面，另一部分经激光收集装置收集后照射至待激光处理的对象P表面进行二次利用。
本实施例的激光收集装置主要包括第一反射镜1、第二反射镜2、第一反射镜组3、第一副反射镜1′、第二副反射镜2′以及第二反射镜组3′，第一反射镜1、第一副反射镜1′均设于激光器L的出射光路上并远离激光器L，第二反射镜2、第二副反射镜2′均设于激光器L的出射光路上且相比第一反射镜1、第一副反射镜1′更靠近激光器L，第一反射镜组3、第二反射镜组3′均设于激光器L的出射光路的辐射范围外。
第一反射镜1、第二反射镜2与第一反射镜组3组成一路光路通道，第一副反射镜1′、第二副反射镜2′与第二反射镜组3′组成另一路光路通道。第一反射镜1设于激光器L的出射光的辐射范围边缘，用于接收激光器L发出的将会射至待激光处理的对象P上的制程(如切割)尺寸外的光线，并将接收到的光线射出至第一反射镜组3，经第一反射镜组3反射的光线射出至第二反射镜2，第二反射镜2朝向背离激光器L的方向倾斜，将从第一反射镜组3射入的光线反射至待激光处理的对象P表面。同样地，第一副反射镜1′设于激光器L的出射光的辐射范围边缘，第二反射镜组3′接收从第一副反射镜1′反射的光线，并将其反射至第二副反射镜2′，第二副反射镜2′朝向背离激光器L的方向倾斜，可将从第二反射镜组3′射入的光线反射至待激光处理的对象P表面。
为保证最大限度地将收集到的光线射入到待激光处理的对象P表面，这里，第一反射镜1、第二反射镜2在激光器L上的投影分别位于激光器L的两相对侧，即第一反射镜1、第二副反射镜2′、第一反射镜组3位于激光器L的出射光路的一侧，第一副反射镜1′、第二反射镜2、第二反射镜组3′位于激光器L的出射光路的另一个相对侧，第二反射镜2、第二反射镜组3′在待激光处理的对象P表面的投影分别至少覆盖该待激光处理的对象P的对应的边缘。这样，如图1所示，位于右侧的第二反射镜2反射至待激光处理的对象P的光线至少覆盖待激光处理的对象P的右侧边缘及靠近中部的部分区域，而位于左侧的第二副反射镜2′反射至待激光处理的对象P的光线至少覆盖待激光处理的对象P的左侧边缘及靠近中部的部分区域。
作为其中一种实施方式，第一反射镜组3包括第一子反射镜31和第二子反射镜32，自第一反射镜1射入的光线依次经第一子反射镜31、第二子反射镜32反射后射出至第二反射镜2。第二反射镜组3′包括第一子副反射镜31′和第二子副反射镜32′，自第一副反射镜1′射入的光线依次经第一子副反射镜31′、第二子副反射镜32′反射后射出至第二副反射镜2′。
需要注意的是，由于本实施例的第一反射镜1、第二反射镜2、第一反射镜组3、第一副反射镜1′、第二副反射镜2′以及第二反射镜组3′中的各反射镜只在单面镀反射层，激光光线的集中度高，因此，激光光线可以从各反射镜背面正常透过，而当激光光线射入到各反射镜镀附有反射层的正面时则会被反射回。因此，激光收集装置的两路光线的光路路径分别是：激光器L→第一反射镜1→第一反射镜组3→第二反射镜2，激光器L→第一副反射镜1′→第二反射镜组3′→第二副反射镜2′，从第一反射镜组3的第二子反射镜32射出的光线透过第二副反射镜2′后射入到第二反射镜2的反射面，从第二反射镜组3′的第二子副反射镜32′射出的光线透过第二反射镜2后射入到第二副反射镜2′的反射面，左右两部分的光路互不干涉。
另外，在激光器L的出射光路方向上，第二副反射镜2′在第一反射镜1上的投影至少部分位于第一反射镜1外和待激光处理的对象P内，第二反射镜2在第一副反射镜1′上的投影至少部分位于第一副反射镜1′外和待激光处理的对象P，第一反射镜1与第一副反射镜1′之间具有间隙，供激光通过而直接照射至待激光处理的对象P表面。即第一反射镜1、第一副反射镜1′在待激光处理的对象P表面的投影所限定的区域即对应该对象的制程尺寸，第一反射镜1、第一副反射镜1′起到了遮光的效果。
为保证激光光线的均匀性以及可控性，第一反射镜1、第一子反射镜31、第二子反射镜32、第二反射镜2与激光器L的出射光路的夹角均为45°，最终照射至待激光处理的对象P表面的光线都是垂直射入。同时，第一副反射镜1′、第二副反射镜2′分别与第一反射镜1、第二反射镜2关于激光器L对称设置，第一反射镜组3与第二反射镜组3′关于激光器L对称设置，保证各区域光线的均匀性和一致性。
在其他实施方式中，第一子反射镜31上靠近第二子反射镜32的端部还可以与第二子反射镜32上对应的端部相交且抵接，使得经第一子反射镜31反射的光线可以最大限度地被第二子反射镜32接收到，同样，第一子副反射镜31′上靠近第二子副反射镜32′的端部还可以与第二子副反射镜32′上对应的端部相交且抵接，经第一子副反射镜31′反射的光线可以最大限度地被第二子副反射镜32′接收到。
进一步地，第一子反射镜31上靠近第一反射镜1的端部也与第一反射镜1上对应的端部相交且抵接，第一子副反射镜31′上靠近第一副反射镜1′的端部也与第一副反射镜1′上对应的端部相交且抵接，可以保证从第一反射镜1、第一副反射镜1′射出的光线可以最大限度地被相应的第一子反射镜31、第一子副反射镜31′接收到。第一子反射镜31可以与第二子反射镜32、第一反射镜1中的至少一个一体形成，多个反射镜之间不会发生相对错动，可以保证多个反射部位之间的光路传递的精确性，也避免了两相邻的反射镜之间的相交处漏光。
综上所述，本发明在激光器与待激光处理的对象之间设置有对未射到待激光处理的对象表面的激光进行收集的激光收集装置，将未被利用的光线进行收集并再投射到待激光处理的对象表面进行二次利用，提高了激光的光线利用率，降低了生产成本。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (20)

  1. 一种准分子激光处理装置的激光收集装置，其中，包括设于激光器出射光路上远离激光器的第一反射镜、设于激光器出射光路上靠近激光器的第二反射镜以及设于激光器出射光路外的第一反射镜组，所述第一反射镜设于激光器的出射光的辐射范围边缘，用于接收激光器发出的光线，并将接收的光线射出至所述第一反射镜组，经所述第一反射镜组反射的光线射出至所述第二反射镜，所述第二反射镜朝向背离激光器的方向倾斜，将从所述第一反射镜组射入的光线反射至待激光处理的对象表面。
  2. 根据权利要求1所述的准分子激光处理装置的激光收集装置，其中，所述第一反射镜组包括第一子反射镜和第二子反射镜，所述自所述第一反射镜射入的光线依次经所述第一子反射镜、第二子反射镜反射后射出至所述第二反射镜。
  3. 根据权利要求2所述的准分子激光处理装置的激光收集装置，其中，所述第一反射镜、所述第一子反射镜、所述第二子反射镜、所述第二反射镜与所述激光器的出射光路的夹角均为45°。
  4. 根据权利要求3所述的准分子激光处理装置的激光收集装置，其中，还包括设于激光器出射光路上远离激光器的第一副反射镜、设于激光器出射光路上靠近激光器的第二副反射镜以及设于激光器出射光路外的第二反射镜组，所述第一副反射镜设于激光器的出射光的辐射范围边缘；在激光器的出射光路方向上，所述第二副反射镜在所述第一反射镜上的投影至少部分位于所述第一反射镜外，所述第二反射镜在所述第一副反射镜上的投影至少部分位于所述第一副反射镜外；所述第二反射镜组用于接收从第一副反射镜反射的光线，并反射至所述第二副反射镜，所述第二副反射镜朝向背离激光器的方向倾斜，用于将从所述第二反射镜组射入的光线反射至待激光处理的对象表面。
  5. 根据权利要求4所述的准分子激光处理装置的激光收集装置，其中，所述第一副反射镜、所述第二副反射镜分别与所述第一反射镜、所述第二反射镜关于激光器对称设置。
  6. 根据权利要求2所述的准分子激光处理装置的激光收集装置，其中，所述第一反射镜、所述第二反射镜在激光器上的投影分别位于激光器的两相对侧。
  7. 根据权利要求6所述的准分子激光处理装置的激光收集装置，其中，所 述第一子反射镜上靠近所述第二子反射镜的端部与所述第二子反射镜上对应的端部相交且抵接，和/或，所述第一子反射镜上靠近所述第一反射镜的端部与所述第一反射镜上对应的端部相交且抵接。
  8. 根据权利要求7所述的准分子激光处理装置的激光收集装置，其中，所述第一子反射镜与所述第二子反射镜、所述第一反射镜中的至少一个一体形成。
  9. 根据权利要求3所述的准分子激光处理装置的激光收集装置，其中，所述第一反射镜、所述第二反射镜在激光器上的投影分别位于激光器的两相对侧。
  10. 根据权利要求9所述的准分子激光处理装置的激光收集装置，其中，所述第一子反射镜上靠近所述第二子反射镜的端部与所述第二子反射镜上对应的端部相交且抵接，和/或，所述第一子反射镜上靠近所述第一反射镜的端部与所述第一反射镜上对应的端部相交且抵接。
  11. 根据权利要求4所述的准分子激光处理装置的激光收集装置，其中，所述第一反射镜、所述第二反射镜在激光器上的投影分别位于激光器的两相对侧。
  12. 根据权利要求11所述的准分子激光处理装置的激光收集装置，其中，所述第一子反射镜上靠近所述第二子反射镜的端部与所述第二子反射镜上对应的端部相交且抵接，和/或，所述第一子反射镜上靠近所述第一反射镜的端部与所述第一反射镜上对应的端部相交且抵接。
  13. 一种准分子激光处理装置，其中，包括激光器和激光收集装置，所述激光收集装置包括设于激光器出射光路上远离激光器的第一反射镜、设于激光器出射光路上靠近激光器的第二反射镜以及设于激光器出射光路外的第一反射镜组，所述第一反射镜设于激光器的出射光的辐射范围边缘，用于接收激光器发出的光线，并将接收的光线射出至所述第一反射镜组，经所述第一反射镜组反射的光线射出至所述第二反射镜，所述第二反射镜朝向背离激光器的方向倾斜，将从所述第一反射镜组射入的光线反射至待激光处理的对象表面。
  14. 根据权利要求13所述的准分子激光处理装置，其中，所述第一反射镜组包括第一子反射镜和第二子反射镜，所述自所述第一反射镜射入的光线依次经所述第一子反射镜、第二子反射镜反射后射出至所述第二反射镜。
  15. 根据权利要求14所述的准分子激光处理装置，其中，所述第一反射镜、所述第一子反射镜、所述第二子反射镜、所述第二反射镜与所述激光器的出射 光路的夹角均为45°。
  16. 根据权利要求15所述的准分子激光处理装置，其中，所述激光收集装置还包括设于激光器出射光路上远离激光器的第一副反射镜、设于激光器出射光路上靠近激光器的第二副反射镜以及设于激光器出射光路外的第二反射镜组，所述第一副反射镜设于激光器的出射光的辐射范围边缘；在激光器的出射光路方向上，所述第二副反射镜在所述第一反射镜上的投影至少部分位于所述第一反射镜外，所述第二反射镜在所述第一副反射镜上的投影至少部分位于所述第一副反射镜外；所述第二反射镜组用于接收从第一副反射镜反射的光线，并反射至所述第二副反射镜，所述第二副反射镜朝向背离激光器的方向倾斜，用于将从所述第二反射镜组射入的光线反射至待激光处理的对象表面。
  17. 根据权利要求16所述的准分子激光处理装置，其中，所述第一副反射镜、所述第二副反射镜分别与所述第一反射镜、所述第二反射镜关于激光器对称设置。
  18. 根据权利要求17所述的准分子激光处理装置，其中，所述第一反射镜、所述第二反射镜在激光器上的投影分别位于激光器的两相对侧。
  19. 根据权利要求18所述的准分子激光处理装置，其中，所述第一子反射镜上靠近所述第二子反射镜的端部与所述第二子反射镜上对应的端部相交且抵接，和/或，所述第一子反射镜上靠近所述第一反射镜的端部与所述第一反射镜上对应的端部相交且抵接。
  20. 根据权利要求19所述的准分子激光处理装置，其中，所述第一子反射镜与所述第二子反射镜、所述第一反射镜中的至少一个一体形成。
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