WO2019095722A1 - 太阳能电池硅片承载装置以及传输系统 - Google Patents

太阳能电池硅片承载装置以及传输系统 Download PDF

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Publication number
WO2019095722A1
WO2019095722A1 PCT/CN2018/097486 CN2018097486W WO2019095722A1 WO 2019095722 A1 WO2019095722 A1 WO 2019095722A1 CN 2018097486 W CN2018097486 W CN 2018097486W WO 2019095722 A1 WO2019095722 A1 WO 2019095722A1
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solar cell
receiving groove
cell wafer
mask
tray
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PCT/CN2018/097486
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English (en)
French (fr)
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袁世成
张风港
杨肸曦
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君泰创新（北京）科技有限公司
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Publication of WO2019095722A1 publication Critical patent/WO2019095722A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67379—Closed carriers characterised by coupling elements, kinematic members, handles or elements to be externally gripped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the field of loading technology of workpieces, and more particularly to a solar cell wafer carrier and a transmission system.
  • Solar cells are a kind of photoelectric conversion device developed based on photovoltaic effect.
  • solar cells in the international photovoltaic market mainly include crystalline silicon (including single crystal silicon, polycrystalline silicon), amorphous/single crystal heterojunction (HIT), and non- Crystalline silicon film, cadmium telluride (CdTe) film and copper indium selenide (CIS) thin film solar cell.
  • silicon wafers are the main raw materials, and the core process is to deposit one or more solid films on the surface of the silicon wafer by processes such as PVD and PECVD. Since the silicon wafer is small in size (a typical size example is about 156 mm ⁇ 156 mm ⁇ 0.18 mm) and is fragile, it is necessary to ensure the transmission stability and positioning reliability of the silicon wafer in the process of processing the solar cell.
  • the transmission of the silicon wafer is directly transmitted by the transmission belt, which easily causes the silicon wafer to be broken, thereby causing irreparable loss.
  • the coating process of the solar cell generally involves depositing a plurality of layers on the silicon wafer or the substrate, and in the process of coating, the film layer is also deposited on the side of the film layer, in order to avoid leakage between subsequent layers. In other cases, it is necessary to insulate the side of the battery sheet after the coating is completed.
  • the method of insulating the side surface of the battery sheet is to polish the film layer on the side of the battery sheet by using a grinding tool.
  • the grinding process is likely to cause breakage of the battery sheet and reduce production efficiency.
  • the purpose of the present disclosure is to provide a solar cell wafer carrier and a transmission system to at least partially solve the above problems, to protect the solar cell wafer during transmission, and to avoid side coating of the solar cell during the coating process, thereby avoiding solar energy.
  • the battery silicon is broken.
  • a solar cell wafer carrier device including: a tray, one side surface of the tray is provided with a gap and a receiving groove, and the gap and the receiving groove are stepped a mask-like distribution, and the gap is located below the accommodating groove; a mask auxiliary member, the mask auxiliary member is attached to the accommodating groove, and the mask auxiliary member is provided with a mask hole.
  • the mask hole communicates with the receiving groove, and the mask hole is provided with a shielding portion along a circumferential direction thereof, and the shielding portion blocks an edge of the receiving groove.
  • the solar cell wafer carrier further includes a bottom plate for carrying the tray, the bottom plate capable of carrying at least two of the trays.
  • the tray is fixedly coupled to an upper surface of the bottom plate.
  • an identification code is provided on the bottom plate.
  • the tray is coupled to the bottom plate by a locating pin.
  • the bottom plate and the tray are integrally formed.
  • the shape of the receiving groove and the mask hole are both square, and the lateral central axis of the receiving groove when the mask auxiliary member is covered on the receiving groove And a longitudinal central axis respectively coincides with a transverse central axis and a longitudinal central axis of the mask hole.
  • the mask hole includes a vertical hole segment and a flare hole segment, and an area of a cross section of the flare hole segment near an end of the vertical hole segment is smaller than the vertical direction An area of a cross section of one end of the hole section; an area of a cross section of the vertical hole section is smaller than an area of a cross section of the receiving groove; and when the mask auxiliary member is attached to the receiving groove, The vertical bore segment cooperates with the receiving slot.
  • the side length of the receiving groove is larger than the side length of the vertical hole segment by a set value.
  • a support platform is disposed in the gap, and an upper end surface of the support table is flush with a bottom end of the receiving groove.
  • a solar cell wafer transfer system comprising any of the solar cell wafer carrier devices described above.
  • FIG. 1 is a schematic structural view of a solar cell wafer carrier device according to an embodiment of the present disclosure
  • FIG. 2 is a cross-sectional view of a tray of a solar cell wafer carrier device in an embodiment of the present disclosure
  • FIG. 3 is a cross-sectional view of a solar cell wafer loaded with a tray and a tray of a solar cell wafer carrier device in an embodiment of the present disclosure
  • FIG. 4 is a cross-sectional view of a mask auxiliary member of a solar cell wafer carrying device in an embodiment of the present disclosure
  • Figure 5 is a cross-sectional view showing a state of use of a solar cell wafer carrying device in an embodiment of the present disclosure.
  • the solar cell wafer carrier device provided by the embodiment of the present disclosure includes a tray 10 and a mask auxiliary member 20 .
  • a tray 10 and a mask auxiliary member 20 In Fig. 1, two trays 10 and two mask assistants 20 are in a separated state, and the remaining trays 10 and mask assistants 20 are in a mutual engagement state.
  • one side surface of the tray 10 is provided with a gap 11 and a receiving groove 12, and the gap 11 and the receiving groove 12 are arranged in a stepped manner, and the gap 11 is located in the receiving groove 12 Below.
  • the area of the cross section of the accommodating groove 12 is larger than the area of the cross section of the vacant groove 11, so that a step which can support the solar cell wafer 40 is formed between the accommodating groove 12 and the vacant groove 11.
  • the receiving groove 12 is for accommodating the solar cell wafer 40. As shown in FIG. 3, the solar cell wafer 40 is placed on the step between the receiving groove 12 and the gap 11.
  • the gap 11 allows the solar cell wafer 40 to be in an overhead state when placed in the accommodating groove 12, thereby facilitating the robot to take the solar cell wafer 40.
  • the volume of the above-mentioned receiving groove 12 is adapted to the volume of the solar cell wafer 40 to be accommodated.
  • the edge of the solar cell wafer 40 is gap-fitted with the sidewall of the receiving groove 12.
  • the limiting groove 121 is disposed in the receiving groove 12 , and the limiting portion 121 is a side wall of the receiving groove 12 .
  • the depth of the receiving trench 12 is slightly greater than the thickness of the solar cell wafer 40.
  • the central portion of the solar cell wafer 40 is prevented from being deformed due to lack of support, and a support table 111 is disposed in the gap 11.
  • the upper end surface of the support table 111 is flush with the bottom end of the receiving groove 12.
  • the number of support tables can be designed according to the size of the solar cell silicon wafer.
  • the support table 111 can be integrally formed with the tray 10.
  • the mask auxiliary member 20 is covered on the receiving groove 12.
  • the mask auxiliary member 20 is provided with a mask hole 21, and the mask hole 21 communicates with the receiving groove 12, and the mask hole 21 is along the mask hole.
  • a shielding portion 213 is provided in the circumferential direction of the cover 21, and the shielding portion 213 blocks the edge of the accommodating groove 12.
  • the mask hole 21 is a through hole formed in the mask auxiliary member 20, and the shielding portion 213 can cover the partial receiving groove 12. Therefore, when the solar cell wafer 40 is loaded in the receiving groove 12, the mask is masked.
  • the edge of the solar cell wafer 40 is blocked by the shielding portion 213 on the mask auxiliary member 20.
  • the edge of the solar cell wafer 40 is blocked by 0.5 ⁇ 0.01 mm.
  • the shielding portion 213 is formed by a portion of the mask auxiliary member 20 surrounding the mask hole 21.
  • the solar cell wafer 40 is square, so that the receiving groove 12 and the mask hole 21 are also square. Since the shielding portion 213 needs to block the edge of the accommodating groove 12, and the mask auxiliary member 20 is covered on the accommodating groove 12, the vertical hole portion 211 (which will be described later in detail) is engaged with the accommodating groove 12, and thus the vertical hole
  • the side length of the segment 211 needs to be smaller than the side length of the receiving groove 12. As described above, the edge of the solar cell wafer 40 is shielded by about 0.5 mm, and the volume of the receiving groove 12 is adapted to the volume of the solar cell wafer 40. Therefore, the side length of the receiving groove 12 is required to be larger than the vertical hole segment 211. The side length is set to 1 mm.
  • the side length of the vertical hole section 211 should be shorter than the side length of the solar cell wafer 40 by 1 mm.
  • the side length of the accommodating groove 12 needs to be described by setting a value of 1 mm larger than the side length of the vertical hole section 211.
  • the solar cell wafer 40 is in the shape of a circle, a diamond or the like, the shape of the receiving groove 12 needs to be adjusted accordingly.
  • the mask hole 21 includes a vertical hole section 211 and a flared hole section 212.
  • the area of the cross section of the flared hole section 212 near one end of the vertical hole section 211 is smaller than the area of the cross section away from the end of the vertical hole section 211.
  • the area of the cross section of the vertical hole section 211 is smaller than the area of the cross section of the receiving groove 12.
  • the occluded portion is not masked, and the remaining portion is masked through the mask hole 21, and the structure is provided while ensuring the structural strength of the mask auxiliary member 20,
  • the edge and the side of the silicon wafer of the solar cell are prevented from being coated, thereby avoiding the subsequent operation of insulating the side of the silicon wafer of the solar cell, thereby reducing the occurrence of silicon wafer fragmentation and improving the silicon wafer of the solar cell.
  • the yield is improved and the production efficiency is improved.
  • the solar cell wafer carrier provided by the embodiment of the present disclosure, when the solar cell wafer 40 is transferred, the solar cell wafer 40 is loaded into the solar cell wafer carrier, so that the solar cell wafer 40 can be subjected to transmission.
  • the protection avoids the problem that the solar cell wafer 40 is broken.
  • the solar cell wafer 40 is loaded into the accommodating groove 12 of the tray 10, and the mask auxiliary member 20 is attached to the tray 10.
  • the mask hole 21 provided on the mask auxiliary member 20 can assist the solar cell wafer 40 to be coated.
  • the shielding portion 213 blocks part of the receiving groove 12, thereby preventing the edge and the side of the solar cell wafer 40 from being coated, thereby avoiding the need to subsequently insulate the side of the solar cell wafer 40.
  • the operation further reduces the occurrence of the breakage of the solar cell wafer 40, improves the yield of the solar cell wafer 40, and improves the production efficiency.
  • the solar cell wafer carrying device may further include a bottom plate 30 for carrying the tray 10, and the bottom plate 30 can carry at least two trays 10.
  • the bottom plate 30 can carry a plurality of trays 10, so that a plurality of solar cell wafers 40 can be simultaneously transported without collision and the like. Referring to FIG. 1, it can be seen that a plurality of (56) trays 10 are placed on the bottom plate 30.
  • a unique identification code can be placed on each of the backplanes 30 for scheduling and identification on the transmission line.
  • the tray 10 is fixedly coupled to the upper surface of the bottom plate 30.
  • the tray 10 can be fixed to the bottom plate 30 by fasteners such as bolts and screws.
  • the tray 10 can also be coupled to the bottom plate 30 by a locating pin 50.
  • a positioning pin 50 may be disposed on the bottom plate 30, and the positioning hole is formed in the tray 10, and the positioning hole cooperates with the positioning pin 50.
  • the positioning pin 50 is first inserted into the positioning hole to achieve positioning, and then fixed by using a fastener, which can improve the assembly efficiency of the tray 10.
  • the tray 10 can be integrally formed with the bottom plate 30.
  • the embodiment of the present disclosure further provides a solar cell wafer transfer system, including the solar cell wafer carrier provided by any embodiment of the present disclosure.
  • the solar cell wafer carrier device is placed on a transmission crawler and the like, and then the solar cell wafer 40 is placed in the solar cell wafer carrier to facilitate the solar cell wafer 40. Transmission.

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一种太阳能电池硅片承载装置以及传输系统，其中太阳能电池硅片承载装置包括托盘和掩膜辅助件，托盘的一侧表面上设置有隔空槽和容纳槽。隔空槽和容纳槽成台阶状分布，且隔空槽位于容纳槽的下方。掩膜辅助件盖合于容纳槽上，掩膜辅助件上开设有掩膜孔，掩膜孔与容纳槽相通，且掩膜孔沿其周向设置有遮挡部，遮挡部遮挡容纳槽的边沿。

Description

太阳能电池硅片承载装置以及传输系统
相关申请的交叉引用
本申请要求2017年11月16日在中国国家知识产权局提交的中国专利申请No.201721539658.5的优先权，该申请的全部内容以引用方式并入本文。
技术领域
本公开涉及工件的装载技术领域，尤其涉及一种太阳能电池硅片承载装置以及传输系统。
背景技术
太阳能电池是基于光生伏特效应开发出来的一种光电转换器件，目前国际光伏市场上的太阳能电池主要有晶体硅(包括单晶硅、多晶硅)、非晶/单晶异质结(HIT)、非晶硅薄膜、碲化镉(CdTe)薄膜及铜铟硒(CIS)薄膜太阳能电池等。
在诸如晶体硅和HIT等太阳能电池的生产制造过程中，硅片是主要的原材料，而核心的工艺是通过PVD、PECVD等工艺在硅片的表面沉积一层或多层固态薄膜。由于硅片尺寸较小(一个典型的尺寸实例为约156mm×156mm×0.18mm)且易碎，因此，在加工太阳能电池的过程中，需要保证硅片的传输稳定性和定位可靠性。
目前，硅片的传输采用传输带直接传送，很容易导致硅片破碎，从而造成不可挽回的损失。
另外，太阳能电池的镀膜过程一般为在硅片或衬底上沉积多层膜层，而在镀膜的过程中，膜层也会沉积在膜层的侧面，为了避免后续各膜层之间产生漏电现象，需要对镀膜完成后的电池片的侧面进行绝缘处理。
目前，对电池片的侧面进行绝缘处理的方式为利用打磨工具将电池片侧面的膜层打磨掉，然而该打磨过程容易造成电池片的破损，降低生产效率。
公开内容
本公开的目的是提供一种太阳能电池硅片承载装置以及传输系统，以至少部分解决上述问题，使太阳能电池硅片传输时受到保护，并且在镀膜过程中避免太阳能电池的侧面镀膜，进而避免太阳能电池硅片破碎。
根据本公开的一方面，提供一种太阳能电池硅片承载装置，包括：托盘，所述托盘的一侧表面上设置有隔空槽和容纳槽，所述隔空槽和所述容纳槽成台阶状分布，且所述隔空槽位于所述容纳槽的下方；掩膜辅助件，所述掩膜辅助件盖合于所述容纳槽上，所述掩膜辅助件上开设有掩膜孔，所述掩膜孔与所述容纳槽相通，且所述掩膜孔沿其周向设置有遮挡部，所述遮挡部遮挡所述容纳槽的边沿。
在一示例性实施例中，所述太阳能电池硅片承载装置还包括用于承载所述托盘的底板，所述底板至少能承载两个所述托盘。
在一示例性实施例中，所述托盘固定连接于所述底板的上表面上。
在一示例性实施例中，所述底板上设置有识别码。
在一示例性实施例中，所述托盘通过定位销与底板连接。
在一示例性实施例中，所述底板和所述托盘一体成型。
在一示例性实施例中，所述容纳槽和所述掩膜孔的形状均为方形，且在所述掩膜辅助件盖合于所述容纳槽上时，所述容纳槽的横向中心轴和纵向中心轴分别与所述掩膜孔的横向中心轴和纵向中心轴相重合。
在一示例性实施例中，所述掩膜孔包括竖直孔段和扩口孔段，所述扩口孔段靠近所述竖直孔段的一端的横截面的面积小于远离所述竖直孔段的一端的横截面的面积；所述竖直孔段的横截面的面积小于所述容纳槽的横截面的面积；并且当所述掩膜辅助件盖合于所述容纳槽上时，所述竖直孔段与所述容纳槽相配合。
在一示例性实施例中，所述容纳槽的边长比所述竖直孔段的边长大设定值。
在一示例性实施例中，所述隔空槽中设置有支撑台，所述支撑台的上端面与所述容纳槽的底端相平齐。
根据本公开的另一方面，提供一种太阳能电池硅片传输系统，包括上述任一所述太阳能电池硅片承载装置。
附图说明
图1为本公开实施例中的太阳能电池硅片承载装置的结构示意图；
图2为本公开实施例中的太阳能电池硅片承载装置的托盘的剖面图；
图3为本公开实施例中的太阳能电池硅片承载装置的托盘和托盘所装载的太阳能电池硅片的剖面图；
图4为本公开实施例中的太阳能电池硅片承载装置的掩膜辅助件的剖面图；并且
图5为本公开实施例中的太阳能电池硅片承载装置的使用状态的剖面图。
具体实施方式
下面详细描述本公开的实施例，实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本公开，而不能解释为对本公开的限制。
如图1至图5所示，本公开实施例提供的太阳能电池硅片承载装置，包括托盘10和掩膜辅助件20。图1中有两个托盘10和两个掩膜辅助件20处于分体状态，其余的托盘10和掩膜辅助件20处于相互配合状态。
其中，请参考图2和图3，托盘10的一侧表面上设置有隔空槽11和容纳槽12，隔空槽11和容纳槽12成台阶状分布，且隔空槽11位于容纳槽12的下方。优选地，容纳槽12的横截面的面积大于隔空槽11的横截面的面积，从而使得容纳槽12与隔空槽11之间形成可以支撑太阳能电池硅 片40的台阶。容纳槽12用于容纳太阳能电池硅片40。如图3所示，太阳能电池硅片40被放置在容纳槽12与隔空槽11之间的台阶上。隔空槽11使得太阳能电池硅片40放置于容纳槽12中时成架空状态，从而便于机械手拿取太阳能电池硅片40。优选地，上述容纳槽12的体积与需要容纳的太阳能电池硅片40的体积相适应。优选地，太阳能电池硅片40的边沿与容纳槽12的侧壁间隙配合。优选地，容纳槽12中设置有限位部121，该限位部121即为容纳槽12的侧壁。
优选地，为了避免损伤太阳能电池硅片40，容纳槽12的深度略大于太阳能电池硅片40的厚度。此外，优选地，如图5所示，为了更好的支撑太阳能电池硅片40，避免太阳能电池硅片40的中部因没有支撑从而导致变形，在隔空槽11中设置有支撑台111，该支撑台111的上端面与容纳槽12的底端相平齐。太阳能电池硅片40放置于容纳槽12中时，其中部支撑于支撑台111上，从而避免了形变。优选地，可根据太阳能电池硅片的尺寸设计支撑台的数量。此外，支撑台111可以与托盘10一体成型。
请参考图4，掩膜辅助件20盖合于容纳槽12上，掩膜辅助件20上开设有掩膜孔21，掩膜孔21与容纳槽12相通，且掩膜孔21沿掩膜孔21的周向设置有遮挡部213，遮挡部213遮挡容纳槽12的边沿。请参考图5，掩膜孔21为开设在掩膜辅助件20上的通孔，遮挡部213能遮盖部分容纳槽12，因此，太阳能电池硅片40装载于容纳槽12中时，将掩膜辅助件20盖合至托盘10上后，太阳能电池硅片40的边缘被掩膜辅助件20上的遮挡部213遮挡。优选地，请参考图5，太阳能电池硅片40的边缘被遮挡0.5±0.01mm。在本实施例的一个实例中，遮挡部213由掩膜辅助件20的围绕掩膜孔21的一部分形成。
一般情况下，太阳能电池硅片40为方形，因此相适应地，容纳槽12和掩膜孔21也为方形。由于遮挡部213需要遮挡容纳槽12的边沿，而掩膜辅助件20盖合于容纳槽12上时，竖直孔段211(将在下文中详述)与容纳槽12相配合，因此竖直孔段211的边长需要小于容纳槽12的边长。上述已经说明，太阳能电池硅片40的边沿要被遮挡约0.5mm，而容纳槽12的体积与太阳能电池硅片40的体积相适应，因此，容纳槽12的边长需比竖 直孔段211的边长大设定值1mm。应当理解的是，当掩膜辅助件20盖合于容纳槽12上时，容纳槽12横向中心轴和纵向中心轴分别与掩膜孔21的横向中心轴和纵向中心轴相重合。如此可以保证太阳能电池硅片40每一个边沿均被遮挡0.5mm。严格来讲，应当为竖直孔段211的边长比太阳能电池硅片40的边长短1mm，然而由于容纳槽12的体积与太阳能电池硅片40的体积相适应，因此，上述描述中均以容纳槽12的边长需比竖直孔段211的边长大设定值1mm来描述。当然，若太阳能电池硅片40为圆形、菱形等其他形状时，容纳槽12的形状也需做出相应的调整。
优选地，掩膜孔21包括竖直孔段211和扩口孔段212。扩口孔段212靠近竖直孔段211的一端的横截面的面积小于远离竖直孔段211的一端的横截面的面积。竖直孔段211的横截面的面积小于容纳槽12的横截面的面积。掩膜辅助件20盖合于容纳槽12上时，竖直孔段211与容纳槽12相配合。也即竖直孔段211与容纳槽12直接相通。由于竖直孔段211的横截面的面积小于容纳槽12的横截面的面积，而容纳槽12的体积与太阳能电池硅片40的体积相适应，因此，太阳能电池硅片40的边缘被遮挡。
在对太阳能电池硅片40进行掩膜时，被遮挡的部分不进行掩膜，其余部分通过掩膜孔21进行掩膜，该种结构设置在保证了掩膜辅助件20的结构强度的同时，避免太阳能电池硅片的边缘和侧边被镀膜，从而避免后续需要对太阳能电池硅片的侧边进行绝缘处理的操作，进而减少了太阳能电池硅片破碎的现象发生，提高了太阳能电池硅片的成品率，提高了生产效率。
利用本公开实施例提供的太阳能电池硅片承载装置，在传输太阳能电池硅片40时，将太阳能电池硅片40装载于太阳能电池硅片承载装置中，可以使太阳能电池硅片40在传输时受到保护，避免了太阳能电池硅片40破碎的问题发生。在对太阳能电池硅片40镀膜前，将太阳能电池硅片40装载于托盘10的容纳槽12中，并将掩膜辅助件20盖合至托盘10上。掩膜辅助件20上设置的掩膜孔21可以辅助太阳能电池硅片40镀膜。在对太阳能电池硅片40镀膜时，遮挡部213遮挡部分容纳槽12，从而避免太阳能电池硅片40的边缘和侧边被镀膜，避免后续需要对太阳能电池硅片40 的侧边进行绝缘处理的操作，进而减少了太阳能电池硅片40破碎的现象发生，提高了太阳能电池硅片40的成品率，提高了生产效率。
进一步地，为了提高传输效率，太阳能电池硅片承载装置还可包括用于承载托盘10的底板30，底板30至少能承载两托盘10。底板30可以承载多个托盘10，可以实现多个太阳能电池硅片40同时传输，且相互之间不会发生碰撞等问题。请参考图1，可见底板30上放置有多个(56个)托盘10。
在传输时，为了便于识别不同的底板30，还可以在每一个底板30上设置唯一的识别码，以便于传输线上进行调度和识别。
优选地，为进一步增加稳固性，托盘10固定连接于底板30的上表面上。托盘10可以通过螺栓、螺钉等紧固件固定于底板30上。
托盘10也可以通过定位销50与底板30连接。例如，可以在底板30上设置定位销50，托盘10上开设有定位孔，定位孔与定位销50相配合。使用时，先将定位销50插在定位孔中，以实现定位，然后再使用紧固件进行固定，可以提高托盘10的装配效率。在一个实施例中，托盘10可以和底板30一体成型。
本公开实施例还提供了一种太阳能电池硅片传输系统，包括本公开任意实施例提供的太阳能电池硅片承载装置。在需要传输太阳能电池硅片40时，将太阳能电池硅片承载装置放置于传输履带等设备上，然后再将太阳能电池硅片40放置于太阳能电池硅片承载装置中，从而便于太阳能电池硅片40的传输。
以上依据图式所示的实施例详细说明了本公开的构造、特征及作用效果，以上仅为本公开的较佳实施例，但本公开不以图面所示限定实施范围，凡是依照本公开的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本公开的保护范围内。
附图标记说明：
10-托盘      11-隔空槽      111-支撑台  12-容纳槽
121-限位部   20-掩膜辅助件  21-掩膜孔   211-竖直孔段
212-扩口孔段  213-遮挡部  30-底板  40-太阳能电池硅片
50-定位销

Claims (11)

  1. 一种太阳能电池硅片承载装置，包括：
    托盘，所述托盘的一侧表面上设置有隔空槽和容纳槽，所述隔空槽和所述容纳槽成台阶状分布，且所述隔空槽位于所述容纳槽的下方；以及
    掩膜辅助件，所述掩膜辅助件盖合于所述容纳槽上，所述掩膜辅助件上开设有掩膜孔，所述掩膜孔与所述容纳槽相通，且所述掩膜孔沿其周向设置有遮挡部，所述遮挡部遮挡所述容纳槽的边沿。
  2. 根据权利要求1所述的太阳能电池硅片承载装置，还包括用于承载所述托盘的底板，所述底板至少能承载两个所述托盘。
  3. 根据权利要求2所述的太阳能电池硅片承载装置，其中，所述托盘固定连接于所述底板的上表面上。
  4. 根据权利要求2所述的太阳能电池硅片承载装置，其中，所述底板上设置有识别码。
  5. 根据权利要求2所述的太阳能电池硅片承载装置，其中，所述托盘通过定位销与所述底板连接。
  6. 根据权利要求2所述的太阳能电池硅片承载装置，其中，所述底板和所述托盘一体成型。
  7. 根据权利要求1-6中任一项所述的太阳能电池硅片承载装置，其中，所述容纳槽和所述掩膜孔的形状均为方形；并且
    所述掩膜辅助件盖合于所述容纳槽上时，所述容纳槽的横向中心轴和纵向中心轴分别与所述掩膜孔的横向中心轴和纵向中心轴相重合。
  8. 根据权利要求7所述的太阳能电池硅片承载装置，其中，所述掩膜孔包括竖直孔段和扩口孔段，所述扩口孔段靠近所述竖直孔段的一端的横截面的面积小于远离所述竖直孔段的一端的横截面的面积；
    所述竖直孔段的横截面的面积小于所述容纳槽的横截面的面积；并且
    所述掩膜辅助件盖合于所述容纳槽上时，所述竖直孔段与所述容纳槽相配合。
  9. 根据权利要求8所述的太阳能电池硅片承载装置，其中，所述容纳槽12的边长比所述竖直孔段211的边长大设定值。
  10. 根据权利要求1-6中任一项所述的太阳能电池硅片承载装置，其中，所述隔空槽中设置有支撑台，所述支撑台的上端面与所述容纳槽的底端相平齐。
  11. 一种太阳能电池硅片传输系统，包括：如权利要求1-10中任一项所述的太阳能电池硅片承载装置。
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