JP5632616B2 - 半導体装置の製造方法及び基板収容構造 - Google Patents
半導体装置の製造方法及び基板収容構造 Download PDFInfo
- Publication number
- JP5632616B2 JP5632616B2 JP2010014518A JP2010014518A JP5632616B2 JP 5632616 B2 JP5632616 B2 JP 5632616B2 JP 2010014518 A JP2010014518 A JP 2010014518A JP 2010014518 A JP2010014518 A JP 2010014518A JP 5632616 B2 JP5632616 B2 JP 5632616B2
- Authority
- JP
- Japan
- Prior art keywords
- tray
- substrate
- secondary electron
- semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68313—Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (13)
- トレー上に2次電子吸収材を配置し、半導体素子が形成された素子形成面を有する半導体基板を、前記素子形成面が前記2次電子吸収材と対向するように前記2次電子吸収材上に配置して前記トレーに収容する工程と、
前記半導体基板に前記トレー側とは反対側から荷電粒子線を、該荷電粒子線の一部が前記半導体基板を貫通するように、照射して前記半導体基板内に格子欠陥を形成する工程と、
を備えることを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記トレーは、
前記2次電子吸収材を収容する凹部と、
前記凹部の周縁を囲むように形成された、前記半導体基板の端部を支持する基板収容部と、
を有することを特徴とする半導体装置の製造方法。 - 請求項1または2に記載の半導体装置の製造方法であって、前記2次電子吸収材は、ポリエチレン樹脂またはアルミニウム箔を含むことを特徴とする半導体装置の製造方法。
- 請求項1または2に記載の半導体装置の製造方法であって、前記2次電子吸収材は、無塵加工された紙をポリエチレン樹脂でコーティングしたものであることを特徴とする半導体装置の製造方法。
- 請求項1から4のうちのいずれか1項に記載の半導体装置の製造方法であって、前記荷電粒子線は電子線であることを特徴とする半導体装置の製造方法。
- 請求項1から5のうちのいずれか1項に記載の半導体装置の製造方法であって、前記荷電粒子線を照射する工程が実行された後に前記半導体基板に熱処理を施す工程をさらに含むことを特徴とする半導体装置の製造方法。
- 請求項1から6のうちのいずれか1項に記載の半導体装置の製造方法であって、前記2次電子吸収材は、前記半導体基板の前記トレー側の面を保護する保護シートに含まれることを特徴とする半導体装置の製造方法。
- 荷電粒子線を、該荷電粒子線の一部が半導体基板を貫通するように照射して、半導体素子が形成された素子形成面を有する半導体基板内に格子欠陥を形成する粒子線照射装置で使用される、基板収容構造であって、
前記半導体基板が収容されるトレーと、
前記半導体基板と前記トレーとの間に介在するように前記トレー上に配置された2次電子吸収材と、
を備え、
前記半導体基板は、前記素子形成面が前記2次電子吸収材と対向するように前記トレーに収容される
ことを特徴とする基板収容構造。 - 請求項8に記載の基板収容構造であって、
前記トレーは、
前記2次電子吸収材を収容する凹部と、
前記凹部の周縁を囲むように形成された、前記半導体基板の端部を支持する基板収容部と、
を有することを特徴とする基板収容構造。 - 請求項8または9に記載の基板収容構造であって、前記2次電子吸収材は、ポリエチレン樹脂またはアルミニウム箔を含むことを特徴とする基板収容構造。
- 請求項8または9に記載の基板収容構造であって、前記2次電子吸収材は、無塵加工された紙をポリエチレン樹脂でコーティングしたものであることを特徴とする基板収容構造。
- 請求項8から11のうちのいずれか1項に記載の基板収容構造であって、前記2次電子吸収材は、前記半導体基板の前記トレー側の面を保護する保護シートに含まれることを特徴とする基板収容構造。
- 請求項8から12のうちのいずれか1項に記載の基板収容構造であって、
前記トレーに収容された前記半導体基板と、
前記トレー、前記2次電子吸収材及び前記半導体基板を真空包装する包装材と、
をさらに備えることを特徴とする基板収容構造。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010014518A JP5632616B2 (ja) | 2010-01-26 | 2010-01-26 | 半導体装置の製造方法及び基板収容構造 |
US13/009,673 US8216919B2 (en) | 2010-01-26 | 2011-01-19 | Method of manufacturing a semiconductor device and substrate carrier structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010014518A JP5632616B2 (ja) | 2010-01-26 | 2010-01-26 | 半導体装置の製造方法及び基板収容構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011155068A JP2011155068A (ja) | 2011-08-11 |
JP5632616B2 true JP5632616B2 (ja) | 2014-11-26 |
Family
ID=44309268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010014518A Active JP5632616B2 (ja) | 2010-01-26 | 2010-01-26 | 半導体装置の製造方法及び基板収容構造 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8216919B2 (ja) |
JP (1) | JP5632616B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010005047B4 (de) * | 2010-01-20 | 2014-10-23 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit mindestens einem Leistungshalbleitermodul und mit einer Transportverpackung |
DE102010005048A1 (de) * | 2010-01-20 | 2011-07-21 | SEMIKRON Elektronik GmbH & Co. KG, 90431 | Anordnung mit mindestens einem Leistungshalbleitermodul und mit einer Transportverpackung |
US9576868B2 (en) * | 2012-07-30 | 2017-02-21 | General Electric Company | Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices |
US9691901B2 (en) * | 2015-10-02 | 2017-06-27 | United Microelectronics Corp. | Semiconductor device |
US20200180840A1 (en) * | 2017-03-08 | 2020-06-11 | Jx Nippon Mining & Metals Corporation | Vacuum-packaged product of high-purity metal and method for producing vacuum-packaged product |
CN207425825U (zh) * | 2017-11-16 | 2018-05-29 | 君泰创新(北京)科技有限公司 | 太阳能电池硅片承载装置以及传输系统 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0472736A (ja) * | 1990-07-13 | 1992-03-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH04177827A (ja) * | 1990-11-13 | 1992-06-25 | Hitachi Ltd | イオン打ち込み方法および装置 |
JPH07226405A (ja) * | 1994-12-19 | 1995-08-22 | Meidensha Corp | 半導体デバイスの製造方法 |
JPH08244877A (ja) * | 1995-03-03 | 1996-09-24 | Oki Electric Ind Co Ltd | 半導体素子の搬送及び保管用トレイ |
JPH0922929A (ja) * | 1995-07-04 | 1997-01-21 | Ricoh Co Ltd | Bgaパッケージ半導体素子及びその検査方法 |
JPH09172059A (ja) * | 1995-12-18 | 1997-06-30 | Nippon Precision Circuits Kk | Ic用チップトレイ |
US6080605A (en) * | 1998-10-06 | 2000-06-27 | Tessera, Inc. | Methods of encapsulating a semiconductor chip using a settable encapsulant |
JP3014689B1 (ja) * | 1999-02-12 | 2000-02-28 | 株式会社日立製作所 | 電子ビ―ム描画装置 |
US6475432B2 (en) * | 2000-08-15 | 2002-11-05 | Ion Beam Applications, Inc. | Carrier and support for work pieces |
JP2001358147A (ja) * | 2001-05-25 | 2001-12-26 | Sanken Electric Co Ltd | 半導体装置の製造方法 |
JP2003168731A (ja) | 2001-12-03 | 2003-06-13 | M B K Micro Tec:Kk | 基板トレー、基板トレー敷設用シート及び基板収納方法 |
JP2006290411A (ja) * | 2005-04-12 | 2006-10-26 | Sharp Corp | 半導体装置収納体、アルミ箔製包装袋およびこれを用いた半導体装置収納構造 |
US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
TWI437696B (zh) * | 2007-09-21 | 2014-05-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
WO2011043182A1 (en) * | 2009-10-05 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for removing electricity and method for manufacturing semiconductor device |
-
2010
- 2010-01-26 JP JP2010014518A patent/JP5632616B2/ja active Active
-
2011
- 2011-01-19 US US13/009,673 patent/US8216919B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8216919B2 (en) | 2012-07-10 |
US20110183496A1 (en) | 2011-07-28 |
JP2011155068A (ja) | 2011-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5632616B2 (ja) | 半導体装置の製造方法及び基板収容構造 | |
US9070658B2 (en) | Semiconductor device and method for manufacturing semiconductor device | |
KR101905197B1 (ko) | 금속-세라믹 기판용 패키지 및 이러한 기판의 패키징 방법 | |
US20160315293A1 (en) | Method of cutting substrate and method of manufacturing display apparatus | |
US20080079119A1 (en) | Semiconductor device and method for manufacturing the same | |
US20150008154A1 (en) | Packaging system for protection of ic wafers during fabrication, transport and storage | |
JP7003688B2 (ja) | 半導体装置及びその製造方法 | |
US11540892B2 (en) | Packaged medical device and method for manufacturing packaged medical device | |
JP2011129619A (ja) | 半導体装置の製造方法 | |
WO2016026685A1 (en) | An organic conversion device | |
US11810780B2 (en) | Silicon doping for laser splash blockage | |
JP6212818B2 (ja) | 処理液供給装置、基板処理装置、処理液供給方法および基板処理方法 | |
JPS60106150A (ja) | 耐放射線パツケ−ジ | |
JPS62125651A (ja) | 耐放射線パツケ−ジ | |
KR102527033B1 (ko) | 웨이퍼의 가공 방법 | |
JP3239634U (ja) | 半導体ウェハ梱包装置 | |
JP2016533034A (ja) | 電磁照射によって基板から構造を分離するための、処理、スタック、およびアセンブリ | |
CN220751989U (zh) | 一种过滤x射线辐射托盘装置 | |
JP6569564B2 (ja) | 半導体装置の製造方法 | |
JPWO2018139667A1 (ja) | ピックアップ装置およびピックアップ方法 | |
TW200939328A (en) | Avoiding electrical shorts in packaging | |
KR102515262B1 (ko) | 정전척, 진공처리장치 및 기판처리방법 | |
US9390968B2 (en) | Low temperature thin wafer backside vacuum process with backgrinding tape | |
US11515161B2 (en) | Low defect nuclear transmutation doping in nitride-based semiconductor materials | |
JP2004273863A (ja) | 半導体ウエハの製造法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121226 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140131 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140225 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140425 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140916 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141010 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5632616 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |