WO2019093133A1 - Procédé et véhicule pour diviser un substrat ayant un dispositif formé sur celui-ci en puces individuelles - Google Patents

Procédé et véhicule pour diviser un substrat ayant un dispositif formé sur celui-ci en puces individuelles Download PDF

Info

Publication number
WO2019093133A1
WO2019093133A1 PCT/JP2018/039580 JP2018039580W WO2019093133A1 WO 2019093133 A1 WO2019093133 A1 WO 2019093133A1 JP 2018039580 W JP2018039580 W JP 2018039580W WO 2019093133 A1 WO2019093133 A1 WO 2019093133A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
cutting
processing
back surface
dividing line
Prior art date
Application number
PCT/JP2018/039580
Other languages
English (en)
Japanese (ja)
Inventor
明 福永
学 辻村
Original Assignee
株式会社荏原製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社荏原製作所 filed Critical 株式会社荏原製作所
Publication of WO2019093133A1 publication Critical patent/WO2019093133A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present application relates to a method and apparatus for dividing a substrate on which a device is formed into individual chips.
  • a semiconductor wafer in which devices such as IC and LSI are formed in a matrix is formed by a functional layer in which an insulating film and a functional film are stacked on the surface of a semiconductor substrate such as silicon.
  • the semiconductor wafer formed in this manner is divided by the planned dividing lines in which the devices are formed in a lattice. Individual semiconductor devices are manufactured by dividing along the dividing lines.
  • the width of the planned dividing line is required to be about 50 ⁇ m.
  • the depth of focus can not be obtained in order to narrow the division width.
  • the heat generated by the laser can damage the device.
  • the street width becomes narrower, the possibility that a slight chipping (chipping) caused by cutting may be transmitted to the device portion increases, resulting in a defect. Therefore, there is a need for a dicing method that can obtain a high yield even when cutting chips with a narrower width. Further, if the chip size is small, the dicing distance becomes long, and therefore, improvement in productivity is required.
  • Mode 1 there is provided a method of dividing a substrate on which a device is formed into individual chips.
  • the step of supplying the working fluid containing the oxidizing agent and the alkaline agent to the back side where the device of the substrate is not formed, and the feeding of the working fluid while dividing the substrate from the back side of the substrate The steps of: processing along a line; and processing the substrate along a planned dividing line from the surface on which the device of the substrate is formed.
  • the oxidizing agent of the processing fluid contains hydrogen peroxide.
  • the concentration of hydrogen peroxide in the processing fluid is 0.5% or more.
  • the concentration of hydrogen peroxide in the processing fluid is 1.0% or more.
  • the alkaline agent of the working fluid contains potassium hydroxide.
  • the concentration of the potassium hydroxide in the working fluid is in the range of 10% to 40%.
  • the alkaline agent of the working fluid contains tetramethyl ammonium hydroxide.
  • the concentration of tetramethylammonium hydroxide in the working fluid is in the range of 10% to 25%.
  • Mode 9 in the method according to any one of modes 1 to 8, the processing from the back surface of the substrate is cutting with a dicing blade.
  • the processing from the back surface of the substrate uses a laser.
  • the method according to any one of modes 1 to 10 further includes the step of grinding the entire back surface of the substrate before processing the back surface of the substrate.
  • the method according to mode 11 further includes the step of grinding the entire back surface of the substrate after grinding the entire back surface of the substrate.
  • Mode 13 in the method according to mode 11 or 12, before the entire back surface of the substrate is ground, knife edge prevention processing is performed on the peripheral portion where the device of the substrate is not formed. There is a step of applying.
  • the method according to any one of modes 1 to 13 includes the step of applying an adhesive tape to the back surface of the substrate after processing of the back surface, from the front surface of the substrate The step of processing cuts only the thickness of the device forming layer along the planned dividing line, and the method further processes the surface of the substrate and then pulls the adhesive tape to divide the planned substrate dividing line And dividing along.
  • a cutting device for dividing a substrate on which a device is formed into individual chips.
  • the cutting apparatus includes a first table for holding a back surface of the substrate upward, and a first cutting mechanism for forming a cutting groove along a planned dividing line on the back surface of the substrate held by the first table.
  • a supply mechanism for supplying an oxidizing agent and an alkaline agent to the back surface of the substrate held by the first table, a second table for holding the surface of the substrate upward, and the second table held by the second table And a second cutting mechanism for processing the surface of the substrate along a planned dividing line.
  • the first cutting mechanism includes a cutting blade.
  • the second cutting mechanism includes a cutting blade.
  • the first cutting mechanism includes a laser processing device.
  • the second cutting mechanism includes a laser processing device.
  • FIG. 1 is a perspective view schematically illustrating a cutting apparatus for dividing a substrate on which devices are formed into individual chips according to one embodiment. It is a figure which shows the working fluid supply mechanism of the cutting device with which the cutting device shown by FIG. 1 is equipped.
  • FIG. 6A is a perspective view and a partial cross-sectional view of a substrate to be processed according to one embodiment. It is a perspective view which shows the state by which the dicing tape was stuck on the surface of the board
  • FIG. 5 schematically illustrates a method of processing the backside of a substrate, according to one embodiment.
  • FIG. 7 schematically illustrates a method of processing a surface of a substrate, according to one embodiment.
  • FIG. 1 is a perspective view schematically illustrating a laser processing apparatus according to one embodiment.
  • FIG. 7 schematically illustrates a method of processing a surface of a substrate, according to one embodiment. It is a figure which shows roughly a mode when processing the back surface of a board
  • FIG. 8 schematically illustrates how a device-formed substrate is divided into individual chips by pulling a dicing tape according to one embodiment.
  • FIG. 8 schematically illustrates how a device-formed substrate is divided into individual chips by pulling a dicing tape according to one embodiment.
  • FIG. 6 is a flow chart that schematically illustrates a method of dividing a substrate on which devices are formed into individual chips, according to one embodiment.
  • FIG. 1 is a perspective view schematically illustrating a cutting apparatus for performing a method for dividing a substrate on which a device is formed into individual chips according to one embodiment.
  • the cutting device 1 shown in FIG. 1 is entirely covered by a device housing (not shown).
  • a chuck table 3 as a workpiece holding mechanism for holding a workpiece (substrate 100) is provided in the device housing.
  • the chuck table 3 is configured to be movable in two directions (X-axis direction and Y-axis direction) orthogonal to each other in a plane on which the substrate 100 is disposed, by a moving mechanism (not shown).
  • the chuck table 3 is configured to be rotatable in the XY plane by a rotation mechanism (not shown).
  • the chuck table 3 is provided with a clamp (not shown) for fixing an annular frame F which supports a substrate 100 described later as a workpiece via a dicing tape T.
  • the cutting device 1 shown in FIG. 1 includes a spindle unit 4 as a cutting mechanism.
  • the spindle unit 4 is configured to be movable in two orthogonal directions (X-axis direction and Y-axis direction) parallel to the plane of the substrate 100. Further, the spindle unit 4 is configured to be movable in a direction (Z-axis direction) perpendicular to the plane of the substrate 100.
  • the spindle unit 4 is mounted on a spindle housing 41 which is adjusted for movement in the X-axis direction, Y-axis direction and Z-axis direction, a rotary spindle 42 rotatably supported by the spindle housing 41, and the rotary spindle 42. And the cutting blade 43.
  • the rotating spindle 42 is configured to rotate by a servomotor (not shown).
  • the cutting blade 43 is composed of a disk-shaped base made of aluminum and an annular cutting blade having a thickness of, for example, 50 ⁇ m formed by nickel-plating diamond abrasive grains on the side surface of the outer periphery of the base. be able to.
  • the cutting device 1 in the illustrated embodiment includes a processing fluid supply mechanism 5 that supplies a processing fluid to a cutting portion formed by an annular cutting blade of a cutting blade 43.
  • the machining fluid supply mechanism 5 includes a machining fluid supply nozzle 531 for supplying machining fluid to a cutting location when the substrate is being cut by the cutting blade 43.
  • the machining fluid supply nozzle 531 can be configured to be movable in synchronization with the cutting blade 43.
  • the working fluid supply nozzle 531 may be attached to the spindle housing 41.
  • a plurality of machining fluid supply nozzles 531 may be provided, or may be provided on both sides of the cutting blade 43.
  • the cutting device 1 includes a control device 200.
  • Various operation mechanisms of the cutting device 1 such as the chuck table 3, the spindle unit 4, the machining fluid supply mechanism 5, and the imaging device 7 described later are connected to the control device 200, and these operations are controlled by the control device 200.
  • the control device 200 can be configured by, for example, a general-purpose computer or a dedicated computer provided with an input / output mechanism, a storage device, a processor, and the like.
  • the working fluid supply mechanism 5 includes a pure water storage tank 521 for storing pure water for forming the working fluid, an oxidizing agent storage tank 522 for storing an oxidizing agent, and an alkaline agent.
  • pure water storage tank 521 pure water conventionally used as a working fluid is stored.
  • the oxidant storage tank 522 can be, for example, a liquid containing hydrogen peroxide (for example, hydrogen peroxide water) as an oxidant.
  • hydrogen peroxide for example, hydrogen peroxide water
  • concentration of hydrogen peroxide is 0.5% by mass or more, more preferably 1.0% by mass or more.
  • peroxide, iodate, periodate, hypochlorite, chlorite, chlorate, perchlorate, persulfate, bichromate, permanganate Acid salts, cerates and ozone water can be used as an oxidant.
  • the alkaline agent storage tank 523 can be, for example, a liquid (for example, an aqueous solution thereof) containing potassium hydroxide or tetramethylammonium hydroxide as the alkaline agent.
  • the concentration of potassium hydroxide is preferably in the range of 10% by mass to 40% by mass.
  • the concentration of tetramethylammonium hydroxide is preferably in the range of 10% by mass to 25% by mass.
  • the anticorrosive agent stored in the anticorrosive agent storage tank 524 may be any one that prevents the corrosion of metal materials such as copper, cobalt and tungsten used as a wiring material, for example, a triazole anticorrosive such as benzotriazole, etc. It can be used.
  • the pure water storage tank 521, the oxidant storage tank 522, the alkali agent storage tank 523 and the anticorrosive storage tank 524 are connected via the electromagnetic flow control valves 521a, 522a, 523a and 524a, respectively. It is connected to the processing fluid storage tank 525.
  • this working fluid storage tank 525 by adjusting the electromagnetic flow control valves 521a, 522a, 523a, 524a, the pure water storage tank 521, the oxidant storage tank 522, the alkali agent storage tank 523 and the corrosion inhibitor storage tank 524
  • the ratio of the pure water, the oxidizing agent, the alkali agent, and the anticorrosive agent that constitute the working fluid stored in the working fluid storage tank 525 is arbitrary, but the concentration of each component should be in the above-mentioned range. desirable.
  • a stirrer 525a is disposed in the working fluid storage tank 525, and a liquid level meter 525b, a pH meter 525c, and an oxidation-reduction potentiometer 525d are provided to measure the liquid level, pH, and redox potential of the working liquid, respectively.
  • a stirrer 525a, a liquid level meter 525b, a pH meter 525c, an oxidation-reduction potentiometer 525d, and electromagnetic flow control valves 521a, 522a, 523a, and 524a are connected to the control device 200.
  • the control device 200 controls the operation of these devices, and receives signals from these measuring devices.
  • the controller 200 can be configured to maintain the component concentration of the processing fluid in a predetermined range by adjusting the electromagnetic flow control valves 521a, 522a, 523a, 524a based on the measurement value from the measuring device.
  • a working fluid storage tank 525 for storing a working fluid consisting of pure water, an oxidizing agent, an alkali agent and an anticorrosive is supplied to a working fluid supply nozzle 531 through a working fluid supply pump 526 and an electromagnetic flow control valve 526a. Ru.
  • the machining fluid supply pump 526 and the electromagnetic flow control valve 526a are connected to the control device 200, and the operation is controlled by the control device 200.
  • the illustrated working fluid supply mechanism 5 includes a working fluid receiving tray 530 that receives the working fluid jetted from the working fluid supply nozzle 531 and supplied to the cutting area by the cutting blade 43, and The processing liquid receiving container 527 for storing the processing liquid received by the liquid receiving tray 530, the liquid level gauge 527a disposed in the processing liquid receiving container 527, and the processing liquid received by the processing liquid receiving container 527
  • a processing fluid return pump 528 for returning to the storage tank 525 and a filter 529 disposed in a pipe connecting the processing fluid return pump 528 and the processing fluid storage tank 525 are provided.
  • the working fluid return pump 528 by operating the working fluid return pump 528, the working fluid supplied to the cutting area by the cutting blade 43 at the time of cutting operation and received by the working fluid receiving tray 530 and stored in the working fluid receiving container 527 is through the filter 529. Can be returned to the processing fluid storage tank 525.
  • the working fluid can be circulated by measuring the level of the working fluid stored in the working fluid receiving container 527 with the level gauge 527a and operating the working fluid return pump 528 based on the signal of the level gauge 527a. .
  • the above-mentioned electromagnetic flow control valves 521a, 522a, 523a, 524a are adjusted to adjust the pure water storage tank 521 and the oxidant storage tank 522.
  • the processing liquid storage tank 525 is supplied with pure water, an oxidizing agent, an alkali agent and an anticorrosive agent from the alkali agent storage tank 523 and the anticorrosive agent storage tank 524 so as to have respectively set concentrations.
  • the cutting device 1 images an object to be processed held on a chuck table 3 and an imaging device 7 for detecting a region to be cut by the cutting blade 43.
  • the imaging device 7 includes an illumination device, and an optical mechanism such as a microscope or a CCD camera.
  • the imaging device 7 preferably includes an infrared light source and an infrared camera that irradiates infrared light to the workpiece. This is to make it possible to detect a planned dividing line formed on the surface of a workpiece made of a semiconductor material or the like from the back surface of the workpiece.
  • the imaging device 7 can be configured the same as or similar to the alignment unit disclosed in Japanese Patent Laid-Open No. 7-75955 (Patent Document 3).
  • the cutting device 1 may also include a display device that displays an image captured by the imaging device 7.
  • FIG. 3 (a) is a perspective view of a substrate divided by the substrate dividing method according to one embodiment.
  • FIG. 3B is an enlarged sectional view of an essential part of the substrate 100 shown in FIG.
  • a plurality of devices 112 are formed on the surface 100a of a semiconductor substrate such as silicon having a thickness of 750 ⁇ m.
  • the type and number of devices 112 formed are arbitrary.
  • the devices 112 formed on the surface 100 a of the substrate 100 are partitioned by dividing lines 111.
  • the planned division line 111 may have any configuration as long as it can be optically recognized.
  • the planned dividing line 111 may be one which can recognize the space between the adjacent devices 112 in the above-described imaging device 7 as the planned dividing line 111.
  • a dicing tape T is attached to the surface 100a of the substrate 100, and a substrate supporting step of supporting the outer peripheral portion of the dicing tape T by an annular frame F is performed.
  • the surface 100 a of the substrate 100 is attached to the surface of the dicing tape T whose outer periphery is attached so as to cover the inner opening of the annular frame F. Therefore, the back surface 100 b of the substrate 100 attached to the front surface of the dicing tape T is on the upper side.
  • the substrate 100 supported by the annular frame F via the dicing tape T in this manner is disposed on the chuck table 3.
  • a suction mechanism (not shown) operates to suction and hold the substrate 100 on the chuck table 3. Further, an annular frame F supporting the substrate 100 via the dicing tape T is fixed by a clamp not shown.
  • the chuck table 3 holding the substrate 100 by suction in this manner is moved immediately below the imaging device 7.
  • the imaging device 7 detects the planned dividing line 111 formed on the surface 100 a of the substrate 100, and precise alignment between the planned dividing line 111 and the cutting blade 43. Perform work (alignment process).
  • the substrate 100 is a semiconductor substrate such as silicon (Si), gallium arsenide (GaAs), indium phosphide (InP) or the like, it has high transparency in the infrared region, and thus an infrared light source and an infrared camera are used as described above. By doing this, it is possible to detect the planned dividing line 111 formed on the surface 100 a even from the back surface 100 b of the substrate 100.
  • Si silicon
  • GaAs gallium arsenide
  • InP indium phosphide
  • FIG. 5A is a cross-sectional view showing how the back surface 100 b of the substrate 100 is processed by the cutting blade 43.
  • the lower end of the cutting blade 43 reaches the substrate 100 but does not reach the surface 100a of the substrate (the lower surface in FIG. 5). That is, the substrate 100 is not completely cut, and a groove is formed on the back surface 100b.
  • the depth of the cutting groove 130 can be 80% to 90% of the total thickness of the substrate 100 on which the device is formed.
  • FIG. 5B is a cross-sectional view showing a state in which the cutting groove 130 is formed on the back surface 100 b of the substrate 100 along the planned dividing line 111.
  • the above-described cutting process is performed until the cutting grooves 130 are formed along all the planned dividing lines 111.
  • the cutting groove 130 is formed at a position corresponding to the planned dividing line 111 formed on the surface 100 a of the substrate 100, but the width of the cutting groove 130 is arbitrary.
  • the cutting groove 130 may be wider than the planned dividing line 111 of the surface 100 a, may be similar to the planned dividing line 111, or may be narrower than the planned dividing line 111.
  • the processing liquid storage tank 525 is opened by opening the electromagnetic flow control valve 526 a constituting the processing liquid supply mechanism 5 and operating the processing liquid supply pump 526.
  • the stored machining fluid is supplied to the machining fluid supply nozzle 531.
  • the working fluid in which the pure water, the oxidizing agent, the alkali agent and the preservative are mixed in a desired ratio is supplied from the working fluid supply nozzle 531 to the cutting area by the cutting blade 43.
  • the working fluid in which the pure water, the oxidizing agent, the alkali agent and the anticorrosive are mixed is supplied to the cutting region by the cutting blade 43.
  • the etching action acts on the portion where the substrate 100 and the cutting blade 43 are in contact, and the cutting action by the mechanical action of the cutting blade 43 and the etching of the alkaline agent
  • the cutting groove 130 can be formed on the back surface 100 b of the substrate 100 by the chemical action.
  • the processing fluid contains an oxidizing agent, the exposed surface of the substrate 100 is rapidly oxidized, so that the portion not in contact with the cutting blade 43 is not etched. Therefore, only the part in contact with the cutting blade 43 can be selectively and efficiently mechanically and chemically cut.
  • the mechanical / chemical cutting according to the present embodiment has a processing speed higher than that of the mechanical cutting by the cutting blade 43 alone. Furthermore, since the processing solution contains an oxidizing agent and an alkali agent, dust is less likely to adhere to the back surface of the oxidized substrate, and cleaning of the substrate 100 after processing becomes easy. In addition, in alkali, the zeta potentials of many materials are negative, so that dust such as cutting chips is less likely to adhere to the substrate 100.
  • the substrate 100 is cut into individual chips by processing along the dividing lines 111 from the surface 100a of the substrate 100 next. Do. At this time, the dicing tape T attached to the surface 100 a of the substrate 100 is peeled off, the substrate 100 is inverted, and the dicing tape T is attached to the back surface 100 a of the substrate 100.
  • the processing of the surface 100 a of the substrate 100 can be performed by a method similar to the method of forming the cutting groove 130 on the back surface 100 b of the substrate 100 described above. An embodiment of such a cutting step will be described with reference to FIG. In addition, embodiment of the cutting process shown in FIG.
  • the thickness of the cutting blade 43 is formed to be, for example, 15 ⁇ m thinner than the thickness (50 ⁇ m) of the cutting blade 43 subjected to the cutting process on the back surface 100 b of the substrate 100.
  • the cutting process from the surface 100 a of the substrate 100 is performed in a state where the dicing tape T is attached to the back surface 100 b of the substrate 100.
  • the back surface 100 b of the substrate 100 is held by suction on the chuck table 3 as described above via the dicing tape T.
  • the chuck table 3 holding the substrate 100 by suction in this manner is moved immediately below the imaging device 7.
  • the imaging device 7 detects the planned dividing line 111 formed on the surface 100 a of the substrate 100, and precise alignment between the planned dividing line 111 and the cutting blade 43. Perform work (alignment process).
  • FIG. 7A is a cross-sectional view showing how the surface 100 a of the substrate 100 is processed by the cutting blade 43.
  • the lower end of the cutting blade 43 reaches the bottom of the cutting groove 130 formed on the back surface 100b of the substrate 100. Therefore, as shown in FIG. 7B, the substrate 100 is provided with a cutting groove 132 formed from the surface 100a of the substrate 100 in this step and a cutting groove 130 formed on the back surface 100b of the substrate 100 in the previous step. Cut by.
  • the processing liquid supplied to the cutting region in the cutting process from the surface 100 a of the substrate 100 may be pure water alone. By the cutting process, the substrate 100 is cut along the dividing lines 111 and divided into individual devices.
  • a laser processing apparatus 60 shown in FIG. 8 includes a chuck table 61 for holding a workpiece, a laser beam irradiation apparatus 62 for irradiating a laser beam to the workpiece held on the chuck table 61, and holding on the chuck table 61. And an imaging device 63 for imaging the processed workpiece.
  • the chuck table 61 is configured to suction and hold a workpiece.
  • the chuck table 61 is configured to be movable in two directions (X-axis direction and Y-axis direction) orthogonal to and parallel to the surface of the chuck table 61.
  • the laser beam irradiation apparatus 62 includes a cylindrical casing 621 disposed substantially horizontally. In the casing 621, a pulse laser beam oscillator (not shown) and a pulse laser beam oscillator equipped with a repetition frequency setting mechanism are provided. A condenser 622 for condensing the pulse laser beam oscillated from the pulse laser beam oscillation apparatus is attached to the tip of the casing 621.
  • the laser beam irradiation device 62 is provided with a focusing point position adjusting mechanism (not shown) for adjusting the focusing point position of the pulse laser beam focused by the light collector 622.
  • the imaging device 63 mounted on the tip of the casing 621 constituting the laser beam irradiation device 62 includes an illumination device for illuminating a workpiece, an optical system for capturing an area illuminated by the illumination device, and the optical system An imaging device (CCD) or the like for capturing a captured image is provided, and the captured image signal is sent to a control device (not shown).
  • a control device not shown
  • the cutting process using the laser processing apparatus 60 described above is performed in a state where the dicing tape T is attached to the back surface 100 b of the substrate 100.
  • the dicing tape T side of the substrate 100 on which the cutting process of the back surface 100 b of the substrate 100 shown in FIG. 5 is performed is placed on the chuck table 61.
  • the substrate 100 is sucked and held on the chuck table 61 via the dicing tape T by operating a suction mechanism (not shown) (wafer holding step).
  • the annular frame F to which the dicing tape T is attached is omitted in FIG. 8, the annular frame F is held by an appropriate frame holding mechanism provided on the chuck table 61.
  • the chuck table 61 holding the substrate 100 by suction is positioned directly below the imaging device 63 by the moving mechanism (not shown).
  • the imaging device 63 and a control device execute an alignment operation for detecting a processing region of the substrate 100 to be laser-processed. That is, the imaging device 63 and a control device (not shown) are patterns for aligning the planned division line 111 formed in the predetermined direction of the substrate 100 with the condenser 622 of the laser beam irradiation device 62 that emits the laser beam. Image processing such as matching is performed to perform alignment of the laser beam irradiation position (alignment step). The alignment of the laser beam irradiation position is similarly performed on the planned dividing lines 111 formed on the substrate 100 in the direction orthogonal to the predetermined direction.
  • FIG. 9A is a cross-sectional view showing a state where the laser processing groove 133 is formed along the planned dividing line 11 by the laser beam irradiation device 62.
  • FIG. 9B is a cross-sectional view showing the modified layer 134 formed along the planned dividing line 11 by the laser beam irradiation device 62.
  • the substrate 100 is cut by the laser processed groove 133 or the modifying layer 134 formed along the planned dividing line 111.
  • the substrate 100 is cut along the planned division lines 111 and divided into individual devices.
  • FIG. 10 is a view schematically showing a state in which the cutting groove 130 is formed by processing the back surface 100 b of the substrate 100 with a laser.
  • the processing of the back surface 100b of the substrate 100 by a laser can be performed using an apparatus similar to or similar to the laser processing apparatus 60 shown in FIG.
  • a step of grinding the entire back surface 100b of the substrate 100 may be provided before the processing step of the back surface 100b of the substrate 100 described above.
  • the back grinding step is a step of grinding the entire back surface 100 b of the substrate 100 in order to thin the semiconductor device 112 to a thickness suitable for a package.
  • the back grinding process can be performed by any known apparatus.
  • the back surface 100b of the substrate 100 may be polished to planarize the back surface 100b of the substrate 100. . Polishing of the back surface of the substrate can be performed by any polishing apparatus such as a chemical mechanical polishing apparatus (CMP apparatus).
  • CMP apparatus chemical mechanical polishing apparatus
  • Knife edge prevention processing can be performed using arbitrary apparatuses, such as a well-known apparatus.
  • the substrate may be divided by pulling a dicing tape.
  • the cutting groove 130 is formed on the back surface 100 b of the substrate 100, and then the cutting groove 132 is formed on the surface 100 a of the substrate 100.
  • the lower end of the cutting blade 43 does not reach the bottom of the cutting groove 130 formed on the back surface 100b.
  • the depth of the cutting groove 132 formed on the surface 100 a of the substrate 100 is made to be about the same as the thickness of the layer on which the device 112 is formed.
  • FIG. 11 is a view schematically showing how a substrate on which devices are formed is divided into individual chips by pulling a dicing tape.
  • the cutting groove 132 formed on the surface 100 a of the substrate 100 as described above does not reach the bottom of the cutting groove 130 formed on the back surface 100 b of the substrate 100. Since the cutting groove 132 is shallow, the width of the cutting groove 132 can be reduced.
  • the cutting groove 130 and the cutting groove 132 of the substrate 100 are obtained by pulling the dicing tape T in a direction parallel to the plane of the substrate 100.
  • the substrate 100 on which the device 112 is formed can be divided into individual chips.
  • FIG. 12 is a view schematically showing how a substrate on which devices are formed is divided into individual chips by pulling a dicing tape.
  • the modified layer 134 is formed below the planned dividing line 111 by the laser from the surface 100 a of the substrate 100.
  • the substrate 100 is divided at the cutting grooves 130 and the modifying layer 134, and the substrate 100 on which the device 112 is formed is individually separated. Can be divided into chips.
  • FIG. 13 is a flow chart schematically showing a method of dividing a substrate on which a device disclosed herein is formed into individual chips. This flow is started from the state in which the device 112 is formed on a semiconductor substrate such as silicon. The surface on which the device 112 is formed is the surface 100 a of the substrate 100. First, knife edge prevention processing is performed on the peripheral portion of the substrate 100 where the device 112 is not formed (S102). The semiconductor substrate is chamfered at its peripheral portion in order to prevent damage and dust generation during handling. If the substrate in this state is processed as it is in the following back grinding process, the peripheral edge will remain like a knife edge, which may cause problems in processes such as cracking, chipping or dusting during subsequent handling. is there.
  • the peripheral edge on the surface side is ground to a thickness slightly deeper than the thickness after back grinding.
  • the step of applying the knife edge preventing process can be performed by any method using any device as described above. In addition, such steps may be omitted if unnecessary, such as not performing backgrinding, or reducing the influence of the above-mentioned knife edge.
  • a back grinding process is performed on the entire back surface 100b of the substrate 100 (S104). As mentioned above, the backgrinding process can be performed on any device. Moreover, such a process may be omitted if unnecessary.
  • the back surface 100 b of the substrate 100 is polished (S 108).
  • the flatness of the back surface 100 b of the substrate 100 may be deteriorated, so that the flatness of the back surface 100 b of the substrate is enhanced. Polishing of the back surface 100b of the substrate 100 can be performed by any method using a CMP apparatus or the like as described above. The back surface polishing step may be omitted if it is unnecessary.
  • the back surface 100b of the substrate 100 is processed (S108).
  • the processing of the back surface 100 b of the substrate 100 can be performed by forming the cutting groove 130 along the planned dividing line 111 by the cutting blade 43 or the laser processing apparatus 60 as described above. Further, as described above, a processing liquid containing an oxidizing agent and an alkali agent is used in back surface processing. Therefore, the back surface 100b of the substrate 100 can be efficiently processed chemically and mechanically. Next, the surface 100a of the substrate 100 is processed to divide the substrate 100 into individual chips (S110). The processing of the surface 100 a of the substrate 100 can be performed along the planned dividing line 111 by the cutting blade 43 or the laser processing apparatus 60 as described above.
  • the method of dividing a substrate on which a device according to an embodiment of the present disclosure is formed into individual chips first, cutting grooves are formed on the back surface of the substrate and then the substrate is separated from the surface of the substrate. Divide into chips. Therefore, the cutting depth of the substrate can be shallow compared to the case where the substrate is cut and divided only from the surface of the substrate. Therefore, the width of the planned dividing line formed on the surface of the substrate can be narrowed, and the yield of device formation can be increased. Further, since the processing liquid containing the oxidizing agent and the alkaline agent is used for processing the back surface of the substrate, the back surface can be efficiently processed chemically and mechanically.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dicing (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un procédé de découpage en dés avec lequel il est possible d'obtenir un rendement élevé même lorsqu'une puce est découpée avec une largeur étroite. L'invention concerne un procédé de division d'un substrat sur lequel est formé un dispositif en puces individuelles. Les procédés comprennent : une étape consistant à fournir un liquide de traitement comprenant un agent oxydant et un agent alcalin à une surface arrière du substrat sur laquelle le dispositif n'est pas formé ; une étape de traitement, tandis que le liquide de traitement est fourni, du substrat à partir de la surface arrière du substrat le long d'une ligne planifiée de division ; et une étape de traitement du substrat le long de la ligne planifiée de division à partir de la surface du substrat sur laquelle le dispositif est formé.
PCT/JP2018/039580 2017-11-07 2018-10-25 Procédé et véhicule pour diviser un substrat ayant un dispositif formé sur celui-ci en puces individuelles WO2019093133A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-214429 2017-11-07
JP2017214429A JP6836491B2 (ja) 2017-11-07 2017-11-07 デバイスが形成された基板を個々のチップに分割するための方法および装置

Publications (1)

Publication Number Publication Date
WO2019093133A1 true WO2019093133A1 (fr) 2019-05-16

Family

ID=66438860

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/039580 WO2019093133A1 (fr) 2017-11-07 2018-10-25 Procédé et véhicule pour diviser un substrat ayant un dispositif formé sur celui-ci en puces individuelles

Country Status (3)

Country Link
JP (1) JP6836491B2 (fr)
TW (1) TWI791654B (fr)
WO (1) WO2019093133A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111872830A (zh) * 2020-08-06 2020-11-03 重庆交通职业学院 一种基于电动汽车故障诊断研究的多功能维修设备

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11289378B2 (en) * 2019-06-13 2022-03-29 Wolfspeed, Inc. Methods for dicing semiconductor wafers and semiconductor devices made by the methods
KR20210135128A (ko) 2020-05-04 2021-11-12 삼성전자주식회사 반도체 패키지 및 그 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165371A (ja) * 2005-12-09 2007-06-28 Toshiba Corp 半導体装置の製造方法
JP2011159679A (ja) * 2010-01-29 2011-08-18 Furukawa Electric Co Ltd:The チップの製造方法
JP2014003216A (ja) * 2012-06-20 2014-01-09 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2015177089A (ja) * 2014-03-17 2015-10-05 株式会社ディスコ 切削方法
JP2017034129A (ja) * 2015-08-03 2017-02-09 株式会社ディスコ 被加工物の加工方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201803235SA (en) * 2015-11-12 2018-05-30 Univ Nanyang Tech Method of manufacturing a hybrid substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165371A (ja) * 2005-12-09 2007-06-28 Toshiba Corp 半導体装置の製造方法
JP2011159679A (ja) * 2010-01-29 2011-08-18 Furukawa Electric Co Ltd:The チップの製造方法
JP2014003216A (ja) * 2012-06-20 2014-01-09 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2015177089A (ja) * 2014-03-17 2015-10-05 株式会社ディスコ 切削方法
JP2017034129A (ja) * 2015-08-03 2017-02-09 株式会社ディスコ 被加工物の加工方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111872830A (zh) * 2020-08-06 2020-11-03 重庆交通职业学院 一种基于电动汽车故障诊断研究的多功能维修设备

Also Published As

Publication number Publication date
TW202018792A (zh) 2020-05-16
JP6836491B2 (ja) 2021-03-03
TWI791654B (zh) 2023-02-11
JP2019087628A (ja) 2019-06-06

Similar Documents

Publication Publication Date Title
WO2019093133A1 (fr) Procédé et véhicule pour diviser un substrat ayant un dispositif formé sur celui-ci en puces individuelles
US7642174B2 (en) Laser beam machining method for wafer
US20220375755A1 (en) Substrate processing system and substrate processing method
TWI700773B (zh) 改善晶圓塗覆
JP2009206162A (ja) ウエーハの分割方法
US20080115891A1 (en) Laser beam machining system
JP2014520407A (ja) ダイアタッチフィルム（ｄａｆ）又は他の材料層をダイシングする前におけるレーザカットされた半導体のエッチング
KR20130121719A (ko) 레이저 가공 장치 및 레이저 가공 방법
JP2005150523A (ja) ウエーハの加工方法
US7776721B2 (en) Laser processing method for gallium arsenide wafer
JP2006190779A (ja) ウエーハの分割方法
TWI546860B (zh) And a method of ablating a substrate having a passivation film laminated thereon
JP2018120913A (ja) レーザー加工装置
KR20130121718A (ko) 레이저 가공 장치 및 레이저 가공 방법
KR20180018353A (ko) SiC 웨이퍼의 생성 방법
US12097642B2 (en) Wafer producing method and wafer producing apparatus
JP5902529B2 (ja) レーザ加工方法
JP2005118808A (ja) レーザー加工装置
JP2011224758A (ja) 研磨方法
JP2009034694A (ja) レーザ加工方法
TW201637084A (zh) 晶圓的加工方法
JP2005103587A (ja) レーザー加工装置
JP2008227276A (ja) ウエーハの分割方法
JP2020061499A (ja) ウェーハの加工方法
JP2013219215A (ja) サファイアウエーハの加工方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18876596

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18876596

Country of ref document: EP

Kind code of ref document: A1