WO2019080329A1 - 柔性基板剥离方法及柔性基板 - Google Patents

柔性基板剥离方法及柔性基板 Download PDF

Info

Publication number
WO2019080329A1
WO2019080329A1 PCT/CN2017/117342 CN2017117342W WO2019080329A1 WO 2019080329 A1 WO2019080329 A1 WO 2019080329A1 CN 2017117342 W CN2017117342 W CN 2017117342W WO 2019080329 A1 WO2019080329 A1 WO 2019080329A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
flexible substrate
forming
carrier substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/117342
Other languages
English (en)
French (fr)
Inventor
邹新
徐湘伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US15/744,789 priority Critical patent/US20190123278A1/en
Publication of WO2019080329A1 publication Critical patent/WO2019080329A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of display, and in particular to a flexible substrate peeling method and a flexible substrate.
  • OLED Organic Light-Emitting Diode
  • flexible OLED organic light-emitting device display technology has developed rapidly. Compared with traditional glass rigid display devices, flexible display devices have a series of advantages such as impact resistance, strong shock resistance, light weight, small size and even wearability.
  • Flexible display devices are currently widely used as flexible substrates, which have good bending properties, but the problem is that they are too soft and are a challenge for various film forming processes. Therefore, in the preparation process of a flexible substrate, a carrier substrate having a good surface flatness and excellent rigidity is generally required. After the preparation of the flexible substrate is completed, the flexible substrate needs to be peeled off from the carrier substrate. Therefore, achieving effective peeling of the flexible substrate and the carrier substrate is one of the key technologies for producing a flexible display device.
  • the widely used stripping method is carried out by high-energy laser irradiation, that is, applying a high-energy laser at the interface between the flexible substrate and the carrier substrate, and cauterizing the polymer on the interface to separate the flexible substrate from the carrier substrate.
  • high-energy laser irradiation that is, applying a high-energy laser at the interface between the flexible substrate and the carrier substrate, and cauterizing the polymer on the interface to separate the flexible substrate from the carrier substrate.
  • air and glass are two completely different media, and the refractive index differs greatly.
  • the refractive index n1 of the air can be approximated as 1, and the refractive index n2 of the glass is between 1.5 and 1.7.
  • the laser will be vertically irradiated onto the glass. With a reflectivity of about 6%, this not only wastes light energy, but also the reflected light entering the laser can damage internal components.
  • the technical problem to be solved by the present invention is to provide a flexible substrate peeling method and a flexible substrate, which can reduce the reflectance of incident light and improve the utilization of light energy.
  • the present invention provides a flexible substrate peeling method, comprising: forming an optical antireflection layer on a first side of a carrier substrate by using a physical vapor deposition method, a chemical liquid deposition method, or a chemical vapor deposition method;
  • the first side of the carrier substrate is illuminated with a laser to detach the flexible substrate from the carrier substrate.
  • the present invention provides another flexible substrate peeling method, comprising: forming an optical anti-reflection layer on a first surface of a carrier substrate; forming a photosensitive layer on a second surface of the carrier substrate, the One side is opposite to the second surface; a flexible substrate is formed on the photosensitive layer; and the first surface of the carrier substrate is illuminated to peel the flexible substrate from the carrier substrate.
  • Another technical solution adopted by the present invention is to provide a flexible substrate which is obtained by the following method:
  • the invention has the beneficial effects that the flexible substrate peeling method of the present invention forms an optical anti-reflection layer on the first surface of the carrier substrate, and the photosensitive layer and the flexible substrate are sequentially formed on the second surface of the carrier substrate, which is different from the prior art.
  • the first side of the carrier substrate peels the flexible substrate from the carrier substrate.
  • the optical antireflection layer can improve the transmittance of incident light and reduce the reflectance of incident light, thereby improving the utilization of light energy. Further, since the energy of the reflected light is reduced, the damage of the laser is also reduced.
  • FIG. 1 is a schematic flow chart of an embodiment of a flexible substrate peeling method of the present invention
  • FIG. 2 is a schematic structural view of an embodiment of the present invention for forming an optical antireflection layer on a first surface of a carrier substrate;
  • FIG. 3 is a schematic structural view of an embodiment of the present invention for forming a photosensitive layer on a second side of a carrier substrate;
  • FIG. 4 is a schematic structural view of an embodiment of the present invention for forming a flexible substrate on a photosensitive layer
  • FIG. 5 is a schematic structural view of an embodiment of a first side of an illumination carrier substrate of the present invention.
  • FIG. 6 is a schematic view showing an embodiment of separation of a flexible substrate and a carrier substrate of the present invention.
  • Fig. 1 is a schematic flow chart showing an embodiment of a flexible substrate peeling method of the present invention.
  • the flexible substrate peeling method of the present embodiment includes the following steps:
  • Step S101 forming an optical antireflection layer on the first surface of the carrier substrate.
  • the optical antireflection layer 11 is formed on the first surface of the carrier substrate 10 by a physical vapor deposition method, a chemical liquid deposition method, or a chemical vapor deposition method.
  • the carrier substrate 10 is a glass substrate, and the material of the optical antireflection layer 11 is titanium oxide or magnesium fluoride. It should be understood that the carrier substrate 10 can also be made of other materials having a certain strength and high light transmittance, which is not limited herein.
  • the material of the optical antireflection layer 11 is not limited to titanium oxide or magnesium fluoride, and may be other materials capable of improving light transmittance, which is not limited herein.
  • Step S102 forming a photosensitive layer on the second surface of the carrier substrate, the first surface being opposite to the second surface.
  • FIG. 3 is a schematic structural view of an embodiment of the present invention for forming a photosensitive layer on a second surface of a carrier substrate.
  • the material of the photosensitive layer 12 is polyimide, and the thickness of the photosensitive layer 12 is from 1 ⁇ m to 10 ⁇ m.
  • the photosensitive layer 12 is on the second surface of the carrier substrate 10, and the optical anti-reflection layer 11 is on the first surface of the carrier substrate 10.
  • the first surface and the second surface are located on opposite sides of the carrier substrate 10.
  • the material of the photosensitive layer 12 is not limited to polyimide, and the thickness of the photosensitive layer may be increased or decreased according to actual conditions, and is not limited herein.
  • Step S103 forming a flexible substrate on the photosensitive layer.
  • FIG. 4 is a schematic structural view of an embodiment of the present invention for forming a flexible substrate on a photosensitive layer.
  • a thin film transistor layer (not shown) is formed on the surface of the photosensitive layer
  • an OLED layer 13 is formed on the surface of the thin film transistor layer
  • an encapsulation layer 14 is formed on the surface of the OLED layer.
  • the metal film layer is deposited on the photosensitive layer 12
  • the metal film layer is etched into a gate electrode, and then a gate insulating layer is deposited on the surface of the gate electrode, wherein the gate insulating layer includes silicon nitride. SiNx, at least one of amorphous silicon oxide SiOx.
  • a source and a drain separated by a channel are formed on the gate insulating layer, and finally, after the gate, the source and the drain are formed, an insulating passivation layer is deposited on the surface of the thin film transistor layer.
  • a contact via is disposed on the insulating passivation layer, and a contact electrode is disposed in the contact via.
  • the preparation method of the thin film transistor layer may also be in other well-known manners, which is not limited herein.
  • the OLED layer is formed by vapor deposition on the surface of the thin film transistor layer. It should be understood that the manner of forming the OLED layer is not limited to the evaporation method, and other existing OLED layer formation methods such as inkjet printing may be employed, which is not limited herein.
  • the encapsulation layer is formed by using a thin film encapsulation technique on the surface of the OLED layer. It should be understood that the manner of forming the encapsulation layer is not limited to the thin film encapsulation technology, and other existing encapsulation layer formation manners may be adopted, which is not limited herein.
  • Step S104 Illuminating the first surface of the carrier substrate to peel the flexible substrate from the carrier substrate.
  • FIG. 5 is a schematic structural view of an embodiment of the first surface of the light carrier substrate of the present invention
  • FIG. 6 is a schematic view showing an embodiment of the flexible substrate and the carrier substrate of the present invention.
  • the laser light 15 is used for illumination
  • the thickness of the optical antireflection layer 11 is an odd multiple of 1/4 wavelength of the laser light 15.
  • the laser light 15 is used to scan and irradiate the photosensitive layer 12 from the carrier substrate 10 facing the interface between the flexible substrate and the carrier substrate 10, and the short pulse laser burns the material of the surface layer of the photosensitive layer 12 and the carrier substrate 10. Further, the flexible substrate is separated from the carrier substrate 10.
  • the flexible substrate peeling method in the above embodiment can be applied to the preparation of a flexible substrate.
  • an optical antireflection layer is formed on the first surface of the carrier substrate, and a photosensitive layer and a flexible substrate are sequentially formed on the second surface of the carrier substrate to illuminate the first surface of the carrier substrate.
  • the flexible substrate is peeled off from the carrier substrate.
  • the optical antireflection layer can improve the transmittance of incident light and reduce the reflectance of incident light, thereby improving the utilization of light energy. Further, since the energy of the reflected light is reduced, the damage of the laser is also reduced.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种柔性基板剥离方法及柔性基板，所述方法包括：在载体基板(10)第一面形成光学增透层(11) (S101)；在所述载体基板(10)的第二面形成光敏层(12)，所述第一面与第二面相对(S102)；在所述光敏层(12)上形成柔性基板(S103)；光照所述载体基板(10)第一面，使所述柔性基板从所述载体基板(10)上剥离(S104)。光学增透层(11)能够提高入射光的透射性，降低入射光的反射率，因此能提高光能利用率。进一步的，由于降低了反射光的能量，从而也降低了激光器的损伤。

Description

柔性基板剥离方法及柔性基板
【技术领域】
本发明涉及显示领域，特别是涉及一种柔性基板剥离方法及柔性基板。
【背景技术】
有机发光二极体（Organic Light-Emitting Diode, 简称OLED）显示技术，具有自发光、广视角、响应速度快、低耗电等优点而得到广泛关注。
近年来，柔性OLED有机发光器件显示技术飞速发展，与传统的玻璃刚性显示器件相比，柔性显示器件有耐冲击、抗震能力强、重量轻、体积小甚至可穿戴等一系列优势。
柔性显示器件目前广泛使用的是柔性基板，它们弯曲特性好，但带来的问题是太过柔软，对各种成膜制程都是一个挑战。因此，在柔性基板的制备过程中，通常需要一个表面平坦度好，同时具有优良刚性的承载基板。在完成柔性基板制备后，需要把柔性基板从承载基板上剥离下来。因此，将柔性基板与承载基板实现有效剥离是生产柔性显示器件的关键技术之一。
目前广泛采用的剥离方法是采用高能量激光照射的方式进行，即在柔性基板和承载基板的界面施加高能量的激光，烧灼界面上的聚合物使得柔性基板与承载基板分离。但是，空气与玻璃是两种完全不同的介质，折射率相差较大，空气折射率n1可近似认为是1，玻璃折射率n2在1.5~1.7之间，激光从空气垂直照射到玻璃上会有约6%的反射率，这不仅浪费光能量，而且反射光进入激光器还会损伤内部元件。
【发明内容】
本发明主要解决的技术问题是提供一种柔性基板剥离方法及柔性基板，能够降低入射光的反射率，提高光能利用率。
为解决上述主要技术问题，本发明提供一种柔性基板剥离方法，其中，包括：在载体基板第一面使用物理气相沉积法、化学液相沉积法或化学气相沉积法形成光学增透层；
在所述载体基板的第二面形成光敏层，所述第一面与第二面相对；
在所述光敏层上形成柔性基板；
使用激光光照所述载体基板第一面，使所述柔性基板从所述载体基板上剥离。
为解决上述主要技术问题，本发明提供另一种柔性基板剥离方法，其中，包括：在载体基板第一面形成光学增透层；在所述载体基板的第二面形成光敏层，所述第一面与第二面相对；在所述光敏层上形成柔性基板；光照所述载体基板第一面，使所述柔性基板从所述载体基板上剥离。
为解决上述技术问题，本发明采用的再一个技术方案是：提供一种柔性基板，所述柔性基板由以下方法制得：
在载体基板第一面形成光学增透层；
在所述载体基板的第二面形成光敏层，所述第一面与第二面相对；
在所述光敏层上形成柔性基板；
光照所述载体基板第一面，使所述柔性基板从所述载体基板上剥离。
本发明的有益效果是：区别于现有技术的情况，本发明的柔性基板剥离方法，在载体基板第一面形成光学增透层，在载体基板第二面依次形成光敏层以及柔性基板，光照所述载体基板第一面使所述柔性基板从所述载体基板上剥离。光学增透层能够提高入射光的透射性，降低入射光的反射率，因此能提高光能利用率。进一步的，由于降低了反射光的能量，从而也降低了激光器的损伤。
【附图说明】
图1是本发明的柔性基板剥离方法的一实施方式的流程示意图；
图2 是本发明在载体基板第一面形成光学增透层的一实施方式的结构示意图；
图3是本发明在载体基板第二面形成光敏层的一实施方式的结构示意图；
图4是本发明在光敏层上形成柔性基板的一实施方式的结构示意图；
图5是本发明光照载体基板第一面的一实施方式的结构示意图；
图6是本发明柔性基板与载体基板的分离一实施方式的示意图。
【具体实施方式】
为了便于理解本发明，下面将结合本发明实施方式中的附图，对本发明实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式仅仅是本发明的较佳的实施方式，并不限于本文所描述的实施方式。相反地，提供这些实施方式的目的是为了让公众对本发明的公开内容理解的更加清楚透彻。
如图1所示，图1是本发明的柔性基板剥离方法的一实施方式的流程示意图。本实施方式的柔性基板剥离方法包括以下步骤：
步骤S101：在载体基板第一面形成光学增透层。
参阅图2，图2 是本发明在载体基板第一面形成光学增透层的一实施方式的结构示意图。在本实施方式中，在载体基板10第一面使用物理气相沉积法、化学液相沉积法或化学气相沉积法形成光学增透层11。载体基板10为玻璃基板，光学增透层11的材料为氧化钛或氟化镁。应理解，载体基板10也可以由其他具有一定强度且光透射率较高的材料所制得，在此不做限定。光学增透层11的材料并不限定为氧化钛或氟化镁，也可以是其它能够提高光透射率的材料，在此不做限定。
步骤S102：在载体基板的第二面形成光敏层，第一面与第二面相对。
参阅图3，图3是本发明在载体基板第二面形成光敏层的一实施方式的结构示意图。在本实施方式中，光敏层12的材料为聚酰亚胺，光敏层12的厚度为1μm-10μm。其中，光敏层12在载体基板10的第二面，光学增透层11在载体基板10的第一面，第一面和第二面位于载体基板10相对的两面。应理解，光敏层12的材料不限于聚酰亚胺，光敏层的厚度也可以根据实际情况进行增减，此处均不予限定。
步骤S103：在光敏层上形成柔性基板。
参阅图4，图4是本发明在光敏层上形成柔性基板的一实施方式的结构示意图。在本实施方式中，依次在光敏层表面形成薄膜晶体管层（图示未标出）、在薄膜晶体管层表面形成OLED层13以及在OLED层表面形成封装层14。
在本实施方式中，先在光敏层12上沉积金属膜层后，将金属膜层刻蚀成栅极，然后在栅极的表面沉积栅极绝缘层，其中，栅极绝缘层包括氮化硅SiNx，非晶氧化硅SiOx中的至少一种。再在栅极绝缘层上形成以一沟道分隔开的源极和漏极，最后在栅极、源极和漏极形成以后，在薄膜晶体管层的表面沉积绝缘钝化层。绝缘钝化层上设置有接触通孔，接触通孔中设置有接触电极。薄膜晶体管层的制备方法还可以有其他公知的方式，此处不做限定。
在本实施方式中，OLED层是通过在薄膜晶体管层表面蒸镀而形成的。应理解，OLED层的形成方式并不限于蒸镀的方式，其他现有的OLED层的形成方式如喷墨打印均可被采用，此处不予限定。
在本实施方式中，封装层是通过在OLED层表面使用薄膜封装技术而形成的。应理解，封装层的形成方式并不限于薄膜封装技术，其他现有的封装层的形成方式均可被采用，此处不予限定。
步骤S104：光照载体基板第一面，使柔性基板从载体基板上剥离。
参阅图5和图6，图5是本发明光照载体基板第一面的一实施方式的结构示意图，图6是本发明柔性基板与载体基板的一实施方式分离示意图。在本实施方式中，光照使用的是激光15，光学增透层11的厚度为激光15的1/4波长的奇数倍。在本实施方式中，使用激光15从载体基板10第一面对柔性基板与载体基板10界面的光敏层12进行扫描照射，短脉冲激光将光敏层12与载体基板10接触面表层的材料烧毁，进而使得柔性基板与载体基板10剥离开。
以上实施方式中的柔性基板剥离方法可以应用于制备柔性基板中。
区别于现有技术的情况，本发明的柔性基板剥离方法，在载体基板第一面形成光学增透层，在载体基板第二面依次形成光敏层以及柔性基板，光照所述载体基板第一面使所述柔性基板从所述载体基板上剥离。光学增透层能够提高入射光的透射性，降低入射光的反射率，因此能提高光能利用率。进一步的，由于降低了反射光的能量，从而也降低了激光器的损伤。

Claims (20)

  1. 一种柔性基板剥离方法，其中，包括：
    在载体基板第一面使用物理气相沉积法、化学液相沉积法或化学气相沉积法形成光学增透层；
    在所述载体基板的第二面形成光敏层，所述第一面与第二面相对；
    在所述光敏层上形成柔性基板；
    使用激光光照所述载体基板第一面，使所述柔性基板从所述载体基板上剥离。
  2. 根据权利要求1所述的柔性基板剥离方法，其中，所述光学增透层的厚度为所述激光1/4波长的奇数倍。
  3. 根据权利要求1所述的柔性基板剥离方法，其中，所述光学增透层的材料为氧化钛或氟化镁。
  4. 根据权利要求1所述的柔性基板剥离方法，其中，所述光敏层的材料为聚酰亚胺，所述光敏层的厚度为1μm-10μm。
  5. 根据权利要求1所述的柔性基板剥离方法，其中，所述在所述光敏层上形成柔性基板的步骤具体包括：
    在所述光敏层表面形成薄膜晶体管层；
    在所述薄膜晶体管层表面形成OLED层；
    在所述OLED层表面形成封装层。
  6. 根据权利要求5所述的柔性基板剥离方法，其中，所述在所述薄膜晶体管层表面形成OLED层的步骤具体包括:在所述薄膜晶体管层表面蒸镀形成OLED层。
  7. 根据权利要求5所述的柔性基板剥离方法，其中，所述在所述OLED层表面形成封装层具体步骤包括：在所述OLED层表面使用薄膜封装技术形成封装层。
  8. 一种柔性基板剥离方法，其中，包括：
    在载体基板第一面形成光学增透层；
    在所述载体基板的第二面形成光敏层，所述第一面与第二面相对；
    在所述光敏层上形成柔性基板；
    光照所述载体基板第一面，使所述柔性基板从所述载体基板上剥离。
  9. 根据权利要求8所述的柔性基板剥离方法，其中，所述在载体基板第一面形成光学增透层的具体步骤包括：在载体基板第一面使用物理气相沉积法、化学液相沉积法或化学气相沉积法形成光学增透层。
  10. 根据权利要求8所述的柔性基板剥离方法，其中，所述光照使用的是激光。
  11. 根据权利要求10所述的柔性基板剥离方法，其中，所述光学增透层的厚度为所述激光1/4波长的奇数倍。
  12. 根据权利要求8所述的柔性基板剥离方法，其中，所述光学增透层的材料为氧化钛或氟化镁。
  13. 根据权利要求8所述的柔性基板剥离方法，其中，所述光敏层的材料为聚酰亚胺，所述光敏层的厚度为1μm-10μm。
  14. 根据权利要求8所述的柔性基板剥离方法，其中，所述在所述光敏层上形成柔性基板的步骤具体包括：
    在所述光敏层表面形成薄膜晶体管层；
    在所述薄膜晶体管层表面形成OLED层；
    在所述OLED层表面形成封装层。
  15. 根据权利要求14所述的柔性基板剥离方法，其中，所述在所述薄膜晶体管层表面形成OLED层的步骤具体包括:在所述薄膜晶体管层表面蒸镀形成OLED层。
  16. 根据权利要求14所述的柔性基板剥离方法，其中，所述在所述OLED层表面形成封装层具体步骤包括：在所述OLED层表面使用薄膜封装技术形成封装层。
  17. 一种柔性基板，其中，所述柔性基板由以下方法制得：
    在载体基板第一面形成光学增透层；
    在所述载体基板的第二面形成光敏层，所述第一面与第二面相对；
    在所述光敏层上形成柔性基板；
    光照所述载体基板第一面，使所述柔性基板从所述载体基板上剥离。
  18. 根据权利要求17所述的柔性基板，其中，所述在载体基板第一面形成光学增透层的具体步骤包括：在载体基板第一面使用物理气相沉积法、化学液相沉积法或化学气相沉积法形成光学增透层。
  19. 根据权利要求17所述的柔性基板，其中，所述光学增透层的材料为氧化钛或氟化镁。
  20. 根据权利要求17所述的柔性基板，其中，所述光敏层的材料为聚酰亚胺，所述光敏层的厚度为1μm-10μm。
PCT/CN2017/117342 2017-10-23 2017-12-20 柔性基板剥离方法及柔性基板 Ceased WO2019080329A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/744,789 US20190123278A1 (en) 2017-10-23 2017-12-20 Stripping method for a flexible substrate and flexible substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711006653.0 2017-10-23
CN201711006653.0A CN107845741B (zh) 2017-10-23 2017-10-23 柔性基板剥离方法及柔性基板

Publications (1)

Publication Number Publication Date
WO2019080329A1 true WO2019080329A1 (zh) 2019-05-02

Family

ID=61663109

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/117342 Ceased WO2019080329A1 (zh) 2017-10-23 2017-12-20 柔性基板剥离方法及柔性基板

Country Status (2)

Country Link
CN (1) CN107845741B (zh)
WO (1) WO2019080329A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10522770B2 (en) 2017-12-28 2019-12-31 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Fabricating method of flexivle panel and flexible display device
CN108230904A (zh) * 2017-12-28 2018-06-29 武汉华星光电半导体显示技术有限公司 一种柔性面板的制备方法及柔性显示装置
CN108963111B (zh) * 2018-05-03 2020-07-28 云谷（固安）科技有限公司 柔性显示面板及其制作方法、显示装置
CN110993568B (zh) * 2019-10-25 2023-06-20 京东方科技集团股份有限公司 一种显示器件制造方法及显示器件
CN112002740A (zh) * 2020-08-10 2020-11-27 深圳市华星光电半导体显示技术有限公司 基板及其分离方法、显示面板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101777588A (zh) * 2009-01-14 2010-07-14 财团法人工业技术研究院 光散射多层结构及其制造方法
WO2012056803A1 (ja) * 2010-10-29 2012-05-03 東京応化工業株式会社 積層体、およびその積層体の分離方法
CN104716081A (zh) * 2015-03-26 2015-06-17 京东方科技集团股份有限公司 柔性装置及其制作方法
CN105845203A (zh) * 2016-05-26 2016-08-10 中国航空工业集团公司北京航空材料研究院 一种柔性铜网栅基透明导电薄膜
CN106098939A (zh) * 2016-08-26 2016-11-09 武汉华星光电技术有限公司 激光无损剥离柔性基板的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7867907B2 (en) * 2006-10-17 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN106784311A (zh) * 2016-12-27 2017-05-31 武汉华星光电技术有限公司 柔性面板及其制作方法
CN106887524A (zh) * 2017-02-24 2017-06-23 武汉华星光电技术有限公司 有机电致发光显示装置及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101777588A (zh) * 2009-01-14 2010-07-14 财团法人工业技术研究院 光散射多层结构及其制造方法
WO2012056803A1 (ja) * 2010-10-29 2012-05-03 東京応化工業株式会社 積層体、およびその積層体の分離方法
CN104716081A (zh) * 2015-03-26 2015-06-17 京东方科技集团股份有限公司 柔性装置及其制作方法
CN105845203A (zh) * 2016-05-26 2016-08-10 中国航空工业集团公司北京航空材料研究院 一种柔性铜网栅基透明导电薄膜
CN106098939A (zh) * 2016-08-26 2016-11-09 武汉华星光电技术有限公司 激光无损剥离柔性基板的方法

Also Published As

Publication number Publication date
CN107845741B (zh) 2019-05-07
CN107845741A (zh) 2018-03-27

Similar Documents

Publication Publication Date Title
WO2019080329A1 (zh) 柔性基板剥离方法及柔性基板
CN102651341B (zh) 一种tft阵列基板的制造方法
WO2012043971A2 (ko) 롤 형상의 모기판을 이용한 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판
EP1624494A4 (en) TRANSPARENT CONDUCTIVE SUBSTRATE FOR A SOLAR BATTERY AND METHOD FOR THE PRODUCTION THEREOF
WO2019085065A1 (zh) 柔性 oled 显示面板及其制备方法
WO2019085072A1 (zh) 柔性显示面板及其制造方法、柔性显示装置
CN104867872B (zh) 柔性显示基板的制作方法及柔性显示面板的制作方法
CN108831911B (zh) 一种柔性有机发光二极管显示器及其制作方法
KR102065901B1 (ko) 수지기판 적층체 및 전자 디바이스의 제조방법
WO2017063295A1 (zh) Oled显示面板及其制作方法
CN102569412A (zh) 薄膜晶体管器件及其制造方法
WO2015143745A1 (zh) 一种阵列基板的制造方法
TWI778019B (zh) 併入積層基板的電子組件及其製造方法
WO2019127698A1 (zh) 一种柔性面板的制备方法及柔性显示装置
WO2016169355A1 (zh) 阵列基板及其制备方法、显示面板、显示装置
WO2021036282A1 (zh) 显示基板、显示面板以及显示装置
CN108831930A (zh) 一种基于激光技术的柔性薄膜晶体管及其制备方法
WO2019136872A1 (zh) 一种阵列基板、oled显示面板及oled显示器
WO2012046428A1 (ja) 半導体装置の製造方法
WO2019010749A1 (zh) 显示面板及其制备方法、显示器
WO2019033578A1 (zh) 柔性oled显示面板的柔性基底及其制备方法
CN108074864A (zh) 阵列基板及其制备方法、柔性oled显示器件
WO2019010751A1 (zh) 封装组件的制备方法、封装组件及显示装置
CN110854133B (zh) 显示面板的制备方法及显示面板
WO2018120288A1 (zh) Oled保护膜的封装结构及其封装方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17929840

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17929840

Country of ref document: EP

Kind code of ref document: A1