WO2019073853A1

WO2019073853A1 - Optical device and system

Info

Publication number: WO2019073853A1
Application number: PCT/JP2018/036803
Authority: WO
Inventors: 裕輝田沼
Original assignee: ローム株式会社
Priority date: 2017-10-10
Filing date: 2018-10-02
Publication date: 2019-04-18

Abstract

One aspect of the present disclosure provides an optical device. This optical device is provided with a supporting body and an optical element. The optical element is arranged on the supporting body and emits light. The supporting body comprises at least one positioning unit. The at least one positioning unit is affixed to a part of a member that has an irradiation target range, onto which light from the optical element is irradiated, so as to determine the positions of the optical element and the irradiation target range relative to each other.

Description

Optical device, system

The present disclosure relates to optical devices and systems.

The conventional optical device includes, for example, a substrate, a light emitting element, a wiring pattern, a bonding layer, and a sealing resin. The wiring pattern is formed on the substrate. The light emitting element is disposed in the wiring pattern via the bonding layer. The sealing resin is disposed on the base material and covers the light emitting element and the wiring pattern. When the light emitting element emits light, light is emitted from the optical device.

The present disclosure is conceived under the above-described circumstances, and its main object is to provide a more preferable optical device.

According to a first aspect of the present disclosure, an optical device is provided. The optical device comprises a support and an optical element. The optical element is disposed on the support and emits light. The support comprises at least one positioning part. The at least one positioning portion is for positioning the optical element and the irradiation target area by fixing to a part of a member having the irradiation target area to which the light from the optical element is irradiated. is there.

According to a second aspect of the present disclosure, a system is provided. The system includes the optical device provided by the first aspect of the present disclosure, a wiring substrate on which the optical device is disposed, a bonding portion bonding the optical device and the wiring substrate, and the irradiation target area. And a member.

Other features and advantages of the present disclosure will become more apparent from the detailed description given below with reference to the accompanying drawings.

It is a figure showing a part of system of a 1st embodiment. It is a figure showing a part of system of a 1st embodiment. It is a perspective view of the optical apparatus of 1st Embodiment. It is a sectional view of an optical device of a 1st embodiment. It is a top view of the optical apparatus of 1st Embodiment. It is a top view of the optical apparatus of 1st Embodiment. It is a top view of the optical apparatus of 1st Embodiment. It is a top view of the optical apparatus of 1st Embodiment. It is a top view of the optical apparatus of 1st Embodiment. It is a top view which shows the inner surface of the 2nd member of the optical apparatus of 1st Embodiment. It is a back view of the optical apparatus of 1st Embodiment. It is sectional drawing which expands a part of optical apparatus of 1st Embodiment typically, and is shown. It is a top view of the modification of the optical device of a 1st embodiment. It is a top view of the modification of the optical device of a 1st embodiment. It is a top view of the modification of the optical device of a 1st embodiment. It is sectional drawing of the optical element of the optical apparatus of 1st Embodiment. It is sectional drawing of the modification of the system of 1st Embodiment. FIG. 5 is a cross-sectional view at a point in time of a method of manufacturing the optical device shown in FIG. 4. It is sectional drawing of the modification of the system of 1st Embodiment. It is sectional drawing of the modification of the system of 1st Embodiment. It is sectional drawing of the modification of the system of 1st Embodiment. It is sectional drawing of the modification of the system of 1st Embodiment. It is sectional drawing of the modification of the system of 1st Embodiment. It is sectional drawing of the modification of the system of 1st Embodiment. It is sectional drawing of the modification of the system of 1st Embodiment. It is sectional drawing of the modification of the system of 1st Embodiment. It is sectional drawing of the modification of the system of 1st Embodiment. It is sectional drawing of the modification of the system of 1st Embodiment. It is a top view (it permeate | transmits a 2nd light transmission member) of the semiconductor laser apparatus concerning 2nd Embodiment of this indication. FIG. 29 is a bottom view of the semiconductor laser device shown in FIG. 28. FIG. 29 is a front view of the semiconductor laser device shown in FIG. 28. FIG. 29 is a cross-sectional view taken along the line XXXI-XXXI of FIG. 28. FIG. 29 is a cross-sectional view taken along the line XXXII-XXXII in FIG. 28. FIG. 29 is a plan view of a semiconductor laser device of the semiconductor laser device shown in FIG. 28. FIG. 34 is a cross-sectional view taken along the line XXXIV-XXXIV of FIG. It is a top view (it permeate | transmits a 2nd light transmission member) of the semiconductor laser apparatus concerning the 1st modification of 2nd Embodiment of this indication. FIG. 36 is a cross-sectional view taken along the line XXXVI-XXXVI in FIG. It is a top view (it permeate | transmits a 2nd light transmission member) of the semiconductor laser apparatus concerning the 2nd modification of 2nd Embodiment of this indication. FIG. 18 is a cross-sectional view of a semiconductor laser device according to a third modification of the second embodiment of the present disclosure. It is a top view (it permeate | transmits a 2nd light transmission member) of the semiconductor laser apparatus concerning 3rd Embodiment of this indication. FIG. 40 is a bottom view of the semiconductor laser device shown in FIG. 39. FIG. 40 is a cross-sectional view along the line XLI-XLI in FIG. 39. It is a top view (it permeate | transmits a 3rd light transmission member) of the semiconductor laser apparatus concerning 4th Embodiment of this indication. FIG. 43 is a bottom view of the semiconductor laser device shown in FIG. 42. FIG. 43 is a cross-sectional view taken along the line XLIV-XLIV of FIG. 42. FIG. 43 is a cross-sectional view along the line XLV-XLV of FIG. 42. FIG. 43 is a partial enlarged plan view of a semiconductor laser device or the like of the semiconductor laser device shown in FIG. 42. FIG. 47 is a cross-sectional view along the line XLVII-XLVII in FIG. 46. It is a top view (it permeate | transmits a 3rd light transmission member) of the semiconductor laser apparatus concerning 5th Embodiment of this indication. FIG. 49 is a cross-sectional view along the line XLIX-XLIX of FIG. 48.

Hereinafter, embodiments of the present disclosure will be specifically described with reference to the drawings.

In the present disclosure, the terms “a certain item A is formed on a certain item B” and “a certain item A is formed on a certain item B” mean “a certain item A is present unless otherwise specified. It is included that the substance B is formed directly, and that the substance A is formed into a substance B while another substance is interposed between the substance A and the substance B. Similarly, the terms "an item A is located on an item B" and "an item A is located on an item B" mean "an item A is located unless otherwise specified." It is included that it is disposed directly to B, and that "an object A is disposed to an object B while interposing another object between the object A and the object B". Similarly, the terms “some A is laminated to some B” and “some A is laminated onto some B” refer to “some A as being unless otherwise noted. And “being laminated to a certain thing B while being interposed with another thing between a certain thing A and a certain thing B”. The polygonal shape may include a complete polygon and a shape similar to a polygon. The circular shape may include a perfect circle and a shape similar to a circle.

First Embodiment
A first embodiment of the present disclosure will be described using FIGS. 1 to 18.

FIG. 1 is a diagram showing a part of the system of the first embodiment. A system 800 shown in the figure includes an optical device A1, a wiring substrate 801,

conductive portions

802 and 803, a bonding portion 805, and a member 810.

The optical device A1 can include the optical element 3 and the support B1. In the example shown in FIG. 1, the optical element 3 is disposed on the support B1 and emits light 890. Examples of light 890 may include, for example, laser light, visible light, and infrared light. Although the light 890 is described as laser light in the present disclosure, the light 890 may be visible light or infrared light. The specific configuration of the optical device A1 will be described later.

Wiring substrate 801 is, for example, an insulating substrate. The wiring substrate 801 may be, for example, a flexible substrate or a glass epoxy substrate. The conductive portion 802 is disposed on the wiring substrate 801. The conductive portion 802 is made of a conductive material. The material which comprises the electroconductive part 802 is Cu, for example. The material forming the conductive portion 802 may be a material other than Cu. The conductive portion 802 may be referred to as a wiring pattern. The conductive portion 803 is disposed on the wiring substrate 801. The conductive portion 803 is made of, for example, a conductive material, and can perform a heat dissipation function, for example.

The bonding portion 805 is for bonding the optical device A 1 to the wiring substrate 801. The bonding portion 805 is made of, for example, a conductive material and is derived from, for example, solder. In the example illustrated in FIG. 1, the optical device A 1 is disposed on the wiring substrate 801 via the bonding portion 805. The joint 805 may be made of an insulating material.

The member 810 is fixed to the optical device A1. In the present embodiment, the member 810 includes an irradiation target range 811, a main body 812, and a plurality of positioning portions 813.

The light 890 from the optical element 3 is irradiated to the irradiation target range 811. The irradiation target range 811 is a target range to which the light 890 from the optical element 3 is irradiated. The shape in plan view of the irradiation target area 811 may be any shape. For example, the planar view shape of the irradiation target area 811 may be rectangular, circular, or triangular. The irradiation target range 811 may be configured by an optical component. Examples of optical components that constitute the irradiation target area 811 include, for example, mirrors, lenses, optical fibers, and transparent plates. In the example shown in FIG. 1, the irradiation target range 811 is fixed to the main body 812. In the example shown in FIG. 1, the optical component which comprises the irradiation target range 811 is a transparent board.

The main body 812 is typically an electronic component housing. The material which comprises a housing | casing is resin, for example. The main body 812 is not limited to the housing of the electronic component. The irradiation target range 811 and the main body 812 may not be separate bodies, and the irradiation target range 811 and the main body 812 may be an integral body.

The plurality of positioning portions 813 (only one is shown in FIG. 1) are fixed to the plurality of positioning portions 7 (described later) in the optical device A1. Each of the plurality of positioning portions 813 may be a recess or a protrusion. In the example shown in FIG. 1, the plurality of positioning portions 813 are each a recess. Unlike the example shown in FIG. 1, the plurality of positioning portions 813 may be convex portions. In one variation, some of the plurality of positioning portions 813 may be concave portions, and some of the remaining positioning portions may be convex portions. In another variation, the member 810 may not have a plurality of positioning portions 813 and may have only one positioning portion 813.

As shown in FIG. 2, system 800 may further include an optical device 820. The optical device 820 is, for example, a light receiving device and includes a light receiving element. The light 890 from the optical device A1 is reflected by the object 830 via the irradiation target range 811 and then received by the optical device 820.

FIG. 3 is a perspective view of the optical device of the first embodiment. FIG. 4 is a cross-sectional view of the optical device of the first embodiment. FIG. 5 is a plan view of the optical device of the first embodiment. FIG. 6 is a plan view of the optical device of the first embodiment. FIG. 11 is a back view of the optical device of the first embodiment.

The optical device A1 shown in these figures includes a first member 1, a second member 2, an optical element 3, a first conductive portion 41, a second conductive portion 43, and a plurality of third conductive portions 45. A first wire 51, a second wire 52, a functional element 58, a member 6, an insulating portion 81, and

bonding portions

83, 85, 87 are provided. In FIG. 6, the member 6 is shown in a transparent manner. In the present disclosure, the first member 1, the second member 2, the first conductive portion 41, the second conductive portion 43, the plurality of third conductive portions 45, the member 6, the insulating portion 81, and the joint

portion Reference numerals

85 and 87 constitute a support B1.

The first member 1 shown in FIG. 4 and the like is made of an insulating material or a conductive material. In the example shown in FIG. 4 and the like, the first member 1 is made of an insulating material. As such an insulating material, for example, an insulating resin or ceramic may be mentioned. As an insulating resin, an epoxy resin (for example, glass or paper may be included), a phenol resin, a polyimide, polyester, etc. are mentioned, for example. Examples of the ceramic include Al ₂ O ₃ , SiC, and AlN. The first member 1 may be one in which an insulating film is formed on a substrate made of a conductive material such as aluminum. The first member 1 has a rectangular shape in a plan view (direction Z1 view).

As shown in FIGS. 4 and 6, the first member 1 has a first surface 11, a second surface 12, a first side surface 1A, a second side surface 1B, a third side surface 1C, and a fourth side surface 1D. Each of the first surface 11, the second surface 12, the first side surface 1A, the second side surface 1B, the third side surface 1C, and the fourth side surface 1D is, for example, rectangular.

As shown in FIG. 4, the first surface 11 and the second surface 12 are separated in the direction Z 1 orthogonal to the first surface 11 and face away from each other. The first surface 11 and the second surface 12 are both flat. The first surface 11 constitutes a first surface of the support B1.

As shown in FIG. 6, the first side surface 1A and the second side surface 1B are separated in the first direction X1 and face away from each other. The first direction X1 is orthogonal to the direction Z1. The first side surface 1A and the second side surface 1B are both connected to the first surface 11 and the second surface 12. Both the first side 1A and the second side 1B are flat.

The third side surface 1C and the fourth side surface 1D are separated in the second direction Y1 and face opposite to each other. The second direction Y1 is orthogonal to the first direction X1 and the direction Z1. The third side surface 1C and the fourth side surface 1D are both connected to the first surface 11 and the second surface 12. The third side surface 1C and the fourth side surface 1D are both flat.

FIG. 7 is a plan view of the optical device of the first embodiment. In FIG. 7, a part of the configuration is made transparent. As shown in FIGS. 4 and 7, a plurality of through holes are formed in the first member 1. The plurality of through holes formed in the first member 1 includes a plurality of first through holes 14 and one second through hole 15.

Each of the plurality of first through holes 14 penetrates the first member 1 and extends from the first surface 11 to the second surface 12 of the first member 1. As shown in FIG. 7, the shapes of the plurality of first through holes 14 in plan view may be circular. Alternatively, unlike in FIG. 7, the shapes of the plurality of first through holes 14 in plan view may be shapes other than circular (rectangular or triangular). Although FIG. 7 shows an example in which a plurality of first through holes 14 are formed, different from FIG. 7, only one first through hole may be formed. As shown in FIGS. 4 and 12 (the through holes are shown enlarged), the plurality of first through holes 14 have an inner surface 14S. The inner surfaces 14S of the plurality of first through holes 14 are connected to the first surface 11 and the second surface 12. In the example shown in FIG. 12 and the like, the inner surfaces 14S of the plurality of first through holes 14 extend in a direction intersecting with the direction Z1. In the same figure, the inner surface 14S of the plurality of first through holes 14 and the first surface 11 form a portion forming an acute angle in the first member 1, and the inner surface 14S of the plurality of first through holes 14 and the second The surface 12 forms an obtuse-angled portion in the first member 1. Unlike FIG. 4 etc., the site | part which makes an obtuse angle in the 1st member 1 is formed of the inner surface 14S and the 1st surface 11 of several 1st through-hole 14, and the inner surface 14S of several 1st through-hole 14 And the second surface 12 form a portion that forms an acute angle in the first member 1. Alternatively, unlike the example shown in FIG. 4 and the like, the inner surfaces 14S of the plurality of first through holes 14 may extend along the direction Z1. In this case, an inner surface 14S of the plurality of first through holes 14 and the first surface 11 form a portion that forms 90 degrees in the first member 1, and the inner surface 14S of the plurality of first through holes 14 and the second The surface 12 can form a 90-degree portion in the first member 1.

The second through holes 15 pass through the first member 1 and extend from the first surface 11 to the second surface 12 of the first member 1. As shown in FIG. 7, the shape of the second through hole 15 in plan view may be circular. Alternatively, unlike in FIG. 7, the shape of the second through hole 15 in plan view may be a shape other than a circular shape (rectangular or triangular). Although FIG. 7 shows an example in which one second through hole 15 is formed, different from FIG. 7, a plurality of second through holes may be formed. The second through hole 15 has an inner surface 15S. The inner surface 15S of the second through hole 15 is connected to the first surface 11 and the second surface 12. In the example shown in FIG. 4 and FIG. 12, the inner surface 15S of the second through hole 15 extends in a direction intersecting with the direction Z1. In the same figure, a portion forming an acute angle in the first member 1 is formed by the inner surface 15S of the second through hole 15 and the first surface 11, and the inner surface 15S of the second through hole 15 and the second surface 12 are formed. The first member 1 is formed with a portion forming an obtuse angle. Unlike FIG. 4 etc., the site | part which makes an obtuse angle in the 1st member 1 is formed of the inner surface 15S of the 2nd through-hole 15, and the 1st surface 11, and the inner surface 15S of the 2nd through-hole 15 and the 2nd surface A portion forming an acute angle is formed in the first member 1 by 12. Alternatively, unlike the example shown in FIG. 4 or the like, the inner surface 15S of the second through hole 15 may extend along the direction Z1. In this case, the inner surface 15S of the second through hole 15 and the first surface 11 form a portion at 90 degrees to the first member 1, and the inner surface 15S of the second through hole 15 and the second surface 12 The first member 1 can form a portion that makes 90 degrees.

As shown in FIG. 4, FIG. 7, and FIG. 12, a void 17 is formed in the first member 1. The air gap 17 penetrates the first member 1 and extends from the first surface 11 to the second surface 12 of the first member 1. The air gap 17 is hollow. As shown in FIG. 7, the shape of the air gap 17 in a plan view may be circular. Alternatively, unlike FIG. 7, the shape of the air gap 17 in a plan view may be a shape other than a circular shape (a rectangular shape or a triangular shape). Although FIG. 7 shows an example in which one air gap 17 is formed, different from FIG. 7, a plurality of air gaps 17 may be formed. As shown in FIG. 12, the air gap 17 has an inner surface 17S. The inner surface 17S of the air gap 17 is connected to the first surface 11 and the second surface 12. In the example shown in FIG. 12, the inner surface 17S of the air gap 17 extends along the direction Z1. Unlike the example shown in the figure, the inner surface 17S of the air gap 17 may extend in the direction Z1.

As shown in FIG. 5, FIG. 6, etc., the 1st member 1 has 1st area | region R1 and 2nd area | region R2. The first region R1 and the second region R2 are adjacent to each other in the first direction X1 across the virtual straight line LL in plan view. The virtual straight line LL passes through the center C1 of the first member 1 in a plan view, and extends in the second direction Y1.

The second member 2 is made of an insulating material or a conductive material. The second member 2 shown in FIG. 4 is made of an insulating material. As such an insulating material, for example, an insulating resin or ceramic may be mentioned. As an insulating resin, an epoxy resin (for example, glass or paper may be included), a phenol resin, a polyimide, polyester, etc. are mentioned, for example. Examples of the ceramic include Al ₂ O ₃ , SiC, and AlN. The second member 2 may be one in which an insulating film is formed on a substrate made of a conductive material such as aluminum. The second member 2 has a rectangular shape in a plan view.

As shown to FIG. 4, FIG. 6, the 2nd member 2 has the surface 21, the back surface 22, 1st side 2A, 2nd side 2B, 3rd side 2C, and 4th side 2D. The front surface 21, the back surface 22, the first side surface 2A, the second side surface 2B, the third side surface 2C, and the fourth side surface 2D are all rectangular, for example.

As shown in FIG. 4, the front surface 21 and the back surface 22 are separated in the direction Z1 orthogonal to the front surface 21 and face in opposite directions. The front surface 21 and the back surface 22 are both flat.

As shown in FIG. 6, the first side surface 2A and the second side surface 2B are separated in the first direction X1 and face in opposite directions to each other. The first direction X1 is orthogonal to the direction Z1. The first side surface 2A and the second side surface 2B are both connected to the front surface 21 and the back surface 22. Both the first side surface 2A and the second side surface 2B are flat.

The third side surface 2C and the fourth side surface 2D are separated in the second direction Y1 and face opposite to each other. The second direction Y1 is orthogonal to the first direction X1 and the direction Z1. The third side surface 2C and the fourth side surface 2D are both connected to the front surface 21 and the back surface 22. The third side surface 2C and the fourth side surface 2D are both flat.

As shown in FIGS. 4 and 6, the first side surface 2A, the second side surface 2B, the third side surface 2C, and the fourth side surface 2D in the second member 2 are respectively the first side surface 1A in the first member 1 , And may be flush with the second side 1B, the third side 1C, and the fourth side 1D.

As shown in FIG. 4, FIG. 6, FIG. 7, etc., the second member 2 has an inner surface 24 surrounding the optical element 3. The inner surface 24 extends along the direction Z1. Unlike the present embodiment, the inner surface 24 may extend in the direction Z1. The inner surface 24 is connected to the front surface 21 and the back surface 22. The inner surface 24 has a first portion 241, a second portion 242, a third portion 243, a fourth portion 244, a fifth portion 245, a sixth portion 246, a seventh portion 247, and an eighth portion 248. And.

FIG. 10 is a plan view showing the inner surface 24 of the second member of the optical device of the first embodiment. In the example shown in the figure, the first portion 241, the third portion 243, the fifth portion 245, and the seventh portion 247 are all curved in plan view. In the present disclosure, the first portion 241, the third portion 243, the fifth portion 245, and the seventh portion 247 are all curved from the optical element 3 toward the second member 2 in plan view. ing. In the present disclosure, each of the first portion 241, the third portion 243, the fifth portion 245, and the seventh portion 247 is a part of an arc of a circle having a diameter R11 centered on the center C1 of the first member 1. . Unlike the example shown in FIG. 24, any of the first portion 241, the third portion 243, the fifth portion 245, and the seventh portion 247 may not be curved in a plan view and may be linear. .

In the example shown in FIG. 10, the second portion 242, the fourth portion 244, the sixth portion 246, and the eighth portion 248 are all curved in plan view. In the present disclosure, all of the second portion 242, the fourth portion 244, the sixth portion 246, and the eighth portion 248 are curved from the optical element 3 toward the second member 2 in plan view. There is. In the present disclosure, the second portion 242, the fourth portion 244, the sixth portion 246, and the eighth portion 248 are each a part of arcs of different circles of diameter R12 (diameter R12 is smaller than diameter R11). It is. The second part 242 is connected to the first part 241 and the third part 243, the fourth part 244 is connected to the third part 243 and the fifth part 245, and the sixth part 246 is connected to the fifth part 245. And the seventh portion 247, and the eighth portion 248 is connected to the seventh portion 247 and the first portion 241. Unlike the example shown in FIG. 10, any of the second portion 242, the fourth portion 244, the sixth portion 246, and the eighth portion 248 may not be curved in plan view and may be linear. .

Unlike the example shown in FIG. 10, the inner surface 24 of the second member 2 may be circular or rectangular.

A joint portion 85 shown in FIG. 4 or the like is interposed between the first member 1 and the second member 2 and joins the first member 1 and the second member 2. The bonding portion 85 is made of, for example, an epoxy type, a silicone type, or an acrylic type material.

The optical element 3 shown in FIGS. 4 and 6 is disposed on the first surface 11 of the first member 1. The optical element 3 emits light 890. The light 890 may be laser light, visible light, or infrared light. In the example shown, the light 890 is a laser light.

In the example shown in FIG. 6 and FIG. 7, the area where the optical element 3 and the first region R1 overlap in plan view is larger than half of the area of the optical element 3 in plan view. Unlike the example shown in FIG. 6 and FIG. 7, the area where the optical element 3 and the first region R1 overlap in plan view may be equal to half the area of the optical element 3 in plan view. Alternatively, the area where the optical element 3 and the first region R1 overlap in plan view may be smaller than half of the area of the optical element 3 in plan view.

The optical element 3 disclosed in FIG. 6 is a laser diode, and more specifically, a laser diode of a VCSEL (Vertical Cavity Surface Emitting Laser) type. The optical element 3 is not limited to a VCSEL type laser diode. The optical element 3 disclosed in FIGS. 4 and 6 has, for example, a rectangular shape having a length of 100 to 1400 μm and a width of 100 to 1400 μm in a plan view. The thickness (dimension in the direction Z1) of the optical element 3 disclosed in FIGS. 4 and 6 is, for example, 50 to 200 μm.

As shown in FIG. 6, the optical element 3 can include a plurality of light emitting units 35. The plurality of light emitting units 35 are disposed at mutually different positions in plan view. The plurality of light emitting units 35 are separated from each other in plan view. Each of the plurality of light emitting units 35 emits light. The optical element 3 emits planar light 890 along the direction Z1 by including the plurality of light emitting units 35. The light 890 emitted from the optical element 3 reaches the irradiation target range 811 (see FIG. 1) of the member 810.

As shown in FIG. 4, FIG. 6, and FIG. 7, the optical element 3 includes the front surface 31, the back surface 32, the first side surface 3A, the second side surface 3B, the third side surface 3C, and the fourth side surface 3D. Including.

The front surface 31 and the back surface 32 are separated in the direction Z1 orthogonal to the front surface 31, and face opposite to each other. The front surface 31 and the back surface 32 are both flat. A plurality of light emitting units 35 are disposed closer to the front surface 31 than the back surface 32.

The first side surface 3A and the second side surface 3B are separated in the first direction X1 and face opposite to each other. The first direction X1 is orthogonal to the direction Z1. The first side surface 3A and the second side surface 3B are both connected to the front surface 31 and the back surface 32. Both the first side 3A and the second side 3B are flat.

The third side surface 3C and the fourth side surface 3D are separated in the second direction Y1 and face opposite to each other. The second direction Y1 is orthogonal to the first direction X1 and the direction Z1. The third side surface 3C and the fourth side surface 3D are both connected to the front surface 31 and the back surface 32. The third side surface 3C and the fourth side surface 3D are both flat.

An example of a specific structure of the optical element 3 will be described. FIG. 16 is a cross-sectional view of the optical element 3 of the optical device of the first embodiment, and shows an example of a cross-sectional view of a VCSEL type laser diode. In the example illustrated in FIG. 16, the optical element 3 includes the substrate 311, the first semiconductor layer 312, the second semiconductor layer 313, the active layer 315, the insulating layer 317, the current confinement layer 318, and the first conductivity. A layer 33 and a second conductive layer 34 are provided.

The substrate 311 is made of a semiconductor. The semiconductor forming the substrate 311 is, for example, GaAs. The semiconductor constituting the substrate 311 may be other than GaAs.

The active layer 315 is made of, for example, a compound semiconductor that emits light of a wavelength of 980 nm band (hereinafter referred to as “λa”) by spontaneous emission and stimulated emission. The active layer 315 is located between the first semiconductor layer 312 and the second semiconductor layer 313.

The first semiconductor layer 312 is typically a DBR (Distributed Bragg Reflector) layer, and is formed on the substrate 311. The first semiconductor layer 312 is made of a semiconductor having a first conductivity type. In the present embodiment, the first conductivity type is n-type. The first semiconductor layer 312 is configured as a DBR for efficiently reflecting the light emitted from the active layer 315. More specifically, the first semiconductor layer 312 is formed by overlapping a plurality of pairs of two layers which are AlGaAs layers with a thickness of λa / 4 and have different reflectances.

The second semiconductor layer 313 is typically a DBR layer and is made of a semiconductor having a second conductivity type. In the present embodiment, the second conductivity type is p-type. Unlike the present embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. The first semiconductor layer 312 is located between the second semiconductor layer 313 and the substrate 311. The second semiconductor layer 313 is configured as a DBR for efficiently reflecting the light emitted from the active layer 315. More specifically, the second semiconductor layer 313 is an AlGaAs layer with a thickness of λa / 4, and is configured by superposing a plurality of pairs of two layers having different reflectances.

The second semiconductor layer 313 has a surface 3131. The surface 3131 faces away from the side where the first semiconductor layer 312 is located.

As shown in FIG. 16, the current confinement layer 318 is located in the second semiconductor layer 313. The current confinement layer 318 contains, for example, a large amount of Al and is a layer susceptible to oxidation. The current confinement layer 318 is formed by oxidizing the easily oxidized layer. The current confinement layer 318 does not necessarily have to be formed by oxidation, and may be formed by other methods (for example, ion implantation). An opening 3181 is formed in the current confinement layer 318. A current flows through the opening.

The insulating layer 317 is formed on the second semiconductor layer 313. The insulating layer 317 is made of, for example, SiO ₂ .

The first conductive layer 33 is formed on the insulating layer 317. The first conductive layer 33 is made of a conductive material (for example, metal).

As shown in FIG. 16, an opening 331 A is formed in the first conductive layer 33.

The opening 331A exposes the insulating layer 317 and overlaps the active layer 315 in the direction Z1. As can be understood from FIG. 16, the opening 331A overlaps the opening 3181 in the current confinement layer 318 in the direction Z1. Each of the plurality of openings 331A defines the shape of the plurality of light emitting units 35 in plan view.

As shown in FIG. 16, the first conductive layer 33 includes

portions

3333 and 339.

The portion 3333 penetrates the insulating layer 317. A current flows between the portion 3333 and the second semiconductor layer 313. The portion 339 is electrically connected to the surface 3131. The first wire 51 (see FIG. 6) is joined to the portion 339.

The second conductive layer 34 is formed on the lower surface of the substrate 311 in FIG. The second conductive layer 34 is made of a conductive material (for example, metal). The substrate 311 is located between the second conductive layer 34 and the first semiconductor layer 312.

Unlike those shown in FIGS. 6 and 7, the optical element 3 may be one shown in FIG. The number of light emitting units 35 of the optical element 3 of FIG. 13 is smaller than the number of light emitting units 35 of the optical element 3 of FIG. Alternatively, the optical element 3 may have only one light emitting unit 35 (see FIG. 14).

In the example shown in FIG. 4 and the like, at least a portion of the first conductive portion 41, the second conductive portion 43, and the plurality of third conductive portions 45 is a current for supplying power to the optical element 3. Configure the route. The first conductive portion 41, the second conductive portion 43, and the plurality of third conductive portions 45 are made of, for example, a single type or a plurality of types of metals such as Cu, Ni, Ti, and Au. The first conductive portion 41, the second conductive portion 43, and the plurality of third conductive portions 45 may be formed by plating, for example, but are not limited thereto.

In the present embodiment, as shown in FIG. 12, each of the first conductive portion 41 and the second conductive portion 43 includes a plurality of layers. Specifically, the first conductive unit 41 and the second conductive unit 43 each include a first conductive layer 491, a second conductive layer 492, and a third conductive layer 493. The first conductive layer 491 is made of, for example, Cu, the second conductive layer 492 is made of, for example, Ni, and the third conductive layer 493 is made of, for example, Au. A Pd layer may be disposed between the second conductive layer 492 and the third conductive layer 493. The thickness of the first conductive layer 491 is, for example, 20 to 40 μm, the thickness of the second conductive layer 492 is, for example, 1 to 10 μm, and the thickness of the third conductive layer 493 is, for example, 0. It is 05 to 0.2 μm.

FIG. 8 is a diagram in which the second member 2, the optical element 3, the first wire 51, the second wire 52, the functional element 58 and the like are omitted from FIG. As shown in FIGS. 4 and 6 to 8, the first conductive portion 41 is formed on the first surface 11 of the first member 1. The first conductive portion 41 includes a first conductive portion 411 and a second conductive portion 412.

The optical element 3 is disposed in the first conductive portion 411. The first conductive portion 411 is electrically connected to the second conductive layer 34 of the optical element 3.

As shown in FIGS. 8 and 9, the first conductive portion 411 has edges 411A to 411F. The edge 411A extends along the second direction Y1. The edge 411B is connected to the edge 411A and extends along the first direction X1. The edge 411C is connected to the edge 411B and extends along the second direction Y1. The edge 411D extends along the first direction X1. The edge 411E is connected to the edge 411D and extends along the second direction Y1. The edge 411F is connected to the edge 411E and the edge 411A, and extends along the first direction X1.

The first conductive site 411 has a first defect site 4111, a second defect site 4112, and a defect site 4113. The first defect portion 4111, the second defect portion 4112, and the defect portion 4113 have shapes lost in a plan view. The first defect site 4111, the second defect site 4112, and the defect site 4113 may be an opening formed in the first conductive site 411 or a recess formed in the first conductive site 411. In the specific example of the present disclosure, the first defect site 4111 is an opening, the second defect site 4112 is a recess recessed from the edge 411C, and the defect portion 4113 is a recess recessed from the edge 411D. The first defect site 4111 and the second defect site 4112 can be used as marks when the optical element 3 is disposed in the first conductive portion 41. At least a part of the defect portion 4113 overlaps the air gap 17 in a plan view.

In the present disclosure, an example in which the first conductive portion 41 has two defect sites (a first defect site 4111 and a second defect site 4112) is shown, but the first conductive portion 41 is a single defect site or three or more It may have a defect site. Alternatively, the first conductive portion 41 may not have a defect site. In the present disclosure, an example in which the first conductive portion 41 has one defect portion 4113 is shown, but the first conductive portion 41 may have two or more defect portions. Alternatively, the first conductive portion 41 may not have a defective portion. The positions of the defect portion and the defect portion in the first conductive portion 41 are not limited to those illustrated, but can be changed.

The first wire 51 is bonded to the second conductive portion 412. The second conductive portion 412 is electrically connected to the first conductive layer 33 of the optical element 3 through the first wire 51. In plan view, the area of the second conductive portion 412 is smaller than the area of the first conductive portion 411.

As shown in FIG. 8, the second conductive portion 412 has edges 412A-412D. The edge 412A extends along the second direction Y1. The edge 412B is connected to the edge 412A and extends along the first direction X1. The edge 412C is connected to the edge 412B and extends along the second direction Y1. The edge 412D is connected to the edge 412C and extends along the first direction X1.

As shown in FIGS. 4 and 11, the second conductive portion 43 is formed on the second surface 12 of the first member 1. As shown in FIG. 11, the second conductive portion 43 includes a first conductive portion 431, a second conductive portion 432, a third conductive portion 433, and a conductive portion 435. The first conductive portion 431, the second conductive portion 432, the third conductive portion 433 and the conductive portion 435 are spaced apart from one another.

The first conductive portion 431 is electrically connected to the first conductive portion 411 via the third conductive portion 45. The first conductive portion 431 has edges 431A to 431D. The edge 431A extends along the second direction Y1. The edge 431B is connected to the edge 431A and extends along the first direction X1. The edge 431C is connected to the edge 431B and extends along the second direction Y1. The edge 431D is connected to the edge 431C and the edge 431A and extends along the first direction X1.

The second conductive portion 432 is electrically connected to the second conductive portion 412 via the third conductive portion 45. The second conductive portion 432 has edges 432A to 432D. The edge 432A extends along the second direction Y1. The edge 432B is connected to the edge 432A and extends along the first direction X1. The edge 432C is connected to the edge 432B and extends along the second direction Y1. The edge 432D is connected to the edge 432C and the edge 432A, and extends along the first direction X1.

In the present disclosure, the third conductive portion 433 is not electrically connected to the first conductive portion 411 or the second conductive portion 412. Unlike the present disclosure, the third conductive portion 433 may be electrically connected to the first conductive portion 411 via the third conductive portion 45. The third conductive portion 433 has edges 433A to 433D. The edge 433A extends along the second direction Y1. The edge 433B is connected to the edge 433A and extends along the first direction X1. The edge 433C is connected to the edge 433B and extends along the second direction Y1. The edge 433D is connected to the edge 433C and the edge 433A, and extends along the first direction X1.

In the present disclosure, the conductive portion 435 is not in conduction with the first conductive portion 411 or the second conductive portion 412. Unlike the present disclosure, the conductive portion 435 may be electrically connected to the first conductive portion 411 via the third conductive portion 45. Conductive portion 435 has edges 435A-435D. The edge 435A extends along the second direction Y1. The edge 435B is connected to the edge 435A and extends along the first direction X1. Edge 435C is connected to edge 435B and is arc-shaped. The edge 435D is connected to the edge 435C and the edge 435A, and extends along the first direction X1.

As shown in FIGS. 11 and 12, the conductive portion 435 has a defect portion 4351. The missing portion 4351 has a lost shape in plan view. Defect portion 4351 can be an opening formed in conductive portion 435 or a recess formed in conductive portion 435. In embodiments of the present disclosure, defect portion 4351 is an aperture. At least a part of the defect portion 4351 overlaps the air gap 17 in plan view. In the example shown in FIG. 11, the edge 4352 of the defect portion 4351 has a closed shape surrounding the air gap 17 in a plan view. The said shape in FIG. 11 is circular shape. Unlike FIG. 11, the edge 4352 of the defect portion 4351 may have other shapes besides circular. Unlike FIG. 11, the edge 4352 of the defect portion 4351 may not have a closed shape.

The plurality of third conductive portions 45 shown in FIGS. 4, 7, 11 and 12 respectively penetrate the first member 1 and are connected to the first conductive portion 41 and the second conductive portion 43. The plurality of third conductive portions 45 are disposed in any one of the plurality of first through holes 14 or the second through holes 15. Although an example of the material which comprises the 3rd conductive part 45 is not limited, the material (for example, Cu which constitutes the 1st conductive layer 491 in the 1st conductive layer 491 in the 1st conductive part 41 or the 2nd conductive part 43) And may be identical to The third conductive portion 45 may be formed, for example, by plating, but not limited thereto.

As shown in FIG. 7, the plurality of third conductive portions 45 include at least one first portion 45 A and at least one second portion 45 B.

The at least one first portion 45A is connected to the first conductive portion 411 of the first conductive portion 41 and the first conductive portion 431 of the second conductive portion 43, respectively. As shown in FIG. 7, one or several of the at least one first portions 45 A may overlap the optical element 3 in a plan view.

At least one second portion 45 B is connected to the second conductive portion 412 of the first conductive portion 41 and the second conductive portion 432 of the second conductive portion 43. Preferably, the number of at least one first portion 45A is greater than the number of at least one second portion 45B. The number of at least one first portion 45A is, for example, 5 to 30. The number of at least one second portion 45B is, for example, 1 to 3. As shown in FIG. 7, the number of at least one first portion 45A that overlaps the optical element 3 may be greater than the number of at least one second portion 45B. The number of at least one first portion 45A and the number of at least one second portion 45B can be changed as appropriate.

As shown in FIG. 4, the bonding portion 83 is interposed between the optical element 3 and the first conductive portion 411. Bonding portion 83 is made of, for example, a conductive material. The joint 83 is derived from, for example, silver paste. Unlike the present embodiment, the joint 83 may be made of an insulating material. In the present embodiment, the bonding portion 83 is in contact with the side surface of the optical element 3 (the first side surface 3A, the second side surface 3B, the third side surface 3C, or the fourth side surface 3D) and the first conductive portion 411 preferable. This is preferable in that the bonding portion 83 can hold the optical element 3 more firmly.

The insulating portion 81 shown in FIG. 8 and the like is formed on the first surface 11 of the first member 1. For example, the insulating portion 81 may be called a resist layer. The insulating portion 81 exposes a portion of the first conductive portion 41 (specifically, a portion of the first conductive portion 411 and a portion of the second conductive portion 412). Insulating portion 81 includes an edge 81A and an edge 81B. The edge 81A is shaped along the first side 1A, the second side 1B, the third side 1C, and the fourth side 1D of the first member 1. The edge 81B surrounds the optical element 3 in plan view.

The functional element 58 shown in FIG. 6 and the like is disposed in the first conductive portion 411 in the first conductive portion 41. The functional element 58 is, for example, a semiconductor element, and more specifically, may be a zener diode. The optical device A1 may not have the functional element 58.

The first wire 51 shown in FIGS. 6 and 7 is made of a conductive material. The conductive material constituting the first wire 51 includes, for example, at least one of Cu, Ag, and Au. In the example shown in FIG. 6 and FIG. 7, in plan view, the first wire 51 extends so as to intersect the first direction X1. Unlike the example shown in FIG. 6 and FIG. 7, the first wire 51 may extend along the first direction X1 or may extend along the second direction Y1. The first wire 51 has a first end 511 and a second end 512. The first end 511 of the first wire 51 is joined to the optical element 3 (specifically, the first conductive layer 33), and in a plan view, two light emitting units 35 of the plurality of light emitting units 35. Located between Although the 1st end 511 is arranged at the 2nd side 3B side, the 1st end 511 may be arranged at the 3rd side 3C side. The second end 512 of the first wire 51 is joined to the second conductive portion 412 of the first conductive portion 41. The second end 512 of the first wire 51 is located in the second region R2 in plan view. As shown in FIG. 6, even if the second end 512 of the first wire 51 is positioned between the first end 511 of the first wire 51 and the air gap 17 of the first member 1 in the first direction X1. Good. As shown in FIG. 6, the second end 512 of the first wire 51 may be located between the optical element 3 and the air gap 17 of the first member 1 in the first direction X1. As shown in FIG. 6, the second end 512 of the first wire 51 may be located between the optical element 3 and the positioning unit 7 in the first direction X1.

The second wire 52 shown in FIGS. 6 and 7 is made of a conductive material. The conductive material constituting the second wire 52 includes, for example, at least one of Cu, Ag, and Au. In the example shown in FIGS. 6 and 7, in plan view, the second wire 52 extends along the second direction Y1. Unlike the example shown in FIG. 6 and FIG. 7, the second wire 52 may extend along the first direction X1 or may extend crossing the second direction Y1. The second wire 52 has a first end 521 and a second end 522. The first end 521 of the second wire 52 is joined to the functional element 58. The second end 522 of the second wire 52 is joined to the second conductive portion 412 of the first conductive portion 41. The second end 522 of the second wire 52 is located in the second region R2 in plan view. As shown in FIG. 6, even if the second end 522 of the second wire 52 is located between the first end 511 of the second wire 52 and the air gap 17 of the first member 1 in the first direction X1. Good. As shown in FIG. 6, the second end 522 of the second wire 52 may be located between the optical element 3 and the air gap 17 of the first member 1 in the first direction X1. As shown in FIG. 6, the second end 522 of the second wire 52 may be located between the optical element 3 and the positioning unit 7 in the first direction X1.

Unlike the example shown in FIG. 6 and FIG. 7, as shown in FIG. 15, the third wire 53 may be bonded to the optical element 3 and the first conductive portion 411. Alternatively, the optical element 3 may be electrically connected to the first conductive portion 41 without using a wire.

The member 6 shown in FIG. 2 and the like is fixed to the first member 1. More specifically, the member 6 is fixed to the first member 1 via the second member 2. The member 6 has a portion overlapping the optical element 3 in a plan view. The member 6 transmits the light 890 from the optical element 3. The member 6 can be made of an insulating material. The member 6 constituting the member 6 includes, for example, polyphthalamide, an epoxy resin, and a silicone-based material.

The front surface 61 and the back surface 62 are separated in the direction Z1 orthogonal to the front surface 61, and face away from each other. The front surface 61 and the back surface 62 are both flat.

The first side surface 6A and the second side surface 6B are separated in the first direction X1 and face opposite to each other. The first direction X1 is orthogonal to the direction Z1. The first side surface 6A and the second side surface 6B are both connected to the front surface 61 and the back surface 62. The first side 6A and the second side 6B are both flat.

The third side surface 6C and the fourth side surface 6D are separated in the second direction Y1 and face opposite to each other. The second direction Y1 is orthogonal to the first direction X1 and the direction Z1. The third side surface 6C and the fourth side surface 6D are both connected to the front surface 61 and the back surface 62. The third side surface 6C and the fourth side surface 6D are both flat.

As shown in FIG. 5 and the like, the first side surface 6A, the second side surface 6B, the third side surface 6C, and the fourth side surface 6D in the member 6 are the first side surface 1A, the second side surface in the first member 1, respectively. It may be flush with 1B, the 3rd side 1C, and the 4th side 1D.

The joint portion 87 is interposed between the member 6 and the second member 2, and joins the member 6 and the second member 2. The bonding portion 87 is made of, for example, an epoxy type, a silicone type, or an acrylic type material.

As shown in FIGS. 2 to 4 and the like, a support B1 (in the figure, the first member 1, the second member 2, the first conductive portion 41, the second conductive portion 43, and a plurality of third conductive portions) The portion 45, the member 6, the insulating portion 81, and the bonding portions 85 and 87) include a plurality of positioning portions 7. The plurality of positioning portions 7 are used to position the optical element 3 and the irradiation target range 811 by fixing to a part of the member 810. Specifically, the plurality of positioning portions 7 can be fixed to the plurality of positioning portions 812 of the member 810, respectively. Each of the plurality of positioning portions 7 may be a recess or a protrusion. In the example shown in FIG. 4, FIG. 5, etc., the plurality of positioning portions 7 are convex portions. Unlike the example shown in FIG. 4 and FIG. 5, the plurality of positioning portions 7 may be concave portions. In one variation, some of the plurality of positioning portions 7 may be recesses, and the remaining some may be protrusions. In another variation, the support B1 may not have the plurality of positioning portions 7 and may have only one positioning portion 7. As shown in FIG. 2, a bonding layer 815 may be disposed between the positioning unit 7 and the positioning unit 813. The bonding layer 815 is made of, for example, an epoxy-based, silicone-based or acrylic-based material.

In the example shown in FIGS. 2 to 6 and the like, the plurality of positioning portions 7 are a part of the member 6. As shown in FIG. 6, the plurality of positioning units 7 may be arranged at a position different from that of the optical element 3 in a plan view. As shown to the same figure, at least one part of any one of the several positioning part 7 may overlap 2nd area | region R2 in planar view. The optical element 3 is positioned between the plurality of positioning portions 7 and the first surface 11 in the direction Z1. The plurality of positioning portions 7 have surfaces 7S facing in the direction intersecting with the direction Z1. The surfaces 7S of the plurality of positioning portions 7 are the outermost edges of the optical device A1 having a closed shape of the support B1 in plan view (for example, the first side 1A, the second side 1B, and the third side in FIG. It may be located inside the side surface 1C and the fourth side surface 1D).

As shown in FIG. 5, FIG. 6, etc., the plurality of positioning units 7 include a first positioning unit 71 and a second positioning unit 72. As shown in FIG. 6, the first positioning portion 71 overlaps the first conductive portion 411 of the first conductive portion 41 in a plan view, and the second positioning portion 72 is a first conductive portion 41 in a plan view. And the second conductive portion 412 of the As shown in FIG. 6, the second end 512 of the first wire 51 is between the first end 511 of the first wire 51 and the first positioning portion 71 and the second positioning portion 72 in the first direction X1. It may be located.

Unlike the example shown in FIG. 4, as shown in FIG. 2, the positioning portion 7 may have the engaging portion 74 and the member 810 may have the engaging portion 814. The engagement portion 74 and the engagement portion 814 can engage with each other.

When manufacturing the optical device A1, the intermediate shown in FIG. 18 is manufactured and manufactured by dicing the first member 1, the second member 2, the member 6 and the like. In the figure, the dicing lines are indicated by the two-dot chain lines extending in the longitudinal direction.

In the present embodiment, the positioning section 7 positions the optical element 3 and the irradiation target area 811 by fixing to a part of the member 810 having the irradiation target area 811 to which the light 890 from the optical element 3 is irradiated. To do According to such a configuration, since the optical element 3 and the irradiation target range 811 can be positioned, the light 890 from the optical element 3 can be brought to the irradiation target range 811 more efficiently. Thereby, the power consumption of the optical device A1 can be further reduced.

For example, in the present embodiment, by positioning the member 6 and the member 810, the optical element 3 and the irradiation target range 811 are positioned. Since the member 6 can be disposed based on the position of the optical element 3, the configuration of the present embodiment is preferable because the positioning of the optical element 3 and the irradiation target range 811 can be realized with higher accuracy.

In particular, as described with reference to FIG. 6 and the like, when the light 890 emitted from the optical element 3 is planar light, the surface that emits the planar light (in FIG. 6, the surface of the optical element 3 It is possible to avoid, as much as possible, excessively increasing the size of (approximately corresponding to 31). Thereby, the excessive enlargement in planar view of the optical element 3 can be prevented as much as possible.

In the present embodiment, in the first member 1, the air gap 17 penetrating from the first surface 11 to the second surface 12 is formed, and the air gap 17 is hollow. According to such a configuration, when the optical device A1 is mounted on the wiring substrate 801, even if the space on the first surface 11 is filled with a gas (air), the gas can be inserted via the air gap 17. It can be emitted outside the optical device A1. This makes it possible to avoid, as much as possible, the problem of peeling off two parts (for example, the member 6 and the second member 2) in the optical device A1 when the optical device A1 is mounted.

In the present embodiment, the second end 512 of the first wire 51 is between the first end 511 of the first wire 51 and the air gap 17 of the first member 1 in the first direction X1 orthogonal to the first surface 11. It is located in Such a configuration is suitable for arranging the air gap 17 as far as possible from the optical element 3 in a plan view. Thereby, even if a liquid (for example, water) used for dicing intrudes into the air gap 17 from the second surface 12 side of the first member 1 during dicing when manufacturing the optical device A1, the liquid does not flow to the optical element 3 It can be avoided as much as possible.

In the present embodiment, the second end 522 of the second wire 52 is located between the optical element 3 and the air gap 17 of the first member 1 in the first direction X1 orthogonal to the first surface 11. Such a configuration is suitable for arranging the air gap 17 as far as possible from the optical element 3 in a plan view. Thereby, even if a liquid (for example, water) used for dicing intrudes into the air gap 17 from the second surface 12 side of the first member 1 during dicing when manufacturing the optical device A1, the liquid does not flow to the optical element 3 It can be avoided as much as possible.

In the present embodiment, the second end 522 of the second wire 52 is located between the optical element 3 and the positioning unit 7 in the first direction X1. Such a configuration is suitable for disposing the positioning portion 7 while reducing the distance between the second end 522 of the second wire 52 and the optical element 3 in the first direction X1. Thus, the optical device A1 having the positioning portion 7 can be miniaturized.

In the present embodiment, at least a part of the defect portion 4351 of the conductive portion 435 in the second conductive portion 43 overlaps the air gap 17 in plan view. According to such a configuration, at the time of dicing at the time of manufacturing the optical device A1, the portion of the second conductive portion 43 which constitutes the defect portion 4351 can hold the liquid (for example, water) used for dicing. As a result, the liquid can be prevented from entering the air gap 17 as much as possible. Thereby, the liquid can be prevented from reaching the optical element 3 as much as possible.

In the present embodiment, the edge 4352 of the defect portion 4351 of the conductive portion 435 in the second conductive portion 43 has a closed shape surrounding the air gap 17 in a plan view. According to such a configuration, the liquid can be more suitably suppressed from reaching the optical element 3.

In the present embodiment, in plan view, the first wire 51 extends in a cross direction to the first direction X1. Such a configuration is suitable for reducing the area of the second conductive portion 412 of the first conductive portion 41 in plan view. Thereby, the area in planar view of the 1st electric conduction part 411 can be enlarged more. As a result, the heat generated by the optical element 3 can be more efficiently released to the outside of the optical device A1.

In the present embodiment, the first end 511 of the first wire 51 is joined to the optical element 3 and is located between two light emitting units 35 of the plurality of light emitting units 35 in plan view. . According to such a configuration, the light 890 from the two light emitting units 35 further reduces the light contrast between the vicinity of the first end 511 of the surface 31 and the other region of the surface 31. As a result, it is possible to suppress that the vicinity of the first end 511 becomes extremely dark.

In the present embodiment, the plurality of third conductive portions 45 include at least one first portion 45 A connected to the first conductive portion 411 of the first conductive portion 41. According to such a configuration, the heat generated in the optical element 3 can be more efficiently released to the outside of the optical device A1 through the first conductive portion 41 and the first portion 45A.

In the present embodiment, the number of at least one first portion 45A is greater than the number of at least one second portion 45B. According to such a configuration, the heat generated in the optical element 3 can be more efficiently released to the outside of the optical device A1 via the first conductive portion 41 and the first portion 45A.

In the present embodiment, the inner surface 24 includes a first portion 241 and a second portion 242. The second portion 242 is connected to the first portion 241, and is curved outward from the optical element 3 to the second member 2 in a plan view. According to such a configuration, in the present embodiment, for example, the area of the surface 21 of the second member 2 can be increased as compared to the case where the second portion 242 is formed by three sides of a rectangle. As a result, the bonding area between the surface 21 of the second member 2 and the member 6 can be further increased, and an improvement in bonding strength between the second member 2 and the member 6 can be realized. The same applies to the fourth portion 244, the sixth portion 246, and the eighth portion 248.

In the present embodiment, a collet (not shown) for disposing the functional element 58 can be prevented from contacting the second portion 242 when the optical device A1 is manufactured.

<Modification>
A modification is described with reference to FIGS. 19 to 27.

In the following description, the same or similar components as those described above are denoted by the same reference numerals as those described above, and the description will be appropriately omitted. The above description can be appropriately applied to the configurations given the same reference numerals as the above. The techniques disclosed in the following modifications can be combined with the above-described embodiment and the other modifications.

The modified example shown in FIG. 19 differs from the optical device A1 in that the positioning portion 813 is a convex portion and the positioning portion 7 is a concave portion. As described above, the combination of the convex portion and the concave portion of the positioning portion 813 and the positioning portion 7 can be appropriately changed.

In the modification shown in FIG. 20, in the optical device A3, the side surfaces of the member 6 (for example, the first side surface 6A and the second side surface 6B) are the side surfaces of the first member 1 (for example, the first side surface 1A or the second side surface 1B). The optical device A1 differs from the optical device A1 in that it is located inside the.

In the modified example shown in FIG. 21, in the optical device A4, the positioning portion 7 is not a protrusion formed on the surface 61 of the member 6 but a side surface of the member 6 (for example, the first side surface 6A or the second side surface 6B) Differs from the above-described optical device A3 in that Thus, in the present modification, the outermost edge of the optical device A1 in which the surface 7S of the positioning portion 7 is the closed shape of the support B1 (for example, the first side 1A, the second side 1B, and the third side) 1C and the fourth side face 1D).

In the modification shown in FIG. 22, the optical device A5 does not include the second member 2, and the shape of the member 6 is different from that of the optical device A1. In the modified example shown in FIG. 23, in the optical device A6, the positioning portion 7 is not a projection formed on the surface 61 of the member 6 but a side surface (for example, the first side surface 6A or the second side surface 6B) of the member 6 Differs from the above-described optical device A5 in that

In the modification shown in FIG. 24, the optical device A7 mainly differs in the configuration of the first member 1 and the second member 2 from the optical device A3. The first member 1 shown in the figure is made of a conductive material. For example, the first member 1 of this modification may be referred to as a lead frame. The second member 2 is made of an insulating material or a conductive material. In the present modification, the second member 2 is made of an insulating material. As an insulating material which comprises the 2nd member 2, resin is mentioned. The second member 2 is formed, for example, using a mold, but not limited thereto.

In the modification shown in FIG. 25A, the optical device A8 differs from the optical device A6 in that the positioning portion 7 is not a part of the member 6 but a part of the second member 2. As shown in FIG. 25A, the member 6 is formed with a missing portion 611 which is missing. The defect portion 611 is, for example, a recess or an opening. FIG. 25A shows an example in which the defect portion 611 is a recess. The positioning unit 7 is disposed in the defect portion 611.

The optical device A81 of the modified example shown in FIG. 25B is different from the optical device A8 shown in FIG. 25A in that it includes the resin portion 9, and the other points are the same. The resin portion 9 may be made of a material that transmits the light 890 from the optical element 3. The resin portion 9 covers the optical element 3. The resin portion 9 may be made of, for example, a silicone type, an epoxy type, or an acrylic type material. The resin portion 9 may be formed of an optical device other than the optical device A8 (ie, the optical devices A1 to A7, A9 to A10).

In the modification shown in FIG. 26, the optical device A9 differs from the optical device A8 in that a part of the lower part of the second member 2 in the drawing constitutes the positioning portion 7. The positioning unit 7 can be fixed to the wiring substrate 801.

In the modification shown in FIG. 27, the optical device A10 is different from the optical device A1 in that the positioning device 7 is not provided.

The present disclosure is not limited to the embodiments described above. The specific configuration of each part of the present disclosure can be varied in design in many ways.

This disclosure includes examples according to the following appendices.
[Supplementary Note A1]
A support,
An optical element disposed on the support and emitting light;
The support includes at least one positioning portion, and the at least one positioning portion is fixed to a part of a member having an irradiation target range to which light from the optical element is irradiated, An optical apparatus for positioning with the irradiation target area.
[Supplementary Note A2]
The support has a first surface on which the optical element is disposed,
The optical device according to attachment A1, wherein the optical element is located between the at least one positioning portion and the first surface in a direction orthogonal to the first surface.
[Supplementary Note A3]
The optical device according to appendix A2, wherein the at least one positioning portion has a surface facing in a direction orthogonal to the direction orthogonal to the first surface.
[Supplementary Note A4]
The optical device according to appendix A3, wherein the surface of the at least one positioning unit is arranged at a position different from the optical element in plan view.
[Supplementary Note A5]
The support includes an edge that is in a closed shape, and the edge of the support is located on the outermost side of the optical device in plan view;
The optical device according to Appendix A3 or A4, wherein the surface of the at least one positioning part is located inside the edge of the support in a plan view.
[Supplementary Note A6]
The optical device according to any one of appendices A1 to A5, wherein the at least one positioning part is a convex part or a concave part.
[Supplementary Note A7]
The support is
A first member in which the optical element is disposed;
The optical device according to Appendix A2, further comprising: a second member fixed to the first member and overlapping the optical element in a direction orthogonal to the first surface.
[Supplementary Note A8]
The first member has the first surface and a second surface opposite to the first surface, and is insulating.
It further comprises a first conductive portion formed on the first surface of the first member,
The optical element includes a first conductive layer and a second conductive layer insulated from each other,
Appendix A7, wherein the first conductive portion includes a first conductive portion conductive to the second conductive layer of the optical element, and a second conductive portion conductive to the first conductive layer of the optical element Optical device.
[Supplementary Note A9]
The first conductive portion in the first conductive portion includes at least one defective portion which is lost in plan view,
The optical device according to attachment A8, wherein each of the at least one defect site of the first conductive site is a recess formed in the first conductive site or an opening formed in the conductive site.
[Supplementary Note A10]
In the first member, an air gap penetrating from the first surface to the second surface is formed,
The optical device according to Appendix A8 or A9, wherein the air gap is hollow.
[Supplementary Note A11]
The first conductive portion includes a deficient portion deficient in a plan view,
The optical device according to attachment A10, wherein at least a part of the defect portion in the first conductive portion overlaps the air gap in plan view.
[Supplementary Note A12]
The device further comprises a first wire having a first end and a second end, wherein the first end of the first wire is bonded to the optical element, and the second end of the first wire is the first end of the first wire. 1 joined to the second conductive portion of the conductive portion,
The second end of the first wire is located between the first end of the first wire and the air gap of the first member in a first direction orthogonal to the first surface. The optical device according to A10 or Supplementary note A11.
[Supplementary Note A13]
It further comprises a second conductive portion formed on the second surface of the first member,
The second conductive portion includes a conductive portion including a defective portion lost in plan view,
The optical device according to any one of appendices A10 to A12, wherein at least a part of the defect part of the conductive part in the second conductive part overlaps the air gap in a plan view.
[Supplementary Note A14]
The optical device according to attachment A13, wherein an edge of the defective portion of the conductive portion in the second conductive portion has a closed shape surrounding the air gap in a plan view.
[Supplementary Note A15]
The first member includes a first area and a second area adjacent to each other in a first direction across a virtual straight line,
The virtual straight line extends in the second direction, passing through the center of the first member in plan view,
The optical according to appendix A8, wherein the first direction is orthogonal to a direction orthogonal to the first surface, and the second direction is orthogonal to a direction orthogonal to the first surface and the first direction. apparatus.
[Supplementary Note A16]
In plan view, the area where the optical element and the first region overlap is larger than half of the area of the optical element in plan view,
The device further comprises a first wire having a first end and a second end, wherein the first end of the first wire is bonded to the optical element, and the second end of the first wire is the first end of the first wire. 1 joined to the second conductive portion of the conductive portion,
The optical device according to attachment A15, wherein the second end of the first wire is located in the second region in a plan view.
[Supplementary Note A17]
The optical device according to attachment A16, wherein in plan view the first wire extends across the first direction.
[Supplementary Note A18]
The optical device according to attachment A16 or A17, wherein in plan view at least a portion of the at least one positioning portion overlaps the second region.
[Supplementary Note A19]
The at least one positioning unit includes a first positioning unit and a second positioning unit,
The first positioning portion overlaps the first conductive portion of the first conductive portion in plan view, and the second positioning portion is in the second conductive portion of the first conductive portion in plan view The optical device according to any of Appendices A16 to A18, which overlaps.
[Supplementary Note A20]
The optical element includes a plurality of light emitting units, and the plurality of light emitting units are separated from each other in plan view, and each of the plurality of light emitting units emits light.
The light emitting device further comprises a first wire having a first end and a second end, wherein the first end of the first wire is bonded to the optical element, and in a plan view, the first end of the plurality of light emitting portions The optical device according to statement A16, located between two light emitting parts of
[Supplementary Note A21]
A second conductive portion formed on the second surface of the first member;
At least one third conductive portion penetrating the first member and connected to the first conductive portion and the second conductive portion;
The optical apparatus according to attachment A8, wherein the at least one third conductive portion includes at least one first portion connected to the first conductive portion of the first conductive portion.
[Supplementary Note A22]
The at least one third conductive portion includes at least one second portion connected to the second conductive portion of the first conductive portion,
The optical device according to attachment A21, wherein the number of the at least one first portion is larger than the number of the at least one second portion.
[Supplementary Note A23]
The second member has an inner surface surrounding the optical element,
The inner surface includes a first portion and a second portion,
The optical device according to attachment A7, wherein the second portion is connected to the first portion, and is curved from the optical element toward the outer side of the second member in plan view.
[Supplementary Note A24]
It further comprises a member fixed to the first member and transmitting light from the optical element,
The optical device according to appendix A7, wherein the member transmitting light has a portion overlapping the optical element in plan view.
[Supplementary Note A25]
An optical device according to appendix A1,
A wiring substrate on which the optical device is disposed;
A bonding portion for bonding the optical device and the wiring substrate;
And the member having the irradiation target area.

Second Embodiment
A semiconductor laser device A10 according to a second embodiment of the present disclosure will be described based on FIGS. 28 to 34. The codes used in the second to fifth embodiments have no particular correlation with the codes used in the first embodiment. The semiconductor laser device A10 includes a first terminal 11, a second terminal 12, a semiconductor laser element 30, a wire 40, a first light transmitting member 51, and a second light transmitting member 52.

FIG. 28 transmits the second light transmitting member 52 for the convenience of understanding. The second light transmitting member 52 transmitted in FIG. 28 is indicated by an imaginary line (imaginary line). FIG. 34 illustrates the wire 40 and the first light transmitting member 51 in addition to the semiconductor laser device 30.

The semiconductor laser device A10 shown in FIGS. 28 to 34 is of a type mounted on the surface of a wiring board of various electronic devices such as a smartphone. As shown in FIG. 28, in the thickness direction z of the semiconductor laser element 30 (hereinafter referred to as “plan view”), the semiconductor laser device A10 has a rectangular shape. Here, for convenience of explanation, the direction in which the long side of the semiconductor laser device A10 extends at right angles to the thickness direction z of the semiconductor laser device 30 (hereinafter abbreviated to “thickness direction z”) is referred to as “first direction x”. Call it The direction in which the short side of the semiconductor laser device A10 extends at right angles to both the thickness direction z and the first direction x is referred to as a "second direction y".

As shown in FIGS. 31 and 32, the first terminal 11 has a semiconductor laser element 30 electrically joined. The first terminal 11 is a conductive member that constitutes a part of the conductive path between the wiring substrate located outside and the semiconductor laser element 30. The first terminal 11 is a cathode of the semiconductor laser device A10. The first terminal 11 is formed of a metal lead frame made of Cu (copper) or the like. As shown in FIGS. 28 to 32, the first terminal 11 has a first connection surface 11A, a first mounting surface 11B, a first side surface 11C, a first curved portion 11D, and two protrusions 11E.

As shown in FIGS. 30 to 32, the first connection surface 11A faces the side where the semiconductor laser device 30 is located in the thickness direction z. The semiconductor laser device 30 is electrically bonded to the first connection surface 11A. In the semiconductor laser device A10, the first connection surface 11A is covered with an Ag (silver) plated layer. The plating layer is formed by electrolytic plating.

As shown in FIGS. 30 to 32, the first mounting surface 11B faces the opposite side to the first connection surface 11A. The first mounting surface 11B is used when mounting the semiconductor laser device A10 on a wiring board. In the semiconductor laser device A10, the first mounting surface 11B is covered with an alloy plating layer containing Sn (tin) as a main component. The plating layer is formed by electrolytic plating.

As shown in FIGS. 28 to 32, the first side surface 11C is connected to the first connection surface 11A and faces in both the first direction x and the second direction y. The first side surface 11C has two regions facing in the first direction x and two regions facing in the second direction y.

As shown in FIGS. 28 to 32, the first bending portion 11D intrudes into the inside of the first terminal 11 from both the first mounting surface 11B and the first side surface 11C. The first curved portion 11D is formed along the first side surface 11C in a plan view. The first curved portion 11D has a curved surface. The first curved portion 11D is formed by performing half etching on the lead frame.

As shown in FIGS. 28 to 32 (except for FIG. 31), the two protrusions 11E protrude in the second direction y from the two regions of the first side surface 11C facing the second direction y. The two protrusions 11E are part of a support member for supporting the first terminal 11 on the lead frame.

The second terminal 12 is spaced apart from the first terminal 11 in the first direction x, as shown in FIG. The wire 40 is connected to the second terminal 12. The second terminal 12 is a conductive member that constitutes a part of the conductive path between the semiconductor laser element 30 and the wiring substrate located outside with the wire 40. The second terminal 12 is an anode of the semiconductor laser device A10. The second terminal 12 is formed of a metal lead frame made of Cu or the like. In the semiconductor laser device A10, the first terminal 11 and the second terminal 12 are formed of the same lead frame. As shown in FIGS. 28 to 32, the second terminal 12 has a second connection surface 12A, a second mounting surface 12B, a second side surface 12C, a second curved portion 12D, and two protrusions 12E.

As shown in FIGS. 30 to 32, the second connection surface 12A faces the side (the side on which the semiconductor laser element 30 is located) to which the first connection surface 11A of the first terminal 11 faces in the thickness direction z. The wire 40 is connected to the second connection surface 12A. In the semiconductor laser device A10, the second connection surface 12A is covered with an Ag plating layer. The plating layer is formed by electrolytic plating.

As shown in FIGS. 30 to 32, the second mounting surface 12B faces away from the second connection surface 12A. The second mounting surface 12B is used when mounting the semiconductor laser device A10 on a wiring board. In the semiconductor laser device A10, the second mounting surface 12B is covered with an alloy plating layer containing Sn as a main component. The plating layer is formed by electrolytic plating.

As shown in FIGS. 28 to 32, the second side surface 12C is connected to the second connection surface 12A and faces in both the first direction x and the second direction y. The second side surface 12C has two regions facing in the first direction x and two regions facing in the second direction y.

As shown in FIGS. 28 to 32, the second curved portion 12D intrudes into the interior of the second terminal 12 from both the second mounting surface 12B and the second side surface 12C. The second curved portion 12D is formed along the second side surface 12C in a plan view. The second curved portion 12D has a curved surface. The second curved portion 12D is formed by subjecting the lead frame to half etching.

As shown in FIGS. 28 to 32 (except FIG. 31), the two protrusions 12E protrude in the second direction y from the two regions of the second side surface 12C facing the second direction y. The two protrusions 12E are part of a support member for supporting the second terminal 12 on the lead frame.

The semiconductor laser element 30 is a semiconductor element that emits laser light to the side to which the first connection surface 11A of the first terminal 11 faces in the thickness direction z. The semiconductor laser device 30 emits infrared (IR) light having a wavelength of 800 nm or more. The semiconductor laser element 30 is a vertical cavity surface emitting laser (VCSEL). As shown in FIGS. 28 and 31, in the semiconductor laser device A10, the semiconductor laser device 30 is electrically joined to the first terminal 11 such that the long side in a plan view extends along the first direction x. As shown in FIGS. 33 and 34, the semiconductor laser device 30 has a plurality of light emitting regions 30A, device side surfaces 30B, a first electrode 31, and a second electrode 32.

As shown in FIGS. 33 and 34, the plurality of light emitting regions 30A are in the form of protrusions (mesa shapes) formed to be separated from each other in plan view. The plurality of light emitting regions 30A protrude to the side to which the first connection surface 11A of the first terminal 11 faces in the thickness direction z. Laser light is emitted from each of the light emitting regions 30A. The plurality of light emitting regions 30A are covered by the second electrode 32. The second electrode 32 has a plurality of outlets 321 penetrating in the thickness direction z and corresponding to the respective light emitting areas 30A. Laser light is emitted from each of the light emitting regions 30A through the emission port 321.

As shown in FIGS. 31 to 33, the element side surface 30B faces in the direction orthogonal to the thickness direction z, that is, the first direction x and the second direction y. The element side surface 30B has two regions directed in the first direction x and two regions directed in the second direction y.

As shown in FIG. 34, the semiconductor laser device 30 is stacked in the order of the first semiconductor layer 302, the active layer 303, and the second semiconductor layer 304 on the semiconductor substrate 301 in the thickness direction z. The surface of the second semiconductor layer 304 is covered by the insulating layer 305. A current confinement layer 306 is disposed inside the second semiconductor layer 304. The components of the plurality of light emitting regions 30A include the active layer 303, the second semiconductor layer 304, the insulating layer 305, and the current confinement layer 306.

The semiconductor substrate 301 is made of an n-type semiconductor. The main component of the semiconductor substrate 301 is a compound semiconductor such as GaAs (gallium arsenide). As shown in FIG. 34, the first semiconductor layer 302 is stacked on the top surface of the semiconductor substrate 301. The first semiconductor layer 302 is made of an n-type semiconductor, and its constituent elements include an n-type DBR (Distributed Bragg Reflector) layer. The n-type DBR layer is an AlGaAs layer having a thickness of λp / 4 (λp: wavelength of light emitted from the active layer 303), and a plurality of stacked layers of two layers having different refractive indices. It is configured by

The first electrode 31 is disposed on the lower surface of the semiconductor substrate 301. The first electrode 31 is a cathode of the semiconductor laser device 30. The first electrode 31 is a metal layer containing, for example, Au (gold), and is formed by vapor deposition. As shown in FIG. 34, the first electrode 31 is electrically connected to the first semiconductor layer 302 through the semiconductor substrate 301. The first electrode 31 is electrically bonded to the first connection surface 11A of the first terminal 11 via the conductive bonding layer 39. Therefore, the first terminal 11 is electrically connected to the first semiconductor layer 302. The conductive bonding layer 39 is, for example, a synthetic resin (so-called Ag paste) containing silver.

The active layer 303 is stacked on the first semiconductor layer 302. The active layer 303 is a compound semiconductor that emits light with a wavelength of λp by spontaneous emission and stimulated emission. The length of λp is 940 nm or 850 nm.

The second semiconductor layer 304 is stacked on the active layer 303. The second semiconductor layer 304 is made of a p-type semiconductor, and the component includes a p-type DBR layer. The p-type DBR layer is an AlGaAs layer having a thickness of λp / 4 (λp: wavelength of light emitted from the active layer 303), and a plurality of stacked layers in which two layers having different refractive indices are combined. It is configured by The light emitted from the active layer 303 is reflected in the thickness direction by both the n-type DBR layer included in the first semiconductor layer 302 and the p-type DBR layer included in the second semiconductor layer 304, thereby causing resonance. Do. The resonated light becomes laser light.

The insulating layer 305 covers the surface of each of the first semiconductor layer 302 and the second semiconductor layer 304. The insulating layer 305 transmits light with a wavelength of 800 nm or more. The constituent material of insulating layer 305 is, for example, SiO ₂ . As shown in FIG. 34, the insulating layer 305 has a plurality of openings 305A penetrating in the thickness direction z and corresponding to the respective light emitting regions 30A. The second electrode 32 passes through each of the openings 305A.

The current confinement layer 306 is disposed inside the second semiconductor layer 304 and located in the vicinity of the active layer 303 in the thickness direction z. The current confinement layer 306 contains a large amount of Al (aluminum) and is made of a material that is easily oxidized. The current confinement layer 306 is formed by oxidizing a part of the p-type DBR layer included in the second semiconductor layer 304. Note that the current confinement layer 306 can be formed by ion implantation. As shown in FIG. 34, the current confinement layer 306 has an opening 306A penetrating in the thickness direction z. The opening 306A overlaps the exit opening 321 of the second electrode 32 in plan view. The second semiconductor layer 304 passes through the opening 306A. Thereby, current flows along the thickness direction z through the opening 306A.

The second electrode 32 is disposed to cover the insulating layer 305. The second electrode 32 is an anode of the semiconductor laser device 30. The second electrode 32 is a metal layer containing, for example, Au, and is formed by vapor deposition. The insulating layer 305 is exposed from the exit 321 of each of the second electrodes 32 described above. The second electrode 32 is electrically connected to the second semiconductor layer 304 through the plurality of openings 305A formed in the insulating layer 305. Further, the second electrode 32 has a bump portion 322 which is formed to protrude to the side (the side to which the first connection surface 11A of the first terminal 11 faces) away from the semiconductor laser element 30 in the thickness direction z. The bump part 322 is comprised from the ball bonding part obtained in the process of wire bonding.

The wire 40 connects the second electrode 32 of the semiconductor laser device 30 and the second terminal 12 as shown in FIG. 28 and FIG. The wire 40 is a conductive member that constitutes a part of the conductive path between the semiconductor laser element 30 and the wiring board located outside with the second terminal 12. The constituent material of the wire 40 is, for example, Au. The wire 40 is formed by wire bonding. The wire 40 has a first bonding portion 41 connected to the second terminal 12 and a second bonding portion 42 connected to the second electrode 32. The first bonding portion 41 is a ball bonding portion. In the semiconductor laser device A 10, the first bonding portion 41 is connected to the second connection surface 12 A of the second terminal 12. The second bonding portion 42 is a stitch bonding portion. As shown in FIG. 34, the second bonding portion 42 is connected to the bump portion 322 of the second electrode 32.

As shown in FIGS. 31, 32, and 34, the first light transmitting member 51 is supported by the semiconductor laser device 30, and overlaps the plurality of light emitting regions 30A of the semiconductor laser device 30 in plan view. “Supported by the semiconductor laser device 30” refers to a configuration supported by the semiconductor laser device 30 indirectly via other members, in addition to the configuration supported by the semiconductor laser device 30 by being in contact with the semiconductor laser device 30. including. In the semiconductor laser device A 10, the first light transmitting member 51 is supported by the semiconductor laser device 30 by being in contact with the second electrode 32 of the semiconductor laser device 30. Further, in a configuration in which the semiconductor laser element 30 is indirectly supported via another member, a polyimide covering the second electrode 32 or the like can be mentioned as the other member. The first light transmitting member 51 is light transmitting and electrically insulating. The first light transmitting member 51 transmits light having a wavelength of 800 nm or more. The Young's modulus (elastic coefficient) of the first light transmitting member 51 is lower than the Young's modulus of the second light transmitting member 52. The constituent material of the first light transmitting member 51 is silicone such as silicone gel. As a constituent material of the first light transmitting member 51, polyimide having a Young's modulus similar to that of silicone may be applied. In this case, a plurality of the light emitting openings 321 of the respective second electrodes 32 are provided. The openings need to be provided in the polyimide by photolithography. On the other hand, when silicone is applied to the constituent material of the first light transmitting member 51, it is not necessary to provide the plurality of openings. Therefore, in terms of the manufacturing process of the semiconductor laser device A10, silicone is more preferable than polyimide as a constituent material of the first light transmitting member 51. In the semiconductor laser device A 10, the first light transmitting member 51 covers the bump portion 322 of the second electrode 32 and the second bonding portion 42 of the wire 40. Further, in the semiconductor laser device A10, the first light transmitting member 51 electrically joins the semiconductor laser element 30 to the first terminal 11, and connects the wire 40 to the second terminal 12 and the second electrode 32. It is then formed by quantitative application using a dispenser.

As shown in FIGS. 31 and 32, the second light transmitting member 52 has a region located on the opposite side of the plurality of light emitting regions 30A of the semiconductor laser element 30 with the first light transmitting member 51 interposed therebetween. The configuration of the region includes, in addition to the configuration in contact with the first light transmitting member 51, a configuration in which another member is interposed between the first light transmitting member 51 and the region. In the semiconductor laser device A 10, the region is in contact with the first light transmitting member 51. The second light transmitting member 52 is light transmitting and electrically insulating. The second light transmitting member 52 transmits light having a wavelength of 800 nm or more. The Young's modulus of the second light transmitting member 52 is higher than the Young's modulus of the first light transmitting member 51.

As shown in FIGS. 28 to 32, in the semiconductor laser device A10, the second light transmitting member 52 covers the wire 40 and a part of each of the first terminal 11 and the second terminal 12. The constituent material of the second light transmitting member 52 is, for example, an epoxy resin or a silicone resin. In the semiconductor laser device A10, the second light transmitting member 52 is formed by molding. In the semiconductor laser device A 10, the first terminal 11 and the second terminal 12 are supported by the second light transmitting member 52. In the first curved portion 11D of the first terminal 11 and the second curved portion 12D of the second terminal 12, a part of the second light transmitting member 52 is positioned. The second light transmitting member 52 has a top surface 52A, a bottom surface 52B, two first side surfaces 52C, and two second side surfaces 52D.

As shown in FIGS. 30 to 32, the top surface 52A faces the side to which the first connection surface 11A of the first terminal 11 faces in the thickness direction z. The peripheral edge of the top surface 52A coincides with the peripheral edge of the semiconductor laser device A10 in plan view. The laser light emitted from the semiconductor laser device 30 is transmitted from the top surface 52A. Further, as shown in FIGS. 30 to 32, the bottom surface 52B faces the opposite side to the top surface 52A. As shown in FIG. 29, in the semiconductor laser device A10, the first mounting surface 11B of the first terminal 11 and the second mounting surface 12B of the second terminal 12 are exposed from the bottom surface 52B.

As shown in FIGS. 28 to 31, the two first side faces 52C face in the first direction x and are separated from each other in the first direction x. Both ends of the first side surface 52C in the thickness direction z are connected to the top surface 52A and the bottom surface 52B. Further, as shown in FIGS. 28 to 32 (except for FIG. 31), the two second side surfaces 52D face in the second direction y and are separated from each other in the second direction y. Both ends of the second side surface 52D in the thickness direction z are connected to the top surface 52A and the bottom surface 52B. Both ends of the second side surface 52D in the first direction x are connected to the two first side surfaces 52C. In the semiconductor laser device A10, the protruding portion 11E of the first terminal 11 and the protruding portion 12E of the second terminal 12 are exposed from the respective second side surfaces 52D.

First Modification
Next, a semiconductor laser device A11 according to a first modification of the second embodiment of the present disclosure will be described based on FIGS. 35 and 36. FIG. 35 passes through the second light transmitting member 52 for the convenience of understanding. The second light transmitting member 52 transmitted in FIG. 35 is indicated by an imaginary line.

In the semiconductor laser device A11, the configuration of the first light transmitting member 51 is different from that of the semiconductor laser device A10 described above.

As shown in FIGS. 35 and 36, the first light transmitting member 51 covers the device side surface 30B of the semiconductor laser device 30. Therefore, in the semiconductor laser device A11, the first light transmitting member 51 covers the entire semiconductor laser element 30. A first light transmitting member 51 intervenes between the semiconductor laser element 30 and the second light transmitting member 52.

Second Modified Example
Next, a semiconductor laser device A12 according to a second modification of the second embodiment of the present disclosure will be described based on FIG. Note that FIG. 37 transmits the second light transmitting member 52 for the convenience of understanding. The second light transmitting member 52 transmitted in FIG. 37 is indicated by an imaginary line.

In the semiconductor laser device A12, the bonding mode of the semiconductor laser element 30 is different from that of the semiconductor laser device A10 described above.

As shown in FIG. 37, in the semiconductor laser device A10, the semiconductor laser device 30 is electrically joined to the first terminal 11 so that the short side in a plan view extends along the first direction x.

Third Modified Example
Next, a semiconductor laser device A13 according to a third modification of the second embodiment of the present disclosure will be described based on FIG. The cross-sectional position in FIG. 38 is the same as the cross-sectional position in FIG.

As shown in FIG. 38, in the semiconductor laser device A13, the shape of the first light transmitting member 51 is not bulged in the thickness direction z like the first light transmitting member 51 of the semiconductor laser device A10, and is flat. It has become. In the semiconductor laser device A13, the bump portion 322 of the second electrode 32 of the semiconductor laser element 30 and the second bonding portion 42 of the wire 40 are exposed from the first light transmitting member 51. The first light transmitting member 51 is formed on the semiconductor laser element 30 in a pre-process (wafer process) of the semiconductor laser device A13. The first light transmitting member 51 is formed by printing so as to be in contact with the second electrode 32 using a mask. In the formation of the first light transmitting member 51, the first light transmitting member 51 is configured not to cover the bump portion 322.

According to the configuration of the semiconductor laser device A10, the first light transmitting member 51 is interposed between the plurality of light emitting regions 30A of the semiconductor laser element 30 and the second light transmitting member 52 in the thickness direction z. The Young's modulus of the first light transmitting member 51 is lower than the Young's modulus of the second light transmitting member 52. Accordingly, when an internal force due to an external force or thermal expansion acts on the second light transmitting member 52, the stress transmitted to the first light transmitting member 51 is smaller than the stress transmitted to the second light transmitting member 52. Therefore, the stress transmitted to the plurality of light emitting regions 30A by the external force or the like acting on the second light transmitting member 52 is relieved by the first light transmitting member 51. Therefore, according to the semiconductor laser device A10, the plurality of light emitting regions 30A can be protected from external force or the like.

In addition, since the first light transmitting member 51 protects the plurality of light emitting regions 30 A of the semiconductor laser element 30 from an external force or the like, the semiconductor laser element 30 can be covered by the second light transmitting member 52. This makes it possible to miniaturize the semiconductor laser device A10 as compared to, for example, the case of providing a translucent case.

The constituent material of the first light transmitting member 51 is required to be a material having a Young's modulus lower than that of the second light transmitting member 52 and having an electrical insulating property and a light transmitting property. Furthermore, since the plurality of light emitting regions 30A of the semiconductor laser element 30 generate heat, it is desirable that the constituent material of the first light transmitting member 51 be a material having excellent heat resistance. Therefore, silicone such as silicone gel is suitable as a constituent material of the first light transmitting member 51.

The wire 40 has a first bonding portion 41 and a second bonding portion 42. The first bonding portion 41 is connected to the second terminal 12. The second bonding portion 42 is connected to the second electrode 32 of the semiconductor laser device 30. As a result, when the wire 40 is formed by wire bonding, the thickness direction z of the wire 40 is shortened, so that the height of the semiconductor laser device A10 can be reduced.

The second electrode 32 of the semiconductor laser device 30 has a bump portion 322 formed so as to protrude to the side away from the semiconductor laser device 30 in the thickness direction z. The second bonding portion 42 of the wire 40 is connected to the bump portion 322. Thus, when the wire 40 is connected to the second electrode 32 by wire bonding, the second bonding portion 42 can be prevented from contacting the edge of the semiconductor laser element 30.

The first light transmitting member 51 covers the second bonding portion 42 of the wire 40. The region of the second electrode 32 to which the wire 40 is connected is disposed at a portion of the semiconductor laser element 30 formed in a projecting shape. Therefore, the first light transmitting member 51 can protect the portion from external force or the like.

Further, in the semiconductor laser device A 11, the first light transmitting member 51 covers the device side surface 30 B of the semiconductor laser device 30. Thus, the entire semiconductor laser device 30 can be protected from external force or the like.

Third Embodiment
A semiconductor laser device A20 according to a third embodiment of the present disclosure will be described based on FIG. 39 to FIG. In these drawings, the same or similar elements as or to those of the above-described semiconductor laser device A10 are denoted by the same reference numerals, to omit redundant description. 39 passes through the second light transmitting member 52 for the convenience of understanding. The second light transmitting member 52 transmitted in FIG. 39 is shown by an imaginary line.

The semiconductor laser device A20 differs from the above-described semiconductor laser device A10 in that the configurations of the first terminal 11, the second terminal 12, and the second light transmitting member 52 and the insulating substrate 20 are provided.

The insulating substrate 20 supports the first terminal 11 and the second terminal 12 as shown in FIGS. 39 and 41. The constituent material of the insulating substrate 20 is, for example, polychlorinated biphenyl (PCB) or glass epoxy resin. Insulating substrate 20 has main surface 20A and back surface 20B. The main surface 20A and the back surface 20B face in opposite directions in the thickness direction z. The main surface 20A faces the side where the semiconductor laser device 30 is located in the thickness direction z.

As shown in FIGS. 39 to 41, the first terminal 11 has a first connection portion 111, a first mounting portion 112, a first penetrating portion 113, and two first wiring portions 114. Each of the first connection portion 111, the first mounting portion 112, and the two first wiring portions 114 is a metal layer formed by electrolytic plating. For example, Cu, Ni (nickel) and Au are laminated on the metal layer. Moreover, the constituent material of the 1st penetration part 113 is Cu, for example. The first connection portion 111 is disposed on the main surface 20 A of the insulating substrate 20, and the first electrode 31 of the semiconductor laser device 30 is electrically joined via the conductive bonding layer 39. The first mounting portion 112 is disposed on the back surface 20B of the insulating substrate 20, and is used when mounting the semiconductor laser device A20 on a wiring substrate. The first penetrating portion 113 penetrates the insulating substrate 20 in the thickness direction z, and connects the first connection portion 111 and the first mounting portion 112 to each other. In the semiconductor laser device A 20, two first penetration parts 113 are arranged, but the number of arrangement places of the first penetration parts 113 is not limited to this. The two first wiring portions 114 are disposed on the main surface 20A and extend from the first connection portion 111 in the second direction y. The two first wiring parts 114 are conductive paths for forming the first connection part 111 and the first mounting part 112 by electrolytic plating.

As shown in FIGS. 39 to 41, the second terminal 12 has a second connection portion 121, a second mounting portion 122, a second penetrating portion 123, and two second wiring portions 124. Each of the second connection portion 121, the second mounting portion 122, and the two second wiring portions 124 is a metal layer formed by electrolytic plating. For example, Cu, Ni and Au are laminated on the metal layer. Moreover, the constituent material of the 2nd penetration part 123 is Cu, for example. The second connection portion 121 is disposed on the main surface 20 A of the insulating substrate 20, and the first bonding portion 41 of the wire 40 is connected. The second mounting portion 122 is disposed on the back surface 20B of the insulating substrate 20, and is used when mounting the semiconductor laser device A20 on a wiring substrate. The second penetrating portion 123 penetrates the insulating substrate 20 in the thickness direction z, and connects the second connection portion 121 and the second mounting portion 122 to each other. In the semiconductor laser device A20, one second through portion 123 is disposed, but the number of arrangement places of the second through portions 123 is not limited to this. The two second wiring portions 124 are disposed on the main surface 20A and extend from the second connection portion 121 in the second direction y. The two second wiring portions 124 are conductive paths for forming the second connection portion 121 and the second mounting portion 122 by electrolytic plating.

As shown in FIG. 41, the second light transmitting member 52 is disposed in contact with the main surface 20A of the insulating substrate 20. Since the bottom surface 52B of the second light transmitting member 52 is in contact with the main surface 20A, the second light transmitting member 52 is supported by the insulating substrate 20. Further, the second light transmitting member 52 is a portion of the first terminal 11 and the second terminal 12 disposed on the main surface 20A, the first connection portion 111, the two first wiring portions 114, and the second connection. It covers the portion 121 and the two second wiring portions 124.

According to the configuration of the semiconductor laser device A20, like the configuration of the semiconductor laser device A10 described above, the first light emitting region 30A of the semiconductor laser element 30 and the second light transmitting member 52 are A light transmitting member 51 intervenes. The Young's modulus of the first light transmitting member 51 is lower than the Young's modulus of the second light transmitting member 52. Therefore, the semiconductor laser device A20 can protect the plurality of light emitting regions 30A from external force and the like.

In addition, since the first light transmitting member 51 protects the plurality of light emitting regions 30 A of the semiconductor laser element 30 from an external force or the like, the semiconductor laser element 30 can be covered by the second light transmitting member 52. This makes it possible to miniaturize the semiconductor laser device A20 as compared to, for example, the case of providing a translucent case.

Since the second light transmitting member 52 is disposed in contact with the first connection surface 11A, the insulating substrate 20 supports the first terminal 11, the second terminal 12, and the second light transmitting member 52 in the semiconductor laser device A20. doing. Thereby, the structure of the semiconductor laser device A20 can be made more stable as compared with the structure of the semiconductor laser device A10 in which the second light transmitting member 52 supports the first terminal 11 and the second terminal 12.

Fourth Embodiment
A semiconductor laser device A30 according to a fourth embodiment of the present disclosure will be described based on FIG. 42 to FIG. In these drawings, the same or similar elements as or to those of the above-described semiconductor laser device A10 are denoted by the same reference numerals, to omit redundant description. 42 passes through the third light transmitting member 53 (details will be described later) for the convenience of understanding. FIG. 46 is a partially enlarged plan view of the semiconductor laser device 30, the first light transmitting member 51, and the second light transmitting member 52. As shown in FIG. FIG. 47 illustrates a wire 40 in addition to the semiconductor laser element 30, the first light transmitting member 51, and the second light transmitting member 52.

The semiconductor laser device A30 is different from the above-described semiconductor laser device A10 in that the configurations of the first light transmitting member 51 and the second light transmitting member 52 and the third light transmitting member 53 and the frame member 60 are provided.

As shown in FIGS. 44 to 46, the second light transmitting member 52 has a plurality of lens portions 521. In the semiconductor laser device A30, the second light transmitting member 52 is a microlens array. The plurality of lens portions 521 are formed corresponding to the light emitting regions 30 A of the respective semiconductor laser elements 30. For this reason, each lens portion 521 overlaps each light emitting area 30A in plan view. Each lens portion 521 is hexagonal in plan view. The plurality of lens portions 521 are lenses that are convex in the direction in which the light emitting region 30A protrudes. In the semiconductor laser device A30, the bump portion 322 of the second electrode 32 of the semiconductor laser element 30 and the second bonding portion 42 of the wire 40 are exposed from the first light transmitting member 51.

As shown in FIG. 47, the second light transmitting member 52 is joined to the second electrode 32 covering the plurality of light emitting regions 30A of the semiconductor laser element 30 via the first light transmitting member 51. The laser light emitted from each light emitting region 30A is transmitted through the first light transmitting member 51 and is incident on each lens portion 521 of the second light transmitting member 52. The laser light incident on each lens portion 521 is brought close to being parallel to the thickness direction z. That is, the plurality of lens units 521 is a collimator lens that converts incident light into collimated light with higher directivity. Laser light converted into collimated light is emitted from each lens portion 521. In FIG. 47, the height H (dimension in the thickness direction z) of the light emitting region 30A and the height h (dimension in the thickness direction z) of the lens portion 521 are illustrated.

The first light transmitting member 51 and the second light transmitting member 52 are formed on the semiconductor laser element 30 in a pre-process (wafer process) of manufacturing the semiconductor laser device A30. First, the first light transmitting member 51 is printed so as to be in contact with the second electrode 32 of the semiconductor laser device 30 using a mask. At this time, the first light transmitting member 51 is made not to cover the bump portion 322 of the second electrode 32. Next, the second light transmitting member 52 in the wafer state is bonded to the first light transmitting member 51. Finally, the semiconductor laser element 30 and the second light transmitting member 52 are cut and separated into pieces by dicing to obtain the first light transmitting member 51 and the second light transmitting member 52 disposed in the semiconductor laser element 30. be able to.

The frame member 60 surrounds the semiconductor laser element 30 and the wire 40, as shown in FIGS. The constituent material of the frame member 60 is, for example, polyphenylene sulfide (PPS). The first terminal 11 and the second terminal 12 are supported by the frame-like member 60. The frame-like member 60 has a top surface 60A, a bottom surface 60B, an outer peripheral surface 60C, and an inner peripheral surface 60D.

As shown in FIGS. 44 and 45, the top surface 60A faces the side to which the first connection surface 11A of the first terminal 11 faces in the thickness direction z. The top surface 60A is frame-shaped. As shown in FIGS. 43-45, the bottom surface 60B faces away from the top surface 60A. In the semiconductor laser device A30, the first mounting surface 11B of the first terminal 11 and the second mounting surface 12B of the second terminal 12 are exposed from the bottom surface 60B. As shown in FIGS. 42 to 45, the outer circumferential surface 60C has four regions, and faces the outside of the semiconductor laser device A30 in the first direction x and the second direction y. Both ends of the outer circumferential surface 60C in the thickness direction z are connected to the top surface 60A and the bottom surface 60B. The outer circumferential surface 60C stands in the thickness direction z. As shown in FIGS. 42, 44 and 45, the inner circumferential surface 60D has four regions and faces the inside of the semiconductor laser device A30 in the first direction x and the second direction y. The inner circumferential surface 60D faces the semiconductor laser device 30. One end of the inner circumferential surface 60D in the thickness direction z is connected to the top surface 60A. The inner peripheral surface 60D is inclined with respect to the thickness direction z, and the area formed by the peripheral edge of the inner peripheral surface 60D in plan view is maximum at a position connected to the top surface 60A in the thickness direction z.

As shown in FIGS. 42, 44 and 45, the frame-like member 60 has an opening 61, two first sides 621 and two second sides 622. In the semiconductor laser device A30, the frame-like member 60 further includes a connecting portion 63 in addition to the above. The opening 61 penetrates in the thickness direction z, and the outer edge in a plan view is rectangular. The opening 61 is a hollow area surrounded by the inner peripheral surface 60D of the frame-like member 60. The cross-sectional area of the opening 61 with respect to the thickness direction z is maximum at a position flush with the top surface 60A of the frame member 60, and the cross-sectional area gradually decreases as the semiconductor laser element 30 is approached.

As shown in FIG. 44, the two first side portions 621 extend in the second direction y and are separated from each other in the first direction x. As shown in FIG. 45, the two second sides 622 extend in the first direction x and are separated from each other in the second direction y. The two first sides 621 and the two second sides 622 surround the semiconductor laser device 30 and the wire 40 in plan view, and support the first terminal 11 and the second terminal 12. As shown in FIGS. 42 and 44, the connecting portion 63 connects the two second sides 622. The connecting portion 63 is interposed between the first terminal 11 and the second terminal 12 in the first direction x.

The third light transmitting member 53 closes the opening 61 of the frame-like member 60 as shown in FIGS. The third light transmitting member 53 has a flat plate shape, and is formed of a diffractive optical element (DOE). The collimated light emitted from each lens portion 521 of the second light transmitting member 52 enters the third light transmitting member 53. The third light transmitting member 53 converts incident light into approximately 15,000 to 30,000 dot light and emits the converted light. The projection position of each dot light can be freely set. As a result, the laser light emitted from the light emitting region 30A of each semiconductor laser element 30 can be concentrated into one projected dot light.

As shown in FIGS. 44 and 45, the third light transmitting member 53 has a front surface 53A and a back surface 53B. The surface 53A faces the side to which the first connection surface 11A of the first terminal 11 faces in the thickness direction z. The back surface 53B faces the opposite side of the surface 53A. The back surface 53B is bonded to the top surface 60A of the frame member 60 via an adhesive (not shown). The collimated light emitted from the second light transmitting member 52 is incident on the back surface 53 B and converted into dot light by the third light transmitting member 53. A plurality of dot lights are emitted from the surface 53A.

According to the configuration of the semiconductor laser device A30, like the configuration of the semiconductor laser device A10 described above, between the plurality of light emitting regions 30A of the semiconductor laser element 30 and the second light transmitting member 52 in the thickness direction z, A light transmitting member 51 intervenes. The Young's modulus of the first light transmitting member 51 is lower than the Young's modulus of the second light transmitting member 52. Therefore, the semiconductor laser device A30 can also protect the plurality of light emitting regions 30A from external force or the like.

In addition, in order to protect the plurality of light emitting regions 30A of the semiconductor laser element 30 from the external force or the like by the first light transmitting member 51, a plurality of second light transmitting members 52, which are microlens arrays, via the first light transmitting member 51 Can be bonded to the second electrode 32 covering the light emitting region 30A.

The semiconductor laser device A30 includes a second light transmitting member 52 that converts laser light into collimated light, a third light transmitting member 53 configured of a diffractive optical element, and a frame-shaped member 60. As a result, it is possible to emit a plurality of dot lights whose projection positions can be freely set from the semiconductor laser device A30. In addition, since the semiconductor laser element 30 has a plurality of light emitting regions 30A, the output of each dot light can be improved.

The frame member 60 has a connecting portion 63 connecting the two second side portions 622. The connecting portion 63 is located between the first terminal 11 and the second terminal 12 in the first direction x. Thereby, the rigidity of the frame-like member 60 can be improved while securing mutual electrical insulation between the first terminal 11 and the second terminal 12.

Fifth Embodiment
A semiconductor laser device A40 according to a fifth embodiment of the present disclosure will be described based on FIG. 48 and FIG. In these drawings, the same or similar elements as or to those of the above-described semiconductor laser device A10 are denoted by the same reference numerals, to omit redundant description. In FIG. 48, the third light transmitting member 53 is transmitted for the convenience of understanding.

The semiconductor laser device A40 includes the configurations of the first terminal 11, the second terminal 12, the first light transmitting member 51, and the second light transmitting member 52, and the insulating substrate 20, the third light transmitting member 53, and the frame member 60. The point is different from the above-described semiconductor laser device A10. Among these components, the first terminal 11, the second terminal 12, and the insulating substrate 20 are the same as the configuration of the above-described semiconductor laser device A20, and thus the description thereof is omitted here. Further, the configurations of the first light transmitting member 51, the second light transmitting member 52, and the third light transmitting member 53 are the same as the configuration of the semiconductor laser device A30 described above, and thus the description thereof is omitted here. Therefore, the configuration of the frame-like member 60 will be described here.

As shown in FIGS. 48 and 49, the frame-shaped member 60 is bonded to the main surface 20A of the insulating substrate 20 via the bonding layer 69. Since the bottom surface 60B of the frame-like member 60 is bonded to the main surface 20A via the bonding layer 69, the frame-like member 60 is supported by the insulating substrate 20. Therefore, in the semiconductor laser device A40, the insulating substrate 20 is configured to support the first terminal 11, the second terminal 12, and the frame member 60. The bottom surface 60B has the same shape as the top surface 60A of the frame-like member 60. Further, the bonding layer 69 is molded in accordance with the shape of the bottom surface 60B. The bonding layer 69 is, for example, a solder resist film having adhesiveness. The inner circumferential surface 60D of the frame-like member 60, like the outer circumferential surface 60C, stands up in the thickness direction z. In the semiconductor laser device A40, the frame-shaped member 60 does not have the connecting portion 63.

According to the configuration of the semiconductor laser device A40, like the configuration of the semiconductor laser device A10 described above, between the plurality of light emitting regions 30A of the semiconductor laser element 30 and the second light transmitting member 52 in the thickness direction z, A light transmitting member 51 intervenes. The Young's modulus of the first light transmitting member 51 is lower than the Young's modulus of the second light transmitting member 52. Therefore, the plurality of light emitting regions 30A can be protected from external force and the like also by the semiconductor laser device A40.

In addition, since the first light transmitting member 51 protects the plurality of light emitting areas 30A of the semiconductor laser device 30 from external force or the like, the semiconductor laser device A40 has a plurality of dots from the third light transmitting member 53 like the semiconductor laser device A30. It can emit light. Furthermore, the output of dot light can be improved by the semiconductor laser element 30 having a plurality of light emitting areas 30A.

Since the frame member 60 is bonded to the main surface 20A of the insulating substrate 20, the insulating substrate 20 supports the first terminal 11, the second terminal 12, and the frame member 60 in the semiconductor laser device A40. Thereby, the structure of the semiconductor laser device A40 can be made more stable as compared with the structure of the semiconductor laser device A30 in which the frame-like member 60 supports the first terminal 11 and the second terminal 12.

The second to fifth embodiments of the present disclosure include the examples according to the following appendices.
[Supplementary Note B1]
A semiconductor laser device including a first semiconductor layer, an active layer, and a second semiconductor layer, the active layer being disposed between the first semiconductor layer and the second semiconductor layer in the thickness direction, the thickness being A semiconductor laser device including a plurality of light emitting regions separated from one another in a direction view, and a part of each of the plurality of light emitting regions includes the active layer and the second semiconductor layer;
A first terminal electrically connected to the first semiconductor layer;
A second terminal electrically connected to the second semiconductor layer;
A first light transmitting member which has electrical insulation, is supported by the semiconductor laser element, and overlaps the plurality of light emitting regions when viewed in the thickness direction;
It is a 2nd light transmission member which has electric insulation and has a field which is located in the side opposite to a plurality of luminescence fields on both sides of the 1st light transmission member, Young's modulus of the 1st light transmission member A second light transmitting member having a Young's modulus lower than that of the second light transmitting member.
[Supplementary Note B2]
The semiconductor laser device is
A first electrode electrically connected to the first semiconductor layer;
And a second electrode electrically connected to the second semiconductor layer and covering the plurality of light emitting regions.
The semiconductor laser device according to claim B1, wherein the first light transmitting member is in contact with the second electrode.
[Supplementary Note B3]
The semiconductor laser device according to appendix B2, wherein the second light transmitting member is in contact with the first light transmitting member.
[Supplementary Note B4]
The semiconductor laser device according to appendix B2 or 3, wherein a constituent material of the first light transmitting member is silicone.
[Supplementary Note B5]
The first electrode is joined to the first terminal,
The semiconductor laser device according to any one of appendices B2 to B4, further comprising a wire bonded to the second electrode and the second terminal.
[Supplementary Note B6]
The semiconductor laser device according to attachment B5, wherein the wire has a first bonding portion bonded to the second terminal and a second bonding portion bonded to the second electrode.
[Supplementary Note B7]
The second electrode has a bump portion formed so as to protrude to the side away from the semiconductor laser device in the thickness direction,
The semiconductor laser device according to appendix B6, wherein the second bonding portion is connected to the bump portion.
[Supplementary Note B8]
The semiconductor laser device according to Appendix B6 or 7, wherein the second light transmitting member covers the wire, a part of the first terminal, and a part of the second terminal.
[Supplementary Note B9]
The semiconductor laser device according to appendix B8, wherein the first light transmitting member covers the second bonding portion.
[Supplementary Note B10]
The semiconductor laser device has a device side surface facing in a direction orthogonal to the thickness direction,
The semiconductor laser device according to appendix B9, wherein the first light transmitting member covers the side surface of the element.
[Supplementary Note B11]
The first terminal and the second terminal are composed of a metal lead frame,
The first terminal is
A first connection surface oriented in the thickness direction and electrically connected to the first electrode;
A first mounting surface facing away from the first connection surface;
The second terminal is
A second connection surface which is directed to the side in which the first connection surface faces in the thickness direction and to which the first bonding portion is connected;
And a second mounting surface facing away from the second connection surface.
The first terminal and the second terminal are supported by the second light transmitting member,
The semiconductor laser device according to any one of appendices B8 to B10, wherein the first mounting surface and the second mounting surface are each exposed from the second light transmitting member.
[Supplementary Note B12]
It further comprises an insulating substrate having a main surface and a back surface facing each other in the thickness direction,
The first terminal is
A first connection portion disposed on the main surface and electrically connected to the first electrode;
A first mounting unit disposed on the back surface;
And a first penetrating portion penetrating the insulating substrate in the thickness direction and connecting the first connection portion and the first mounting portion to each other,
The second terminal is
A second connection portion disposed on the main surface and electrically connected to the first bonding portion;
A second mounting unit disposed on the back surface;
And a second through portion penetrating the insulating substrate in the thickness direction and connecting the second connection portion and the second mounting portion to each other,
The semiconductor laser device according to any one of appendices B8 to B10, wherein the second light transmitting member is in contact with the main surface.
[Supplementary Note B13]
A frame member having an opening that surrounds the periphery of the semiconductor laser element and the wire in the thickness direction, and which penetrates in the thickness direction;
And a third light transmitting member configured of a diffractive optical element and closing the opening.
The second light transmitting member is formed corresponding to each of the light emitting regions, and includes a plurality of lens portions that bring light emitted from each of the light emitting regions close to a state parallel to the thickness direction. Have
The semiconductor laser device according to appendix B6 or 7, wherein the second light transmitting member is bonded to the second electrode via the first light transmitting member.
[Supplementary Note B14]
The semiconductor laser device according to appendix B13, wherein the second bonding portion is exposed from the first light transmitting member.
[Supplementary Note B15]
The first terminal is
A first connection surface oriented in the thickness direction and electrically connected to the first electrode;
A first mounting surface facing away from the first connection surface;
The second terminal is
A second connection surface which is directed to the side in which the first connection surface faces in the thickness direction and to which the first bonding portion is connected;
And a second mounting surface facing away from the second connection surface.
The frame-like member has electrical insulation,
The first terminal and the second terminal are supported by the frame-like member,
The semiconductor laser device according to appendix B14, wherein the first mounting surface and the second mounting surface are each exposed from the frame-like member.
[Supplementary Note B16]
The frame-like member is
Two sides spaced apart in a direction perpendicular to the thickness direction;
And a connecting portion connecting the two sides.
The semiconductor laser device according to appendix B15, wherein the connecting portion is interposed between the first terminal and the second terminal.
[Supplementary Note B17]
It further comprises an insulating substrate having a main surface and a back surface facing each other in the thickness direction,
The first terminal is
A first connection portion disposed on the main surface and electrically connected to the first electrode;
A first mounting unit disposed on the back surface;
And a first penetrating portion penetrating the insulating substrate in the thickness direction and connecting the first connection portion and the first mounting portion to each other,
The second terminal is
A second connection portion disposed on the main surface and electrically connected to the first bonding portion;
A second mounting unit disposed on the back surface;
And a second through portion penetrating the insulating substrate in the thickness direction and connecting the second connection portion and the second mounting portion to each other,
The semiconductor laser device according to appendix B14, wherein the frame-like member is joined to the main surface.

Claims

A support,
An optical element disposed on the support and emitting light;
The support includes at least one positioning portion, and the at least one positioning portion is fixed to a part of a member having an irradiation target range to which light from the optical element is irradiated, An optical apparatus for positioning with the irradiation target area.
The support has a first surface on which the optical element is disposed,
The optical device according to claim 1, wherein the optical element is located between the at least one positioning portion and the first surface in a direction orthogonal to the first surface.
The optical device according to claim 2, wherein the at least one positioning unit has a surface facing in a direction orthogonal to the direction orthogonal to the first surface.
The optical device according to claim 3, wherein the surface of the at least one positioning unit is disposed at a position different from the optical element in a plan view.
The support includes an edge that is in a closed shape, and the edge of the support is located on the outermost side of the optical device in plan view;
The optical device according to claim 3, wherein the surface of the at least one positioning portion is located inside the edge of the support in a plan view.
The optical device according to any one of claims 1 to 5, wherein each of the at least one positioning portions is a convex portion or a concave portion.
The support is
A first member in which the optical element is disposed;
The optical device according to claim 2, further comprising: a second member fixed to the first member and overlapping the optical element in a direction orthogonal to the first surface.
The first member has the first surface and a second surface opposite to the first surface, and is insulating.
It further comprises a first conductive portion formed on the first surface of the first member,
The optical element includes a first conductive layer and a second conductive layer insulated from each other,
The first conductive portion includes a first conductive portion conductive to the second conductive layer of the optical element, and a second conductive portion conductive to the first conductive layer of the optical element. Optical device as described.
The first conductive portion in the first conductive portion includes at least one defective portion which is lost in plan view,
The optical device according to claim 8, wherein each of the at least one defect site of the first conductive site is a recess formed in the first conductive site or an opening formed in the conductive site.
In the first member, an air gap penetrating from the first surface to the second surface is formed,
The optical device according to claim 8, wherein the air gap is hollow.
The first conductive portion includes a deficient portion deficient in a plan view,
The optical device according to claim 10, wherein at least a part of the defect portion in the first conductive portion overlaps the air gap in a plan view.
The device further comprises a first wire having a first end and a second end, wherein the first end of the first wire is bonded to the optical element, and the second end of the first wire is the first end of the first wire. 1 joined to the second conductive portion of the conductive portion,
The second end of the first wire is located between the first end of the first wire and the air gap of the first member in a first direction orthogonal to the first surface. An optical device according to claim 10 or 11.
It further comprises a second conductive portion formed on the second surface of the first member,
The second conductive portion includes a conductive portion including a defective portion lost in plan view,
The optical device according to any one of claims 10 to 12, wherein at least a part of the defect portion of the conductive portion in the second conductive portion overlaps the air gap in a plan view.
The optical device according to claim 13, wherein an edge of the defective portion of the conductive portion in the second conductive portion has a closed shape surrounding the air gap in a plan view.
The first member includes a first area and a second area adjacent to each other in a first direction across a virtual straight line,
The virtual straight line extends in the second direction, passing through the center of the first member in plan view,
9. The apparatus according to claim 8, wherein the first direction is orthogonal to a direction orthogonal to the first surface, and the second direction is orthogonal to a direction orthogonal to the first surface and the first direction. Optical device.
In plan view, the area where the optical element and the first region overlap is larger than half of the area of the optical element in plan view,
The device further comprises a first wire having a first end and a second end, wherein the first end of the first wire is bonded to the optical element, and the second end of the first wire is the first end of the first wire. 1 joined to the second conductive portion of the conductive portion,
The optical device according to claim 15, wherein the second end of the first wire is located in the second area in a plan view.
The optical device according to claim 16, wherein in a plan view, the first wire extends in a cross direction to the first direction.
The optical device according to claim 16, wherein at least a portion of the at least one positioning portion overlaps the second region in a plan view.
The at least one positioning unit includes a first positioning unit and a second positioning unit,
The first positioning portion overlaps the first conductive portion of the first conductive portion in plan view, and the second positioning portion is in the second conductive portion of the first conductive portion in plan view 19. An optical device according to any of the claims 16-18, which is overlapping.
The optical element includes a plurality of light emitting units, and the plurality of light emitting units are separated from each other in plan view, and each of the plurality of light emitting units emits light.
The light emitting device further comprises a first wire having a first end and a second end, wherein the first end of the first wire is bonded to the optical element, and in a plan view, the first end of the plurality of light emitting portions The optical device according to claim 16, located between two light emitting parts of
A second conductive portion formed on the second surface of the first member;

At least one third conductive portion penetrating the first member and connected to the first conductive portion and the second conductive portion;
The optical device according to claim 8, wherein the at least one third conductive portion includes at least one first portion connected to the first conductive portion of the first conductive portion.
The at least one third conductive portion includes at least one second portion connected to the second conductive portion of the first conductive portion,
22. The optical device of claim 21, wherein the number of the at least one first portion is greater than the number of the at least one second portion.
The second member has an inner surface surrounding the optical element,
The inner surface includes a first portion and a second portion,
The optical device according to claim 7, wherein the second portion is connected to the first portion, and is curved from the optical element toward the outer side of the second member in a plan view.
It further comprises a member fixed to the first member and transmitting light from the optical element,
The optical device according to claim 7, wherein the light transmitting member has a portion overlapping with the optical element in plan view.
An optical device according to claim 1;
A wiring substrate on which the optical device is disposed;
A bonding portion for bonding the optical device and the wiring substrate;
And the member having the irradiation target area.