JP2019160960A - Semiconductor light-emitting device - Google Patents

Abstract

To provide a semiconductor light-emitting device capable of improving reliability.SOLUTION: A semiconductor light-emitting device A1 includes: a support member 1; a cover 5 having translucency; and a VCSEL element 4, stored in a storage space 7 defined by the support member 1 and the cover 5, emitting light to one side in a z direction through a cover. A ventilation portion 6 is provided to allow the storage space 7 to communicate with the outside.SELECTED DRAWING: Figure 1

Description

  The present disclosure relates to a semiconductor light emitting device.

  Patent Document 1 discloses a semiconductor light emitting device using a VCSEL element. In this semiconductor light emitting device, the VCSEL element is accommodated in an accommodating space constituted by a support member.

JP2013-045845A

  The semiconductor light emitting device is required to operate properly while suppressing damage or the like in the manufacturing process.

  The present disclosure has been conceived under the circumstances described above, and an object of the present disclosure is to provide a semiconductor light emitting device capable of improving reliability.

  A semiconductor light-emitting device provided by the present disclosure is accommodated in an accommodation space defined by a support member, a light-transmitting cover, the support member and the cover, and passes through the cover in one direction in the first direction. A light emitting device including a VCSEL element that emits light to a side, and a ventilation portion that communicates the housing space to the outside.

  According to the present disclosure, the reliability of the semiconductor light emitting device can be improved.

  Other features and advantages of the present disclosure will become more apparent from the detailed description given below with reference to the accompanying drawings.

It is a perspective view showing a semiconductor light emitting device concerning a 1st embodiment of this indication. 1 is a plan view of a principal part showing a semiconductor light emitting device according to a first embodiment of the present disclosure. It is sectional drawing which follows the III-III line of FIG. It is sectional drawing which follows the IV-IV line of FIG. It is sectional drawing which follows the VV line of FIG. It is sectional drawing which follows the VI-VI line of FIG. It is sectional drawing which follows the VII-VII line of FIG. 1 is an enlarged plan view of a main part showing a semiconductor light emitting device according to a first embodiment of the present disclosure. It is a principal part expanded sectional view which follows the IX-IX line of FIG. FIG. 3 is an enlarged cross-sectional perspective view showing a VCSEL element of the semiconductor light emitting device according to the first embodiment of the present disclosure. 3 is an enlarged cross-sectional view of a main part showing a VCSEL element of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 6 is an enlarged cross-sectional view of a main part illustrating a first modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 6 is an enlarged cross-sectional view showing a main part of a second modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. FIG. 10 is an enlarged cross-sectional view of a main part showing a third modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. It is a principal part enlarged plan view which shows the 4th modification of the semiconductor light-emitting device which concerns on 1st Embodiment of this indication. It is a principal part enlarged plan view which shows the 5th modification of the semiconductor light-emitting device which concerns on 1st Embodiment of this indication. It is a principal part enlarged plan view which shows the 6th modification of the semiconductor light-emitting device which concerns on 1st Embodiment of this indication. It is a principal part enlarged plan view which shows the 7th modification of the semiconductor light-emitting device which concerns on 1st Embodiment of this indication. It is a principal part enlarged plan view which shows the 8th modification of the semiconductor light-emitting device which concerns on 1st Embodiment of this indication. It is a principal part enlarged plan view which shows the 9th modification of the semiconductor light-emitting device which concerns on 1st Embodiment of this indication. It is a principal part expanded sectional view which follows the XXI-XXI line of FIG. It is a top view showing the 10th modification of a semiconductor light emitting device concerning a 1st embodiment of this indication. It is a top view showing the 11th modification of a semiconductor light emitting device concerning a 1st embodiment of this indication. It is a principal part expanded sectional view which shows the semiconductor light-emitting device concerning 2nd Embodiment of this indication. It is a principal part expanded sectional view which shows the 1st modification of the semiconductor light-emitting device which concerns on 2nd Embodiment of this indication. It is a top view showing a semiconductor light emitting device concerning a 3rd embodiment of this indication. It is sectional drawing which follows the XXVII-XXVII line of FIG. It is sectional drawing which follows the XXVIII-XXVIII line | wire of FIG. It is a principal part expanded sectional view which shows the semiconductor light-emitting device concerning 3rd Embodiment of this indication. It is a principal part expanded sectional view which shows the semiconductor light-emitting device concerning 3rd Embodiment of this indication. It is a principal part expanded sectional view which shows the state which the semiconductor light-emitting device concerning 3rd Embodiment of this indication ventilated. It is a principal part expanded sectional view which shows the state which the semiconductor light-emitting device concerning 3rd Embodiment of this indication ventilated. It is sectional drawing which shows the semiconductor light-emitting device which concerns on 4th Embodiment of this indication. It is sectional drawing which shows the semiconductor light-emitting device which concerns on 5th Embodiment of this indication. It is sectional drawing which shows the semiconductor light-emitting device concerning 6th Embodiment of this indication.

  Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

  The terms “first”, “second”, “third”, and the like in this disclosure are merely used as labels, and are not intended to permutate those objects.

[First Embodiment]
1 to 11 show a semiconductor light emitting device according to a first embodiment of the present disclosure. The semiconductor light emitting device A1 of the present disclosure includes a support member 1, a VCSEL element 4, a cover 5, a ventilation portion 6, and an accommodation space 7.

FIG. 1 is a perspective view showing the semiconductor light emitting device A1. FIG. 2 is a main part plan view showing the semiconductor light emitting device A1. 3 is a cross-sectional view taken along line III-III in FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. FIG. 5 is a cross-sectional view taken along line VV in FIG. 6 is a cross-sectional view taken along the line VI-VI in FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. FIG. 8 is an enlarged plan view of a main part showing the semiconductor light emitting device A1. FIG. 9 is an enlarged cross-sectional view of a main part taken along line IX-IX in FIG. FIG. 10 is an enlarged cross-sectional perspective view showing the VCSEL element of the semiconductor light emitting device A1. FIG. 11 is an enlarged cross-sectional view of a main part showing a VCSEL element of the semiconductor light emitting device A1. In these drawings, the z direction corresponds to the first direction of the present disclosure, the x direction corresponds to the second direction of the present disclosure, and the y direction corresponds to the third direction of the present disclosure. In FIGS. 2 and 8, the cover 5 is omitted for convenience of understanding.

  The shape and size of the semiconductor light emitting device A1 are not particularly limited. In the illustrated example, the semiconductor light emitting device A1 has a rectangular parallelepiped shape. The x direction dimension of the semiconductor light emitting device A1 is, for example, about 1.6 mm to 4.0 mm, the y direction dimension is, for example, about 0.6 mm to 2.0 mm, and the z direction dimension is, for example, 0.3 mm to 0 mm. About 8 mm.

  The support member 1 supports the VCSEL element 4. The configuration of the support member 1 is not particularly limited. In the present embodiment, the support member 1 includes a support member first portion 2, a first conduction member 3A, and a second conduction member 3B.

  The first conducting member 3A and the second conducting member 3B are arranged apart from each other in the x direction. The first conducting member 3A is located on one side in the x direction, and the second conducting member 3B is located on the other side in the x direction. The first conducting member 3A and the second conducting member 3B are both made of a conductive material, for example, a metal such as Cu. Further, the first conductive member 3A and the second conductive member 3B may be formed by cutting a lead frame, for example. Further, Ag, Ni, Pd, Au, or the like may be plated at appropriate positions of the first conducting member 3A and the second conducting member 3B. The z direction dimension of the first conducting member 3A and the second conducting member 3B is, for example, 0.1 mm to 0.2 mm.

  The first conducting member 3A includes a first surface 31A, a second surface 32A, a first part 301A, a second part 302A, a third part 303A, a fourth part 304A, a fifth part 305A, a sixth part 306A, and a seventh part. 307A and an eighth part 308A. The VCSEL element 4 is mounted on the first conductive member 3A.

  The first surface 31A is a surface facing one side in the z direction (the upper side in the drawing in FIG. 3), and in the illustrated example, is a flat surface that is perpendicular to the z direction. The second surface 32A is a surface facing the other side in the z direction (the lower side in the drawing in FIG. 3) opposite to the first surface 31A. In the illustrated example, the second surface 32A is a flat surface that is perpendicular to the z direction. This is a serious aspect. In the illustrated example, the second surface 32A is smaller than the first surface 31A when viewed in the z direction and is included in the first surface 31A when viewed in the z direction. The second surface 32A is used as a part to be joined by solder or the like when the semiconductor light emitting device A1 is mounted on a circuit board or the like, for example.

  The first portion 301A is a portion where both the first surface 31A and the second surface 32A overlap when viewed in the z direction. That is, the first part 301A is a part including a part of the first surface 31A and the entire second surface 32A. The maximum dimension in the z direction of the first portion 301A is the same as the maximum dimension in the z direction of the first conducting member 3A. In the illustrated example, the dimension in the z direction of the first portion 301A is constant. In the illustrated example, the first portion 301A has a rectangular shape when viewed in the z direction.

  The second part 302A extends from the first part 301A to one side in the x direction (left side in the drawings in FIGS. 2 to 4). The second portion 302A has a part of the first surface 31A and does not have the second surface 32A. The z direction dimension of the second part 302A is smaller than the z direction dimension of the first part 301A. In the illustrated example, the y-direction dimension of the second part 302A is the same as or slightly larger than the y-direction dimension of the first part 301A. It can be said that the second part 302A extends from the first part 301A toward the side opposite to the second conducting member 3B.

  The third portion 303A extends from the first portion 301A to the other side in the x direction (right side in the drawings in FIGS. 2 to 4). The third portion 303A has a part of the first surface 31A and does not have the second surface 32A. The z direction dimension of the third part 303A is smaller than the z direction dimension of the first part 301A. In the illustrated example, the y-direction dimension of the third portion 303A is the same as or slightly larger than the y-direction dimension of the first portion 301A. It can be said that the third part 303A extends from the first part 301A toward the second conductive member 3B.

  The fourth portion 304A extends from the first portion 301A to one side in the y direction (left side in the drawings in FIGS. 5 and 6). The fourth portion 304A has a part of the first surface 31A and does not have the second surface 32A. The z direction dimension of the fourth part 304A is smaller than the z direction dimension of the first part 301A. In the illustrated example, the x direction dimension of the fourth part 304A is the same as or slightly larger than the x direction dimension of the first part 301A.

  The fifth portion 305A extends from the first portion 301A to the other side in the y direction (the right side in the drawings in FIGS. 5 and 6). The fifth portion 305A has a part of the first surface 31A and does not have the second surface 32A. The z direction dimension of the fifth part 305A is smaller than the z direction dimension of the first part 301A. In the illustrated example, the x direction dimension of the fifth part 305A is the same as or slightly larger than the x direction dimension of the first part 301A.

  The sixth portion 306A extends from the second portion 302A to one side in the x direction (left side in the drawings in FIGS. 2 to 4). The sixth portion 306A has a part of the first surface 31A and does not have the second surface 32A. The dimension in the z direction of the sixth part 306A is smaller than the dimension in the z direction of the first part 301A. In the illustrated example, the y-direction dimension of the sixth part 306A is smaller than the x-direction dimension of the first part 301A and smaller than the x-direction dimension of the second part 302A.

  The seventh portion 307A extends from the fourth portion 304A to one side in the y direction (left side in the drawings in FIGS. 5 and 6). The seventh portion 307A has a part of the first surface 31A and does not have the second surface 32A. The z direction dimension of the seventh part 307A is smaller than the z direction dimension of the first part 301A. In the illustrated example, the x-direction dimension of the seventh portion 307A is smaller than the x-direction dimension of the first portion 301A and smaller than the x-direction dimension of the fourth portion 304A.

  The eighth portion 308A extends from the fifth portion 305A to the other side in the y direction (the right side in the drawings in FIGS. 5 and 6). The eighth portion 308A has a part of the first surface 31A and does not have the second surface 32A. The dimension of the eighth part 308A in the z direction is smaller than the dimension of the first part 301A in the z direction. In the illustrated example, the x direction dimension of the eighth part 308A is smaller than the x direction dimension of the first part 301A and smaller than the x direction dimension of the fifth part 305A.

  The second conducting member 3B includes a first surface 31B, a second surface 32B, a first part 301B, a second part 302B, a third part 303B, a fourth part 304B, a fifth part 305B, a sixth part 306B, and a seventh part. 307B and an eighth part 308B. The second conducting member 3 </ b> B is electrically connected to the VCSEL element 4.

  The first surface 31B is a surface facing one side in the z direction (the upper side in the drawing in FIG. 3), and in the illustrated example, is a flat surface that is perpendicular to the z direction. The second surface 32B is a surface that faces the other side in the z direction opposite to the first surface 31B (the lower side in the drawing in FIG. 3), and in the illustrated example, is a flat surface that is perpendicular to the z direction. This is a serious aspect. In the illustrated example, the second surface 32B is smaller than the first surface 31B when viewed in the z direction and is included in the first surface 31B when viewed in the z direction. In the illustrated example, the first surface 31B is smaller than the first surface 31A when viewed in the z direction. The second surface 32B is smaller than the second surface 32A when viewed in the z direction. The second surface 32B is used as a part to be joined by solder or the like when the semiconductor light emitting device A1 is mounted on a circuit board or the like, for example.

  The first part 301B is a part where both the first surface 31B and the second surface 32B overlap when viewed in the z direction. That is, the first part 301B is a part including a part of the first surface 31B and the entire second surface 32B. The maximum dimension in the z direction of the first portion 301B is the same as the maximum dimension in the z direction of the second conducting member 3B. In the illustrated example, the dimension in the z direction of the first portion 301B is constant. In the illustrated example, the first portion 301B has a rectangular shape when viewed in the z direction. In the illustrated example, the first part 301B is smaller than the first part 301A when viewed in the z direction.

  The second part 302B extends from the first part 301B to the other side in the x direction (the right side in the drawings in FIGS. 2 to 4). The second portion 302B has a part of the first surface 31B and does not have the second surface 32B. The z direction dimension of the second part 302B is smaller than the z direction dimension of the first part 301B. In the illustrated example, the y-direction dimension of the second part 302B is the same as or slightly larger than the y-direction dimension of the first part 301B. It can be said that the second part 302B extends from the first part 301B toward the side opposite to the first conductive member 3A.

  The third portion 303B extends from the first portion 301B to one side in the x direction (left side in the drawings in FIGS. 2 to 4). The third portion 303B has a part of the first surface 31B and does not have the second surface 32B. The z direction dimension of the third part 303B is smaller than the z direction dimension of the first part 301B. In the illustrated example, the y-direction dimension of the third portion 303B is the same as or slightly larger than the y-direction dimension of the first portion 301B. It can be said that the third part 303B extends from the first part 301B toward the first conductive member 3A.

  The fourth part 304B extends from the first part 301B to one side in the y direction (left side in the drawing in FIG. 7). The fourth portion 304B has a part of the first surface 31B and does not have the second surface 32B. The z direction dimension of the fourth part 304B is smaller than the z direction dimension of the first part 301B. In the illustrated example, the x direction dimension of the fourth part 304B is the same as or slightly larger than the x direction dimension of the first part 301B.

  The fifth part 305B extends from the first part 301B to the other side in the y direction (the right side in the drawing in FIG. 7). The fifth part 305B has a part of the first surface 31B and does not have the second surface 32B. The z direction dimension of the fifth part 305B is smaller than the z direction dimension of the first part 301B. In the illustrated example, the dimension in the x direction of the fifth part 305B is the same as or slightly larger than the dimension in the x direction of the first part 301B.

  The sixth part 306B extends from the second part 302B to the other side in the x direction (the right side in FIGS. 2 to 4). The sixth portion 306B has a part of the first surface 31B and does not have the second surface 32B. The z direction dimension of the sixth part 306B is smaller than the z direction dimension of the first part 301B. In the illustrated example, the y-direction dimension of the sixth part 306B is smaller than the x-direction dimension of the first part 301B and smaller than the x-direction dimension of the second part 302B.

  The seventh part 307B extends from the fourth part 304B to one side in the y direction (the lower side in the drawing in FIG. 2). The seventh portion 307B has a part of the first surface 31B and does not have the second surface 32B. The z direction dimension of the seventh part 307B is smaller than the z direction dimension of the first part 301B. In the illustrated example, the x-direction dimension of the seventh part 307B is smaller than the x-direction dimension of the first part 301B, and smaller than the x-direction dimension of the fourth part 304B.

  The eighth part 308B extends from the fifth part 305B to the other side in the y direction (upper side in FIG. 2). The eighth part 308B has a part of the first surface 31B and does not have the second surface 32B. The dimension of the eighth part 308B in the z direction is smaller than the dimension of the first part 301B in the z direction. In the illustrated example, the x direction dimension of the eighth part 308B is smaller than the x direction dimension of the first part 301B, and smaller than the x direction dimension of the fifth part 305B.

  The support member first part 2 is made of an insulating material such as an epoxy resin or a silicone resin, and covers a part of each of the first conductive member 3A and the second conductive member 3B in this embodiment. In the illustrated example, the support member first portion 2 includes the first surface 21, the second surface 22, the third surface 23, the fourth surface 24, the fifth surface 25, the sixth surface 26, the inner surface 27, It has eight surfaces 28 and a groove 211.

  The first surface 21 is a surface facing one side in the z direction. In the illustrated example, the first surface 21 is a flat surface perpendicular to the z direction. In the illustrated example, the first surface 21 has a rectangular ring shape when viewed in the z direction.

  The second surface 22 is a surface facing the other side in the z direction opposite to the first surface 21. In the illustrated example, the second surface 22 is a flat surface perpendicular to the z direction. In the illustrated example, the second surface 22 exposes the second surface 32A of the first conductive member 3A and the second surface 32B of the second conductive member 3B. The second surface 22, the second surface 32A, and the second surface 32B are, for example, flush with each other.

  The third surface 23 is a surface facing one side in the x direction (left side in the drawing in FIG. 3), and is connected to the first surface 21 and the second surface 22. In the illustrated example, the third surface 23 is a surface perpendicular to the x direction. From the third surface 23, the sixth portion 306A of the first conductive member 3A is exposed.

  The fourth surface 24 is a surface facing the other side in the x direction (right side in the drawing in FIG. 3), and is connected to the first surface 21 and the second surface 22. In the illustrated example, the fourth surface 24 is a surface perpendicular to the x direction. From the fourth surface 24, the sixth portion 306B of the second conducting member 3B is exposed.

  The fifth surface 25 is a surface facing one side in the y direction (left side in the drawing in FIG. 5), and is connected to the first surface 21 and the second surface 22. In the illustrated example, the fifth surface 25 is a surface perpendicular to the y direction. From the fifth surface 25, the seventh portion 307A of the first conducting member 3A and the seventh portion 307B of the second conducting member 3B are exposed.

  The sixth surface 26 is a surface facing the other side in the y direction (the right side in the drawing in FIG. 5), and is connected to the first surface 21 and the second surface 22. In the illustrated example, the sixth surface 26 is a surface perpendicular to the y direction. From the sixth surface 26, the eighth portion 308A of the first conducting member 3A and the eighth portion 308B of the second conducting member 3B are exposed.

  As shown in FIG. 2, the inner side surface 27 has an annular shape when viewed in the z direction, and is a surface facing the inner side opposite to the third surface 23, the fourth surface 24, the fifth surface 25, and the sixth surface 26. It is. In the illustrated example, the inner surface 27 has an inner surface first portion 271, an inner surface second portion 272, an inner surface third portion 273, and an inner surface fourth portion 274. The inner side surface 27 exposes a part of the first surface 31A and a part of the second surface 32A.

  The inner surface first portion 271 is located on one side in the x direction and faces the other side in the x direction. In the illustrated example, the inner side first portion 271 is a flat surface slightly inclined with respect to the z direction.

  The inner side surface second part 272 is located on the other side in the x direction and faces the one side in the x direction. In the illustrated example, the inner side surface second portion 272 is a flat surface slightly inclined with respect to the z direction.

  The inner side surface third portion 273 is located on one side in the y direction and faces the other side in the y direction. In the illustrated example, the inner side surface third portion 273 is a flat surface slightly inclined with respect to the z direction.

  The inner side surface fourth portion 274 is located on the other side in the y direction and faces one side in the y direction. In the illustrated example, the inner side surface fourth portion 274 is a flat surface slightly inclined with respect to the z direction.

  In this example, the support member first part 2 includes the second part 302A, the third part 303A, the fourth part 304A, the fifth part 305A, the sixth part 306A, the seventh part 307A, and the first conductive member 3A. The second part 302B, the third part 303B, the fourth part 304B, the fifth part 305B, the sixth part 306B, the seventh part 307B, and the eighth part 308B of the eighth part 308A and the second conducting member 3B Covering from the side.

  The eighth surface 28 is a surface that is located in a region surrounded by the inner surface 27 when viewed in the z direction and faces the one side in the z direction (the upper side in FIG. 3). As shown in FIGS. 2 and 3, in the present embodiment, the eighth surface 28 is connected to the inner surface third portion 273 and the inner surface fourth portion 274, and the first surface 31A of the first conductive member 3A. It is located between the (third part 303A) and the first surface 31B (third part 303B) of the second conducting member 3B. In the illustrated example, the eighth surface 28 is a flat surface that is flush with the first surface 31A and the first surface 31B.

  The groove portion 211 is recessed from the first surface 21 and reaches the inner side surface 27 and the outside of the support member first portion 2. In the present embodiment, the third surface 23, the fourth surface 24, the fifth surface 25, and the sixth surface 26 correspond to the outside of the support member first portion 2. The specific shape, size and position of the groove 211 are not particularly limited. In the illustrated example, the groove 211 reaches the inner surface 27 on the other side in the y direction. More specifically, the groove portion 211 reaches the inner surface second portion 272 and the fourth surface 24.

  In the illustrated example, the groove portion 211 extends in a direction inclined with respect to the x direction. That is, the first opening region S1 that is a region where the groove portion 211 opens to the inner side surface 27 (inner side surface second portion 272), and the second opening region S2 that is a region where the groove portion 211 opens to the outside (fourth surface 24). Is a positional relationship shifted from each other in the y direction.

  In the illustrated example, the first opening region S1 is located closer to the inner side surface fourth portion 274 in the y direction, and more specifically, is adjacent to the inner side surface fourth portion 274. The second opening region S2 is provided at a position farther from the inner side surface fourth portion 274 in the y direction than the first opening region S1. In the illustrated example, the first opening area S1 and the second opening area S2 have the same y-direction dimension.

  As shown in FIGS. 8 and 9, in the illustrated example, the groove portion 211 has a first surface 2111, a pair of second surfaces 2112, a third surface 2113, and a fourth surface 2114.

  The first surface 2111 is a surface located in the deepest portion in the z direction in the groove portion 211. In the illustrated example, the first surface 2111 is a flat surface that is perpendicular to the z direction. The pair of second surfaces 2112 connects the first surface 2111 and the first surface 21, respectively. In the illustrated example, the pair of second surfaces 2112 is slightly inclined with respect to the z direction, but is not limited thereto.

  The third surface 2113 is interposed between the fourth surface 24 and one second surface 2112. The third surface 2113 is a convex curved surface when viewed in the z direction. A curved surface similar to the third surface 2113 may be interposed between the fourth surface 24 and the other second surface 2112.

  The fourth surface 2114 is interposed between the inner surface second portion 272 and the other second surface 2112. The fourth surface 2114 is a convex curved surface when viewed in the z direction. A curved surface similar to the fourth surface 2114 may be interposed between the inner side surface second portion 272 and one second surface 2112.

  The VCSEL element 4 is a light source in the semiconductor light emitting device A1, and emits light in a predetermined wavelength band. The VCSEL element 4 is die-bonded to the first portion 301A of the first conducting member 3A and is mounted on the first surface 31A of the first conducting member 3A.

  As shown in FIG. 3, the VCSEL element 4 is provided with a first electrode 41 and a plurality of light emitting regions 460 in plan view. The first electrode 41 is disposed on the other side in the x direction (closer to the second conducting member 3B). The plurality of light emitting regions 460 are discretely arranged in a region excluding the first electrode 41 in the plan view of the VCSEL element 4.

  As shown in FIGS. 10 and 11, the VCSEL element 4 of this example includes a first electrode 41, a second electrode 42, a second substrate 451, a fourth semiconductor layer 452, an active layer 453, a fifth semiconductor layer 454, a current. A narrowing layer 455, an insulating layer 456, and a conductive layer 457 are provided, and a plurality of light emitting regions 460 are formed. Note that the configuration example shown in the figure is an example of a VCSEL element as the VCSEL element 4, and is not limited to this configuration. FIG. 11 shows an enlarged portion including one light emitting region 460.

  The second substrate 451 is made of a semiconductor. A semiconductor constituting the second substrate 451 is, for example, GaAs. The semiconductor constituting the second substrate 451 may be other than GaAs.

  The active layer 453 is made of, for example, a compound semiconductor that emits light having a wavelength of 980 nm (hereinafter referred to as “λa”) by spontaneous emission and stimulated emission. The active layer 453 is located between the fourth semiconductor layer 452 and the fifth semiconductor layer 454.

  The fourth semiconductor layer 452 is typically a DBR (Distributed Bragg Reflector) layer and is formed on the second substrate 451. The fourth semiconductor layer 452 is made of a semiconductor having the first conductivity type. In this example, the first conductivity type is n-type. The fourth semiconductor layer 452 is configured as a DBR for efficiently reflecting the light emitted from the active layer 453. More specifically, the active layer 453 is formed by overlapping a plurality of pairs of two layers each having an AlGaAs layer having a thickness of λa / 4 and having different reflectivities.

  The fifth semiconductor layer 454 is typically a DBR layer and is made of a semiconductor having the second conductivity type. In this example, the second conductivity type is p-type. Unlike the present embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. A fourth semiconductor layer 452 is located between the fifth semiconductor layer 454 and the second substrate 451. The fifth semiconductor layer 454 is configured as a DBR for efficiently reflecting the light emitted from the active layer 453. More specifically, the fifth semiconductor layer 454 is configured by overlapping a plurality of pairs of two layers, each of which is an AlGaAs layer having a thickness λa / 4 and each having a different reflectance.

  The current confinement layer 455 is located in the fifth semiconductor layer 454. The current confinement layer 455 is made of a layer that contains a large amount of Al and is easily oxidized, for example. The current confinement layer 455 is formed by oxidizing this oxidizable layer. The current confinement layer 455 is not necessarily formed by oxidation, and may be formed by other methods (for example, ion implantation). An opening 4551 is formed in the current confinement layer 455. A current flows through the opening 4551.

The insulating layer 456 is formed on the fifth semiconductor layer 454. The insulating layer 456 is made of, for example, SiO ₂ . An opening 4561 is formed in the insulating layer 456.

  The conductive layer 457 is formed over the insulating layer 456. The conductive layer 457 is made of a conductive material (eg, metal). The conductive layer 457 is electrically connected to the fifth conductive 354 through the opening 4561 of the insulating layer 456. The conductive layer 457 has an opening 4571.

  The light emitting region 460 is a region where light from the active layer 453 is emitted directly or after reflection. In this example, the light emitting region 460 has an annular shape in plan view, but the shape is not particularly limited. In the light emitting region 460, the fifth semiconductor layer 454, the current confinement layer 455, the insulating layer 456, and the conductive layer 457 described above are stacked, and the opening 4551 of the current confinement layer 455, the opening 4561 of the insulating layer 456, and the opening 4571 of the conductive layer 457. Etc. are provided. In the light emitting region 460, light from the active layer 453 is emitted through the opening 4571 of the conductive layer 457.

  The first electrode 41 is made of, for example, metal and is electrically connected to the fifth semiconductor layer 454. The second electrode 42 is formed on the back surface of the second substrate 451 and is made of, for example, metal. The second electrode 42 is die-bonded to the first portion 301A (first surface 31A) with, for example, a paste containing a metal such as Ag or solder. Thereby, the second electrode 42 is electrically connected to the first conductive member 3A.

  In the present embodiment, the first electrode 41 is electrically connected to the second conductive member 3 </ b> B via the first conductive bonding material 49. The first electrode 41 is made of, for example, a metal such as Au, and is bonded to the first electrode 41 and the first portion 301B (first surface 31B) of the second conducting member 3B.

  In the illustrated example, as shown in FIG. 2, the center line CL1 in the x direction of the support member 1 and the center line CL2 in the x direction of the VCSEL element 4 are shifted from each other. The first opening region S1 is provided at a position that does not overlap the VCSEL element 4 when viewed in the x direction. The second opening region S2 is provided at a position overlapping the VCSEL element 4 when viewed in the x direction. In the illustrated example, the entire second opening region S2 overlaps the VCSEL element 4.

  The cover 5 is made of a material that transmits light from the VCSEL element 4, and is made of, for example, transparent glass or resin. The cover 5 is fixed to the support member 1. In the present embodiment, the cover 5 is bonded to the first surface 21 of the support member first portion 2 via a bonding layer 59. The bonding layer 59 is an adhesive mainly composed of resin or the like, for example.

  The shape and size of the cover 5 are not particularly limited, and in the illustrated example, the cover 5 has a rectangular plate shape as viewed in the z direction. The cover 5 has a first surface 51, a second surface 52, a third surface 53, a fourth surface 54, a fifth surface 55 and a sixth surface 56.

  The first surface 51 is a surface facing one side in the z direction. The second surface 52 is a surface facing the other side opposite to the first surface 51 in the z direction. The third surface 53 is a surface facing one side in the x direction, and is flush with the third surface 23 in the illustrated example. The fourth surface 54 is a surface facing the other side in the x direction and is flush with the fourth surface 24. The fifth surface 55 is a surface facing one side in the y direction, and is flush with the fifth surface 25 in the illustrated example. The sixth surface 56 is a surface facing the other side in the y direction, and is flush with the sixth surface 26 in the illustrated example.

  In the illustrated example, the second surface 52 of the cover 5 and the first surface 21 of the support member first portion 2 are joined by a joining layer 59. As shown in FIG. 7, in the present example, the bonding layer 59 is provided at a position avoiding the groove 211 of the support member first portion 2.

  The accommodation space 7 is a space for accommodating the VCSEL element 4. In the present embodiment, the accommodation space 7 is a space surrounded by the support member 1 and the cover 5. More specifically, the accommodation space 7 includes the inner surface 27 and the eighth surface 28 of the support member first portion 2, the first surface 31A of the first conducting member 3A, the first surface 31B of the second conducting member 3B, and the cover. 5 is a space surrounded by the second surface 52.

  The ventilation part 6 allows the accommodation space 7 to communicate with the outside of the semiconductor light emitting device A1. In the present embodiment, the accommodation space 7 is configured by the groove portion 211 of the support member first portion 2 and the second surface 52 of the cover 5. As clearly shown in FIG. 9, the accommodation space 7 is surrounded by a first surface 2111, a pair of second surfaces 2112, and a second surface 52. Further, in the illustrated example, the bonding layer 59 is not provided between the second surface 52 and the groove portion 211. The first opening area S1 and the second opening area S2 are opening areas of the ventilation portion 6, respectively. That is, the ventilation portion 6 of this example reaches the inner side second portion 272 and the fourth surface 24 of the inner side surface 27.

  Next, the operation of the semiconductor light emitting device A1 will be described.

  According to the present embodiment, the accommodation space 7 communicates with the outside via the ventilation portion 6. When the semiconductor light emitting device A1 is mounted on, for example, a circuit board, the gas in the accommodation space 7 expands when heated in a reflow furnace or the like. This expanded gas can be guided to the outside through the ventilation part 6. Thereby, it is possible to prevent the internal pressure of the accommodation space 7 from becoming unduly high and to prevent the cover 5 from being detached from the support member 1, for example. Therefore, the reliability of the semiconductor light emitting device A1 can be improved.

  In the present embodiment, the ventilation portion 6 is configured by providing the groove portion 211 in the support member first portion 2. The support member first portion 2 is made of, for example, resin, and is molded by, for example, a mold. It is possible to form the groove 211 in the support member first portion 2 with higher accuracy. Therefore, it is possible to provide the groove part 211 (ventilation part 6) having a desired shape and size at a desired position.

  As shown in FIG. 2, the ventilation portion 6 (groove portion 211) communicates with the accommodation space 7 from the other side in the x direction. In the semiconductor light emitting device A1, the VCSEL element 4 is disposed on one side in the x direction where the first conductive member 3A is located. For this reason, it is possible to increase the distance between the VCSEL element 4 and the ventilation part 6, and even if an unintended object (for example, a cleaning liquid) enters the ventilation part 6, this object reaches the VCSEL element 4. This can be suppressed. It is preferable for protection of the VCSEL element 4 that the center line CL2 of the VCSEL element 4 is located on one side in the x direction with respect to the center line CL1 of the support member 1.

  Since the ventilation part 6 (groove part 211) is provided to be inclined with respect to the x direction, it is possible to extend a path through which an unintended object enters the ventilation part 6. This is preferable for protecting the VCSEL element 4.

  Since the first opening region S1 is displaced from the VCSEL element 4 in the x-direction view, it is possible to more reliably suppress an unintended object that has entered from the ventilation portion 6 from reaching the VCSEL element 4.

  By mounting the VCSEL element 4 on the first conducting member 3A made of metal, the heat from the VCSEL element 4 can be radiated more efficiently to the outside. The first conducting member 3A includes the second part 302A, the third part 303A, the fourth part 304A, the fifth part 305A, the sixth part 306A, the seventh part 307A, and the eighth part 308A. It is preferable for preventing the member 3 </ b> A from coming off the support member first part 2 to the other side in the z direction. In addition, the second conductive member 3B includes the second part 302B, the third part 303B, the fourth part 304B, the fifth part 305B, the sixth part 306B, the seventh part 307B, and the eighth part 308B. It is preferable for preventing the two conducting member 3B from coming off from the support member first portion 2 to the other side in the z direction.

  12-35 illustrate other embodiments of the present disclosure. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.

[First Embodiment First Modification]
FIG. 12 is an essential part enlarged cross-sectional view showing a first modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. The semiconductor light emitting device A11 of this example is different from the embodiment described above in the cross-sectional shape of the groove 211. The groove portion 211 of this example has a first surface 2111, a pair of second surfaces 2112, and a pair of fifth surfaces 2115.

  The first surface 2111 is a surface located in the deepest portion in the z direction in the groove portion 211. In the illustrated example, the first surface 2111 is a flat surface that is perpendicular to the z direction. The pair of second surfaces 2112 is connected to the first surface 2111. The second surface 2112 is inclined with respect to the z direction, for example. The pair of fifth surfaces 2115 are interposed between the first surface 2111 and the pair of second surfaces 2112. The fifth surface 2115 is a concave curved surface. Also in this example, the reliability of the semiconductor light emitting device A11 can be improved.

[First Embodiment Second Modification]
FIG. 13 is an essential part enlarged cross-sectional view showing a second modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. The semiconductor light emitting device A12 of this example is different from the example described above in the shape of the groove 211. The groove portion 211 of this example has a sixth surface 2116. The sixth surface 2116 is a curved surface having both ends in the y direction connected to the first surface 21 and recessed from the first surface 21 to the other side in the z direction (the lower side in the figure). Also in this example, the reliability of the semiconductor light emitting device A12 can be improved.

[First Embodiment Third Modification]
FIG. 14 is an essential part enlarged cross-sectional view illustrating a third modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. The semiconductor light emitting device A13 of this example is different from the example described above in the shape of the groove 211. The groove portion 211 of this example has a pair of second surfaces 2112. Each of the pair of second surfaces 2112 is connected to the first surface 21 and is connected to each other. The pair of second surfaces 2112 is inclined with respect to the z direction. Also in this example, the reliability of the semiconductor light emitting device A13 can be improved.

  As shown in the semiconductor light emitting device A1 and the semiconductor light emitting devices A11 to A13 which are the modifications thereof, the cross-sectional shape of the groove 211 (ventilation portion 6) is not particularly limited. These cross-sectional shapes can be appropriately employed in the following modifications and embodiments.

[First Embodiment Fourth Modification]
FIG. 15 is an essential part enlarged plan view showing a fourth modification example of the semiconductor light emitting device according to the first embodiment of the present disclosure. The semiconductor light emitting device A14 of this example is different from the above-described example in the shape of the groove 211 when viewed in the z direction. In the groove portion 211 of this example, the y-direction dimension of the first opening area S1 is larger than the y-direction dimension of the second opening area S2. Further, the dimension in the y direction of the groove portion 211 decreases as it goes from the inner surface second portion 272 to the fourth surface 24. That is, the groove 211 has a tapered shape that is small on the fourth surface 24 side (external side) when viewed in the z direction.

  Also in this example, the reliability of the semiconductor light emitting device A14 can be improved. Further, by reducing the dimension in the y direction of the second opening region S2, it is possible to further suppress intrusion of an unintended object.

[First Embodiment Fifth Modification]
FIG. 16 is an essential part enlarged plan view illustrating a fifth modification example of the semiconductor light emitting device according to the first embodiment of the present disclosure. The semiconductor light emitting device A15 of this example is different from the above-described example in the shape of the groove 211 when viewed in the z direction. In the groove portion 211 of this example, the y-direction dimension of the first opening area S1 is smaller than the y-direction dimension of the second opening area S2. In addition, the dimension in the y direction of the groove portion 211 increases as it goes from the inner surface second portion 272 to the fourth surface 24. That is, the groove portion 211 has a tapered shape that is large on the fourth surface 24 (external side) when viewed in the z direction.

  Also in this example, the reliability of the semiconductor light emitting device A15 can be improved. Further, by reducing the dimension in the y direction of the first opening region S1, even if an unintended object enters the groove 211 (ventilation portion 6) from the fourth surface 24 side (external side), the first opening region S1 Intrusion to the ventilation part 6 can be suppressed.

[First Embodiment Sixth Modification]
FIG. 17 is an essential part enlarged plan view illustrating a sixth modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. The semiconductor light emitting device A16 of this example is different from the above example in the shape of the groove 211 as viewed in the z direction. The groove portion 211 in this example has a shape along the x direction and is parallel to the x direction. Further, the groove portion 211 is provided adjacent to the inner side surface fourth portion 274. Also in this example, the reliability of the semiconductor light emitting device A16 can be improved.

[First Embodiment Seventh Modification]
FIG. 18 is an essential part enlarged plan view showing a seventh modification example of the semiconductor light emitting device according to the first embodiment of the present disclosure. The semiconductor light emitting device A17 of this example is different from the above-described example in the shape of the groove 211 in the z direction. The groove part 211 of this example includes a first part 211a, a second part 211b, and a third part 211c. The first part 211a is connected to the inner side surface second part 272 and has a shape extending in the x direction. The third part 211c is connected to the fourth surface 24 and has a shape extending in the x direction. The second part 211b is connected to the first part 211a and the third part 211c and extends in a direction intersecting the x direction, for example, along the y direction. Such a groove portion 211 has a so-called crank shape in the z direction.

  Also in this example, the reliability of the semiconductor light emitting device A17 can be improved. In addition, by forming the groove portion 211 in a crank shape, intrusion of an object can be more reliably suppressed in the second portion 211b, for example, if not intended.

[First Embodiment Eighth Modification]
FIG. 19 is an essential part enlarged plan view illustrating an eighth modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. The semiconductor light emitting device A18 of this example is different from the above-described embodiment in the position of the groove 211 in the y direction. The groove portion 211 of this example is provided at a position away from both the inner side surface fourth portion 274 and the inner side surface third portion 273 in the y direction. Also in this example, the reliability of the semiconductor light emitting device A18 can be improved.

  As shown in the semiconductor light emitting device A1 and the semiconductor light emitting devices A14 to A18 which are modifications thereof, the shape and position of the groove 211 (ventilation portion 6) viewed in the z direction are not particularly limited. These shapes, positions, and the like can be appropriately employed in the above-described and following modifications and embodiments.

[First Embodiment Ninth Modification]
FIG. 20 is an essential part enlarged plan view showing a ninth modified example of the semiconductor light emitting device according to the first embodiment of the present disclosure, and FIG. 21 is an essential part enlarged sectional view taken along line XXI-XXI in FIG. is there. In the semiconductor light emitting device A19 of this example, the support member first portion 2 has a recess 212. Although the groove part 211 of this example is a structure similar to the groove part 211 of semiconductor light-emitting device A1 mentioned above, you may employ | adopt any groove part 211 of the example mentioned above.

  The recess 212 is recessed from the first surface 21 and is adjacent to the groove 211. In addition, the illustrated recess 212 reaches the inner side second portion 272 and the fourth surface 24, but may reach only one of them, or may not reach either of them. . As shown in FIG. 21, the recess 212 of this example has an arc shape in cross section, but the shape and size are not particularly limited. In the illustrated example, the support member first portion 2 has a pair of recesses 212. The pair of recesses 212 are disposed on both sides in the y direction with the groove 211 therebetween.

  Also in this example, the reliability of the semiconductor light emitting device A19 can be improved. Further, as shown in FIG. 21, when fixing the cover 5 to the support member first part 2, an adhesive for forming a bonding layer 59 was applied between the first surface 21 and the second surface 52. In this case, the adhesive can spread by pressing. In this example, the adhesive that spreads toward the groove 211 can be retained in the recess 212. Therefore, the bonding layer 59 can be prevented from unintentionally overlapping the groove 211, and the ventilation portion 6 can be more reliably formed.

[First Embodiment Tenth Modification]
FIG. 22 is a plan view illustrating a tenth modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. The semiconductor light emitting device A1a of this example is different from the example described above in the position of the groove 211. In the present example, the groove portion 211 is connected to the inner side surface fourth portion 274 and the sixth surface 26. That is, the groove 211 is configured to vent in the y direction. The groove 211 is located on the other side in the x direction. The position of the groove 211 in the x direction overlaps with the second conducting member 3B.

  Also in this example, the reliability of the semiconductor light emitting device A1a can be improved. Further, it is possible to prevent an object that has entered unintentionally from the ventilation portion 6 from heading toward the VCSEL element 4.

[First Embodiment Eleventh Modification]
FIG. 23 is a plan view illustrating an eleventh modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. In the semiconductor light emitting device A1b of this example, the groove portion 211 is connected to the inner side surface fourth portion 274 and the sixth surface 26 similarly to the semiconductor light emitting device A1a. In this example, the x-direction positions of the first opening region S1 and the second opening region S2 are different. The first opening region S1 is located on the other side in the x direction (the fourth surface 24 side) than the second opening region S2. The groove 211 extends in a direction inclined with respect to the x direction when viewed in the z direction. The position in the x direction of the first opening region S1 (the range occupied in the x direction) overlaps with the position in the x direction of the second conducting member 3B. The x-direction position of the second opening region S2 overlaps with the x-direction position of the VCSEL element 4.

  Also in this example, the reliability of the semiconductor light emitting device A1b can be improved. In addition, it is possible to more reliably suppress an object that has unintentionally entered the ventilation portion 6 from moving toward the VCSEL element 4.

  Note that the groove 211 may be connected to the inner side third part 273 and the fifth surface 25 without being limited to the illustrated example.

[Second Embodiment]
FIG. 24 is an essential part enlarged cross-sectional view showing a semiconductor light emitting device according to the second embodiment of the present disclosure. In the semiconductor light emitting device A <b> 2 of this embodiment, a groove 511 is formed in the cover 5. The groove portion 511 is a portion that is recessed from the second surface 52 to the one side in the z direction and forms the ventilation portion 6 together with the first surface 21. That is, the groove 511 is connected to the accommodation space 7 and the outside of the semiconductor light emitting device A1.

  The shape, size, and position of the groove 511 in plan view may be the same as those of the groove 211 described above. In the illustrated example, the groove portion 511 has a first surface 5111 and a pair of second surfaces 5112. However, the cross-sectional shape of the groove portion 511 may be the same as the groove portion 211 of the above-described example. The first surface 5111 is a surface located at the deepest portion of the groove portion 511. The pair of second surfaces 5112 are connected to the second surface 52 and the first surface 5111, and are inclined with respect to the z direction, for example.

  Also according to the present embodiment, the reliability of the semiconductor light emitting device A2 can be improved. Further, as understood from the present embodiment, the specific configuration of the ventilation portion 6 that allows the accommodation space 7 to communicate with the outside is not limited.

[Second Embodiment First Modification]
FIG. 25 is an essential part enlarged cross-sectional view illustrating a first modification of the semiconductor light emitting device according to the second embodiment of the present disclosure. In the semiconductor light emitting device A21 of this example, the ventilation portion 6 is configured by the groove portion 211 of the support member first portion 2 and the groove portion 511 of the cover 5. Thus, as a specific structure constituting the ventilation portion 6, a structure in which concave groove-like portions such as the groove portion 211 and the groove portion 511 are appropriately combined may be employed.

[Third Embodiment]
26 to 32 illustrate a semiconductor light emitting device according to the third embodiment of the present disclosure. The semiconductor light emitting device A3 of this embodiment is different from the above-described embodiment in the configuration of the ventilation portion 6.

  In the present embodiment, the groove portion 211 and the groove portion 511 of the above-described embodiment are not formed in the support member first portion 2 and the cover 5. In the cover 5 of the present embodiment, the second surface 52 has a first region 521 and a second region 522.

  The first region 521 and the second region 522 are partitioned from each other when viewed in the z direction. In FIG. 26, the second region 522 is hatched for convenience of understanding. The first region 521 is a region where the bonding force with the bonding layer 59 is weaker than that of the second region 522. The first region 521 overlaps the first surface 21 of the support member first portion 2 as viewed in the z direction, and reaches the inner side surface 27 and the outside. In the illustrated example, the first region 521 reaches the inner surface second part 272 and the fourth surface 24. The first region 521 overlaps a part of the accommodation space 7 when viewed in the z direction.

  In this embodiment, as schematically shown in FIGS. 29 and 30, the first regions 521 and the second regions 522 have different surface roughness, so that the bonding force with the bonding layer 59 is different. Yes. For example, the surface roughness (Ra) of the first region 521 is about 0.01 μm to 0.1 μm, whereas the surface roughness (Ra) of the second region 522 is about 1.0 μm to 20 μm, Rougher than the first region 521. In addition, the thickness of the cover 5 is, for example, about 0.2 mm to 0.5 mm, and the thickness of the bonding layer 59 is, for example, about 15 μm to 40 μm. Examples of a method for forming the second region 522 include mechanical processing such as sand blasting and chemical processing using a chemical solution. In the first region 521 having a relatively smooth surface roughness, the bonding force of the bonding layer 59 is weaker than that in the second region 522. Alternatively, the first region 521 may be formed on a part of the second surface 52 by performing chemical treatment or mechanical treatment that reduces the bonding force with the bonding layer 59. As an example of such treatment, there is a chemical treatment in which a medicine such as a release agent is applied to a part of the second surface 52.

  In the present embodiment, the portion sandwiched between the first region 521 of the second surface 52 and the bonding layer 59 constitutes the ventilation portion 6. However, in the state where the semiconductor light emitting device A3 is normally transported, stored, and used, the cover 5 and the support member first portion 2 are joined by the joining layer 59 also in the first region 521, and the ventilation portion 6 is not a clear hole or the like that allows the storage space 7 to communicate with the outside.

  FIGS. 31 and 32 schematically show a state in which the internal pressure of the accommodation space 7 has increased in the mounting process of the semiconductor light emitting device A3 using, for example, a reflow furnace. When the internal pressure of the accommodation space 7 rises, a force that peels the cover 5 from the bonding layer 59 acts. Due to this force, local peeling occurs at the joining location of the first region 521 set as a location where the joining strength is relatively weak. Thereby, the ventilation | gas_flowing part 6 becomes a form of a clearance gap, and lets the accommodation space 7 and the exterior pass. 31 and 32 show a form in which the ventilation portion 6 is a clear gap for convenience of understanding, but the actual ventilation portion 6 may allow the gas in the accommodation space 7 to escape to the outside. That's fine. When the first region 521 and the bonding layer 59 are slightly separated, the gas in the accommodation space 7 can be guided to the outside. When the internal pressure of the accommodation space 7 is reduced by this ventilation, the first region 521 and the bonding layer 59 are brought into contact with each other again.

  Also according to such an embodiment, the reliability of the semiconductor light emitting device A3 can be improved. Moreover, the ventilation | gas_flowing part 6 using the 1st area | region 521 is a closed form in the state of normal use. For this reason, invasion of an unintended object such as moisture can be more reliably suppressed. In addition, after the ventilation described with reference to FIGS. 31 and 32 is realized, the ventilation portion 6 can be in a closed state again. Thereby, intrusion of the object which is not intended can be suppressed also in subsequent use etc.

[Fourth Embodiment]
FIG. 33 is a cross-sectional view illustrating a semiconductor light emitting device according to a fourth embodiment of the present disclosure. In the present embodiment, a hole 58 is formed in the cover 5. The hole 58 is connected to the first surface 51 and the second surface 52 and penetrates the cover 5 in the z direction. In the present embodiment, the ventilation portion 6 is constituted by the hole 58.

  Such an embodiment can also improve the reliability of the semiconductor light emitting device A4.

[Fifth Embodiment]
FIG. 34 is a cross-sectional view showing a semiconductor light emitting device according to the fifth embodiment of the present disclosure. The semiconductor light emitting device A5 of this embodiment is different from the above-described embodiment in the configuration of the support member 1.

  In the present embodiment, the support member 1 includes a support member first part 2, a base material 3C, and a conductive layer 3D. The base material 3C and the conductive layer 3D have a configuration that may be generally referred to as a wiring board.

  The base material 3C is a plate-like member made of an insulating material such as glass epoxy resin or ceramics. The base material 3C has a first surface 31C and a second surface 32C. The first surface 31C is a surface facing one side in the z direction. The second surface 32C is a surface facing the other side in the z direction.

  The conductive layer 3D is a layer made of metal plating such as Cu, Pd, or Au. The conductive layer 3D includes a first conductive part 31D, a second conductive part 32D, and a third conductive part 33D.

  The first conductive portion 31D is a portion formed on the first surface 31C of the base material 3C. In the illustrated example, the first conductive portion 31D includes a first portion 311D and a second portion 312D. The first part 311D and the second part 312D are separated from each other in the x direction. The VCSEL element 4 is mounted on the first part 311D. A first conductive bonding material 49 is bonded to the second part 312D and is electrically connected to the VCSEL element 4.

  The second conductive portion 32D is a portion formed on the second surface 32C of the base material 3C. In the illustrated example, the second conductive portion 32D includes a first portion 321D and a second portion 322D. The first part 321D and the second part 322D are separated from each other in the x direction. The first part 321D overlaps the first part 311D when viewed in the z direction, and the second part 322D overlaps the second part 312D when viewed in the z direction.

  The third conductive portion 33D is a portion that electrically connects the first conductive portion 31D and the second conductive portion 32D. In the illustrated example, the third conductive portion 33D includes a first portion 331D and a second portion 332D. The first part 331D is connected to the first part 311D of the first conductive part 31D and the first part 321D of the second conductive part 32D. The second part 332D is connected to the second part 312D of the first conductive part 31D and the second part 322D of the second conductive part 32D.

  The support member first portion 2 of the present embodiment is fixed to the first surface 31C of the base material 3C. The material and the like of the support member first part 2 are the same as, for example, the support member first part 2 of the above-described embodiment. In the illustrated example, the ventilation portion 6 is configured by forming the groove portion 211 in the support member first portion 2, but this is one configuration example of the ventilation portion 6, and the ventilation portion of the above-described embodiment. The part 6 can be adopted as appropriate.

  Also according to this embodiment, the reliability of the semiconductor light emitting device A5 can be improved. Further, as understood from the present embodiment, the specific configuration of the support member 1 is not particularly limited, and various configurations can be employed.

[Sixth Embodiment]
FIG. 35 is a cross-sectional view showing a semiconductor light emitting device according to a sixth embodiment of the present disclosure. The semiconductor light emitting device A6 of this embodiment is different from the above-described embodiment in the position where the ventilation portion 6 is provided. In the present embodiment, the ventilation portion 6 (groove portion 211) communicates with the accommodation space 7 from one side in the x direction. In the illustrated example, the groove 211 reaches the inner surface first portion 271 and the third surface 23.

  Also according to this embodiment, the reliability of the semiconductor light emitting device A6 can be improved. However, from the viewpoint of suppressing the defect of the VCSEL element 4 due to the intrusion of an unintended object while exhibiting the effect of suppressing the increase in the internal pressure by the ventilation part 6, the ventilation part 6 is from the other side in the x direction as in the above-described embodiment. A configuration leading to the accommodation space 7 is preferable.

  The semiconductor light emitting device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor light emitting device according to the present disclosure can be varied in design in various ways.

[Appendix 1]
A support member;
A translucent cover;
A VCSEL element housed in a housing space defined by the support member and the cover and emitting light to one side in the first direction through the cover, and a semiconductor light emitting device comprising:
A semiconductor light-emitting device comprising a ventilation portion that allows the accommodation space to communicate with the outside.
[Appendix 2]
2. The semiconductor light emitting device according to claim 1, wherein the support member is made of resin and includes a support member first portion having an inner surface surrounding the VCSEL element in the first direction view and a first surface facing one side in the first direction. apparatus.
[Appendix 3]
The support member first part has a groove part that is recessed from the first surface and reaches the inner side surface and the outside,
The semiconductor light emitting device according to appendix 2, wherein the ventilation portion is configured by the groove portion and the cover.
[Appendix 4]
The semiconductor light emitting device according to appendix 3, wherein the first support member has a recess that is recessed from the first surface and adjacent to the groove.
[Appendix 5]
The semiconductor light-emitting device according to appendix 4, wherein the first support member portion includes a pair of concave portions arranged so as to sandwich the groove portion.
[Appendix 6]
The support member includes a first conducting member located on one side in the second direction perpendicular to the first direction and a second conducting member located on the other side in the second direction,
The VCSEL element is mounted on the first conductive member,
The semiconductor light emitting device according to any one of appendices 3 to 5, wherein the second conducting member is conducted to the VCSEL element.
[Appendix 7]
The semiconductor light emitting device according to appendix 6, wherein the groove portion reaches the inner surface on the other side in the second direction.
[Appendix 8]
The semiconductor light emitting device according to appendix 7, wherein the groove portion is inclined with respect to the second direction when viewed in the first direction.
[Appendix 9]
The semiconductor light emitting device according to appendix 7, wherein the groove portion is along the second direction when viewed in the first direction.
[Appendix 10]
The groove portion includes a first portion extending from the inner surface in the second direction, a second portion connected to the first portion and extending in a direction intersecting the second direction, and the second portion and the second direction. The semiconductor light-emitting device according to appendix 7, which has a third portion extending to
[Appendix 11]
The semiconductor light-emitting device according to any one of appendices 7 to 10, wherein a first opening region where the groove portion opens on the inner side surface in the first direction view is smaller than a second opening region where the groove portion opens to the outside.
[Appendix 12]
11. The semiconductor light emitting device according to any one of appendices 7 to 10, wherein a first opening region where the groove portion opens into the accommodation space when viewed in the first direction is larger than a second opening region where the groove portion opens to the outside.
[Appendix 13]
The semiconductor according to any one of appendices 7 to 10, wherein the first opening region in which the groove portion opens into the accommodation space when viewed in the first direction is the same size as the second opening region in which the groove portion opens to the outside. Light emitting device.
[Appendix 14]
14. The semiconductor light emitting device according to any one of appendices 11 to 13, wherein the first opening region does not overlap the VCSEL element when viewed in the second direction.
[Appendix 15]
The semiconductor light emitting device according to appendix 6, wherein the groove portion communicates with the accommodation space from a third direction that is perpendicular to the first direction and the second direction.
[Appendix 16]
The first opening region in which the groove portion opens on the inner surface overlaps the VCSEL element at a position in the second direction,
The semiconductor light emitting device according to appendix 15, wherein the second opening region where the groove portion opens to the outside overlaps the second conducting member at a position in the second direction.
[Appendix 17]
The cover has a second surface facing the first surface of the support member first portion and a groove portion recessed from the second surface,
4. The semiconductor light emitting device according to appendix 3, wherein the ventilation portion is configured by the groove portion of the cover and the first support member portion.
[Appendix 18]
The cover has a second surface facing the first surface of the support member first part,
A bonding layer for bonding the first surface of the support member and the second surface of the cover;
The second surface has a first region and a second region partitioned from each other in the first direction view,
The first region has a weaker bonding force with the bonding layer than the second region and overlaps the first surface of the support member first part in the first direction view,
4. The semiconductor light emitting device according to appendix 3, wherein a gap generated between the first region of the cover and the bonding layer constitutes the ventilation portion.

A1, A11, A12, A13, A14, A15, A16, A17, A18, A19, A1a, A1b, A2, A21, A3, A4, A5: Semiconductor light emitting device 1: Support member 2: Support member first part 3A: 1st conduction member 3B: 2nd conduction member 3C: Base material 3D: Conductive layer 4: VCSEL element 5: Cover 6: Ventilation part 7: Accommodating space 21: 1st surface 22: 2nd surface 23: 3rd surface 24: 4th surface 25: 5th surface 26: 6th surface 27: Inner surface 28: 8th surface 31A, 31B, 31C: 1st surface 31D: 1st electroconductive part 32A, 32B, 32C: 2nd surface 32D: 2nd Conductive portion 33D: third conductive portion 41: first electrode 42: second electrode 49: first conductive bonding material 51: first surface 52: second surface 53: third surface 54: fourth surface 55: fifth surface 56: Sixth surface 58: Hole 59: Bonding layer 211: Groove portion 21 a: first part 211b: second part 211c: third part 212: recessed part 271: inner side first part 272: inner side second part 273: inner side third part 274: inner side fourth part 301A, 301B: First part 302A, 302B: second part 303A, 303B: third part 304A, 304B: fourth part 305A, 305B: fifth part 306A, 306B: sixth part 307A, 307B: seventh part 308A, 308B: first 8 part 311D, 321D, 331D: first part 312D, 322D, 332D: second part 451: second substrate 452: fourth semiconductor layer 453: active layer 454: fifth semiconductor layer 455: current confinement layer 456: insulating layer 457: conductive layer 460: light emitting region 511: groove 521: first region 522: second region 2111: first surface 2112: second surface 2113: third surface 2114: first 4 surface 2115: 5th surface 2116: 6th surface 4551, 4561, 4571: opening 5111: 1st surface 5112: 2nd surface CL1, CL2: centerline S1: 1st opening area | region S2: 2nd opening area | region

Claims (18)

A support member;
A translucent cover;
A VCSEL element housed in a housing space defined by the support member and the cover and emitting light to one side in the first direction through the cover, and a semiconductor light emitting device comprising:
A semiconductor light-emitting device comprising a ventilation portion that allows the accommodation space to communicate with the outside.   2. The semiconductor according to claim 1, wherein the support member is made of resin, and includes a support member first portion having an inner surface surrounding the VCSEL element in the first direction view and a first surface facing the one side in the first direction. Light emitting device. The support member first part has a groove part that is recessed from the first surface and reaches the inner side surface and the outside,
The semiconductor light emitting device according to claim 2, wherein the ventilation portion is configured by the groove portion and the cover.   The semiconductor light emitting device according to claim 3, wherein the first support member has a recess that is recessed from the first surface and adjacent to the groove.   5. The semiconductor light emitting device according to claim 4, wherein the first support member portion includes a pair of the concave portions arranged so as to sandwich the groove portion. The support member includes a first conducting member located on one side in the second direction perpendicular to the first direction and a second conducting member located on the other side in the second direction,
The VCSEL element is mounted on the first conductive member,
The semiconductor light-emitting device according to claim 3, wherein the second conducting member is conducted to the VCSEL element.   The semiconductor light emitting device according to claim 6, wherein the groove portion reaches the inner surface on the other side in the second direction.   The semiconductor light emitting device according to claim 7, wherein the groove portion is inclined with respect to the second direction when viewed in the first direction.   The semiconductor light emitting device according to claim 7, wherein the groove portion is along the second direction when viewed in the first direction.   The groove portion includes a first portion extending from the inner surface in the second direction, a second portion connected to the first portion and extending in a direction intersecting the second direction, and the second portion and the second direction. The semiconductor light-emitting device according to claim 7, further comprising a third portion extending in the direction.   11. The semiconductor light emitting device according to claim 7, wherein a first opening region in which the groove portion opens on the inner side surface in the first direction view is smaller than a second opening region in which the groove portion opens to the outside. .   11. The semiconductor light emitting device according to claim 7, wherein a first opening region in which the groove portion opens into the accommodation space in the first direction view is larger than a second opening region in which the groove portion opens to the outside. .   The first opening region where the groove portion opens into the accommodation space when viewed in the first direction is the same size as the second opening region where the groove portion opens to the outside. Semiconductor light emitting device.   The semiconductor light emitting device according to claim 11, wherein the first opening region does not overlap the VCSEL element when viewed in the second direction.   The semiconductor light emitting device according to claim 6, wherein the groove portion communicates with the housing space from a third direction that is perpendicular to the first direction and the second direction. The first opening region in which the groove portion opens on the inner surface overlaps the VCSEL element at a position in the second direction,
The semiconductor light emitting device according to claim 15, wherein the second opening region where the groove portion opens to the outside overlaps the second conducting member at a position in the second direction. The cover has a second surface facing the first surface of the support member first portion and a groove portion recessed from the second surface,
The semiconductor light emitting device according to claim 3, wherein the ventilation portion is configured by the groove portion of the cover and the first portion of the support member. The cover has a second surface facing the first surface of the support member first part,
A bonding layer for bonding the first surface of the support member and the second surface of the cover;
The second surface has a first region and a second region partitioned from each other in the first direction view,
The first region has a weaker bonding force with the bonding layer than the second region and overlaps the first surface of the support member first part in the first direction view,
The semiconductor light emitting device according to claim 3, wherein a gap formed between the first region of the cover and the bonding layer constitutes the ventilation portion.

Images