JP2021028919A - Semiconductor laser device - Google Patents

Abstract

To provide a semiconductor laser device capable of protecting a plurality of light emitting regions of a semiconductor laser element from external force and the like.SOLUTION: A semiconductor laser device includes: a semiconductor laser element 30 formed by stacking a first semiconductor layer, an active layer, and a second semiconductor layer in that order in a thickness direction z, and having a plurality of light emitting regions 30A that are projections formed to be separated from each other in a thickness direction z view partly including the active layer and the second semiconductor layer; a first terminal 11 conducted to the first semiconductor layer; a second terminal 12 conducted to the second semiconductor layer; a first translucent member 51 having electrical insulation properties, supported by the semiconductor laser element 30, and overlapping the plurality of light emitting regions 30A in the thickness direction z view; and a second translucent member 52 having electrical insulation properties and including a region located at a side opposite to the plurality of light emitting regions 30A so as to sandwich the first translucent member 51. Young's modulus of the first translucent member 51 is lower than Young's modulus of the second translucent member 52.SELECTED DRAWING: Figure 4

Description

The present invention relates to a semiconductor laser device.

As one of the semiconductor laser devices, a surface emitting semiconductor laser device (VCSEL) is known. Patent Document 1 discloses an example of a surface emitting semiconductor laser device. The surface emitting semiconductor laser device of the present disclosure has a plurality of light emitting regions arranged on a substrate. Laser light is emitted from each light emitting region. Each light emitting region has a mesa structure protruding in the thickness direction of the substrate. Since the mesa structure is formed by laminating a plurality of semiconductor layers in the thickness direction of the substrate, it has a characteristic of being relatively vulnerable to an external force.

JP-A-2017-147461

In view of the above circumstances, it is an object of the present invention to provide a semiconductor laser device capable of protecting a plurality of light emitting regions of a semiconductor laser element from external forces and the like.

According to the present invention, the first semiconductor layer, the active layer, and the second semiconductor layer are laminated in this order in the thickness direction, and the active layer is a protrusion formed so as to be separated from each other in the thickness direction. A semiconductor laser device having a plurality of light emitting regions including the second semiconductor layer, a first terminal conducting the first semiconductor layer, and a second terminal conducting the second semiconductor layer are electrically insulated. A first translucent member which is supported by the semiconductor laser element and overlaps a plurality of the light emitting regions in the thickness direction, and which has electrical insulation and sandwiches the first transmissive member. A second translucent member having a region located on the side opposite to the light emitting region is provided, and the young rate of the first transmissive member is lower than the young rate of the second transmissive member. A semiconductor laser device characterized by the above is provided.

In the practice of the present invention, the semiconductor laser device preferably has a first electrode conducting the first semiconductor layer and a second electrode conducting the second semiconductor layer and covering the plurality of light emitting regions. The first translucent member is in contact with the second electrode.

In the practice of the present invention, the second translucent member is preferably in contact with the first translucent member.

In the practice of the present invention, the constituent material of the first translucent member is preferably silicone.

Preferably, in the practice of the present invention, the first electrode is further provided with a wire that is electrically bonded to the first terminal and connects the second electrode and the second terminal.

In the practice of the present invention, the wire preferably has a first bonding portion connected to the second terminal and a second bonding portion connected to the second electrode.

In the practice of the present invention, preferably, the second electrode has a bump portion formed so as to project toward the side away from the semiconductor laser element in the thickness direction, and the second bonding portion is connected to the bump portion. Has been done.

In the practice of the present invention, the second translucent member preferably covers the wire and a part of each of the first terminal and the second terminal.

In the practice of the present invention, the first translucent member preferably covers the second bonding portion.

In the practice of the present invention, preferably, the semiconductor laser device has an element side surface facing in a direction orthogonal to the thickness direction, and the first translucent member covers the element side surface.

In the practice of the present invention, preferably, the first terminal and the second terminal are made of a metal lead frame, the first terminal faces the thickness direction, and the first electrode is electrically connected. It has a first connection surface to be connected and a first mounting surface facing the side opposite to the first connection surface, and the second terminal has a side facing the first connection surface in the thickness direction. The first terminal and the second terminal are oriented and have a second connection surface to which the first bonding portion is connected and a second mounting surface facing the side opposite to the second connection surface. Supported by the second translucent member, the first mounting surface and the second mounting surface are exposed from the second translucent member.

In carrying out the present invention, preferably, an insulating substrate having a main surface and a back surface facing each other in the thickness direction is further provided, the first terminal is arranged on the main surface, and the first electrode is electrically operated. The first connecting portion, the first mounting portion arranged on the back surface thereof, the insulating substrate penetrating the insulating substrate in the thickness direction, and the first connecting portion and the first mounting portion are connected to each other. It has a first penetrating portion to be connected, and the second terminal is arranged on the main surface and is arranged on the back surface of the second connecting portion to which the first bonding portion is electrically connected. It has a second mounting portion and a second penetrating portion that penetrates the insulating substrate in the thickness direction and connects the second connecting portion and the second mounting portion to each other, and has the second light transmitting portion. The members are arranged in contact with the main surface.

In the practice of the present invention, it is preferably composed of a frame-shaped member having an opening that surrounds the semiconductor laser element and the wire in the thickness direction and penetrates in the thickness direction, and a diffractive optical element. Further, a third translucent member that closes the opening is further provided, and the second translucent member is formed corresponding to each of the light emitting regions, and the light emitted from each of the light emitting regions is emitted from the light emitting region. It has a plurality of lens portions that are close to being parallel to the thickness direction, and the second translucent member is joined to the second electrode via the first transmissive member.

In the practice of the present invention, the second bonding portion is preferably exposed from the first translucent member.

In the practice of the present invention, preferably, the first terminal and the second terminal are made of a metal lead frame, the first terminal faces the thickness direction, and the first electrode is electrically connected. It has a first connection surface to be connected and a first mounting surface facing the side opposite to the first connection surface, and the second terminal has a side facing the first connection surface in the thickness direction. The frame-shaped member has an electrical insulating property, having a second connecting surface facing and to which the first bonding portion is connected, and a second mounting surface facing the side opposite to the second connecting surface. The first terminal and the second terminal are supported by the frame-shaped member, and the first mounting surface and the second mounting surface are exposed from the frame-shaped member.

In the practice of the present invention, the frame-shaped member preferably has a pair of side portions separated in a direction orthogonal to the thickness direction, and a connecting portion connecting the pair of the side portions. The connecting portion is interposed between the first terminal and the second terminal.

In carrying out the present invention, preferably, an insulating substrate having a main surface and a back surface facing each other in the thickness direction is further provided, the first terminal is arranged on the main surface, and the first electrode is electrically operated. The first connecting portion, the first mounting portion arranged on the back surface thereof, the insulating substrate penetrating the insulating substrate in the thickness direction, and the first connecting portion and the first mounting portion are connected to each other. It has a first penetrating portion to be connected, and the second terminal is arranged on the main surface and is arranged on the back surface of the second connecting portion to which the first bonding portion is electrically connected. The frame-shaped member has a second mounting portion and a second penetrating portion that penetrates the insulating substrate in the thickness direction and connects the second connecting portion and the second mounting portion to each other. , Joined to the main surface.

According to the semiconductor laser device according to the present invention, it is possible to protect a plurality of light emitting regions of the semiconductor laser element from external forces and the like.

Other features and advantages of the present invention will become more apparent with the detailed description given below based on the accompanying drawings.

It is a top view (transmitting through the 2nd translucent member) of the semiconductor laser apparatus which concerns on 1st Embodiment of this invention. It is a bottom view of the semiconductor laser apparatus shown in FIG. It is a front view of the semiconductor laser apparatus shown in FIG. It is sectional drawing which follows the IV-IV line of FIG. It is sectional drawing which follows the VV line of FIG. It is a top view of the semiconductor laser element of the semiconductor laser apparatus shown in FIG. FIG. 6 is a cross-sectional view taken along the line VII-VII of FIG. It is a top view (transmitting through the 2nd translucent member) of the semiconductor laser apparatus which concerns on 1st modification of 1st Embodiment of this invention. It is sectional drawing which follows the IX-IX line of FIG. It is a top view (transmitting through the 2nd translucent member) of the semiconductor laser apparatus which concerns on 2nd modification of 1st Embodiment of this invention. It is sectional drawing of the semiconductor laser element which concerns on 3rd modification of 1st Embodiment of this invention. It is a top view (transmitting through the 2nd translucent member) of the semiconductor laser apparatus which concerns on 2nd Embodiment of this invention. It is a bottom view of the semiconductor laser apparatus shown in FIG. It is sectional drawing which follows the XIV-XIV line of FIG. It is a top view (transmitting through the 3rd translucent member) of the semiconductor laser apparatus which concerns on 3rd Embodiment of this invention. It is a bottom view of the semiconductor laser apparatus shown in FIG. FIG. 5 is a cross-sectional view taken along the line XVII-XVII of FIG. It is sectional drawing which follows the XVIII-XVIII line of FIG. It is a partially enlarged plan view of the semiconductor laser element of the semiconductor laser apparatus shown in FIG. FIG. 5 is a cross-sectional view taken along the line XX-XX of FIG. It is a top view (transmitting through the 3rd translucent member) of the semiconductor laser apparatus which concerns on 4th Embodiment of this invention. FIG. 2 is a cross-sectional view taken along the line XXII-XXII of FIG.

A mode for carrying out the present invention (hereinafter referred to as “the embodiment”) will be described with reference to the accompanying drawings.

[First Embodiment]
The semiconductor laser apparatus A10 according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 7. The semiconductor laser device A10 includes a first terminal 11, a second terminal 12, a semiconductor laser element 30, a wire 40, a first translucent member 51, and a second translucent member 52.

In FIG. 1, for convenience of understanding, the second translucent member 52 is transmitted. The second translucent member 52 transmitted in FIG. 1 is shown by an imaginary line (imaginary line). FIG. 7 illustrates the wire 40 and the first translucent member 51 in addition to the semiconductor laser element 30.

The semiconductor laser device A10 shown in FIGS. 1 to 7 is of a type that is surface-mounted on a wiring board of various electronic devices such as a smartphone. As shown in FIG. 1, the semiconductor laser device A10 has a rectangular shape in the thickness direction z-view (hereinafter referred to as “planar view”) of the semiconductor laser element 30. Here, for convenience of explanation, the direction in which the long side of the semiconductor laser device A10 extending perpendicular to the thickness direction z of the semiconductor laser element 30 (hereinafter abbreviated as "thickness direction z") extends is the "first direction x". Called. The direction in which the short side of the semiconductor laser apparatus A10, which is perpendicular to both the thickness direction z and the first direction x, extends is called the "second direction y".

As shown in FIGS. 4 and 5, the semiconductor laser element 30 is electrically bonded to the first terminal 11. The first terminal 11 is a conductive member that forms a part of the conductive path between the wiring board located outside and the semiconductor laser element 30. The first terminal 11 is the cathode of the semiconductor laser device A10. The first terminal 11 is composed of a metal lead frame made of Cu (copper) or the like. As shown in FIGS. 1 to 5, the first terminal 11 has a first connecting surface 11A, a first mounting surface 11B, a first side surface 11C, a first curved portion 11D, and a pair of protruding portions 11E.

As shown in FIGS. 3 to 5, the first connection surface 11A faces the side where the semiconductor laser element 30 is located in the thickness direction z. The semiconductor laser element 30 is electrically bonded to the first connection surface 11A. In the semiconductor laser apparatus A10, the first connection surface 11A is covered with an Ag (silver) plating layer. The plating layer is formed by electrolytic plating.

As shown in FIGS. 3 to 5, the first mounting surface 11B faces the side opposite to the first connecting surface 11A. The first mounting surface 11B is used when mounting the semiconductor laser device A10 on the wiring board. In the semiconductor laser apparatus A10, the first mounting surface 11B is covered with an alloy plating layer containing Sn (tin) as a main component. The plating layer is formed by electrolytic plating.

As shown in FIGS. 1 to 5, the first side surface 11C is connected to the first connection surface 11A and faces both the first direction x and the second direction y. The first side surface 11C has a pair of regions facing the first direction x and a pair of regions facing the second direction y.

As shown in FIGS. 1 to 5, the first curved portion 11D is recessed into the first terminal 11 from both the first mounting surface 11B and the first side surface 11C. The first curved portion 11D is formed along the first side surface 11C in a plan view. The first curved portion 11D has a curved surface. The first curved portion 11D is formed by half-etching the lead frame.

As shown in FIGS. 1 to 5 (excluding FIG. 4), the pair of projecting portions 11E project in the second direction y from the pair of regions of the first side surface 11C facing the second direction y. The pair of protrusions 11E are a part of a support member for supporting the first terminal 11 on the lead frame.

As shown in FIG. 1, the second terminal 12 is separated from the first terminal 11 in the first direction x. A wire 40 is connected to the second terminal 12. The second terminal 12, together with the wire 40, is a conductive member that forms a part of the conductive path between the wiring board located outside and the semiconductor laser element 30. The second terminal 12 is the anode of the semiconductor laser device A10. The second terminal 12 is composed of a metal lead frame made of Cu or the like. In the semiconductor laser apparatus A10, the first terminal 11 and the second terminal 12 are composed of the same lead frame. As shown in FIGS. 1 to 5, the second terminal 12 has a second connecting surface 12A, a second mounting surface 12B, a second side surface 12C, a second curved portion 12D, and a pair of protruding portions 12E.

As shown in FIGS. 3 to 5, the second connection surface 12A faces the side (the side where the semiconductor laser element 30 is located) of the first terminal 11 facing the first connection surface 11A in the thickness direction z. A wire 40 is connected to the second connection surface 12A. In the semiconductor laser apparatus A10, the second connection surface 12A is covered with an Ag plating layer. The plating layer is formed by electrolytic plating.

As shown in FIGS. 3 to 5, the second mounting surface 12B faces the side opposite to the second connecting surface 12A. The second mounting surface 12B is used when mounting the semiconductor laser device A10 on the wiring board. In the semiconductor laser apparatus A10, the second mounting surface 12B is covered with an alloy plating layer containing Sn as a main component. The plating layer is formed by electrolytic plating.

As shown in FIGS. 1 to 5, the second side surface 12C is connected to the second connecting surface 12A and faces both the first direction x and the second direction y. The second side surface 12C has a pair of regions facing the first direction x and a pair of regions facing the second direction y.

As shown in FIGS. 1 to 5, the second curved portion 12D is recessed inside the second terminal 12 from both the second mounting surface 12B and the second side surface 12C. The second curved portion 12D is formed along the second side surface 12C in a plan view. The second curved portion 12D has a curved surface. The second curved portion 12D is formed by half-etching the lead frame.

As shown in FIGS. 1 to 5 (excluding FIG. 4), the pair of projecting portions 12E project in the second direction y from the pair of regions of the second side surface 12C facing the second direction y. The pair of protrusions 12E are a part of a support member for supporting the second terminal 12 on the lead frame.

The semiconductor laser element 30 is a semiconductor element that emits laser light to the side of the first terminal 11 facing the first connection surface 11A in the thickness direction z. The semiconductor laser device 30 emits infrared rays (infrared: IR) having a wavelength of 800 nm or more. The semiconductor laser element 30 is a VCSEL (Vertical Cavity Surface Emitting Laser). As shown in FIGS. 1 and 4, in the semiconductor laser device A10, the semiconductor laser element 30 is electrically joined to the first terminal 11 so that its long side in a plan view is along the first direction x. As shown in FIGS. 6 and 7, the semiconductor laser device 30 has a plurality of light emitting regions 30A, a device side surface 30B, a first electrode 31 and a second electrode 32.

As shown in FIGS. 6 and 7, the plurality of light emitting regions 30A are convex (mesa-shaped) formed so as to be separated from each other in a plan view. The plurality of light emitting regions 30A project to the side facing the first connection surface 11A of the first terminal 11 in the thickness direction z. Laser light is emitted from each light emitting region 30A. The plurality of light emitting regions 30A are covered with the second electrode 32. The second electrode 32 has a plurality of outlets 321 penetrating in the thickness direction z and corresponding to each light emitting region 30A. The laser light is emitted from each light emitting region 30A through the exit port 321.

As shown in FIGS. 4 to 6, the element side surface 30B faces a direction orthogonal to the thickness direction z, that is, the first direction x and the second direction y. The element side surface 30B has a pair of regions facing the first direction x and a pair of regions facing the second direction y.

As shown in FIG. 7, the semiconductor laser element 30 is laminated in the order of the first semiconductor layer 302, the active layer 303, and the second semiconductor layer 304 on the semiconductor substrate 301 in the thickness direction z. The surface of the second semiconductor layer 304 is covered with the insulating layer 305. A current constriction layer 306 is arranged inside the second semiconductor layer 304. The components of the plurality of light emitting regions 30A include an active layer 303, a second semiconductor layer 304, an insulating layer 305, and a current constriction layer 306.

The semiconductor substrate 301 is made of an n-type semiconductor. The main component of the semiconductor substrate 301 is a compound semiconductor such as GaAs (gallium arsenide). As shown in FIG. 7, the first semiconductor layer 302 is laminated on the upper surface of the semiconductor substrate 301. The first semiconductor layer 302 is made of an n-type semiconductor, and its constituent elements include an n-type DBR (Distributed Bragg Reflector) layer. The n-type DBR layer is an AlGaAs layer having a thickness of λp / 4 (λp: wavelength of light emitted from the active layer 303), which is a set of two layers having different refractive indexes. It is composed by letting.

The first electrode 31 is arranged on the lower surface of the semiconductor substrate 301. The first electrode 31 is the cathode of the semiconductor laser device 30. The first electrode 31 is, for example, a metal layer containing Au (gold) and is formed by vapor deposition. As shown in FIG. 7, the first electrode 31 is conductive to the first semiconductor layer 302 via the semiconductor substrate 301. Further, the first electrode 31 is electrically bonded to the first connection surface 11A of the first terminal 11 via the conductive bonding layer 39. Therefore, the first terminal 11 is conductive to the first semiconductor layer 302. The conductive bonding layer 39 is, for example, a synthetic resin containing silver (so-called Ag paste).

The active layer 303 is laminated on the first semiconductor layer 302. The active layer 303 is a compound semiconductor that emits light having a wavelength of λp by spontaneous emission and stimulated emission. The length of λp is 940 nm or 850 nm.

The second semiconductor layer 304 is laminated on the active layer 303. The second semiconductor layer 304 is made of a p-type semiconductor, and its constituent elements include a p-type DBR layer. The p-type DBR layer is an AlGaAs layer having a thickness of λp / 4 (λp: wavelength of light emitted from the active layer 303), which is a set of two layers having different refractive indexes. It is composed by letting. The light emitted from the active layer 303 resonates because it is reflected in the thickness direction by both the n-type DBR layer included in the first semiconductor layer 302 and the p-type DBR layer included in the second semiconductor layer 304. To do. The resonated light becomes the laser light.

The insulating layer 305 covers the surfaces of the first semiconductor layer 302 and the second semiconductor layer 304, respectively. The insulating layer 305 transmits light having a wavelength of 800 nm or more. The constituent material of the insulating layer 305 is, for example, SiO ₂ . As shown in FIG. 7, the insulating layer 305 has a plurality of openings 305A penetrating in the thickness direction z and corresponding to each light emitting region 30A. The second electrode 32 passes through each opening 305A.

The current constriction layer 306 is arranged inside the second semiconductor layer 304 and is located in the vicinity of the active layer 303 in the thickness direction z. The current constriction layer 306 is made of a material containing a large amount of Al (aluminum) and easily oxidized. The current constriction layer 306 is formed by oxidizing a part of the p-type DBR layer contained in the second semiconductor layer 304. The current constriction layer 306 can be formed by ion implantation. As shown in FIG. 7, the current constriction layer 306 has an opening 306A penetrating in the thickness direction z. The opening 306A overlaps the outlet 321 of the second electrode 32 in a plan view. The second semiconductor layer 304 passes through the opening 306A. As a result, a current flows through the opening 306A along the thickness direction z.

The second electrode 32 is arranged so as to cover the insulating layer 305. The second electrode 32 is the anode of the semiconductor laser device 30. The second electrode 32 is, for example, a metal layer containing Au, and is formed by vapor deposition. The insulating layer 305 is exposed from each outlet 321 of the second electrode 32 described above. The second electrode 32 conducts to the second semiconductor layer 304 through a plurality of openings 305A formed in the insulating layer 305. Further, the second electrode 32 has a bump portion 322 formed so as to project toward the side away from the semiconductor laser element 30 in the thickness direction z (the side facing the first connection surface 11A of the first terminal 11). The bump portion 322 is composed of a ball bonding portion obtained in the wire bonding step.

As shown in FIGS. 1 and 4, the wire 40 connects the second electrode 32 of the semiconductor laser element 30 and the second terminal 12. The wire 40, together with the second terminal 12, is a conductive member that forms a part of the conductive path between the wiring board located outside and the semiconductor laser element 30. The constituent material of the wire 40 is, for example, Au. The wire 40 is formed by wire bonding. The wire 40 has a first bonding portion 41 connected to the second terminal 12 and a second bonding portion 42 connected to the second electrode 32. The first bonding portion 41 is a ball bonding portion. In the semiconductor laser apparatus A10, the first bonding portion 41 is connected to the second connecting surface 12A of the second terminal 12. The second bonding portion 42 is a stitch bonding portion. As shown in FIG. 7, the second bonding portion 42 is connected to the bump portion 322 of the second electrode 32.

As shown in FIGS. 4, 5 and 7, the first translucent member 51 is supported by the semiconductor laser element 30 and overlaps the plurality of light emitting regions 30A of the semiconductor laser element 30 in a plan view. "Supported by the semiconductor laser element 30" means a configuration supported by the semiconductor laser element 30 by being in contact with the semiconductor laser element 30, and a configuration indirectly supported by the semiconductor laser element 30 via another member. including. In the semiconductor laser device A10, the first translucent member 51 is supported by the semiconductor laser element 30 by being in contact with the second electrode 32 of the semiconductor laser element 30. Further, in the configuration in which the semiconductor laser element 30 is indirectly supported via another member, a polyimide or the like covering the second electrode 32 can be mentioned as the other member. The first translucent member 51 has translucency and electrical insulation. The first translucent member 51 transmits light having a wavelength of 800 nm or more. The Young's modulus (elastic modulus) of the first translucent member 51 is lower than the Young's modulus of the second translucent member 52. The constituent material of the first translucent member 51 is silicone such as silicone gel. A polyimide having a Young's modulus similar to that of silicone may be applied to the constituent material of the first translucent member 51, but in this case, a plurality of polyimides corresponding to the outlets 321 of the second electrodes 32 are used. It is necessary to provide an opening in the polyimide by photolithography. On the other hand, when silicone is applied to the constituent material of the first translucent member 51, it is not necessary to provide the plurality of openings. Therefore, from the viewpoint of the manufacturing process of the semiconductor laser apparatus A10, silicone is preferable to polyimide as the constituent material of the first translucent member 51. In the semiconductor laser apparatus A10, the first translucent member 51 covers the bump portion 322 of the second electrode 32 and the second bonding portion 42 of the wire 40. Further, in the semiconductor laser device A10, the first translucent member 51 electrically joins the semiconductor laser element 30 to the first terminal 11 and connects the wire 40 to the second terminal 12 and the second electrode 32. Later, it is formed by quantitative application using a dispenser.

As shown in FIGS. 4 and 5, the second translucent member 52 has a region located on the side opposite to the plurality of light emitting regions 30A of the semiconductor laser element 30 with the first translucent member 51 interposed therebetween. The configuration of the region includes, in addition to the configuration in contact with the first translucent member 51, a configuration in which another member is interposed between the first translucent member 51 and the region. In the semiconductor laser apparatus A10, the region is in contact with the first translucent member 51. The second translucent member 52 has translucency and electrical insulation. The second translucent member 52 transmits light having a wavelength of 800 nm or more. The Young's modulus of the second translucent member 52 is higher than the Young's modulus of the first translucent member 51.

As shown in FIGS. 1 to 5, in the semiconductor laser apparatus A10, the second translucent member 52 covers the wire 40 and a part of each of the first terminal 11 and the second terminal 12. The constituent material of the second translucent member 52 is, for example, an epoxy resin or a silicone resin. In the semiconductor laser apparatus A10, the second translucent member 52 is formed by molding. Further, in the semiconductor laser apparatus A10, the first terminal 11 and the second terminal 12 are supported by the second translucent member 52. A part of the second translucent member 52 is located at the first curved portion 11D of the first terminal 11 and the second curved portion 12D of the second terminal 12, respectively. The second translucent member 52 has a top surface 52A, a bottom surface 52B, a pair of first side surfaces 52C, and a pair of second side surfaces 52D.

As shown in FIGS. 3 to 5, the top surface 52A faces the side facing the first connection surface 11A of the first terminal 11 in the thickness direction z. The peripheral edge of the top surface 52A coincides with the peripheral edge of the semiconductor laser device A10 in a plan view. The laser light emitted from the semiconductor laser element 30 is transmitted from the top surface 52A. Further, as shown in FIGS. 3 to 5, the bottom surface 52B faces the side opposite to the top surface 52A. As shown in FIG. 2, in the semiconductor laser apparatus A10, the first mounting surface 11B of the first terminal 11 and the second mounting surface 12B of the second terminal 12 are exposed from the bottom surface 52B.

As shown in FIGS. 1 to 4, the pair of first side surfaces 52C face the first direction x and are separated from each other in the first direction x. Both ends of the first side surface 52C in the thickness direction z are connected to the top surface 52A and the bottom surface 52B. Further, as shown in FIGS. 1 to 5 (excluding FIG. 4), the pair of second side surfaces 52D face the second direction y and are separated from each other in the second direction y. Both ends of the second side surface 52D in the thickness direction z are connected to the top surface 52A and the bottom surface 52B. Both ends of the second side surface 52D in the first direction x are connected to a pair of first side surfaces 52C. In the semiconductor laser apparatus A10, the protruding portion 11E of the first terminal 11 and the protruding portion 12E of the second terminal 12 are exposed from the second side surface 52D of each.

[First modification]
Next, the semiconductor laser device A11 according to the first modification of the first embodiment of the present invention will be described with reference to FIGS. 8 and 9. Note that FIG. 8 transmits the second translucent member 52 for convenience of understanding. The second translucent member 52 transmitted in FIG. 8 is shown by an imaginary line.

In the semiconductor laser apparatus A11, the configuration of the first translucent member 51 is different from that of the semiconductor laser apparatus A10 described above.

As shown in FIGS. 8 and 9, the first translucent member 51 covers the element side surface 30B of the semiconductor laser element 30. Therefore, in the semiconductor laser apparatus A11, the first translucent member 51 is configured to cover the entire semiconductor laser element 30. A first translucent member 51 is interposed between the semiconductor laser element 30 and the second translucent member 52.

[Second modification]
Next, the semiconductor laser apparatus A12 according to the second modification of the first embodiment of the present invention will be described with reference to FIG. Note that FIG. 10 transmits the second translucent member 52 for convenience of understanding. The second translucent member 52 transmitted in FIG. 10 is shown by an imaginary line.

In the semiconductor laser apparatus A12, the bonding form of the semiconductor laser element 30 is different from that of the semiconductor laser apparatus A10 described above.

As shown in FIG. 10, in the semiconductor laser device A10, the semiconductor laser element 30 is electrically joined to the first terminal 11 so that its short side in a plan view is along the first direction x.

[Third modification example]
Next, the semiconductor laser apparatus A13 according to the third modification of the first embodiment of the present invention will be described with reference to FIG. The cross-sectional position of FIG. 11 is the same as the cross-sectional position of FIG.

As shown in FIG. 11, in the semiconductor laser apparatus A13, the shape of the first translucent member 51 is not bulging in the thickness direction z as in the first translucent member 51 of the semiconductor laser apparatus A10, but is flat. It has become a thing. In the semiconductor laser device A13, the bump portion 322 of the second electrode 32 of the semiconductor laser element 30 and the second bonding portion 42 of the wire 40 are exposed from the first translucent member 51. The first translucent member 51 is formed on the semiconductor laser element 30 in the pre-process (wafer process) of the semiconductor laser device A13. The first translucent member 51 is formed by printing using a mask so as to be in contact with the second electrode 32. In the formation of the first translucent member 51, the first translucent member 51 does not cover the bump portion 322.

Next, the operation and effect of the semiconductor laser device A10 will be described.

According to the configuration of the semiconductor laser apparatus A10, the first translucent member 51 is interposed between the plurality of light emitting regions 30A of the semiconductor laser element 30 and the second translucent member 52 in the thickness direction z. The Young's modulus of the first translucent member 51 is lower than the Young's modulus of the second translucent member 52. As a result, when an external force or an internal force due to thermal expansion acts on the second light transmitting member 52, the stress transmitted to the first light transmitting member 51 becomes smaller than the stress transmitted to the second light transmitting member 52. Therefore, the stress transmitted to the plurality of light emitting regions 30A due to the external force acting on the second light transmitting member 52 is relaxed by the first light transmitting member 51. Therefore, according to the semiconductor laser device A10, it is possible to protect the plurality of light emitting regions 30A from external forces and the like.

Further, since the first translucent member 51 protects the plurality of light emitting regions 30A of the semiconductor laser element 30 from external forces and the like, the semiconductor laser element 30 can be covered with the second translucent member 52. This makes it possible to reduce the size of the semiconductor laser device A10 as compared with the case where, for example, a case having translucency is provided.

The constituent material of the first translucent member 51 is required to have a Young's modulus lower than that of the second translucent member 52, and to have electrical insulation and translucency. Further, since the plurality of light emitting regions 30A of the semiconductor laser element 30 generate heat, it is desirable that the constituent material of the first translucent member 51 is a material having excellent heat resistance. Therefore, silicone such as silicone gel is suitable as a constituent material of the first translucent member 51.

The wire 40 has a first bonding portion 41 and a second bonding portion 42. The first bonding portion 41 is connected to the second terminal 12. The second bonding portion 42 is connected to the second electrode 32 of the semiconductor laser element 30. As a result, when the wire 40 is formed by wire bonding, the thickness direction z of the wire 40 is shortened, so that the height of the semiconductor laser apparatus A10 can be reduced.

The second electrode 32 of the semiconductor laser element 30 has a bump portion 322 formed so as to project toward the side away from the semiconductor laser element 30 in the thickness direction z. The second bonding portion 42 of the wire 40 is connected to the bump portion 322. As a result, when the wire 40 is connected to the second electrode 32 by wire bonding, it is possible to prevent the second bonding portion 42 from coming into contact with the edge of the semiconductor laser element 30.

The first translucent member 51 covers the second bonding portion 42 of the wire 40. The region of the second electrode 32 to which the wire 40 is connected is arranged at a portion of the semiconductor laser element 30 formed in a protruding shape. Therefore, the first translucent member 51 can protect the portion from external force and the like.

Further, in the semiconductor laser device A11, the first translucent member 51 covers the element side surface 30B of the semiconductor laser element 30. As a result, the entire semiconductor laser element 30 can be protected from external forces and the like.

[Second Embodiment]
The semiconductor laser apparatus A20 according to the second embodiment of the present invention will be described with reference to FIGS. 12 to 14. In these figures, the same or similar elements as the above-mentioned semiconductor laser apparatus A10 are designated by the same reference numerals, and redundant description will be omitted. Note that FIG. 12 transmits the second translucent member 52 for convenience of understanding. The second translucent member 52 transmitted in FIG. 12 is shown by an imaginary line.

The semiconductor laser device A20 is different from the semiconductor laser device A10 described above in that the configuration of the first terminal 11, the second terminal 12, and the second translucent member 52 and the insulating substrate 20 are provided.

As shown in FIGS. 12 and 14, the insulating substrate 20 supports the first terminal 11 and the second terminal 12. The constituent material of the insulating substrate 20 is, for example, polychlorinated biphenyl (PCB) or glass epoxy resin. The insulating substrate 20 has a main surface 20A and a back surface 20B. The main surface 20A and the back surface 20B face opposite to each other in the thickness direction z. The main surface 20A faces the side where the semiconductor laser element 30 is located in the thickness direction z.

As shown in FIGS. 12 to 14, the first terminal 11 has a first connecting portion 111, a first mounting portion 112, a first penetrating portion 113, and a pair of first wiring portions 114. The first connecting portion 111, the first mounting portion 112, and the pair of first wiring portions 114 are all metal layers formed by electrolytic plating. For example, Cu, Ni (nickel) and Au are laminated on the metal layer. The constituent material of the first penetrating portion 113 is, for example, Cu. The first connection portion 111 is arranged on the main surface 20A of the insulating substrate 20, and the first electrode 31 of the semiconductor laser element 30 is electrically bonded via the conductive bonding layer 39. The first mounting unit 112 is arranged on the back surface 20B of the insulating substrate 20 and is used when the semiconductor laser device A20 is mounted on the wiring board. The first penetrating portion 113 penetrates the insulating substrate 20 in the thickness direction z, and connects the first connecting portion 111 and the first mounting portion 112 to each other. In the semiconductor laser apparatus A20, the first penetrating portion 113 is arranged at two places, but the number of places where the first penetrating portion 113 is arranged is not limited to this. The pair of first wiring portions 114 are arranged on the main surface 20A and extend from the first connection portion 111 in the second direction y. The pair of first wiring portions 114 are conductive paths for forming the first connection portion 111 and the first mounting portion 112 by electrolytic plating.

As shown in FIGS. 12 to 14, the second terminal 12 has a second connecting portion 121, a second mounting portion 122, a second penetrating portion 123, and a pair of second wiring portions 124. The second connecting portion 121, the second mounting portion 122, and the pair of second wiring portions 124 are all metal layers formed by electrolytic plating. For example, Cu, Ni and Au are laminated on the metal layer. The constituent material of the second penetrating portion 123 is, for example, Cu. The second connecting portion 121 is arranged on the main surface 20A of the insulating substrate 20, and the first bonding portion 41 of the wire 40 is connected to the second connecting portion 121. The second mounting portion 122 is arranged on the back surface 20B of the insulating substrate 20 and is used when mounting the semiconductor laser device A20 on the wiring board. The second penetrating portion 123 penetrates the insulating substrate 20 in the thickness direction z, and connects the second connecting portion 121 and the second mounting portion 122 to each other. In the semiconductor laser apparatus A20, the second penetrating portion 123 is arranged at one place, but the number of places where the second penetrating portion 123 is arranged is not limited to this. The pair of second wiring portions 124 are arranged on the main surface 20A and extend from the second connecting portion 121 in the second direction y. The pair of second wiring portions 124 are conductive paths for forming the second connecting portion 121 and the second mounting portion 122 by electrolytic plating.

As shown in FIG. 14, the second translucent member 52 is arranged in contact with the main surface 20A of the insulating substrate 20. Since the bottom surface 52B of the second translucent member 52 is in contact with the main surface 20A, the second translucent member 52 is supported by the insulating substrate 20. Further, the second translucent member 52 is a first connection portion 111, a pair of first wiring portions 114, and a second connection, which are portions of the first terminal 11 and the second terminal 12 arranged on the main surface 20A. It covers the portion 121 and the pair of second wiring portions 124.

Next, the operation and effect of the semiconductor laser device A20 will be described.

According to the configuration of the semiconductor laser device A20, as in the configuration of the semiconductor laser device A10 described above, the first light emitting region 30A of the semiconductor laser element 30 and the second translucent member 52 are located in the thickness direction z. A translucent member 51 is interposed. The Young's modulus of the first translucent member 51 is lower than the Young's modulus of the second translucent member 52. Therefore, the semiconductor laser device A20 can also protect the plurality of light emitting regions 30A from external forces and the like.

Further, since the first translucent member 51 protects the plurality of light emitting regions 30A of the semiconductor laser element 30 from external forces and the like, the semiconductor laser element 30 can be covered with the second translucent member 52. This makes it possible to reduce the size of the semiconductor laser device A20 as compared with the case where, for example, a case having translucency is provided.

Since the second translucent member 52 is arranged in contact with the first connecting surface 11A, in the semiconductor laser apparatus A20, the insulating substrate 20 supports the first terminal 11, the second terminal 12, and the second translucent member 52. doing. As a result, the structure of the semiconductor laser device A20 can be made more stable as compared with the structure of the semiconductor laser device A10 in which the second translucent member 52 supports the first terminal 11 and the second terminal 12.

[Third Embodiment]
The semiconductor laser apparatus A30 according to the third embodiment of the present invention will be described with reference to FIGS. 15 to 20. In these figures, the same or similar elements as the above-mentioned semiconductor laser apparatus A10 are designated by the same reference numerals, and redundant description will be omitted. Note that FIG. 15 transmits the third translucent member 53 (details will be described later) for convenience of understanding. FIG. 19 is a partial plan enlarged view of the semiconductor laser element 30, the first translucent member 51, and the second translucent member 52. FIG. 20 illustrates the wire 40 in addition to the semiconductor laser element 30, the first translucent member 51, and the second translucent member 52.

The semiconductor laser apparatus A30 is different from the semiconductor laser apparatus A10 described above in that the first translucent member 51 and the second translucent member 52 are provided, and the third translucent member 53 and the frame-shaped member 60 are provided.

As shown in FIGS. 17 to 19, the second translucent member 52 has a plurality of lens portions 521. In the semiconductor laser apparatus A30, the second translucent member 52 is a microlens array. The plurality of lens portions 521 are formed corresponding to the light emitting region 30A of each semiconductor laser element 30. Therefore, each lens unit 521 overlaps each light emitting region 30A in a plan view. Each lens portion 521 has a hexagonal shape in a plan view. The plurality of lens units 521 are lenses that are convex in the direction in which the light emitting region 30A protrudes. Further, in the semiconductor laser device A30, the bump portion 322 of the second electrode 32 of the semiconductor laser element 30 and the second bonding portion 42 of the wire 40 are exposed from the first translucent member 51.

As shown in FIG. 20, the second translucent member 52 is joined to the second electrode 32 that covers the plurality of light emitting regions 30A of the semiconductor laser element 30 via the first translucent member 51. The laser light emitted from each light emitting region 30A passes through the first translucent member 51 and is incident on each lens portion 521 of the second translucent member 52. The laser beam incident on each lens unit 521 is brought closer to a state parallel to the thickness direction z. That is, the plurality of lens units 521 are collimating lenses that convert the incident light into collimated light having higher directivity. Laser light converted into collimated light is emitted from each lens unit 521. In FIG. 20, the height H of the light emitting region 30A (dimension in the thickness direction z) and the height h of the lens portion 521 (dimension in the thickness direction z) are shown.

The first translucent member 51 and the second translucent member 52 are formed on the semiconductor laser element 30 in the pre-process (wafer process) of manufacturing the semiconductor laser apparatus A30. First, the first translucent member 51 is printed so as to be in contact with the second electrode 32 of the semiconductor laser element 30 using a mask. At this time, the first translucent member 51 does not cover the bump portion 322 of the second electrode 32. Next, the second light-transmitting member 52 in the wafer state is joined to the first light-transmitting member 51. Finally, the semiconductor laser element 30 and the second translucent member 52 are cut into individual pieces by dicing to obtain the first translucent member 51 and the second translucent member 52 arranged in the semiconductor laser element 30. be able to.

As shown in FIGS. 15, 17, and 18, the frame-shaped member 60 surrounds the semiconductor laser element 30 and the wire 40. The constituent material of the frame-shaped member 60 is, for example, polyphenylene sulfide (PPS). The first terminal 11 and the second terminal 12 are supported by the frame-shaped member 60. The frame-shaped member 60 has a top surface 60A, a bottom surface 60B, an outer peripheral surface 60C, and an inner peripheral surface 60D.

As shown in FIGS. 17 and 18, the top surface 60A faces the side of the first terminal 11 facing the first connection surface 11A in the thickness direction z. The top surface 60A has a frame shape. As shown in FIGS. 16 to 18, the bottom surface 60B faces the side opposite to the top surface 60A. In the semiconductor laser apparatus A30, the first mounting surface 11B of the first terminal 11 and the second mounting surface 12B of the second terminal 12 are exposed from the bottom surface 60B. As shown in FIGS. 15 to 18, the outer peripheral surface 60C has four regions and faces the outside of the semiconductor laser apparatus A30 in the first direction x and the second direction y. Both ends of the outer peripheral surface 60C in the thickness direction z are connected to the top surface 60A and the bottom surface 60B. The outer peripheral surface 60C stands upright in the thickness direction z. As shown in FIGS. 15, 17, and 18, the inner peripheral surface 60D has four regions and faces the inside of the semiconductor laser apparatus A30 in the first direction x and the second direction y. The inner peripheral surface 60D faces the semiconductor laser device 30. One end of the inner peripheral surface 60D in the thickness direction z is connected to the top surface 60A. The inner peripheral surface 60D is inclined with respect to the thickness direction z, and the area formed by the peripheral edge of the inner peripheral surface 60D in the plan view is maximum at a position connected to the top surface 60A in the thickness direction z.

As shown in FIGS. 15, 17, and 18, the frame-shaped member 60 has an opening 61, a pair of first side portions 621, and a pair of second side portions 622. In the semiconductor laser apparatus A30, the frame-shaped member 60 further includes a connecting portion 63 in addition to these. The opening 61 penetrates in the thickness direction z and has a rectangular outer edge in a plan view. The opening 61 is a hollow region surrounded by the inner peripheral surface 60D of the frame-shaped member 60. The cross-sectional area of the opening 61 with respect to the thickness direction z becomes maximum at a position flush with the top surface 60A of the frame-shaped member 60, and the cross-sectional area gradually decreases as it approaches the semiconductor laser device 30.

As shown in FIG. 17, the pair of first side portions 621 extend in the second direction y and are separated from each other in the first direction x. As shown in FIG. 18, the pair of second side portions 622 extend in the first direction x and are separated from each other in the second direction y. The "pair of side portions" described in the claims of the present invention corresponds to a pair of second side portions 622. The pair of first side portions 621 and the pair of second side portions 622 surround the semiconductor laser element 30 and the wire 40 in a plan view, and support the first terminal 11 and the second terminal 12. As shown in FIGS. 15 and 17, the connecting portion 63 connects a pair of second side portions 622. The connecting portion 63 is interposed between the first terminal 11 and the second terminal 12 in the first direction x.

As shown in FIGS. 17 and 18, the third light transmitting member 53 closes the opening 61 of the frame-shaped member 60. The third light transmitting member 53 has a flat plate shape and is composed of a diffractive optical element (DOE). The collimated light emitted from each lens portion 521 of the second translucent member 52 is incident on the third translucent member 53. The third translucent member 53 converts the incident light into dot light of about 15,000 to 30,000 and emits it. The projection position of each dot light can be freely set. As a result, the laser light emitted from the light emitting region 30A of each semiconductor laser element 30 can be aggregated into one projected dot light.

As shown in FIGS. 17 and 18, the third translucent member 53 has a front surface 53A and a back surface 53B. The surface 53A faces the side of the first terminal 11 facing the first connection surface 11A in the thickness direction z. The back surface 53B faces the opposite side of the front surface 53A. The back surface 53B is joined to the top surface 60A of the frame-shaped member 60 via an adhesive (not shown). The collimated light emitted from the second translucent member 52 enters the back surface 53B and is converted into dot light by the third translucent member 53. A plurality of dot lights are emitted from the surface 53A.

Next, the operation and effect of the semiconductor laser device A30 will be described.

According to the configuration of the semiconductor laser device A30, as in the configuration of the semiconductor laser device A10 described above, the first light emitting region 30A of the semiconductor laser element 30 and the second translucent member 52 are located in the thickness direction z. A translucent member 51 is interposed. The Young's modulus of the first translucent member 51 is lower than the Young's modulus of the second translucent member 52. Therefore, the semiconductor laser device A30 can also protect the plurality of light emitting regions 30A from external forces and the like.

Further, in order for the first translucent member 51 to protect the plurality of light emitting regions 30A of the semiconductor laser element 30 from external forces and the like, a plurality of second translucent members 52, which are microlens arrays, are provided via the first transmissive member 51. It can be bonded to the second electrode 32 that covers the light emitting region 30A of the above.

The semiconductor laser apparatus A30 includes a second translucent member 52 that converts laser light into collimated light, a third translucent member 53 composed of a diffractive optical element, and a frame-shaped member 60. As a result, a plurality of dot lights whose projection positions can be freely set can be emitted from the semiconductor laser device A30. Further, since the semiconductor laser element 30 has a plurality of light emitting regions 30A, the output of each dot light can be improved.

The frame-shaped member 60 has a connecting portion 63 that connects a pair of second side portions 622. The connecting portion 63 is located between the first terminal 11 and the second terminal 12 in the first direction x. As a result, the rigidity of the frame-shaped member 60 can be improved while ensuring mutual electrical insulation between the first terminal 11 and the second terminal 12.

[Fourth Embodiment]
The semiconductor laser apparatus A40 according to the fourth embodiment of the present invention will be described with reference to FIGS. 21 and 22. In these figures, the same or similar elements as the above-mentioned semiconductor laser apparatus A10 are designated by the same reference numerals, and redundant description will be omitted. Note that FIG. 21 transmits the third translucent member 53 for convenience of understanding.

The semiconductor laser device A40 includes a configuration of a first terminal 11, a second terminal 12, a first translucent member 51 and a second translucent member 52, and an insulating substrate 20, a third translucent member 53 and a frame-shaped member 60. The point is different from the above-mentioned semiconductor laser apparatus A10. Of these components, the first terminal 11, the second terminal 12, and the insulating substrate 20 have the same configuration as the semiconductor laser device A20 described above, and thus the description thereof will be omitted here. Further, since the configurations of the first translucent member 51, the second translucent member 52, and the third translucent member 53 are the same as the configurations of the semiconductor laser apparatus A30 described above, the description thereof is omitted here. Therefore, here, the configuration of the frame-shaped member 60 will be described.

As shown in FIGS. 21 and 22, the frame-shaped member 60 is joined to the main surface 20A of the insulating substrate 20 via the bonding layer 69. Since the bottom surface 60B of the frame-shaped member 60 is joined to the main surface 20A via the joining layer 69, the frame-shaped member 60 is supported by the insulating substrate 20. Therefore, in the semiconductor laser apparatus A40, the insulating substrate 20 is configured to support the first terminal 11, the second terminal 12, and the frame-shaped member 60. The bottom surface 60B has the same shape as the top surface 60A of the frame-shaped member 60. Further, the bonding layer 69 is formed according to the shape of the bottom surface 60B. The bonding layer 69 is, for example, an adhesive solder resist film. The inner peripheral surface 60D of the frame-shaped member 60 stands upright in the thickness direction z, like the outer peripheral surface 60C. In the semiconductor laser apparatus A40, the frame-shaped member 60 does not have a connecting portion 63.

Next, the operation and effect of the semiconductor laser device A40 will be described.

According to the configuration of the semiconductor laser device A40, as in the configuration of the semiconductor laser device A10 described above, the first light emitting region 30A of the semiconductor laser element 30 and the second translucent member 52 are located in the thickness direction z. A translucent member 51 is interposed. The Young's modulus of the first translucent member 51 is lower than the Young's modulus of the second translucent member 52. Therefore, the semiconductor laser device A40 can also protect the plurality of light emitting regions 30A from external forces and the like.

Further, in order for the first translucent member 51 to protect the plurality of light emitting regions 30A of the semiconductor laser element 30 from external forces and the like, the semiconductor laser device A40 has a plurality of dots from the third translucent member 53 like the semiconductor laser device A30. Light can be emitted. Further, since the semiconductor laser element 30 has a plurality of light emitting regions 30A, the output of dot light can be improved.

Since the frame-shaped member 60 is joined to the main surface 20A of the insulating substrate 20, in the semiconductor laser apparatus A40, the insulating substrate 20 supports the first terminal 11, the second terminal 12, and the frame-shaped member 60. As a result, the structure of the semiconductor laser device A40 can be made more stable as compared with the structure of the semiconductor laser device A30 in which the frame-shaped member 60 supports the first terminal 11 and the second terminal 12.

The present invention is not limited to the embodiments described above. The specific configuration of each part of the present invention can be freely redesigned.

A10, A11, A12, A13, A20, A30, A40: Semiconductor laser device 11: First terminal 11A: First connection surface 11B: First mounting surface 11C: First side surface 11D: First curved part 11E: Protruding part 111 : 1st connection part 112: 1st mounting part 113: 1st penetration part 114: 1st wiring part 12: 2nd terminal 12A: 2nd connection surface 12B: 2nd mounting surface 12C: 2nd side surface 12D: 2nd curved Part 12E: Protruding part 121: Second connecting part 122: Second mounting part 123: Second penetrating part 124: Second wiring part 20: Insulated substrate 20A: Main surface 20B: Back surface 30: Semiconductor laser element 30A: Light emitting region 30 : Element side surface 301: Semiconductor substrate 302: First semiconductor layer 303: Active layer 304: Second semiconductor layer 305: Insulation layer 305A: Opening 306: Current constriction layer 306A: Opening 31: First electrode 32: Second electrode 321 Exit 322: Bump portion 39: Conductive bonding layer 40: Wire 41: First bonding portion 42: Second bonding portion 51: First translucent member 52: Second translucent member 52A: Top surface 52B: Bottom surface 52C: First 1 side surface 52D: 2nd side surface 521: lens part 53: 3rd translucent member 53A: front surface 53B: back surface 60: frame-shaped member 60A: top surface 60B: bottom surface 60C: outer peripheral surface 60D: inner peripheral surface 61: opening 621 : 1st side part 622: 2nd side part 63: Connecting part 69: Joint layer H, h: Height z: Thickness direction x: 1st direction y: 2nd direction

Claims (17)

The first semiconductor layer, the active layer, and the second semiconductor layer are laminated in this order in the thickness direction, and the active layer and the second semiconductor layer are formed in a protruding shape separated from each other in the thickness direction. A semiconductor laser device having a plurality of light emitting regions including a part of
The first terminal conducting on the first semiconductor layer and
A second terminal conducting on the second semiconductor layer and
A first translucent member that has electrical insulation, is supported by the semiconductor laser element, and overlaps the plurality of light emitting regions in the thickness direction.
A second translucent member having electrical insulation and having a plurality of regions located on the opposite side of the light emitting region with the first transmissive member interposed therebetween.
A semiconductor laser apparatus, characterized in that the Young's modulus of the first translucent member is lower than the Young's modulus of the second translucent member. The semiconductor laser device has a first electrode conducting the first semiconductor layer and a second electrode conducting the second semiconductor layer and covering the plurality of light emitting regions.
The semiconductor laser device according to claim 1, wherein the first translucent member is in contact with the second electrode. The semiconductor laser device according to claim 2, wherein the second translucent member is in contact with the first translucent member. The semiconductor laser device according to claim 2 or 3, wherein the constituent material of the first translucent member is silicone. The first electrode is electrically bonded to the first terminal.
The semiconductor laser apparatus according to any one of claims 2 to 4, further comprising a wire connecting the second electrode and the second terminal. The semiconductor laser device according to claim 5, wherein the wire has a first bonding portion connected to the second terminal and a second bonding portion connected to the second electrode. The second electrode has a bump portion formed so as to project toward the side away from the semiconductor laser element in the thickness direction.
The semiconductor laser device according to claim 6, wherein the second bonding portion is connected to the bump portion. The semiconductor laser device according to claim 6 or 7, wherein the second translucent member covers the wire and a part of each of the first terminal and the second terminal. The semiconductor laser device according to claim 8, wherein the first translucent member covers the second bonding portion. The semiconductor laser device has an element side surface that faces a direction orthogonal to the thickness direction.
The semiconductor laser device according to claim 9, wherein the first translucent member covers the side surface of the device. The first terminal and the second terminal are composed of a metal lead frame.
The first terminal has a first connection surface that faces the thickness direction and is electrically connected to the first electrode, and a first mounting surface that faces the side opposite to the first connection surface. And
The second terminal faces the side facing the first connection surface in the thickness direction, and faces the second connection surface to which the first bonding portion is connected and the side opposite to the second connection surface. Has two mounting surfaces,
The first terminal and the second terminal are supported by the second translucent member.
The semiconductor laser device according to any one of claims 8 to 10, wherein the first mounting surface and the second mounting surface are exposed from the second translucent member. Further comprising an insulating substrate having a main surface and a back surface facing each other in the thickness direction.
The first terminal is insulated from a first connecting portion arranged on the main surface and electrically connected to the first electrode, a first mounting portion arranged on the back surface, and the thickness direction. It has a first penetrating portion that penetrates the substrate and connects the first connecting portion and the first mounting portion to each other.
The second terminal has a second connecting portion arranged on the main surface and to which the first bonding portion is electrically connected, a second mounting portion arranged on the back surface, and the thickness direction. It has a second penetrating portion that penetrates the insulating substrate and connects the second connecting portion and the second mounting portion to each other.
The semiconductor laser device according to any one of claims 8 to 10, wherein the second translucent member is arranged in contact with the main surface. A frame-shaped member that surrounds the semiconductor laser device and the wire in the thickness direction and has an opening that penetrates in the thickness direction.
A third translucent member which is composed of a diffractive optical element and closes the opening is further provided.
The second translucent member includes a plurality of lens portions that are formed corresponding to each of the light emitting regions and that bring the light emitted from each of the light emitting regions close to a state of being parallel to the thickness direction. Have and
The semiconductor laser apparatus according to claim 6 or 7, wherein the second translucent member is joined to the second electrode via the first translucent member. The semiconductor laser device according to claim 13, wherein the second bonding portion is exposed from the first translucent member. The first terminal and the second terminal are composed of a metal lead frame.
The first terminal has a first connection surface that faces the thickness direction and is electrically connected to the first electrode, and a first mounting surface that faces the side opposite to the first connection surface. And
The second terminal faces the side facing the first connection surface in the thickness direction, and faces the second connection surface to which the first bonding portion is connected and the side opposite to the second connection surface. Has two mounting surfaces,
The frame-shaped member has electrical insulation and has electrical insulation.
The first terminal and the second terminal are supported by the frame-shaped member.
The semiconductor laser device according to claim 14, wherein the first mounting surface and the second mounting surface are exposed from the frame-shaped member. The frame-shaped member has a pair of side portions separated in a direction orthogonal to the thickness direction, and a connecting portion for connecting the pair of the side portions.
The semiconductor laser device according to claim 15, wherein the connecting portion is interposed between the first terminal and the second terminal. Further comprising an insulating substrate having a main surface and a back surface facing each other in the thickness direction.
The first terminal is insulated from a first connecting portion arranged on the main surface and electrically connected to the first electrode, a first mounting portion arranged on the back surface, and the thickness direction. It has a first penetrating portion that penetrates the substrate and connects the first connecting portion and the first mounting portion to each other.
The second terminal has a second connecting portion arranged on the main surface and to which the first bonding portion is electrically connected, a second mounting portion arranged on the back surface, and the thickness direction. It has a second penetrating portion that penetrates the insulating substrate and connects the second connecting portion and the second mounting portion to each other.
The semiconductor laser device according to claim 14, wherein the frame-shaped member is joined to the main surface.

Images