JP6225834B2 - Semiconductor light emitting device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor light emitting device and a manufacturing method thereof.

  Conventionally, as a semiconductor light emitting device, for example, there is one described in Japanese Patent Application Laid-Open No. 2011-18800 (Patent Document 1). The semiconductor light emitting device includes a base body having a mounting surface and a heat radiating surface located on opposite sides, a semiconductor light emitting element attached to the base mounting surface side, and a cap attached to the base body so as to cover the semiconductor light emitting element. I was prepared.

  The semiconductor light emitting element is electrically connected to the lead portion, and one end of the lead portion is disposed inside the cap, and the other end of the lead portion is disposed outside the cap. The lead portion penetrated the base in the normal direction of the mounting surface, or the lead portion penetrated the side wall of the base.

JP 2011-18800 A

  In the conventional semiconductor light emitting device, when the lead portion protrudes in the vertical direction, the lead portion penetrates the heat radiation surface of the base. For this reason, heat is radiated only from the remaining part of the heat radiating surface of the base except the part through which the lead portion penetrates.

  Further, when the lead portion protrudes in the horizontal direction, when trying to arrange a plurality of semiconductor light emitting devices close to each other in the horizontal direction, in two adjacent semiconductor light emitting devices, an external lead of one semiconductor light emitting device is There is a risk of contact with the other semiconductor light emitting device. For this reason, a plurality of semiconductor light emitting devices cannot be arranged close to each other in the horizontal direction.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor light emitting device that can improve heat dissipation and alignment and a method for manufacturing the same.

In order to solve the above problems, a semiconductor light-emitting device of the present invention includes:
A base having a mounting surface and a heat dissipating surface located on the opposite side of the mounting surface;
A semiconductor light emitting element attached to the attachment surface side of the substrate;
An internal lead attached to the mounting surface side of the base and electrically connected to the semiconductor light emitting element;
A cap attached to the mounting surface of the base so as to cover the semiconductor light emitting element and the internal lead, and a through hole provided;
An external lead attached to the through hole of the cap, one end electrically connected to the internal lead inside the cap, and the other end arranged outside the cap;
The external lead is located in a region inside the outline of the base body as viewed from the normal direction of the mounting surface.

In addition, a method for manufacturing a semiconductor light emitting device of the present invention includes:
A base including a mounting surface and a heat dissipation surface located on opposite sides of each other, an internal lead attached to the mounting surface of the base, and attached to the mounting surface of the base and electrically connected to the internal lead A first component member preparing step of preparing a first component member having a semiconductor light emitting element formed;
A second component having a cap provided with a through-hole, and an external lead attached to the through-hole of the cap, having one end disposed inside the cap and the other end disposed outside the cap. A second component preparation step to prepare;
Cap covering step of covering the semiconductor light emitting element and the internal lead with the cap, and electrically connecting the external lead and the internal lead inside the cap;
A cap adhering step for adhering the cap and the mounting surface of the base;
In the cap coating step, the external lead is located in a region inside the outline of the base body when viewed from the normal direction of the mounting surface of the base body.

  According to the semiconductor light emitting device and the manufacturing method thereof of the present invention, heat dissipation and alignment can be improved.

It is sectional drawing which shows the semiconductor light-emitting device of 1st Embodiment of this invention. It is explanatory drawing explaining the manufacturing method of a semiconductor light-emitting device. It is an enlarged view of the A section of FIG. 2A. It is a rear view which shows a semiconductor light-emitting device array. It is a top view which shows the semiconductor light-emitting device of 2nd Embodiment of this invention. It is a front view which shows the semiconductor light-emitting device of 2nd Embodiment of this invention. It is a side view which shows the semiconductor light-emitting device of 2nd Embodiment of this invention. It is sectional drawing in the XX line of FIG. 4B. It is a top view which shows a semiconductor light-emitting device array. It is the figure seen from the side which shows a semiconductor light-emitting device array. It is sectional drawing which shows the semiconductor light-emitting device of 3rd Embodiment of this invention. It is sectional drawing which shows the semiconductor light-emitting device of 4th Embodiment of this invention.

  Hereinafter, each embodiment will be described in detail with reference to the drawings.

(First embodiment)
FIG. 1 is a cross-sectional view showing a semiconductor light emitting device 100 according to a first embodiment of the present invention.

  As shown in FIG. 1, the semiconductor light emitting device 100 includes a base body 30 having a mounting surface 30a and a heat radiation surface 30b located on the opposite side of the mounting surface 30a, and a semiconductor light emitting element 10 mounted on the mounting surface 30a side of the base body 30. And an internal lead 60 that is attached to the attachment surface 30a side of the base body 30 and is electrically connected to the semiconductor light emitting element 10, and is attached to the attachment surface 30a so as to cover the semiconductor light emitting element 10 and the internal lead 60, A cap 40 provided with 41b, and an external lead 50 attached to the through hole 41b of the cap 40, one end electrically connected to the internal lead 60 inside the cap 40 and the other end arranged outside the cap 40. And comprising. In particular, the external lead 50 is located in a region Z1 inside the outline 30c of the base body 30 when viewed from the normal direction of the mounting surface 30a. Note that the outline of the base 30 overlaps the outline of the cap 40, or the outline of the base 30 is outside the outline of the cap 40.

  In the semiconductor light emitting device 100, the external lead 50 does not penetrate the base body 30 but penetrates the cap 40. That is, the external lead 50 does not exist on the heat dissipation surface 30 b side of the base body 30. For this reason, compared with the case where an external lead exists in the heat radiating surface 30b side of the base body 30, the area of the heat radiating surface 30b of the base body 30 can be increased. Thereby, heat dissipation improves.

  Here, in the structure in which the entire lower surface of the substrate 30 is the heat radiating surface 30b, if the external leads protrude in the horizontal direction and are arranged outside the outline of the substrate, a plurality of semiconductor light emitting devices are brought close to each other in the horizontal direction. It becomes difficult to arrange. That is, in two adjacent semiconductor light emitting devices, the external lead of one semiconductor light emitting device comes into contact with the other semiconductor light emitting device, so that it is difficult to place them close to each other. Therefore, in the semiconductor light emitting device 100 of the above embodiment, the external leads 50 arranged outside the cap 40 are arranged so as to be positioned in the region Z1 inside the outline 30c. Thus, as shown in FIG. 3, when two or more semiconductor light emitting devices 100 are arranged close to each other, in two adjacent semiconductor light emitting devices 100, the external leads 50 of one semiconductor light emitting device 100 are connected to the other. It becomes difficult to contact the semiconductor light emitting device 100. Therefore, a plurality of semiconductor light emitting devices 100 can be arranged close to each other. Thereby, the semiconductor light emitting device array 1 having a small area and high output can be configured.

  The method for manufacturing the semiconductor light emitting device 100 includes a first component member preparation step, a second component member preparation step, a cap coating step, and a cap adhesion step.

  The first component member preparing step includes a base 30 including a mounting surface 30a and a heat radiating surface 30b located on opposite sides, an internal lead 60 mounted on the mounting surface 30a side of the base 30, and the base 30 A first component having the semiconductor light emitting element 10 attached to the attachment surface 30a side and electrically connected to the internal lead 60 is prepared. The second component member preparing step includes a cap 40 provided with a through hole 41b, a cap 40 attached to the through hole 41b of the cap 40, one end disposed inside the cap 40, and the other end outside the cap 40. A second component member having an external lead 50 disposed in the space is prepared. In the cap coating step, the semiconductor light emitting element 10 and the internal lead 60 are covered with the cap 40, and the external lead 50 and the internal lead 60 are electrically connected inside the cap 40. In the cap bonding step, the cap 40 and the mounting surface 30a of the base body 30 are bonded. In the cap coating step, the external lead 50 is located in a region Z1 on the inner side of the outline 30c of the base body 30 when viewed from the normal direction of the mounting surface 30a. Note that the first component member preparation step and the second component member preparation step may be preceded.

  Therefore, as described above, the external lead 50 penetrates the cap 40 without penetrating the base body 30. That is, since there is no external lead on the heat dissipation surface 30b side of the base body 30, it is possible to configure the semiconductor light emitting device 100 that can dissipate heat from the entire lower surface of the base body 30 and improve heat dissipation. Further, since the external lead 50 is located in the region Z1 inside the outline 30c of the base body 30 as viewed from the normal direction of the mounting surface 30a, a plurality of semiconductor light emitting devices 100 can be arranged close to each other. Thus, the semiconductor light emitting device 100 with improved alignment can be configured.

  Hereinafter, main members used in the semiconductor light emitting device 100 will be described in detail. Each member may be at least one, and a plurality of members may be provided.

(Substrate 30)
The base body 30 has at least a mounting surface 30a and a heat radiating surface 30b located on the opposite side of the mounting surface 30a. The heat radiation surface 30b of the base 30 is preferably flat. By doing so, the entire lower surface of the base body 30 can be made the heat radiating surface 30b, so that heat is easily exhausted. The mounting surface 30a may be flat or may be provided with a convex portion 31. In this embodiment, the mounting surface 30a has the convex portion 31. That is, the outer peripheral portion of the mounting surface 30a is a flat portion, and the inside of the mounting surface 30a is a convex portion 31 at a higher position than the flat portion. By doing so, when the convex portion 31 and the cap 40 are fitted together, the internal lead 60 and the external lead 50 are connected, so that the alignment between the internal lead 60 and the external lead 50 fits the cap 40. It can be done at the same time. In this specification, the “mounting surface” is a surface of the base body 30 on which the cap 40 and the semiconductor light emitting element are mounted. When the heat dissipation surface of the base body 30 is a bottom surface, the opposite surface is the mounting surface. Surface.

  The base body 30 is configured, for example, by sequentially performing nickel plating and gold plating on the surface of an Fe—Cu—Fe clad material. The constituent material of the substrate 30 may be metal, ceramic, or a combination thereof.

  The shape of the base body 30 is rectangular when viewed from above, but is not limited to this shape, and may be, for example, circular. In addition, mounting holes (not shown) (same as the mounting holes 35 in FIG. 4A) are provided at the four corners of the base body 30. The mounting hole is a hole for mounting the heat dissipation member.

(Heat sink 20)
A heat sink 20 can be attached to the base 30. In the present embodiment, the heat sink 20 is attached to the convex portion 31 of the attachment surface 30a. The heat sink 20 is composed of a member with good heat dissipation, such as copper or aluminum. When the heat sink 20 is made of copper, the heat sink 20 is bonded to the base body 30 by, for example, silver brazing. In addition, in the region where the heat sink 20 of the substrate 30 is bonded, it is preferable that the Fe layer of the substrate 30 made of the Fe—Cu—Fe clad material is previously removed by machining or chemical etching. By doing so, the accuracy of brazing the heat sink 20 to the base 30 and the thermal conductivity between the heat sink 20 and the base 30 can be improved.

  The heat sink 20 can have various shapes according to the application. The semiconductor light emitting device 100 has a mounting surface 20a, an inclined surface 20b, and a flat surface 20c on the upper surface of the heat sink 20. The mounting surface 20a on which the semiconductor light emitting element 10 (laser diode chip (LD chip) in the semiconductor light emitting device 100) 10 of the heat sink 20 is mounted is parallel to the mounting surface 30a. That is, the LD chip 10 is placed flat on the heat sink 20. The flat surface 20c is parallel to the mounting surface 20a and is at a higher position away from the mounting surface 30a than the mounting surface 20a. The inclined surface 20b is inclined with respect to the mounting surface 20a, and is connected between the mounting surface 20a and the flat surface 20c. The photodiode 15 is attached to the inclined surface 20b, and the internal lead 60 is attached to the flat surface 20c.

(LD chip 10)
The LD chip 10 is attached to the mounting surface 20 a of the heat sink 20 via the submount 70. A nitride semiconductor element can be used as the LD chip 10. The LD chip 10 is an edge-emitting type, and emits a laser beam 200 in a direction parallel to the mounting surface 20a. The submount 70 is obtained by providing a predetermined metal thin film pattern on an insulating member such as a ceramic substrate made of aluminum nitride, aluminum oxide, or the like.

(Internal lead 60)
The internal lead 60 is attached to the heat sink 20 via an insulating material 80, for example, and is disposed inside the cap 40. As the insulating material 80, for example, alumina ceramic can be used. The insulating material 80 is bonded to the heat sink 20 by, for example, silver brazing, and the surface of the internal lead 60 is sequentially subjected to, for example, nickel plating and gold plating.

  One end of the internal lead 60 (end on the external lead side) has an internal terminal 64 and is connected to the external lead 50. Further, the other end of the internal lead 60 is bonded to the insulating material 80 through, for example, silver solder, and is electrically connected to the LD chip 10 through the wire 62. At this time, since the wire is protected by the cap, there is no fear of wire breakage when the semiconductor light emitting device is handled. Since the cap does not apply a load to the wire during the driving of the semiconductor light emitting device as compared with the case where the cap is sealed with resin, the cap is preferably covered with the cap.

(Cap 40)
The cap 40 is attached to the attachment surface 30 a so as to cover the LD chip 10 and the internal lead 60. For the cap 40, for example, a member containing metal, ceramic, or the like can be used.

  The cap 40 has a main body portion 41 provided with a recess for accommodating the LD chip 10 and the like, and an outer flange portion 42 extending outward from the end of the main body portion 41. In the present embodiment, the main body 41 is box-shaped and covers the LD chip 10 and the heat sink 20.

  The outer flange portion 42 can be bonded to the mounting surface 30a by projection welding. In the projection welding, the outer flange portion 42 partially has a protrusion 43 (see FIG. 2B), and the protrusion 43 and the base body 30 are bonded. By bonding the cap 40 and the base body 30 by projection welding, it is possible to shorten the work time for welding the cap 40 and the base body 30 and to reduce the manufacturing cost while ensuring the airtightness inside the cap.

  A through hole 41 b is provided in the main body 41 of the cap 40. In the semiconductor light emitting device 100, a through hole 41b is provided in the ceiling portion of the main body 41 (the surface of the cap 40A facing the mounting surface 30a of the base 30), and the external lead 50 is attached to the through hole 41b. The through hole 41b is located in a region Z2 inside the outer flange portion 42 of the cap 40, and the external lead 50 is attached in a state of penetrating the cap 40. The through hole is not linear and may be bent. If it is linear, it is easy to manufacture. If bent, the external lead is less likely to come off against an external force applied to the external lead in the normal direction of the mounting surface.

  A window 41a is provided on a side surface of the main body 41, and a window body 46 is attached to the window 41a. The main body portion 41 is fitted to the convex portion 31 of the base body 30. The outer flange portion 42 is bonded to the flat portion of the mounting surface 30a.

(External lead 50)
The external lead 50 is fixed to the through hole 41b of the cap 40 via an insulating material 52, for example. For example, nickel plating and gold plating are sequentially performed on the surface of the external lead 50. The insulating material 52 is made of, for example, borosilicate glass or soda barium-based soft glass.

  One end of the external lead 50 (end on the internal lead side) has an external terminal 54. A spring can be used as the external terminal 54, and a spring tray can be used as the internal terminal 64 of the internal lead 60. In the semiconductor light emitting device 100, the external terminal 54 is a coil spring, and the internal terminal 64 of the internal lead 60 is a spring tray. The external terminal 54 that is a coil spring is in contact with the internal terminal 64 that is a spring tray in a compressed state. Thus, since the external terminal 54 is in contact with the internal terminal 64 in a compressed state, the external terminal 54 has a shrinkage allowance. Thereby, when the LD chip 10 and the internal lead 60 are covered with the cap 40, the internal terminal 64 and the external terminal 54 can be brought into contact before the base 30 and the cap 40 are brought into contact with each other. Moreover, since the internal lead 60 and the external lead 50 are connected in a compressed state, the internal lead 60 and the external lead 50 can be reliably connected. Accordingly, it is possible to prevent a poor electrical connection between the internal lead 60 and the external lead 50.

  The other end of the external lead 50 is electrically connected to an external wiring (not shown). As a result, external power can be supplied to the LD chip 10 via the external lead 50 and the internal lead 60.

  The external lead 50 is located in a region Z1 inside the outline 30c of the base body 30 when viewed from the normal direction of the mounting surface 30a of the base body 30. The outline 30c of the base body 30 is a contour line located on the outermost side of the base body 30 when viewed from the normal direction of the mounting surface 30a. By doing so, a plurality of light emitting devices 100 can be arranged close to each other. In this embodiment, the outline 30c of the base body 30 coincides with the contour line of the mounting surface 30a, and the outline line 30c of the base body 30 is rectangular.

  Further, the external lead 50 can be provided in a direction perpendicular to the mounting surface 30a. That is, the portion of the external lead 50 that is disposed outside the cap 40 is located in a region Z <b> 2 inside the outer collar portion 42 as viewed from the normal direction of the outer collar portion 42 of the cap 40. At this time, a portion of the external lead 50 disposed outside the cap 40 extends in a direction intersecting the mounting surface 30 a of the base body 30. By doing so, as will be described later, the cap 40 and the base 30 can be bonded using projection welding, so that the manufacturing cost and tact time can be reduced.

  Next, a method for manufacturing the semiconductor light emitting device 100 will be described in detail.

(Method for Manufacturing Semiconductor Light-Emitting Device 100)
First, referring to FIG. 1, a first component member having a base 30, an internal lead 60, and an LD chip 10 is prepared (first component member preparing step). In the first component preparing step, the heat sink 20 is attached to the base body 30 and the LD chip 10 is attached to the heat sink 20. The heat sink 20 is attached to the base body 30, and the internal leads 60 are attached to the heat sink 20. The LD chip 10 and the internal lead 60 are electrically connected. At this time, either the LD chip 10 or the internal lead 60 may be attached to the base 30 first.

  And the 2nd structural member which has the cap 40 and the external lead 50 is prepared (2nd structural member preparation process). In the second component preparing step, the external lead 50 is attached to the through hole 41b of the cap 40 so that one end of the external lead 50 is disposed inside the cap 40 and the other end of the cap 40 is disposed outside the cap 40. . At this time, the portion of the external lead 50 disposed outside the cap 40 is positioned in the region Z2 inside the outer flange portion 42 when viewed from the normal direction with respect to the outer flange portion 42 of the cap 40. The external lead 50 is attached to the cap 40.

  Then, the LD chip 10 and the internal lead 60 are covered with the cap 40, and the external lead 50 and the internal lead 60 are electrically connected inside the cap 40 (cap covering step).

  At this time, the coil spring that is the external terminal 54 of the external lead 50 and the spring tray that is the internal terminal 64 of the internal lead 60 are contacted and connected in a compressed state. Thus, since the external terminal 54 is in contact with the internal terminal 64 in a compressed state, the external terminal 54 has a shrinkage allowance. Thereby, when the LD chip 10 and the internal lead 60 are covered with the cap 40, the internal terminal 64 and the external terminal 54 can be brought into contact before the base 30 and the cap 40 are brought into contact with each other. Further, since the internal lead 60 and the external lead 50 are connected in a compressed state, the internal lead 60 and the external lead 50 can be firmly connected. Accordingly, it is possible to prevent a poor electrical connection between the internal lead 60 and the external lead 50.

  In addition, since there is no external lead on the side surface of the cap 40, when the cap 40 is vacuum-sucked, the portion disposed outside the external lead 50 is less likely to come into contact with the vacuum suction collet. Furthermore, since the cap can be transported using a vacuum suction collet that fits to the outer surface of the cap 40, it is easy to position the cap 40 when it is placed on the base 30.

  And the outer collar part 42 and the attachment surface 30a of the cap 40 are adhere | attached (cap adhesion process).

  According to the method for manufacturing the semiconductor light emitting device 100 having the above-described configuration, a semiconductor light emitting device that can improve heat dissipation and alignment can be manufactured.

  In the cap covering step, the cap 40 is brought into contact with the mounting surface 30a by fitting the inside of the cap 40 to the convex portion 31 of the base body 30. Therefore, since the inside of the cap 40 is fitted to the convex portion 31 provided on the base body 30 and the cap 40 is brought into contact with the mounting surface 30a, the cap 40 can be easily attached to the base body 30.

  In the cap bonding step, as shown in FIG. 2A, the cap 40 and the base 30 are bonded by projection welding using a projection welder 300. The projection welder 300 includes a cylindrical upper electrode 310 as a first electrode and a cylindrical lower electrode 320 as a second electrode. The outer flange portion 42 of the cap 40 and the base body 30 are sandwiched between the upper electrode 310 and the lower electrode 320 from the normal direction of the outer flange portion 42. At this time, the portion of the external lead 50 disposed outside the cap 40 is located in the region Z2 inside the outer flange portion 42, so the external lead 50 is disposed in the central hole of the upper electrode 310. Thus, the external lead 50 does not contact the upper electrode 310 and the lower electrode 320.

  The outer electrode portion 42 of the cap 40 is energized by the upper electrode 310 and the lower electrode 320. At this time, as shown in FIG. 2B, the outer flange portion 42 has a protrusion 43 on the side to be bonded to the mounting surface 30a, and the protrusion 43 is bonded to the mounting surface 30a.

  For comparison, let us consider a case where the cap and the base body are to be bonded by projection welding when the lead portion extends in a direction parallel to the mounting surface. When the cap and the base are sandwiched between the upper electrode and the lower electrode from the normal direction of the mounting surface, the external lead contacts the upper electrode and the lower electrode. For this reason, projection welding cannot be used for welding the cap and the substrate, and other bonding means capable of hermetic sealing, for example, resistance seam welding, must be used. However, for example, resistance seam welding requires a longer working time than projection welding, resulting in increased manufacturing costs. On the other hand, in this embodiment, since projection welding can be used, working time is shortened compared with other welding methods such as resistance seam welding, and as a result, manufacturing costs can be reduced.

  Next, application examples of the semiconductor light emitting device 100 will be described.

(Semiconductor light emitting device array 1)
FIG. 3 is a rear view of the semiconductor light emitting device array 1. The semiconductor light emitting device array 1 includes a heat radiating member 2 and a plurality of semiconductor light emitting devices 100 attached to the heat radiating member 2. The heat radiating member 2 has a flat base 2a and fin portions 2b attached to one surface of the base 2a. The plurality of semiconductor light emitting devices 100 are attached to the other surface of the base 2a.

  The external leads 50 of adjacent semiconductor light emitting devices 100 are electrically connected via the wiring member 3. For example, the semiconductor light emitting device 100 includes an anode-side external lead 50 and a cathode-side external lead 50. In the adjacent semiconductor light emitting device 100, the anode-side external lead 50 of one semiconductor light-emitting device 100 and the cathode-side external lead 50 of the other semiconductor light-emitting device 100 are electrically connected via the wiring member 3. A plurality of semiconductor light emitting devices 100 are connected in series via the wiring member 3.

  The wiring member 3 can be connected to the external lead 50 by, for example, solder. At this time, since the external lead 50 is not attached to the base body 30, heat is hardly transmitted between the external lead 50 and the base body 30. Further, by attaching a jig having a large heat capacity to the heat radiating surface side of the base, the external lead 50 is sufficient for soldering while suppressing the temperature rise of the base 30 (and the semiconductor light emitting element 10) when placed in the reflow furnace. Temperature. For this reason, it can solder using a reflow furnace simultaneously with other electronic components, and the productivity of the process of attaching the semiconductor light-emitting device 100 to the wiring member 3 improves. Also, when soldering using a soldering iron, there is a distance from the external lead to be soldered to the semiconductor light emitting element, so that the semiconductor light emitting element is not easily deteriorated by heat. In this case, the cap 40 can be made of a material that is thinner than the base 30 and has a low thermal conductivity. For example, a plastic etc. are mentioned.

  According to the semiconductor light emitting device array 1, since the semiconductor light emitting device 100 is provided, a plurality of semiconductor light emitting devices 100 can be arranged close to each other, and the semiconductor light emitting device array 1 having a small area and high output can be configured. it can.

(Second Embodiment)
FIG. 4A is a plan view showing a semiconductor light emitting device 100A according to the second embodiment of the present invention. FIG. 4B is a front view of the semiconductor light emitting device. FIG. 4C is a side view of the semiconductor light emitting device. 4D is a cross-sectional view taken along line XX of FIG. 4B. The second embodiment is different from the first embodiment only in the configuration of the base, the heat sink, the cap, the external lead, and the internal lead. Only this different configuration will be described below. In the second embodiment, the same reference numerals as those in the first embodiment have the same configurations as those in the first embodiment, and thus description thereof is omitted.

  As shown in FIG. 4D, in the semiconductor light emitting device 100A of the second embodiment, the attachment surface 30a and the heat dissipation surface 30b of the base body 30A are flat and parallel to each other. By doing so, it becomes easy to attach a heat radiating member such as a heat radiating fin or a water-cooled heat sink to the heat radiating surface.

  In the light emitting device 100A, the shape of the heat sink 20A is a triangle in a sectional view taken along line XX in FIG. 4B. That is, the mounting surface 20a is inclined with respect to the mounting surface 30a. As described above, the mounting surface 20a is inclined with respect to the mounting surface 30a, so that the distance between the LD chip 10 mounted on the mounting surface 20a and the base body 30A is shorter than that of a rectangular parallelepiped having the same volume. it can. Therefore, the heat path from the LD chip 10 to the base 30A via the heat sink 20A can be shortened, and the heat dissipation can be improved.

  When the mounting surface 20a is a surface inclined with respect to the mounting surface 30a of the base body 30A, the angle α formed by the mounting surface 20a and the mounting surface 30a is preferably 40 ° or more and 80 ° or less, More preferably, it is 40 ° or more and 60 ° or less. When the angle α is larger than the upper limit value, the heat sink 20A is increased in size. However, the heat sink does not have to be increased in size by setting the angle to a certain angle or less. Further, when the angle α is smaller than the lower limit value, the LD chip 10 approaches the mounting surface 30a, so the window body 46 also needs to be disposed near the mounting surface 30a, and the strength of the cap 40A that supports the window body 46 decreases. However, the strength of the cap 40A can be maintained by setting the angle to a certain level or more. In addition, when using an LD chip, if the angle is less than a certain angle, light easily hits the substrate 30 and the like, so that interference fringes may occur due to reflection. It is possible to prevent hitting 30 mag.

  The main body 41A has a window 41a for taking out the laser light 200 emitted from the LD chip 10. A window body 46 is bonded to the window portion 41a via a lead-free low melting point glass 48. The window body 46 is made of, for example, hard glass having an antireflection film coated on both sides. The window body 46 is preferably arranged so as to be perpendicular to the optical axis of the laser beam 200 of the LD chip 10. By doing so, the generation of astigmatic difference due to the window body 46 can be suppressed.

  One end of the external lead 50A is disposed inside the cap 40A, and the other end of the external lead 50A is disposed outside the cap 40A. One end of the external lead 50A (end on the internal lead side) has an external terminal 54A. The external terminal 54A is a female terminal. One end of the internal lead (end on the external lead side) has an internal terminal, and the internal terminal is, for example, a male terminal.

  The external lead 50A is electrically connected to the internal lead 60A inside the cap 40A. More specifically, the male internal terminal 64A and the female external terminal 54A have an overlap allowance, and are overlapped with each other. Thus, when the LD chip 10 and the internal lead 60A are covered with the cap 40A, the internal terminal 64A and the external terminal 54A can be fitted before the base 30A and the cap 40A are brought into contact with each other. Further, since the internal lead 60A and the external lead 50A are fitted and connected to each other, the internal lead 60A and the external lead 50A can be reliably connected. Therefore, it is possible to prevent poor electrical connection between the internal lead 60A and the external lead 50A.

  Next, a method for manufacturing the semiconductor light emitting device 100A will be described. This manufacturing method includes a first component member preparation step, a second component member preparation step, a cap coating step, and a cap adhesion step. The first component member preparing step, the second component member preparing step, and the cap bonding step are the same as the first component member preparing step, the second component member preparing step, and the cap bonding step of the first embodiment.

  Next, application examples of the semiconductor light emitting device 100A will be described.

  5A and 5B show a semiconductor light emitting device array 1A. The semiconductor light emitting device array 1A includes a heat radiating member 2A and a plurality of semiconductor light emitting devices 100A attached to the heat radiating member 2A. 2 A of heat radiating members have the base 2a and the fin part 2b attached to one surface of the base 2a. The base 2a is formed in a continuous mountain shape. A plurality of semiconductor light emitting devices 100A are attached to the other surface of the base 2a so that the windows 46 are arranged on substantially the same surface.

  In the two bases 2a formed continuously, an angle between the other surfaces of each base 2a is defined as an angle β. The angle β is set to twice the angle α formed by the mounting surface 20a and the mounting surface 30a shown in FIG. 4D. By so doing, the optical axis of the LD chip 10 of the semiconductor light emitting device 100A mounted on one of the bases 2a can be made parallel. That is, the plurality of semiconductor light emitting devices 100A can be arranged so that the windows 46 are arranged on substantially the same plane.

  In the semiconductor light emitting device 100A of the present embodiment, since the surface of the cap 40A on which the window 41a is disposed is different from the surface on which the external lead 50A is provided, the surface on which the external lead 50A is provided faces each other. The plurality of semiconductor light emitting devices 100A can be arranged so that the windows 46 are arranged on substantially the same plane. At this time, when the surface of the cap 40A on which the external lead 50A is provided is a surface perpendicular to the surface of the cap 40 on which the window 41a is disposed, the cap 40A can be easily disposed facing each other. A portion of the external lead 50 </ b> A disposed outside the cap 40 </ b> A is bent inward and attached to the wiring member 3. The external leads 50A of the adjacent semiconductor light emitting device 100A are electrically connected via the wiring member 3 (wiring 3b provided on the substrate 3a). For example, in the example shown in FIG. 5A, the semiconductor light emitting devices 100A are alternately arranged with the wiring member 3 interposed therebetween, and the anode and the cathode of the semiconductor light emitting device 100A are electrically connected alternately from the left to the right in the figure. They are connected in series. Specifically, the external lead 50A on the anode side of the upper left semiconductor light emitting device 100A is electrically connected to the external lead 50A on the cathode side of the lower right semiconductor light emitting device 100A, and further the anode of the semiconductor light emitting device 100A. The external lead 50A on the side is electrically connected to the external lead 50A on the cathode side of the lower left semiconductor light emitting device 100A.

  According to the semiconductor light emitting device array 1A, since the semiconductor light emitting device 100A is provided, a plurality of semiconductor light emitting devices 100A can be arranged close to each other, and a high output semiconductor light emitting device array 1A with a small area can be provided.

(Third embodiment)
FIG. 6 is a sectional view showing a semiconductor light emitting device according to the third embodiment of the present invention. The third embodiment differs from the second embodiment only in the configuration of the base, the heat sink, and the cap. Only this different configuration will be described below. In the third embodiment, the same reference numerals as those of the second embodiment have the same configurations as those of the second embodiment, and thus the description thereof is omitted.

  As shown in FIG. 6, in the semiconductor light emitting device 100B of the third embodiment, the mounting surface 20a on which the LD chip 10 of the heat sink 20B is mounted is parallel to the mounting surface 30a. The LD chip 10 emits a laser beam 200 in a direction parallel to the mounting surface 20a and the mounting surface 30a. That is, the LD chip 10 is placed flat on the heat sink 20B. Thus, the present invention can also be applied to a flat type apparatus. Internal leads 60 are attached to the mounting surface 20a.

  In the light emitting device 100B, the base 30 has a convex portion as in the first embodiment. At this time, the relationship between the height h1 of the convex portion and the fitting length h2 between the external terminal 54A and the internal terminal 64A is such that h1 ≧ h2 in a range where the internal terminal 64A contacts the external terminal 54A. Is preferred. In this way, when the convex portion 31 and the cap 40B are fitted, the external lead 50A and the internal lead 60 are inevitably connected, so that the connection between the internal lead 60A and the external lead 50A is reliable. Can be done.

  The cap 40B includes a box-shaped main body portion 41B and an outer flange portion 42B extending outward from the opening end of the main body portion 41B. A through hole 41b is provided in the main body portion 41B, and an external lead 50 is attached to the through hole 41b. A window portion 41a is provided on the ceiling portion of the main body portion 41B (the surface of the cap 40A that faces the mounting surface 30a of the base 30 and the same surface as the surface on which the through hole 41b is provided in the light emitting device 100B). A window body 46 is attached to 41a. The outer flange portion 42B is bonded to the mounting surface 30a.

  A reflection prism 90 for reflecting the laser beam 200 emitted from the LD chip 10 to the window body 46 is attached to the base 30. In this way, light can be reflected and extracted efficiently.

  Next, a method for manufacturing the semiconductor light emitting device 100B will be described. This manufacturing method includes a first component member preparation step, a second component member preparation step, a cap coating step, and a cap adhesion step, which are the same as those in the first embodiment.

(Fourth embodiment)
FIG. 7 is a sectional view showing a semiconductor light emitting device according to the fourth embodiment of the present invention. The fourth embodiment is different from the first embodiment only in the configuration of the base and the cap. Only this different configuration will be described below. In the fourth embodiment, the same reference numerals as those in the first embodiment are the same as those in the first embodiment, and the description thereof is omitted.

  In the semiconductor light emitting device 100 </ b> C of the fourth embodiment, the base body 30 </ b> C includes a bottom portion 35 and a side wall 33 provided on the outer peripheral portion of the bottom portion 35. A space surrounded by the bottom 35 and the side wall 33 constitutes the recess 32. The inner surface of the bottom 35 is the mounting surface 30a, and the outer surface of the bottom 35 is the heat radiating surface 30b. The base body 30 </ b> C has an outer flange portion 34 that extends outward from an end portion of the side wall 33 opposite to the mounting surface 30 a. The cap 40C is formed in a plate shape. The cap 40C closes the opening of the base body 30C. This makes the positional relationship between the LD chip 10 and the window body 36 independent of the assembly accuracy of the cap 40C, and particularly when the window body 36 has an optical element (including a lens, diffraction grating, optical fiber, etc.) function. The light extraction efficiency is stabilized.

  The LD chip 10 and the internal lead 60 are housed in the recess 32 of the base body 30C. The side wall 33 is provided with a window portion 33a, and a window body 36 is attached to the window portion 33a. The outer flange portion 34 of the base body 30C is bonded to the lower surface of the cap 40C. The outer peripheral surface of the outer flange portion 34 corresponds to the outer shape line 30 c of the base body 30. The external lead 50 is located in a region Z1 inside the outline 30c of the base body 30.

  The cap 40C is provided so as to close the opening of the base body 30C. In the present embodiment, the cap 40C has a plate shape, and the external lead 50 is provided in a region Z3 inside the portion 49 of the cap 40C that is connected to the outer flange portion 34 of the base body 30C. In the first embodiment, the convex portion 31 is provided on the base body 30 and is fitted to the cap 40. However, in the fourth embodiment, the convex portion 31 is provided on the cap 40C, and the convex portion 31 is provided on the base body 30C. You may fit with the recessed part 32. FIG.

  The present invention is not limited to the above-described embodiment, and the design can be changed without departing from the gist of the present invention. For example, the feature points of the first to fourth embodiments may be variously combined.

  In the first to fourth embodiments, the portion of the external lead disposed outside the cap is located in a region inside the outer flange portion even after the outer flange portion and the mounting surface of the cap are bonded. However, the portion of the external lead that is disposed outside the cap may be bent out after the outer flange portion and the mounting surface of the cap are bonded, and may protrude outside the outer flange portion. In short, the portion disposed on the outer side of the cap of the external lead only needs to be located in a region inside the outer flange portion when the outer flange portion of the cap and the mounting surface of the base are bonded.

  In the first to fourth embodiments, the portion arranged on the outer side of the cap of the external lead extends in a direction intersecting the mounting surface of the base, but is inside the outline of the base. As long as it is located in this area, it may extend parallel to the mounting surface of the base.

  In the first to fourth embodiments, the edge-emitting LD chip is used as the semiconductor light-emitting element. However, a surface-emitting LD chip (Vertical Cavity Surface Emitting LASER: VCSEL), a light-emitting diode, a light-emitting transistor, A light emitting thyristor or the like can be used. Preferably, an LD chip is used. The number of semiconductor light emitting elements is not limited to one, but may be plural.

  In the first to fourth embodiments, the LD chip is attached to the base via a heat sink, but the heat sink may be omitted and the LD chip may be attached directly to the base. Alternatively, the mounting surface of the base may have a convex part that partially protrudes, and the LD chip may be directly attached to the convex part.

  In the first to fourth embodiments, the second component member preparing step is performed after the first component member preparing step. However, before the first component member preparing step is performed, the second component member preparing step is performed. You may make it perform a process.

  In the first and fourth embodiments, the internal terminal of the internal lead is a male terminal and the external terminal of the external lead is a female terminal, but the internal terminal is a female terminal and the external terminal is a male terminal. It is good.

  In the first embodiment, the internal terminal of the internal lead is a spring tray and the external terminal of the external lead is a coil spring. However, the internal terminal may be a coil spring and the external terminal may be a spring tray. In addition to a coil spring, a leaf spring can be used as the internal terminal or the external terminal.

  In the third embodiment, a cap provided with a recess is placed on a plate-like substrate. However, as in the fourth embodiment, a recess is formed in the substrate and the cap is formed in a plate shape. You can also

  In the semiconductor light-emitting device of the present invention, the material and quantity of components such as the base, the cap, the internal lead, the external lead, and the heat sink can be changed in design.

  The semiconductor light emitting device of the present invention can be applied to a semiconductor light emitting device used for an optical disc system, a light projection device (laser marker, laser projector, laser printer, headlight, etc.), an exposure device, and the like.

DESCRIPTION OF SYMBOLS 1,1A Semiconductor light-emitting device array 2,2A Heat radiation member 3 Wiring member 3a Substrate 3b Wiring 10 LD chip (semiconductor light emitting element)
20, 20A, 20B Heat sink 20a Mounting surface 30, 30A, 30C Base body 30a Mounting surface 30b Heat dissipation surface 30c Outline 31 Protrusion 40, 40A, 40B, 40C Cap 41, 41A, 41B Main body portion 41b Through hole 42, 42A, 42B Outer flange portion 50, 50A External lead 54, 54A External terminal 60, 60A Internal lead 64, 64A Internal terminal 100, 100A, 100B, 100C Semiconductor light emitting device 300 Projection welding machine 310 Upper electrode 320 Lower electrode Z1 Than outline of base Inner area Z2 Inner area than the outer flange of the cap Z3 Inner area than the portion of the cap connected to the base

Claims (11)

A base having a mounting surface and a heat dissipating surface located on the opposite side of the mounting surface;
A semiconductor light emitting element attached to the attachment surface side of the substrate;
An internal lead attached to the mounting surface side of the base and electrically connected to the semiconductor light emitting element;
A cap attached to the mounting surface of the base so as to cover the semiconductor light emitting element and the internal lead, and a through hole provided;
An external lead attached to the through hole of the cap, one end electrically connected to the internal lead inside the cap, and the other end arranged outside the cap;
The semiconductor light emitting device, wherein the external lead is located in a region inside the outline of the base body when viewed from the normal direction of the mounting surface of the base body. The semiconductor light-emitting device according to claim 1.
The cap has an outer collar portion,
The light emitting device according to claim 1, wherein the through hole of the cap is located in a region inside the outer flange portion. The semiconductor light-emitting device according to claim 1 or 2,
The semiconductor light emitting device according to claim 1, wherein the heat radiation surface of the substrate is flat. The semiconductor light-emitting device according to any one of claims 1 to 3,
Comprising a heat sink attached to the attachment surface of the substrate;
The semiconductor light emitting element is mounted on the heat sink,
A semiconductor light-emitting device, wherein a mounting surface for mounting the semiconductor light-emitting element of the heat sink is inclined with respect to the mounting surface of the base. The semiconductor light-emitting device according to any one of claims 1 to 3,
Comprising a heat sink attached to the attachment surface of the substrate;
The semiconductor light emitting element is mounted on the heat sink,
The semiconductor light-emitting device, wherein a mounting surface on which the semiconductor light-emitting element of the heat sink is mounted is parallel to the mounting surface of the base.   6. A semiconductor light emitting device array, wherein a plurality of the semiconductor light emitting devices according to claim 1 are arranged. A base including a mounting surface and a heat dissipation surface located on opposite sides of each other, an internal lead attached to the mounting surface of the base, and attached to the mounting surface of the base and electrically connected to the internal lead A first component member preparing step of preparing a first component member having a semiconductor light emitting element formed;
A second component having a cap provided with a through-hole, and an external lead attached to the through-hole of the cap, having one end disposed inside the cap and the other end disposed outside the cap. A second component preparation step to prepare;
Cap covering step of covering the semiconductor light emitting element and the internal lead with the cap, and electrically connecting the external lead and the internal lead inside the cap;
A cap adhering step for adhering the cap and the mounting surface of the base;
In the cap coating step, the external lead is located in a region inside the outline of the base body when viewed from the normal direction of the mounting surface of the base body. . In the manufacturing method of the semiconductor light-emitting device according to claim 7,
The cap has an outer collar portion,
The through hole of the cap is located in a region inside the outer flange portion,
A method of manufacturing a semiconductor light emitting device, wherein, in the step of bonding the cap, the outer flange portion of the cap and the mounting surface of the base are bonded by projection welding. In the manufacturing method of the semiconductor light-emitting device according to claim 7 or 8,
The base has a convex portion on the mounting surface,
A method of manufacturing a semiconductor light emitting device, wherein, in the cap covering step, the cap is brought into contact with the mounting surface of the base by fitting the inside of the cap into the convex portion of the base. In the manufacturing method of the semiconductor light-emitting device according to any one of claims 7 to 9,
The internal lead has one of a male terminal or a female terminal attached to an end on the external lead side,
The external lead has the other of a male terminal or a female terminal attached to an end on the internal lead side,
In the cap coating step, the male terminal and the female terminal are fitted and connected to each other. The semiconductor light emitting device according to any one of claims 7 to 9,
The internal lead has one of a spring or a spring tray attached to an end on the external lead side,
The external lead has the other of a spring or a spring tray attached to an end on the internal lead side,
In the cap coating step, the spring is in contact with and connected to the spring tray.

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