WO2019069738A1 - 発光層の形成方法および発光素子の製造方法 - Google Patents
発光層の形成方法および発光素子の製造方法 Download PDFInfo
- Publication number
- WO2019069738A1 WO2019069738A1 PCT/JP2018/035306 JP2018035306W WO2019069738A1 WO 2019069738 A1 WO2019069738 A1 WO 2019069738A1 JP 2018035306 W JP2018035306 W JP 2018035306W WO 2019069738 A1 WO2019069738 A1 WO 2019069738A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- pressure
- nanocrystals
- emitting layer
- ink
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title description 15
- 239000002270 dispersing agent Substances 0.000 claims abstract description 65
- 238000000576 coating method Methods 0.000 claims abstract description 64
- 239000011248 coating agent Substances 0.000 claims abstract description 57
- 239000002612 dispersion medium Substances 0.000 claims abstract description 50
- 239000002245 particle Substances 0.000 claims abstract description 41
- 239000004054 semiconductor nanocrystal Substances 0.000 claims abstract description 18
- 238000009835 boiling Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 description 166
- 239000002159 nanocrystal Substances 0.000 description 124
- -1 octyl phosphine Phosphorus atom Chemical group 0.000 description 53
- 239000000463 material Substances 0.000 description 49
- 238000002347 injection Methods 0.000 description 47
- 239000007924 injection Substances 0.000 description 47
- 229920000642 polymer Polymers 0.000 description 34
- 150000001875 compounds Chemical class 0.000 description 31
- 230000005525 hole transport Effects 0.000 description 31
- 238000001035 drying Methods 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 18
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 17
- 239000000178 monomer Substances 0.000 description 14
- 229920001515 polyalkylene glycol Polymers 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 239000004094 surface-active agent Substances 0.000 description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 229920000728 polyester Polymers 0.000 description 9
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 9
- 239000002253 acid Substances 0.000 description 8
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 7
- 239000000470 constituent Substances 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- 125000002843 carboxylic acid group Chemical group 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- GHBSPIPJMLAMEP-UHFFFAOYSA-N 6-pentyloxan-2-one Chemical compound CCCCCC1CCCC(=O)O1 GHBSPIPJMLAMEP-UHFFFAOYSA-N 0.000 description 5
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 5
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 238000007646 gravure printing Methods 0.000 description 5
- 229920001519 homopolymer Polymers 0.000 description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 5
- 238000007644 letterpress printing Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 125000001302 tertiary amino group Chemical group 0.000 description 5
- GNKZMNRKLCTJAY-UHFFFAOYSA-N 4'-Methylacetophenone Chemical compound CC(=O)C1=CC=C(C)C=C1 GNKZMNRKLCTJAY-UHFFFAOYSA-N 0.000 description 4
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 4
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 4
- VLSVVMPLPMNWBH-UHFFFAOYSA-N Dihydro-5-propyl-2(3H)-furanone Chemical compound CCCC1CCC(=O)O1 VLSVVMPLPMNWBH-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- FHUODBDRWMIBQP-UHFFFAOYSA-N Ethyl p-anisate Chemical compound CCOC(=O)C1=CC=C(OC)C=C1 FHUODBDRWMIBQP-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- XSIFPSYPOVKYCO-UHFFFAOYSA-N butyl benzoate Chemical compound CCCCOC(=O)C1=CC=CC=C1 XSIFPSYPOVKYCO-UHFFFAOYSA-N 0.000 description 4
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 4
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 4
- YYZUSRORWSJGET-UHFFFAOYSA-N ethyl octanoate Chemical compound CCCCCCCC(=O)OCC YYZUSRORWSJGET-UHFFFAOYSA-N 0.000 description 4
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 4
- AOGQPLXWSUTHQB-UHFFFAOYSA-N hexyl acetate Chemical compound CCCCCCOC(C)=O AOGQPLXWSUTHQB-UHFFFAOYSA-N 0.000 description 4
- NCDCLPBOMHPFCV-UHFFFAOYSA-N hexyl hexanoate Chemical compound CCCCCCOC(=O)CCCCC NCDCLPBOMHPFCV-UHFFFAOYSA-N 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- QPJVMBTYPHYUOC-UHFFFAOYSA-N methyl benzoate Chemical compound COC(=O)C1=CC=CC=C1 QPJVMBTYPHYUOC-UHFFFAOYSA-N 0.000 description 4
- YRHYCMZPEVDGFQ-UHFFFAOYSA-N methyl decanoate Chemical compound CCCCCCCCCC(=O)OC YRHYCMZPEVDGFQ-UHFFFAOYSA-N 0.000 description 4
- GJQIMXVRFNLMTB-UHFFFAOYSA-N nonyl acetate Chemical compound CCCCCCCCCOC(C)=O GJQIMXVRFNLMTB-UHFFFAOYSA-N 0.000 description 4
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 4
- 229920002098 polyfluorene Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical group O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 125000000542 sulfonic acid group Chemical group 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 2
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 2
- IVSZLXZYQVIEFR-UHFFFAOYSA-N 1,3-Dimethylbenzene Natural products CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 2
- OHBQPCCCRFSCAX-UHFFFAOYSA-N 1,4-Dimethoxybenzene Chemical compound COC1=CC=C(OC)C=C1 OHBQPCCCRFSCAX-UHFFFAOYSA-N 0.000 description 2
- APQSQLNWAIULLK-UHFFFAOYSA-N 1,4-dimethylnaphthalene Chemical compound C1=CC=C2C(C)=CC=C(C)C2=C1 APQSQLNWAIULLK-UHFFFAOYSA-N 0.000 description 2
- CHLICZRVGGXEOD-UHFFFAOYSA-N 1-Methoxy-4-methylbenzene Chemical compound COC1=CC=C(C)C=C1 CHLICZRVGGXEOD-UHFFFAOYSA-N 0.000 description 2
- HDNRAPAFJLXKBV-UHFFFAOYSA-N 1-ethyl-4-methoxybenzene Chemical compound CCC1=CC=C(OC)C=C1 HDNRAPAFJLXKBV-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- NQMUGNMMFTYOHK-UHFFFAOYSA-N 1-methoxynaphthalene Chemical compound C1=CC=C2C(OC)=CC=CC2=C1 NQMUGNMMFTYOHK-UHFFFAOYSA-N 0.000 description 2
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 2
- RJTJVVYSTUQWNI-UHFFFAOYSA-N 2-ethylnaphthalene Chemical compound C1=CC=CC2=CC(CC)=CC=C21 RJTJVVYSTUQWNI-UHFFFAOYSA-N 0.000 description 2
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 2
- MLLAPOCBLWUFAP-UHFFFAOYSA-N 3-Methylbutyl benzoate Chemical compound CC(C)CCOC(=O)C1=CC=CC=C1 MLLAPOCBLWUFAP-UHFFFAOYSA-N 0.000 description 2
- MPAGVACEWQNVQO-UHFFFAOYSA-N 3-acetyloxybutyl acetate Chemical compound CC(=O)OC(C)CCOC(C)=O MPAGVACEWQNVQO-UHFFFAOYSA-N 0.000 description 2
- CRORGGSWAKIXSA-UHFFFAOYSA-N 3-methylbutyl 2-hydroxypropanoate Chemical compound CC(C)CCOC(=O)C(C)O CRORGGSWAKIXSA-UHFFFAOYSA-N 0.000 description 2
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 2
- LGDCSNDMFFFSHY-UHFFFAOYSA-N 4-butyl-n,n-diphenylaniline Polymers C1=CC(CCCC)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 LGDCSNDMFFFSHY-UHFFFAOYSA-N 0.000 description 2
- GYPAGHMQEIUKAO-UHFFFAOYSA-N 4-butyl-n-[4-[4-(n-(4-butylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound C1=CC(CCCC)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(CCCC)=CC=1)C1=CC=CC=C1 GYPAGHMQEIUKAO-UHFFFAOYSA-N 0.000 description 2
- HBTAOSGHCXUEKI-UHFFFAOYSA-N 4-chloro-n,n-dimethyl-3-nitrobenzenesulfonamide Chemical compound CN(C)S(=O)(=O)C1=CC=C(Cl)C([N+]([O-])=O)=C1 HBTAOSGHCXUEKI-UHFFFAOYSA-N 0.000 description 2
- PXRBWNLUQYZAAX-UHFFFAOYSA-N 6-Butyltetrahydro-2H-pyran-2-one Chemical compound CCCCC1CCCC(=O)O1 PXRBWNLUQYZAAX-UHFFFAOYSA-N 0.000 description 2
- YZRXRLLRSPQHDK-UHFFFAOYSA-N 6-Hexyltetrahydro-2H-pyran-2-one Chemical compound CCCCCCC1CCCC(=O)O1 YZRXRLLRSPQHDK-UHFFFAOYSA-N 0.000 description 2
- ZPQAKYPOZRXKFA-UHFFFAOYSA-N 6-Undecanone Chemical compound CCCCCC(=O)CCCCC ZPQAKYPOZRXKFA-UHFFFAOYSA-N 0.000 description 2
- LTUJKAYZIMMJEP-UHFFFAOYSA-N 9-[4-(4-carbazol-9-yl-2-methylphenyl)-3-methylphenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C(=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C)C(C)=C1 LTUJKAYZIMMJEP-UHFFFAOYSA-N 0.000 description 2
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 208000005156 Dehydration Diseases 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- LTEQMZWBSYACLV-UHFFFAOYSA-N Hexylbenzene Chemical compound CCCCCCC1=CC=CC=C1 LTEQMZWBSYACLV-UHFFFAOYSA-N 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- FEXQDZTYJVXMOS-UHFFFAOYSA-N Isopropyl benzoate Chemical compound CC(C)OC(=O)C1=CC=CC=C1 FEXQDZTYJVXMOS-UHFFFAOYSA-N 0.000 description 2
- PFYHAAAQPNMZHO-UHFFFAOYSA-N Methyl 2-methoxybenzoate Chemical compound COC(=O)C1=CC=CC=C1OC PFYHAAAQPNMZHO-UHFFFAOYSA-N 0.000 description 2
- 239000005640 Methyl decanoate Substances 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- PWATWSYOIIXYMA-UHFFFAOYSA-N Pentylbenzene Chemical compound CCCCCC1=CC=CC=C1 PWATWSYOIIXYMA-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- GWFGARXUJNKOMY-UHFFFAOYSA-N [3,5-di(carbazol-9-yl)phenyl]-triphenylsilane Chemical compound C1=CC=CC=C1[Si](C=1C=C(C=C(C=1)N1C2=CC=CC=C2C2=CC=CC=C21)N1C2=CC=CC=C2C2=CC=CC=C21)(C=1C=CC=CC=1)C1=CC=CC=C1 GWFGARXUJNKOMY-UHFFFAOYSA-N 0.000 description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 2
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 2
- 125000005600 alkyl phosphonate group Chemical group 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- UDEWPOVQBGFNGE-UHFFFAOYSA-N benzoic acid n-propyl ester Natural products CCCOC(=O)C1=CC=CC=C1 UDEWPOVQBGFNGE-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 125000003262 carboxylic acid ester group Chemical group [H]C([H])([*:2])OC(=O)C([H])([H])[*:1] 0.000 description 2
- 229910052956 cinnabar Inorganic materials 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- IYYZUPMFVPLQIF-UHFFFAOYSA-N dibenzothiophene Chemical compound C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 description 2
- MHDVGSVTJDSBDK-UHFFFAOYSA-N dibenzyl ether Chemical compound C=1C=CC=CC=1COCC1=CC=CC=C1 MHDVGSVTJDSBDK-UHFFFAOYSA-N 0.000 description 2
- OUWSNHWQZPEFEX-UHFFFAOYSA-N diethyl glutarate Chemical compound CCOC(=O)CCCC(=O)OCC OUWSNHWQZPEFEX-UHFFFAOYSA-N 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- RXKJFZQQPQGTFL-UHFFFAOYSA-N dihydroxyacetone Chemical class OCC(=O)CO RXKJFZQQPQGTFL-UHFFFAOYSA-N 0.000 description 2
- 229940031578 diisopropyl adipate Drugs 0.000 description 2
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 2
- 229960001826 dimethylphthalate Drugs 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 125000001033 ether group Chemical group 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- JBFHTYHTHYHCDJ-UHFFFAOYSA-N gamma-caprolactone Chemical compound CCC1CCC(=O)O1 JBFHTYHTHYHCDJ-UHFFFAOYSA-N 0.000 description 2
- OALYTRUKMRCXNH-QMMMGPOBSA-N gamma-nonanolactone Chemical compound CCCCC[C@H]1CCC(=O)O1 OALYTRUKMRCXNH-QMMMGPOBSA-N 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- GJWAEWLHSDGBGG-UHFFFAOYSA-N hexylphosphonic acid Chemical compound CCCCCCP(O)(O)=O GJWAEWLHSDGBGG-UHFFFAOYSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- PQNFLJBBNBOBRQ-UHFFFAOYSA-N indane Chemical compound C1=CC=C2CCCC2=C1 PQNFLJBBNBOBRQ-UHFFFAOYSA-N 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- FQHFBFXXYOQXMN-UHFFFAOYSA-M lithium;quinolin-8-olate Chemical compound [Li+].C1=CN=C2C([O-])=CC=CC2=C1 FQHFBFXXYOQXMN-UHFFFAOYSA-M 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QSSJZLPUHJDYKF-UHFFFAOYSA-N methyl 4-methylbenzoate Chemical compound COC(=O)C1=CC=C(C)C=C1 QSSJZLPUHJDYKF-UHFFFAOYSA-N 0.000 description 2
- 229940095102 methyl benzoate Drugs 0.000 description 2
- OLXYLDUSSBULGU-UHFFFAOYSA-N methyl pyridine-4-carboxylate Chemical compound COC(=O)C1=CC=NC=C1 OLXYLDUSSBULGU-UHFFFAOYSA-N 0.000 description 2
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- NODGRWCMFMEGJH-UHFFFAOYSA-N p-ethylacetophenone Chemical compound CCC1=CC=C(C(C)=O)C=C1 NODGRWCMFMEGJH-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- FGPPDYNPZTUNIU-UHFFFAOYSA-N pentyl pentanoate Chemical compound CCCCCOC(=O)CCCC FGPPDYNPZTUNIU-UHFFFAOYSA-N 0.000 description 2
- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 description 2
- DYUMLJSJISTVPV-UHFFFAOYSA-N phenyl propanoate Chemical compound CCC(=O)OC1=CC=CC=C1 DYUMLJSJISTVPV-UHFFFAOYSA-N 0.000 description 2
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 2
- 125000001918 phosphonic acid ester group Chemical group 0.000 description 2
- 125000002270 phosphoric acid ester group Chemical group 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- KRIOVPPHQSLHCZ-UHFFFAOYSA-N propiophenone Chemical compound CCC(=O)C1=CC=CC=C1 KRIOVPPHQSLHCZ-UHFFFAOYSA-N 0.000 description 2
- 150000003222 pyridines Chemical class 0.000 description 2
- 150000003230 pyrimidines Chemical class 0.000 description 2
- 125000004929 pyrrolidonyl group Chemical group N1(C(CCC1)=O)* 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229940124530 sulfonamide Drugs 0.000 description 2
- 150000003459 sulfonic acid esters Chemical class 0.000 description 2
- YTZKOQUCBOVLHL-UHFFFAOYSA-N tert-butylbenzene Chemical compound CC(C)(C)C1=CC=CC=C1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 description 2
- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical compound CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 description 2
- 125000000101 thioether group Chemical group 0.000 description 2
- URAYPUMNDPQOKB-UHFFFAOYSA-N triacetin Chemical compound CC(=O)OCC(OC(C)=O)COC(C)=O URAYPUMNDPQOKB-UHFFFAOYSA-N 0.000 description 2
- 150000003918 triazines Chemical class 0.000 description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 2
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 2
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 2
- 150000001651 triphenylamine derivatives Chemical class 0.000 description 2
- 125000006617 triphenylamine group Chemical group 0.000 description 2
- XKGLSKVNOSHTAD-UHFFFAOYSA-N valerophenone Chemical compound CCCCC(=O)C1=CC=CC=C1 XKGLSKVNOSHTAD-UHFFFAOYSA-N 0.000 description 2
- WRFZKAGPPQGDDQ-UHFFFAOYSA-N valeryl hexanoate Chemical compound CCCCCOC(=O)CCCCC WRFZKAGPPQGDDQ-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 2
- NMRPBPVERJPACX-UHFFFAOYSA-N (3S)-octan-3-ol Natural products CCCCCC(O)CC NMRPBPVERJPACX-UHFFFAOYSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 description 1
- NKJOXAZJBOMXID-UHFFFAOYSA-N 1,1'-Oxybisoctane Chemical compound CCCCCCCCOCCCCCCCC NKJOXAZJBOMXID-UHFFFAOYSA-N 0.000 description 1
- VYMPLPIFKRHAAC-UHFFFAOYSA-N 1,2-ethanedithiol Chemical compound SCCS VYMPLPIFKRHAAC-UHFFFAOYSA-N 0.000 description 1
- DPZNOMCNRMUKPS-UHFFFAOYSA-N 1,3-Dimethoxybenzene Chemical compound COC1=CC=CC(OC)=C1 DPZNOMCNRMUKPS-UHFFFAOYSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical group C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- UTFRNSPYRPYKDV-UHFFFAOYSA-N 1,3-dipropoxybenzene Chemical compound CCCOC1=CC=CC(OCCC)=C1 UTFRNSPYRPYKDV-UHFFFAOYSA-N 0.000 description 1
- 239000005967 1,4-Dimethylnaphthalene Substances 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- XUKSWKGOQKREON-UHFFFAOYSA-N 1,4-diacetoxybutane Chemical compound CC(=O)OCCCCOC(C)=O XUKSWKGOQKREON-UHFFFAOYSA-N 0.000 description 1
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- KBHWKXNXTURZCD-UHFFFAOYSA-N 1-Methoxy-4-propylbenzene Chemical compound CCCC1=CC=C(OC)C=C1 KBHWKXNXTURZCD-UHFFFAOYSA-N 0.000 description 1
- LBNXAWYDQUGHGX-UHFFFAOYSA-N 1-Phenylheptane Chemical compound CCCCCCCC1=CC=CC=C1 LBNXAWYDQUGHGX-UHFFFAOYSA-N 0.000 description 1
- HYLLZXPMJRMUHH-UHFFFAOYSA-N 1-[2-(2-methoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOC HYLLZXPMJRMUHH-UHFFFAOYSA-N 0.000 description 1
- ZHFLRRPGAVPNMB-UHFFFAOYSA-N 1-[3-(9h-carbazol-1-yl)phenyl]-9h-carbazole Chemical compound C12=CC=CC=C2NC2=C1C=CC=C2C1=CC(C2=C3NC=4C(C3=CC=C2)=CC=CC=4)=CC=C1 ZHFLRRPGAVPNMB-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- UALKQROXOHJHFG-UHFFFAOYSA-N 1-ethoxy-3-methylbenzene Chemical compound CCOC1=CC=CC(C)=C1 UALKQROXOHJHFG-UHFFFAOYSA-N 0.000 description 1
- APWZAIZNWQFZBK-UHFFFAOYSA-N 1-ethoxynaphthalene Chemical compound C1=CC=C2C(OCC)=CC=CC2=C1 APWZAIZNWQFZBK-UHFFFAOYSA-N 0.000 description 1
- HUXKTWJQSHBZIV-UHFFFAOYSA-N 1-ethyl-3-phenylbenzene Chemical group CCC1=CC=CC(C=2C=CC=CC=2)=C1 HUXKTWJQSHBZIV-UHFFFAOYSA-N 0.000 description 1
- ZMXIYERNXPIYFR-UHFFFAOYSA-N 1-ethylnaphthalene Chemical compound C1=CC=C2C(CC)=CC=CC2=C1 ZMXIYERNXPIYFR-UHFFFAOYSA-N 0.000 description 1
- UJEGHEMJVNQWOJ-UHFFFAOYSA-N 1-heptoxyheptane Chemical compound CCCCCCCOCCCCCCC UJEGHEMJVNQWOJ-UHFFFAOYSA-N 0.000 description 1
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- BLMBNEVGYRXFNA-UHFFFAOYSA-N 1-methoxy-2,3-dimethylbenzene Chemical compound COC1=CC=CC(C)=C1C BLMBNEVGYRXFNA-UHFFFAOYSA-N 0.000 description 1
- JCHJBEZBHANKGA-UHFFFAOYSA-N 1-methoxy-3,5-dimethylbenzene Chemical compound COC1=CC(C)=CC(C)=C1 JCHJBEZBHANKGA-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- UDONPJKEOAWFGI-UHFFFAOYSA-N 1-methyl-3-phenoxybenzene Chemical compound CC1=CC=CC(OC=2C=CC=CC=2)=C1 UDONPJKEOAWFGI-UHFFFAOYSA-N 0.000 description 1
- JOZDADPMWLVEJK-UHFFFAOYSA-N 1-pentylsulfanylpentane Chemical compound CCCCCSCCCCC JOZDADPMWLVEJK-UHFFFAOYSA-N 0.000 description 1
- HKTCLPBBJDIBGF-UHFFFAOYSA-N 1-phenyl-2-propan-2-ylbenzene Chemical group CC(C)C1=CC=CC=C1C1=CC=CC=C1 HKTCLPBBJDIBGF-UHFFFAOYSA-N 0.000 description 1
- MVWPVABZQQJTPL-UHFFFAOYSA-N 2,3-diphenylcyclohexa-2,5-diene-1,4-dione Chemical class O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MVWPVABZQQJTPL-UHFFFAOYSA-N 0.000 description 1
- UOCMXZLNHQBBOS-UHFFFAOYSA-N 2-(1,3-benzoxazol-2-yl)phenol zinc Chemical compound [Zn].Oc1ccccc1-c1nc2ccccc2o1.Oc1ccccc1-c1nc2ccccc2o1 UOCMXZLNHQBBOS-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- IZJOTDOLRQTPHC-UHFFFAOYSA-N 2-(4-carbazol-9-ylphenyl)-5-phenyl-1,3,4-oxadiazole Chemical compound C1=CC=CC=C1C1=NN=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)O1 IZJOTDOLRQTPHC-UHFFFAOYSA-N 0.000 description 1
- GUMOJENFFHZAFP-UHFFFAOYSA-N 2-Ethoxynaphthalene Chemical compound C1=CC=CC2=CC(OCC)=CC=C21 GUMOJENFFHZAFP-UHFFFAOYSA-N 0.000 description 1
- WOFPPJOZXUTRAU-UHFFFAOYSA-N 2-Ethyl-1-hexanol Natural products CCCCC(O)CCC WOFPPJOZXUTRAU-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- NBYLBWHHTUWMER-UHFFFAOYSA-N 2-Methylquinolin-8-ol Chemical compound C1=CC=C(O)C2=NC(C)=CC=C21 NBYLBWHHTUWMER-UHFFFAOYSA-N 0.000 description 1
- RJBIZCOYFBKBIM-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]propane Chemical compound COCCOCCOC(C)C RJBIZCOYFBKBIM-UHFFFAOYSA-N 0.000 description 1
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 1
- APWRLAZEMYLHKZ-UHFFFAOYSA-N 2-amino-5,6-dimethyl-1h-pyrimidin-4-one Chemical compound CC=1NC(N)=NC(=O)C=1C APWRLAZEMYLHKZ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 1
- NYHNVHGFPZAZGA-UHFFFAOYSA-N 2-hydroxyhexanoic acid Chemical compound CCCCC(O)C(O)=O NYHNVHGFPZAZGA-UHFFFAOYSA-N 0.000 description 1
- GFNZJAUVJCGWLW-UHFFFAOYSA-N 2-methoxy-1,3-dimethylbenzene Chemical compound COC1=C(C)C=CC=C1C GFNZJAUVJCGWLW-UHFFFAOYSA-N 0.000 description 1
- SJZAUIVYZWPNAS-UHFFFAOYSA-N 2-methoxy-1,4-dimethylbenzene Chemical compound COC1=CC(C)=CC=C1C SJZAUIVYZWPNAS-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- UPSWHSOSMRAWEH-UHFFFAOYSA-N 2-n,3-n,4-n-tris(3-methylphenyl)-1-n,1-n,2-n,3-n,4-n-pentakis-phenylbenzene-1,2,3,4-tetramine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=C(N(C=3C=CC=CC=3)C=3C=C(C)C=CC=3)C(N(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 UPSWHSOSMRAWEH-UHFFFAOYSA-N 0.000 description 1
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical class CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 1
- YFLAJEAQOBRXIK-UHFFFAOYSA-N 2-prop-2-enoyloxyethylphosphonic acid Chemical compound OP(O)(=O)CCOC(=O)C=C YFLAJEAQOBRXIK-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- XVSZRAWFCDHCBP-UHFFFAOYSA-N 3-methylbutyl hexanoate Chemical compound CCCCCC(=O)OCCC(C)C XVSZRAWFCDHCBP-UHFFFAOYSA-N 0.000 description 1
- WNYWRRLHDUIGOL-UHFFFAOYSA-N 3-prop-2-enoyloxypropylphosphonic acid Chemical compound OP(O)(=O)CCCOC(=O)C=C WNYWRRLHDUIGOL-UHFFFAOYSA-N 0.000 description 1
- 229940077398 4-methyl anisole Drugs 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- WKAHKYDYDUMBRW-UHFFFAOYSA-N 5,11-diphenylindolo[3,2-b]carbazole Chemical compound C1=CC=CC=C1N1C2=CC(C3=CC=CC=C3N3C=4C=CC=CC=4)=C3C=C2C2=CC=CC=C21 WKAHKYDYDUMBRW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- LQJUGOVRUNSBJE-UHFFFAOYSA-N C1=CC=C(C=C1)C1=NC(=NC(=C1)N1C2=C(C=CC=C2)C2=C1C=CC=C2)C1=CC=CC=C1 Chemical compound C1=CC=C(C=C1)C1=NC(=NC(=C1)N1C2=C(C=CC=C2)C2=C1C=CC=C2)C1=CC=CC=C1 LQJUGOVRUNSBJE-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- YFPJFKYCVYXDJK-UHFFFAOYSA-N Diphenylphosphine oxide Chemical compound C=1C=CC=CC=1[P+](=O)C1=CC=CC=C1 YFPJFKYCVYXDJK-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241000764773 Inna Species 0.000 description 1
- 229910000799 K alloy Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- GOZPTOHMTKTIQP-UHFFFAOYSA-N OC1=CC=CC2=CC=C3C=CC(=NC3=C21)C(=O)O Chemical compound OC1=CC=CC2=CC=C3C=CC(=NC3=C21)C(=O)O GOZPTOHMTKTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical class C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- IPBVNPXQWQGGJP-UHFFFAOYSA-N acetic acid phenyl ester Natural products CC(=O)OC1=CC=CC=C1 IPBVNPXQWQGGJP-UHFFFAOYSA-N 0.000 description 1
- BYUMYPPGJBLEIS-UHFFFAOYSA-N acetic acid;propane-1,2,3-triol Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.OCC(O)CO BYUMYPPGJBLEIS-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910001508 alkali metal halide Inorganic materials 0.000 description 1
- 150000008045 alkali metal halides Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- VZSNNUDOANMGNX-UHFFFAOYSA-K aluminum;4-phenylphenolate Chemical compound [Al+3].C1=CC([O-])=CC=C1C1=CC=CC=C1.C1=CC([O-])=CC=C1C1=CC=CC=C1.C1=CC([O-])=CC=C1C1=CC=CC=C1 VZSNNUDOANMGNX-UHFFFAOYSA-K 0.000 description 1
- GONYPVVHIATNEG-UHFFFAOYSA-K aluminum;quinoline-8-carboxylate Chemical compound [Al+3].C1=CN=C2C(C(=O)[O-])=CC=CC2=C1.C1=CN=C2C(C(=O)[O-])=CC=CC2=C1.C1=CN=C2C(C(=O)[O-])=CC=CC2=C1 GONYPVVHIATNEG-UHFFFAOYSA-K 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 150000001448 anilines Chemical class 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 229940027991 antiseptic and disinfectant quinoline derivative Drugs 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical group C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- ZADPBFCGQRWHPN-UHFFFAOYSA-N boronic acid Chemical compound OBO ZADPBFCGQRWHPN-UHFFFAOYSA-N 0.000 description 1
- YFNONBGXNFCTMM-UHFFFAOYSA-N butoxybenzene Chemical compound CCCCOC1=CC=CC=C1 YFNONBGXNFCTMM-UHFFFAOYSA-N 0.000 description 1
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- CGZZMOTZOONQIA-UHFFFAOYSA-N cycloheptanone Chemical compound O=C1CCCCCC1 CGZZMOTZOONQIA-UHFFFAOYSA-N 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- VTXVGVNLYGSIAR-UHFFFAOYSA-N decane-1-thiol Chemical compound CCCCCCCCCCS VTXVGVNLYGSIAR-UHFFFAOYSA-N 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- UBPGILLNMDGSDS-UHFFFAOYSA-N diethylene glycol diacetate Chemical compound CC(=O)OCCOCCOC(C)=O UBPGILLNMDGSDS-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- UYAAVKFHBMJOJZ-UHFFFAOYSA-N diimidazo[1,3-b:1',3'-e]pyrazine-5,10-dione Chemical compound O=C1C2=CN=CN2C(=O)C2=CN=CN12 UYAAVKFHBMJOJZ-UHFFFAOYSA-N 0.000 description 1
- HBGGXOJOCNVPFY-UHFFFAOYSA-N diisononyl phthalate Chemical class CC(C)CCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCC(C)C HBGGXOJOCNVPFY-UHFFFAOYSA-N 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229920000775 emeraldine polymer Polymers 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- MQIGTIFMSSGUBS-UHFFFAOYSA-N ethenylphosphinic acid Chemical compound OP(=O)C=C MQIGTIFMSSGUBS-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- LYRIITRHDCNUHV-UHFFFAOYSA-N ethyl 3-hydroxyhexanoate Chemical compound CCCC(O)CC(=O)OCC LYRIITRHDCNUHV-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940093476 ethylene glycol Drugs 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000013773 glyceryl triacetate Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical group OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- LIXVMPBOGDCSRM-UHFFFAOYSA-N nonylbenzene Chemical compound CCCCCCCCCC1=CC=CC=C1 LIXVMPBOGDCSRM-UHFFFAOYSA-N 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
- VXNSQGRKHCZUSU-UHFFFAOYSA-N octylbenzene Chemical compound [CH2]CCCCCCCC1=CC=CC=C1 VXNSQGRKHCZUSU-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229940049953 phenylacetate Drugs 0.000 description 1
- WLJVXDMOQOGPHL-UHFFFAOYSA-N phenylacetic acid Chemical compound OC(=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000001296 phosphorescence spectrum Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- DSNYFFJTZPIKFZ-UHFFFAOYSA-N propoxybenzene Chemical compound CCCOC1=CC=CC=C1 DSNYFFJTZPIKFZ-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 229960004063 propylene glycol Drugs 0.000 description 1
- 229940116423 propylene glycol diacetate Drugs 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 150000003252 quinoxalines Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000002130 sulfonic acid ester group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000005329 tetralinyl group Chemical group C1(CCCC2=CC=CC=C12)* 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229960002622 triacetin Drugs 0.000 description 1
- 125000004306 triazinyl group Chemical group 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- XSVXWCZFSFKRDO-UHFFFAOYSA-N triphenyl-(3-triphenylsilylphenyl)silane Chemical compound C1=CC=CC=C1[Si](C=1C=C(C=CC=1)[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 XSVXWCZFSFKRDO-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- ABDKAPXRBAPSQN-UHFFFAOYSA-N veratrole Chemical compound COC1=CC=CC=C1OC ABDKAPXRBAPSQN-UHFFFAOYSA-N 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/20—Delayed fluorescence emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/361—Temperature
Definitions
- the present invention relates to a method of forming a light emitting layer and a method of manufacturing a light emitting device.
- Devices utilizing electroluminescence are widely used as light sources for various display devices and the like.
- a light emitting element using a semiconductor nanocrystal having a light emitting property such as a quantum dot or a quantum rod as a light emitting material has attracted attention.
- the light emission obtained from the semiconductor nanocrystal has a smaller spectrum width and a wider color gamut than the organic EL element, and thus is excellent in color reproducibility.
- the light emitting layer of this light emitting element apply
- the coating film is dried at two stages of reduced pressure by using a dry pump and a turbo molecular pump.
- the time for drying the coating film at a relatively low degree of reduced pressure by the dry pump is too short.
- the dispersion medium is rapidly removed from the coating film by high pressure reduction by the turbo molecular pump, and the smoothness is impaired. Therefore, the semiconductor nanocrystals aggregate in the coating film, and a light emitting layer (light emitting element) having sufficient light emitting characteristics can not be obtained.
- An object of the present invention is to provide a light emitting layer excellent in light emitting characteristics and a method of manufacturing a light emitting element.
- Such an object is achieved by the present invention of the following (1) to (6).
- (1) Prepare an ink containing semiconductor nanocrystals having light-emitting properties, particles composed of a dispersant supported by the semiconductor nanocrystals, and a dispersion medium having a boiling point of 200 ° C. or higher at atmospheric pressure.
- Process Supplying the ink to a support to form a coating on the support;
- the support on which the coating is formed is housed in a chamber, the pressure in the chamber is reduced to a first pressure of 1 to 500 Pa, and the coating is held at the first pressure for 2 minutes or more, Removing the dispersion medium from Decompressing the inside of the chamber to a second pressure lower than the first pressure and maintaining the second pressure at a predetermined time for further removing the dispersion medium from the coating film.
- (6) forming a light emitting layer by the method for forming a light emitting layer according to any one of (1) to (5) above; Forming an anode or a cathode before or after the step of forming the light emitting layer.
- the ink used in the present invention contains particles composed of semiconductor nanocrystals having a light-emitting property, a dispersant supported by the semiconductor nanocrystals, and a dispersion medium for dispersing the particles.
- the ink may contain, for example, a charge transport material, a surfactant, and the like, as necessary.
- the particles are composed of semiconductor nanocrystals and a dispersant supported by the semiconductor nanocrystals.
- Semiconductor nanocrystals (hereinafter, sometimes simply referred to as “nanocrystals”) are nanosized crystals (nanocrystal particles) that absorb excitation light and emit fluorescence or phosphorescence, and, for example, transmission type electrons It is a crystalline form having a maximum particle diameter of 100 nm or less measured by a microscope or a scanning electron microscope.
- the nanocrystals can be excited, for example, by light energy or electrical energy of a predetermined wavelength to emit fluorescence or phosphorescence.
- the nanocrystal may be a red light emitting crystal that emits light (red light) having an emission peak in the wavelength range of 605 to 665 nm, and emits light (green light) having an emission peak in the wavelength range of 500 to 560 nm It may be a green light emitting crystal, or may be a blue light emitting crystal which emits light (blue light) having an emission peak in the wavelength range of 420 to 480 nm. Also, in one embodiment, the ink preferably contains at least one of these nanocrystals. Note that the wavelength of the emission peak of the nanocrystal can be confirmed, for example, in a fluorescence spectrum or a phosphorescence spectrum measured using an ultraviolet-visible spectrophotometer.
- Red light emitting nanocrystals have a wavelength of 665 nm or less, 663 nm or less, 660 nm or less, 658 nm or less, 653 nm or less, 651 nm or less, 650 nm or less, 647 nm or less, 645 nm or less, 643 nm or less, 640 nm or less, 637 nm or less, It is preferable to have an emission peak in a wavelength range of 632 nm or less or 630 nm or less, and have an emission peak in a wavelength range of 628 nm or more, 625 nm or more, 623 nm or more, 620 nm or more, 615 nm or more, 610 nm or more, 607 nm or more, or 605 nm or more preferable.
- These upper and lower limit values can be arbitrarily combined. Also in the following similar descriptions, the upper limit value and the lower limit value individually described can be
- Green light-emitting nanocrystals have emission peaks in the wavelength range of 560 nm or less, 557 nm or less, 555 nm or less, 547 nm or less, 545 nm or less, 543 nm or less, 537 nm or less, 535 nm or less, 532 nm or less It is preferable to have an emission peak in a wavelength range of 528 nm or more, 525 nm or more, 523 nm or more, 520 nm or more, 515 nm or more, 510 nm or more, 507 nm or more, 505 nm or more, 503 nm or more, or 500 nm or more.
- Blue light-emitting nanocrystals have emission peaks in the wavelength range of 480 nm or less, 477 nm or less, 475 nm or less, 470 nm or less, 467 nm or less, 463 nm or less, 460 nm or less, 457 nm or less, 455 nm or less It is preferable to have an emission peak in a wavelength range of 450 nm or more, 445 nm or more, 440 nm or more, 435 nm or more, 430 nm or more, 428 nm or more, 425 nm or more, 422 nm or more, or 420 nm or more.
- the wavelength (emission color) of light emitted by the nanocrystals depends on the size (for example, particle diameter) of the nanocrystals according to the solution of the Schrodinger wave equation of the well potential model, but the energy gap of the nanocrystals is also Dependent. Therefore, the emission color of the nanocrystal can be selected (adjusted) by changing the constituent material and the size.
- the nanocrystals may be formed of a semiconductor material and can have various structures.
- the nanocrystal may be composed only of the core composed of the first semiconductor material, and the core composed of the first semiconductor material and at least a part of the core are covered with the first semiconductor It may be configured to have a material and a shell composed of a second semiconductor material different from the material.
- the nanocrystal structure may be a structure consisting only of the core (core structure) or a structure consisting of the core and the shell (core / shell structure).
- the nanocrystal covers at least a part of the shell and is a third semiconductor different from the first and second semiconductor materials. It may further have a shell (second shell) composed of a material.
- the structure of the nanocrystals may be a structure (core / shell / shell structure) composed of the core, the first shell and the second shell.
- each of the core and the shell may be composed of a mixed crystal (for example, CdSe + CdS, CIS + ZnS, etc.) containing two or more semiconductor materials.
- the nanocrystal is at least one semiconductor material selected from the group consisting of II-VI semiconductors, III-V semiconductors, I-III-VI semiconductors, IV semiconductors and I-II-IV-VI semiconductors. It is preferable to be composed of
- Specific semiconductor materials include, for example, CdS, CdSe, CdTe, ZnS, ZnTe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, CdSTe, ZnSeTe, ZnSeTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgSe, CdHgSe, CdHgTe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSeCs, CdZnSe: CdHg
- Semiconductor materials CdS, CdSe, CdTe, ZnS , ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, InP, InAs, InSb, GaP, GaAs, GaSb, AgInS 2, AgInSe 2, AgInTe 2, AgGaS 2, AgGaSe 2 It is preferable that at least one selected from the group consisting of AgGaTe 2 , CuInS 2 , CuInSe 2 , CuInTe 2 , CuGaS 2 , CuGaS 2 , CuGaSe 2 , CuGaTe 2 , Si, C, Ge, and Cu 2 ZnSnS 4 .
- the nanocrystals composed of these semiconductor materials can easily control the emission spectrum, can reduce the production cost and improve the mass productivity while securing the reliability.
- red light emitting nanocrystals include nanocrystals of CdSe; rod-like nanocrystals of CdSe; rod-like nanocrystals including a shell of CdS and a core of CdSe; a shell of CdS and a core of ZnSe Rod-like nanocrystals; nanocrystals with CdS shell and CdSe core; nanocrystals with CdS shell and ZnSe core; nanocrystals with ZnS shell and InP core; ZnS shell and CdSe Nanocrystals with a core of CdSe: ZnS mixed crystal nanocrystals; CdSe ZnS mixed crystal rodlike nanocrystals; InP nanocrystals; InP rodlike nanocrystals; CdSe and CdS and Mixed crystal nanocrystals; rod-like nanocrystals of mixed crystals of CdSe and CdS; nanocrystals of mixed crystals of
- green light emitting nanocrystals include nanocrystals of CdSe; rod-like nanocrystals of CdSe; nanocrystals including a shell of ZnS and a core of InP; nanocrystals including a shell of ZnS and a core of CdSe; Nanocrystals of mixed crystals of CdSe and ZnS; rod-like nanocrystals of mixed crystals of CdSe and ZnS, and the like can be mentioned.
- blue light emitting nanocrystals include nanocrystals of ZnSe; rod-like nanocrystals of ZnSe; nanocrystals of ZnS; rod-like nanocrystals of ZnS; nanocrystal comprising a shell of ZnSe and a core of ZnS; A rod-like nanocrystal provided with a shell of ZnSe and a core of ZnS; a nanocrystal of CdS; a rod-like nanocrystal of CdS, and the like.
- nanocrystals are the same chemical composition, the color which should be light-emitted from a nanocrystal can be changed into red or green by designing the average particle diameter of itself.
- the nanocrystals themselves have minimal adverse effects on the human body and the like. Therefore, if the nanocrystals containing as little as possible cadmium, selenium, etc. are selected and used alone or if the nanocrystals containing the above elements (cadmium, selenium etc.) are used, the above elements can be reduced as much as possible. It is preferable to use in combination with the nanocrystals of
- the shape of the nanocrystal is not particularly limited, and may be any geometric shape or any irregular shape.
- Examples of the shape of the nanocrystal include a sphere, a tetrahedron, an ellipsoid, a pyramid, a disc, a branch, a net, and a rod.
- a shape with less directionality for example, spherical shape, tetrahedral shape, etc.
- the uniformity and flowability of the ink can be further enhanced by using the nanocrystals of such shape.
- the average particle diameter (volume average diameter) of the nanocrystals is preferably 40 nm or less, more preferably 30 nm or less, and still more preferably 20 nm or less. Nanocrystals having such an average particle size are preferable because they easily emit light of a desired wavelength.
- the average particle diameter (volume average diameter) of the nanocrystals is preferably 1 nm or more, more preferably 1.5 nm or more, and still more preferably 2 nm or more.
- the nanocrystals having such an average particle size are preferable not only because they easily emit light of a desired wavelength, but also because they can improve the dispersibility in ink and storage stability.
- the average particle diameter (volume average diameter) of a nanocrystal is measured by a transmission electron microscope or a scanning electron microscope, and is obtained by computing a volume average diameter.
- nanocrystals have high reactivity because they have surface atoms that can be coordination sites. Nanocrystals are prone to aggregation due to such high reactivity and large surface area as compared to common pigments. Nanocrystals produce luminescence due to quantum size effects. Therefore, when nanocrystals aggregate, a quenching phenomenon occurs, leading to a decrease in fluorescence quantum yield, and a decrease in luminance and color reproducibility. That is, the ink formed by dispersing the nanocrystals in the dispersion medium as in the present invention is likely to cause deterioration of the light emission characteristics due to aggregation unlike the ink formed by dissolving the organic light emitting material in the solvent. For this reason, in the ink of the present invention, preparation from the viewpoint of securing dispersion stability of nanocrystals is important.
- a dispersant (organic ligand) compatible with the dispersion medium is supported (held) on the surface of the nanocrystal, in other words, the surface of the nanocrystal is inactive due to the dispersant. It has been The presence of the dispersant can improve the dispersion stability of the nanocrystals in the ink.
- the dispersant is supported on the surface of the nanocrystal by, for example, covalent bond, coordinate bond, ionic bond, hydrogen bond, van der Waals bond, or the like.
- the term "supported” is a general term for the state in which the dispersing agent is adsorbed, attached or bonded to the surface of the nanocrystal.
- the dispersing agent can be detached from the surface of the nanocrystal, and the support by the nanocrystal and the detachment from the nanocrystal are in an equilibrium state, and these can be repeated.
- the dispersant is not particularly limited as long as it is a compound that can improve the dispersion stability of the nanocrystals in the ink.
- Dispersants are classified into low molecular weight dispersants and high molecular weight dispersants.
- low molecular weight means a molecule having a weight average molecular weight (Mw) of 5,000 or less
- polymer means a molecule having a weight average molecular weight (Mw) of more than 5,000.
- Weight average molecular weight (Mw)” is a value measured using gel permeation chromatography (GPC) using polystyrene as a standard substance.
- low molecular weight dispersants include oleic acid; triethyl phosphate, TOP (trioctyl phosphine), TOPO (trioctyl phosphine oxide), hexyl phosphonic acid (HPA), tetradecyl phosphonic acid (TDPA), octyl phosphine Phosphorus atom-containing compounds such as acid (OPA); nitrogen atom-containing compounds such as oleylamine, octylamine, trioctylamine and hexadecylamine; sulfur atoms such as 1-decanethiol, octanethiol, dodecanethiol and amyl sulfide Containing compounds etc. are mentioned.
- a polymer compound having a functional group that can be supported on the surface of nanocrystals can be used.
- functional groups primary amino group, secondary amino group, tertiary amino group, phosphoric acid group, phosphoric acid ester group, phosphonic acid group, phosphonic acid ester group, phosphinic acid group, phosphinic acid ester group, Thiol group, thioether group, sulfonic acid group, sulfonic acid ester group, carboxylic acid group, carboxylic acid ester group, hydroxyl group, ether group, imidazolyl group, triazinyl group, pyrrolidonyl group, isocyanuric acid group, boric acid ester group, boronic acid And the like.
- a primary amino group, a secondary amino group, a tertiary amino group, a carboxylic acid ester group from the viewpoint of easy synthesis of a polymer compound having a plurality of functional groups combined to enhance the ability to support nanocrystals.
- a phosphoric acid group, a phosphoric acid ester group, a phosphonic acid group, a phosphonic acid ester group, and a carboxylic acid group are preferable in that the hydroxyl group and the ether group have sufficient ability to support nanocrystals even if they are singly.
- primary amino group, secondary amino group, tertiary amino group, phosphoric acid group, phosphonic acid group, and carboxylic acid group are more preferable in that they have high ability to support nanocrystals appropriately in the ink.
- polymer dispersant having a primary amino group examples include linear amines such as polyalkylene glycol amines, polyester amines, urethane-modified polyester amines, polyalkylene glycol diamines, polyester diamines, urethane-modified polyester diamines, A comb-type polyamine having an amino group in the side chain of the acrylic polymer) may, for example, be mentioned.
- a polymer dispersant having a secondary amino group for example, a comb type having a main chain including a linear polyethyleneimine skeleton having a large number of secondary amino groups, and a side chain of polyester, acrylic resin, polyurethane or the like Block copolymers and the like can be mentioned.
- polymer dispersant having a tertiary amino group examples include star-shaped amines such as tri (polyalkylene glycol) amines, and the like.
- polymer dispersants having a primary amino group for example, JP-A 2008-037884, JP-A 2008-037949, and JP-A 2008-03818.
- polymer dispersant having a phosphoric acid group for example, polyalkylene glycol monophosphate ester, polyalkylene glycol monoalkyl ether monophosphate ester, perfluoroalkyl polyoxyalkylene phosphate ester, perfluoroalkyl sulfonamide polyoxyalkylene phosphorus Homopolymers obtained from monomers such as acid esters, acid phosphoxyethyl mono (meth) acrylates, acid phosphoxy propyl mono (meth) acrylates, acid phosphoxy polyoxyalkylene glycol mono (meth) acrylates, or these monomers and other monomers Copolymers obtained from comonomers and (meth) acrylic polymers having a phosphoric acid group obtained by the method described in Japanese Patent No. 4697356.
- the polymer dispersant having a phosphoric acid group can also be adjusted in pH by forming a salt by reacting an alkali metal hydroxide or an alkaline earth metal
- polymer dispersant having a phosphonic acid group for example, polyalkylene glycol monoalkyl phosphonate, polyalkylene glycol monoalkyl ether monoalkyl phosphonate, perfluoroalkyl polyoxyalkylene alkyl phosphonate, perfluoroalkyl sulfone Amide polyoxyalkylene alkyl phosphonates, polyethylene phosphonic acid; monomers such as vinyl phosphonic acid, (meth) acryloyl oxyethyl phosphonic acid, (meth) acryloyl oxy propyl phosphonic acid, (meth) acryloyl oxy polyoxy alkylene glycol phosphonic acid And homopolymers obtained from the monomers and copolymers obtained from the monomers and other comonomers.
- the polymer dispersant having a phosphonic acid group can also be adjusted in pH by forming a salt by reacting an alkali metal hydroxide or an alkaline earth metal hydroxide
- polymer dispersant having a phosphinic acid group for example, polyalkylene glycol dialkyl phosphinate ester, perfluoroalkyl polyoxyalkylene dialkyl phosphinate ester, perfluoroalkyl sulfonamide polyoxyalkylene dialkyl phosphinate ester, polyethylene phosphinic acid; Homopolymers obtained from monomers such as vinylphosphinic acid, (meth) acryloyloxydialkylphosphinic acid, (meth) acryloyloxypolyoxyalkylene glycol dialkylphosphinic acids or copolymers obtained from this monomer and other comonomers .
- the polymer dispersant having a phosphinic acid group can also be adjusted in pH by forming a salt by reacting an alkali metal hydroxide or an alkaline earth metal hydroxide.
- polymer dispersant having a thiol group examples include polyvinyl thiol, polyalkylene glycol ethylene thiol and the like.
- polymer dispersant having a thioether group examples include polyalkylene glycol thioethers obtained by reacting mercaptopropionic acid and glycidyl-modified polyalkylene glycol described in JP-A-2013-60637.
- polymer dispersant having a sulfonic acid group for example, polyalkylene glycol monoalkyl sulfonic acid ester, polyalkylene glycol monoalkyl ether monoalkyl sulfonic acid ester, perfluoroalkyl polyoxyalkylene alkyl sulfonic acid ester, perfluoroalkyl sulfone Amide polyoxyalkylene alkyl sulfonic acid ester, polyethylene sulfonic acid; homopolymer obtained from monomers such as vinyl sulfonic acid, (meth) acryloyloxy alkyl sulfonic acid, (meth) acryloyloxy polyoxy alkylene glycol sulfonic acid, polystyrene sulfonic acid Or the copolymer etc.
- the polymer dispersant having a sulfonic acid group can also be adjusted in pH by forming a salt by reacting an alkali metal hydroxide or an alkaline earth metal hydroxide.
- polymer dispersant having a carboxylic acid group for example, polyalkylene glycol carboxylic acid, perfluoroalkyl polyoxyalkylene carboxylic acid, polyethylene carboxylic acid, polyester monocarboxylic acid, polyester dicarboxylic acid, urethane modified polyester monocarboxylic acid, urethane Homopolymers obtained from monomers such as modified polyester dicarboxylic acids; vinyl carboxylic acids, (meth) acryloyloxyalkyl carboxylic acids, (meth) acryloyloxy polyoxyalkylene glycol carboxylic acids or copolymers obtained from this monomer and other comonomers Etc.
- the polymer dispersant having a carboxylic acid group can also be adjusted in pH by forming a salt by reacting an alkali metal hydroxide or an alkaline earth metal hydroxide.
- the polymer dispersant having an ester group can be obtained, for example, by dehydration condensation of a monoalkyl alcohol to the polymer dispersant having a carboxylic acid group.
- Examples of the polymer dispersant having a pyrrolidonyl group include polyvinyl pyrrolidone and the like.
- the polymer dispersant having a specific functional group may be a synthetic product or a commercially available product.
- a commercial item for example, DISPERBYK-102, DISPERBYK-103, DISPERBYK-108, DISPERBYK-109, DISPERBYK-110, DISPERBYK-110, DISPERBYK-111, DISPERBYK-118, DISPERBYK-118, DISPERBYK-140, DISPERBYK-140 included in the DISPERBYK series manufactured by Bick Chemie Ltd.
- FLORENE flow Len series
- FLOWLEN DOPA-15BHF Flowlen DOPA-33
- Flowlen DOPA-44 include Flowlen DOPA-44, and the like.
- One of these polymer dispersants may be used alone, or two or more thereof may be used in combination.
- the dispersant as described above may be supported in a state in which almost the whole molecule is in contact with the nanocrystal, or may be supported in a state in which only a part of the molecule is in contact with the nanocrystal. In any state, the dispersant suitably exerts a dispersing function to disperse the nanocrystals stably in the dispersion medium.
- the weight average molecular weight (Mw) of the dispersant is preferably 50,000 or less, and more preferably about 100 to 50,000.
- Mw weight average molecular weight
- the mass of the compound which is not a polymer among low molecular weight dispersing agents it replaces with a "weight average molecular weight" and uses "molecular weight.”
- a dispersant having a weight average molecular weight equal to or more than the lower limit is excellent in the ability to support nanocrystals, and therefore, the dispersion stability of the nanocrystals in the ink can be sufficiently ensured.
- a dispersant having a weight average molecular weight equal to or less than the above upper limit has a sufficient number of functional groups per unit weight and does not become too high in crystallinity, so that the dispersion stability of nanocrystals in the ink can be enhanced. it can.
- the weight average molecular weight of the dispersant is not too high, the inhibition of charge transfer in the obtained light emitting layer can be prevented or suppressed.
- the amount of the dispersant (in particular, the polymer dispersant) relative to the nanocrystals is preferably 50% by mass or less relative to 100% by mass of the nanocrystals.
- the amount of the dispersant with respect to nanocrystals is preferably 1% by mass or more, more preferably 3% by mass or more, and still more preferably 5% by mass or more with respect to 100% by mass of nanocrystals. . Thereby, sufficient dispersion stability of the nanocrystals in the ink can be maintained.
- the charge transport material usually has a function of transporting holes and electrons injected into the light emitting layer.
- the charge transport material is not particularly limited as long as it has a function of transporting holes and electrons.
- Charge transport materials are classified into polymeric charge transport materials and low molecular charge transport materials.
- the polymer charge transport material is not particularly limited, and examples thereof include vinyl polymers such as poly (9-vinylcarbazole) (PVK); poly [N, N′-bis (4-butylphenyl) -N, N '-Bis (phenyl) -benzidine] (poly-TPA), polyfluorene (PF), poly [N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) -benzidine (Poly- TPD), poly [(9,9-dioctylfluorenyl-2,7-diyl) -co- (4,4 '-(N-(-sec-butylphenyl) diphenylamine)] (TFB), polyphenylene vinylene ( Conjugated compound polymers such as PPV), copolymers containing these monomer units, and the like can be mentioned.
- PVK poly (9-vinylcarbazole)
- PVK poly [N,
- the low molecular charge transport material is not particularly limited.
- CBP 4,4′-bis (9H-carbazol-9-yl) biphenyl
- CBP 9,9 ′-(p-tert-butylphenyl) -3 , 3-Biscarbazole, 1,3-dicarbazolylbenzene (mCP), 4,4'-bis (9-carbazolyl) -2,2'-dimethylbiphenyl (CDBP), N, N'-dicarbazolyl-1
- Carbazole derivatives such as 2,4-dimethylbenzene (DCB), 5,11-diphenyl-5,11-dihydroindolo [3,2-b] carbazole; bis (2-methyl-8-quinolinolate) -4- Aluminum complexes such as (phenylphenolato) aluminum (BAlq), 2,7-bis (diphenylphosphine oxide) -9,9-dimethylfluorene ( Phosphine oxide derivatives such as P06
- surfactant for example, one or more of a fluorine-based surfactant, a silicone-based surfactant, a hydrocarbon-based surfactant and the like can be used in combination. Among these, silicone surfactants and / or hydrocarbon surfactants are preferable because they are difficult to trap charges.
- silicone surfactant and the hydrocarbon surfactant low molecular weight or high molecular weight surfactants can be used. Specific examples thereof include, for example, BYK series manufactured by Big Chemie Co., Ltd., and Surfynol manufactured by Nisshin Chemical Industry Co., Ltd. Among these, since a coating film having high smoothness can be obtained when the ink is applied, a silicone-based surfactant made of organically modified siloxane can be suitably used.
- Dispersion medium Particles of nanocrystals carrying such a dispersing agent are dispersed in a dispersion medium.
- the dispersion medium is not particularly limited, and examples thereof include aromatic hydrocarbon compounds, aromatic ester compounds, aromatic ether compounds, aromatic ketone compounds, aliphatic hydrocarbon compounds, aliphatic ester compounds, aliphatic ether compounds, and fats. Group ketone compounds, alcohol compounds, amide compounds, other compounds, etc. may be mentioned, and one or more of these may be used in combination.
- aromatic hydrocarbon compound As an aromatic hydrocarbon compound, toluene, xylene, ethylbenzene, cumene, mesitylene, tert-butylbenzene, indane, diethylbenzene, pentylbenzene, 1,2,3,4-tetrahydronaphthalene, naphthalene, hexylbenzene, heptylbenzene, cyclohexyl Examples thereof include benzene, 1-methylnaphthalene, biphenyl, 2-ethylnaphthalene, 1-ethylnaphthalene, octylbenzene, diphenylmethane, 1,4-dimethylnaphthalene, nonylbenzene, isopropylbiphenyl, 3-ethylbiphenyl, dodecylbenzene and the like.
- aromatic ester compound phenyl acetate, methyl benzoate, ethyl benzoate, phenyl propionate, isopropyl benzoate, methyl 4-methylbenzoate, propyl benzoate, butyl benzoate, isopentyl benzoate, ethyl p-anisate, Dimethyl phthalate etc. are mentioned.
- aromatic ether compounds dimethoxybenzene, methoxytoluene, ethylphenyl ether, dibenzyl ether, 4-methylanisole, 2,6-dimethylanisole, ethylphenyl ether, propylphenylether, 2,5-dimethylanisole, 3, 5-dimethylanisole, 4-ethylanisole, 2,3-dimethylanisole, butylphenylether, p-dimethoxybenzene, p-propylanisole, m-dimethoxybenzene, methyl 2-methoxybenzoate, 1,3-dipropoxybenzene Diphenyl ether, 1-methoxynaphthalene, 3-phenoxytoluene, 2-ethoxynaphthalene, 1-ethoxynaphthalene and the like.
- aromatic ketone compound examples include acetophenone, propiophenone, 4′-methylacetophenone, 4′-ethylacetophenone, butylphenyl ketone and the like.
- aliphatic hydrocarbon compounds include pentane, hexane, octane and cyclohexane.
- aliphatic ester compounds include ethyl acetate, butyl acetate, ethyl lactate, hexyl acetate, butyl lactate, isoamyl lactate, amyl valerate, ethyl levrilate, ⁇ -valerolactone, ethyl octanoate, ⁇ -hexalactone, isoamyl hexahydrate , Amyl hexanate, nonyl acetate, methyl decanoate, diethyl glutarate, ⁇ -heptalactone, ⁇ -caprolactone, octalactone, propylene carbonate, ⁇ -nonanolactone, hexyl hexanoate, diisopropyl adipate, ⁇ -nonanolactone, glycerol tri Acetic acid, ⁇ -decanolactone, dipropyl adipate, ⁇ -undecal
- aliphatic ether compounds include tetrahydrofuran, dioxane, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol isopropyl methyl ether, diethylene glycol diethyl ether, diethylene glycol diethyl methyl ether, diethylene glycol butyl methyl ether, dihexyl ether, diethylene glycol dibutyl ether, diheptyl ether, dioctyl ether and the like. .
- aliphatic ketone compounds examples include diisobutyl ketone, cycloheptanone, isophorone, 6-undecanone and the like.
- alcohol compounds methanol, ethanol, isopropyl alcohol, 1-heptanol, 2-ethyl-1-hexanol, propylene glycol, ethylene glycol, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, ethyl 3-hydroxyhexanate, triethylene Glycol monomethyl ether, tripropylene glycol monomethyl ether, diethylene glycol, cyclohexanol, 2-butoxyethanol and the like can be mentioned.
- amide compound examples include N, N-dimethylacetamide, 2-pyrrolidone, N-methylpyrrolidone, N, N-dimethylacetamide and the like.
- Other compounds include water, dimethyl sulfoxide, acetone, chloroform, methylene chloride and the like.
- the viscosity at 25 ° C. of the dispersion medium as described above is preferably about 1 to 20 mPa ⁇ s, more preferably about 1.5 to 15 mPa ⁇ s, and about 2 to 10 mPa ⁇ s. More preferable. If the viscosity of the dispersion medium at normal temperature is within the above range, the droplets ejected from the nozzle holes of the droplet ejection head are separated into the main droplets and the small droplets when the ink is ejected by the droplet ejection method. Occurrence of the phenomenon (satellite phenomenon) can be prevented or suppressed. Therefore, it is possible to improve the landing accuracy of the droplets on the adherend.
- the ink of the present invention when there is a possibility that particles containing nanocrystals are inactivated by oxygen, water, etc. and do not function stably, dissolved gas and water were removed as much as possible when preparing the ink.
- a post-treatment to remove dissolved oxygen and water as much as possible from the ink.
- the post-treatment include degassing treatment, treatment to saturate or supersaturate an inert gas, heat treatment, dehydration treatment to be performed by passing a drying agent, and the like.
- the dissolved oxygen and moisture in the ink are preferably 200 ppm or less, more preferably 100 ppm or less, and still more preferably 10 ppm or less.
- the amount of particles contained in the ink is preferably 50% by mass or less, more preferably about 0.01 to 30% by mass, and still more preferably about 0.1 to 10% by mass.
- the discharge stability can be further improved.
- the particles (nanocrystals) are less likely to be aggregated with each other, and the light emission efficiency of the obtained light emitting layer can be enhanced.
- the mass of the particles refers to the sum of the mass of the nanocrystals and the mass of the dispersant supported by the nanocrystals.
- the amount of particles contained in the ink means, when the ink is composed of particles and a dispersion medium, the sum of the particles and the dispersion medium is 100% by mass.
- the ink is composed of particles, nonvolatile components other than particles, and dispersion medium, it refers to mass% of particles when the total of particles, nonvolatile components, and dispersion medium is 100% by mass. .
- a dispersant having a boiling point (hereinafter, also simply referred to as "boiling point") under atmospheric pressure (1 atm) of 200 ° C. or higher is used.
- the dispersion medium having a boiling point in such a temperature range is difficult to evaporate (vaporize). Therefore, by using the ink containing the dispersion medium, when the ink is discharged by the droplet discharge method, the ink is suitably prevented from being dried in the vicinity of the nozzle hole of the droplet discharge head, and the nozzle hole is Not clogged. As a result, the ejection stability of the ink can be maintained for a long time, and the formation efficiency of the light emitting layer can be improved.
- the boiling point of the dispersion medium may be 200 ° C. or higher, but is preferably about 200 to 340 ° C., and more preferably about 210 to 320 ° C.
- the effect can be further improved by using a dispersion medium having a boiling point in such a temperature range.
- a dispersion medium containing a polar compound having a polar group In particular, it is preferable to use a dispersion medium containing a polar compound having a polar group.
- Polar compounds exhibit high adsorption power to nanocrystals at polar groups. For this reason, the polar compound is adsorbed (solvated) on the surface of the nanocrystal and exhibits a function of enhancing the dispersibility of the nanocrystal in the ink, that is, a function as a kind of dispersant. Therefore, the storage stability of the ink can be improved by using a polar compound.
- the amount of the polar compound contained in the dispersion medium is preferably about 20 to 80% by mass, and more preferably about 30 to 70% by mass.
- the amount of polar compound contained in the ink can be set appropriately. For this reason, when the coating film is dried when forming the light emitting layer, the polar compound is sufficiently removed from the inside of the light emitting layer. Therefore, the light emission life of the light emitting layer (light emitting element) can be improved. In particular, by properly adjusting the relationship with the amount of particles contained in the ink, the effect becomes more remarkable.
- a polar group which a polar compound has a hydroxyl group, a carbonyl group, a thiol group, an amino group, a nitro group, a cyano group etc. are mentioned, for example.
- the polar group is preferably at least one selected from the group consisting of a hydroxyl group and a carbonyl group. These polar groups are preferred because of their particularly high affinity to nanocrystals.
- the polar compounds are methyl benzoate, ethyl benzoate, phenyl propionate, isopropyl benzoate, methyl 4-methylbenzoate, propyl benzoate, butyl benzoate, isopentyl benzoate, ethyl p-anisate, dimethyl phthalate
- Aromatic ester compounds such as: acetophenone, propiophenone, 4'-methylacetophenone, 4'-ethylacetophenone, aromatic ketone compounds such as butylphenyl ketone; hexyl acetate, isoamyl lactate, amyl valerate, ethyl levrilate ⁇ -valerolactone, ethyl octanoate, ⁇ -hexalactone, isoamyl hexanate, amyl hexanate, nonyl acetate, methyl decanoate, diethyl glutarate, ⁇ -
- the weight-average molecular weight of the dispersing agent supported on the nanocrystals is preferably about 100 to 10,000, and more preferably about 250 to 5,000. Dispersants of such weight average molecular weight are easily desorbed from nanocrystals, so the types of compounds that can be used as dispersants are generally limited. If a dispersion medium containing a polar compound is used, even if the dispersant is desorbed from the nanocrystal in the ink, the polar compound is adsorbed to the nanocrystal so as to complement it and behave like a dispersant. Therefore, storage stability of the ink can be secured. On the other hand, when the light emitting layer is formed, the dispersant is surely removed from the coating film, so that the light emitting life of the light emitting layer (light emitting element) can be extended.
- the light emitting device of the present invention comprises an anode and a cathode (a pair of electrodes), and a light emitting layer provided between them and comprising the dried product of the ink of the present invention, and at least one of the light emitting layer and the anode and the cathode And a charge transport layer provided therebetween.
- the charge transport layer preferably includes at least one layer selected from the group consisting of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.
- the light emitting device of the present invention may further include a sealing member or the like.
- FIG. 1 is a cross-sectional view showing an embodiment of a light emitting device of the present invention.
- FIG. 1 for convenience, the dimensions of the respective parts and the ratio thereof are shown exaggeratingly, and may differ from the actual one.
- the materials, dimensions, and the like described below are merely examples, and the present invention is not limited thereto, and can be appropriately changed without changing the gist of the invention.
- the upper side of FIG. 1 will be referred to as “upper side” or “upper side” and the upper side as “lower side” or “lower side”.
- FIG. 1 in order to avoid that a drawing becomes complicated, the description of the hatching which shows a cross section is abbreviate
- the light emitting device 1 shown in FIG. 1 includes a hole injection layer 4, a hole transport layer 5, and a light emitting layer 6 sequentially stacked from the anode 2 side between the anode 2, the cathode 3, and the anode 2 and the cathode 3. , The electron transport layer 7 and the electron injection layer 8. Each layer will be sequentially described below.
- the anode 2 has a function of supplying holes from the external power source toward the light emitting layer 6.
- the constituent material (anode material) of the anode 2 is not particularly limited.
- a metal such as gold (Au)
- a metal halide such as copper iodide (CuI)
- oxide examples thereof include metal oxides such as tin (SnO 2 ) and zinc oxide (ZnO). These may be used alone or in combination of two or more.
- the thickness of the anode 2 is not particularly limited, but is preferably about 10 to 1,000 nm, and more preferably about 10 to 200 nm.
- the anode 2 can be formed by, for example, a dry film forming method such as a vacuum evaporation method or a sputtering method.
- the anode 2 having a predetermined pattern may be formed by a photolithography method or a method using a mask.
- the cathode 3 has a function of supplying electrons from an external power source toward the light emitting layer 6.
- the constituent material (cathode material) of the cathode 3 is not particularly limited, but, for example, lithium, sodium, magnesium, aluminum, silver, sodium-potassium alloy, magnesium / aluminum mixture, magnesium / silver mixture, magnesium / indium mixture, aluminum / Aluminum oxide (Al 2 O 3 ) mixture, rare earth metals, etc. may be mentioned. These may be used alone or in combination of two or more.
- the thickness of the cathode 3 is not particularly limited, but is preferably about 0.1 to 1,000 nm, and more preferably about 1 to 200 nm.
- the cathode 3 can be formed by, for example, a dry film forming method such as a vapor deposition method or a sputtering method.
- the hole injection layer 4 has a function of receiving holes supplied from the anode 2 and injecting the holes into the hole transport layer 5.
- the hole injection layer 4 may be provided as necessary, and may be omitted.
- the constituent material (hole injection material) of the hole injection layer 4 is not particularly limited.
- phthalocyanine compounds such as copper phthalocyanine; 4,4 ', 4' '-tris [phenyl (m-tolyl) amino] Triphenylamine derivatives such as triphenylamine; 1,4,5,8,9,12-hexaazatriphenylenehexacarbonitrile, 2,3,5,6-tetrafluoro-7,7,8,8- Cyano compounds such as tetracyano-quinodimethane; metal oxides such as vanadium oxide and molybdenum oxide; amorphous carbon; polyaniline (emeraldine), poly (3,4-ethylenedioxythiophene) -poly (styrene sulfonic acid) (PEDOT -PSS), polymers such as polypyrrole, and the like.
- the hole injection material is preferably a polymer, and more preferably PEDOT-PSS.
- the above-described hole injection materials may be used alone or in combination of two or more.
- the thickness of the hole injection layer 4 is not particularly limited, but is preferably about 0.1 to 500 mm, more preferably about 1 to 300 nm, and still more preferably about 2 to 200 nm.
- the hole injection layer 4 may have a single-layer structure or a stacked structure in which two or more layers are stacked. Such a hole injection layer 4 can be formed by a wet film formation method or a dry film formation method.
- the hole injection layer 4 When the hole injection layer 4 is formed by a wet film formation method, an ink containing the above-described hole injection material is usually applied by various coating methods, and the obtained coating film is dried.
- the application method is not particularly limited, and examples thereof include an inkjet method (droplet discharge method), a spin coat method, a cast method, an LB method, a letterpress printing method, a gravure printing method, a screen printing method, a nozzle printing method and the like.
- a vacuum evaporation method, a sputtering method or the like can be suitably used.
- the hole transport layer 5 has a function of receiving holes from the hole injection layer 4 and efficiently transporting the holes to the light emitting layer 6.
- the hole transport layer 4 may have a function of preventing transport of electrons.
- the hole transport layer 5 may be provided if necessary, and may be omitted.
- the constituent material (hole transport material) of the hole transport layer 5 is not particularly limited, and, for example, TPD (N, N'-diphenyl-N, N'-di (3-methylphenyl) -1, 1 ' -Biphenyl-4,4'diamine), ⁇ -NPD (4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl), m-MTDATA (4,4 ', 4' '-) Low molecular weight triphenylamine derivatives such as tris (3-methylphenylphenylamino) triphenylamine); polyvinylcarbazole; poly [N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) -Benzidine] (poly-TPA), polyfluorene (PF), poly [N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) -benz
- the hole transport material is preferably a triphenylamine derivative, or a polymer compound obtained by polymerizing a triphenylamine derivative having a substituent introduced therein, and the substituent having a substituent introduced therein is preferable. More preferably, it is a polymer compound obtained by polymerizing a phenylamine derivative.
- the above-mentioned hole transport materials may be used alone or in combination of two or more.
- the thickness of the hole transport layer 5 is not particularly limited, but is preferably about 1 to 500 nm, more preferably about 5 to 300 nm, and still more preferably about 10 to 200 nm.
- the hole transport layer 5 may have a single-layer structure or a stacked structure in which two or more layers are stacked. Such a hole transport layer 5 can be formed by a wet film formation method or a dry film formation method.
- the ink containing the above-mentioned hole transport material is applied by various coating methods, and the obtained coating film is dried.
- the application method is not particularly limited, and examples thereof include an inkjet method (droplet discharge method), a spin coat method, a cast method, an LB method, a letterpress printing method, a gravure printing method, a screen printing method, a nozzle printing method and the like.
- a vacuum evaporation method, a sputtering method or the like can be suitably used.
- the electron injection layer 8 has a function of receiving the electrons supplied from the cathode 3 and injecting the electrons into the electron transport layer 7.
- the electron injection layer 8 may be provided if necessary, and can be omitted.
- the constituent material (electron injection material) of the electron injection layer 8 is not particularly limited, but, for example, alkali metal chalcogenides such as Li 2 O, LiO, Na 2 S, Na 2 Se, NaO; CaO, BaO, SrO, Alkaline earth metal chalcogenides such as BeO, BaS, MgO, CaSe; alkali metal halides such as CsF, LiF, NaF, KF, LiCl, KCl, NaCl; alkalis such as 8-hydroxyquinolinolatolithium (Liq) Metal salts; alkaline earth metal halides such as CaF 2 , BaF 2 , SrF 2 , MgF 2 , BeF 2 and the like can be mentioned.
- alkali metal chalcogenides such as Li 2 O, LiO, Na 2 S, Na 2 Se, NaO
- CaO, BaO, SrO, Alkaline earth metal chalcogenides such as BeO, BaS, Mg
- alkali metal chalcogenides alkaline earth metal halides and alkali metal salts are preferable.
- the above-mentioned electron injection materials may be used alone or in combination of two or more.
- the thickness of the electron injection layer 8 is not particularly limited, but is preferably about 0.1 to 100 nm, more preferably about 0.2 to 50 nm, and still more preferably about 0.5 to 10 nm. preferable.
- the electron injection layer 8 may have a single-layer structure or a stacked structure in which two or more layers are stacked. Such an electron injection layer 8 can be formed by a wet film formation method or a dry film formation method.
- the ink containing the above-mentioned electron injection material is applied by various coating methods, and the obtained coating film is dried.
- the application method is not particularly limited, and examples thereof include an inkjet method (droplet discharge method), a spin coat method, a cast method, an LB method, a letterpress printing method, a gravure printing method, a screen printing method, a nozzle printing method and the like.
- an inkjet method droplet discharge method
- a spin coat method a cast method
- an LB method a letterpress printing method
- a gravure printing method a screen printing method, a nozzle printing method and the like.
- the electron transport layer 7 has a function of receiving electrons from the electron injection layer 8 and efficiently transporting it to the light emitting layer 6.
- the electron transport layer 7 may have a function of preventing the transport of holes.
- the electron transport layer 7 may be provided as necessary, and may be omitted.
- the constituent material (electron transport material) of the electron transport layer 7 is not particularly limited.
- an electron transport material it is preferable that they are an imidazole derivative, a pyridine derivative, a pyrimidine derivative, a triazine derivative, and a metal oxide (inorganic oxide).
- the above-mentioned electron transporting materials may be used alone or in combination of two or more.
- the thickness of the electron transport layer 7 is not particularly limited, but is preferably about 5 to 500 nm, and more preferably about 5 to 200 nm.
- the electron transport layer 7 may be a single layer or a stack of two or more. Such an electron transport layer 7 can be formed by a wet film formation method or a dry film formation method.
- the ink containing the above-mentioned electron transport material is applied by various coating methods, and the obtained coating film is dried.
- the application method is not particularly limited, and examples thereof include an inkjet method (droplet discharge method), a spin coat method, a cast method, an LB method, a letterpress printing method, a gravure printing method, a screen printing method, a nozzle printing method and the like.
- a vacuum evaporation method, a sputtering method or the like may be applied.
- the light emitting layer 6 has a function of generating light emission using energy generated by recombination of holes and electrons injected into the light emitting layer 6.
- the light emitting layer 6 is composed of the dried product of the ink of the present invention. Therefore, since the nanocrystals are uniformly dispersed and present in the light emitting layer 6, the light emitting layer 6 has excellent light emitting efficiency.
- the thickness of the light emitting layer 6 is not particularly limited, but is preferably about 1 to 100 nm, and more preferably about 1 to 50 nm.
- the light emitting layer 8 applies the ink of this invention by various coating methods, and dries the obtained coating film.
- the coating method is not particularly limited, and examples thereof include inkjet printing (piezo method or thermal droplet discharge method), spin coating, casting, LB method, letterpress printing, gravure printing, screen printing, The nozzle printing method etc. are mentioned.
- the nozzle printing method is a method of applying ink in the form of stripes from the nozzle holes as liquid columns.
- the ink of the present invention can be suitably applied by inkjet printing.
- the ink of the present invention is preferably applied by a piezo inkjet printing method.
- a preferred apparatus used for applying the ink of the present invention is an inkjet printer having a piezo inkjet head.
- the light emitting element 1 may further include, for example, a bank (partition wall) that divides the hole injection layer 4, the hole transport layer 5, and the light emitting layer 6.
- the height of the bank is not particularly limited, but is preferably about 0.1 to 5 ⁇ m, more preferably about 0.2 to 4 ⁇ m, and still more preferably about 0.2 to 3 ⁇ m.
- the width of the bank opening is preferably about 10 to 200 ⁇ m, more preferably about 30 to 200 ⁇ m, and still more preferably about 50 to 100 ⁇ m.
- the length of the opening of the bank is preferably about 10 to 400 ⁇ m, more preferably about 20 to 200 ⁇ m, and still more preferably about 50 to 200 ⁇ m.
- the inclination angle of the bank is preferably about 10 to 100 °, more preferably about 10 to 90 °, and still more preferably about 10 to 80 °.
- the method of manufacturing a light emitting device is a step of forming a light emitting layer by supplying an ink as described above onto a support to form a coated film, and drying the coated film (hereinafter also referred to as "light emitting layer forming step" )have.
- the support is the hole transport layer 5 or the electron transport layer 7 in the configuration shown in FIG. 1, but it differs depending on the light emitting element to be manufactured.
- the support in the case of producing a light emitting device composed of an anode, a hole transport layer, a light emitting layer and a cathode, the support is a hole transport layer or a cathode.
- the support In the case of producing a light emitting device composed of an anode, a hole injection layer, a light emitting layer, an electron injection layer and a cathode, the support is a hole injection layer or an electron injection layer.
- the support may be an anode, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer or a cathode.
- the support is preferably an anode, a hole injection layer or a hole transport layer, more preferably a hole injection layer or a hole transport layer, and still more preferably a hole transport layer.
- the light emitting layer 6 is formed according to the method for forming a light emitting layer of the present invention.
- the method of forming the light emitting layer includes the following: [1] a first step of preparing the ink as described above, [2] a second step of forming a coating of the ink on the support, and [3] the first And [4] a fourth step of further removing the dispersion medium from the coating film at a second pressure.
- an ink is prepared by dispersing particles of nanocrystals carrying a dispersant in a dispersion medium.
- a commercially available ink having such a configuration may be purchased.
- a support Prior to the second step, a support is prepared.
- the anode 2, the hole injection layer 4 and the hole transport layer 5 (support) are sequentially or the cathode 3, the electron injection layer 8 and the electron transport layer 7 (support) by the method as described above.
- the above-mentioned bank may be formed on the support. By forming the bank, the light emitting layer 6 can be formed only at a desired position on the support.
- the ink is supplied to the support (the hole transport layer 5 or the electron transport layer 7) by various coating methods as described above to form a coating film on the support.
- ink is intermittently discharged from a nozzle hole of a droplet discharge head onto a support in a predetermined pattern.
- drawing patterning can be performed with a high degree of freedom.
- the piezoelectric droplet discharge method the selectivity of the dispersion medium can be enhanced, and the heat load on the ink can be reduced.
- the ejection amount of the ink is not particularly limited, but is preferably 1 to 50 pL / time, more preferably 1 to 30 pL / time, and still more preferably 1 to 20 pL / time.
- the opening diameter of the nozzle hole is preferably about 5 to 50 ⁇ m, and more preferably about 10 to 30 ⁇ m.
- the temperature for forming the coating film is not particularly limited, but is preferably about 10 to 50 ° C., more preferably about 15 to 40 ° C., and still more preferably about 15 to 30 ° C. By discharging droplets at such a temperature, crystallization of various components (such as nanocrystals, dispersants, charge transport materials, and the like) contained in the ink can be suppressed.
- the relative humidity at the time of forming the coating film is not particularly limited, but is preferably about 0.01 ppm to 80%, more preferably about 0.05 ppm to 60%, and more preferably 0.1 ppm to 15 % Is more preferable, 1 ppm to 1% is particularly preferable, and 5 to 100 ppm is most preferable. It is preferable from the control of the conditions at the time of forming a coating film becoming easy for relative humidity to be more than the said lower limit. On the other hand, it is preferable from the ability to reduce the moisture content adsorbed to the coating film which may exert a bad influence on the light emitting layer 6 obtained as relative humidity is below the said upper limit.
- the dispersion medium is removed from the coating (drying of the coating). Since the first pressure is a mild pressure, the dispersion medium can be slowly removed from the coating by adjusting the drying temperature of the coating. Therefore, the smoothness of the obtained light emitting layer 6 can be maintained.
- particles (nanocrystals) are present uniformly and densely. Therefore, the light emission characteristics (low voltage drive, long luminance half life) of the light emitting layer (light emitting element) can be improved.
- the first pressure may be about 1 to 500 Pa, but is preferably about 1 to 350 Pa, and more preferably about 1 to 200 Pa.
- the pressure reduction rate in this step [3] is preferably about 1.7 ⁇ 10 2 to 1.7 ⁇ 10 3 Pa, and about 2 ⁇ 10 2 to 1.5 ⁇ 10 3 Pa More preferable. Thereby, the coating film can be dried more slowly.
- the time for maintaining the inside of the chamber at the first pressure is set to 2 minutes or more, preferably about 3 to 30 minutes, and more preferably about 5 to 20 minutes.
- the coating can be dried slowly and reliably, that is, the dispersion medium can be removed.
- the smoothness of the light emitting layer 6 can be further improved.
- the temperature (drying temperature) at which the pressure is maintained at the first pressure is not particularly limited, but is preferably about room temperature (25 ° C.) to 60 ° C., and more preferably about 30 to 50 ° C. By setting to such a drying temperature, the coating film can be more slowly dried in combination with the effect of the mild first pressure.
- the pressure may be reduced to a predetermined first pressure in the range of 1 to 500 Pa, and then held at a constant first pressure for 2 minutes or more, or in the range of 1 to 500 Pa The first pressure may be maintained for 2 minutes or more while being lowered.
- the second pressure may be lower than the first pressure, but is preferably 5 ⁇ 10 ⁇ 2 Pa or less, and more preferably 1 ⁇ 10 ⁇ 3 to 8 ⁇ 10 ⁇ 3 Pa or less.
- the predetermined time (drying time) is also not particularly limited, but is preferably about 2 to 30 minutes, and more preferably about 3 to 20 minutes.
- the temperature (drying temperature) at which the pressure is maintained at the second pressure is not particularly limited, but is preferably about room temperature (25 ° C.) to about 150 ° C., and more preferably about 30 to 100 ° C. By setting such a drying temperature, the coating film can be more reliably dried in combination with the effect of the second pressure lower than the first pressure.
- the present step [4] may be held at a constant second pressure for a predetermined time, or may be held for a predetermined time while lowering the second pressure in a specific temperature range. You may hold it.
- this invention is not limited to the structure of embodiment mentioned above.
- one or more steps for any desired purpose may be added to the method of forming a light emitting layer and the method of manufacturing a light emitting device of the present invention.
- Example 3 Production of Light Emitting Element (Example 1) First, a positive photoresist to which a fluorine surfactant was added was spin-coated on a glass substrate (40 mm ⁇ 70 mm) patterned with ITO in stripes. Thereafter, for the positive photoresist, by photolithography patterning, banks each defining a pixel of 300 ⁇ m long and 100 ⁇ m wide (vertical pitch 350 ⁇ m, horizontal pitch 150 ⁇ m) were formed. Thus, a banked support was obtained. The thickness of the bank was measured using an optical interference surface shape measuring apparatus (manufactured by Ryoka System Co., Ltd.) to confirm that a bank having a thickness of 2.0 ⁇ m was formed.
- an optical interference surface shape measuring apparatus manufactured by Ryoka System Co., Ltd.
- the hole injection layer is PEDOT / PSS (CLEVIOUS P JET)
- the hole transport layer is a tetralin solution of 1.0% by mass of TFB
- the light emitting layer is the ink obtained above. It formed.
- the light emitting layer was formed through the first drying step and the second drying step as follows.
- the banked support on which the coating was formed was housed in a chamber, and the pressure in the chamber was reduced to 500 Pa (first pressure). Note that the pressure reduction rate at the time of pressure reduction in the chamber was 1 ⁇ 10 3 Pa / sec. Thereafter, the chamber was kept at room temperature (25 ° C.) and 500 Pa for 5 minutes. This removed the ⁇ -decanolactone from the coating.
- the pressure in the chamber was reduced to 8 ⁇ 10 ⁇ 3 Pa (second pressure). Note that the pressure reduction rate at the time of pressure reduction in the chamber was 1 ⁇ 10 3 Pa / sec. Thereafter, the chamber was held at 40 ° C. and 8 ⁇ 10 ⁇ 3 Pa for 10 minutes. This further removed the ⁇ -decanolactone from the coating.
- the support formed up to the light emitting layer was conveyed to a vacuum deposition machine, and an electron transport layer of 40 nm, an electron injection layer of 0.5 nm, and a cathode of 100 nm were sequentially formed by vapor deposition.
- the electron transporting layer was formed using TPBI
- the electron injecting layer was formed using lithium fluoride
- the cathode was formed using aluminum.
- the support formed up to the cathode was transported to a glove box, and the sealing glass coated with the epoxy resin was attached to the support. Thus, a light emitting element was manufactured.
- Examples 2 to 20, Comparative Examples 1 to 3 A light emitting device was manufactured in the same manner as Example 1, except that the conditions (pressure, holding time) of the first drying step and the second drying step were changed as shown in Tables 1 to 4.
- Comparative example 4 A light emitting device was manufactured in the same manner as in Example 1 except that the second drying step was omitted.
- the light emitting device obtained in each example was able to reduce the driving voltage and improve the luminance half life.
- setting the first pressure of the first drying step to 1 to 500 Pa allows the light emitting layer to maintain smoothness by slowly and sufficiently removing the dispersion medium from the coating film. As a result, it is considered that this is because particles (nanocrystals) are uniformly and densely distributed in the light emitting layer.
- the first pressure in the first drying step was set to less than 1 Pa as in Comparative Example 2, the driving voltage of the light emitting element was reduced, and the luminance half life could not be improved.
- the driving voltage of the light emitting element can be further reduced and the luminance half life can be further improved by lengthening the time for which the first pressure is maintained in the first drying step.
- the driving voltage is reduced and the luminance half life is improved. I could not.
- the second drying step is essential, and the second pressure is further lowered to lower the effect. Was able to improve.
- the driving voltage of the light emitting element can be further reduced and the luminance half life can be further improved by prolonging the time for which the second pressure is maintained in the drying process of Title 2.
- the second pressure was 7 ⁇ 10 ⁇ 3 Pa, no further increase in the effect could be expected even if the holding time was 30 minutes or more.
- Example 5 Influence by difference in type of dispersion medium (Examples 21 to 25) An ink was prepared and a light emitting device was manufactured in the same manner as Example 15 except that the dispersion medium was changed as shown in Table 5. Further, with respect to the obtained light emitting element, evaluation of the drive voltage and the light emission lifetime was performed in the same manner as described above. The evaluation results are shown in Table 5.
- the light emitting device obtained by changing the dispersion medium also had better driving voltage and light emitting life than the light emitting device obtained in Comparative Example 1.
- a polar compound as a dispersion medium rather than a low polarity compound such as diphenyl ether, it is presumed that aggregation of nanocrystals is suppressed and better results are obtained.
- the present invention provides an ink comprising a semiconductor nanocrystal having a light-emitting property, a particle composed of a dispersant supported by the semiconductor nanocrystal, and a dispersion medium having a boiling point of 200 ° C. or higher at atmospheric pressure. And the step of: supplying the ink to a support to form a coating on the support; and storing the support on which the coating is formed in a chamber; Reducing the pressure to a first pressure of 500 Pa and holding the pressure at the first pressure for 2 minutes or more to remove the dispersion medium from the coating, and secondly, the chamber is lower than the first pressure And reducing the pressure to the second pressure and further removing the dispersion medium from the coating film, and the light emitting layer is formed.
- Light emitting layer and light emitting element excellent in characteristics It is possible to provide a method for producing.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
Abstract
Description
(1) 発光性を有する半導体ナノ結晶と、該半導体ナノ結晶に担持された分散剤とから構成された粒子と、大気圧下における沸点が200℃以上である分散媒とを含むインクを用意する工程と、
前記インクを支持体に供給して、前記支持体上に塗膜を形成する工程と、
前記塗膜が形成された前記支持体をチャンバ内に収容し、前記チャンバ内を1~500Paの第1の圧力に減圧するとともに、該第1の圧力に2分間以上保持して、前記塗膜から前記分散媒を除去する工程と、
前記チャンバ内を前記第1の圧力より低い第2の圧力に減圧するとともに、該第2の圧力に所定の時間保持して、前記塗膜から前記分散媒をさらに除去する工程とを有することを特徴とする発光層の形成方法。
該発光層を形成する工程の前または後に、陽極または陰極を形成する工程とを有することを特徴とする発光素子の製造方法。
<インク>
本発明で用いられるインクは、発光性を有する半導体ナノ結晶と、該半導体ナノ結晶に担持された分散剤とから構成された粒子と、この粒子を分散する分散媒とを含有する。
なお、インクは、必要に応じて、例えば、電荷輸送材料、界面活性剤等を含有してもよい。
粒子は、半導体ナノ結晶と、この半導体ナノ結晶に担持された分散剤とから構成されている。半導体ナノ結晶(以下、単に「ナノ結晶」と言うこともある。)は、励起光を吸収して蛍光または燐光を発光するナノサイズの結晶体(ナノ結晶粒子)であり、例えば、透過型電子顕微鏡または走査型電子顕微鏡によって測定される最大粒子径が100nm以下である結晶体である。
ナノ結晶は、例えば、所定の波長の光エネルギーや電気エネルギーにより励起され、蛍光または燐光を発することができる。
なお、ナノ結晶の発光ピークの波長は、例えば、紫外可視分光光度計を用いて測定される蛍光スペクトルまたは燐光スペクトルにおいて確認することできる。
これらの上限値および下限値は、任意に組み合わせることができる。なお、以下の同様の記載においても、個別に記載した上限値および下限値は任意に組み合わせ可能である。
さらに、コアおよびシェルのそれぞれは、2種以上の半導体材料を含む混晶(例えば、CdSe+CdS、CIS+ZnS等)で構成されてもよい。
これらの半導体材料で構成されるナノ結晶は、発光スペクトルの制御が容易であり、信頼性を確保しつつ、生産コストを低減し、量産性を向上させることができる。
また、ナノ結晶は、それ自体として、人体等に対する悪影響が極力低いことが好ましい。したがって、カドミウム、セレン等が極力含まれないナノ結晶を選択して単独で用いるか、上記元素(カドミウム、セレン等)を含有するナノ結晶を用いる場合には、上記元素が極力少なくなるようにその他のナノ結晶と組み合わせて用いることが好ましい。
また、ナノ結晶の平均粒子径(体積平均径)は、1nm以上であることが好ましく、1.5nm以上であることがより好ましく、2nm以上であることがさらに好ましい。かかる平均粒子径を有するナノ結晶は、所望の波長の光を発し易いのみならず、インクへの分散性および保存安定性を向上させ得ることからも好ましい。
なお、ナノ結晶の平均粒子径(体積平均径)は、透過型電子顕微鏡または走査型電子顕微鏡により測定し、体積平均径を算出することにより得られる。
ナノ結晶は、量子サイズ効果によって発光を生じる。このため、ナノ結晶は、凝集すると消光現象が生じ、蛍光量子収率の低下を招き、輝度および色再現性が低下する。すなわち、本発明のようなナノ結晶を分散媒に分散してなるインクは、有機発光材料を溶媒に溶解してなるインクと異なり、凝集による発光特性の低下を生じ易い。このため、本発明のインクでは、ナノ結晶の分散安定性を確保する観点からの調製が重要となる。
このようなことから、本発明では、ナノ結晶の表面に分散媒と相溶性のある分散剤(有機リガンド)が担持(保持)されて、換言すれば、ナノ結晶の表面が分散剤によって不活性化されている。この分散剤の存在により、ナノ結晶のインク中での分散安定性を向上させることができる。
なお、分散剤は、ナノ結晶の表面に、例えば、共有結合、配位結合、イオン結合、水素結合、ファンデルワールス結合等により担持されている。本明細書中において、「担持」とは、分散剤がナノ結晶の表面に吸着、付着または結合された状態を総称する用語である。また、分散剤は、ナノ結晶の表面から脱離することができ、ナノ結晶による担持とナノ結晶からの脱離とが平衡状態となり、これらを繰り返すことができる。
なお、本明細書中において、「重量平均分子量(Mw)」は、ポリスチレンを標準物質としたゲル浸透クロマトグラフィ(GPC)を用いて測定された値を採用するものとする。
このような官能基としては、1級アミノ基、2級アミノ基、3級アミノ基、リン酸基、リン酸エステル基、ホスホン酸基、ホスホン酸エステル基、ホスフィン酸基、ホスフィン酸エステル基、チオール基、チオエーテル基、スルホン酸基、スルホン酸エステル基、カルボン酸基、カルボン酸エステル基、ヒドロキシル基、エーテル基、イミダゾリル基、トリアジニル基、ピロリドニル基、イソシアヌル酸基、ホウ酸エステル基、ボロン酸基等が挙げられる。
さらに、インク中で適切にナノ結晶への高い担持能力を有する点から、1級アミノ基、2級アミノ基、3級アミノ基、リン酸基、ホスホン酸基、カルボン酸基がより好ましい。
2級アミノ基を有する高分子分散剤としては、例えば、多数の2級アミノ基を有する直鎖型ポリエチレンイミン骨格を含む主鎖と、ポリエステル、アクリル樹脂、ポリウレタン等の側鎖とを有する櫛型ブロックコポリマー等が挙げられる。
また、1級アミノ基、2級アミノ基および3級アミノ基を有する高分子分散剤としては、例えば、特開2008-037884号公報、特開2008-037949号公報、特開2008-03818号公報、特開2010-007124号公報に記載された直鎖型または多分岐型ポリエチレンイミンブロックとポリエチレングリコールブロックとを有する高分子化合物等が挙げられる。
なお、リン酸基を有する高分子分散剤は、アルカリ金属水酸化物やアルカリ土類金属水酸化物を反応させることで塩を形成させ、pHを調整することも可能である。
なお、ホスホン酸基を有する高分子分散剤は、アルカリ金属水酸化物やアルカリ土類金属水酸化物を反応させることで塩を形成させ、pHを調整することも可能である。
チオエーテル基を有する高分子分散剤としては、例えば、特開2013-60637号公報に記載されたメルカプトプロピオン酸とグリシジル変性ポリアルキレングリコールとを反応させて得られるポリアルキレングリコールチオエーテル等が挙げられる。
なお、スルホン酸基を有する高分子分散剤は、アルカリ金属水酸化物やアルカリ土類金属水酸化物を反応させることで塩を形成させ、pHを調整することも可能である。
なお、カルボン酸基を有する高分子分散剤は、アルカリ金属水酸化物やアルカリ土類金属水酸化物を反応させることで塩を形成させ、pHを調整することも可能である。
ピロリドニル基を有する高分子分散剤としては、例えば、ポリビニルピロリドン等が挙げられる。
市販品としては、例えば、ビックケミー社製のDISPERBYKシリーズに含まれるDISPERBYK-102、DISPERBYK-103、DISPERBYK-108、DISPERBYK-109、DISPERBYK-110、DISPERBYK-111、DISPERBYK-118、DISPERBYK-140、DISPERBYK-145、DISPERBYK-161、DISPERBYK-164、DISPERBYK-168、DISPERBYK-168、DISPERBYK-180、DISPERBYK-182、DISPERBYK-184、DISPERBYK-185、DISPERBYK-190、DISPERBYK-191、DISPERBYK-2000、DISPERBYK-2001、DISPERBYK-2008、DISPERBYK-2009、DISPERBYK-2010、DISPERBYK-2012、DISPERBYK-2013、DISPERBYK-2022、DISPERBYK-2025、DISPERBYK-2050、DISPERBYK-2060、DISPERBYK-9070、DISPERBYK-9077;エボニック社製のTEGO Dispersシリーズに含まれるTEGO Dispers 610、TEGO Dispers 630、TEGO Dispers 650、TEGO Dispers 651、TEGO Dispers 652、TEGO Dispers 655、TEGO Dispers 660C、TEGO Dispers 662C、TEGO Dispers 670、TEGO Dispers 685、TEGO Dispers 700、TEGO Dispers 710、TEGO Dispers 715W、TEGO Dispers 740W、TEGO Dispers 750W、TEGO Dispers 752W、TEGO Dispers 755W、TEGO Dispers 760W;BASF社製のEFKAシリーズに含まれるEFKA-44、EFKA-46、EFKA-47、EFKA-48、EFKA-4010、EFKA-4050、EFKA-4055、EFKA-4020、EFKA-4015、EFKA-4060、EFKA-4300、EFKA-4330、EFKA-4400、EFKA-4406、EFKA-4510、EFKA-4800;日本ルーブリゾール社製のSOLSPERSEシリーズに含まれるSOLSPERS-3000、SOLSPERS-9000、SOLSPERS-16000、SOLSPERS-17000、SOLSPERS-18000、SOLSPERS-13940、SOLSPERS-20000、SOLSPERS-24000、SOLSPERS-32550、SOLSPERS-71000;味の素ファインテクノ社製のアジスパーシリーズに含まれるアジスパー(AJISPUR)PB-821、アジスパーPB-822、アジスパーPB-823;楠本化成製のDISPARLONシリーズに含まれるDISPARLON DA325、DISPARLON DA375、DISPARLON DA1800、DISPARLON DA7301;共栄社化学社製のフローレンシリーズに含まれるフローレン(FLORENE)DOPA-17HF、フローレンDOPA-15BHF、フローレンDOPA-33、フローレンDOPA-44等が挙げられる。
なお、これら高分子分散剤は、1種を単独で用いてもよいし、2種以上を組み合わせて用いてもよい。
かかる観点から、分散剤の重量平均分子量(Mw)は、50,000以下であることが好ましく、100~50,000程度であることがより好ましい。なお、低分子分散剤のうち重合体でない化合物の質量を表す場合には、「重量平均分子量」に代えて「分子量」を用いる。
一方、ナノ結晶に対する分散剤の量は、ナノ結晶100質量%に対して1質量%以上であることが好ましく、3質量%以上であることがより好ましく、5質量%以上であることがさらに好ましい。これにより、インク中におけるナノ結晶の十分な分散安定性を保持することができる。
電荷輸送材料は、通常、発光層に注入された正孔および電子を輸送する機能を有する。
電荷輸送材料は、正孔および電子を輸送する機能を有するものであれば、特に限定されない。電荷輸送材料は、高分子電荷輸送材料と低分子電荷輸送材料とに分類される。
界面活性剤としては、例えば、フッ素系界面活性剤、シリコーン系界面活性剤、炭化水素系界面活性剤等のうちの1種または2種以上を組み合わせて用いることができる。これらの中でも、電荷をトラップし難いことから、シリコーン系界面活性剤および/または炭化水素系界面活性剤が好ましい。
これらの具体例としては、例えば、ビックケミー社製のBYKシリーズ、日信化学工業株式会社製のサーフィノール等が挙げられる。これらの中でも、インクを塗布した際に平滑性の高い塗膜が得られることから、有機変性シロキサンからなるシリコーン系界面活性剤を好適に用いることができる。
このような分散剤を担持したナノ結晶からなる粒子が分散媒に分散されている。
分散媒としては、特に限定されないが、例えば、芳香族炭化水素化合物、芳香族エステル化合物、芳香族エーテル化合物、芳香族ケトン化合物、脂肪族炭化水素化合物、脂肪族エステル化合物、脂肪族エーテル化合物、脂肪族ケトン化合物、アルコール化合物、アミド化合物、他の化合物等が挙げられ、これらのうちの1種または2種以上を組み合わせて用いることができる。
脂肪族炭化水素化合物としては、ペンタン、ヘキサン、オクタン、シクロヘキサン等が挙げられる。
アルコール化合物としては、メタノール、エタノール、イソプロピルアルコール、1-ヘプタノール、2-エチル-1-ヘキサノール、プロピレングリコ-ル、エチレングリコール、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノブチルエーテル、エチル 3-ヒドロキシヘキサネート、トリエチレングリコールモノメチルエーテル、トリプロピレングリコールモノメチルエーテル、ジエチレングリコール、シクロヘキサノール、2-ブトキシエタノール等が挙げられる。
他の化合物としては、水、ジメチルスルホキシド、アセトン、クロロホルム、塩化メチレン等が挙げられる。
なお、インク中の溶存酸素や水分は、200ppm以下にすることが好ましく、100ppm以下にすることがより好ましく、10ppm以下にすることがさらに好ましい。
ここで、粒子の質量は、ナノ結晶の質量とこのナノ結晶に担持された分散剤の質量との合計値を指す。
本発明の発光素子は、陽極および陰極(一対の電極)と、これらの間に設けられ、本発明のインクの乾燥物で構成された発光層と、発光層と陽極および陰極の少なくとも一方の電極との間に設けられた電荷輸送層とを備えている。
なお、電荷輸送層は、正孔注入層、正孔輸送層、電子輸送層および電子注入層からなる群より選択される少なくとも1層を含むことが好ましい。また、本発明の発光素子は、さらに、封止部材等を備えてもよい。
なお、図1では、便宜上、各部の寸法およびそれらの比率を誇張して示し、実際とは異なる場合がある。また、以下に示す材料、寸法等は一例であって、本発明は、それらに限定されず、その要旨を変更しない範囲で適宜変更することが可能である。
以下では、説明の都合上、図1の上側を「上側」または「上方」と、上側を「下側」または「下方」と言う。また、図1では、図面が煩雑になることを避けるため、断面を示すハッチングの記載を省略している。
以下、各層について順次説明する。
陽極2は、外部電源から発光層6に向かって正孔を供給する機能を有する。
陽極2の構成材料(陽極材料)としては、特に限定されないが、例えば、金(Au)のような金属、ヨウ化銅(CuI)のようなハロゲン化金属、インジウムスズ酸化物(ITO)、酸化スズ(SnO2)、酸化亜鉛(ZnO)のような金属酸化物等が挙げられる。これらは、単独で用いても、2種以上を組み合わせて用いてもよい。
陽極2は、例えば、真空蒸着法やスパッタリング法のような乾式成膜法により形成することができる。この際、フォトリソグラフィー法やマスクを用いた方法により、所定のパターンを有する陽極2を形成してもよい。
陰極3は、外部電源から発光層6に向かって電子を供給する機能を有する。
陰極3の構成材料(陰極材料)としては、特に限定されないが、例えば、リチウム、ナトリウム、マグネシウム、アルミニウム、銀、ナトリウム-カリウム合金、マグネシウム/アルミニウム混合物、マグネシウム/銀混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、希土類金属等が挙げられる。これらは、単独で用いても、2種以上を組み合わせて用いてもよい。
陰極3は、例えば、蒸着法やスパッタリング法のような乾式成膜法により形成することができる。
正孔注入層4は、陽極2から供給された正孔を受け取り、正孔輸送層5に注入する機能を有する。なお、正孔注入層4は、必要に応じて設けるようにすればよく、省略することもできる。
また、上述の正孔注入材料は、単独で用いても、2種以上を組み合わせて用いてもよい。
正孔注入層4は、単層構成であっても、2層以上が積層された積層構成であってもよい。
このような正孔注入層4は、湿式成膜法または乾式成膜法により形成することができる。
一方、正孔注入層4を乾式成膜法で形成する場合には、真空蒸着法、スパッタリング法等を好適に用いることができる。
正孔輸送層5は、正孔注入層4から正孔を受け取り、発光層6まで効率的に輸送する機能を有する。また、正孔輸送層4は、電子の輸送を防止する機能を有していてもよい。なお、正孔輸送層5は、必要に応じて設けるようにすればよく、省略することもできる。
また、上述の正孔輸送材料は、単独で用いても、2種以上を組み合わせて用いてもよい。
正孔輸送層5は、単層構成であっても、2層以上が積層された積層構成であってもよい。
このような正孔輸送層5は、湿式成膜法または乾式成膜法により形成することができる。
一方、正孔輸送層5を乾式成膜法で形成する場合には、真空蒸着法、スパッタリング法等を好適に用いることができる。
電子注入層8は、陰極3から供給された電子を受け取り、電子輸送層7に注入する機能を有する。なお、電子注入層8は、必要に応じて設けるようにすればよく、省略することもできる。
また、上述の電子注入材料は、単独で用いても、2種以上を組み合わせて用いてもよい。
電子注入層8は、単層構成であっても、2層以上が積層された積層構成であってもよい。
このような電子注入層8は、湿式成膜法または乾式成膜法により形成することができる。
一方、電子注入層8を乾式成膜法で形成する場合には、真空蒸着法、スパッタリング法等が適用されうる。
電子輸送層7は、電子注入層8から電子を受け取り、発光層6まで効率的に輸送する機能を有する。また、電子輸送層7は、正孔の輸送を防止する機能を有していてもよい。なお、電子輸送層7は、必要に応じて設けるようにすればよく、省略することもできる。
また、上述の電子輸送材料は、単独で用いても、2種以上を組み合わせて用いてもよい。
電子輸送層7の厚さは、特に限定されないが、5~500nm程度であることが好ましく、5~200nm程度であることがより好ましい。
電子輸送層7は、単層であっても、2以上が積層されたものであってもよい。
このような電子輸送層7は、湿式成膜法または乾式成膜法により形成することができる。
一方、電子輸送層7を乾式成膜法で形成する場合には、真空蒸着法、スパッタリング法等が適用されうる。
発光層6は、発光層6に注入された正孔および電子の再結合により生じるエネルギーを利用して発光を生じさせる機能を有する。
発光層6は、本発明のインクの乾燥物で構成される。したがって、発光層6中には、ナノ結晶が均一に分散して存在するため、発光層6は、優れた発光効率を有する。
発光層8は、本発明のインクを各種塗布法により塗布し、得られた塗膜を乾燥する。塗布法としては、特に限定されないが、例えば、インクジェット印刷法(ピエゾ方式またはサーマル方式の液滴吐出法)、スピンコート法、キャスト法、LB法、凸版印刷法、グラビア印刷法、スクリーン印刷法、ノズルプリント印刷法等が挙げられる。
ここで、ノズルプリント印刷法とは、インクをノズル孔から液柱としてストライプ状に塗布する方法である。
バンクの高さは、特に限定されないが、0.1~5μm程度であることが好ましく、0.2~4μm程度であることがより好ましく、0.2~3μm程度であることがさらに好ましい。
バンクの開口の長さは、10~400μm程度であることが好ましく、20~200μm程度であることがより好ましく、50~200μm程度であることがさらに好ましい。
また、バンクの傾斜角度は、10~100°程度であることが好ましく、10~90°程度であることがより好ましく、10~80°程度であることがさらに好ましい。
発光素子の製造方法は、前述したようなインクを支持体上に供給して塗膜を形成し、塗膜を乾燥することにより発光層を形成する工程(以下、「発光層形成工程」とも称する)を有している。
支持体は、図1に示す構成では、正孔輸送層5または電子輸送層7であるが、製造目的の発光素子によって異なる。
このように、支持体としては、陽極、正孔注入層、正孔輸送層、電子輸送層、電子注入層または陰極であり得る。なお、支持体は、好ましくは陽極、正孔注入層または正孔輸送層であり、より好ましくは正孔注入層または正孔輸送層であり、さらに好ましくは正孔輸送層である。
この発光層の形成方法は、[1]前述したようなインクを用意する第1の工程と、[2]支持体上にインクの塗膜を形成する第2の工程と、[3]第1の圧力で塗膜から分散媒を除去する第3の工程と、[4]第2の圧力で塗膜から分散媒をさらに除去する第4の工程とを有している。
まず、分散剤を担持したナノ結晶からなる粒子を分散媒に分散させることにより、インクを調製する。なお、かかる構成の市販のインクを購入するようにしてもよい。
この第2の工程に先立って、支持体を用意する。本実施形態では、前述したような方法で、陽極2、正孔注入層4および正孔輸送層5(支持体)を順に、または陰極3、電子注入層8および電子輸送層7(支持体)を順に積層する。
なお、支持体には、前述したようなバンクを形成してもよい。バンクを形成することにより、支持体上の所望の箇所にのみ発光層6を形成することができる。
例えば、液滴吐出法では、インクを液滴吐出ヘッドのノズル孔から間欠的に支持体上に所定のパターンで吐出する。液滴吐出法によれば、高い自由度で描画パターニングを行うことができる。中でも、ピエゾ方式の液滴吐出法によれば、分散媒の選択性を高めることができるとともに、インクに対する熱負荷を低減することができる。
また、ノズル孔の開口径は、5~50μm程度であることが好ましく、10~30μm程度であることがより好ましい。これにより、ノズル孔の目詰まりを防止しつつ、吐出精度を高めることができる。
相対湿度が前記下限値以上であると、塗膜を形成する際の条件の制御が容易となることから好ましい。一方、相対湿度が前記上限値以下であると、得られる発光層6に悪影響を及ぼし得る塗膜に吸着する水分量を低減することができることから好ましい。
次に、塗膜が形成された支持体をチャンバ(図示せず)内に収容し、チャンバ内を1~500Paの第1の圧力に減圧するとともに、この第1の圧力に2分間以上保持して、塗膜から分散媒を除去(塗膜を乾燥)する。
第1の圧力は、穏和な圧力であるので、塗膜の乾燥温度を調整することにより、塗膜から緩徐に分散媒を除去することができる。このため、得られる発光層6の平滑性を維持することができる。平滑性の高い発光層6中では、粒子(ナノ結晶)が均一かつ緻密に存在する。このため、発光層(発光素子)の発光特性(低電圧駆動、長い輝度半減寿命)を向上させることができる。
また、本工程[3]における減圧レートは、1.7×102~1.7×103Pa程度であることが好ましく、2×102~1.5×103Pa程度であることがより好ましい。これにより、塗膜をより緩徐に乾燥することができる。
なお、本工程[3]は、1~500Paの範囲の所定の第1の圧力に減圧した後、一定の第1の圧力で2分間以上保持するようにしてもよいし、1~500Paの範囲で第1の圧力を低下させつつ2分間以上保持するようにしてもよい。
その後、チャンバ内を第1の圧力より低い第2の圧力に減圧するとともに。この第2の圧力に所定の時間保持して、塗膜から分散媒をさらに除去する。これにより、塗膜中に残存する分散媒をより確実に除去することができる。
第2の圧力は、第1の圧力より低ければよいが、5×10-2Pa以下であることが好ましく、1×10-3~8×10-3Pa以下であることがより好ましい。
また、所定の時間(乾燥時間)も、特に限定されないが、2~30分間程度であることが好ましく、3~20分間程度であることがより好ましい。
第2の圧力に保持する際の温度(乾燥温度)は、特に限定されないが、室温(25℃)~150℃程度であることが好ましく、30~100℃程度であることがより好ましい。このような乾燥温度に設定することにより、第1の圧力より低い第2の圧力による効果と相俟って、塗膜をより確実に乾燥することができる。
第1の乾燥工程および第2の乾燥工程を、以上のような乾燥条件で行うことにより、得られる発光層6中において粒子(ナノ結晶)を均一かつ緻密に分布させることができる。結果として、発光素子の低電圧駆動を実現することができる。また、分散媒のみならず、分散剤も確実に塗膜中から除去され、得られる発光層6は、実質的にナノ結晶のみから構成されるようになる。かかる発光層6は、その発光寿命を向上させることができる。
例えば、本発明の発光層の形成方法および発光素子の製造方法には、それぞれ任意の目的の1つ以上の工程が追加されてもよい。
1.粒子の取出し
粒子を含有するトルエン溶液(5mg/mL、Aldrich社製;製品番号776785-5ML)に、ヘキサンを加え、遠心分離した後、粒子を含む沈殿物を濾取した。なお、粒子は、ZnSのシェルとInPのコアとを備えるナノ結晶と、それに担持されたオレイルアミンとからなる。
なお、沈殿物から複数のサンプルを取り出し、各サンプルを熱分解質量計で燃焼させ、その際の重量減少量を求めた。その結果、オレイルアミンの担持量は、ナノ結晶100質量%に対して10~30質量%程度であった。
1.0質量%になるように、得られた粒子を、δ-デカノラクトン(沸点267℃)に分散させることにより、インクを調製した。
(実施例1)
まず、ITOがストライプ状にパターニングされたガラス基板(40mm×70mm)上に、フッ素界面活性剤を添加したポジ型フォトレジストをスピンコートした。その後、ポジ型フォトレジストに対して、フォトリソグラフィーによるパターニングにより、縦300μm、横100μm(縦ピッチ350μm、横ピッチ150μm)のピクセルを区画するバンクを形成した。これにより、バンク付き支持体を得た。
なお、バンクの厚さを光干渉表面形状計測装置(株式会社菱化システム製)を用いて測定し、厚さ2.0μmのバンクが形成されていることを確認した。
なお、正孔注入層は、PEDOT/PSS(CLEVIOUS P JET)を、正孔輸送層は、1.0質量%のTFBのテトラリン溶液を、発光層は、上記で得られたインクをそれぞれ用いて形成した。
まず、インクを用いて、正孔輸送層上に塗膜を形成した。
この塗膜が形成されたバンク付き支持体をチャンバ内に収容し、チャンバ内を500Pa(第1の圧力)に減圧した。なお、チャンバ内を減圧する際の減圧レートを1×103Pa/secとした。
その後、チャンバ内を室温(25℃)、500Paにて5分間保持した。これにより、塗膜からδ-デカノラクトンを除去した。
その後、チャンバ内を40℃、8×10-3Paにて10分間保持した。これにより、塗膜からδ-デカノラクトンをさらに除去した。
なお、電子輸送層は、TPBIを、電子注入層は、フッ化リチウムを、陰極は、アルミニウムをそれぞれ用いて形成した。
さらに、陰極まで形成された支持体をグローブボックスに搬送し、エポキシ樹脂を塗布した封止ガラスを支持体に貼りあわせた。これにより、発光素子を製造した。
第1の乾燥工程および第2の乾燥工程の条件(圧力、保持時間)を表1~表4に示すように変更したこと以外は、前記実施例1と同様にして、発光素子を製造した。
(比較例4)
第2の乾燥工程を省略したこと以外は、前記実施例1と同様にして、発光素子を製造した。
4-1.駆動電圧の評価
各実施例および各比較例で得られた発光素子に電流を印加し、この際の駆動電圧を測定した。比較例1で得られた発光素子の駆動電圧を100%とし、比較例1以外で得られた発光素子の駆動電圧を相対値として求めた。なお、数値が小さいほど良好な結果であり、低電圧駆動が可能であることを示す。
各実施例および各比較例で得られた発光素子に、フォトダイオード式寿命測定装置(システム技研株式会社製)を用いて、初期輝度が100cd/m2となるように電流を印加し、連続駆動させた。初期輝度が半減するまでの時間(輝度半減寿命)を測定し、比較例1で得られた発光素子の輝度半減寿命を100%とし、比較例1以外で得られた発光素子の輝度半減寿命を相対値として求めた。なお、数値が大きいほど良好な結果であり、耐久性に優れることを示す。
これらの評価結果を表1~表4に示す。
一方、比較例2のように、第1の乾燥工程の第1の圧力を1Pa未満に設定すると、発光素子の駆動電圧を低下させ、輝度半減寿命を向上させることができなかった。
一方、比較例3で得られた発光素子では、第1の乾燥工程が短過ぎ、第2の乾燥工程で塗膜が急激に乾燥される結果、駆動電圧を低下させ、輝度半減寿命を向上させることができなかった。
(実施例21~実施例25)
分散媒を表5に示すように変更したこと以外は、前記実施例15と同様にして、インクを調製し、発光素子を製造した。
また、得られた発光素子について、前記と同様にして、駆動電圧および発光寿命の評価を行った。
これらの評価結果を表5に示す。
2 陽極
3 陰極
4 正孔注入層
5 正孔輸送層
6 発光層
7 電子輸送層
8 電子注入層
Claims (6)
- 発光性を有する半導体ナノ結晶と、該半導体ナノ結晶に担持された分散剤とから構成された粒子と、大気圧下における沸点が200℃以上である分散媒とを含むインクを用意する工程と、
前記インクを支持体に供給して、前記支持体上に塗膜を形成する工程と、
前記塗膜が形成された前記支持体をチャンバ内に収容し、前記チャンバ内を1~500Paの第1の圧力に減圧するとともに、該第1の圧力に2分間以上保持して、前記塗膜から前記分散媒を除去する工程と、
前記チャンバ内を前記第1の圧力より低い第2の圧力に減圧するとともに、該第2の圧力に所定の時間保持して、前記塗膜から前記分散媒をさらに除去する工程とを有することを特徴とする発光層の形成方法。 - 前記第1の圧力に保持する際の温度は、室温~60℃である請求項1に記載の発光層の形成方法。
- 前記第2の圧力は、5×10-2Pa以下である請求項1または2に記載の発光層の形成方法。
- 前記第2の圧力に保持する際の温度は、室温~150℃である請求項1から3のいずれかに記載の発光層の形成方法。
- 前記所定の時間は、2~30分間である請求項1から4のいずれかに記載の発光層の形成方法。
- 請求項1から5のいずれかの発光層の形成方法により発光層を形成する工程と、
該発光層を形成する工程の前または後に、陽極または陰極を形成する工程とを有することを特徴とする発光素子の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019546637A JP6753538B2 (ja) | 2017-10-04 | 2018-09-25 | 発光層の形成方法および発光素子の製造方法 |
US16/651,615 US20200303646A1 (en) | 2017-10-04 | 2018-09-25 | Method for forming light-emitting layer and method for producing light-emitting element |
CN201880075650.9A CN111373842A (zh) | 2017-10-04 | 2018-09-25 | 发光层的形成方法和发光元件的制造方法 |
KR1020207010859A KR20200062237A (ko) | 2017-10-04 | 2018-09-25 | 발광층의 형성 방법 및 발광 소자의 제조 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017194106 | 2017-10-04 | ||
JP2017-194106 | 2017-10-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019069738A1 true WO2019069738A1 (ja) | 2019-04-11 |
Family
ID=65994619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/035306 WO2019069738A1 (ja) | 2017-10-04 | 2018-09-25 | 発光層の形成方法および発光素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20200303646A1 (ja) |
JP (1) | JP6753538B2 (ja) |
KR (1) | KR20200062237A (ja) |
CN (1) | CN111373842A (ja) |
WO (1) | WO2019069738A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110739404B (zh) * | 2018-07-18 | 2021-04-02 | Tcl科技集团股份有限公司 | 量子点发光二极管及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010080167A (ja) * | 2008-09-25 | 2010-04-08 | Seiko Epson Corp | 乾燥方法、機能膜の製造方法、電気光学装置の製造方法、及び有機el装置の製造方法 |
JP2011034751A (ja) * | 2009-07-31 | 2011-02-17 | Seiko Epson Corp | 電気光学装置の製造方法 |
WO2017028638A1 (zh) * | 2015-08-14 | 2017-02-23 | 广州华睿光电材料有限公司 | 印刷油墨及电子器件 |
JP2017157421A (ja) * | 2016-03-02 | 2017-09-07 | 株式会社半導体エネルギー研究所 | 発光素子、静脈認証システム及び発光素子の作製方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9331295B2 (en) * | 2011-12-20 | 2016-05-03 | Seiko Epson Corporation | Film-forming ink, film-forming method, method of manufacturing light emitting element, light emitting element, light emitting device, and electronic apparatus |
-
2018
- 2018-09-25 WO PCT/JP2018/035306 patent/WO2019069738A1/ja active Application Filing
- 2018-09-25 KR KR1020207010859A patent/KR20200062237A/ko not_active Application Discontinuation
- 2018-09-25 US US16/651,615 patent/US20200303646A1/en not_active Abandoned
- 2018-09-25 JP JP2019546637A patent/JP6753538B2/ja active Active
- 2018-09-25 CN CN201880075650.9A patent/CN111373842A/zh not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010080167A (ja) * | 2008-09-25 | 2010-04-08 | Seiko Epson Corp | 乾燥方法、機能膜の製造方法、電気光学装置の製造方法、及び有機el装置の製造方法 |
JP2011034751A (ja) * | 2009-07-31 | 2011-02-17 | Seiko Epson Corp | 電気光学装置の製造方法 |
WO2017028638A1 (zh) * | 2015-08-14 | 2017-02-23 | 广州华睿光电材料有限公司 | 印刷油墨及电子器件 |
JP2017157421A (ja) * | 2016-03-02 | 2017-09-07 | 株式会社半導体エネルギー研究所 | 発光素子、静脈認証システム及び発光素子の作製方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2019069738A1 (ja) | 2020-07-27 |
JP6753538B2 (ja) | 2020-09-09 |
KR20200062237A (ko) | 2020-06-03 |
US20200303646A1 (en) | 2020-09-24 |
CN111373842A (zh) | 2020-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10770619B2 (en) | Light-emitting devices and displays with improved performance | |
JP6849091B2 (ja) | 粒子、インクおよび発光素子 | |
US9505978B2 (en) | Blue light emitting semiconductor nanocrystals and devices | |
US20100051901A1 (en) | Light emitting devices and displays with improved performance | |
WO2019078080A1 (ja) | レベリング剤、機能層形成用インク組成物及び積層電子部品 | |
JP7172238B2 (ja) | インクおよび発光素子 | |
WO2019069780A1 (ja) | インクおよび発光素子 | |
JP6753538B2 (ja) | 発光層の形成方法および発光素子の製造方法 | |
JP6849089B2 (ja) | インクおよび発光素子 | |
JP6973494B2 (ja) | インク、発光素子の製造方法および発光素子 | |
WO2019069698A1 (ja) | インクおよび発光素子 | |
JP2021116345A (ja) | インク組成物および発光素子 | |
JP6930597B2 (ja) | インクおよび発光素子 | |
WO2024147279A1 (ja) | 電荷輸送性インク組成物 | |
US20230257607A1 (en) | Quantum dot ink composition, and quantum dot electroluminescent device | |
US20240164128A1 (en) | Method for patterning nanoparticle film, method for manufacturing light-emitting device, and light-emitting device | |
JP2020181888A (ja) | 金属酸化物粒子、インク組成物および発光素子 | |
CN118057942A (zh) | 复合材料的制备方法、发光器件及其制备方法与电子设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18864380 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2019546637 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20207010859 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18864380 Country of ref document: EP Kind code of ref document: A1 |