WO2019062573A1 - Chambre de traitement et appareil à plasma à couplage capacitif - Google Patents

Chambre de traitement et appareil à plasma à couplage capacitif Download PDF

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Publication number
WO2019062573A1
WO2019062573A1 PCT/CN2018/105968 CN2018105968W WO2019062573A1 WO 2019062573 A1 WO2019062573 A1 WO 2019062573A1 CN 2018105968 W CN2018105968 W CN 2018105968W WO 2019062573 A1 WO2019062573 A1 WO 2019062573A1
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WIPO (PCT)
Prior art keywords
wafer
layer magnet
process chamber
inner layer
magnet
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PCT/CN2018/105968
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English (en)
Chinese (zh)
Inventor
王文章
陈鹏
丁培军
刘菲菲
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北京北方华创微电子装备有限公司
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Publication of WO2019062573A1 publication Critical patent/WO2019062573A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes

Definitions

  • the present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to a process chamber and a capacitively coupled plasma device.
  • the etch uniformity of the wafer is an important technical index.
  • the lower electrode size of the plasma etching apparatus is generally smaller than the wafer size. Therefore, there is an electric field far higher than the central region at the edge of the wafer, resulting in a higher plasma density in the edge region, a large ion flux reaching the edge of the wafer, and a high etching rate at the edge of the wafer, which seriously affects the etching of the wafer.
  • Uniformity called the fringe field effect, is especially severe in capacitively coupled plasma (CCP) etching equipment, where the etch rate of the edge of the wafer is sometimes more than double that of the center.
  • CCP capacitively coupled plasma
  • the problem of fringe electric field effect is mainly solved by a specific structure of a focus ring.
  • the focus ring diameter is slightly larger than the wafer.
  • the dielectric constant of the focus ring should be as large as possible, usually using quartz crystal or ceramic, and the selected material should be compatible with the etching process.
  • the focal ring of this structure can improve the distribution of the fringing electric field.
  • the ion flux reaching the edge of the wafer can be limited by adjusting the height and inner diameter of the focus ring, thereby reducing the etching rate of the edge of the wafer.
  • the fringe field effect is very strong, increasing the height of the focus ring and adjusting the inner diameter of the focus ring are difficult to effectively solve the problem of excessive edge etching rate; and, if the height of the focus ring is too large, The etch by-products are easily deposited on the inside of the focus ring, thereby affecting the stability of the process.
  • the present disclosure is directed to at least partially solving the technical problems existing in the prior art, and proposes a process chamber and a capacitively coupled plasma device.
  • a process chamber comprising:
  • a liner disposed within the chamber body, the liner defining a process region forming a processing wafer
  • the magnetic component corresponds to an edge region of the wafer such that a magnetic field generated by the magnetic component is distributed over an edge region of the wafer to reduce an edge region of the wafer Etching rate.
  • the magnetic assembly includes radially distributing the inner layer magnet and the outer layer magnet; wherein the inner layer magnet has a polarity opposite to that of the outer layer magnet.
  • the inner layer magnet and the outer layer magnet each have an annular structure.
  • the annular structure is formed by a plurality of cylindrical magnets equally spaced.
  • the annular structure is formed by a plurality of arcuate magnets equally spaced.
  • the annular structure is an integrally formed annular magnet.
  • the magnetic component is made of N38SH or N40SH.
  • the diameter of the inner layer magnet is greater than the diameter of the wafer, and the radial distance between the inner layer magnet and the outer layer magnet is less than 30 mm.
  • a support assembly including a base and a focus ring coupled to the base and surrounding a peripheral wall of the base, the base Including support discs and insulating discs;
  • the support disk is for carrying the wafer, and the insulating disk is for insulating the support disk from the inner liner.
  • the liner includes a top liner and a backing, the top liner and the backing together define a process area;
  • the support assembly is disposed on a surface of the substrate facing away from a bottom wall of the chamber body, the magnetic component is disposed on a surface of the substrate facing a bottom wall of the chamber body, and the magnetic The assembly corresponds to an edge region of the support assembly such that the magnetic field is distributed over an edge portion of the base and an area in which the focus ring is located.
  • the diameter of the inner layer magnet is larger than the diameter of the wafer, and the radial distance between the inner layer magnet and the outer layer magnet is equal to the bottom of the support disk facing away from the chamber body.
  • the surface of the wall is perpendicular to the surface of the substrate facing the bottom wall of the chamber body.
  • a capacitively coupled plasma apparatus including the process chamber described above.
  • the capacitively coupled plasma device is a capacitively coupled plasma pre-cleaning device.
  • the disclosure can effectively reduce the etching rate of the edge of the wafer, narrow the etching rate with the central region of the wafer, thereby improving the etching uniformity of the wafer and solving the fringe electric field effect.
  • the problem does not cause etch by-products to deposit on the inside of the focus ring, which ensures long-term stability of the process.
  • FIG. 1 is a schematic structural view of a process chamber of an embodiment of the present disclosure
  • FIG. 2 is a bottom plan view of a process chamber magnetic assembly of an embodiment of the present disclosure
  • FIG. 3 is a magnetic field distribution diagram of a process chamber of an embodiment of the present disclosure.
  • FIG. 4 is a bottom plan view of a process chamber magnetic assembly in accordance with another embodiment of the present disclosure.
  • Embodiments of the present disclosure provide a process chamber that can be applied to a capacitively coupled plasma device, and more particularly to a capacitively coupled plasma pre-cleaning device.
  • the process chamber 100 includes: a chamber The body 110, the inner liner 120 and the magnetic assembly 130.
  • the chamber body 110 includes a side wall 111 and a bottom wall 112 connected to the side wall 111.
  • the bottom wall 112 is provided with a suction port 112a for discharging process gas and etching by-products.
  • the liner 120 is disposed within the chamber body 110 for preventing the chamber body 110 from being corroded by plasma, and the liner 120 defines a process region S that forms a processing wafer (not shown).
  • the liner 120 can be a split structure.
  • the liner 120 can include a liner 121 and a top liner 122 that together define a process region S.
  • the inner liner 120 may also be an integral structure.
  • the magnetic component 130 is disposed outside the process area S.
  • the magnetic component 130 may be disposed under the process area S.
  • the magnetic component 130 is capable of generating a magnetic field, and the magnetic field generated thereby is capable of reducing the difference in etch rate between the edge region of the wafer and the central region during the wafer processing process.
  • the inventors have devised the structure of the process chamber 100 of the present disclosure by providing a magnetic component 130 outside of the process region S.
  • the magnetic component 130 can be disposed in an edge region of the wafer.
  • the magnetic field generated by the magnetic component 130 is mainly distributed above and below the magnetic component 130, so that part of the plasma can be confined in the distribution region of the magnetic field, and the electric field component perpendicular to the magnetic field is also difficult to be effectively coupled.
  • the plasma density at the edge of the wafer is reduced. Both of these factors result in a decrease in ion flux reaching the edge of the wafer, thereby reducing the etch rate at the edge of the wafer.
  • the magnetic field strength is rapidly attenuated, and the etching rate at the center of the wafer is hardly affected, thereby improving the uniformity of wafer etching.
  • the magnetic component 130 can be disposed on a surface of the backing 121 facing the bottom wall 112 of the chamber body 110, preferably the magnetic component 130 can correspond to an edge region of the wafer such that the magnetic component The magnetic field generated by 130 is distributed over the edge regions of the wafer to reduce the etch rate of the edge regions of the wafer.
  • the magnetic assembly 130 includes an inner layer magnet 131 and an outer layer magnet 132 distributed in the radial direction.
  • the polarity of the inner layer magnet 131 is opposite to the polarity of the outer layer magnet 132 so that a magnetic circuit can be formed therebetween.
  • the S pole of the inner layer magnet 131 faces upward and the N pole faces downward, and accordingly, the S pole of the outer layer magnet 132 faces downward and the N pole faces upward.
  • the inner magnet 131 may have the S pole facing downward and the N pole facing upward.
  • the outer magnet 132 has the S pole facing upward and the N pole facing downward.
  • the wafer has a circular structure, and therefore, in order to accommodate the structure of the wafer, the inner layer magnet 131 and the outer layer magnet 132 have an annular structure.
  • the inner layer magnet 131 and the outer layer magnet 132 are a plurality of (20 in FIG. 2) cylindrical magnets arranged in a concentric annular structure, and the cylindrical magnets are arranged. One end is fixed to the lower surface of the inner liner 120, and one end of the cylindrical magnet may be fixed to the lower surface of the inner liner 121 and should be in good contact with the lower surface of the inner liner 121 to prevent sparking.
  • the inner layer magnet 131 has the same polarity of all the cylindrical magnets, the polarities of all the cylindrical magnets of the outer layer magnet 132 are aligned, and the polarity of the cylindrical magnet of the inner layer magnet 131 and the polarity of the cylindrical magnet of the outer layer magnet 132 Instead, the inner layer magnet 131 and the outer layer magnet 132 form a magnetic circuit.
  • the cylindrical magnet S of the inner layer magnet 131 is fixed upwardly on the lower surface of the substrate 121, and the N-stage is directed downward toward the bottom wall 112 of the chamber body; the cylindrical magnet S of the outer layer 132 is oriented toward the bottom.
  • N-stage it is fixed to the lower surface of the substrate 121 toward the bottom wall 112 of the chamber body, N-stage upward.
  • it is also possible to reverse the above case that is, the cylindrical magnet N of the inner layer magnet 131 is directed upward, the S-stage is downward, and the cylindrical magnet N of the outer layer magnet 132 is directed downward, and the S-stage is upward.
  • the magnetic component 130 of the present embodiment forms a magnetic field which is mainly distributed above and below the magnetic component 130 and is located between the inner layer magnet 131 and the outer layer magnet 132. Since the magnetic component 130 corresponds to the edge region of the wafer, the magnetic field above the magnetic component 130 is also distributed over the edge region of the wafer. During the process, due to the presence of a magnetic field in the edge region of the wafer, a portion of the plasma is confined to the edge region, while the electric field component perpendicular to the magnetic field is also difficult to effectively couple into the plasma, and the plasma density at the edge of the wafer is reduced.
  • the magnetic component 130 is made of N38SH or N40SH, and the magnetic component 130 of these materials can withstand a high temperature of 150 ° C and can be used in a vacuum environment.
  • the inner and outer magnets are located outside the process area, which are not in contact with the plasma and are not corroded by plasma.
  • the diameter W of the inner layer magnet 131 may be slightly larger than the diameter of the wafer, and the radial distance h between the inner layer magnet 131 and the outer layer magnet 132 may preferably be less than 30 mm. Within the above size range, the diameter W of the inner layer magnet 131 and the radial distance h between the inner layer magnet 131 and the outer layer magnet 132 can be adjusted. In addition, magnets of different magnetic field strengths can be selected. By adjusting the diameter W of the inner layer magnet 131, the radial spacing h of the inner layer magnet 131 and the outer layer magnet 132, and the magnetic field strength of the magnet, the etching rate of the edge of the wafer can be controlled.
  • the process chamber 100 further includes a support assembly 140 that includes a base 141 and a focus ring 142.
  • the focus ring 142 is coupled to the base 141 and surrounds the outer peripheral wall of the base 141.
  • the base 141 includes a support disk 141a and an insulating disk 141b.
  • the support disk 141a is for supporting the wafer.
  • the insulating disk 141b serves to insulate the support disk 141a from the inner liner 120.
  • the focus ring 142 prevents the wafer from slipping out of the support disk 141a and confines the plasma above the support assembly 140, thereby acting to suppress the fringe field effect.
  • the support assembly 140 is disposed on a surface of the backing 121 facing away from the bottom wall 112 of the chamber body 110, and more specifically, the insulating disk 141b and the support disk 141a are sequentially disposed on the substrate 121.
  • the magnetic component 130 is disposed on a surface of the bottom plate 121 facing the bottom wall 112 of the chamber body 110, and the magnetic component 130 corresponds to an edge region of the support assembly 140 such that a magnetic field is distributed at an edge portion of the base 141 and a focus ring The area where 142 is located.
  • the radial distance h between the inner layer magnet 131 and the outer layer magnet 132 is about the distance between the support disk 141a and the inner layer magnet 131, that is, the upper surface of the support disk 141a to the lower surface of the substrate 121.
  • the distance a, a is preferably less than 30 mm.
  • the diameter W of the inner layer magnet 131 and the radial distance h between the inner layer magnet 131 and the outer layer magnet 132 can be adjusted.
  • the inner layer magnet 131 is located below the edge of the support disk 141a and the insulating disk 141b, and the outer layer magnet 132 is located below the focus ring 142.
  • FIG. 3 the inner layer magnet 131 is located below the edge of the support disk 141a and the insulating disk 141b, and the outer layer magnet 132 is located below the focus ring 142.
  • the inner layer magnet 131 is located below the focus ring 142, and the outer layer magnet 132 is located outside the focus ring 142, and the diameter W of the inner layer magnet 131 is larger than the diameter of the wafer.
  • magnets of different magnetic field strengths can be selected. By adjusting the diameter W of the inner layer magnet 131, the radial distance h between the inner layer magnet 131 and the outer layer magnet 132, and the magnetic field strength of the magnet, the edge of the wafer can be controlled. Erosion rate.
  • the support disk 141a may be made of a metal material, and aluminum is usually used. In order to prevent the metal support disk 141a from being plasma-etched to contaminate the wafer, the support disk 141a is slightly smaller in size than the wafer, that is, the diameter of the support disk 141a is smaller than the wafer diameter.
  • the insulating disk 141b may be made of an insulating material such as ceramic. All the components except the support disk 141a are in good contact with the ground.
  • the support assembly 140 further includes a bellows 143 disposed between the bottom wall 112 of the chamber body 110 and the substrate 121 for supporting the substrate 121 and driving the substrate 121 . Lifting.
  • the process chamber 100 further includes a homogenization plate 150, a matcher 160, and a radio frequency power source 170.
  • the homogenizing plate 150 may be disposed on the top surface of the top liner 122 to make the gas distribution into the process region S by the air inlet (not shown) more uniform.
  • the RF power source 170 is electrically coupled to the support assembly 140 via the matcher 160 to provide a radio frequency voltage to the support assembly 140.
  • the etching rate of the edge of the wafer can be effectively reduced, and the gap between the etching rate and the central region of the wafer can be reduced, thereby improving the etching uniformity of the wafer.
  • the edge electric field effect problem is solved, and the etching by-product is not deposited on the inner side of the focus ring, which can ensure the stability of the process for a long time.
  • the inner layer magnet 131 and the outer layer magnet 132 are concentric annular magnets, and the inner ring has a polarity opposite to that of the outer ring magnet.
  • the S pole of the inner ring magnet is fixed upward on the lower surface of the substrate 121, the N stage faces downward toward the bottom wall 112 of the chamber body 110; the S pole of the outer ring magnet faces downward toward the bottom wall 112 of the chamber body 110.
  • the N-stage is fixed upward on the lower surface of the substrate 121, or vice versa.
  • the magnetic assembly of the present embodiment can also improve the etching uniformity of the wafer, and the number of parts is small and easier to process with respect to the form of a plurality of cylindrical magnets.
  • the inner layer magnet 131 and the outer layer magnet 132 may not be a complete ring magnet, but may be an annular structure having a ring shape formed by a plurality of arc magnets equally spaced. There is no limit to the number of curved magnets, which also improves wafer etch uniformity.
  • the plasma device is a capacitively coupled plasma device, further a capacitively coupled plasma pre-cleaning device.
  • the plasma device can also be an inductively coupled plasma device.
  • ordinal numbers such as “first,” “second,” “third,” and the like, as used in the ⁇ Desc/Clms Page number>> It does not represent the order of one element and another element, or the order of the method of manufacture. The use of these ordinal numbers is only used to enable a component having a certain name to be clearly distinguished from another element having the same name.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention porte sur une chambre de traitement et sur un appareil à plasma à couplage capacitif. La chambre de traitement comprend un corps de chambre, un revêtement et un ensemble magnétique, le revêtement étant disposé à l'intérieur du corps de chambre et définissant et formant une zone de traitement pour traiter une tranche; et l'ensemble magnétique étant disposé à l'extérieur de la zone de traitement, et un champ magnétique généré par l'ensemble magnétique pouvant rétrécir l'espace entre le taux de gravure d'une zone périphérique de la tranche et le taux de gravure d'une zone centrale de celle-ci pendant le processus de traitement de la tranche.
PCT/CN2018/105968 2017-09-27 2018-09-17 Chambre de traitement et appareil à plasma à couplage capacitif WO2019062573A1 (fr)

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CN201710893855.5A CN107578977A (zh) 2017-09-27 2017-09-27 反应腔室以及电容耦合等离子体设备
CN201710893855.5 2017-09-27

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US11715627B2 (en) 2018-08-01 2023-08-01 Beijing Naura Microelectronics Equipment Co., Ltd. Reaction chamber and plasma apparatus
CN108987237B (zh) * 2018-08-01 2024-06-21 北京北方华创微电子装备有限公司 反应腔室以及等离子体设备
CN111383888B (zh) * 2018-12-27 2022-03-11 江苏鲁汶仪器有限公司 等离子体刻蚀机
CN110289200B (zh) * 2019-07-01 2022-11-25 北京北方华创微电子装备有限公司 内衬组件及工艺腔室
CN113808898B (zh) * 2020-06-16 2023-12-29 中微半导体设备(上海)股份有限公司 耐等离子体腐蚀零部件和反应装置及复合涂层形成方法
KR102327270B1 (ko) * 2020-12-03 2021-11-17 피에스케이 주식회사 지지 유닛, 기판 처리 장치, 그리고 기판 처리 방법
CN113049882B (zh) * 2021-03-12 2022-04-19 西南大学 一种载有环形缝隙的衬底集成波导重入式谐振腔微波传感器
CN114300334B (zh) * 2021-11-22 2023-11-14 北京北方华创微电子装备有限公司 工艺腔室及半导体工艺设备
CN114354653B (zh) * 2021-12-22 2023-08-01 杭州电子科技大学 基于改进开口谐振环的高灵敏度微波微流控传感器
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CN107578977A (zh) 2018-01-12
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