WO2015085882A1 - Appareil d'électrode inférieure et dispositif de traitement par plasma - Google Patents

Appareil d'électrode inférieure et dispositif de traitement par plasma Download PDF

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Publication number
WO2015085882A1
WO2015085882A1 PCT/CN2014/092875 CN2014092875W WO2015085882A1 WO 2015085882 A1 WO2015085882 A1 WO 2015085882A1 CN 2014092875 W CN2014092875 W CN 2014092875W WO 2015085882 A1 WO2015085882 A1 WO 2015085882A1
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WO
WIPO (PCT)
Prior art keywords
electric field
carrier
field strength
lower electrode
adjusting portion
Prior art date
Application number
PCT/CN2014/092875
Other languages
English (en)
Chinese (zh)
Inventor
张璐
张彦召
陈鹏
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Publication of WO2015085882A1 publication Critical patent/WO2015085882A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means

Definitions

  • a lower electrode device comprising a carrier for carrying a workpiece to be processed, the carrier being made of a conductive material, and an electric field strength adjusting portion formed on an upper surface of the carrier
  • the position of the electric field strength adjusting portion corresponds to a compensation region of the electric field strength of the upper surface of the carrier, and the expression form of the electric field strength adjusting portion corresponds to the compensation direction of the electric field strength.
  • the electric field strength of the region can be changed to compensate for the difference in electric field strength between the region and other regions of the upper surface of the carrier 201, thereby enabling plasma
  • the distribution of different regions on the upper surface of the carrier member 201 tends to be uniform, thereby improving the uniformity of the process and improving the process results.
  • the concave portion can increase the electric field strength of the region in which it is located, and conversely, the concave portion can reduce the electric field strength of the region in which it is located.
  • the concave portion and the convex portion are simultaneously provided on the upper surface of the carrier member, the height difference between the region corresponding to the convex portion and the region where the concave portion is located can be increased on the upper surface of the carrier member, thereby increasing the adjustment range of the electric field strength. .
  • the coil RF power supply 409 provides RF power to the inductive coupling coil 407 to ionize the process gas entering the reaction chamber 401 to form a plasma; the lower electrode RF power source 403 passes through the lower electrode assembly 405. Energy is coupled into the reaction chamber 401 to produce a negative bias electric field that is perpendicular to the upper surface of the lower electrode assembly 405 and directed toward the lower electrode assembly 405, thereby attracting the plasma etch to the lower electrode assembly 405.
  • the workpiece 406 is machined.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention porte sur un appareil d'électrode inférieure et sur un dispositif de traitement par plasma. L'appareil d'électrode inférieure comprend un élément de support (201) pour porter une pièce à travailler usinée (206). L'élément de support (201) est fabriqué en utilisant un matériau conducteur, et une partie de réglage d'intensité du champ électrique (202) est formée sur une surface supérieure de l'élément de support (201) ; l'emplacement de la partie de réglage d'intensité du champ électrique (202) correspond à une région de compensation pour l'intensité du champ électrique sur la surface supérieure de l'élément de support (201), et une manifestation de la partie de réglage d'intensité du champ électrique (202) correspond à une direction de compensation de l'intensité du champ électrique. Grâce à des différences de hauteur entre des régions sur la surface supérieure de l'élément de support (201), c'est-à-dire des distances différentes depuis des emplacements sur la surface supérieure de l'élément de support vers la masse, des intensités de champ électrique de différentes régions sur la surface supérieure de l'élément de support (201) sont réglées, et des différences entre des intensités de champ électrique des régions sont compensées, de telle sorte qu'une distribution de plasmas par rapport à différentes régions de la pièce à travailler usinée (206) portée sur la surface supérieure de l'élément de support (201) tend à être uniforme, améliorant ainsi l'uniformité et le résultat du traitement.
PCT/CN2014/092875 2013-12-13 2014-12-03 Appareil d'électrode inférieure et dispositif de traitement par plasma WO2015085882A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201310685502.8 2013-12-13
CN201310685502 2013-12-13
CN201410163430.5A CN104715996B (zh) 2013-12-13 2014-04-22 下电极装置以及等离子体加工设备
CN201410163430.5 2014-04-22

Publications (1)

Publication Number Publication Date
WO2015085882A1 true WO2015085882A1 (fr) 2015-06-18

Family

ID=53370615

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/092875 WO2015085882A1 (fr) 2013-12-13 2014-12-03 Appareil d'électrode inférieure et dispositif de traitement par plasma

Country Status (3)

Country Link
CN (1) CN104715996B (fr)
TW (1) TW201523683A (fr)
WO (1) WO2015085882A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3136419B1 (fr) * 2015-08-31 2018-04-18 Total S.A. Appareil de génération de plasma et procédé de fabrication de dispositifs à motifs à l'aide d'un traitement plasma à résolution spatiale
CN106711061B (zh) * 2015-11-18 2019-11-29 北京北方华创微电子装备有限公司 承载装置及反应腔室
CN106783722B (zh) * 2015-11-19 2019-11-29 北京北方华创微电子装备有限公司 承载装置及半导体加工设备
CN106816354B (zh) * 2015-12-02 2019-08-23 北京北方华创微电子装备有限公司 一种下电极和反应腔室
CN106929828B (zh) * 2017-05-12 2023-05-23 中国工程物理研究院应用电子学研究所 一种用于微波等离子体化学气相沉积法制备金刚石膜的基片台
CN107610999A (zh) * 2017-08-28 2018-01-19 北京北方华创微电子装备有限公司 下电极机构及反应腔室
CN207743194U (zh) * 2018-01-03 2018-08-17 惠科股份有限公司 一种陶瓷结构、下电极及干蚀刻机
CN111441037B (zh) * 2019-03-08 2024-05-14 上海征世科技股份有限公司 一种用于微波等离子体沉积金刚石膜装置中的刀具托盘
CN110117781A (zh) * 2019-04-08 2019-08-13 深圳市华星光电技术有限公司 极板间距调节装置及调节设备
CN113718223A (zh) * 2021-08-27 2021-11-30 北京北方华创微电子装备有限公司 下电极装置及半导体工艺设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246368A (ja) * 2001-02-14 2002-08-30 Anelva Corp ウェハー表面径方向均一プラズマを用いるウェハー処理システム
CN101477944A (zh) * 2003-02-03 2009-07-08 日本奥特克株式会社 等离子体处理装置及其使用的电极和电极制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102243976B (zh) * 2010-05-14 2013-07-17 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体加工设备
CN102154630A (zh) * 2010-09-30 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体反应腔室及其设备、部件的制造方法和处理基片的方法
CN103187348A (zh) * 2011-12-31 2013-07-03 北京北方微电子基地设备工艺研究中心有限责任公司 晶片固定装置、半导体设备和晶片固定方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246368A (ja) * 2001-02-14 2002-08-30 Anelva Corp ウェハー表面径方向均一プラズマを用いるウェハー処理システム
CN101477944A (zh) * 2003-02-03 2009-07-08 日本奥特克株式会社 等离子体处理装置及其使用的电极和电极制造方法

Also Published As

Publication number Publication date
CN104715996A (zh) 2015-06-17
CN104715996B (zh) 2018-04-06
TW201523683A (zh) 2015-06-16

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