WO2019062323A1 - 光伏组件 - Google Patents

光伏组件 Download PDF

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Publication number
WO2019062323A1
WO2019062323A1 PCT/CN2018/098238 CN2018098238W WO2019062323A1 WO 2019062323 A1 WO2019062323 A1 WO 2019062323A1 CN 2018098238 W CN2018098238 W CN 2018098238W WO 2019062323 A1 WO2019062323 A1 WO 2019062323A1
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Prior art keywords
cell
photovoltaic module
battery
diode
lead
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PCT/CN2018/098238
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English (en)
French (fr)
Inventor
郁操
龙永灯
胡德政
李沅民
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君泰创新（北京）科技有限公司
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Publication of WO2019062323A1 publication Critical patent/WO2019062323A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/049—Protective back sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30—Electrical components
    • H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the present disclosure relates to the field of solar cell technology, for example, to a photovoltaic module.
  • Solar cells also known as “solar chips” or “photovoltaic cells,” are photovoltaic semiconductor wafers that use solar light to generate electricity directly. As long as it is illuminated by a certain illumination condition, it can output voltage in an instant and generate current in the presence of a loop.
  • the principle of the current generated by the solar cell is that the sun shines on the semiconductor pn junction to form a new hole-electron pair. Under the action of the electric field built in the pn junction, the photogenerated hole flows to the p region, and the photogenerated electron flows to the n region, and the circuit is turned on. After that, a current is generated.
  • the photovoltaic module includes a plurality of battery strings connected in series, each battery string includes a plurality of battery cells connected in series, and is exemplified by a photovoltaic module including 60 battery cells, which generally includes six battery strings, each battery string. Includes 10 battery packs. Usually, six battery strings are connected in series to one external junction box, or two battery strings are connected in series to one external junction box.
  • the junction box is usually disposed outside the laminate of the photovoltaic module to connect the battery string to the external line.
  • the junction box also contains a bypass diode. When any of the battery strings in parallel with the bypass diode has a problem such as a split, it is equivalent to disconnection inside all the battery strings in parallel with the bypass diode, resulting in a disconnection. Failure, which has a great impact on the power generation efficiency of photovoltaic modules, however, the cost and process difficulty are increased when a bypass diode is provided for each cell by means of a junction box.
  • the present disclosure provides a photovoltaic module that can solve the problem of increasing cost and process difficulty when a bypass diode is provided for each cell by means of a junction box in the related art.
  • a photovoltaic module comprising:
  • a plurality of cells, wires, the plurality of cells are connected in series by wires, diodes, one diode in parallel with each cell, or a plurality of adjacent cells as a whole in parallel with one diode; and a package structure, the cell The wire and the diode are disposed in the package structure.
  • the diode comprises: a PN junction, a positive lead and a negative lead, the first end of the positive lead is connected to the positive pole of the cell, the second end of the positive lead is connected to the positive pole of the PN junction, and the negative lead is One end is connected to the negative electrode of the cell sheet, and the second end of the negative electrode lead is connected to the negative electrode of the PN junction.
  • the battery chip comprises at least one of the following:
  • Heterojunction cells polycrystalline silicon cells, and monocrystalline silicon cells.
  • the heterojunction cell sheet is an amorphous silicon/monocrystalline silicon heterojunction cell sheet.
  • the wire is a solder ribbon
  • the battery chip is soldered to the solder ribbon.
  • the positive electrode lead and the negative electrode lead are tin-coated copper sheets.
  • the tin-coated copper sheet has a width of 0.5 mm to 5 mm, and the tin-coated copper sheet has a thickness of 0.01 mm to 0.4 mm.
  • the adjacent first cell and the second cell are connected in parallel as a whole with a diode, the positive lead is soldered on the solder ribbon on the back side of the first cell, and the negative lead is soldered in the first The solder strip on the back side of the two cell sheets.
  • the positive lead is soldered to a strip of the first cell
  • the negative lead is soldered to a strip of the second cell
  • the surface area of the PN junction is N square millimeters, wherein N is greater than zero and less than or equal to 9, and is located in a gap between adjacent first and second battery sheets.
  • an insulating layer is further disposed between the cell sheet and the PN junction.
  • the package structure includes, in order from the first side to the second side, a glass layer, a first solar cell encapsulation film, a second solar cell encapsulation film, and a back sheet layer, wherein the battery The sheet, the wire, and the diode are disposed between the first solar cell encapsulation film and the second solar cell encapsulation film.
  • At least one of the first solar cell encapsulant film and the second solar cell encapsulation film is an ethylene-vinyl acetate copolymer EVA layer or polyvinyl butyral PVB.
  • each of the cells in the battery string at the edge of the photovoltaic cell is connected in parallel with a diode, and a specified number of adjacent cells of the battery string at the edges other than the edge are connected in parallel as a single diode.
  • the photovoltaic module provided by the present disclosure realizes configuring a bypass diode for each cell, and since the thickness of the PN junction is very thin, the thickness of the photovoltaic component is not increased without increasing the cost and process difficulty, and in a specific When the battery fails, the faulty battery is short-circuited by the bypass diode instead of shorting the entire battery, which helps to improve power generation efficiency.
  • FIG. 1 is a first schematic structural view of a photovoltaic module according to an embodiment
  • FIG. 2 is a second schematic structural view of a photovoltaic module according to another embodiment
  • FIG. 3 is a third structural schematic diagram of a photovoltaic module provided in accordance with another embodiment.
  • FIG. 1 a first schematic structural view of a photovoltaic module according to an embodiment is provided.
  • the photovoltaic module may include: a battery sheet 1, a wire 2, a diode 3, and a package structure.
  • the plurality of battery sheets 1 are connected in series by a wire 2, and the first end of the wire is connected to the positive electrode of a battery piece, and the wire is The two ends are connected to the negative electrode of the other battery piece, and each of the battery pieces 1 is connected in parallel with a diode 3, the battery piece 1, the wire 2 and the diode 3 are disposed in the package structure;
  • the diode 3 includes: PN
  • the junction 31, the positive electrode lead 32 and the negative electrode lead 33, the PN junction 31 can be selected according to actual use requirements, for example, in order to adapt to the similar thickness of the substrate of the battery sheet 1, or directly adopt the common PN junction model of the market to avoid Increase the accommodation space after the PN connection.
  • the first end of the positive electrode lead 32 is connected to the positive electrode of the battery sheet 1, the second end of the positive electrode lead 32 is connected to the positive electrode of the PN junction 31, and the negative electrode lead 33 is connected.
  • the first end is connected to the negative electrode of the battery chip 1, and the second end of the negative electrode lead 33 is connected to the negative electrode of the PN junction 31.
  • the number of the battery sheets 1 may be determined according to the output voltage of the designed photovoltaic module. For example, the output voltage of the single battery chip 1 is 0.5V, and the output voltage of the designed photovoltaic module is 5V, then 10 battery cells may be connected in series.
  • the number of diodes 3 can be determined according to the design.
  • each of the battery sheets 1 is connected in parallel with one diode 3, and only the battery sheet 1 is short-circuited, and the other battery sheets 1 can still be stabilized.
  • the output voltage when it is required to realize: after any one of the battery sheets 1 fails, each of the battery sheets 1 is connected in parallel with one diode 3, and only the battery sheet 1 is short-circuited, and the other battery sheets 1 can still be stabilized. The output voltage.
  • the battery sheet 1 includes at least one of the following: a heterojunction cell sheet, a polycrystalline silicon cell sheet, and a monocrystalline silicon cell sheet.
  • the most important parameter for solar cells is conversion efficiency. In the silicon-based solar cells developed by the laboratory, the efficiency of single crystal silicon cells is 25.0%, the efficiency of polycrystalline silicon cells is 20.4%, and the efficiency of CIGS thin film cells is 19.6%. CdTe The efficiency of the thin film battery was 16.7%, and the efficiency of the amorphous silicon (amorphous silicon) thin film battery was 10.1%.
  • the heterojunction cell is an amorphous silicon/a single crystal silicon (a-Si/c-Si) heterojunction cell (Silicon Hetero-junction Solar Cell, SHJ cell), and an SHJ cell.
  • a-Si/c-Si amorphous silicon/a single crystal silicon
  • SHJ cell Silicon Hetero-junction Solar Cell
  • SHJ cell amorphous silicon/a single crystal silicon
  • the forward voltage of the PN junction 31 should be higher than the voltage output by the single cell 1, for example, the output voltage of the cell 1 is 0.6V, PN junction.
  • the forward conduction voltage of 31 is 0.7V.
  • the wire 2 may be a wire such as a copper wire or an aluminum wire, or may be a special welding tape or the like.
  • the wire 2 is a solder ribbon and the cell sheet 1 is soldered to the ribbon.
  • the positive electrode lead 32 and the negative electrode lead 33 are a tin-coated copper sheet.
  • the tin-coated copper sheet may have a width of 0.5 mm to 5 mm, and the tin-coated copper sheet has a thickness of 0.01 mm to 0.4 mm.
  • the number of the battery sheets 1 included in each battery string in the photovoltaic module is 10 or 12
  • the width of the tin-coated copper sheet may be 3 mm
  • the thickness of the tin-coated copper sheet is 0.3 mm.
  • the positive electrode lead 32 and the negative electrode lead 33 are respectively soldered to the solder ribbon on the back surface of the two battery sheets 1.
  • the photovoltaic module provided in this embodiment comprises: a battery sheet 1, a wire 2 and a diode 3.
  • the plurality of battery sheets 1 are connected in series by wires 2, and each of the battery sheets 1 or a predetermined number of adjacent battery sheets 1 as a whole is connected in parallel with a diode. 3.
  • the battery sheet 1, the wire 2 and the diode 3 are disposed in the package structure.
  • the diode 3 includes a PN junction 31, a positive electrode lead 32, and a negative electrode lead 33
  • the first end of the positive electrode lead 32 is connected to the positive electrode of the battery chip 1
  • the second end of the positive electrode lead 32 is connected to the positive electrode of the PN junction 31, and the negative electrode
  • the first end of the lead 33 is connected to the negative electrode of the battery chip 1
  • the second end of the negative lead 33 is connected to the negative electrode of the PN junction 31, so that each of the battery sheets 1 is provided with a bypass diode, and since the PN junction 31
  • the thickness is very thin and the cost is low, which does not increase the thickness of the photovoltaic module and does not increase the cost and process difficulty.
  • FIG. 2 it is a second structural schematic diagram of a photovoltaic module according to the present embodiment.
  • a plurality of adjacent cells may be connected as a whole, and a diode 3 may be connected in parallel.
  • This has the advantage of reducing the complexity of the photovoltaic module and effectively reducing the number of diodes 3, for example, two.
  • the adjacent cell sheets as a whole are connected in parallel with a diode 3, but there are also disadvantages in that a single failed cell 1 cannot be short-circuited, and two cells must be short-circuited at the same time, although one of the cells does not fail.
  • two adjacent battery sheets 1 are connected as a whole in parallel with one diode 3.
  • four or more adjacent battery sheets 1 may be connected as a whole, and one diode 3 may be connected in parallel, which will not be described in detail herein.
  • the forward conduction voltage of the PN junction 31 should be higher than the voltage outputted by a plurality of adjacent battery sheets 11 as a whole.
  • the positive electrode lead 32 may be soldered on the solder ribbon on the back side of the first battery sheet
  • the negative electrode lead 33 may be soldered on the solder ribbon on the back side of the second battery sheet
  • the positive lead 32 may be soldered
  • the strip of the battery piece 1 as a whole and the negative lead 33 are soldered to the strip of the other cell 1.
  • a battery sheet, a b battery sheet, a c battery sheet, and a d battery sheet are collectively included, and the positive electrode lead 32 is soldered on the positive electrode strip of the c battery sheet, and the negative electrode lead 33 is included.
  • the surface area of the PN junction 31 is several square millimeters, located in the gap between the adjacent two battery sheets 1, and the small size of the PN junction 31 is small, and the space is small.
  • the gap of the cell 1 can accommodate the PN, which avoids the extra space occupied by the bypass diode.
  • an insulating layer 34 is disposed between the battery sheet 1 and the PN junction 31, so that a short circuit condition can be prevented, for example, a resin or the like is filled between the battery sheet 1 and the PN junction 31.
  • the present embodiment can also prevent the diode from blocking the cell sheet 1 and reduce the area of the cell sheet 1 to receive light, thereby reducing power generation efficiency. risks of.
  • the package structure sequentially includes a glass layer 301 and a first ethylene-vinyl acetate copolymer (EVA) layer 302 from the first side to the second side. a second EVA layer 303 and a backing layer 304, wherein the battery sheet 1, the wire 2 and the diode 3 are disposed between the first EVA layer 302 and the second EVA layer 303.
  • the first EVA layer 302 and the second EVA layer 303 may also be other solar cell encapsulation films, such as a polyolefin elastomer (POE) film, or a PVB film (PolyVinyl Butyral Film, Polyvinyl butyral film) and the like.
  • POE polyolefin elastomer
  • PVB film PolyVinyl Butyral Film, Polyvinyl butyral film
  • the glass layer 301 may be tempered glass, and functions to protect a power generating body (such as a battery sheet).
  • the light transmission requirement is: 1.
  • the light transmittance must be high (generally 91% or more); 2. It has been ultra-white. Tempered.
  • an antireflection film such as a silicon oxide film of a specified thickness or the like may be plated on the surface of the tempered glass.
  • Photovoltaic cell encapsulation film including EVA, used to bond and fix tempered glass and power generation main body (such as battery sheet).
  • the quality of transparent plastic film material directly affects the life of the component and the encapsulation film exposed to the air (such as EVA or PVB, etc.) are susceptible to aging and yellowing, which affects the light transmittance of the component and thus affects the power generation quality of the component.
  • the lamination process is also very influential.
  • the viscosity of the encapsulation film is not up to standard, and the bonding strength between the encapsulation film and the tempered glass or the back sheet is insufficient, which will cause premature aging of the encapsulation film.
  • the life of the component is mainly bonded to the power generating body and the backing layer.
  • the back layer is mainly used for sealing, insulation and waterproofing (usually TPT or TPE, etc., the material must be resistant to aging or glass backing).
  • frames, sealants, and the like may also be included and will not be described in detail herein.
  • the photovoltaic module provided by an embodiment may include the first structure and the second structure described above, that is, in the photovoltaic module, a part of the plurality of battery sheets 1 may be a diode 3 in parallel with each of the battery sheets 1 and another One part is that a diode 3 is connected in parallel as a whole for a predetermined number of adjacent cell sheets 1.
  • each of the battery sheets 1 located at the edge of the photovoltaic module may be connected in parallel with a diode 3, and each of the specified number of adjacent battery sheets 1 at the non-edge is connected in parallel with one diode 3, for example, every two, three One or more cells 1 are connected in parallel with a diode 3.
  • the photovoltaic module is an amorphous silicon/monocrystalline silicon heterojunction cell sheet, and the crystalline silicon/monocrystalline silicon heterojunction cell has a low temperature coefficient and high environmental stability.
  • the characteristics of double-sided power generation make the actual outdoor power generation more than 25% higher than that of traditional crystalline silicon batteries, effectively improving energy conversion efficiency.
  • the wire is a solder ribbon, and the battery piece is soldered to the solder ribbon, and the strength and reliability of the connection are better.
  • the positive electrode lead and the negative electrode lead are tin-coated copper sheets, which can effectively reduce the connection resistance, and the stability of the wire is better.
  • the positive electrode lead and the negative electrode lead are respectively soldered on the solder ribbon on the back surface of the two battery sheets, which can effectively reduce the shielding of the front surface of the battery sheet and help improve the photoelectric conversion efficiency.
  • the PN junction has a surface area of several square millimeters and can be located in a gap between two adjacent cells, thereby avoiding an increase in the thickness of the photovoltaic module or the size of the battery, and improving integration.

Abstract

一种光伏组件，包括：多个电池片；导线，所述多个电池片通过所述导线串联；二极管，每个电池片并联一个二极管，或者指定个数相邻的电池片作为整体并联一个二极管；以及封装结构，所述电池片、所述导线和所述二极管设置在所述封装结构中。

Description

光伏组件
本申请主张申请日为2017年9月27日，在中国提交的申请号为201721253462.X的专利申请的优先权，其全部内容都引用在本申请中。
技术领域
本公开涉及太阳能电池技术领域，例如涉及一种光伏组件。
背景技术
太阳能电池又称为“太阳能芯片”或“光伏电池”，是一种利用太阳光直接发电的光电半导体薄片。它只要被满足一定照度条件的光照到，瞬间就可输出电压及在有回路的情况下产生电流。太阳能电池产生电流的原理为太阳光照在半导体p-n结上，形成新的空穴-电子对，在p-n结内建电场的作用下，光生空穴流向p区，光生电子流向n区，接通电路后就产生电流。
光伏组件包括多个串联的电池串，每个电池串包括多个串联的电池片，以包含60个电池片的光伏组件为例进行说明，该光伏组件通常包括6个电池串，每个电池串包括10个电池片。通常6个电池串串联在一起外接一个接线盒，或者每两个电池串串联在一起外接一个接线盒，该接线盒通常设置在光伏组件的层压板外，将电池串与外部线路连接。接线盒内还包含一个旁路二极管，当与旁路二极管并联的电池串中的任何一个电池片出现裂片等问题时，就相当于与旁路二极管并联的所有电池串内部发生了断线，导致失效，从而对光伏组件的发电效率影响很大，然而通过接线盒的方式为每个电池片配备一个旁路二极管时，会增加成本及工艺难度。
发明内容
本公开提供一种光伏组件，可以解决通过相关技术中接线盒的方式为每个电池片配备一个旁路二极管时，会增加成本及工艺难度的问题。
一种光伏组件，包括：
多个电池片，导线，所述多个电池片通过导线串联，二极管，每个电池片并联一个二极管，或指定个数相邻的电池片作为整体并联一个二极管；以及封装结构，所述电池片、所述导线和所述二极管设置在所述封装结构中。
在一实施例中，所述二极管包括：PN结、正极引线和负极引线，正极引线的第一端与电池片的正极相连，正极引线的第二端与PN结的正极相连，负极引线的第一端分别与电池片的负极相连，负极引线的第二端与PN结的负极相连。
在一实施例中，所述电池片包括以下至少一种：
异质结电池片、多晶硅电池片和单晶硅电池片。
在一实施例中，所述异质结电池片为非晶硅/单晶硅异质结电池片。
在一实施例中，所述导线为焊带，所述电池片与所述焊带之间焊接连接。
在一实施例中，所述正极引线和所述负极引线为包锡铜片。
在一实施例中，所述包锡铜片的宽度为0.5mm至5mm，所述包锡铜片的厚度为0.01mm至0.4mm。
在一实施例中，相邻的第一电池片和第二电池片作为整体并联一个二极管，所述正极引线焊接在第一电池片的背面的所述焊带上，所述负极引线焊接在第二电池片的背面的所述焊带上。
在一实施例中，所述正极引线焊接在第一电池片的一根焊带上，所述负极引线焊接在第二电池片的一根焊带上。
在一实施例中，所述PN结的表面积为N平方毫米，其中，N大于0小于等于9，且位于相邻的第一电池片和第二电池片之间的间隙中。
在一实施例中，还包括绝缘层，设置在所述电池片与所述PN结之间。
在一实施例中，所述封装结构从第一侧到第二侧依序包括：玻璃层、第一太阳能电池封装胶膜、第二太阳能电池封装胶膜和背板层，其中，所述电池片、所述导线和所述二极管设置在所述第一太阳能电池封装胶膜与第二太阳能电池封装胶膜之间。
在一实施例中，第一太阳能电池封装胶膜和第二太阳能电池封装胶膜中的至少一个为乙烯-醋酸乙烯酯共聚物EVA层或者聚乙烯醇缩丁醛PVB。
在一实施例中，位于光伏电池边缘的电池串中的每个电池片并联一个二极管，位于除边缘处之外的电池串的指定数量的相邻电池片作为一个整体并联一个二极管。
本公开提供的光伏组件，实现了为每个电池片配置一个旁路二极管，且由于PN结的厚度很薄，不会增加光伏组件的厚度且不会增加成本及工艺难度，并在一个特定的电池片故障时通过旁路二极管短路掉该故障电池片，而非将 整串电池片短路掉，有助于提升发电效率。
附图说明
图1为根据一实施例所提供的光伏组件的第一种结构示意图；
图2为根据另一实施例所提供的光伏组件的第二种结构示意图；
图3为根据另一实施例所提供的光伏组件的第三种结构示意图。
附图标记：
在图1-图3中：
1     电池片              31    PN结
2     导线                32    正极引线
3     二极管              33    负极引线
34    绝缘层              301   玻璃层
302   第一EVA层           303   第二EVA层
304   背板层
具体实施方式
如图1所示，为根据一实施例所提供的光伏组件的第一种结构示意图。
在本实施例中，该光伏组件可以包括：电池片1、导线2、二极管3和封装结构，多个电池片1通过导线2串联，导线的第一端连接一个电池片的正极，导线的第二端连接另一电池片的负极，每个电池片1并联一个二极管3，所述电池片1、所述导线2和所述二极管3设置在所述封装结构中；所述二极管3包括：PN结31、正极引线32和负极引线33，PN结31可以根据实际使用需求而选择不同的型号，例如，为了适应于电池片1的基板相近的厚度，或者直接采用市面常见的PN结型号从而避免增加PN连接后的容置空间。因PN结31尺寸小，所需容置空间较小，正极引线32的第一端与电池片1的正极相连，所述正极引线32的第二端和PN结31的正极相连，负极引线33的第一端与电池片1的负极相连，负极引线33的第二端与PN结31的负极相连。其中，电池片1的个数可以根据设计的光伏组件输出电压而定，例如，单个电池片1的输出电压为0.5V，设计的光伏组件输出电压为5V，则串联10个电池片即可。二极管3的个数可以根据设计而定，例如，当需要实现：任何一个电池片1失效后，则每个电池片1并联一个二极管3，仅短路该电池片1， 其它电池片1依然可以稳定输出电压。
其中，所述电池片1包括以下至少一种：异质结电池片、多晶硅电池片和单晶硅电池片。对于太阳电池来说最重要的参数是转换效率，在实验室所研发的硅基太阳能电池中，单晶硅电池效率为25.0％，多晶硅电池效率为20.4％，CIGS薄膜电池效率达19.6％，CdTe薄膜电池效率达16.7％，非晶硅(无定形硅)薄膜电池的效率为10.1％。在一实施例中，所述异质结电池片为非晶硅/单晶硅(a-Si/c-Si)异质结电池片(Silicon Hetero-junction Solar Cell，SHJ电池)，SHJ电池片是一种利用晶体硅和非晶硅薄膜制成的混合型太阳电池，它具有制备工艺温度低，转换效率高以及高温特性好等特点，是一种低价高效电池。该电池的实验室转换效率已达到23％，且理论分析该电池结构的转换效率可以超过25％。
在一实施例中，当每个电池片1并联一个二极管3时，PN结31的正向导通电压应当高于单个电池片1输出的电压，例如电池片1的输出电压为0.6V，PN结31的正向导通电压为0.7V。
在一实施例中，所述导线2可以为铜线或铝线等导线，还可以为专用的焊带等。在一实施例中，所述导线2为焊带，电池片1与焊带之间焊接连接。所述正极引线32和所述负极引线33为包锡铜片。该包锡铜片的宽度可以为0.5mm至5mm，所述包锡铜片的厚度为0.01mm至0.4mm。
在一个实施例中，光伏组件中每个电池串所包括的所述电池片1的个数为10个或12个，包锡铜片的宽度可以为3mm，包锡铜片的厚度为0.3mm，所述正极引线32和所述负极引线33分别焊接在两个电池片1的背面的所述焊带上。
本实施例提供的光伏组件，包括：电池片1、导线2和二极管3，多个电池片1通过导线2串联，每个电池片1或指定个数相邻的电池片1作为整体并联一个二极管3。所述电池片1、所述导线2和所述二极管3设置在所述封装结构中。由于所述二极管3包括：PN结31、正极引线32和负极引线33，正极引线32的第一端与电池片1的正极相连，正极引线32的第二端与PN结31的正极相连，负极引线33的第一端与电池片1的负极相连，负极引线33的第二端与PN结31的负极相连，这样就实现了为每个电池片1配置一个旁路二极管，且由于PN结31的厚度很薄且成本较低，不会增加光伏组件的厚度且不会增加成本及工艺难度。
如图2所示，为根据本实施例所提供的光伏组件的第二种结构示意图。在本实施例中，也可以以数个相邻的电池片作为整体，并联一个二极管3，这样做的好处是可以降低光伏组件的复杂度，有效减少了二极管3的数量，例如，以两个相邻的电池片作为整体，并联一个二极管3，但是同样也存在缺点：不能实现短路掉单个失效电池片1，必须同时短路掉2个电池片，尽管其中一个电池片未失效。
本实施例列举了2个相邻的电池片1作为整体并联一个二极管3，此外也可以在4个或更多相邻的电池片1作为整体，并联一个二极管3，在此不再详述。当数个相邻的电池片1作为整体并联一个二极管3时，PN结31的正向导通电压应当高于数个相邻的电池片11作为整体输出的电压。
其中，所述正极引线32可以焊接在第一电池片的背面的所述焊带上，所述负极引线33可以焊接在第二电池片的背面的焊带上，或者所述正极引线32焊接在以数个电池片1为整体的焊带上及所述负极引线33焊接在另一个电池片1的焊带上。例如，如图2中共包含a电池片、b电池片、c电池片以及d电池片共4个电池片1，所述正极引线32焊接在c电池片正极的焊带上，所述负极引线33焊接在b电池片负极的焊带上，所述PN结31的表面积为数平方毫米，位于相邻的两个电池片1之间的间隙中，而由于PN结31尺寸小，占用空间小，利用电池片1的间隙即可容置PN，这样可以避免旁路二极管额外占用空间。此外，参见图3，所述电池片1与所述PN结31之间设置绝缘层34，这样可以避免短路情况发生，例如在所述电池片1与所述PN结31之间填充树脂等。
若电池片1为异质结太阳能电池，由于异质结太阳能电池是双面发光电池，利用本实施例，还可以避免二极管遮挡电池片1，降低电池片1接受光的面积，从而降低发电效率的风险。
在一个实施例中，参见图3，所述封装结构从第一侧到第二侧依序包括：玻璃层301、第一乙烯-醋酸乙烯酯共聚物(ethylene-vinyl acetate copolymer，EVA)层302、第二EVA层303和背板层304，其中，所述电池片1、所述导线2和所述二极管3设置在所述第一EVA层302与第二EVA层303之间。在一些实施例中，所述第一EVA层302与第二EVA层303还可以是其他太阳能电池封装胶膜，例如聚烯烃弹性体(Polyolefin elastomer，POE)膜，或者PVB膜(PolyVinyl Butyral Film，聚乙烯醇缩丁醛薄膜)等。
在一实施例中，该玻璃层301可以为钢化玻璃，作用为保护发电主体(如电池片)，透光要求：1.透光率必须高(一般91％以上)；2.已经过超白钢化处理。此外，还可以在钢化玻璃的表面上镀一层增透膜，例如指定厚度的二氧化硅薄膜等。光伏电池封装胶膜(包括EVA)，用来粘结固定钢化玻璃和发电主体(如电池片)，透明胶膜材质的优劣直接影响到组件的寿命，暴露在空气中的封装胶膜(如EVA或PVB等)易老化发黄，从而影响组件的透光率，从而影响组件的发电质量。除了封装胶膜本身的质量外，层压工艺影响也非常大，如封装胶膜胶粘度不达标，封装胶膜与钢化玻璃或背板粘接强度不够，都会引起封装胶膜提早老化，影响组件寿命，主要粘结封装发电主体和背板层。背板层，主要作用是密封、绝缘以及防水(一般都用TPT或TPE等，材质必须耐老化，也可以是玻璃背板)。此外，还可以包括框架和密封胶等，在此不再详述。
一实施例提供的光伏组件，可以是包括上述第一种结构和第二种结构，即在该光伏组件中，可以是多个电池片1中一部分是每个电池片1并联一个二极管3，另一部分是每指定个数相邻的电池片1作为整体并联一个二极管3。
在一实施例中，可以是位于光伏组件边缘的每个电池片1并联一个二极管3，位于非边缘处的每指定数量的相邻电池片1并联一个二极管3，例如可以是每两个，三个或者更多的电池片1并联一个二极管3。
一实施例提供的光伏组件，所述电池片为非晶硅/单晶硅异质结电池片，由于晶硅/单晶硅异质结电池片具有低的温度系数、高的环境稳定性以及双面发电等特性，使其实际户外发电量比传统晶硅电池高出25％左右，有效提升能源转化效率。
一实施例提供的光伏组件，所述导线为焊带，电池片与焊带之间焊接连接，连接的强度及可靠度更好。所述正极引线和所述负极引线为包锡铜片，可以有效降低连接电阻，且导线的稳定性更好。
一实施例提供的光伏组件，所述正极引线和所述负极引线分别焊接在两个电池片的背面的所述焊带上可以有效减小对电池片正面的遮挡，有助于提升光电转换效率。此外，所述PN结的表面积为数平方毫米，可以位于相邻的两个电池片之间的间隙中，这样可以避免增加光伏组件的厚度或电池的尺寸，提高集成度。

Claims (14)

  1. 一种光伏组件，包括：
    多个电池片(1)；
    导线(2)，所述多个电池片(1)通过所述导线(2)串联；
    二极管(3)，每个电池片(1)并联一个二极管(3)，或者指定个数相邻的电池片(1)作为整体并联一个二极管(3)；以及
    封装结构，所述电池片(1)、所述导线(2)和所述二极管(3)设置在所述封装结构中。
  2. 根据权利要求1所述的光伏组件，其中，所述二极管(3)包括：PN结(31)、正极引线(32)和负极引线(33)，正极引线(32)的第一端与电池片(1)的正极相连，正极引线(32)的第二端与PN结(31)的正极相连，负极引线(33)的第一端与电池片(1)的负极相连，负极引线(33)的第二端与PN结(31)的负极相连。
  3. 根据权利要求1或2所述的光伏组件，其中，所述电池片(1)包括以下至少一种：
    异质结电池片、多晶硅电池片和单晶硅电池片。
  4. 根据权利要求3所述的光伏组件，其中，所述异质结电池片为非晶硅/单晶硅异质结电池片。
  5. 根据权利要求1或2所述的光伏组件，其中，所述导线(2)为焊带，所述电池片(1)与所述焊带之间焊接连接。
  6. 根据权利要求5所述的光伏组件，其中，所述正极引线(32)和所述负极引线(33)为包锡铜片。
  7. 根据权利要求6所述的光伏组件，其中，所述包锡铜片的宽度为0.5mm至5mm，所述包锡铜片的厚度为0.01mm至0.4mm。
  8. 根据权利要求6所述的光伏组件，其中，相邻的第一电池片和第二电池片作为整体并联一个二极管(3)，所述正极引线(32)焊接在第一电池片的背面的所述焊带上，所述负极引线(33)焊接在第二电池片(1)的背面的所述焊带上。
  9. 根据权利要求6所述的光伏组件，其中，所述正极引线(32)焊接在第一电池片的一根焊带上，所述负极引线(33)焊接在第二电池片的一根焊带上。
  10. 根据权利要求9所述的光伏组件，其中，所述PN结(31)的表面积 为N平方毫米，其中，N大于0小于等于9，且位于相邻的两个电池片(1)之间的间隙中。
  11. 根据权利要求9所述的光伏组件，还包括绝缘层(34)，设置在所述电池片(1)与所述PN结(31)之间。
  12. 根据权利要求1至11任一项所述的光伏组件，其中，所述封装结构从第一侧到第二侧依序包括：
    玻璃层(301)、第一太阳能电池封装胶膜(302)、第二太阳能电池封装胶膜(303)和背板层(304)；
    其中，所述电池片(1)、所述导线(2)和所述二极管(3)设置在所述第一太阳能电池封装胶膜(302)与第二太阳能电池封装胶膜(303)之间。
  13. 根据权利要求12所述的光伏组件，第一太阳能电池封装胶膜(302)和第二太阳能电池封装胶膜(303)中的至少一个为乙烯-醋酸乙烯酯共聚物EVA或者聚乙烯醇缩丁醛PVB。
  14. 根据权利要求1所述的光伏组件，其中，所述电池片(1)包括位于所述光伏组件边缘区域的第一电池片和位于光伏电池非边缘的第二电池片；每个所述第一电池片并联一个二极管(3)，指定数量的相邻第二电池片作为一个整体并联一个二极管(3)。
PCT/CN2018/098238 2017-09-27 2018-08-02 光伏组件 WO2019062323A1 (zh)

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