WO2019062155A1 - 一种发光二极管阵列结构及显示装置 - Google Patents

一种发光二极管阵列结构及显示装置 Download PDF

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WO2019062155A1
WO2019062155A1 PCT/CN2018/087334 CN2018087334W WO2019062155A1 WO 2019062155 A1 WO2019062155 A1 WO 2019062155A1 CN 2018087334 W CN2018087334 W CN 2018087334W WO 2019062155 A1 WO2019062155 A1 WO 2019062155A1
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layer
array structure
light emitting
substrate
emitting diode
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French (fr)
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邢汝博
杨小龙
单奇
王建太
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Yungu Guan Technology Co Ltd
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Yungu Guan Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/695—Organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an LED array structure and a display device.
  • Micro-LED technology refers to the technology of integrating high-density LED (Light Emitting Diode) arrays in a small size, which can reduce the pixel distance from millimeters to micrometers when applied to the display field.
  • the display device self-illuminates, the optical system is simple, and the overall system volume, weight, and cost can be reduced, and at the same time, low power consumption and rapid response are taken into consideration.
  • the main object of the present invention is to provide an LED array structure and a display device, which aim to solve the problems of the prior art.
  • a first aspect of the embodiments of the present invention provides an LED array structure, the LED array structure includes a first substrate, a plurality of LEDs formed on the first substrate, and the LED The first substrate is filled with an elastic material, and/or an adjacent elastic material is filled between the adjacent light emitting diodes.
  • the elastic material comprises at least one of polyurethane, silicone rubber, and polyimide.
  • the light emitting diode comprises an electron layer, a light emitting layer, a hole layer and an electrode; the light emitting layer is formed between the electron layer and the hole layer.
  • the elastic material covers the electron layer, the light emitting layer and the hole layer.
  • the electron layer is an n-type GaN layer
  • the hole layer is a p-type GaN layer.
  • the electron layer is a p-type GaN layer
  • the hole layer is an n-type GaN layer.
  • the LED array structure further includes a buffer layer formed on the hole layer or the electron layer.
  • the buffer layer is disposed away from the light emitting layer.
  • the material of the buffer layer comprises at least one of aluminum nitride and gallium nitride.
  • the material of the first substrate comprises at least one of polyethylene terephthalate, polymethyl methacrylate, polyimide, polyurethane, and silicone rubber.
  • the LED array structure further includes a second substrate for bonding with the first substrate, and the second substrate includes a light conversion layer.
  • the second substrate is attached to a side of the first substrate where the light emitting diode is disposed.
  • a second aspect of the embodiments of the present invention provides a display device, which includes the LED array structure mentioned in any of the above embodiments.
  • the light-emitting diode array structure and the display device provided by the embodiments of the present invention achieve the purpose of using the elastic material as the stress release layer of the bending process of the flexible screen body by filling the elastic material between the light-emitting diode and the first substrate.
  • the bending resistance of the LED array structure is improved while preventing the damage of the brittle LED chip.
  • FIG. 1 is a schematic structural diagram of an LED array according to an embodiment of the present invention.
  • connection is disassembled or connected integrally; it may be a mechanical connection or an electrical connection; it may be directly connected, or may be indirectly connected through an intermediate medium, and may be internal communication between the two elements.
  • the specific meaning of the above terms in the present invention can be understood in the specific circumstances by those skilled in the art. Further, in the description of the present invention, “a plurality” and “a few” have two or more meanings unless otherwise stated.
  • a first embodiment of the present invention provides an LED array structure
  • the LED array structure includes a first substrate 11 , a plurality of LEDs 12 formed on the first substrate 11 , and a plurality of An elastic material 13 is filled between the light emitting diodes 12 and between the light emitting diodes 12 and the first substrate 11.
  • the material of the first substrate 11 may be selected from flexible organic materials such as polyethylene terephthalate, polymethyl methacrylate, polyimide, polyurethane, silicone rubber, and the like.
  • the number of kinds of materials included in the first substrate 11 is not limited.
  • the light emitting diode 12 includes an electron layer 122, a light emitting layer 123, a hole layer 124, and an electrode 121; the light emitting layer 123 is formed between the electron layer 122 and the hole layer 124.
  • the hole layer 124 is located away from the first substrate 11; when the hole layer 124 is close to the first substrate 11, The electronic layer 122 is located away from the first substrate 11 . That is, the positions of the electron layer 122 and the hole layer 124 in the light emitting diode array structure shown in FIG. 1 may be interchanged.
  • the elastic material 13 is only filled between the light emitting diode 12 and the first substrate 11, that is, the adjacent light emitting diodes 12 are no longer filled.
  • the elastic material 13 is described. It should be understood that the light emitting diode array structure provided by the embodiment can ensure the bend in comparison with the filling of the elastic material 13 between the light emitting diode 12 and the first substrate 11 and between the adjacent light emitting diodes 12. Reducing reliability while simplifying the process and reducing production costs.
  • the elastic material 13 is only filled between adjacent light emitting diodes 12, that is, the light emitting diode 12 and the first substrate 11 are no longer
  • the elastic material 13 is filled.
  • the LED array structure provided by the embodiment can achieve the purpose of simplifying the process flow and reducing the production cost while ensuring the reliability of the bending.
  • the LED array structure further includes a buffer layer formed on the hole layer 124 or the electron layer 122 of the LED 12.
  • the buffer layer is formed on a side of the hole layer 124 or the electron layer 122 away from the light emitting layer 123.
  • the LED array structure further includes a buffer layer (not shown) formed on the hole layer 124.
  • the buffer layer is formed on a side of the hole layer 124 away from the light-emitting layer 123.
  • the light emitting diode array structure (not shown) further includes a buffer layer (not shown) formed on the electronic layer 122.
  • the buffer layer is formed on a side of the electron layer 122 away from the light emitting layer 123.
  • the material of the buffer layer in the above embodiments may be selected from materials such as aluminum nitride (AlN), gallium nitride (GaN), and the like. Since aluminum nitride (AlN) and gallium nitride (GaN) have many advantages such as small thermal expansion coefficient, strong corrosion resistance, high heat resistance and high stability, aluminum nitride (AlN) and gallium nitride are used.
  • the GaN) material as a buffer layer material can greatly improve the buffering capacity of the buffer layer.
  • the elastic material comprises at least one of polyurethane, silicone rubber, and polyimide.
  • the coating of the LED chip is realized by filling the elastic material 13 between the LEDs 12 and between the LEDs 12 and the first substrate 11, and the elastic material is used as the stress release process of the flexible screen bending process. The layer prevents damage to the brittle LED chip.
  • polyurethane, silicone rubber, and polyimide materials have high flexibility and resilience, they also have excellent oil resistance, solvent resistance, oxidative stability, and the like. Therefore, polyurethane is used. Silicone rubber and polyimide materials can greatly improve the elasticity and stability of the elastic material as an elastic material, thereby further improving the bending stability of the LED array structure.
  • the elastic material 13 coats the light emitting diode chip, the electron layer 122, the light emitting layer 123, and the hole layer 124 are all coated, and the electrode 121 is not covered.
  • the LED array structure further includes a second substrate for bonding with the first substrate 11 , and the second substrate includes a light conversion layer 14 . That is, the second substrate is bonded to the first substrate 11 to form a light conversion layer 14 of different colors (for example, R, G, B). Specifically, the second substrate is attached to one side of the first substrate 11 on which the light emitting diode 12 is disposed.
  • the LED array structure of the present invention provides a coating of the LED chip by filling an elastic material between the LEDs and between the LEDs and the first substrate, and using the elastic material as the flexible screen.
  • the stress relieving layer of the bending process can improve the bending resistance of the LED array structure while preventing damage of the brittle LED chip.
  • a second embodiment of the present invention provides a display device.
  • the display device includes the LED array structure of the first embodiment.
  • the specific structure of the LED array structure is not described herein.
  • the display device provided by the embodiment of the present invention achieves the coating of the LED chip by filling the elastic material between the LEDs and the LED and the substrate, and the elastic material is used as the stress release process of the flexible screen bending process.
  • the layer can improve the bending resistance of the LED array structure while preventing damage of the brittle LED chip.

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Abstract

一种发光二极管阵列结构及显示装置，其中，所述发光二极管阵列结构包括第一基板和形成在第一基板上的发光二极管，所述发光二极管与所述第一基板之间填充有弹性材料，和/或相邻所述发光二极管之间填充有弹性材料。该发光二极管阵列结构及显示装置通过在发光二极管与第一基板之间填充弹性材料的方式，实现了以弹性材料作为柔性屏体弯折过程的应力释放层的目的，可在防止脆性的发光二极管芯片损伤的同时提高发光二极管阵列结构的耐弯折性能。

Description

一种发光二极管阵列结构及显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种发光二极管阵列结构及显示装置。
发明背景
Micro-LED技术是指在微小尺寸内集成高密度LED(Light Emitting Diode，发光二极管)阵列的技术，在应用至显示领域时，其可以将像素点距离从毫米级降低至微米级。相比于其他微显示技术，由于该类显示设备自发光，光学系统简单，可以减少整体系统的体积、重量、成本，同时兼顾低功耗、快速反应等特性。
在实现过程中，会存在以下问题：难以保证脆性的LED器件制作柔性面板时的弯折可靠性。
发明内容
本发明的主要目的在于提出一种发光二极管阵列结构及显示装置，旨在解决现有技术存在的问题。
为实现上述目的，本发明实施例第一方面提供一种发光二极管阵列结构，所述发光二极管阵列结构包括第一基板、形成在所述第一基板上的多个发光二极管，所述发光二极管与所述第一基板之间填充有弹性材料，和/或相邻所述发光二极管之间填充有弹性材料。
可选的，所述弹性材料包括聚氨酯、硅橡胶、聚酰亚胺中的至少一种。
可选的，所述发光二极管包括电子层、发光层、空穴层以及电极；所述发光层形成于所述电子层和所述空穴层之间。
可选的，所述弹性材料包覆电子层、发光层和空穴层。
可选的，所述电子层为n型GaN层，所述空穴层为p型GaN层。
可选的，所述电子层为p型GaN层，所述空穴层为n型GaN层。
可选的，所述发光二极管阵列结构进一步包括形成在所述空穴层或所述电子层上的缓冲层。
可选的，所述缓冲层远离所述发光层设置。
可选的，所述缓冲层的材料包括氮化铝、氮化镓中的至少一种。
可选的，所述第一基板的材料包括聚对苯二甲酸乙二醇酯、聚甲基丙烯酸甲酯、聚酰亚胺、聚氨酯、硅橡胶中的至少一种。
可选的，所述发光二极管阵列结构进一步包括用于与所述第一基板进行贴合的第二基板，所述第二基板包括光转换层。
可选的，所述第二基板贴合于所述第一基板设置有所述发光二极管的一侧。
此外，为实现上述目的，本发明实施例第二方面提供一种显示装置，所述显示装置包括上述任一实施例所提及的发光二极管阵列结构。
本发明实施例提供的发光二极管阵列结构及显示装置，通过在发光二极管与第一基板之间填充弹性材料的方式，实现了以弹性材料作为柔性屏体弯折过程的应力释放层的目的，可在防止脆性的发光二极管芯片损伤的同时提高发光二极管阵列结构的耐弯折性能。
附图简要说明
图1为本发明实施例的发光二极管阵列结构示意图。
附图标记说明：
第一基板11、发光二极管12、弹性材料13、电极121、电子层122、发 光层123、空穴层124、光转换层14。
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
实施本发明的方式
在本发明实施例的描述中，需要理解的是，术语中“中心”、“上”、“下”、“前”、“后”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。
在本发明实施例的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“连接”、“相连”应做广义理解，例如，可以是固定连接，也可以是拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以是通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明的具体含义。此外，在本发明的描述中，除非另有说明，“多个”、“若干”的含义是两个或两个以上。
第一实施例
如图1所示，本发明第一实施例提供一种发光二极管阵列结构，所述发光二极管阵列结构包括第一基板11、形成在所述第一基板11上的多个发光二极管12，多个发光二极管12之间、以及发光二极管12与所述第一基板11之间填充有弹性材料13。
在本实施例中，所述第一基板11的材料可选自聚对苯二甲酸乙二醇酯、 聚甲基丙烯酸甲酯、聚酰亚胺、聚氨酯、硅橡胶等柔性有机材料，并且对第一基板11所包含的材料的种类数量不进行限制。
所述发光二极管12包括电子层122、发光层123、空穴层124以及电极121；所述发光层123形成于所述电子层122和所述空穴层124之间。
应当理解，当靠近所述第一基板11的为电子层122时，则位于远离所述第一基板11的为空穴层124；当靠近所述第一基板11的为空穴层124时，则位于远离所述第一基板11的为电子层122。也就是说，图1所示的所述发光二极管阵列结构中的所述电子层122和所述空穴层124的位置可以互换。
在本发明一种实施方式中，所述弹性材料13只填充于所述发光二极管12与所述第一基板11之间，也就是说，相邻的所述发光二极管12之间不再填充所述弹性材料13。应当理解，与将所述弹性材料13填充于所述发光二极管12与所述第一基板11之间和相邻发光二极管12之间相比，本实施例提供的发光二极管阵列结构能够在保证弯折可靠性的同时实现简化工艺流程、降低生产成本的目的。
同理，在本发明另一种实施方式中，所述弹性材料13只填充于相邻的发光二极管12之间，也就是说，所述发光二极管12与所述第一基板11之间不再填充所述弹性材料13。同样，本实施例提供的发光二极管阵列结构能够在保证弯折可靠性的同时实现简化工艺流程、降低生产成本的目的。
优选地，所述发光二极管阵列结构还包括形成在所述发光二极管12的所述空穴层124或电子层122上的缓冲层。具体地，所述缓冲层形成于所述空穴层124或电子层122上远离发光层123的一侧。
在一种实施方式中，如图1所示，所述发光二极管阵列结构还包括形成在所述空穴层124上的缓冲层(附图未示出)。具体地，所述缓冲层形成于所 述空穴层124上远离发光层123的一侧。
在一种实施方式中，(图中未显示)所述发光二极管阵列结构还包括形成在所述电子层122上的缓冲层(附图未示出)。具体地，所述缓冲层形成于所述电子层122上远离发光层123的一侧。
应当理解，上述实施例中所述缓冲层的材料可选自氮化铝(AlN)、氮化镓(GaN)等材料。由于氮化铝(AlN)、氮化镓(GaN)具有热膨胀系数小、抗侵蚀能力强、耐热性高及稳定性强等诸多优势，因此，采用氮化铝(AlN)、氮化镓(GaN)材料作为缓冲层材料能够极大提高缓冲层的缓冲能力。
在本发明一实施例中，所述弹性材料包括聚氨酯、硅橡胶、聚酰亚胺中的至少一种。应当理解，通过在发光二极管12之间及所述发光二极管12与第一基板11之间填充弹性材料13，实现对发光二极管芯片的包覆，以弹性材料作为柔性屏体弯折过程的应力释放层，可防止脆性的发光二极管芯片损伤。此外，由于聚氨酯、硅橡胶、聚酰亚胺材料在具有较高的柔曲性和回弹性的同时还具有优良的耐油性、耐溶剂性、氧化稳定性等诸多优良性能，因此，采用聚氨酯、硅橡胶、聚酰亚胺材料作为弹性材料能够极大提高弹性材料的弹性和稳定性，从而进一步提高了发光二极管阵列结构的弯折稳定性。
需要说明的是，弹性材料13对发光二极管芯片进行包覆时，电子层122、发光层123和空穴层124都被包覆，而电极121未被包覆。
在本实施例中，所述电子层122为n型GaN层，所述空穴层124为p型GaN层；或所述电子层122为p型GaN层，所述空穴层124为n型GaN层。请再参考图1所示，在本实施例中，所述发光二极管阵列结构还包括用于与所述第一基板11进行贴合的第二基板，所述第二基板包括光转换层14。也就是说，所述第二基板与所述第一基板11进行贴合后形成了不同颜色(例如R、 G、B)的光转换层14。具体地，所述第二基板贴合于所述第一基板11设置有所述发光二极管12的一侧。
本发明实施例提供的发光二极管阵列结构，通过在发光二极管之间、以及发光二极管与第一基板之间填充弹性材料的方式，实现对发光二极管芯片的包覆，并且以弹性材料作为柔性屏体弯折过程的应力释放层，可在防止脆性的发光二极管芯片损伤的同时提高发光二极管阵列结构的耐弯折性能。
第二实施例
本发明第二实施例提供一种显示装置，所述显示装置包括第一实施例所述的发光二极管阵列结构，其中，所述发光二极管阵列结构的具体结构在此不作赘述。
本发明实施例提供的显示装置，通过在发光二极管之间、以及发光二极管与基板之间填充弹性材料，实现对发光二极管芯片的包覆，并且以弹性材料作为柔性屏体弯折过程的应力释放层，可在防止脆性的发光二极管芯片损伤的同时提高发光二极管阵列结构的耐弯折性能。
依照本发明的实施例如上文所述，这些实施例并没有详尽叙述所有的细节，也不限制该发明仅为所述的具体实施例。显然，根据以上描述，可作很多的修改和变化。本说明书选取并具体描述这些实施例，是为了更好地解释本发明的原理和实际应用，从而使所属技术领域技术人员能很好地利用本发明以及在本发明基础上的修改使用。本发明仅受权利要求书及其全部范围和等效物的限制。

Claims (12)

  1. 一种发光二极管阵列结构，其中，所述发光二极管阵列结构包括第一基板、形成在所述第一基板上的多个发光二极管，所述发光二极管与所述第一基板之间填充有弹性材料，和/或相邻所述发光二极管之间填充有弹性材料。
  2. 根据权利要求1所述的发光二极管阵列结构，其中，所述弹性材料包括聚氨酯、硅橡胶、聚酰亚胺中的至少一种。
  3. 根据权利要求1所述的发光二极管阵列结构，其中，所述发光二极管包括电子层、发光层、空穴层以及电极；所述发光层形成于所述电子层和所述空穴层之间。
  4. 根据权利要求3所述的发光二极管阵列结构，所述弹性材料包覆电子层、发光层和空穴层。
  5. 根据权利要求3所述的发光二极管阵列结构，其中，所述电子层为n型GaN层，所述空穴层为p型GaN层；或
    所述电子层为p型GaN层，所述空穴层为n型GaN层。
  6. 根据权利要求3所述的发光二极管阵列结构，其中，所述发光二极管阵列结构还包括形成在所述空穴层或所述电子层上的缓冲层。
  7. 根据权利要求6所述的发光二极管阵列结构，其中，所述缓冲层远离所述发光层设置。
  8. 根据权利要求6或7所述的发光二极管阵列结构，其中，所述缓冲层的材料包括氮化铝、氮化镓中的至少一种。
  9. 根据权利要求1所述的发光二极管阵列结构，其中，所述第一基板的材料包括聚对苯二甲酸乙二醇酯、聚甲基丙烯酸甲酯、聚酰亚胺、聚氨酯、硅橡胶中的至少一种。
  10. 根据权利要求1所述的发光二极管阵列结构，其中，所述发光二极管阵列结构还包括用于与所述第一基板进行贴合的第二基板，所述第二基板包括光转换层。
  11. 根据权利要求10所述的发光二极管阵列结构，其中，所述第二基板贴合于所述第一基板设置有所述发光二极管的一侧。
  12. 一种显示装置，其特征在于，所述显示装置包括如权利要求1至11任一所述的发光二极管阵列结构。
PCT/CN2018/087334 2017-09-28 2018-05-17 一种发光二极管阵列结构及显示装置 Ceased WO2019062155A1 (zh)

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