WO2020220599A1 - 批量转移头及其加工方法 - Google Patents

批量转移头及其加工方法 Download PDF

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Publication number
WO2020220599A1
WO2020220599A1 PCT/CN2019/111746 CN2019111746W WO2020220599A1 WO 2020220599 A1 WO2020220599 A1 WO 2020220599A1 CN 2019111746 W CN2019111746 W CN 2019111746W WO 2020220599 A1 WO2020220599 A1 WO 2020220599A1
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Prior art keywords
substrate
rigid
transfer head
batch transfer
group
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PCT/CN2019/111746
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English (en)
French (fr)
Inventor
邢汝博
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云谷（固安）科技有限公司
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Priority to KR1020217036599A priority Critical patent/KR20210143324A/ko
Publication of WO2020220599A1 publication Critical patent/WO2020220599A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Definitions

  • This application relates to the field of display technology, in particular to a batch transfer head and a processing method thereof.
  • Micro-LED Compared with the current display technology, Micro-LED has the technical characteristics of long life, high reliability, high brightness and low power consumption. It is expected to have a wide range of applications in the fields of vehicles, wearables, indoor and outdoor large screens, and is a new development in current display technology. Hot and cutting-edge.
  • the LED chips of the Micro-LED display panel are processed, they are usually formed in batches on the same carrier, and then the LED chips on the carrier are transferred in batches. In the process of LED chip transfer, the number of single transfer of LED chips has a very important influence on the transfer efficiency of LED chips and the processing efficiency and cost of the display panel.
  • this application provides a batch transfer head and a processing method thereof.
  • a batch transfer head the batch transfer head includes an elastic substrate and a rigid suction head group, the rigid suction head group includes a plurality of rigid suction heads, the rigid suction The head group is arranged on the elastic substrate so as to adjust the position of each rigid suction head included in the rigid suction head group through the deformation of the elastic substrate.
  • a method for processing a batch transfer head including:
  • the rigid suction head group including a plurality of rigid suction heads
  • the supporting substrate is removed to obtain the batch transfer head.
  • the position of each rigid tip on the rigid tip group can be adjusted through the deformation of the elastic substrate, so that it can be attached to the corresponding chip to be transferred, thereby reducing the virtual reality caused by the process fluctuation of the chip to be transferred.
  • the number of chips to be transferred that can be absorbed by the rigid tip group can be increased, and the transfer efficiency can be improved.
  • Fig. 1 is a schematic structural diagram of a batch transfer head shown in an exemplary embodiment of the present application.
  • Fig. 2 is a schematic structural diagram of another batch transfer head with a strengthening layer added according to the exemplary embodiment of Fig. 1.
  • FIG. 3 is a schematic structural diagram of yet another batch transfer head with a buffer layer added according to the exemplary embodiment of FIG. 1.
  • Fig. 4 is a flowchart of a method for processing batch transfer heads according to an exemplary embodiment of the present application.
  • Fig. 5 is one of the processing state diagrams of a batch transfer head shown in an exemplary embodiment of the present application.
  • Fig. 6 is a second diagram showing a processing state of a batch transfer head according to an exemplary embodiment of the present application.
  • Fig. 7 is the third diagram of the processing state of a batch transfer head shown in an exemplary embodiment of the present application.
  • Fig. 8 is a fourth diagram of a processing state of a batch transfer head shown in an exemplary embodiment of the present application.
  • Fig. 9 is the fifth diagram of the processing state of a batch transfer head shown in an exemplary embodiment of the present application.
  • the LED chips are usually formed in batches on the same carrier, and the LED chips on the carrier are subsequently transferred in batches.
  • the batch of LED chips are all formed on the same carrier board, the height of the LED chips formed on the carrier board is not uniform due to the influence of the process when the carrier is formed and the process influence when forming each LED chip. Therefore, when the LED chips are transferred in batches, there may be virtual bonding or non-bonding between each probe and the corresponding LED chip, so that the LED chips cannot be transferred quickly and effectively. Therefore, how to offset the height difference of the LED chips, improve the bonding strength between the transfer head and each LED chip, and improve the transfer efficiency and quality has become an urgent technical problem to be solved.
  • the present application provides a batch transfer head, through which the chips to be transferred on the carrier board can be transferred in batches, and the probability of unsuccessful transfer due to the height difference of the chips to be transferred can be reduced.
  • the batch transfer head 100 may include an elastic substrate 110 and a rigid suction head group 120.
  • the rigid suction head group 120 may include a plurality of rigid suction heads 121.
  • the rigid suction head group 120 may include two rigid suction heads 121 as exemplarily shown in FIG. 1.
  • Each rigid suction head 121 included in the rigid suction head group 120 is arranged on the elastic substrate 110, so that when the batch transfer head 100 is applied to the carrier board to attach the chip to be transferred on the carrier board, If there is a difference in the height of the chip to be transferred, the elastic substrate 110 of the batch transfer head 100 will deform to different degrees, so that each rigid tip of the rigid tip group 120 can be adjusted by the deformation of the elastic substrate 110 121 position, so that it can be attached to the corresponding chip to be transferred, reducing virtual bonding or non-bonding caused by process fluctuations during the processing of the chip to be transferred, and increasing the capacity of the rigid tip set 120 The number of chips to be transferred improves the transfer efficiency.
  • the elastic substrate 110 may be made of organic materials, for example, it may be made of one or more of polydimethylsiloxane, silicone rubber and polyurethane; or the elastic substrate 110 may also be made of other materials. It is made of deformed materials, so I won't repeat them here.
  • the thickness of the elastic substrate 110 can be set according to the height difference between the multiple elements to be transferred in batches arranged on the same plane.
  • the thickness of the elastic substrate 110 may be greater than the height difference between multiple elements to be transferred in batches arranged on the same plane, or the elastic deformation amount of the elastic substrate 110 in the thickness direction may be greater than that of the elastic substrate 110 arranged on the same plane.
  • the multiple elements may be multiple LED chips formed on the same carrier board.
  • the batch transfer head 100 may further include a substrate 130, the elastic substrate 110 may be disposed on the substrate 130, and the elastic substrate 110 is located between the substrate 130 and the rigid suction head group 120, so that the substrate 130 becomes the elastic substrate 110. Support is provided to prevent the elastic substrate 110 from expanding outward to the side away from the rigid suction head group 120 when deformed, resulting in failure to adapt to chips to be transferred of different heights.
  • the substrate 130 may be a rigid substrate, for example, it may include a glass substrate; or a substrate made of inorganic materials; or a substrate made of metal materials.
  • Each rigid tip 121 included in the rigid tip group 120 may include a first electrode 1211 and a second electrode 1212 spaced apart from each other, and the first electrode 1211 and the second electrode 1212 can interact with each other to generate electric charges. Adsorb the chip to be transferred.
  • the batch transfer head 100 may further include an insulating layer 140 that covers the first electrode 1211 and the second electrode 1212, and the first electrode 1211 and the second electrode 1212 are located between the insulating layer 140 and the elastic substrate 110.
  • first electrode 1211 and the second electrode 1212 There is a gap between the first electrode 1211 and the second electrode 1212, so that when one of the first electrode 1211 and the second electrode 1212 is applied with a positive voltage and the other is applied with a negative voltage, the first electrode 1211 and the second electrode 1212 Charges can be induced between 1212 and on the insulating layer 140 to adsorb the corresponding chip to be transferred.
  • the following method can be used: a whole metal layer is deposited in advance, and then the metal layer is patterned to obtain the first electrode 1211 included in each rigid tip 121 And the second electrode 1212.
  • the insulating layer 140 may be arranged on a whole surface, that is, multiple or all rigid tips 121 on the rigid tip group 120 share the same insulating layer 140, which can reduce the forming process steps for the insulating layer 140 , Is conducive to improving production efficiency.
  • the batch transfer head 100 may include a plurality of insulating layers, and the plurality of insulating layers corresponds to the plurality of rigid suction heads 121 included in the rigid suction head group 120 one-to-one, for example, they may be spaced in parallel.
  • a plurality of insulating layers are provided, and the position of each insulating layer can correspond to the position of the corresponding rigid suction head, thereby saving materials and reducing production costs.
  • the insulating layer can be made of inorganic insulating materials, for example, preferably can be made of one or more of silicon nitride and silicon oxide.
  • silicon nitride and silicon oxide The properties of silicon nitride and silicon oxide are stable and cheap and easy to obtain. In the embodiment, other materials can also be used.
  • the batch transfer head 100 may further include a strengthening layer 150 corresponding to each rigid tip 121 included in the rigid tip group 120, and the strengthening layer 150 is located on the elastic substrate 110 and the corresponding The rigid suction head 121 between.
  • the strengthening layer 150 can be made of one or more of photoresist, silicon oxide, and liquid glass (spin-on glass, SOG), preferably photoresist. There are many types of photoresist, and a range of options are available. Wide and excellent performance.
  • the batch transfer head 100 may further include a buffer layer 170 disposed on the side of the insulating layer 140 away from the elastic substrate 110. Since the batch transfer head 100 adjusts the position of each rigid suction head 121 included in the rigid suction head group 120 through the deformation of the elastic substrate 110, so that it can be attached to the corresponding chip to be transferred, when the elastic substrate 110 When compressed, the chip will receive pressure from the suction head, and the buffer layer 170 is provided to protect the chip from the pressure. It can be seen that the material of the buffer layer is an elastic material.
  • the buffer layer 170 may be arranged on a whole surface, that is, a plurality or all of the rigid nozzles 121 on the rigid nozzle group 120 share the same buffer layer 170.
  • the batch transfer head 100 may further include a plurality of buffer layers, and the plurality of buffer layers may have a one-to-one correspondence with the plurality of rigid suction heads 121 included in the rigid suction head group 120.
  • the processing method may include steps 301 to 305:
  • step 301 a supporting substrate 160 is obtained.
  • the support substrate 160 may include a carrier (for example, a glass carrier) 161, a substrate layer 162 on the carrier 161, and a photoresist pattern layer 163 formed on the substrate layer 162.
  • the photoresist pattern layer 163 may have a plurality of recessed areas 1631 formed by a patterning process to plan the arrangement of the plurality of rigid suction heads 121 of the rigid suction head group 120 in advance. A rigid suction head 121 can be arranged in the recessed area 1631 later.
  • the substrate layer 162 may be made of polyimide.
  • the photoresist pattern layer 163 may be formed by patterning the photoresist coated on the substrate layer 162, and the photoresist pattern layer 163 may be removed by dry or wet cleaning, for example.
  • step 302 a rigid tip group 120 is formed on the supporting substrate 160.
  • an insulating layer 140 can also be formed on the photoresist pattern layer 163.
  • the insulating layer 140 can be formed on the photoresist pattern layer 163 through a deposition process based on inorganic materials. on. Then, after the insulating layer 140 is processed, a metal layer can be deposited on the side of the insulating layer 140 away from the support substrate 160, and the rigid tip group 120 is obtained after patterning the metal layer.
  • the rigid tip group 120 includes more A rigid tip 121.
  • step 303 an elastic substrate 110 is formed on the side of the rigid tip group 120 away from the supporting substrate 160.
  • a strengthening layer 150 corresponding to each rigid tip 121 may be formed based on the rigid tip group 120.
  • the strengthening layer 150 may be made of one or more materials of photoresist, silicon oxide, and liquid glass (spin-on glass, SOG). Further, referring to FIG. 7, after the process for the strengthening layer 150 is completed, one or more materials of polydimethylsiloxane, silicone rubber and polyurethane may be coated based on the strengthening layer 150 to form an elastic lining. Bottom 110.
  • step 304 a substrate 130 is formed on a side of the elastic substrate 110 away from the supporting substrate 160.
  • the substrate 130 may be formed on the side of the elastic substrate 110 away from the supporting substrate 160.
  • step 305 referring to FIG. 9, the supporting substrate 160 is removed, so that the batch transfer head 100 is obtained.
  • the carrier 161 can be stripped by a laser, and then the substrate layer 162 can be removed mechanically or by a dry method or a wet method, and the photoresist pattern 163 is removed by a dry method or a wet method, thereby obtaining the batch transfer head 100 as shown in FIG.
  • the processing sequence of the insulating layer 140, the rigid tip group 120, the strengthening layer 150, the elastic substrate 110, and the substrate 130 can avoid the processing temperature of the insulating layer 140, the rigid tip set 120 and the strengthening layer 150.
  • the environment affects the elastic substrate 110.

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Abstract

本申请提供一种批量转移头及其加工方法。所述批量转移头包括弹性衬底和刚性吸头组，所述刚性吸头组包括多个刚性吸头，所述刚性吸头组设置于所述弹性衬底上，以通过所述弹性衬底的形变调节所述刚性吸头组所包括的每一刚性吸头的位置，使之能够与对应的待转移芯片进行贴合，减少由于待转移芯片加工时的工艺波动而导致的虚贴合或者未贴合情况，可以增加刚性吸头组所能吸附的待转移芯片数量，提高转移效率。

Description

批量转移头及其加工方法
相关申请
本申请要求2019年04月29日申请的，申请号为201910354430.6，名称为“批量转移头及其加工方法”的中国专利申请的优先权，在此将其全文引入作为参考。
技术领域
本申请涉及显示技术领域，尤其涉及一种批量转移头及其加工方法。
背景技术
Micro-LED相对目前的显示技术具有寿命长、可靠性高、亮度高、功耗低等技术特点，预期在车载、穿戴、户内外超大屏等领域有广泛的应用，是当前显示技术发展的新热点和最前沿。当前，在针对Micro-LED显示面板的LED芯片进行加工时，通常都是成批量的形成在同一载板上，后续再将该载板上的LED芯片成批量的进行转移。在LED芯片转移过程中，LED芯片单次转移的数量对LED芯片的转移效率和显示面板的加工效率及成本有着非常重要的影响。
发明内容
为提高批量转移的数量，本申请提供一种批量转移头及其加工方法。
根据本申请的实施例的第一方面，提供一种批量转移头，所述批量转移头包括弹性衬底和刚性吸头组，所述刚性吸头组包括多个刚性吸头，所述刚性吸头组设置于所述弹性衬底上，以通过所述弹性衬底的形变调节所述刚性吸头组内所包括的每一刚性吸头的位置。
根据本申请实施例的第二方面，提供一种批量转移头的加工方法，包括：
获取支撑衬底；
在所述支撑衬底上形成刚性吸头组，所述刚性吸头组包括多个刚性吸头；
在所述刚性吸头组远离所述支撑衬底一侧形成弹性衬底；
在所述弹性衬底上远离所述支撑衬底的一侧形成基板；和
去除所述支撑衬底，获得所述批量转移头。
本申请通过弹性衬底的形变可以调节刚性吸头组上每一刚性吸头的位置，使之能够与对应的待转移芯片进行贴合，减少由于待转移芯片加工时的工艺波动而导致的虚贴合或者 未贴合情况，可以增加刚性吸头组所能吸附的待转移芯片数量，提高转移效率。
附图说明
图1是本申请一示例性实施例示出的一种批量转移头的结构示意图。
图2是根据图1的示例性实施例增加强化层的另一种批量转移头的结构示意图。
图3是根据图1的示例性实施例增加缓冲层的又一种批量转移头的结构示意图。
图4是本申请一示例性实施例示出的一种批量转移头加工方法的流程图。
图5是本申请一示例性实施例示出的一种批量转移头的加工状态图之一。
图6是本申请一示例性实施例示出的一种批量转移头的加工状态图之二。
图7是本申请一示例性实施例示出的一种批量转移头的加工状态图之三。
图8是本申请一示例性实施例示出的一种批量转移头的加工状态图之四。
图9是本申请一示例性实施例示出的一种批量转移头的加工状态图之五。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下通过实施例，并结合附图，对本申请的光伏组件清洁系统进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
在相关技术中，在针对Micro-LED显示面板的LED芯片加工中，通常都是成批量的将LED芯片形成在同一载板上，后续再将该载板上的LED芯片成批量的进行转移。尽管该批量的LED芯片均是形成在同一载板上，但基于形成载板时的工艺影响、以及形成每一LED芯片时的工艺影响，会导致形成在载板上的LED芯片高度不统一，从而在针对LED芯片进行批量转移时，每一探针与对应LED芯片之间可能存在虚贴合或者未贴合的情况，从而无法快速、有效的转移LED芯片。因此，如何抵消LED芯片的高度差异，提高转移头与每一LED芯片之间的贴合强度、提升转移效率和质量已经成为亟待解决的技术问题。
基于此，本申请提供一种批量转移头，通过该批量转移头可以批量地转移位于载板上的待转移芯片，并且能够降低由于待转移芯片的高度差异而导致转移不成功的概率。
请参阅图1，本申请一实施例提供的批量转移头100可以包括弹性衬底110和刚性吸头组120。该刚性吸头组120可以包括多个刚性吸头121，例如，该刚性吸头组120可以包括如图1示例性显示的两个刚性吸头121。该刚性吸头组120所包括的每一刚性吸头121均设置在弹性衬底110上，从而当将该批量转移头100作用在载板上以贴合位于载板上的 待转移芯片时，若待转移芯片的高度存在差异，则会使得批量转移头100的弹性衬底110发生不同程度上的形变，从而通过该弹性衬底110的形变可以调节刚性吸头组120的每一刚性吸头121的位置，使之能够与对应的待转移芯片进行贴合，减少由于待转移芯片加工时的工艺波动而导致的虚贴合或者未贴合情况，可以增加刚性吸头组120所能吸附的待转移芯片数量，提高转移效率。该弹性衬底110可以采用有机材料制成，例如其可以采用聚二甲基硅氧烷、硅橡胶和聚氨酯中一种或者多种材料制成；再或者该弹性衬底110也可以采用其他可形变的材料制成，在此不再一一赘述。
弹性衬底110的厚度可以根据设置在同一平面的待批量转移的多个元件之间的高度差进行设置。例如，所述弹性衬底110的厚度可以大于设置在同一平面的待批量转移的多个元件之间的高度差，或者所述弹性衬底110在厚度方向上的可弹性形变量大于设置在同一平面的待批量转移的多个元件之间的高度差。所述多个元件可为形成在同一载板上的多个LED芯片。
该批量转移头100还可以包括基板130，弹性衬底110可以设置于该基板130上，并且弹性衬底110位于基板130和刚性吸头组120之间，以通过该基板130为弹性衬底110提供支撑，避免弹性衬底110在形变时向远离刚性吸头组120的一侧向外扩张、导致无法适配至不同高度的待转移芯片。该基板130可以为刚性基板，比如可以包括玻璃基板；或者无机材料制成的基板；再或者采用金属材料制成的基板等。
刚性吸头组120所包括的每一刚性吸头121均可以包括相间隔的第一电极1211和第二电极1212，该第一电极1211和第二电极1212之间可以相互作用从而产生电荷，以吸附待转移芯片。
批量转移头100还可以包括绝缘层140，该绝缘层140可以覆盖第一电极1211和第二电极1212，且该第一电极1211和第二电极1212位于绝缘层140和弹性衬底110之间。
第一电极1211和第二电极1212之间存在一缝隙，从而在第一电极1211和第二电极1212中的一方被施加正电压且另一方被施加负电压时，第一电极1211和第二电极1212之间以及绝缘层140上可以感应产生电荷，以吸附对应的待转移芯片。针对第一电极1211和第二电极1212的形成可以采用下述方式：预先沉积整片的金属层，然后通过对金属层进行图案化处理，得到每一刚性吸头121所包括的第一电极1211和第二电极1212。
在一实施例中，绝缘层140可以为整面式设置，即刚性吸头组120上的多个或者全部刚性吸头121共用同一绝缘层140，以此可以减少针对绝缘层140的成型工艺步骤，有利于提高生产效率。或者，在另一实施例中，批量转移头100可以包括多个绝缘层，且该多 个绝缘层与刚性吸头组120所包括的多个刚性吸头121一一对应，例如可平行间隔地设置多个绝缘层，每一绝缘层的位置可与相应刚性吸头的位置对应，以此可以节约材料，降低生产成本。该绝缘层可以采用无机绝缘材料制成，例如优选地可以采用氮化硅和氧化硅中一种或者多种材料制成，氮化硅和氧化硅材料性能稳定，且廉价易得，当然在其他实施例中，也可以采用其他材料制成。
请参阅图2，批量转移头100还可以包括强化层150，该强化层150对应于刚性吸头组120所包括的每一刚性吸头121设置，且该强化层150位于弹性衬底110和对应的刚性吸头121之间。相对于弹性衬底110与刚性吸头121直接接触的技术方案，可以通过强化层150缓冲部分直接作用在刚性吸头121上的作用力，降低刚性吸头121所包括的金属电极折弯或者断裂的概率。其中，该强化层150可以采用光刻胶、氧化硅、液体玻璃(spin-on glass，SOG)中一种或者多种制成，优选为光刻胶，光刻胶的种类很多，可选择范围广，性能优异。
请参阅图3，批量转移头100还可以包括缓冲层170，设置于绝缘层140远离弹性衬底110的一侧。由于批量转移头100通过所述弹性衬底110的形变调节刚性吸头组120所包括的每一刚性吸头121的位置，使之能够与对应的待转移芯片进行贴合，当弹性衬底110被压缩时，芯片会受到来自吸头的压力，缓冲层170的设置用于保护芯片免受压力所带来的影响。可知的，缓冲层的材料为弹性材料。缓冲层170可以为整面式设置，即刚性吸头组120上的多个或者全部刚性吸头121共用同一缓冲层170。在其他实施例中，批量转移头100还可以包括多个缓冲层，该多个缓冲层与刚性吸头组120所包括的多个刚性吸头121可以一一对应。
本申请还提供一种批量转移头的加工方法，请参阅图4，该加工方法可以包括步骤301至305：
在步骤301中，获取支撑衬底160。
请参阅图5，该支撑衬底160可以包括载体(例如玻璃载体)161、位于载体161上的衬底层162以及形成于衬底层162上的光刻胶图形层163。该光刻胶图形层163可以具有通过图案化工艺形成的多个凹陷区域1631，以预先规划刚性吸头组120的多个刚性吸头121的排布方式。后续可以在该凹陷区域1631内设置刚性吸头121。该衬底层162可以采用聚酰亚胺制成。该光刻胶图形层163可以是对涂布于衬底层162上的光刻胶进行图案化形成，后续例如可以以干法或湿法清洗的方式去除光刻胶图形层163。
在步骤302中，在支撑衬底160上形成刚性吸头组120。
在形成刚性吸头组120之前，请参阅图6，还可以在光刻胶图形层163上先形成绝缘层140，该绝缘层140可以基于无机材料通过沉积工艺后形成于光刻胶图形层163上。然后，在绝缘层140加工完成后，可以在绝缘层140远离支撑衬底160的一侧沉积金属层，在针对金属层进行图案化处理后得到刚性吸头组120，刚性吸头组120包括多个刚性吸头121。
在步骤303中，在刚性吸头组120远离支撑衬底160一侧形成弹性衬底110。
请参阅图7，在形成弹性衬底110之前，可以基于刚性吸头组120形成对应于每一刚性吸头121的强化层150。该强化层150可以采用光刻胶、氧化硅和液体玻璃(spin-on glass，SOG)中的一种或者多种材料制成。进一步地，请参阅图7，在针对强化层150的工艺完成之后，可以基于强化层150涂覆聚二甲基硅氧烷、硅橡胶和聚氨酯中的一种或者多种材料，从而形成弹性衬底110。
在步骤304中，在所述弹性衬底110上远离所述支撑衬底160的一侧形成基板130。
请参阅图8，在弹性衬底110形成之后，可以在弹性衬底110远离支撑衬底160的一侧形成基板130。
在步骤305中，请参阅图9，去除支撑衬底160，从而获取批量转移头100。
可以采用激光剥离载体161，然后机械剥离或采用干法或湿法清除衬底层162，干法或湿法方式清除光刻胶图形163，从而得到如图9所示的批量转移头100。
本申请通过绝缘层140、刚性吸头组120、强化层150、弹性衬底110再基板130的加工顺序，可以避免在加工绝缘层140、刚性吸头组120和强化层150时，由于工艺温度、环境对弹性衬底110产生影响。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (18)

  1. 一种批量转移头，包括：
    弹性衬底；和
    刚性吸头组，所述刚性吸头组包括若干刚性吸头，所述刚性吸头组设置于所述弹性衬底上，以通过所述弹性衬底的形变调节所述刚性吸头组内的每一刚性吸头的位置。
  2. 根据权利要求1所述的批量转移头，还包括：
    基板，所述弹性衬底设置于所述基板上，且所述弹性衬底位于所述基板和所述刚性吸头组之间。
  3. 根据权利要求1所述的批量转移头，其中，所述基板是刚性基板。
  4. 根据权利要求1所述的批量转移头，其中，所述刚性吸头包括：
    相分离的第一电极和第二电极，每一所述刚性吸头的所述第一电极和所述第二电极之间能够相互作用从而产生电荷，以吸附待转移的元件。
  5. 根据权利要求4所述的批量转移头，还包括：绝缘层，所述绝缘层覆盖所述第一电极和所述第二电极，所述第一电极和所述第二电极位于所述绝缘层和所述弹性衬底之间；
    其中，所述第一电极和所述第二电极中的一方通正电压且另一方通负电压，所述绝缘表面产生感应电荷，以吸附所述待转移的元件。
  6. 根据权利要求5所述的批量转移头，其中，所述刚性吸头组内的所有刚性吸头共用同一绝缘层。
  7. 根据权利要求5所述的批量转移头，所述绝缘层的材料包括氮化硅和氧化硅中的至少一种。
  8. 根据权利要求5所述的批量转移头，还包括：
    缓冲层，所述缓冲层设置于所述绝缘层远离所述弹性衬底的一侧。
  9. 根据权利要求1所述的批量转移头，还包括：
    强化层，所述强化层对应于所述刚性吸头组的每一所述刚性吸头设置，且所述强化层位于所述弹性衬底和对应的所述刚性吸头之间。
  10. 根据权利要求9所述的批量转移头，其中，所述强化层的材料包括光刻胶、氧化硅和液体玻璃中的至少一种。
  11. 根据权利要求1至10中任一项所述的批量转移头，其中，所述弹性衬底的材料包括聚二甲基硅氧烷、硅橡胶和聚氨酯中的至少一种。
  12. 根据权利要求1所述的批量转移头，其中，所述弹性衬底的厚度大于设置在同一平面的待批量转移的多个元件之间的高度差。
  13. 根据权利要求1所述的批量转移头，其中，所述弹性衬底在厚度方向上的可弹性形变量大于设置在同一平面的待批量转移的多个元件之间的高度差。
  14. 根据权利要求12或13所述的批量转移头，其中，所述待批量转移的多个元件为多个LED芯片。
  15. 一种批量转移头的加工方法，包括：
    获取支撑衬底；
    在所述支撑衬底上形成刚性吸头组，所述刚性吸头组包括多个刚性吸头；
    在所述刚性吸头组远离所述支撑衬底的一侧形成弹性衬底；
    在所述弹性衬底上远离所述支撑衬底的一侧形成基板；和
    去除所述支撑衬底，获得所述批量转移头。
  16. 根据权利要求15所述的加工方法，其中，在所述支撑基板上形成刚性吸头组的步骤包括：
    在所述支撑衬底上形成绝缘层；和
    在所述绝缘层上远离所述支撑衬底的一侧形成所述刚性吸头组。
  17. 根据权利要求16所述的加工方法，其中，在所述绝缘层上远离所述支撑衬底的一侧形成所述刚性吸头组的步骤包括：
    在所述绝缘层上远离所述支撑衬底的一侧沉积金属层，对所述金属层进行图案化处理后得到所述刚性吸头组。
  18. 根据权利要求15所述的加工方法，其中，在所述刚性吸头组远离所述支撑衬底一侧形成弹性衬底之前，还包括：
    在所述刚性吸头组远离所述支撑衬底的一侧形成对应于每一刚性吸头的强化层。
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