WO2019043945A1 - Dispositif à faisceau de particules chargées - Google Patents

Dispositif à faisceau de particules chargées Download PDF

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Publication number
WO2019043945A1
WO2019043945A1 PCT/JP2017/031788 JP2017031788W WO2019043945A1 WO 2019043945 A1 WO2019043945 A1 WO 2019043945A1 JP 2017031788 W JP2017031788 W JP 2017031788W WO 2019043945 A1 WO2019043945 A1 WO 2019043945A1
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WIPO (PCT)
Prior art keywords
coil
current
control unit
charged particle
sample
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PCT/JP2017/031788
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English (en)
Japanese (ja)
Inventor
遼 平野
恒典 野間口
知里 神谷
純一 片根
Original Assignee
株式会社日立ハイテクノロジーズ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 株式会社日立ハイテクノロジーズ filed Critical 株式会社日立ハイテクノロジーズ
Priority to DE112017007787.7T priority Critical patent/DE112017007787B4/de
Priority to CN201780094059.3A priority patent/CN111033676B/zh
Priority to JP2019538910A priority patent/JP6812561B2/ja
Priority to US16/641,035 priority patent/US11430630B2/en
Priority to PCT/JP2017/031788 priority patent/WO2019043945A1/fr
Publication of WO2019043945A1 publication Critical patent/WO2019043945A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H01J37/1413—Means for interchanging parts of the lens, e.g. pole pieces, within the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0266—Shields electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/141—Coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Definitions

  • the present invention relates to a charged particle beam device.
  • the FIB-SEM apparatus is a combined charged particle beam apparatus in which a focused ion beam (FIB) irradiation unit and a scanning electron microscope (SEM) are disposed in the same sample chamber.
  • the FIB-SEM apparatus is used to produce a thin film sample to be observed using a transmission electron microscope or to analyze the three-dimensional structure of the sample. Since the beam diameter of the probe is smaller in SEM than in FIB, the sample can be observed with high resolution.
  • the FIB-SEM apparatus alternately or simultaneously performs FIB processing and SEM observation. At this time, if the magnetic field leaks from the objective lens of the SEM into the sample chamber of the FIB-SEM, the ion beam of the FIB is deflected or the isotope of the ion source is separated, thereby deteriorating processing accuracy and resolution.
  • Patent Document 1 describes a composite charged particle beam device. "The prevention of mass separation of the focused ion beam by the residual magnetic field, and the improvement of the reproducibility and stability of the focus of the electron beam," the same document. To solve the problem, “The same sample chamber is equipped with a focused ion beam column, an electron beam column, and a magnetic field measuring instrument, and the residual magnetism in the sample chamber is measured, and the magnetic field on the trajectory of the focused ion beam A composite charged particle beam device comprising a function of controlling The magnetic field in the sample chamber is measured and controlled by an electromagnetic method so that the value becomes a previously stored value. Technology is disclosed (see abstract).
  • the FIB-SEM apparatus mounts in the sample chamber an analyzer for performing various analyzes such as EDS (Energy Dispersive X-ray Spectrometry) and EBSD (Electron Back Scatter Diffraction). . Therefore, it may be difficult to secure a space for mounting a magnetic field detector as in Patent Document 1 in the sample chamber.
  • EDS Electronic Dispersive X-ray Spectrometry
  • EBSD Electro Back Scatter Diffraction
  • the present invention has been made in view of the above problems, and realizes a composite charged particle beam device capable of suppressing a stray magnetic field from a pole piece forming an objective lens of SEM with a simple structure. It is a thing.
  • the charged particle beam device performs an operation of acquiring an ion beam observation image while supplying a current to the first coil constituting the objective lens with a plurality of current values, and based on the difference between the operations, The displacement of the observation image is reduced by supplying current to the two coils.
  • the shift of the focused ion beam can be suppressed without measuring the magnetic field in the sample chamber. Therefore, the apparatus configuration can be simplified since it is not necessary to arrange the magnetic field measuring instrument in the sample chamber.
  • FIG. 1 is a block diagram of a charged particle beam device 10 according to a first embodiment.
  • FIG. 2 is a side view showing the configuration of an objective lens provided in the SEM lens barrel 100. It is a conceptual diagram of the magnetic field which generate
  • FIG. 10 is a flowchart illustrating a procedure of suppressing a leakage magnetic field by causing the charged particle beam device 10 according to the second embodiment to flow a current through the second coil 113.
  • 5 is a flowchart illustrating an operation when the charged particle beam device 10 changes an acceleration voltage of the SEM column 100.
  • FIG. 16 is a configuration diagram of an objective lens of an SEM lens barrel 100 provided in a charged particle beam device 10 according to a fourth embodiment. It is a modification of FIG.
  • FIG. 16 is a configuration diagram of an objective lens of an SEM lens barrel 100 provided in a charged particle beam device 10 according to a fifth embodiment. It is an example of FIB observation image when carrying out CutAndSee.
  • FIG. 1 is a block diagram of a charged particle beam device 10 according to a first embodiment of the present invention.
  • the charged particle beam device 10 is configured as a FIB-SEM device.
  • the charged particle beam device 10 includes an SEM lens barrel 100, an FIB lens barrel 101, a sample chamber 102, an FIB-SEM gantry 103, a controller 105, and a monitor 106.
  • the FIB column 101 irradiates the sample 104 with FIB in order to process or observe the sample 104.
  • the SEM column 100 irradiates the sample 104 with an electron beam in order to observe and analyze the sample 104 with high resolution.
  • the sample chamber 102 is a space in which the sample 104 is placed, and includes the above-described respective lens barrels.
  • the FIB-SEM gantry 103 mounts the sample chamber 102.
  • the controller 105 controls the charged particle beam device 10 to acquire an SEM observation image of the sample 104, processes the sample 104 by FIB, and acquires an FIB observation image of the sample 104.
  • the monitor 106 displays the processing result (for example, an observation image) on the sample 104 on the screen.
  • the FIB column 101 includes an ion source, a blanker, an electrostatic deflector, and an electrostatic objective lens.
  • the blanker is used to prevent the ion beam from being irradiated to the sample 104 while the FIB column 101 is operating.
  • the electrostatic deflector is for deflecting the ion beam to the origin of the lens center of the electrostatic objective lens to scan the surface of the sample 104.
  • a single-stage deflector or upper and lower two-stage deflectors can be used as the electrostatic deflector.
  • the SEM column 100 includes an electron gun, a condenser lens, a movable stop, a deflector, and an objective lens.
  • an electron gun a filament type, a Schottky type, a field emission type, or the like can be used.
  • the deflector one of magnetic field deflection type or electrostatic deflection type is used. A single stage deflector or two upper and lower stages deflectors can be used.
  • the objective lens a magnetic field lens using a focusing action of electrons by a magnetic field, an electric field superposition type magnetic field lens in which the chromatic aberration is reduced by superposing the magnetic field and the electric field, or the like can be used.
  • the sample 104 is mounted on a tiltable sample stage provided in a sample chamber 102.
  • the sample 104 is inclined toward the FIB column 101.
  • the sample 104 is observed by SEM, the sample 104 is inclined toward the SEM column 100.
  • a bias voltage is applied to the sample 104 at the time of SEM observation, the distortion of the electric field formed between the sample 104 and the SEM column 100 is taken into consideration, and the sample 104 is used as the central axis of the SEM column 100. Arrange it so that it is perpendicular to it.
  • the controller 105 scans the sample 104 with the primary electron beam generated from the electron gun by the deflector, and the secondary electrons generated from the inside of the sample 104 are detected by the secondary electron detector (in the SEM column 100 or the sample chamber 102 An SEM observation image is acquired by detecting by (it mounted inside).
  • the controller 105 processes the sample 104 by irradiating the sample 104 with an ion beam from the ion source, and acquires an FIB observation image of the sample 104.
  • the FIB observation image can be acquired by the same method as the SEM observation image.
  • FIG. 2 is a side view showing the configuration of the objective lens provided in the SEM lens barrel 100.
  • the objective lens includes a first pole piece 110, a second pole piece 111, and a first coil 112.
  • the first pole piece 110 and the second pole piece 111 can be formed of a hollow cylindrical magnetic material.
  • the electron beam passes through the hollow portion.
  • the first pole piece 110 and the second pole piece 111 are formed in axial symmetry with the path of the electron beam as the central axis.
  • the second pole piece 111 is disposed outside the first pole piece 110 as viewed from the path of the electron beam.
  • the end of the second pole piece 111 on the sample 104 side extends closer to the sample 104 than the end of the first pole piece 110 on the sample 104 side.
  • the first coil 112 is disposed between the first pole piece 110 and the second pole piece 111.
  • the controller 105 adjusts the magnetic flux generated from the first pole piece 110 and the second pole piece 111 by controlling the value of the current supplied to the first coil 112. Thereby, the characteristics of the magnetic field lens can be controlled.
  • the second coil 113 is disposed outside the second pole piece 111 as viewed from the path of the electron beam (the central axis of each pole piece).
  • the SEM column 100 may include the second coil 113, or the second coil 113 may be disposed in the sample chamber 102.
  • the controller 105 suppresses the leakage magnetic field according to the method described later by controlling the value of the current supplied to the second coil 113.
  • FIG. 3 is a conceptual view of a magnetic field generated in the objective lens shown in FIG.
  • FIG. 3 exemplifies the non-immersed magnetic lens 120 having a peak of magnetic field strength in the SEM lens barrel 100
  • a lens in which these magnetic field lenses are combined can also be used.
  • a non-immersion magnetic lens is a type of magnetic lens in which the lens is formed inside the SEM lens barrel 100.
  • the immersion type magnetic field lens is a type of magnetic field lens in which the lens is formed outside the SEM lens barrel 100 (on the side of the sample 104).
  • the objective lens of the non-immersed magnetic lens has a small stray magnetic field 121 to the sample chamber 102.
  • the magnetic field generated inside the sample chamber 102 due to the objective lens is not completely zero. Therefore, a Lorentz force acts on the ion beam by the stray magnetic field, and the ions are deflected in the direction orthogonal to the traveling direction of the ion beam and the magnetic flux direction of the magnetic field. As a result, the ion beam is shifted by several nm to several tens nm on the surface of the sample 104.
  • the objective lens of the single pole lens type generates a magnetic field in the vicinity of the sample 104 outside the SEM column 100, so the effect of the magnetic field on the ion beam is large, and a beam shift of about several hundred ⁇ m occurs on the sample 104. Deterioration of resolution occurs due to mass separation of the body. Furthermore, in the case of a single pole lens, the magnetic field remains in the sample chamber 102 even if the excitation is turned off, which deteriorates the performance of the ion beam.
  • FIG. 4 is an example of positional deviation of the FIB observation image.
  • FIG. 4A is an observation image when the sample 104 is observed by FIB while supplying a first current to the first coil 112.
  • the position of the observation image is shifted by the stray magnetic field generated from the second pole piece 111.
  • the reference position 131 when the first current is flowing is disposed at the center of the drawing.
  • FIG. 4B is an observation image when the sample 104 is observed by FIB while supplying a second current to the first coil 112.
  • the position of the sample 104 is the same as in FIG. 4 (a).
  • the displacement of the observation image also depends on the current value. It is different. That is, a difference 132 in the amount of misalignment occurs between when the first current flows through the first coil 112 and when the second current flows. In the first embodiment, the difference 132 is used to determine the current value to be supplied to the second coil 113.
  • FIG. 5 is a flow chart for explaining the procedure for determining the value of the current supplied to the second coil 113 in order to suppress the leakage magnetic field.
  • the flowchart may be implemented by the controller 105 or may be implemented manually by the operator. In the following description, the controller 105 implements each step. Each step of FIG. 5 will be described below.
  • Step S501 The controller 105 demagnetizes the magnetic field of the objective lens of the SEM column 100. This step is for enhancing the accuracy of FIB image shift correction performed in the following steps by eliminating the magnetic field remaining when the excitation of the SEM objective lens is zeroed.
  • the magnetic field generated from the SEM magnetic field lens can be canceled by passing a direct current or an alternating current, which is reverse to that at the time of observation, in the first coil 112 and the second coil 113.
  • the controller 105 acquires an observation image of the sample 104 by FIB while supplying the first current to the first coil 112 (S502).
  • the controller 105 specifies an amount by which a predetermined reference position is deviated on the observation image, and stores the image shift amount and the first current value on the storage device (S 503). For example, before starting this flowchart, the sample 104 can be observed in advance by FIB, and an appropriate position on the observation image can be determined as a reference position.
  • Steps S504 to S506 The controller 105 stores the FIB image shift amount and the second current value when the second current is supplied to the first coil 112 by the same procedure as steps S501 to S503. At this time, the position of the sample 104 is the same as in steps S501 to S503.
  • Step S507 The controller 105 estimates the correspondence between the current value supplied to the first coil 112 and the FIB image shift amount by the method illustrated in FIG.
  • the controller 105 determines a current value to be supplied to the second coil 113 in order to suppress the FIB image shift in accordance with the estimated correspondence relationship. The specific procedure will be described in conjunction with FIG.
  • FIG. 6 is a graph illustrating the correspondence between the current supplied to the first coil 112 and the FIB image shift amount. Assume that points 140 and 141 in FIG. 6 (a) are observed in steps S503 and S506, respectively. If the relationship between the current value supplied to the first coil 112 and the FIB image shift amount is linear, the controller 105 can estimate the correspondence between the two as a function 142.
  • the controller 105 obtains the FIB observation image while supplying current to the second coil 113 in accordance with the same procedure as steps S501 to S506, so that the value between the current value supplied to the second coil 113 and the FIB image shift amount. Can be estimated in the same manner as FIG. 6 (a).
  • the controller 105 can determine the current value to be supplied to the second coil 113 using the correspondence relationship estimated for the first coil 112 and the correspondence relationship estimated for the second coil 113. That is, it is sufficient to estimate the FIB image shift caused by applying a current to the first coil 112, and to flow the same amount of opposite FIB image shift to the second coil 113.
  • FIG. 6B shows an example in which the correspondence between the current supplied to the first coil 112 and the FIB image shift amount is not linear.
  • the same procedure as steps S501 to S503 is performed three or more times by changing the value of the current supplied to the first coil 112.
  • the current value to be applied to the second coil 113 is determined based on the difference between As a result, the FIB image shift can be suppressed using the second coil 113 without measuring the leakage magnetic field when a current is supplied to the first coil 112. Therefore, since it is not necessary to arrange a magnetic field measuring instrument in the sample chamber 102, the structure of the sample chamber 102 (and further the charged particle beam device 10 itself) can be simplified.
  • FIG. 7 is a flow chart for explaining the procedure of suppressing the leakage magnetic field by causing the charged particle beam device 10 according to the second embodiment of the present invention to flow a current through the second coil 113.
  • the configuration of the charged particle beam device 10 is the same as that of the first embodiment. Each step of FIG. 7 will be described below.
  • Steps S701 to S702 The controller 105 demagnetizes the magnetic field of the objective lens (S 701), and passes the first current to the first coil 112 (S 702), as in steps S 501 to S 502. Thereby, the FIB observation image of the sample 104 is shifted from the reference position.
  • Step S703 The controller 105 reverses the FIB image shift in step S702 by supplying a current to the second coil 113. Specifically, a current that causes an image shift in the opposite direction to the image shift by the first coil 112 is supplied to the second coil 113 to gradually increase the current value, whereby the image shift can be restored. It is not necessary to completely cancel the image shift, and it is sufficient to suppress the image shift to such an extent that the image shift falls within the allowable range.
  • Step S704 The controller 105 associates and stores the first current value in step S702 and the current value supplied to the second coil 113 in step S703.
  • Steps S705 to S708 The controller 105 specifies the current to be supplied to the second coil 113 when the second current is supplied to the first coil 112 by the same procedure as in steps S701 to S704, and stores these current values in association with each other. At this time, the position of the sample 104 is the same as in steps S701 to S704.
  • the controller 105 estimates the correspondence between the two based on the current value supplied to the first coil 112 and the current value supplied to the second coil 113 stored in steps S704 and S708.
  • the estimation method for example, the one described in FIG. 6 can be used.
  • the current value to be supplied to the first coil 112 is determined, the current value to be supplied to the second coil 113 can be determined in order to suppress the FIB image shift at that time.
  • the charged particle beam device 10 specifies the current to be supplied to the second coil 113 in order to suppress the FIB image shift when the first current is supplied to the first coil 112, and the first coil 112 is further specified.
  • the current supplied to the second coil 113 is specified to suppress the FIB image shift when the second current is supplied to the
  • the charged particle beam device 10 further estimates the correspondence between the current flowing through the first coil 112 and the current flowing through the second coil 113 according to each current value. That is, since the FIB image shift is directly suppressed, the current value to be supplied to the second coil 113 can be accurately obtained.
  • FIG. 8 is a flow chart for explaining the operation when the charged particle beam device 10 changes the acceleration voltage of the SEM column 100. It is assumed that the charged particle beam device 10 has already determined the current to be supplied to the second coil 113 in order to suppress the FIB image shift according to the procedure described in the first and second embodiments. Each step of FIG. 8 will be described below.
  • the controller 105 demagnetizes the magnetic field of the objective lens as in step S501 (S801).
  • the controller 105 changes the acceleration voltage of the SEM column 100 (S802). For example, when changing the measurement conditions, the acceleration voltage may be changed. As the accelerating voltage changes, the characteristics of the objective also need to be changed accordingly. Therefore, the controller 105 changes the value of the current supplied to the first coil 112 in accordance with the changed acceleration voltage (S803).
  • the controller 105 determines the current value to be supplied to the second coil 113 corresponding to the current value to be supplied to the first coil 112 in accordance with the correspondence specified in advance.
  • the controller 105 suppresses the FIB image shift by causing the current to flow to the second coil 113.
  • FIG. 9 is a block diagram of an objective lens of the SEM column 100 provided in the charged particle beam device 10 according to the fourth embodiment of the present invention.
  • the charged particle beam device 10 according to the fourth embodiment includes the third coil 150 and the third pole piece 114 in addition to the configurations described in the first and second embodiments.
  • the first coil 112 is disposed between the first pole piece 110 and the second pole piece 111 to form a non-immersed magnetic lens 120 having a peak of magnetic field strength in the SEM column 100.
  • the second coil 113 is placed outside the second pole piece 111 to form an immersion type magnetic lens 151 having a peak of magnetic field strength between the SEM column 100 and the sample 104.
  • the third pole piece 114 is disposed outside the second pole piece 111 as viewed from the path of the electron beam.
  • the second pole piece 111 and the third pole piece 114 form a magnetic path surrounding the second coil 113.
  • the second coil 113 has a function of forming a magnetic field lens more strongly than the configuration described in the first embodiment.
  • the third coil 150 is disposed outside the second pole piece 111 and is used to suppress FIB image shift.
  • the third coil 150 compared with the first coil 112 and the second coil 113, the number of turns of the coil wire can be smaller and smaller.
  • the current supplied to the third coil 150 to suppress the FIB image shift can be determined by the same method as in the first and second embodiments.
  • the third coil 150 can be configured as a part of the SEM column 100 or can be disposed in the sample chamber 102.
  • the second coil 113 can be used to form a magnetic field lens, and can be used to suppress FIB image shift as in the first to third embodiments.
  • the second coil 113 can suppress the FIB image shift that occurs when the first coil 112 forms a non-immersed magnetic lens, and the third coil 150 can also suppress it.
  • the second coil 113 serves both to form a magnetic lens and to suppress a stray magnetic field, and therefore, the number of turns is the largest among the three coils. That is, the number of turns of the second coil ⁇ the number of turns of the first coil ⁇ the number of turns of the third coil.
  • the number of turns is smaller than that of the first coil 112. That is, the first coil turn number ⁇ the second coil turn number.
  • FIG. 10 is a modification of FIG.
  • the third coil 150 can be configured as a part of the SEM column 100 as shown in FIG. 9 or can be disposed in the sample chamber 102 as shown in FIG.
  • FIG. 11 is a block diagram of an objective lens of the SEM column 100 provided in the charged particle beam device 10 according to the fifth embodiment of the present invention.
  • One or both of the first coil 112 and the second coil 113 can be divided into a plurality of coils.
  • FIG. 11 shows an example in which both the first coil 112 and the second coil 113 are divided into two coils.
  • the power consumption of the coil may be kept constant.
  • the direction of the current of each divided coil may be changed while keeping the magnitude of the current flowing through the coil constant. For example, in FIG. 11, it is possible to cancel the generated magnetic field by supplying currents in opposite directions to the coils 112A and 112B.
  • current having the same direction or different currents having opposite sizes may be supplied to the coils 112A and 112B. In either case, by keeping the current value constant, the power consumption can be kept constant.
  • the number of turns of each divided coil may be the same or different. If the number of turns is the same, current control can be simplified.
  • the performance as a coil is the same for split coils and single coils.
  • the present invention is not limited to the embodiments described above, but includes various modifications.
  • the embodiments described above are described in detail in order to explain the present invention in an easy-to-understand manner, and are not necessarily limited to those having all the configurations described.
  • part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment.
  • CutAndSee a mode in which a sample is analyzed three-dimensionally by alternately repeating FIB processing and SEM observation quickly.
  • the present invention can be used in this CutAndSee to realize more accurate analysis.
  • CutAndSee the sample height at the time of SEM observation changes as FIB processing is repeated. Therefore, it is necessary to adjust the focus of the SEM column 100 during analysis.
  • the SEM objective lens magnetic field in the sample chamber 102 slightly changes and the FIB shifts, the processing accuracy by the FIB is deteriorated. Therefore, the influence of the SEM objective lens magnetic field is suppressed by the second coil 113 or the third coil 150 during Cut And See. Thereby, the processing accuracy of FIB can be improved.
  • FIG. 12 is an example of an FIB observation image when performing CutAndSee.
  • An area 170 is an area to be processed by FIB.
  • the processing accuracy can be improved by correcting the deviation of the reference position 131 every time the Cut And See process is performed, for example.
  • the controller 105 can be configured using hardware such as a circuit device on which the function is mounted, or can be configured by the arithmetic device executing software on which the function is mounted. it can.

Abstract

La présente invention permet d'obtenir, au moyen d'une configuration simple, un dispositif à faisceau de particules chargées complexe pouvant réduire le champ magnétique de fuite d'une pièce polaire magnétique constituant un objectif d'un MEB. Ce dispositif à faisceau de particules chargées : acquiert une image d'observation de faisceau d'ions tout en amenant un courant à circuler dans une première bobine constituant l'objectif ; exécute, pour une pluralité de valeurs de courant, des opérations de réduction de déplacement d'image de l'image de faisceau d'ions en amenant un courant à circuler dans une seconde bobine ; et détermine le courant devant être amené à circuler dans la seconde bobine en fonction de différences entre les opérations.
PCT/JP2017/031788 2017-09-04 2017-09-04 Dispositif à faisceau de particules chargées WO2019043945A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE112017007787.7T DE112017007787B4 (de) 2017-09-04 2017-09-04 Ladungsträgerstrahlvorrichtung
CN201780094059.3A CN111033676B (zh) 2017-09-04 2017-09-04 带电粒子线装置
JP2019538910A JP6812561B2 (ja) 2017-09-04 2017-09-04 荷電粒子線装置
US16/641,035 US11430630B2 (en) 2017-09-04 2017-09-04 Charged particle beam apparatus
PCT/JP2017/031788 WO2019043945A1 (fr) 2017-09-04 2017-09-04 Dispositif à faisceau de particules chargées

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US20200219697A1 (en) 2020-07-09
CN111033676B (zh) 2022-08-30
CN111033676A (zh) 2020-04-17
US11430630B2 (en) 2022-08-30
JP6812561B2 (ja) 2021-01-13
DE112017007787B4 (de) 2023-09-28
DE112017007787T5 (de) 2020-04-23

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