WO2019041250A1 - 电子器件及包括其的测距装置和电子设备 - Google Patents

电子器件及包括其的测距装置和电子设备 Download PDF

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Publication number
WO2019041250A1
WO2019041250A1 PCT/CN2017/099989 CN2017099989W WO2019041250A1 WO 2019041250 A1 WO2019041250 A1 WO 2019041250A1 CN 2017099989 W CN2017099989 W CN 2017099989W WO 2019041250 A1 WO2019041250 A1 WO 2019041250A1
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Prior art keywords
electronic device
substrate
photo
bonding
units
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PCT/CN2017/099989
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English (en)
French (fr)
Inventor
郑国光
洪小平
王铭钰
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深圳市大疆创新科技有限公司
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Application filed by 深圳市大疆创新科技有限公司 filed Critical 深圳市大疆创新科技有限公司
Priority to PCT/CN2017/099989 priority Critical patent/WO2019041250A1/zh
Priority to CN201780071962.8A priority patent/CN109997227A/zh
Publication of WO2019041250A1 publication Critical patent/WO2019041250A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation

Definitions

  • the present invention generally relates to the field of integrated circuits, and more particularly to an electronic device and a distance measuring device and an electronic device therewith.
  • the ranging technique includes detecting an object by using an electromagnetic wave or a light beam.
  • the ranging technique generally emits electromagnetic waves (or emitted light) to illuminate a target and receive its echo (or reflected light), thereby obtaining a distance from the target to the electromagnetic wave (or light) emission point, and a rate of change of the distance (radial Speed, position, height, etc.
  • This type of ranging technology can be used for autonomous driving, map mapping, and drones.
  • a distance measuring device (such as a radar) using the above ranging technology generally includes a transmitter and a receiver, and an electromagnetic wave (or light) is emitted through the transmitter, which is received by the receiver after being reflected by the object, and the transmitter and the receiver are synchronized.
  • the clock control can accurately obtain the time of the electromagnetic wave (or light) from the emitter to the surface of the object to be tested and then to the receiver, so that the distance of the distance measuring device from the object to be measured can be obtained. Based on this principle, plus a scanning structure, with a certain coverage, constitutes a complete distance measuring device.
  • the current distance measuring device is generally mechanically rotated, divided into upper and lower parts, the lower part is fixed, the upper part is a scanning mechanism, the upper part includes a window part, and the window part is a transmitting-receiving structure, which contains multiple sets of one-to-one correspondence. Transmitter and receiver.
  • the upper portion rotates at a certain frequency of 360 degrees, and only one set of transmitters and receivers are in operation at the same time.
  • the current distance measuring device needs to introduce a plurality of mechanical components, in particular, a movable component, and thus has low reliability.
  • the current ranging device has a complicated structure, and each line transmitter and receiver need to be separately aligned, which makes the assembly difficult, and thus leads to low production efficiency.
  • the current ranging device includes multiple sets of transmitters and receivers as described above, and the material cost is very high, coupled with the labor cost caused by complicated assembly, thus resulting in high cost of the current distance measuring device.
  • the present invention has been made in order to solve at least one of the above problems.
  • the present invention provides an electronic device that can be used to implement a receiver of a distance measuring device, in conjunction with a transmitter that will be described later in the specification, thereby implementing a distance measuring device that overcomes the problems described above.
  • the electronic device includes: a first substrate having a first surface and a second surface opposite to each other, the first surface of the first substrate being formed with a plurality of photovoltaics distributed in an array a sensing unit, a second surface of the first substrate is formed with a plurality of first bonding pads disposed corresponding to each of the photo-sensing units; and a second substrate having a third surface a plurality of readout circuit units are formed in the second substrate, and a third surface of the second substrate is formed with a plurality of second bond pads disposed corresponding to each of the readout circuit units;
  • Each of the plurality of readout circuit units and each of the plurality of photo-sensing units respectively correspond to each other, and a first bond pad and a corresponding portion disposed corresponding to each of the photo-sensing units
  • Each of the correspondingly disposed second bonding pads of the readout circuit unit is eutectic bonded to each other.
  • an electrical connection unit is formed between each of the photo-sensing unit and the first bonding pad disposed corresponding thereto.
  • the electrical connection unit is a through silicon via.
  • the photo-sensing unit comprises a photomultiplying device.
  • the photomultiplying device comprises an avalanche photodiode.
  • the readout circuit unit is a complementary metal oxide semiconductor readout circuit.
  • the eutectic bonding of the first bonding pad and the second bonding pad is any one of the following: aluminum-germanium bonding, gold-germanium bonding, gold-silicon bonding Combination, gold-tin bonding, indium-tin bonding, aluminum-silicon bonding, lead-tin bonding.
  • the third surface of the second substrate is further formed with a wire bonding pad.
  • the first substrate is a silicon substrate or a non-silicon substrate.
  • the first substrate is a silicon substrate, and the wavelength of the light beam detected by the photo-sensing unit includes 905 nanometers; or the first substrate is a non-silicon substrate, and the photo-sensing unit The wavelength of the detected beam includes 1550 nm.
  • planar size of the photo-sensing unit and the readout circuit unit are the same.
  • At least one of a microlens, an anti-reflection film, and a filter is formed on a light incident side of each of the photo-sensing units.
  • the first surface of the first substrate is further formed with a plurality of image sensor units
  • the second substrate is further formed with a plurality of image sensor readout circuit units, the image sensor readout circuit unit
  • Each of the image sensor units and each of the image sensor units respectively correspond to each other.
  • the second surface of the first substrate is formed with a plurality of third bonding pads disposed corresponding to each of the image sensor units
  • the third surface of the second substrate is formed with a plurality of a fourth bonding pad disposed corresponding to each of the image sensor readout circuit units, a third bond pad disposed corresponding to each of the image sensor units, and each of the image sensor readout circuit units A correspondingly disposed fourth bond pad is eutectic bonded to each other.
  • the first surface of the first substrate includes an M ⁇ N block region, and each of the M ⁇ N block regions includes a first sub-region and a second sub-region that do not overlap each other.
  • the photo sensing unit is located in the first sub-area, and the image sensor unit is located in the second sub-area, wherein M and N are both positive integers and M ⁇ N is greater than 1.
  • the image sensor unit is a complementary metal oxide semiconductor image sensor.
  • each of the image sensor units comprises a set of RGB units or sets of RGB units.
  • a distance measuring device comprising a light emitting device and a reflected light receiving device, wherein: the light emitting device is configured to emit an angle of view covering the distance measuring device The optical signal of the FOV; the reflected light receiving device comprising the electronic device according to any one of the above, wherein the reflected light receiving device is configured to receive a partial signal reflected by the optical signal after encountering the object to be tested, according to the Part of the signal acquires distance information of the object to be tested.
  • the light emitting device comprises a light emitter and a light beam expanding unit.
  • the optical beam expanding unit is configured to perform at least one of collimating, expanding, homogenizing, and expanding the field of light emitted by the light emitter.
  • an electronic device comprising the electronic device of any of the above, the electronic device comprising a drone, a self-driving car or a robot.
  • the electronic device integrates the photo-sensing unit and the readout circuit unit in a hybrid integrated manner, so that the design is very flexible in design selection.
  • the electronic device according to the embodiment of the present invention forms a good physical and electrical connection between the photo-sensing unit and the read-out circuit unit by means of eutectic bonding, which facilitates the control of the size of the electronic device and facilitates miniaturization of the electronic device.
  • the distance measuring device implemented based on the electronic device according to the embodiment of the present invention can obtain distance information of all points in the entire field of view, and can achieve very fast response compared to the conventional single-point scanning mechanical rotary ranging device. Speed, without any mechanical moving parts, improves reliability, reduces production costs and complexity, and increases production efficiency.
  • FIG. 1 is a schematic view showing an exemplary structure of a distance measuring device and a working principle of a light emitting device provided by the present invention
  • FIG. 2 is a schematic diagram showing an exemplary structure of a distance measuring device and a working principle of a reflected light receiving device provided by the present invention
  • FIG. 3 shows a cross-sectional view of an electronic device in accordance with an embodiment of the present invention
  • FIG. 4 illustrates a cross-sectional view of a first substrate of an electronic device in accordance with an embodiment of the present invention
  • Figure 5 illustrates a cross-sectional view of a second substrate of an electronic device in accordance with an embodiment of the present invention
  • FIG. 6 is a schematic view showing a eutectic bonding of a first bonding pad and a second bonding pad of an electronic device according to an embodiment of the present invention
  • FIG. 7 shows an exemplary plan layout of an electronic device in accordance with an embodiment of the present invention.
  • composition and/or “comprising”, when used in the specification, is used to determine the presence of the features, integers, steps, operations, components and/or components, but does not exclude one or more The presence or addition of features, integers, steps, operations, components, components, and/or groups.
  • the term “and/or” includes any and all combinations of the associated listed items.
  • the current distance measuring devices are generally mechanically rotated, and have many disadvantages such as low reliability, low production efficiency, and high cost.
  • the present invention provides a solid-state distance measuring device, and the distance measuring device 100 provided by the present invention will be described below with reference to FIGS. 1 and 2, respectively.
  • the distance measuring device 100 provided by the present invention includes a light emitting device 110 and a reflected light receiving device 120.
  • the light emitting device 110 is configured to emit an optical signal, and the optical signal emitted by the light emitting device 110 covers the field of view angle FOV of the ranging device 100; the reflected light receiving device 120 is configured to receive the light emitted by the light emitting device 110.
  • the light-emitting device 110 and its operation principle will be described below with reference to Fig. 1, and the reflected light-receiving device 120 and its operation principle will be described with reference to FIG.
  • the light emitting device 110 may include a light emitter 111 and a light expanding unit 112.
  • the light emitter 111 is used to emit light
  • the light beam expanding unit 112 is configured to perform at least one of the following on the light emitted by the light emitter 111: collimation, beam expansion, uniform light, and a field of view.
  • the light emitted by the light emitter 111 passes through at least one of collimation, beam expansion, uniform light, and spread FOV of the light expansion unit 112.
  • the emitted light becomes divergent and evenly distributed, and can cover a certain two-dimensional angle in the scene.
  • the emitted light can cover at least part of the surface of the object to be tested.
  • the light emitted by the light emitter 111 may be a laser or a non-laser. Accordingly, the light emitter 111 may be a laser emitter that emits laser light or a non-laser emitter that emits non-laser light.
  • the light emitter 111 can be a laser diode. In another example, the light emitter 111 can be a Vertical Cavity Surface Emitting Laser (VCSEL).
  • VCSEL Vertical Cavity Surface Emitting Laser
  • Vertical cavity surface emitting lasers are surface emitting lasers, which are easier to implement wafer level surface array lasers. In addition, vertical cavity surface emitting lasers have a small wavelength temperature coefficient, which is less than 1/5 of the temperature coefficient of a typical laser wavelength. Therefore, a vertical cavity is used.
  • a surface emitting laser as a device for emitting laser light can make the emitted laser wavelength more stable.
  • the light emitter 111 can also be a high power light emitting diode.
  • a chip in a multi-die package form may be preferentially used to improve the uniformity of the light source.
  • wavelength of the light emitted by the light emitter 111 in one example, light having a wavelength between 895 nanometers and 915 nanometers can be selected, for example, light having a wavelength of 905 nanometers. In another example, light having a wavelength between 1540 nanometers and 1560 nanometers can be selected, such as light having a wavelength of 1550 nanometers. In other examples, other suitable wavelengths of light may also be selected depending on the application scenario and various needs.
  • the optical beam expanding unit 112 can be implemented using a one-stage or multi-stage beam expanding system. Wherein, the optical beam expanding process may be reflective or transmissive, or a combination of the two. In one example, a holographic filter can be employed to obtain a large angle beam of multiple sub-beams.
  • a laser diode array can also be employed, with laser diodes forming multiple beams of light, as well as lasers similar to beam expansion (as mentioned above for VCSEL array lasers).
  • a two-dimensionally adjustable microelectromechanical system (MEMS) lens can also be used to reflect the emitted light, and the angle between the mirror and the beam is changed by driving the MEMS micromirror to make the angle of the reflected light The moment is changing, thus diverging into a two-dimensional angle to cover the entire surface of the object to be tested.
  • MEMS microelectromechanical system
  • the ranging device is configured to sense external environmental information, such as distance information of an environmental target, angle information, reflection intensity information, speed information, and the like.
  • the ranging device of the embodiment of the present invention can be applied to a mobile platform, and the ranging device can be installed on a platform body of the mobile platform.
  • the mobile platform with the distance measuring device can measure the external environment, for example, measuring the distance between the mobile platform and the obstacle for obstacle avoidance and the like, and performing two-dimensional or three-dimensional mapping on the external environment.
  • the mobile platform includes at least one of an unmanned aerial vehicle, a car, and a remote control car.
  • the distance measuring device is applied to an unmanned aerial vehicle
  • the platform body is the body of the unmanned aerial vehicle.
  • the platform body is the body of the automobile.
  • the distance measuring device is applied to the remote control car
  • the platform body is the body of the remote control car.
  • the operation principle of the light-emitting device 110 of the distance measuring device according to the embodiment of the present invention is exemplarily described above, and the operation principle of the reflected-light receiving device 120 of the distance measuring device according to the embodiment of the present invention will be described below with reference to FIG.
  • the light emitted by the light emitting device 110 can cover at least part of the surface or even the entire surface of the object to be tested, correspondingly, the light reflects after reaching the surface of the object, and the reflected light receiving device 120 to which the reflected light arrives is not a single point but is formed. Array-distributed.
  • the reflected light receiving device 120 includes a photo-sensing unit array 121 and a lens 122. After the light reflected from the surface of the object to be tested reaches the lens 122, based on the principle of lens imaging, the corresponding photo-sensing unit in the photo-sensing unit array 121 can be reached, and then received by the photo-sensing unit to cause photoelectricity. Sensed photoelectric response.
  • the light emitter 111 and the photo-sensing unit array 121 are subjected to a clock control module (for example, a clock as shown in FIG. 1 included in the distance measuring device 100).
  • the control module 130, or a clock control module other than the distance measuring device 100 performs synchronous clock control on them, so that the distance at which the reflected light arrives and the distance measuring device 100 can be obtained according to the time of flight (TOF) principle.
  • TOF time of flight
  • the photo-sensing unit since it is not a single point but a photo-sensing unit array 121, it passes through a data processing module (for example, the data processing module 140 shown in FIG. 1 included in the ranging device 100, or ranging)
  • the data processing of the data processing module other than the device 100 can obtain the distance information of all points in the field of view of the entire ranging device, that is, the point cloud data of the distance of the external environment facing the ranging device.
  • the present invention provides an electronic device which can be used to implement the reflected light receiving device of the distance measuring device provided by the present invention.
  • the reflected light receiving device of the distance measuring device provided by the present invention includes the electronic device which will be described below.
  • the electronic device to be described below can also be used to implement a light receiving device in any ranging device or system or other electronic device, and is not limited only to the reflection used to implement the ranging device provided by the present invention.
  • Light receiving device The electronic device will be specifically described below with reference to FIGS. 3 through 7.
  • FIG. 3 shows a cross-sectional view of an electronic device 300 in accordance with an embodiment of the present invention.
  • the electronic device 300 includes a first substrate 301 and a second substrate 302.
  • the first substrate 301 has a first surface 3011 and a second surface 3012 opposite to each other.
  • the first surface 3011 of the first substrate 301 is formed with a plurality of photo-sensing units 303 distributed in an array.
  • the second surface 3012 of the first substrate 301 is formed with a plurality of first bonding pads 304 disposed corresponding to each of the photo-sensing units 303.
  • the second substrate 302 has a third surface 3021.
  • a plurality of readout circuit units 305 are formed in the second substrate 302.
  • the third surface 3021 of the second substrate is formed with a plurality of second bonding pads 306 disposed corresponding to each of the readout circuit units 305.
  • Each of the plurality of readout circuit units 305 and each of the plurality of photo-sensing units 303 respectively correspond to each other, and the first bond pad 304 and the read corresponding to each of the photo-sensing units 303 are disposed.
  • Each of the correspondingly disposed second bonding pads 306 of the out-of-circuit unit 305 is eutectic bonded to each other.
  • the first substrate 301 where the photo-sensing unit 303 is located may be a silicon-based substrate or a non-silicon-based substrate.
  • the array formed by the photo-sensing unit 303 and the read-out circuit chip formed by the read-out circuit unit 305 can be completed at the same fab, or can be completed at different fabs, and finally Two chips are bonded together.
  • an electrical connection unit 307 is formed between each photo-sensing unit 303 and a first bonding pad 304 disposed therewith, as shown in FIG. Based on the electrical connection unit, the signal sensed by the photo-sensing unit 303 can be conducted from the first surface 3011 of the first substrate 301 to the second surface 3012 and then re-conducted to the readout circuit unit 305 based on the bonding.
  • the electrical connection unit 307 can be a through silicon via (TSV), as shown in the first substrate 301 as shown in FIG.
  • TSV through silicon via
  • a via may be etched on a silicon wafer by Deep Reactive Ion Etching (DRIE), and a layer of silicon dioxide may be formed on the sidewall by oxidation to serve as an insulating layer.
  • DRIE Deep Reactive Ion Etching
  • the via is filled with copper (or tungsten) as a wire to direct the signal from one side of the wafer to the other.
  • photo-sensing unit 303 can include a photomultiplying device.
  • the photomultiplier device can convert a weak optical signal into an electrical signal, thereby improving the sensitivity of the electronic device 300.
  • the photomultiplying device can include an avalanche photodiode (APD), ie, the photo-sensing unit 303 can be implemented as an APD unit, as shown in FIG.
  • the avalanche photodiode is a photosensitive element used in laser communication, and has high sensitivity to detection of an optical signal, and can detect an optical signal well.
  • the photo-sensing unit 303 can also be implemented by any other suitable device capable of photo-sensing.
  • the first substrate 301 where the photo-sensing unit 303 is located is a silicon-based substrate, and the photo-inductance The wavelength of the light beam detected by the measuring unit 303 may range from 900 nm to 1000 nm or from 800 nm to 900 nm. Further, in another example, the first substrate 301 where the photo-sensing unit 303 is located is a silicon-based substrate, and the wavelength of the light beam detected by the photo-sensing unit 303 may be any wavelength within a range of 895 nm to 915 nm. .
  • the first substrate 301 where the photo-sensing unit 303 is located is a silicon-based substrate, and the wavelength of the light beam detected by the photo-sensing unit 303 may be 905 nm.
  • the reflected light device 120 described in FIG. 2 may be a silicon-based device whose wavelength of the detected light beam may include 905 nanometers.
  • the first substrate 301 where the photo-sensing unit 303 is located is a non-silicon-based substrate, and the photo-sensing unit The wavelength of the light beam detected by 303 can range from 1500 nanometers to 1600 nanometers.
  • the first substrate 301 where the photo-sensing unit 303 is located is a non-silicon-based substrate, and the wavelength of the light beam detected by the photo-sensing unit 303 may be any wavelength within the range of 1540 nm to 1560 nm. .
  • the first substrate 301 where the photo-sensing unit 303 is located is a non-silicon-based substrate, and the wavelength of the light beam detected by the photo-sensing unit 303 may be 1550 nm.
  • the reflected light device 120 described in FIG. 2 may be a non-silicon based device whose wavelength of the detected light beam may include 1550 nm.
  • readout circuit unit 305 can be a complementary metal oxide semiconductor readout circuit (CMOS ROIC).
  • CMOS ROIC complementary metal oxide semiconductor readout circuit
  • the second bond pad 306 can be an aluminum for bond, as shown in FIG.
  • the first bond pad 304 can be a crucible as shown in FIG.
  • the photo-sensing device (for example, APD unit) shown in FIG. 4 and the readout circuit device (ROIC unit) shown in FIG. 5 are wafer-level bonded by the first bonding pad 304 and the second bonding pad 306.
  • the electronic device 300 is obtained, for example, an APD-CMOS ROIC chip is obtained, as shown in FIG.
  • the eutectic bonding of the first bonding pad 304 and the second bonding pad 306 is a ⁇ -aluminum bonding, and the ⁇ of the second surface 3012 and the aluminum of the third surface 3021 are performed, for example, at about 420 degrees. Eutectic bonding of bismuth-aluminum.
  • the signal of the photo-sensing unit 303 can be introduced into the readout circuit unit 305 corresponding thereto.
  • the advantage of aluminum-germanium eutectic bonding is that the solder ball will melt during the brazing process, causing the solder ball to overflow to the periphery, resulting in an increase in the occupied area; During the bonding process, the metal does not melt and overflow, which facilitates the control of the size and facilitates the miniaturization of the photo-sensing unit (for example, the APD unit).
  • aluminum-germanium eutectic bonding has high bonding strength compared to other bonding methods, and aluminum and germanium are prepared by deposition and etching, and these two materials are also compatible with integrated circuit processes.
  • the eutectic bonding of the first bonding pad 304 and the second bonding pad 306 may also be other eutectic bonding, such as any of the following: gold-germanium bonding, gold- Silicon bonding, gold-tin bonding, indium-tin bonding, aluminum-silicon bonding, lead-tin bonding, and the like.
  • the third surface 3021 of the second substrate 302 is further formed with a wire bonding pad 308. As shown in Figure 3 and Figure 5. Based on the wire bonding pad 308, a connection between the electronic device 300 and other devices can be achieved.
  • the photo-sensing unit 303 formed on the first surface 3011 of the first substrate 301 is distributed in an array, for example, includes a total of M ⁇ N photo-sensing units 303 (for example, a photo-inductance unit of M rows and N columns). 303, wherein M and N are both positive integers, and M ⁇ N>1) are respectively located in M ⁇ N regions of the first surface 3011, and each of the photo-sensing units can work independently.
  • the number of readout circuit units 305 formed in the second substrate 302 is the same as the number of photo-sensing units 303 formed on the first surface 3011 of the first substrate 301, and these readout circuit units 305 and photo-sensing Unit 303 has a one-to-one correspondence.
  • planar size of the photo-sensing unit 303 and the planar size of the readout circuit unit 305 may be the same to ensure that they are in one-to-one correspondence at the time of bonding (it may be understood by those skilled in the art that "identical” herein may be understood as It is roughly the same because it is difficult to achieve the exact same process.)
  • the photo-sensing unit 303 converts the optical signal into a current signal
  • the current signal can always be transmitted to the readout circuit unit 305 corresponding to the photo-sensing unit 303, so that the read-out circuit unit
  • the current signal is sampled, processed, and output.
  • the arrayed photo-sensing unit the light reflected from the surface of the object to be tested can be received by different photo-sensing units, and then read by different readout circuit units, thereby obtaining the distance of the entire object surface. information.
  • At least one of a microlens, an anti-reflection film, and a filter is formed on the light incident side of each photo-sensing unit 303. See FIG. 3, FIG. 4, and FIG. An arc area 309 above unit 303.
  • the signal-to-noise ratio and optical sensitivity can be improved based on the microlens, the anti-reflection film, and the filter formed on the light incident side of each photo-sensing unit 303.
  • the first surface 3011 of the first substrate 301 is further formed with a plurality of image sensor units (not shown in FIG. 3), and a plurality of image sensor readout circuit units are further formed in the second substrate 302. (Not shown in FIG. 3), each of the image sensor readout circuit units and each of the image sensor units respectively correspond to each other.
  • the electronic device 300 includes both the photo-sensing unit and the image sensor unit, so that the electronic device 300 includes both the photo-sensing function and the image capturing function, and the depth information point of the object to be measured can be generated based on the photo-sensing function.
  • the cloud image based on the image acquired by the image sensor, can identify the object and the like.
  • the image sensor unit can be a complementary metal oxide semiconductor image sensor (CMOS IS, abbreviated as CIS). In other examples, the image sensor unit can also be other suitable image sensors.
  • CMOS IS complementary metal oxide semiconductor image sensor
  • CIS complementary metal oxide semiconductor image sensor
  • the photo-sensing unit 303 and the image sensor unit are both formed on the first surface 3011 of the first substrate 301, and the positional relationship between them is sufficient as long as they do not affect each other's independent operation.
  • the positional relationship between the photo-sensing unit 303 and the image sensor unit may be such that the first surface 3011 of the first substrate 301 may include an M ⁇ N block region, each of which includes a photo-sensing unit 303 and An image sensor unit.
  • each of the M ⁇ N block regions may include a first sub-region and a second sub-region that do not overlap each other, and the photo sensing unit 303 may be located in the first sub-region, and the image sensor unit may Located in the second sub-region (where M and N are positive integers, and M ⁇ N is greater than 1), as shown in FIG. 7 .
  • FIG. 7 illustrates an exemplary plan layout of an electronic device including an image sensor in accordance with an embodiment of the present invention.
  • the electronic device 300 includes an image sensor unit (for example, a CIS unit) and an image sensor readout circuit unit (for example, CIS ROIC) corresponding thereto, and a photo-sensing unit (for example, APD). Unit) and its corresponding readout circuit unit (eg APD ROIC).
  • the image sensor unit and the photo-sensing unit are located in different sub-areas so that they do not affect their respective operations.
  • the second surface 3012 of the first substrate 301 is formed with a plurality of third bonding pads (not shown in FIG. 3) corresponding to each of the image sensor units, and a third of the second substrate 302.
  • the surface 3021 is formed with a plurality of fourth bonding pads (not shown in FIG. 3) corresponding to each of the image sensor readout circuit units, and a third bonding pad corresponding to each of the image sensor units and The fourth bonding pads disposed corresponding to each of the image sensor readout circuit units are eutectic bonded to each other.
  • the eutectic bonding connection of the third bonding pad and the fourth bonding pad is similar to the eutectic bonding connection of the first bonding pad and the second bonding pad, and is not described herein again for the sake of brevity.
  • the signal of the image sensor can be transmitted to the image sensor readout circuit corresponding thereto based on the eutectic bonding connection of the third bonding pad and the fourth bonding pad.
  • a good electrical or physical connection may also be made between the image sensor unit and its corresponding image sensor readout circuit unit by any other suitable means.
  • the image sensor unit may include a color image sensor, and may also include a black and white image sensor.
  • an image sensor unit eg, a CIS unit
  • the image sensor unit can employ a Bayer color filtering scheme.
  • the electronic device integrates the photo-sensing unit and the readout circuit unit in a hybrid integrated manner, so that the design is very flexible in design selection.
  • the electronic device forms a good physical and electrical connection between the photo-sensing unit and the read-out circuit unit by means of eutectic bonding, which facilitates the control of the size of the electronic device and facilitates miniaturization of the electronic device.
  • the electronic device may further include an image sensor to take into account the photo-sensing function and the image capturing function.
  • an electronic device comprising the electronic device previously described in connection with Figures 3-7. Further, the electronic device may include the distance measuring device previously described in connection with FIGS. 1 through 2. Illustratively, the electronic device may be the mobile platform mentioned above, including, for example, a drone, a self-driving car or a robot.
  • the disclosed apparatus and method may be implemented in other manners.
  • the device embodiments described above are merely illustrative.
  • the division of the unit is only a logical function division.
  • there may be another division manner for example, multiple units or components may be combined or Can be integrated into another device, or some features can be ignored or not executed.
  • Various component embodiments of the present invention may be implemented in hardware or at one or more locations Software module implementations running on the processor, or a combination of them.
  • a microprocessor or digital signal processor may be used in practice to implement some or all of the functionality of some of the modules in accordance with embodiments of the present invention.
  • the invention can also be implemented as a device program (e.g., a computer program and a computer program product) for performing some or all of the methods described herein.
  • a program implementing the invention may be stored on a computer readable medium or may be in the form of one or more signals. Such signals may be downloaded from an Internet website, provided on a carrier signal, or provided in any other form.

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Abstract

一种电子器件及包括其的测距装置和电子设备。电子器件(300)包括：第一基底(301)，第一基底(301)具有彼此相对的第一表面(3011)和第二表面(3012)，第一表面(3011)形成有阵列化分布的多个光电感测单元(303)，第二表面(3012)形成有多个与光电感测单元(303)的每一个对应设置的第一键合垫(304)；以及第二基底(302)，第二基底(302)具有第三表面(3021)，第二基底(302)内形成有多个读出电路单元(305)，第三表面(3021)形成有多个与读出电路单元(305)的每一个对应设置的第二键合垫(306)；其中，多个读出电路单元(305)中的每一个与多个光电感测单元(303)中的每一个彼此各自对应，第一键合垫(304)和第二键合垫(306)彼此共晶键合连接。该电子器件采用混合集成方式使得在方案设计上选择非常灵活，且采用共晶键合方式有利于电子器件的小型化。

Description

电子器件及包括其的测距装置和电子设备
说明书
技术领域
本发明总地涉及集成电路领域，更具体地涉及一种电子器件及包括其的测距装置和电子设备。
背景技术
随着科学技术的发展，探测和测量技术应用于各种领域。其中，测距技术包括利用发射电磁波或光束等来探测目标。具体地，测距技术通常发射电磁波(或发射光)对目标进行照射并接收其回波(或反射光)，由此获得目标至电磁波(或光)发射点的距离、距离变化率(径向速度)、方位、高度等信息。这类测距技术可以用于自动驾驶、地图测绘以及无人机等。
目前采用上述测距技术的测距装置(诸如雷达)一般包括发射器和接收器，通过发射器发出电磁波(或光)，经过物体反射后被接收器接收到，而发射器和接收器通过同步时钟控制，进而可以精确得到电磁波(或光)从发射器到待测物体表面再到接收器的时间，从而可以得到测距装置距离待测物体的距离。基于该原理，再加上一个扫描结构，具有一定的覆盖范围，即构成了完整的测距装置。
目前的测距装置一般为机械旋转式的，分上下两部分，下部分固定，上部分为扫描机构，上部分包括窗口部分，窗口部分为发射-接收结构，其内含有多组一一对应的发射器和接收器。在该测距装置的工作过程中，上部分以一定的频率360度旋转，在同一时刻只有一组发射器和接收器处于工作状态。
因此，目前的测距装置需要引入多个机械部件，尤其是具有可动部件，因此可靠性低。再者，目前的测距装置结构复杂，每一线发射器和接收器都需要分别对准，造成自动化组装的难度，因此导致生产效率低。此外，目前的测距装置如上所述包括多组发射器和接收器，物料成本非常高，再加上复杂组装带来的人力成本，因此导致目前的测距装置成本较高。
发明内容
为了解决上述问题中的至少一个而提出了本发明。本发明提供一种电子器件，其可以用于实现测距装置的接收器，配合稍后将在说明书中描述的发射器，从而实现测距装置，能够克服上面描述的问题。具体地，本发明提供的电子器件包括：第一基底，所述第一基底具有彼此相对的第一表面和第二表面，所述第一基底的第一表面形成有阵列化分布的多个光电感测单元，所述第一基底的第二表面形成有多个与所述光电感测单元的每一个对应设置的第一键合垫；以及第二基底，所述第二基底具有第三表面，所述第二基底内形成有多个读出电路单元，所述第二基底的第三表面形成有多个与所述读出电路单元的每一个对应设置的第二键合垫；其中，所述多个读出电路单元中的每一个与所述多个光电感测单元中的每一个彼此各自对应，与所述光电感测单元的每一个对应设置的第一键合垫和与所述读出电路单元的每一个对应设置的第二键合垫彼此共晶键合连接。
在一个实施例中，每个所述光电感测单元和与其对应设置的第一键合垫之间形成有电连接单元。
在一个实施例中，所述电连接单元为硅通孔。
在一个实施例中，所述光电感测单元包括光电倍增器件。
在一个实施例中，所述光电倍增器件包括雪崩光电二极管。
在一个实施例中，所述读出电路单元为互补金属氧化物半导体读出电路。
在一个实施例中，所述第一键合垫和所述第二键合垫的共晶键合为以下中的任一项：铝-锗键合、金-锗键合、金-硅键合、金-锡键合、铟-锡键合、铝-硅键合、铅-锡键合。
在一个实施例中，所述第二基底的第三表面还形成有打线焊盘。
在一个实施例中，所述第一基底为硅基底或非硅基底。
在一个实施例中，所述第一基底为硅基底，所述光电感测单元所检测的光束的波长包括905纳米；或者，所述第一基底为非硅基底，所述光电感测单元所检测的光束的波长包括1550纳米。
在一个实施例中，所述光电感测单元的平面尺寸和所述读出电路单元 的平面尺寸相同。
在一个实施例中，每个所述光电感测单元的光入射侧还形成有微透镜、增透膜、滤光片中的至少一项。
在一个实施例中，所述第一基底的第一表面还形成有多个图像传感器单元，所述第二基底内还形成有多个图像传感器读出电路单元，所述图像传感器读出电路单元中的每一个与所述图像传感器单元中的每一个彼此各自对应。
在一个实施例中，所述第一基底的第二表面形成有多个与所述图像传感器单元的每一个对应设置的第三键合垫，所述第二基底的第三表面形成有多个与所述图像传感器读出电路单元的每一个对应设置的第四键合垫，与所述图像传感器单元的每一个对应设置的第三键合垫和与所述图像传感器读出电路单元的每一个对应设置的第四键合垫彼此共晶键合连接。
在一个实施例中，所述第一基底的第一表面包括M×N块区域，所述M×N块区域中的每个区域包含互不重叠的第一子区域和第二子区域，所述光电传感单元位于所述第一子区域中，所述图像传感器单元位于所述第二子区域中，其中M、N均为正整数，且M×N大于1。
在一个实施例中，所述图像传感器单元为互补金属氧化物半导体图像传感器。
在一个实施例中，每个所述图像传感器单元包括一组RGB单元或多组RGB单元。
根据本发明另一方面，提供了一种测距装置，所述测距装置包括光发射设备和反射光接收设备，其中：所述光发射设备用于发射覆盖所述测距装置的视场角FOV的光信号；所述反射光接收设备包括上述任一项所述的电子器件，所述反射光接收设备用于接收所述光信号遇到待测物体后反射回来的部分信号，根据所述部分信号获取所述待测物体的距离信息。
在一个实施例中，所述光发射设备包括光发射器和光扩束单元。
在一个实施例中，所述光扩束单元用于对所述光发射器发射的光进行准直、扩束、匀光、扩视场中的至少一种处理。
根据本发明再一方面，提供了一种包括上述任一项所述的电子器件的电子设备，所述电子设备包括无人机、自动驾驶汽车或机器人。
根据本发明实施例的电子器件采用混合集成的方式集成光电感测单元和读出电路单元，使得方案在设计上选择非常灵活。此外，根据本发明实施例的电子器件采用共晶键合的方式形成光电感测单元和读出电路单元的良好的物理和电学连接，便于电子器件尺寸的控制，有利于电子器件的小型化。此外，基于根据本发明实施例的电子器件实现的测距装置能够得到整个视场内所有点的距离信息，相较于传统的单点扫描的机械旋转式测距装置，可以达到非常快的响应速度，且不需要任何机械的可动部件，提高了可靠性，降低了生产成本和复杂度，提高了生产效率。
附图说明
图1示出本发明提供的测距装置的示例性结构及光发射设备的工作原理示意图；
图2示出本发明提供的测距装置的示例性结构及反射光接收设备的工作原理示意图；
图3示出根据本发明实施例的电子器件的剖视图；
图4示出根据本发明实施例的电子器件的第一基底的剖视图；
图5示出根据本发明实施例的电子器件的第二基底的剖视图；
图6示出根据本发明实施例的电子器件的第一键合垫与第二键合垫共晶键合的示意图；以及
图7示出根据本发明实施例的电子器件的示例性平面布局图。
具体实施方式
为了使得本发明的目的、技术方案和优点更为明显，下面将参照附图详细描述根据本发明的示例实施例。显然，所描述的实施例仅仅是本发明的一部分实施例，而不是本发明的全部实施例，应理解，本发明不受这里描述的示例实施例的限制。基于本发明中描述的本发明实施例，本领域技术人员在没有付出创造性劳动的情况下所得到的所有其它实施例都应落入本发明的保护范围之内。
在下文的描述中，给出了大量具体的细节以便提供对本发明更为彻底的理解。然而，对于本领域技术人员而言显而易见的是，本发明可以无需 一个或多个这些细节而得以实施。在其他的例子中，为了避免与本发明发生混淆，对于本领域公知的一些技术特征未进行描述。
应当理解的是，本发明能够以不同形式实施，而不应当解释为局限于这里提出的实施例。相反地，提供这些实施例将使公开彻底和完全，并且将本发明的范围完全地传递给本领域技术人员。
在此使用的术语的目的仅在于描述具体实施例并且不作为本发明的限制。在此使用时，单数形式的“一”、“一个”和“所述/该”也意图包括复数形式，除非上下文清楚指出另外的方式。还应明白术语“组成”和/或“包括”，当在该说明书中使用时，确定所述特征、整数、步骤、操作、元件和/或部件的存在，但不排除一个或更多其它的特征、整数、步骤、操作、元件、部件和/或组的存在或添加。在此使用时，术语“和/或”包括相关所列项目的任何及所有组合。
为了彻底理解本发明，将在下列的描述中提出详细的步骤以及详细的结构，以便阐释本发明提出的技术方案。本发明的较佳实施例详细描述如下，然而除了这些详细描述外，本发明还可以具有其他实施方式。
如前所述，目前的测距装置一般为机械旋转式的，有可靠性低、生产效率低、成本高等诸多缺点。基于此，本发明提供一种固态的测距装置，下面分别参照图1和图2描述本发明所提供的测距装置100。
如图1和图2所示，本发明所提供的测距装置100包括光发射设备110和反射光接收设备120。其中，光发射设备110用于发射光信号，且光发射设备110所发射的光信号覆盖测距装置100的视场角FOV；反射光接收设备120用于接收光发射设备110发射的光遇到待测物体后反射的光，并计算测距装置100距离所述待测物体的距离。下面将参考图1描述光发射设备110及其工作原理，并参考图2描述反射光接收设备120及其工作原理。
如图1所示，光发射设备110可以包括光发射器111和光扩束单元112。其中，光发射器111用于发射光，光扩束单元112用于对光发射器111所发射的光进行以下中的至少一项：准直、扩束、匀光和扩视场。光发射器111发出的光经过光扩束单元112的准直、扩束、匀光和扩FOV中的至少 一项，使得出射光变得发散、分布均匀，能够覆盖场景中的一定的二维角度，如图1所示的，出射光能够覆盖待测物体的至少部分表面。
在一个实施例中，光发射器111所发射的光可以为激光，也可以为非激光。相应地，光发射器111可以为发射激光的激光发射器，也可以为发射非激光的非激光发射器。
在一个示例中，光发射器111可以为激光二极管。在另一个示例中，光发射器111可以为垂直腔面发射激光器(Vertical Cavity Surface Emitting Laser，简称为VCSEL)。垂直腔面发射激光器是面发射型激光器，更易实现晶圆级面阵列激光器，此外，垂直腔面发射激光器的波长温度系数小，是一般激光器波长温度系数的1/5以下，因此，采用垂直腔面发射激光器作为发射激光的装置可以使得发射的激光波长更为稳定。
在又一个示例中，光发射器111也可以为高功率的发光二极管。具体地，可以优先采用多裸片(multi-die)封装形式的芯片，以提高光源的均匀性。
对于光发射器111所发射光的波长，在一个示例中，可以选择波长位于895纳米到915纳米之间的光，例如选择905纳米波长的光。在另一个示例中，可以选择波长位于1540纳米到1560纳米之间的光，例如选择1550纳米波长的光。在其他示例中，也可以根据应用场景和各种需要选择其他合适波长的光。
在一个示例中，光扩束单元112可以采用一级或多级扩束系统来实现。其中，该光扩束处理可以是反射式的或透射式的，也可以是二者的结合。在一个示例中，可以采用全息滤光片(holographic filter)来得到多个子光束组成的大角度光束。
在又一个示例中，也可以采用激光二极管阵列，利用激光二极管形成多束光，也可以得到类似于扩束的激光(正如上面提到VCSEL阵列激光器)。
在再一个示例中，也可以采用二维角度可调的微机电系统(MEMS)透镜，对发出的光进行反射，通过驱动MEMS微镜时刻改变自身镜面与光束间的角度，使反射光的角度时刻在变化，从而发散成一个二维的角度，以覆盖待测物体的整个表面。
该测距装置用于感测外部环境信息，例如，环境目标的距离信息、角度信息、反射强度信息、速度信息等。具体地，本发明实施方式的测距装置可应用于移动平台，所述测距装置可安装在移动平台的平台本体。具有测距装置的移动平台可对外部环境进行测量，例如，测量移动平台与障碍物的距离用于避障等用途，和对外部环境进行二维或三维的测绘。在某些实施方式中，移动平台包括无人飞行器、汽车和遥控车中的至少一种。当测距装置应用于无人飞行器时，平台本体为无人飞行器的机身。当测距装置应用于汽车时，平台本体为汽车的车身。当测距装置应用于遥控车时，平台本体为遥控车的车身。
以上示例性地描述了根据本发明实施例的测距装置的光发射设备110的工作原理，下面参照图2描述根据本发明实施例的测距装置的反射光接收设备120的工作原理。
由于光发射设备110发射的光能够覆盖待测物体的至少部分表面甚至整个表面，相应地，光到达物体表面后发生反射，反射光到达的反射光接收设备120也不是单点的，而是成阵列化分布的。
如图2所示，反射光接收设备120包括光电感测单元阵列121和透镜122。其中，从待测物体表面反射回来的光到达透镜122后，基于透镜成像的原理，可以到达光电感测单元阵列121中的相应的光电感测单元，然后被光电感测单元所接收，引起光电感测的光电响应。
由于自光出射到光电感测单元接收到反射光这一过程中，光发射器111和光电感测单元阵列121受时钟控制模块(例如包括在测距装置100内的如图1所示的时钟控制模块130，或者测距装置100之外的时钟控制模块)对它们进行同步时钟控制，因而根据飞行时间(TOF)原理，能够得到反射光到达的点与测距装置100的距离。
此外，由于光电感测单元不是单点的，而是光电感测单元阵列121，所以经过数据处理模块(例如包括在测距装置100内的如图1所示的数据处理模块140，或者测距装置100之外的数据处理模块)的数据处理能够得到整个测距装置视场内所有点的距离信息，即测距装置所面向的外界环境距离的点云数据。
这样，可以一帧一帧地快速扫描环境的完整的距离信息。因此相较于 传统的单点扫描的测距装置，可以达到非常快的响应速度。
以上示例性地描述了本发明所提供的测距装置的结构及其工作原理。为了实现本发明所提供的测距装置的反射光接收设备，本发明提供了一种电子器件，该电子器件能够用于实现本发明所提供的测距装置的反射光接收设备。换言之，本发明所提供的测距装置的反射光接收设备包括下面将描述的电子器件。
然而，应理解，下面将描述的电子器件也能用于实现任何测距装置或系统或其他电子设备中的光接收设备，而不仅仅局限于用于实现本发明所提供的测距装置的反射光接收设备。下面将参照图3到图7具体描述该电子器件。
图3示出了根据本发明实施例的电子器件300的剖视图。如图3所示，电子器件300包括第一基底301和第二基底302。
其中，第一基底301具有彼此相对的第一表面3011和第二表面3012。第一基底301的第一表面3011形成有阵列化分布的多个光电感测单元303。第一基底301的第二表面3012形成有多个与光电感测单元303的每一个对应设置的第一键合垫304。
第二基底302具有第三表面3021。第二基底302内形成有多个读出电路单元305。第二基底的第三表面3021形成有多个与读出电路单元305的每一个对应设置的第二键合垫306。
其中，多个读出电路单元305中的每一个与多个光电感测单元303中的每一个彼此各自对应，与光电感测单元303的每一个对应设置的第一键合垫304和与读出电路单元305的每一个对应设置的第二键合垫306彼此共晶键合(bond)连接。
由于电子器件300的光电感测单元303和读出电路单元305采用混合集成的方式(即光电感测单元303和读出电路单元305不在同一基底内)，使得方案在设计上选择非常灵活，例如光电感测单元303所在的第一基底301可以是硅基基底，也可以为非硅基基底。
此外，在工艺制程选择上，光电感测单元303形成的阵列以及读出电路单元305形成的读出电路芯片可以在同一家晶圆厂完成，也可以分别在不同晶圆厂完成，最终再将两片芯片键合在一起。
在一个示例中，每个光电感测单元303和与其对应设置的第一键合垫304之间形成有电连接单元307，如图3所示的。基于该电连接单元，光电感测单元303所感测到的信号可以从第一基底301的第一表面3011传导至第二表面3012，然后基于键合再传导至读出电路单元305。
基于此，光电感测单元303将光信号转化成电流信号后，可由与之对应的读出电路单元将该光电流进行采样、处理和输出。在一个示例中，电连接单元307可以为硅通孔(through silicon via，TSV)，如图4所示出的第一基底301中所示的。在一个示例中，可以在硅片上利用深反应离子刻蚀(Deep Reactive Ion Etching，DRIE)刻蚀出通孔，再在侧壁通过氧化的方式形成一层二氧化硅，作为绝缘层，再以铜(或钨)填充通孔，作为导线，将信号从硅片一面导到另一面。
在一个示例中，光电感测单元303可以包括光电倍增器件。光电倍增器件可以将微弱的光信号转换成电信号，从而可以提高电子器件300的灵敏度。
示例性地，光电倍增器件可以包括雪崩光电二极管(APD)，即光电感测单元303可以实现为APD单元，如图4所示的。雪崩光电二极管是在激光通信中使用的光敏元件，其对于光信号检测的灵敏度较高，能够很好地检测光信号。
在其他示例中，光电感测单元303也可以采用其他任何合适的能够进行光电感测的器件来实现。
由于硅基底的APD或光电二极管的敏感波长峰值在900纳米到1000纳米或者800纳米到900纳米，因此，在一个示例中，光电感测单元303所在的第一基底301是硅基基底，光电感测单元303所检测的光束的波长范围可以为900纳米到1000纳米或者800纳米到900纳米。进一步地，在另一个示例中，光电感测单元303所在的第一基底301是硅基基底，光电感测单元303所检测的光束的波长可以为895纳米到915纳米范围之内的任一波长。进一步地，在又一个示例中，光电感测单元303所在的第一基底301是硅基基底，光电感测单元303所检测的光束的波长可以为905纳米。基于此，图2所述的反射光设备120可以为硅基设备，其所检测的光束的波长可以包括905纳米。
类似地，由于非硅基底的APD或光电二极管的敏感波长峰值在1500纳米到1600纳米，因此，在一个示例中，光电感测单元303所在的第一基底301是非硅基基底，光电感测单元303所检测的光束的波长范围可以为1500纳米到1600纳米。进一步地，在另一个示例中，光电感测单元303所在的第一基底301是非硅基基底，光电感测单元303所检测的光束的波长可以为1540纳米到1560纳米范围之内的任一波长。进一步地，在又一个示例中，光电感测单元303所在的第一基底301是非硅基基底，光电感测单元303所检测的光束的波长可以为1550纳米。基于此，图2所述的反射光设备120可以为非硅基设备，其所检测的光束的波长可以包括1550纳米。
在一个示例中，读出电路单元305可以为互补金属氧化物半导体读出电路(CMOS ROIC)。
在一个示例中，第二键合垫306可以为键合铝(Al for bond)，如图5所示的。相应地，第一键合垫304可以为锗，如图4所示的。将图4所示的光电感测器件(例如APD单元)与图5所示的读出电路器件(ROIC单元)通过第一键合垫304与第二键合垫306进行晶圆级键合，即可得到电子器件300，例如得到APD-CMOS ROIC芯片，如图6所示的。
在该示例中，第一键合垫304和第二键合垫306的共晶键合为锗-铝键合，利用第二表面3012的锗和第三表面3021的铝例如在420度左右进行锗-铝的共晶键合。这样，可以将光电感测单元303的信号引入到与之相对应的读出电路单元305中。
与铟锡钎焊的方式相比较，铝-锗共晶键合的优势在于：锡球在钎焊过程中，会发生融化，造成锡球向四周外溢，造成所占面积增加；而铝-锗键合过程中，不会发生金属融化而流溢，便于尺寸的控制，有利于光电感测单元(例如APD单元)的小型化。此外，与其他键合方式相比较，铝-锗共晶键合的键合强度高，且铝、锗是通过沉积和刻蚀的方式来制备的，这两种材料也和集成电路工艺兼容。
在其他示例中，第一键合垫304和第二键合垫306的共晶键合也可以为其他的共晶键合，例如为以下中的任一项：金-锗键合、金-硅键合、金-锡键合、铟-锡键合、铝-硅键合、铅-锡键合等。
在一个示例中，第二基底302的第三表面3021还形成有打线焊盘308， 如图3和图5所示的。基于该打线焊盘308，可以实现电子器件300与其他器件之间的连接。
在一个示例中，在第一基底301的第一表面3011形成的光电感测单元303呈阵列化分布，例如共包括M×N个光电感测单元303(例如M行N列的光电感测单元303，其中M和N均为正整数，且M×N>1)，分别位于第一表面3011的M×N个区域中，每个光电感测单元均能够独立工作。
同样地，在第二基底302内形成的读出电路单元305的数量与在第一基底301的第一表面3011形成的光电感测单元303的数量相同，这些读出电路单元305和光电感测单元303为一一对应的关系。
具体地，光电感测单元303的平面尺寸和读出电路单元305的平面尺寸可以相同，以保证它们在键合时一一对应(本领域技术人员可以理解，此处的“相同”可以理解为大致相同，因为工艺上难以实现完全相同)。
这样，一个光电感测单元303将光信号转换为电流信号后，该电流信号总是能传至与该光电感测单元303相对应的那一个读出电路单元305，以由该读出电路单元对该电流信号进行采样、处理和输出。而基于阵列化的光电感测单元，待测物体表面各处反射回来的光可以被不同的光电感测单元接收，进而再由不同的读出电路单元读出，从而能够得到整个物体表面的距离信息。
在进一步的实施例中，每个光电感测单元303的光入射侧还形成有微透镜、增透膜、滤光片中的至少一项，参见图3、图4和图6中光电感测单元303上方的弧线区域309。基于每个光电感测单元303的光入射侧形成的微透镜、增透膜和滤光片，可以提高信噪比和光学灵敏度。
在进一步的实施例中，第一基底301的第一表面3011还形成有多个图像传感器单元(未在图3中示出)，第二基底302内还形成有多个图像传感器读出电路单元(未在图3中示出)，图像传感器读出电路单元中的每一个与图像传感器单元中的每一个彼此各自对应。
在该实施例中，电子器件300同时包括光电感测单元和图像传感器单元，使得电子器件300同时包括光电感测功能和图像采集功能，基于光电感测功能，可生成待测物体的深度信息点云图，基于图像传感器的采集的图像，可以进行物体的识别等。
在一个示例中，图像传感器单元可以为互补金属氧化物半导体图像传感器(CMOS IS，简称为CIS)。在其他示例中，图像传感器单元也可以为其他合适的图像传感器。
光电感测单元303和图像传感器单元均形成在第一基底301的第一表面3011，它们两者之间的位置关系只要满足彼此不影响对方的独立工作即可。
示例性地，光电感测单元303和图像传感器单元的位置关系可以是这样的：第一基底301的第一表面3011可以包括M×N块区域，每块区域均包含一个光电感测单元303和一个图像传感器单元。基于此，所述M×N块区域中的每个区域可以包含互不重叠的第一子区域和第二子区域，光电传感单元303可以位于所述第一子区域中，图像传感器单元可以位于所述第二子区域中(其中M、N均为正整数，且M×N大于1)，正如图7所示的。
图7示出了根据本发明实施例的包括图像传感器的电子器件的示例性平面布局图。如图7所示，在该实施例中，电子器件300同时包括图像传感器单元(例如CIS单元)和与其对应的图像传感器读出电路单元(例如CIS ROIC)，还包括光电感测单元(例如APD单元)和与其对应的读出电路单元(例如APD ROIC)。图像传感器单元与光电感测单元位于不同子区域中，使其不影响各自的工作。
对于图像传感器单元和与其对应的图像传感器读出电路单元之间的连接，可以参见如下的示例。
在该示例中，第一基底301的第二表面3012形成有多个与图像传感器单元的每一个对应设置的第三键合垫(未在图3中示出)，第二基底302的第三表面3021形成有多个与图像传感器读出电路单元的每一个对应设置的第四键合垫(未在图3中示出)，与图像传感器单元的每一个对应设置的第三键合垫和与图像传感器读出电路单元的每一个对应设置的第四键合垫彼此共晶键合连接。
第三键合垫与第四键合垫的共晶键合连接类似于第一键合垫与第二键合垫的共晶键合连接，为了简洁，此处不再赘述。基于第三键合垫与第四键合垫的共晶键合连接，使得图像传感器的信号能够传至与其对应的图像传感器读出电路。
在其他示例中，图像传感器单元和与其对应的图像传感器读出电路单元之间也可以通过任何其他合适的方式形成良好的电连接或物理连接。
此外，对于图像传感器单元的类型，在一个示例中，图像传感器单元可以包括彩色图像传感器，也可以包括黑白图像传感器。示例性地，图像传感器单元(例如CIS单元)可以包括一组RGB单元或多组RGB单元。示例性地，图像传感器单元可以采用拜耳颜色滤波方案。
基于上面的描述，根据本发明实施例的电子器件采用混合集成的方式集成光电感测单元和读出电路单元，使得方案在设计上选择非常灵活。此外，根据本发明实施例的电子器件采用共晶键合的方式形成光电感测单元和读出电路单元的良好的物理和电学连接，便于电子器件尺寸的控制，有利于电子器件的小型化。进一步地，根据本发明实施例的电子器件还可包括图像传感器，从而兼顾光电感测功能和图像采集功能。
根据本发明的又一方面，还提供了一种电子设备，所述电子设备包括前文结合图3到图7所描述的电子器件。进一步地，该电子设备可以包括前文结合图1到图2描述的测距装置。示例性地，该电子设备可以是上文中所提到的移动平台，例如包括无人机、自动驾驶汽车或机器人等。
基于前文所述的根据本发明实施例的电子器件的结构和工作原理以及根据本发明实施例的测距装置的结构和工作原理，本领域技术人员可以理解根据本发明实施例的电子设备的结构和工作原理，为了简洁，此处不再赘述。
尽管这里已经参考附图描述了示例实施例，应理解上述示例实施例仅仅是示例性的，并且不意图将本发明的范围限制于此。本领域普通技术人员可以在其中进行各种改变和修改，而不偏离本发明的范围和精神。所有这些改变和修改意在被包括在所附权利要求所要求的本发明的范围之内。
本领域普通技术人员可以意识到，结合本文中所公开的实施例描述的各示例的单元及算法步骤，能够以电子硬件、或者计算机软件和电子硬件的结合来实现。这些功能究竟以硬件还是软件方式来执行，取决于技术方案的特定应用和设计约束条件。专业技术人员可以对每个特定的应用来使 用不同方法来实现所描述的功能，但是这种实现不应认为超出本发明的范围。
在本申请所提供的几个实施例中，应该理解到，所揭露的设备和方法，可以通过其它的方式实现。例如，以上所描述的设备实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，例如多个单元或组件可以结合或者可以集成到另一个设备，或一些特征可以忽略，或不执行。
在此处所提供的说明书中，说明了大量具体细节。然而，能够理解，本发明的实施例可以在没有这些具体细节的情况下实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。
类似地，应当理解，为了精简本发明并帮助理解各个发明方面中的一个或多个，在对本发明的示例性实施例的描述中，本发明的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而，并不应将该本发明的方法解释成反映如下意图：即所要求保护的本发明要求比在每个权利要求中所明确记载的特征更多的特征。更确切地说，如相应的权利要求书所反映的那样，其发明点在于可以用少于某个公开的单个实施例的所有特征的特征来解决相应的技术问题。因此，遵循具体实施方式的权利要求书由此明确地并入该具体实施方式，其中每个权利要求本身都作为本发明的单独实施例。
本领域的技术人员可以理解，除了特征之间相互排斥之外，可以采用任何组合对本说明书(包括伴随的权利要求、摘要和附图)中公开的所有特征以及如此公开的任何方法或者设备的所有过程或单元进行组合。除非另外明确陈述，本说明书(包括伴随的权利要求、摘要和附图)中公开的每个特征可以由提供相同、等同或相似目的的替代特征来代替。
此外，本领域的技术人员能够理解，尽管在此所述的一些实施例包括其它实施例中所包括的某些特征而不是其它特征，但是不同实施例的特征的组合意味着处于本发明的范围之内并且形成不同的实施例。例如，在权利要求书中，所要求保护的实施例的任意之一都可以以任意的组合方式来使用。
本发明的各个部件实施例可以以硬件实现，或者以在一个或者多个处 理器上运行的软件模块实现，或者以它们的组合实现。本领域的技术人员应当理解，可以在实践中使用微处理器或者数字信号处理器(DSP)来实现根据本发明实施例的一些模块的一些或者全部功能。本发明还可以实现为用于执行这里所描述的方法的一部分或者全部的装置程序(例如，计算机程序和计算机程序产品)。这样的实现本发明的程序可以存储在计算机可读介质上，或者可以具有一个或者多个信号的形式。这样的信号可以从因特网网站上下载得到，或者在载体信号上提供，或者以任何其他形式提供。
应该注意的是上述实施例对本发明进行说明而不是对本发明进行限制，并且本领域技术人员在不脱离所附权利要求的范围的情况下可设计出替换实施例。在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。本发明可以借助于包括有若干不同元件的硬件以及借助于适当编程的计算机来实现。在列举了若干装置的单元权利要求中，这些装置中的若干个可以是通过同一个硬件项来具体体现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。
以上所述，仅为本发明的具体实施方式或对具体实施方式的说明，本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。本发明的保护范围应以权利要求的保护范围为准。

Claims (21)

  1. 一种电子器件，其特征在于，所述电子器件包括：
    第一基底，所述第一基底具有彼此相对的第一表面和第二表面，所述第一基底的第一表面形成有阵列化分布的多个光电感测单元，所述第一基底的第二表面形成有多个与所述光电感测单元的每一个对应设置的第一键合垫；以及
    第二基底，所述第二基底具有第三表面，所述第二基底内形成有多个读出电路单元，所述第二基底的第三表面形成有多个与所述读出电路单元的每一个对应设置的第二键合垫；
    其中，所述多个读出电路单元中的每一个与所述多个光电感测单元中的每一个彼此各自对应，与所述光电感测单元的每一个对应设置的第一键合垫和与所述读出电路单元的每一个对应设置的第二键合垫彼此共晶键合连接。
  2. 根据权利要求1所述的电子器件，其特征在于，每个所述光电感测单元和与其对应设置的第一键合垫之间形成有电连接单元。
  3. 根据权利要求2所述的电子器件，其特征在于，所述电连接单元为硅通孔。
  4. 根据权利要求1所述的电子器件，其特征在于，所述光电感测单元包括光电倍增器件。
  5. 根据权利要求4所述的电子器件，其特征在于，所述光电倍增器件包括雪崩光电二极管。
  6. 根据权利要求1所述的电子器件，其特征在于，所述读出电路单元为互补金属氧化物半导体读出电路。
  7. 根据权利要求1所述的电子器件，其特征在于，所述第一键合垫和所述第二键合垫的共晶键合为以下中的任一项：铝-锗键合、金-锗键合、金-硅键合、金-锡键合、铟-锡键合、铝-硅键合、铅-锡键合。
  8. 根据权利要求1所述的电子器件，其特征在于，所述第二基底的第三表面还形成有打线焊盘。
  9. 根据权利要求1所述的电子器件，其特征在于，所述第一基底为硅基底或非硅基底。
  10. 根据权利要求9所述的电子器件，其特征在于，
    所述第一基底为硅基底，所述光电感测单元所检测的光束的波长包括905纳米；或者，
    所述第一基底为非硅基底，所述光电感测单元所检测的光束的波长包括1550纳米。
  11. 根据权利要求1所述的电子器件，其特征在于，所述光电感测单元的平面尺寸和所述读出电路单元的平面尺寸相同。
  12. 根据权利要求1所述的电子器件，其特征在于，每个所述光电感测单元的光入射侧还形成有微透镜、增透膜、滤光片中的至少一项。
  13. 根据权利要求1所述的电子器件，其特征在于，所述第一基底的第一表面还形成有多个图像传感器单元，所述第二基底内还形成有多个图像传感器读出电路单元，所述图像传感器读出电路单元中的每一个与所述图像传感器单元中的每一个彼此各自对应。
  14. 根据权利要求13所述的电子器件，其特征在于，所述第一基底的第二表面形成有多个与所述图像传感器单元的每一个对应设置的第三键合垫，所述第二基底的第三表面形成有多个与所述图像传感器读出电路单元的每一个对应设置的第四键合垫，与所述图像传感器单元的每一个对应设置的第三键合垫和与所述图像传感器读出电路单元的每一个对应设置的第四键合垫彼此共晶键合连接。
  15. 根据权利要求13所述的电子器件，其特征在于，所述第一基底的第一表面包括M×N块区域，所述M×N块区域中的每个区域包含互不重叠的第一子区域和第二子区域，所述光电传感单元位于所述第一子区域中，所述图像传感器单元位于所述第二子区域中，其中M、N均为正整数，且M×N大于1。
  16. 根据权利要求13所述的电子器件，其特征在于，所述图像传感器单元为互补金属氧化物半导体图像传感器。
  17. 根据权利要求13所述的电子器件，其特征在于，每个所述图像传感器单元包括一组RGB单元或多组RGB单元。
  18. 一种测距装置，其特征在于，所述测距装置包括光发射设备和反射光接收设备，其中：
    所述光发射设备用于发射覆盖所述测距装置的视场角FOV的光信号；
    所述反射光接收设备包括如权利要求1-17中的任一项所述的电子器件，所述反射光接收设备用于接收所述光信号遇到待测物体后反射回来的部分信号，根据所述部分信号获取所述待测物体的距离信息。
  19. 根据权利要求18所述的测距装置，其特征在于，所述光发射设备包括光发射器和光扩束单元。
  20. 根据权利要求19所述的测距装置，其特征在于，所述光扩束单元用于对所述光发射器发射的光进行准直、扩束、匀光、扩视场中的至少一种处理。
  21. 一种包括权利要求1-17中的任一项所述的电子器件的电子设备，其特征在于，所述电子设备包括无人机、自动驾驶汽车或机器人。
PCT/CN2017/099989 2017-08-31 2017-08-31 电子器件及包括其的测距装置和电子设备 WO2019041250A1 (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115706176A (zh) * 2021-08-09 2023-02-17 北京一径科技有限公司 光电探测器、设备及存储介质

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102280456A (zh) * 2011-05-11 2011-12-14 北京大学 一种红外焦平面阵列探测器集成结构及制作方法
CN102866433A (zh) * 2011-07-05 2013-01-09 泰怡凯电器(苏州)有限公司 探测自移动机器人周边障碍物的探测装置及自移动机器人
CN103745969A (zh) * 2014-01-28 2014-04-23 中国工程物理研究院电子工程研究所 光通讯互联txv 3d集成封装及封装方法
US20140225276A1 (en) * 2013-02-08 2014-08-14 Xintec Inc. Chip package
CN105990165A (zh) * 2015-02-02 2016-10-05 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5881324B2 (ja) * 2011-07-01 2016-03-09 オリンパス株式会社 固体撮像装置、固体撮像装置の制御方法、および撮像装置
DE112015001704T5 (de) * 2014-04-07 2016-12-29 Samsung Electronics Co., Ltd. Bildsensor mit hoher Auflösung, Frame-Rate und niedrigem Stromverbrauch
US9608027B2 (en) * 2015-02-17 2017-03-28 Omnivision Technologies, Inc. Stacked embedded SPAD image sensor for attached 3D information
WO2018133089A1 (zh) * 2017-01-23 2018-07-26 深圳市大疆创新科技有限公司 Tof测距系统及可移动平台

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102280456A (zh) * 2011-05-11 2011-12-14 北京大学 一种红外焦平面阵列探测器集成结构及制作方法
CN102866433A (zh) * 2011-07-05 2013-01-09 泰怡凯电器(苏州)有限公司 探测自移动机器人周边障碍物的探测装置及自移动机器人
US20140225276A1 (en) * 2013-02-08 2014-08-14 Xintec Inc. Chip package
CN103745969A (zh) * 2014-01-28 2014-04-23 中国工程物理研究院电子工程研究所 光通讯互联txv 3d集成封装及封装方法
CN105990165A (zh) * 2015-02-02 2016-10-05 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115706176A (zh) * 2021-08-09 2023-02-17 北京一径科技有限公司 光电探测器、设备及存储介质
CN115706176B (zh) * 2021-08-09 2023-12-12 北京一径科技有限公司 光电探测器、设备及存储介质

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