WO2019024328A1 - Igzo膜层的蚀刻液及其蚀刻方法 - Google Patents

Igzo膜层的蚀刻液及其蚀刻方法 Download PDF

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WO2019024328A1
WO2019024328A1 PCT/CN2017/111362 CN2017111362W WO2019024328A1 WO 2019024328 A1 WO2019024328 A1 WO 2019024328A1 CN 2017111362 W CN2017111362 W CN 2017111362W WO 2019024328 A1 WO2019024328 A1 WO 2019024328A1
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film layer
igzo film
igzo
acid
etching
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甘启明
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US15/579,936 priority Critical patent/US20190040316A1/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Definitions

  • the present invention relates to the field of production of display panels, and in particular to an etching solution for an IGZO film layer and an etching method thereof.
  • TFT Thin Film Transistor
  • AS amorphous silicon
  • ITZO Indium Gallium Zinc Oxide
  • the IGZO active layer is very sensitive to the process and environment, and is easily affected by light, temperature, etc., and is also greatly affected by the process, such as the Q of the IGZO process. -time (the time difference between the completion of the IGZO process and the next station), in the IGZO process, it is particularly affected by the IGZO etching solution, such as the etching uniformity of the etching solution itself, whether the etching solution will introduce some conductive impurities, etc., which greatly affects The stability of the IGZO-TFT device, such as IGZO Vth (on voltage) drift or abnormal leakage current.
  • IGZO Vth on voltage
  • An object of the present invention is to provide an etching solution for an IGZO film layer, which can effectively control the etching rate, make the etching rate uniform, and can stably etch the IGZO film layer without introducing some impurities affecting the electrical properties of the IGZO. Improve the stability of IGZO-TFT devices.
  • Another object of the present invention is to provide an etching method for an IGZO film layer.
  • the etching solution of the IGZO film layer can effectively control the etching rate, make the etching rate uniform, and stably etch the IGZO film layer without Will introduce some impurities that affect the electrical properties of IGZO, thus Improve the stability of IGZO-TFT devices.
  • the present invention provides an etching solution for an IGZO film layer comprising an acid, a phosphate, a hydrogen peroxide, and water; and an etchant of the IGZO film layer has a pH of not more than 5.
  • the mass percentage of the acid is 2% to 5%
  • the mass percentage of the phosphate is 5% to 10%
  • the mass percentage of the hydrogen peroxide is 15%-22 %
  • water is the balance.
  • the acid is a mixed acid of a mineral acid and an organic acid.
  • the inorganic acid is phosphoric acid, and the organic acid is at least one selected from the group consisting of acetic acid, oxalic acid, and oxalic acid.
  • the phosphate is at least one of a dihydrogen phosphate salt and a hydrogen phosphate salt.
  • the dihydrogen phosphate salt is sodium dihydrogen phosphate; the hydrogen phosphate salt is disodium hydrogen phosphate.
  • the etchant of the IGZO film layer has a pH of 3-5.
  • the present invention also provides an etching method of an IGZO film layer, comprising the steps of: contacting an IGZO film layer with an etching solution of the IGZO film layer as described above.
  • the temperature of the etching solution of the IGZO film layer is from 20 ° C to 45 ° C.
  • the etching method of the IGZO film layer is used for patterning an IGZO film layer to obtain an IGZO pattern.
  • the present invention also provides an etch solution for an IGZO film layer comprising acid, phosphate, hydrogen peroxide, and water; the pH of the etchant of the IGZO film layer does not exceed 5;
  • the mass percentage of the acid is 2% to 5%
  • the mass percentage of the phosphate is 5% to 10%
  • the mass percentage of the hydrogen peroxide is 15%. -22%
  • water is the balance;
  • the acid is a mixed acid of a mineral acid and an organic acid
  • the inorganic acid is phosphoric acid
  • the organic acid is at least one selected from the group consisting of acetic acid, oxalic acid, and oxalic acid
  • the phosphate is at least one of a dihydrogen phosphate salt and a hydrogen phosphate salt.
  • the etching solution of the IGZO film layer of the invention comprises acid, phosphate, hydrogen peroxide, and water, and the pH of the etching solution does not exceed 5, which can effectively control the etching rate and the etching rate.
  • the IGZO film layer can be stably etched without introducing some impurities that affect the electrical properties of IGZO, thereby effectively improving the stability of the IGZO-TFT device.
  • the etching method of the IGZO film layer of the present invention adopts the etching liquid of the IGZO film layer described above, can effectively control the etching rate, uniformize the etching rate, and can stably etch the IGZO film layer without introducing some influence on the IGZO electrical property.
  • the impurities can effectively improve the stability of the IGZO-TFT device.
  • FIG. 1 is a schematic flow chart of patterning an IGZO film layer by using an etching method of the IGZO film layer of the present invention
  • 2-3 is a schematic view showing a step S1 of patterning an IGZO film layer by using an etching method of the IGZO film layer of the present invention
  • 4-5 is a schematic view showing a step S2 of patterning an IGZO film layer by an etching method of the IGZO film layer of the present invention.
  • the present invention provides an etching solution for an IGZO film layer comprising an acid, a phosphate, a hydrogen peroxide, and water; and an etchant of the IGZO film layer has a pH of not more than 5.
  • the mass percentage of the acid is 2% to 5%
  • the mass percentage of the phosphate is 5% to 10%
  • the mass percentage of the hydrogen peroxide is 15%. %-22%
  • water is the balance.
  • the acid is a mixed acid of a mineral acid and an organic acid.
  • the inorganic acid is phosphoric acid
  • the organic acid is at least one selected from the group consisting of acetic acid, oxalic acid, and oxalic acid.
  • the phosphate is at least one of a dihydrogen phosphate and a hydrogen phosphate.
  • the dihydrogen phosphate salt is sodium dihydrogen phosphate
  • the hydrogen phosphate salt is disodium hydrogen phosphate
  • the etchant of the IGZO film layer has a pH of 3-5.
  • the etching solution of the IGZO film layer of the invention can effectively control the etching rate, make the etching rate uniform, and can stably etch the IGZO film layer without introducing some impurities affecting the electrical properties of the IGZO, thereby effectively improving the IGZO-TFT. Device stability.
  • the present invention also provides an etching method of an IGZO film layer based on the etching liquid of the IGZO film layer described above, comprising the step of contacting the IGZO film layer with an etching solution of the IGZO film layer as described above.
  • the etching temperature is preferably from 20 ° C to 45 ° C; that is, the IGZO film layer is contacted with the etching solution of the IGZO film layer at a temperature of from 20 ° C to 45 ° C.
  • the etching method of the IGZO film layer of the present invention is used to pattern the IGZO film layer to obtain an IGZO pattern.
  • the process of patterning the IGZO film layer by using the etching method of the IGZO film layer of the present invention specifically includes the following steps:
  • Step S1 as shown in FIG. 2-3, coating a photoresist layer 10 on the IGZO film layer 50 to be etched; exposing and developing the photoresist layer 10 to obtain a patterned photoresist pattern. 15.
  • Step S2 as shown in FIG. 4-5, the IGZO film layer 50 is formed by using the photoresist pattern 15 as a shielding layer and using an etchant of the IGZO film layer as described above at a temperature of 20 ° C to 45 ° C. Etching is performed. At this time, the IGZO film layer 50 not covered by the photoresist pattern 15 is in contact with the etching liquid of the IGZO film layer to be etched away, and the IGZO film layer 50 covered by the photoresist pattern 15 is etched away. It is retained to obtain a patterned IGZO pattern 55, and then the photoresist pattern 15 over the IGZO pattern 55 is removed.
  • the etching method of the IGZO film layer of the present invention adopts the etching liquid of the IGZO film layer described above, can effectively control the etching rate, uniformize the etching rate, and can stably etch the IGZO film layer without introducing some influence on the IGZO electrical property.
  • the impurities can effectively improve the stability of the IGZO-TFT device.
  • the etching solution of the IGZO film layer of the present invention contains acid, phosphate, hydrogen peroxide, and water, and the pH of the etching solution does not exceed 5, which can effectively control the etching rate and make the etching rate uniform.
  • the IGZO film layer can be stably etched without introducing some impurities affecting the electrical properties of the IGZO, thereby effectively improving the stability of the IGZO-TFT device.
  • the etching method of the IGZO film layer of the present invention adopts the etching liquid of the IGZO film layer described above, can effectively control the etching rate, uniformize the etching rate, and can stably etch the IGZO film layer without introducing some influence on the IGZO electrical property.
  • the impurities can effectively improve the stability of the IGZO-TFT device.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

一种IGZO膜层的蚀刻液及蚀刻方法，该蚀刻液包含酸、磷酸盐、过氧化氢及水，且该蚀刻液的pH值不超过5，可以有效控制蚀刻的速率，使蚀刻的速率均匀，能够稳定的蚀刻IGZO膜层（50），同时又不会引入一些影响IGZO电性的杂质，从而可有效提高IGZO-TFT器件的稳定性。所述IGZO膜层的蚀刻方法采用上述的IGZO膜层的蚀刻液，可以有效控制蚀刻的速率，使蚀刻的速率均匀，能够稳定地蚀刻IGZO膜层（50），同时又不会引入一些影响IGZO电性的杂质，从而可有效提高IGZO-TFT器件的稳定性。

Description

IGZO膜层的蚀刻液及其蚀刻方法 技术领域
本发明涉及显示面板的生产领域，尤其涉及一种IGZO膜层的蚀刻液及其蚀刻方法。
背景技术
随着显示技术的发展，液晶显示屏逐渐往大尺寸高分辨率的方向发展，这就代表着对像素的充电时间也越来越短，而对于像素充电起至关重要作用的是显示屏内的薄膜晶体管(Thin Film Transistor，TFT)。而TFT的特性又很大程度由有源层的性质所决定。传统的TFT器件通常采用非晶硅(a-Si，AS)作为有源层。AS-TFT器件由于发展已久，器件特性稳定，但是AS的迁移率低下，在高分辨率及高刷新频率的发展趋势下，就逐渐失去了原有的优势。另一种半导体材料铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)由于具有高迁移率、适用于大面积生产等优势而为人们所推崇，成为目前薄膜晶体管技术领域内的研究热点。IGZO有着比AS大的迁移率，从而可以使TFT有更快的充电速率，而且可以将TFT做的更小，进一步提升像素开口率，降低背光消耗，另一方面，IGZO-TFT器件本身漏电流就小，对于液晶面板本身的功耗而言也是一个益处。
但是当前IGZO-TFT器件的稳定性还有待提高，IGZO有源层对于工艺和环境非常敏感，很容易受到光照、温度等的影响，同时，其受制程的影响也很大，如IGZO制程的Q-time(完成IGZO制程至下一站点的时间差)，在IGZO当道制程，受IGZO蚀刻液的影响特别大，如蚀刻液本身的蚀刻均匀性、蚀刻液是否会引入一些导电杂质等，极大影响了IGZO-TFT器件的稳定性，如导致IGZO Vth(开启电压)漂移或漏电流异常等。
发明内容
本发明的目的在于提供一种IGZO膜层的蚀刻液，可以有效控制蚀刻的速率，使蚀刻的速率均匀，能够稳定地蚀刻IGZO膜层，同时又不会引入一些影响IGZO电性的杂质，从而提高IGZO-TFT器件的稳定性。
本发明的目的还在于提供一种IGZO膜层的蚀刻方法，采用上述的IGZO膜层的蚀刻液，可以有效控制蚀刻的速率，使蚀刻的速率均匀，能够稳定地蚀刻IGZO膜层，同时又不会引入一些影响IGZO电性的杂质，从而 提高IGZO-TFT器件的稳定性。
为实现上述目的，本发明提供了一种IGZO膜层的蚀刻液，包含酸、磷酸盐、过氧化氢、及水；所述IGZO膜层的蚀刻液的pH值不超过5。
所述IGZO膜层的蚀刻液中，所述酸的质量百分比为2％-5％，所述磷酸盐的质量百分比为5％-10％，所述过氧化氢的质量百分比为15％-22％，水为余量。
所述酸为无机酸和有机酸的混合酸。
所述无机酸为磷酸，所述有机酸选自醋酸、乙二酸、及草酸中的至少一种。
所述磷酸盐为磷酸二氢盐和磷酸氢盐中的至少一种。
所述磷酸二氢盐为磷酸二氢钠；所述磷酸氢盐为磷酸氢二钠。
所述IGZO膜层的蚀刻液的pH值为3-5。
本发明还提供一种IGZO膜层的蚀刻方法，包括步骤：将IGZO膜层与如上所述的IGZO膜层的蚀刻液接触。
所述的IGZO膜层的蚀刻液的温度为20℃-45℃。
所述的IGZO膜层的蚀刻方法，用于对IGZO膜层进行图案化处理，得到IGZO图形。
本发明还提供一种IGZO膜层的蚀刻液，包含酸、磷酸盐、过氧化氢、及水；所述IGZO膜层的蚀刻液的pH值不超过5；
其中，所述IGZO膜层的蚀刻液中，所述酸的质量百分比为2％-5％，所述磷酸盐的质量百分比为5％-10％，所述过氧化氢的质量百分比为15％-22％，水为余量；
其中，所述酸为无机酸和有机酸的混合酸；
其中，所述无机酸为磷酸，所述有机酸选自醋酸、乙二酸、及草酸中的至少一种；
其中，所述磷酸盐为磷酸二氢盐和磷酸氢盐中的至少一种。
本发明的有益效果：本发明的IGZO膜层的蚀刻液包含酸、磷酸盐、过氧化氢、及水，且该蚀刻液的pH值不超过5，可以有效控制蚀刻的速率，使蚀刻的速率均匀，能够稳定地蚀刻IGZO膜层，同时又不会引入一些影响IGZO电性的杂质，从而可有效提高IGZO-TFT器件的稳定性。本发明的IGZO膜层的蚀刻方法采用上述的IGZO膜层的蚀刻液，可以有效控制蚀刻的速率，使蚀刻的速率均匀，能够稳定地蚀刻IGZO膜层，同时又不会引入一些影响IGZO电性的杂质，从而可有效提高IGZO-TFT器件的稳定性。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本 发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为采用本发明的IGZO膜层的蚀刻方法对IGZO膜层进行图案化处理的流程示意图；
图2-3为采用本发明的IGZO膜层的蚀刻方法对IGZO膜层进行图案化处理的步骤S1的示意图；
图4-5为采用本发明的IGZO膜层的蚀刻方法对IGZO膜层进行图案化处理的步骤S2的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明提供了一种IGZO膜层的蚀刻液，包含酸、磷酸盐、过氧化氢、及水；所述IGZO膜层的蚀刻液的pH值不超过5。
具体地，所述IGZO膜层的蚀刻液中，所述酸的质量百分比为2％-5％，所述磷酸盐的质量百分比为5％-10％，所述过氧化氢的质量百分比为15％-22％，水为余量。
具体地，所述酸为无机酸和有机酸的混合酸。
进一步地，所述无机酸为磷酸，所述有机酸选自醋酸、乙二酸、及草酸中的至少一种。
具体地，所述磷酸盐为磷酸二氢盐和磷酸氢盐中的至少一种。
进一步地，所述磷酸二氢盐为磷酸二氢钠；所述磷酸氢盐为磷酸氢二钠。
优选地，所述IGZO膜层的蚀刻液的pH值为3-5。
本发明的IGZO膜层的蚀刻液可以有效控制蚀刻的速率，使蚀刻的速率均匀，能够稳定地蚀刻IGZO膜层，同时又不会引入一些影响IGZO电性的杂质，从而可有效提高IGZO-TFT器件的稳定性。
基于上述的IGZO膜层的蚀刻液，本发明还提供了一种IGZO膜层的蚀刻方法，包括步骤：将IGZO膜层与如上所述的IGZO膜层的蚀刻液接触。
具体地，优选蚀刻温度为20℃-45℃；也就是说，将IGZO膜层与IGZO膜层的蚀刻液在20℃-45℃的温度下接触。
具体地，本发明的IGZO膜层的蚀刻方法用于对IGZO膜层进行图案化处理，得到IGZO图形。
进一步地，请参阅图1，采用本发明的IGZO膜层的蚀刻方法对IGZO膜层进行图案化处理的过程具体包括如下步骤：
步骤S1、如图2-3所示，在待蚀刻的IGZO膜层50上涂布形成光刻胶层10；对所述光刻胶层10进行曝光、显影，得到图案化的光刻胶图形15。
步骤S2、如图4-5所示，以所述光刻胶图形15为遮蔽层，在20℃-45℃的温度下采用如上所述的IGZO膜层的蚀刻液对所述IGZO膜层50进行蚀刻，此时未被所述光刻胶图形15覆盖的IGZO膜层50与所述IGZO膜层的蚀刻液接触而被蚀刻掉，而被所述光刻胶图形15覆盖的IGZO膜层50被保留，从而得到图案化的IGZO图形55，然后去除所述IGZO图形55上方的光刻胶图形15。
本发明的IGZO膜层的蚀刻方法采用上述的IGZO膜层的蚀刻液，可以有效控制蚀刻的速率，使蚀刻的速率均匀，能够稳定地蚀刻IGZO膜层，同时又不会引入一些影响IGZO电性的杂质，从而可有效提高IGZO-TFT器件的稳定性。
综上所述，本发明的IGZO膜层的蚀刻液包含酸、磷酸盐、过氧化氢、及水，且该蚀刻液的pH值不超过5，可以有效控制蚀刻的速率，使蚀刻的速率均匀，能够稳定地蚀刻IGZO膜层，同时又不会引入一些影响IGZO电性的杂质，从而可有效提高IGZO-TFT器件的稳定性。本发明的IGZO膜层的蚀刻方法采用上述的IGZO膜层的蚀刻液，可以有效控制蚀刻的速率，使蚀刻的速率均匀，能够稳定地蚀刻IGZO膜层，同时又不会引入一些影响IGZO电性的杂质，从而可有效提高IGZO-TFT器件的稳定性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种IGZO膜层的蚀刻液，包含酸、磷酸盐、过氧化氢、及水；所述IGZO膜层的蚀刻液的pH值不超过5。
  2. 如权利要求1所述的IGZO膜层的蚀刻液，其中，所述IGZO膜层的蚀刻液中，所述酸的质量百分比为2％-5％，所述磷酸盐的质量百分比为5％-10％，所述过氧化氢的质量百分比为15％-22％，水为余量。
  3. 如权利要求1所述的IGZO膜层的蚀刻液，其中，所述酸为无机酸和有机酸的混合酸。
  4. 如权利要求3所述的IGZO膜层的蚀刻液，其中，所述无机酸为磷酸，所述有机酸选自醋酸、乙二酸、及草酸中的至少一种。
  5. 如权利要求1所述的IGZO膜层的蚀刻液，其中，所述磷酸盐为磷酸二氢盐和磷酸氢盐中的至少一种。
  6. 如权利要求5所述的IGZO膜层的蚀刻液，其中，所述磷酸二氢盐为磷酸二氢钠；所述磷酸氢盐为磷酸氢二钠。
  7. 如权利要求1所述的IGZO膜层的蚀刻液，其中，所述IGZO膜层的蚀刻液的pH值为3-5。
  8. 一种IGZO膜层的蚀刻方法，包括步骤：将IGZO膜层与如权利要求1所述的IGZO膜层的蚀刻液接触。
  9. 如权利要求8所述的IGZO膜层的蚀刻方法，其中，所述的IGZO膜层的蚀刻液的温度为20℃-45℃。
  10. 如权利要求8所述的IGZO膜层的蚀刻方法，其中，用于对IGZO膜层进行图案化处理，得到IGZO图形。
  11. 一种IGZO膜层的蚀刻液，包含酸、磷酸盐、过氧化氢、及水；所述IGZO膜层的蚀刻液的pH值不超过5；
    其中，所述IGZO膜层的蚀刻液中，所述酸的质量百分比为2％-5％，所述磷酸盐的质量百分比为5％-10％，所述过氧化氢的质量百分比为15％-22％，水为余量；
    其中，所述酸为无机酸和有机酸的混合酸；
    其中，所述无机酸为磷酸，所述有机酸选自醋酸、乙二酸、及草酸中的至少一种；
    其中，所述磷酸盐为磷酸二氢盐和磷酸氢盐中的至少一种。
  12. 如权利要求11所述的IGZO膜层的蚀刻液，其中，所述磷酸二氢 盐为磷酸二氢钠；所述磷酸氢盐为磷酸氢二钠。
  13. 如权利要求11所述的IGZO膜层的蚀刻液，其中，所述IGZO膜层的蚀刻液的pH值为3-5。
PCT/CN2017/111362 2017-08-04 2017-11-16 Igzo膜层的蚀刻液及其蚀刻方法 Ceased WO2019024328A1 (zh)

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