WO2019022050A1

WO2019022050A1 - Adhesive tape for semiconductor protection and method for processing semiconductor

Info

Publication number: WO2019022050A1
Application number: PCT/JP2018/027627
Authority: WO
Inventors: 亨利根川; 健二増澤
Original assignee: 積水化学工業株式会社
Priority date: 2017-07-25
Filing date: 2018-07-24
Publication date: 2019-01-31
Also published as: TWI810197B; JP7181086B2; CN110446765A; KR20200034942A; TW201918539A; JPWO2019022050A1; KR102561868B1

Abstract

The purpose of the present invention is to provide: an adhesive tape for semiconductor protection, which enables a circuit pattern on a semiconductor device to be perceived through the tape in cases where this adhesive tape is bonded to a circuit surface of the semiconductor device during a semiconductor production process, and which is capable of exhibiting high electrification suppressing performance even if subjected to a high temperature processing at 180°C or higher; and a method for processing a semiconductor, which uses this adhesive tape for semiconductor protection. The present invention is an adhesive tape for semiconductor protection, which comprises an adhesive layer and a conductive layer that is laminated on one surface of the adhesive layer, and wherein: the surface resistivity on the adhesive layer side is from 1.0 × 104 Ω/□ to 9.9 × 1013 Ω/□ (inclusive) both before and after 6-hour heating at 180°C; and the visible light transmittance as measured from the conductive layer side is 30% or more.

Description

Adhesive tape for semiconductor protection and method of processing semiconductor

The present invention can recognize a circuit pattern on a semiconductor device through a tape when attached to a circuit surface of a semiconductor device in a semiconductor manufacturing process, and can be highly charged even when subjected to a high temperature treatment of 180 ° C. or higher. The present invention relates to a pressure-sensitive adhesive tape for semiconductor protection which can exhibit suppression performance, and a method of treating a semiconductor using the pressure-sensitive adhesive tape for semiconductor protection.

In the manufacturing process of a semiconductor device, in order to facilitate handling at the time of processing and to prevent breakage, adhesive tape is applied to the circuit surface of the semiconductor device for protection. Such an adhesive tape is required to have excellent charge control performance so that the circuit is not damaged by static electricity.
As a pressure-sensitive adhesive tape excellent in antistatic performance, for example, an antistatic pressure-sensitive adhesive tape in which a conductive filler is dispersed in a pressure-sensitive adhesive layer is known (for example, Patent Documents 1 to 3).

JP 2012-007093 A Unexamined-Japanese-Patent No. 9-207259 JP, 2016-089021, A

In the manufacturing process of a semiconductor device, since the circuit pattern of a semiconductor device is recognized from the adhesive tape side and positioning at the time of processing may be performed, the adhesive tape is also required to have excellent transparency. However, the conventional antistatic pressure-sensitive adhesive tape has low transparency when it is blended with a conductive filler so as to provide sufficient antistatic performance. When such a low transparent adhesive tape is attached to a semiconductor device, there is a problem that the circuit pattern on the semiconductor device can not be recognized through the adhesive tape, making process control difficult.

In addition, with the advancement of the performance of semiconductor devices in recent years, high temperature treatment of 180 ° C. or more has come to be performed on the surface of semiconductor devices. For example, as a next-generation technology, a three-dimensional lamination technology using TSV (through-silicon via / through Si via) that achieves high performance and miniaturization of devices by laminating a plurality of semiconductor chips is attracting attention . In addition to the high density of semiconductor mounting, TSV can reduce noise and resistance by shortening the connection distance, access speed is extremely fast, and it is excellent in heat release during use. . In the production of such TSVs, it is necessary to carry out a high-temperature treatment process of 180 ° C. or more, such as bumping a thin film wafer obtained by grinding, forming a bump on the back surface, or performing reflow at the time of three-dimensional lamination. It becomes.
However, the conventional antistatic pressure-sensitive adhesive tape has a problem that when subjected to high temperature treatment at 180 ° C. or higher, the antistatic performance may be significantly reduced.

SUMMARY OF THE INVENTION In view of the above situation, the present invention can recognize a circuit pattern on a semiconductor device through a tape when applied to a circuit surface of the semiconductor device in a semiconductor manufacturing process, and is subjected to high temperature treatment of 180 ° C. or more It is an object of the present invention to provide a pressure-sensitive adhesive tape for semiconductor protection which can sometimes exhibit high charge suppression performance, and a method of treating a semiconductor using the pressure-sensitive adhesive tape for semiconductor protection.

One embodiment of the present invention has a pressure-sensitive adhesive layer and a conductive layer laminated on one side of the pressure-sensitive adhesive layer, and the surface resistivity on the side of the pressure-sensitive adhesive layer is heated at 180 ° C. for 6 hours. Semiconductor which is 1.0 × 10 ⁴ Ω / □ or more and 9.9 × 10 ¹³ Ω / □ or less both before and after, and has a visible light transmittance of 30% or more measured from the conductive layer side It is a protective adhesive tape.
The present invention will be described in detail below.

As a result of intensive investigations, the present inventors directly laminated a conductive layer of nanometer order thickness on one side of the pressure-sensitive adhesive layer, so that the pressure-sensitive adhesive layer side may be before or after high temperature treatment at 180 ° C. or higher. It has been found that the surface resistivity of the above can be adjusted within a certain range to exhibit high charge suppression performance. Moreover, it discovered that the outstanding transparency which can recognize a circuit pattern through a tape can be exhibited when it sticks on the circuit surface of a semiconductor device, and completed this invention.

The adhesive tape for semiconductor protection which is one embodiment of the present invention (hereinafter, also simply referred to as “adhesive tape”) has an adhesive layer.
The pressure-sensitive adhesive component constituting the pressure-sensitive adhesive layer is not particularly limited, and may contain any of a non-curable pressure-sensitive adhesive and a curable pressure-sensitive adhesive. Among them, it is preferable to contain a curable pressure-sensitive adhesive because the adhesive residue can be suppressed when the semiconductor device on which the circuit is formed is attached and peeled off on the surface on which the circuit is formed.

Examples of the curable pressure-sensitive adhesive include a photo-curable pressure-sensitive adhesive which is crosslinked and cured by light irradiation, and a thermosetting pressure-sensitive adhesive which is crosslinked and cured by heating.
Examples of the photocurable pressure-sensitive adhesive include a photocurable pressure-sensitive adhesive containing a polymerizable polymer as a main component and using a photopolymerization initiator as a polymerization initiator.
Examples of the thermosetting adhesive include a thermosetting adhesive having a polymerizable polymer as a main component and a thermal polymerization initiator as a polymerization initiator.

The polymerizable polymer can be obtained, for example, by the following method. That is, first, a (meth) acrylic polymer having a functional group in its molecule (hereinafter, also referred to as "functional group-containing (meth) acrylic polymer") is synthesized in advance. Then, a compound having a functional group which reacts with the above-mentioned functional group in the molecule and a radical polymerizable unsaturated bond (hereinafter referred to as “functional group-containing unsaturated compound”) in the functional group-containing (meth) acrylic polymer The polymerizable polymer can be obtained by reacting.

The said functional group containing (meth) acrylic-type polymer can be obtained by the method similar to the case of a common (meth) acrylic-type polymer as a polymer which has adhesiveness at normal temperature. That is, an acrylic acid alkyl ester and / or a methacrylic acid alkyl ester having an alkyl group carbon number usually in the range of 2 to 18 is used as a main monomer, which can be copolymerized with this and a functional group containing monomer, if necessary. It is obtained by copolymerizing with other modifying monomers in the usual way.
The weight average molecular weight of the functional group-containing (meth) acrylic polymer is usually about 200,000 to 2,000,000.

Examples of the functional group-containing monomer include carboxyl group-containing monomers such as acrylic acid and methacrylic acid, hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate, and epoxy such as glycidyl acrylate and glycidyl methacrylate Examples thereof include group-containing monomers, isocyanate group-containing monomers such as isocyanate ethyl acrylate and ethyl methacrylate methacrylate, and amino group-containing monomers such as amino ethyl acrylate and amino ethyl methacrylate.

Examples of the other copolymerizable modifying monomer include various monomers used for general (meth) acrylic polymers such as vinyl acetate, acrylonitrile and styrene.

As the functional group-containing unsaturated compound to be reacted with the functional group-containing (meth) acrylic polymer, the same functional group-containing monomer as described above according to the functional group of the functional group-containing (meth) acrylic polymer is used it can. For example, when the functional group of the functional group-containing (meth) acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer is used. When the functional group is a hydroxyl group, an isocyanate group-containing monomer is used. When the functional group is an epoxy group, a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used. Furthermore, when the functional group is an amino group, an epoxy group-containing monomer is used.

Examples of the photopolymerization initiator include those activated by irradiation with light having a wavelength of 250 to 800 nm. Examples of such photopolymerization initiators include acetophenone derivative compounds, benzoin ether compounds, ketal derivative compounds, phosphine oxide derivative compounds, bis (η5-cyclopentadienyl) titanocene derivative compounds and the like. Examples of the acetophenone derivative compounds include methoxyacetophenone and the like. Examples of the benzoin ether compounds include benzoin propyl ether and benzoin isobutyl ether. Examples of the ketal derivative compound include benzyl dimethyl ketal, acetophenone diethyl ketal and the like. Examples of the photopolymerization initiator include bis (η5-cyclopentadienyl) titanocene derivative compounds, benzophenone, Michler's ketone, chlorothioxanthone, todecyl thioxanthone, dimethylthioxanthone, diethylthioxanthone, α-hydroxycyclohexyl phenyl ketone, 2-hydroxy Photo radical polymerization initiators such as methyl phenyl propane may be mentioned. These photopolymerization initiators may be used alone or in combination of two or more.

As said thermal polymerization initiator, what generate | occur | produces the active radical which decomposes | disassembles by heat and starts superposition | polymerization hardening is mentioned. Specifically, for example, dicumyl peroxide, di-t-butyl peroxide, t-butyl peroxy benZole, t-butyl hydroperoxide, benzoyl peroxide, cumene hydroperoxide, diisopropylbenzene hydroperoxide, para Menthane hydroperoxide, di-t-butyl peroxide and the like can be mentioned.
However, in order for the curable pressure-sensitive adhesive to exhibit high heat resistance, it is preferable to use a thermal polymerization initiator having a thermal decomposition temperature of 200 ° C. or higher as the thermal polymerization initiator. As such a thermal polymerization initiator having a high thermal decomposition temperature, cumene hydroperoxide, paramenthan hydroperoxide, di-t-butyl peroxide and the like can be mentioned.
Among these thermal polymerization initiators, commercially available ones are not particularly limited, and, for example, perbutyl D, perbutyl H, perbutyl P, perpenta H (all manufactured by NOF Corporation) and the like are preferable. These thermal polymerization initiators may be used alone or in combination of two or more.

It is preferable that the said curable adhesive contains a radically polymerizable polyfunctional oligomer or monomer. By containing a radically polymerizable polyfunctional oligomer or monomer, photocurability and thermosetting are improved.
The polyfunctional oligomer or monomer is preferably one having a molecular weight of 10,000 or less, more preferably 5,000 or less so that three-dimensional reticulation of the curable adhesive can be efficiently performed by heating or light irradiation. And the number of radically polymerizable unsaturated bonds in the molecule is 2 to 20.

Examples of the polyfunctional oligomer or monomer include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy pentaacrylate, and dipentaerythritol hexaacrylate. In addition, the same methacrylates as described above may, for example, be mentioned. In addition, 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, methacrylates similar to the above, and the like can be mentioned. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.

The pressure-sensitive adhesive layer may further contain a gas generating agent that generates a gas upon stimulation. In the case of containing the above-mentioned gas generating agent, when peeling off the adhesive tape from the adherend, by giving a stimulus to generate a gas from the above-mentioned gas generating agent, more easily and without adhesive residue The adhesive tape can be peeled off.

The above gas generating agent is not particularly limited, but it is excellent in resistance to a process involving heating, and therefore, carboxylic acid compounds such as phenylacetic acid, diphenylacetic acid, triphenylacetic acid or salts thereof, 1H-tetrazole, 5-phenyl-1H- Tetrazole compounds such as tetrazole and 5,5-azobis-1H-tetrazole or salts thereof are preferred. Such a gas generating agent generates a gas by irradiation with light such as ultraviolet light, and has high heat resistance that does not decompose even at a high temperature of about 200 ° C.

When the pressure-sensitive adhesive layer contains the gas generating agent, it may further contain a photosensitizer. The photosensitizer has an effect of amplifying the stimulation of the gas generating agent with light, so that the gas can be released by irradiation with less light. In addition, gas can be released by light in a wider wavelength range.

When the pressure-sensitive adhesive layer contains the curable pressure-sensitive adhesive as a pressure-sensitive adhesive component, it may contain a silicone compound having a functional group crosslinkable with the curable pressure-sensitive adhesive. Since the silicone compound is excellent in heat resistance, the sticking of the pressure-sensitive adhesive can be suppressed even if it is subjected to a treatment accompanied by heating at 200 ° C. or more, and when exfoliated, it bleeds out to the interface of the adherend to facilitate exfoliation. Since the silicone compound has a functional group capable of crosslinking with the curable pressure-sensitive adhesive, it is chemically reacted with the curable pressure-sensitive adhesive by light irradiation or heating and is incorporated into the curable pressure-sensitive adhesive; The silicone compound does not stick to the body and cause contamination. Moreover, the effect which suppresses the adhesive residue on a to-be-adhered body is also exhibited by mix | blending a silicone compound. In addition, as a functional group which a silicone compound has and which can be bridge | crosslinked with the said curable adhesive, polymeric functional groups, such as a double bond, are mentioned, for example.

In one embodiment of the present invention, the pressure-sensitive adhesive layer preferably does not contain a conductive substance such as a conductive filler or a conductive compound. When the pressure-sensitive adhesive layer does not contain a conductive filler, it is possible to suppress the decrease in the adhesive strength due to the presence of the conductive filler and the decrease in the adhesive strength with time due to the bleeding of the conductive compound. In addition, when the pressure-sensitive adhesive layer does not contain a conductive compound, a side reaction of the conductive compound due to high-temperature treatment can be suppressed, and a decrease in adhesion and contamination of a semiconductor can be suppressed.

The thickness of the pressure-sensitive adhesive layer is not particularly limited, but a preferable lower limit is 5 μm and a preferable upper limit is 100 μm. When the thickness of the pressure-sensitive adhesive layer is in the above-mentioned range, the adherend can be protected with sufficient adhesive force, and the adhesive residue at the time of peeling can also be suppressed. The lower limit of the thickness of the pressure-sensitive adhesive layer is preferably 10 μm, and more preferably 60 μm, in order to further improve the adhesive strength and to further suppress the adhesive residue at the time of peeling.

In the pressure-sensitive adhesive tape, the conductive layer is laminated on one surface of the pressure-sensitive adhesive layer. By providing such a conductive layer, it is possible to adjust the surface resistivity on the pressure-sensitive adhesive layer side to a certain range while securing the transparency. In addition, even when subjected to high-temperature treatment at 180 ° C. or higher, high charge suppression performance can be exhibited.
The transparency and surface resistivity of the pressure-sensitive adhesive tape can be freely adjusted by adjusting the type of metal or the like constituting the conductive layer, the thickness of the conductive layer, the area of the conductive layer, and the like.

The conductive layer is not particularly limited, but is preferably made of a metal, an alloy or a metal compound from the viewpoint of easily adjusting the thickness of the conductive layer and easily achieving improvement in transparency and surface resistance of the adhesive tape. . Gold, an alloy and a metal compound may be used alone or in combination of two or more.

As a metal which can comprise the said conductive layer, metals, such as gold, silver, copper, platinum, titanium, aluminum, tin, are mentioned, for example.
When the said conductive layer consists of metals, a conductive layer may consist of a single layer or multiple layers which consist of said metals.

As an alloy which can constitute the above-mentioned electric conduction layer, an alloy containing iron and an alloy containing molybdenum are mentioned, for example.
Examples of alloys containing iron include alloys containing chromium and iron, and alloys containing chromium, nickel and iron, and specific examples include stainless steel (SUS).
As the stainless steel (SUS), specifically, for example, stainless steel (SUS 201), stainless steel (SUS 202), stainless steel (SUS 301), stainless steel (SUS 302), stainless steel (SU 303), stainless steel (SUS 304) , Stainless steel (SUS306), stainless steel (SUS310s), stainless steel (SUS316), stainless steel (SUS317), stainless steel (SUS329J11), stainless steel (SUS403), stainless steel (SUS405), stainless steel (SUS420), stainless steel Examples include steel (SUS430), stainless steel (SUS430LX), stainless steel (SUS6330) and the like.

The alloy containing molybdenum is not particularly limited as long as it contains molybdenum, but it is preferable to further contain nickel and chromium.
Although the lower limit of the content of molybdenum in the alloy containing molybdenum is not particularly limited, it is preferably 5% by weight, more preferably 7% by weight, still more preferably 9% by weight, from the viewpoint of achieving both surface resistance and transparency. % By weight is even more preferred, 13% by weight is particularly preferred, 15% by weight is very particularly preferred and 16% by weight is most preferred. The upper limit of the content of molybdenum in the alloy containing molybdenum is preferably 30% by weight, more preferably 25% by weight, and still more preferably 20% by weight from the viewpoint of facilitating the adjustment of the surface resistivity.
When the alloy containing molybdenum contains nickel and chromium, it is preferable that the molybdenum content is 5% by weight or more, the nickel content is 40% by weight or more, and the chromium content is 1% by weight or more. Specific examples of the alloy containing molybdenum include alloys such as Hastelloy (registered trademark), Inconel (registered trademark), Carpenter (registered trademark), Incoloy (registered trademark) and the like.

Specific examples of Hastelloy (registered trademark) include Hastelloy (HASTELLOY B-2), Hastelloy (HASTELLOY B-3), Hastelloy (HASTELLOY C-4), Hastelloy (HASTELLOY C-2000), and Hastelloy (HASTELLOY). C-22) Hastelloy (HASTELLOY C-276), Hastelloy (HASTELLOY G-30), Hastelloy (HASTELLOY N), Hastelloy (HASTELLOY W), Hastelloy (HASTELLOY X) and the like.

Specific examples of Inconel (registered trademark) include Inconel (Inconel 600), Inconel (Inconel 625), Inconel (Inconel 690), Inconel (Inconel 718), Inconel (Inconel X750) and the like.
Specific examples of the Carpenter (registered trademark) include Carpenter (Carpenter 20Cb3).

As an alloy which can constitute the above-mentioned electric conduction layer, an alloy containing nickel and copper, such as monel, can also be used, for example.
Specific examples of the monel include Monel (Monel 400), Monel (Monel K500), Monel (Monel R), Monel (Monel S) and the like.
When the conductive layer is made of an alloy, the conductive layer may be made of a single layer or a plurality of layers made of the alloy.

Examples of the metal compound that can constitute the conductive layer include tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide And metal oxides such as GZO) and titanium oxide (TiO).
When the said conductive layer consists of a metal compound, a conductive layer may consist of single layer or multiple layers.

The conductive layer may be a multilayer of a layer of metal, a layer of alloy, and / or a layer of metal compound.

The conductive layer is unlikely to be cracked in the conductive layer, and from the viewpoint of stably maintaining conductivity, gold, silver, copper, platinum, titanium, tin, stainless steel (SUS), molybdenum-containing alloy (such as hastelloy) , Tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), or titanium oxide (TiO) preferable. The conductive layer is more preferably made of gold, silver, copper, platinum, titanium, tin, stainless steel (SUS) from the viewpoint of further improving heat resistance, and further suppresses surface reflection to improve visibility. From the viewpoint of enhancing, it is more preferable to be made of stainless steel (SUS).

The thickness of the conductive layer is not particularly limited, but a preferable lower limit is 2 nm and a preferable upper limit is 300 nm. When the thickness of the conductive layer is in the above range, the transparency and the surface resistivity of the pressure-sensitive adhesive tape can be easily adjusted to the intended range. When the thickness of the conductive layer is 2 nm or more, the oxidation of the conductive layer when heat is applied is suppressed, and the charge suppression performance can be maintained. From the viewpoint of further enhancing charge suppression performance and transparency, the lower limit of the thickness of the conductive layer is preferably 3 nm, more preferably 100 nm, still more preferably 50 nm, particularly preferably 30 nm, and most preferably 20 nm. is there.

Although the thickness of the said conductive layer is not specifically limited, When the said conductive layer consists of metals, a preferable minimum is 2 nm, and a preferable upper limit is 50 nm. It becomes easy to adjust the transparency and the surface resistivity of the said adhesive tape in the expected range as the thickness of the conductive layer which consists of said metal being in this range. When the thickness of the conductive layer is 2 nm or more, the oxidation of the conductive layer is suppressed when heat is applied, and the charge suppression performance can be maintained. In particular, oxygen intrudes from the pressure-sensitive adhesive layer side. From the viewpoint of further enhancing the charge suppression performance and the transparency, the lower limit of the thickness of the conductive layer is preferably 3 nm, more preferably 30 nm, still more preferably 20 nm, particularly preferably 15 nm.
When the conductivity is made of an alloy, the preferable lower limit of the thickness of the conductive layer is 2 nm, and the preferable upper limit is 10 nm. It becomes easy to adjust the transparency and the surface resistivity of the said adhesive tape in the expected range as the thickness of the conductive layer which consists of said alloy is in this range. When the thickness of the conductive layer is 2 nm or more, the oxidation of the conductive layer is suppressed when heat is applied, and the charge suppression performance can be maintained. In particular, oxygen intrudes from the pressure-sensitive adhesive layer side. From the viewpoint of further enhancing the charge suppression performance and the transparency, the upper limit of the thickness of the conductive layer is preferably 7.5 nm, more preferably 5 nm.
When the said conductive layer consists of metal oxides, the preferable minimum of the thickness of the said conductive layer is 2 nm, and a preferable upper limit is 300 nm. It becomes easy to adjust the transparency and the surface resistivity of the said adhesive tape in the expected range as the thickness of the conductive layer which consists of said metal oxide is in this range. When the thickness of the conductive layer is 2 nm or more, the oxidation of the conductive layer is suppressed when heat is applied, and the charge suppression performance can be maintained. In particular, oxygen intrudes from the pressure-sensitive adhesive layer side. From the viewpoint of further enhancing the charge suppression performance and the transparency, the upper limit of the thickness of the conductive layer is preferably 100 nm, and more preferably 30 nm.

As described above, the transparency and the surface resistivity of the pressure-sensitive adhesive tape are adjusted according to the type of metal or the like constituting the conductive layer and the thickness of the conductive layer. Therefore, it is preferable to select the optimum thickness of the conductive layer for each type of metal or the like constituting the conductive layer.
<Single metal>
For example, in the case where the conductive layer has a single-layer structure of any of gold, silver, copper, platinum, titanium, aluminum, and tin, it is easy to adjust the resistance value and to easily control the charge suppression function. The preferred lower limit of the thickness of the conductive layer is 2 nm, and the preferred upper limit is 50 nm. The more preferable lower limit of the thickness of the conductive layer is 3 nm, the more preferable upper limit is 30 nm, and the still more preferable upper limit is 15 nm.
<Alloy>
For example, in the case where the conductive layer has a single-layer structure made of an alloy of stainless steel (SUS) or a molybdenum-containing alloy (such as hastelloy), it is easy to adjust the resistance value and to easily control the charge suppression function. The preferred lower limit of the thickness of the conductive layer is 2 nm, and the preferred upper limit is 10 nm. The more preferable lower limit of the thickness of the conductive layer is 3 nm, the more preferable upper limit is 7.5 nm, and the still more preferable upper limit is 5 nm.
<Metal oxide>
For example, in the case where the conductive layer has a single-layer structure made of a metal oxide of ITO, FTO, ATO, AZO, GZO, or TiO, it is easy to adjust the resistance value and to easily control the charge suppression function. The preferred lower limit of the thickness of the conductive layer is 2 nm, and the preferred upper limit is 300 nm. A more preferable upper limit of the thickness of the conductive layer is 100 nm, and a still more preferable upper limit is 30 nm.

The said conductive layer may be laminated | stacked on the whole surface of one side of the said adhesive layer, and may be laminated | stacked partially. When the conductive layer is laminated on the entire surface of one surface of the pressure-sensitive adhesive layer, the pressure-sensitive adhesive tape can exhibit uniform charge suppression performance. When the conductive layer is partially laminated on a part of one surface of the pressure-sensitive adhesive layer, the conductive layer forms a uniform pattern shape in order to provide uniform charge suppression performance. preferable. When the said conductive layer forms uniform pattern shape, high transparency can also be exhibited, exhibiting uniform charge suppression performance.

In a preferred embodiment of the present invention, the conductive layer is made of a metal having a thickness of 2 to 50 nm and made of gold, silver, copper, platinum, titanium or tin. In addition, the conductive layer is made of stainless steel having a thickness of 2 to 10 nm, a molybdenum-containing alloy (Hasteloy (registered trademark) alloy, Inconel (registered trademark) alloy, Carpenter (registered trademark) alloy, Incoloy (registered trademark) alloy, etc.) It consists of an alloy. The conductive layer is made of a metal oxide composed of tin-doped indium oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide and titanium oxide having a thickness of 2 to 300 nm. In this case, it becomes easy to adjust the transparency and surface resistivity of the pressure-sensitive adhesive tape to a desired range, and at the same time, when the heat is applied, the oxidation of the conductive layer is suppressed to make it easy to maintain the charge suppression performance high. be able to. These single metals, alloys, and metal oxides may be used alone or in combination of two or more.

The method for forming the conductive layer on the pressure-sensitive adhesive layer is not particularly limited. For example, conventionally known methods such as sputtering process, ion plating, plasma CVD process, vapor deposition process, coating process, dip process and the like may be used. it can. Among them, a sputtering process is preferable because a uniform conductive layer can be formed.
In addition, when the said adhesive tape has a base material, after forming the said conductive layer on the said base material, you may form the said adhesive layer on this conductive layer.

In the pressure-sensitive adhesive tape, a base may be laminated on the surface of the conductive layer opposite to the pressure-sensitive adhesive layer. In a preferred embodiment of the present invention, the base material is preferably in the form of a film having no holes, from the viewpoint of being able to stably carry when manufacturing a semiconductor device. The substrate is not particularly limited as long as it does not reduce the transparency of the pressure-sensitive adhesive tape. For example, a sheet made of a transparent resin such as acrylic, olefin, polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), nylon, urethane, polyimide, etc., a sheet having a mesh structure, holes The sheet etc. which were opened are mentioned.
The thickness of the substrate is not particularly limited, but is preferably 5 μm or more, more preferably 10 μm or more, and still more preferably 15 μm or more, from the viewpoint of stable transport when manufacturing a semiconductor device. Is 100 μm or less, more preferably 70 μm or less, and still more preferably 50 μm or less.

The pressure-sensitive adhesive tape has a lower limit of 1.0 × 10 ⁴ Ω / □ and an upper limit of 9.9 × 10 ¹³ on the side of the pressure-sensitive adhesive layer both before and after heating at 180 ° C. for 6 hours. It is Ω / □. When the surface resistivity is 1.0 × 10 ⁴ Ω / □ or more, a short circuit of the circuit can be suppressed when used for protection of a semiconductor device, and 9.9 × 10 ¹³ Ω / □ High charging suppression performance can be exhibited as it is the following. From the same viewpoint, the preferable lower limit of the surface resistivity on the side of the pressure-sensitive adhesive layer is 1.0 × 10 ⁶ Ω / □, and the preferable upper limit is 9.9 × 10 ¹² Ω / □. A more preferable upper limit is 9.9 × 10 ¹¹ Ω / □.
In addition, when the surface resistivity is in the above range both before and after heating at 180 ° C. for 6 hours, the pressure-sensitive adhesive tape can be subjected to a semiconductor manufacturing process including high temperature treatment at 180 ° C. or more.
In addition, the said surface resistivity can be measured by the method according to JISK7194.
The surface resistivity of the pressure-sensitive adhesive layer on the side of the pressure-sensitive adhesive layer both before and after heating at 180 ° C. for 6 hours can be controlled by adjusting the amount of oxidation of the conductive layer.

The pressure-sensitive adhesive tape preferably has a rate of change in surface resistivity on the side of the pressure-sensitive adhesive layer (surface resistivity after heating / surface resistivity before heating) before and after heating at 180 ° C. for 6 hours. × 10 or more, more preferably 5 × 10 or more, further preferably 1 × 10 ² or more. The rate of change of surface resistivity on the side of the pressure-sensitive adhesive layer (surface resistivity after heating / surface resistivity before heating) is preferably 1 × 10 ⁷ or less, more preferably 1 × 10 ⁶ or less, and further preferably Is 1 × 10 ⁵ or less, particularly preferably 1 × 10 ⁴ or less. When the rate of change is in the above range, the charge suppression function can be stably exhibited even when the method for producing a semiconductor includes a heat treatment step (for example, 180 ° C., 6 hours). The rate of change of the surface resistivity on the side of the pressure-sensitive adhesive layer (surface resistivity after heating / surface resistivity before heating) can be controlled, for example, by adjusting the amount of oxidation of the conductive layer.

The pressure-sensitive adhesive tape has a visible light transmittance of 30% or more as measured from the conductive layer side. When it is used for protection of a semiconductor device as the said visible light transmittance | permeability is 30% or more, the circuit pattern of a semiconductor device can be recognized from the adhesive tape side, and the positioning at the time of processing etc. can be performed. The visible light transmittance is preferably 40% or more, more preferably 50% or more, and usually 100% or less.
The visible light transmittance can be measured based on JIS K7105 using a haze meter (for example, “NDH-2000” manufactured by Nippon Denshoku Co., Ltd. or an equivalent thereof).
In order to adjust the visible light transmittance measured from the conductive layer side of the pressure-sensitive adhesive tape, the thickness can be adjusted according to the type of metal or the like constituting the conductive layer and the thickness of the conductive layer. For example, the metal species and thickness in the preferred embodiment facilitate adjustment of the visible light transmittance.

The pressure-sensitive adhesive tape preferably has a thermal decomposition amount of 10% by weight or less at 220 ° C. When the thermal decomposition amount at 220 ° C. is 10% by weight or less, the above-mentioned pressure-sensitive adhesive tape can be suitably provided by a semiconductor manufacturing process including high temperature treatment at 180 ° C. or higher. The thermal decomposition amount is more preferably 8% by weight or less, still more preferably 5% by weight or less.
The amount of thermal decomposition was measured by weighing a 5-10 mg tape in an aluminum pan of a thermobalance (for example, “TG / DTA 6200” manufactured by SII), in an air atmosphere (flow rate 200 mL / min), temperature increase rate 5 It can be determined from the decomposition amount at 220 ° C. when the temperature is raised from normal temperature (30 ° C.) to 400 ° C. under the condition of ° C./min. The thermal decomposition amount can be controlled by increasing the molecular weight of the pressure-sensitive adhesive and narrowing the molecular weight distribution (reducing the low molecular weight component).

The above-mentioned adhesive tape is used in a semiconductor manufacturing process to be applied to the circuit surface of a semiconductor device to protect the circuit and to prevent the circuit from being damaged by static electricity. Since the above-mentioned pressure-sensitive adhesive tape has both excellent charge control performance and transparency, when pasted on a circuit surface of a semiconductor device in a semiconductor manufacturing process, it is necessary to recognize a circuit pattern on the semiconductor device through the tape. Thus, even when subjected to high-temperature treatment at 180 ° C. or higher, high charge suppression performance can be exhibited.
A cross-sectional view schematically showing a state in which the surface of the semiconductor device on which the circuit is formed is protected by the adhesive tape is shown in FIG. In the semiconductor device 1, bumps 12 are formed on one side, and an adhesive tape 2 is attached to the side of the bumps 12. In the pressure-sensitive adhesive tape 2, the conductive layer 22 and the base material 23 are laminated on the surface of the pressure-sensitive adhesive layer 21 opposite to the side thereof attached to the semiconductor device 1.

In another embodiment of the present invention, there is provided a method of treating a semiconductor, comprising the steps of applying a pressure-sensitive adhesive tape for semiconductor protection to a circuit surface of the semiconductor, and performing a high temperature treatment of 180 ° C. or more on the semiconductor. The pressure-sensitive adhesive tape for semiconductor protection has a pressure-sensitive adhesive layer and a conductive layer laminated on one side of the pressure-sensitive adhesive layer, and the surface resistivity of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor protection is 180. 1.0 × 10 ⁴ Ω / sq or more and 9.9 × 10 ¹³ Ω / sq or less both before and after 6 hours of heating, and the visible light transmittance measured from the conductive layer side is Methods are also provided for processing semiconductors that are 30% or more.
According to this method of processing a semiconductor, it is possible to protect the circuit by adhering it to the circuit surface of the semiconductor device, and to prevent the circuit from being damaged by static electricity. Since the above-mentioned pressure-sensitive adhesive tape has both excellent charge control performance and transparency, when pasted on a circuit surface of a semiconductor device in a semiconductor manufacturing process, it is necessary to recognize a circuit pattern on the semiconductor device through the tape. Thus, even when subjected to high-temperature treatment at 180 ° C. or higher, high charge suppression performance can be exhibited.

According to the present invention, when attached to a circuit surface of a semiconductor device in a semiconductor manufacturing process, the circuit pattern on the semiconductor device can be recognized through the tape, and even when subjected to a high temperature treatment of 180 ° C. or more The adhesive tape for semiconductor protection which can exhibit high electrification control performance, and the method of processing the semiconductor using the adhesive tape for semiconductor protection can be provided.

It is sectional drawing which showed typically the state by which the surface in which the circuit of the semiconductor device was formed was protected with the adhesive tape which is one embodiment of this invention.

EXAMPLES The embodiments of the present invention will be described in more detail by way of examples, but the present invention is not limited to these examples.

Example 1
(1) Formation of Conductive Layer A conductive layer was formed on a polyethylene naphthalate (PEN) substrate by DC magnetron sputtering as a target material of Ag. Specifically, after evacuating the chamber to 5 × 10 ^-4 Pa or less, Ar gas is introduced so that the Ar occupancy rate in the chamber is 98% or more, and a conductive layer having a thickness of 15 nm is formed. It formed.

The thickness (optical film thickness) of the obtained conductive layer was measured by measuring the transmittance and performing optical simulation from the measured value. Specifically, the transmittance was measured by measuring the transmission spectrum at a wavelength of 200 to 800 nm (measurement range) using a spectrophotometer (“U4100” manufactured by Hitachi, Ltd.). Next, using the optical simulation software ("WVASE 32" manufactured by JA Woollam), the shape of the obtained transmission spectrum and the position of the peak valley were fitted to calculate the thickness of the conductive layer.

(2) Production of adhesive tape A reactor equipped with a thermometer, a stirrer, and a cooling pipe is prepared, and 90 parts by weight of 2-ethylhexyl acrylate as a (meth) acrylic acid alkyl ester in this reactor as a functional group-containing monomer After adding 10 parts by weight of hydroxyethyl methacrylate, 0.01 parts by weight of lauryl mercaptan and 80 parts by weight of ethyl acetate, the reactor was heated to start refluxing. Subsequently, 0.01 parts by weight of 1,1-bis (t-hexylperoxy) -3,3,5-trimethylcyclohexane is added as a polymerization initiator into the above reactor, and polymerization is initiated under reflux. The Next, 0.01 parts by weight of 1,1-bis (t-hexylperoxy) -3,3,5-trimethylcyclohexane is added one hour and two hours after the initiation of polymerization, and the polymerization is further initiated. Four hours after the addition, 0.05 parts by weight of t-hexylperoxypivalate was added to continue the polymerization reaction. Then, 8 hours after initiation of polymerization, an ethyl acetate solution of a functional group-containing (meth) acrylic polymer having a solid content of 55% by weight and a weight average molecular weight of 600,000 was obtained.
Reaction is performed by adding 3.5 parts by weight of 2-isocyanatoethyl methacrylate as a functional group-containing unsaturated compound to 100 parts by weight of resin solid content of an ethyl acetate solution containing the obtained functional group-containing (meth) acrylic polymer The resulting mixture was allowed to obtain a polymerizable polymer.
Thereafter, 1 part by weight of a photopolymerization initiator (Esacure One, manufactured by Nippon Shiber-Hegner Co., Ltd.) and 0.15 parts by weight of an isocyanate curing agent (Corronate L) with respect to 100 parts by weight of resin solid content of the ethyl acetate solution of the obtained polymerizable polymer The parts were mixed to obtain an ethyl acetate solution of a curable adhesive.

Apply an ethyl acetate solution of the obtained curable adhesive on a 50 μm polyethylene terephthalate (PET) film which has been subjected to a release treatment on one side with a doctor knife so that the thickness of the dry film is 40 μm, 110 The coating solution was dried by heating at 5 ° C. for 5 minutes to obtain a pressure-sensitive adhesive layer.
The obtained pressure-sensitive adhesive layer was bonded to the conductive layer side of the polyethylene naphthalate (PEN) substrate on which the conductive layer was formed, to obtain a pressure-sensitive adhesive tape.

(3) Measurement of surface resistivity The surface resistivity of the pressure-sensitive adhesive layer side of the pressure-sensitive adhesive tape was measured by a method according to JIS K7194. That is, the surface resistivity of nine points was measured by the probe of 5 mm of probe intervals which arranged the pressure-sensitive adhesive layer of the obtained pressure-sensitive adhesive tape at regular intervals in a straight line, and determined the average value as the surface resistivity.
The surface resistivity was measured before and after heating at 180 ° C. for 6 hours using an oven.

(4) Measurement of Visible Light Transmittance The visible light transmittance of the pressure-sensitive adhesive tape was measured using a haze meter (“NDH-2000” manufactured by Nippon Denshoku Co., Ltd.) based on JIS K7105.

(5) Measurement of thermal decomposition amount 5-10 mg of adhesive tape is weighed in an aluminum pan of a thermobalance (manufactured by SII, TG / DTA 6200), and the temperature rise rate is 5 ° C./in an air atmosphere (flow rate 200 mL / min). The temperature was raised from normal temperature (30.degree. C.) to 400.degree. The thermal decomposition amount at 220 ° C. at this time was determined.

(Examples 2 to 8, Comparative Examples 1 to 3)
A pressure-sensitive adhesive tape was produced in the same manner as in Example 1 except that the type and thickness of the conductive layer were as shown in Table 1, and the surface resistivity, the visible light transmittance and the thermal decomposition amount were measured.
In Table 1, SUS means stainless steel (SUS310s), and Hastelloy means Hastelloy (HASTELLOY C-276).

(Evaluation)
The pressure-sensitive adhesive tapes obtained in Examples and Comparative Examples were evaluated by the following methods.
The results are shown in Table 1.

(1) Evaluation of Recognizability of Alignment Mark The adhesive tape obtained was attached to the circuit surface of the semiconductor device having the alignment mark on the circuit surface, and the state as shown in FIG. 1 was obtained. As alignment marks, a “+” mark of 100 μm in length and 100 μm in width was used. In this state, the circuit surface of the semiconductor device was observed with a camera from the adhesive tape side (the base 23 side in FIG. 1). This operation was performed 100 times. If the alignment mark can be recognized by the camera 98 times or more out of 100 times, "◎", if the alignment mark can be recognized by the camera 95 times or more and 97 times or less "○", only 94 times or less The case was evaluated as "x".
The observation was performed using the alignment mark recognition function of a dicing apparatus (DFD6361 manufactured by Disco Corporation). At this time, the recognizability of the alignment mark was confirmed under the conditions of epi-illumination output 20 to 80% and oblique illumination output 20 to 80%.

(2) Evaluation of Yield of Semiconductor Device The pressure-sensitive adhesive tape obtained was attached to the circuit surface of the semiconductor device to obtain a state as shown in FIG. In this state, a plasma ashing process (PC-300, manufactured by SUMCO, RF output 250 W, degree of vacuum 10 to 50 Pa, gas flow rate (O ₂ ) 10 to 20 sccm) was applied to evaluate the yield of the semiconductor device. With respect to the obtained semiconductor devices, determination of non-defective product and defective product was performed by measurement of electrical characteristics and circuit operation.
When 100 semiconductor devices are processed by this method, the case where the yield (rate of non-defective product) is 98% or more is “◎”, and the yield (ratio of non-defective product) is less than 98% 95% or more When the yield (percentage of good product) was less than 95% and 90% or more, the case where the yield (percentage of good product) was less than 90% was evaluated as "x".
The evaluation of yield was not performed for Comparative Example 3 in which the alignment mark could not be recognized.

REFERENCE SIGNS LIST 1 semiconductor device 12 bump 2 adhesive tape 21 adhesive layer 22 conductive layer 23 base material

Claims

A pressure-sensitive adhesive layer, and a conductive layer laminated on one side of the pressure-sensitive adhesive layer,
The surface resistivity on the pressure-sensitive adhesive layer side is 1.0 × 10 4 Ω / □ or more and 9.9 × 10 13 Ω / □ or less both before and after heating at 180 ° C. for 6 hours, and The adhesive tape for semiconductor protection characterized by the visible light transmittance | permeability measured from the said conductive layer side being 30% or more.
The adhesive tape for semiconductor protection according to claim 1, wherein the conductive layer is made of a metal, an alloy or a metal compound.
The adhesive tape for semiconductor protection according to claim 1 or 2 whose thickness is 2 nm or more and 300 nm or less.
The conductive layer is laminated on the entire surface of one side of the pressure-sensitive adhesive layer, or partially laminated by forming a uniform pattern shape on one side of the pressure-sensitive adhesive layer. Or the adhesive tape for semiconductor protection as described in 3.
The adhesive tape for semiconductor protection according to claim 1, 2, 3 or 4, wherein a base material is laminated on the surface of the conductive layer opposite to the adhesive layer.
The adhesive tape for semiconductor protection of Claim 1, 2, 3, 4 or 5 whose thermal decomposition amount in 220 degreeC is 10 weight% or less.
The method according to claim 1, 2, 3, 4, 5, or 6, which is used to manufacture a semiconductor including a step of applying an adhesive tape to a circuit surface of a semiconductor, and a step of subjecting the semiconductor to a high temperature treatment of 180 ° C or more. Semiconductor adhesive tape.
A method of processing a semiconductor, comprising the steps of applying a pressure sensitive adhesive tape for semiconductor protection to a circuit surface of the semiconductor, and performing a high temperature treatment of 180 ° C. or more on the semiconductor,
The pressure-sensitive adhesive tape for semiconductor protection has a pressure-sensitive adhesive layer and a conductive layer laminated on one side of the pressure-sensitive adhesive layer, and the surface resistivity of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor protection is It is 1.0 × 10 4 Ω / □ or more and 9.9 × 10 13 Ω / □ or less both before and after heating at 180 ° C. for 6 hours, and the visible light transmittance measured from the conductive layer side Is 30% or more.