WO2018235626A1 - Convertisseur de guide d'ondes - Google Patents

Convertisseur de guide d'ondes Download PDF

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Publication number
WO2018235626A1
WO2018235626A1 PCT/JP2018/021965 JP2018021965W WO2018235626A1 WO 2018235626 A1 WO2018235626 A1 WO 2018235626A1 JP 2018021965 W JP2018021965 W JP 2018021965W WO 2018235626 A1 WO2018235626 A1 WO 2018235626A1
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WO
WIPO (PCT)
Prior art keywords
conductor layer
waveguide
substrate
opening
transmission line
Prior art date
Application number
PCT/JP2018/021965
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English (en)
Japanese (ja)
Inventor
片山　光亮
藤島　実
Original Assignee
国立大学法人広島大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 国立大学法人広島大学 filed Critical 国立大学法人広島大学
Publication of WO2018235626A1 publication Critical patent/WO2018235626A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions

Definitions

  • the present invention relates to waveguide transducers.
  • waveguide converters have been developed which convert high frequency signals between a transmission line on a dielectric substrate and a waveguide.
  • a back short is used to improve signal characteristics (e.g., Patent Document 1).
  • the waveguide converter (1) includes a waveguide (2), a back short (3) terminating the waveguide (2), and a waveguide (3) A first dielectric substrate (4) interposed between 2) and the back short (3) is provided.
  • the waveguide (2) is connected to one surface of the first dielectric substrate (4).
  • the back short (3) which consists of a metal block is attached to the position which opposes the waveguide (2) of the other surface.
  • the waveguide converter with the back short (3) becomes large.
  • the present invention has been made in view of the above-mentioned circumstances, and it is an object of the present invention to provide a waveguide converter which is compact and yet has good signal characteristics.
  • a waveguide converter is A substrate having at least three conductor layers; A metal housing having a waveguide which is electromagnetically coupled to a transmission line which is part of the first conductor layer and transmits a high frequency signal and which is erected on the first conductor layer located on the surface layer of the substrate; A back short portion terminating the waveguide;
  • the substrate is A second conductor layer adjacent to the first conductor layer via a dielectric layer, and a third conductor layer having an end portion terminating the waveguide in the back short portion.
  • the transmission line is Coplanar line, You may do it.
  • the back short section is The shield via is disposed at an outer peripheral portion of the back short portion and electrically connects a ground pattern of the first conductor layer and a ground pattern of the third conductor layer. You may do it.
  • the transmission line is An antenna unit disposed inside the waveguide; You may do it.
  • the metal housing is A line opening through which the transmission line is inserted between the inside of the waveguide and the outside of the waveguide; You may do it.
  • the waveguide converter according to the second aspect of the present invention is The first conductor layer located on the surface layer, the second conductor layer adjacent to the first conductor layer via the dielectric layer, and the side opposite to the side on which the first conductor layer of the second conductor layer is stacked A substrate having a third conductor layer stacked via a dielectric layer; And a metal housing erected on the first conductor layer of the substrate and provided with a waveguide.
  • At least a portion of the first conductor layer is a transmission line electromagnetically coupled to the waveguide;
  • a first opening is formed in a region corresponding to the insertion region of the waveguide,
  • a second opening is formed in a region corresponding to the first opening,
  • a shield via electrically connecting a ground pattern of the first conductor layer and a ground pattern of the third conductor layer is disposed on an outer peripheral portion of the first opening and the second opening. The region of the third conductor layer corresponding to the first opening and the second opening terminates the waveguide.
  • the signal characteristics can be improved while being compact.
  • FIG. 7 is a cross-sectional plan view of the substrate showing the arrangement of shielding vias and ground vias.
  • A) is a cross-sectional side view of a substrate and an integrated circuit cut along the line AA 'in FIG.
  • FIG. 2C is a cross-sectional side view of the metal housing and FIG. 2C is a cross-sectional side view of the substrate and the metal housing cut along the line CC ′ in FIG.
  • It is a graph which shows the example of S parameter of the waveguide converter which concerns on embodiment. It is a cross section side view of the back short part concerning a modification. It is a cross-sectional side view of the back short part which concerns on another modification.
  • a waveguide converter according to an embodiment of the present invention will be described by way of an example of a waveguide converter that converts a high frequency signal of 300 GHz band.
  • the waveguide converter 1 which concerns on this Embodiment is provided with the board
  • the waveguide converter 1 is a converter for converting a high frequency signal between the transmission line 11 on the substrate 10 and a waveguide (not shown) detachably mounted on the top of the metal housing 20.
  • the substrate 10 is a multilayer substrate including three conductor layers and three dielectric layers.
  • the substrate 10 includes a transmission line 11, a back short portion 12, and a via 15, which will be described later with reference to FIGS. 3, 6 (A) to (C) and the like.
  • the type of the substrate 10 is not particularly limited, and examples thereof include a fluorine resin substrate and a glass epoxy substrate that are generally used as high frequency circuit substrates.
  • the substrate 10 is FR4 (Flame Retardant Type 4).
  • the substrate 10 is a multilayer substrate formed by alternately laminating dielectric layers of an insulator and conductor layers of a metal. As shown in FIG. 3, the substrate 10 according to the present embodiment includes three conductor layers L1 to L3.
  • the conductor layers L1 to L3 are made of copper and have a thickness of 15 ⁇ m.
  • the distance between the conductor layers, ie, the thickness of the dielectric layers 31, 32 is about 50 ⁇ m.
  • the total thickness of the substrate 10 is about 165 ⁇ m.
  • the dielectric constant ⁇ r of the dielectric layers 31 to 33 is 3.26, and the dielectric loss tangent tan ⁇ is 0.0076.
  • the substrate 10 is manufactured by laminating the dielectric layers 31 to 33 and the conductor layers L1 to L3 as described above. Specifically, conductor layer L3 to be the third conductor layer is stacked on one surface of dielectric layer 33 which is a dielectric. As shown in FIG. 4C, almost the entire surface of the conductor layer L3 is a ground pattern. A part of the ground pattern functions as an end portion 13 of the back short portion 12 described later.
  • Dielectric layer 32 is stacked on conductor layer L3. Further, on the dielectric layer 32, the conductor layer L2 to be the second conductor layer located in the inner layer is stacked. As shown in FIG. 4B, the conductor layer L2 is almost entirely a ground pattern, like the conductor layer L3, but in that the opening O2 for forming the back short portion 12 is formed. It differs from the conductor layer L3.
  • the opening O2 and the outer shape are formed (patterned) by etching after the conductor layer L2 is stacked on the entire surface. Further, after patterning by etching, as shown in FIG. 3, vias 15 are formed in the dielectric layer 32 between the conductor layers L2 to L3. The via 15 is formed, for example, by copper plating a hole formed by a drill. The vias 15 are formed in the hatched area of FIG. 4 (C).
  • the via 15 is composed of a shield via 15a disposed adjacent to the periphery of the opening O2 and a ground via 15b excluding them.
  • the shield via 15a strengthens the ground and shields a high frequency signal transmitted from the opening O2 to the dielectric layer 32 to prevent leakage.
  • the ground via 15b connects the ground pattern of the conductor layer L2 and the ground pattern of the conductor layer L3 to strengthen the ground.
  • Dielectric layer 31 is stacked on conductor layer L2. Further, on the dielectric layer 31, the conductor layer L1 to be the first conductor layer located in the surface layer is stacked.
  • the conductor layer L1 includes a transmission line 11 and a ground pattern, as shown in FIG. 4 (A).
  • the transmission line 11 connects the input / output terminal of the integrated circuit 40 to the waveguide.
  • the ground pattern is formed along the transmission line 11 across the clearance portion, and occupies most of the portion up to the outer shape of the conductor layer L1.
  • an opening O1 having a shape (approximately the same size as the opening O2) corresponding to the opening O2 is formed.
  • the transmission line 11, the ground pattern, and the opening O1 of the conductor layer L1 are formed (patterned) by etching after the conductor layer L1 is stacked.
  • a via 15 is formed between the conductor layers L1 and L2.
  • the vias 15 between the conductor layers L1 and L2 are formed by copper plating holes formed by drilling in the same manner as the vias 15 between the conductor layers L2 and L3.
  • the vias 15 between the conductor layers L1 and L2 are formed in the hatched region in FIG. 4 (B).
  • the vias 15 between the conductor layers L1 and L2 are from the shield vias 15a disposed adjacent to the periphery of the opening O1 and the ground vias 15b excluding them.
  • the shield via 15a strengthens the ground and shields a high frequency signal transmitted from the opening O1 to the dielectric layer 31 to prevent leakage.
  • the ground via 15b connects the ground pattern of the conductor layer L1 and the ground pattern of the conductor layer L2 to strengthen the ground.
  • the vias 15 including the shielding vias 15a and the ground vias 15b may be through vias directly connecting the conductor layers L1 to L3. Further, the via 15 is not formed in the dielectric layer 31 in the lower part of the transmission line 11 between the conductor layers L1 and L2.
  • the transmission line 11 is formed in the conductor layer L1 which is a surface layer of one surface of the substrate 10, as shown in FIG. 4 (A). Ground portions are disposed on both sides of the main body portion 11 c of the transmission line 11 with the clearance portion interposed therebetween, to constitute a coplanar line.
  • the line width L of the main body portion 11c of the transmission line 11 and the width S of the clearance portion are set to 20 ⁇ m.
  • the characteristic impedance of the transmission line 11 can be adjusted by, for example, increasing or decreasing the thickness of the dielectric layer 31. Also, by increasing or decreasing the thickness of the dielectric layer 32, the characteristics of the back short portion 12 described later can be adjusted.
  • the conductor layer L2 is disposed adjacent to the conductor layer L1 via the dielectric layer 31.
  • the distance between the conductor layers L1 and L2 can be shortened to adjust the impedance of the transmission line 11, and the line width of the main portion 11c of the transmission line 11 can be reduced. Further, by shortening the distance between the conductor layers L1 and L2, it is possible to reduce the electromagnetic wave of the high frequency signal leaking from the back short portion 12 to the outside through the dielectric layer 31 under the transmission line 11.
  • One end of the transmission line 11 is a pad 11 a, and is electrically connected to a signal terminal that inputs or outputs a high frequency signal to the integrated circuit 40.
  • the other end of the transmission line 11 is an antenna unit 11 b disposed inside the opening O 1, and converts a high frequency signal.
  • the conductor layer L1 also includes pads (not shown) connected to terminals other than the signal terminals of the integrated circuit 40, that is, power terminals, ground terminals and the like.
  • the pad connected to the ground terminal is connected to the ground pattern of the conductor layer L1.
  • the back short portion 12 of the substrate 10 is provided with a shielding via 15a disposed at the outer peripheral portion and the terminal portion 13 of the conductor layer L3 as shown by a dashed dotted line in FIG. Area. More specifically, the back short portion 12 is a rectangular-shaped end portion 13 of the conductor layer L3 corresponding to the above-described shielding via 15a, the opening O1 of the conductor layer L1, and the opening O1 of the conductor layer L1. And a prismatic region filled with a dielectric.
  • the high frequency signal radiated from the antenna portion 11 b to the back short portion 12 is reflected by the end portion 13 in the back short portion 12 and is radiated into the waveguide 20 a of the metal housing 20 described later through the opening O1. . More specifically, the signal from the antenna portion 11b to the waveguide 20a and the signal reflected from the antenna portion 11b to the back short portion 12 and reflected by the terminal portion 13 of the conductor layer L3 are superimposed in the waveguide 20a. Be done.
  • the depth of the back short portion 12 that is, the distance between the conductor layers L1 to L3 is set to 1 ⁇ 4 of the effective wavelength of the high frequency signal to be converted. Therefore, the high frequency signal radiated from the antenna unit 11 b to the back shorting unit 12 is reflected by the termination unit 13 after advancing by 1 ⁇ 4 wavelength. Then, the reflected high frequency signal is further advanced by 1 ⁇ 4 wavelength and reaches the antenna unit 11 b. Therefore, the high frequency signal reflected by the back short portion 12 travels by a half wavelength. Thereby, the phase of the electric field of the reflected high frequency signal becomes the same as the phase of the high frequency signal radiated to the waveguide side. Therefore, the high frequency signal radiated to the waveguide through the waveguide 20 a is enhanced by the high frequency signal reflected by the back short 12.
  • each terminal of the integrated circuit 40 is connected to the pad of the conductor layer L1 as shown in FIG. There is.
  • FIG. 6 (B) in the BB 'cross section of FIG. 2 (A), that is, the cross section of the portion where the main portion 11c of the transmission line 11 connects the inside and the outside of the metal housing 20. Since the lower part of 11 is a ground pattern, the vias 15 connecting these are not formed between the conductor layers L1 and L2.
  • vias 15 connecting these are formed between the conductor layers L2 to L3 which are all ground patterns. Thereby, the leakage of the high frequency signal radiated to the back short portion 12 to the outside is suppressed by the shield via 15a between the conductor layers L2 to L3.
  • the integrated circuit 40 is a circuit component that inputs and outputs high frequency signals.
  • the integrated circuit 40 includes a signal terminal for inputting and outputting a high frequency signal, a power supply terminal for driving the integrated circuit 40, and a ground terminal.
  • the signal terminal of the integrated circuit 40 is connected to a pad 11 a formed at the end of the transmission line 11.
  • the power supply terminal is connected to a pad (not shown) connected to a power supply line formed on the conductor layer L1.
  • the ground terminal is connected to a pad (not shown) formed in the ground pattern of the conductor layer L1.
  • the connection method between the integrated circuit 40 and the substrate 10 is not particularly limited, but the flip chip connection as in this embodiment reduces the loss of the transmitted signal.
  • the metal housing 20 is a metal member in which the waveguide 20a which is a through-hole is formed, as shown to FIG. 1, 2 (A), 2 (B).
  • the metal housing 20 is attached on the conductor layer L1 of the substrate 10.
  • the material of the metal housing 20 is, for example, an aluminum alloy.
  • One end of the waveguide 20 a formed in the metal housing 20 is connected to the opening O 1 of the substrate 10.
  • the other end of the waveguide 20a is connected to a waveguide not shown.
  • the high frequency signal output from the integrated circuit is transmitted to the antenna unit 11 b through the transmission line 11.
  • the high frequency signal converted by the antenna unit 11 b is radiated to the waveguide via the waveguide 20 a electromagnetically coupled to the transmission line 11.
  • the high frequency signal input from the waveguide to the waveguide converter 1 is converted by the antenna unit 11 b through the waveguide 20 a.
  • the converted high frequency signal is input to the integrated circuit 40 through the transmission line 11.
  • the metal housing 20 is provided with a line opening 20b for avoiding the transmission line 11, as shown in FIGS. 2 (A) and 2 (B).
  • the width of the line opening 20 b is set wider than the line width of the main body 11 c of the transmission line 11. Thereby, the contact between the metal housing 20 and the transmission line 11 is prevented.
  • the height of the line opening 20b is preferably set low.
  • the height of the line opening 20b according to the present embodiment is set to 40 ⁇ m.
  • the metal housing 20 is provided with the notch part 20c, as shown to FIG. 2 (B).
  • the notch 20 c is formed to avoid the integrated circuit 40.
  • the lower surface of the notch 20c faces the upper surface of the integrated circuit 40 at a constant interval. Further, the lower surface of the notch 20 c overlaps a part of the upper surface of the integrated circuit 40.
  • the presence of the metal housing 20 on the top of the integrated circuit 40 can prevent the integrated circuit 40 from coming off the substrate 10 and dropping off when the waveguide converter 1 is impacted.
  • the waveguide converter 1 is configured as described above, and the high frequency signal output from the integrated circuit 40 is a waveguide of the metal housing 20 via the transmission line 11 which is a coplanar line.
  • the radiation is emitted into the waveguide 20 connected to the metal housing 20.
  • the high frequency signal input to the waveguide 20 a in the metal housing 20 through the waveguide is converted by the antenna unit 11 b. Then, the converted high frequency signal is input to the integrated circuit 40 through the transmission line 11.
  • FIG. 7 is a graph showing an example of S-parameters of the waveguide converter 1 according to the present embodiment. As shown in FIG. 7, S-parameters S11 and S22 indicating reflection loss are less than ⁇ 10 dB around 300 GHz. The S-parameters S21 and S12 indicating the insertion loss are -0.5 dB or more at around 300 GHz. Therefore, it can be seen that good characteristics with small loss are exhibited.
  • the waveguide converter 1 according to the present embodiment since the back short portion 12 terminated in the substrate 10 is formed, another component for back short is connected to the outside of the substrate. Therefore, the signal conversion characteristic can be improved while being compact. Further, in the waveguide converter 1 according to the present embodiment, since the high frequency signal is transmitted using the transmission line 11 which is a coplanar line, it is possible to reduce the loss of the transmitted high frequency signal.
  • the number of conductor layers was set to three layers, it is not restricted to this.
  • the number of stacked layers may be increased to form four or more conductor layers.
  • the back short part 12 of the depth suitable for the frequency characteristic of the high frequency signal to convert can be formed.
  • the conductor layer L2 which is the second conductor layer and the conductor layer L4 which is the third conductor layer so that the depth of the back short portion 12 is 1 ⁇ 4 of the effective wavelength of the high frequency signal.
  • the number of layers can be adjusted to adjust the distance between the conductor layers L1 to L4.
  • the signal without changing the distance between the conductor layers L1 and L2 and keeping the impedance of the transmission line 11 constant, the signal can be strengthened according to the wavelength of the high frequency signal to be converted, and the characteristics can be improved.
  • terminus part 13 of the back short part 12 presupposed that it is formed in the conductor layer L3 which is an inner layer of the board
  • the termination portion 13 may be formed on the surface layer on the surface opposite to the conductor layer L1 on which the transmission line 11 is formed, that is, the conductor layer L3 of FIG.
  • the number of layers of the substrate 10 can be reduced and the thickness of the substrate 10 can be reduced, so that the waveguide converter 1 can be further miniaturized.
  • the present invention is suitable for a waveguide converter that converts a high frequency signal of 300 GHz or more between a transmission line and a waveguide.

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Abstract

L'invention concerne un convertisseur de guide d'ondes comprenant : un substrat (10) ayant au moins trois couches conductrices; un boîtier métallique (20) disposé verticalement sur la couche conductrice (L1) disposée sur la couche de surface du substrat (10), et ayant un trajet de guidage d'ondes (20a) couplé électromagnétiquement à des lignes de transmission (11a), (11b), (11c) qui constituent une partie de la couche conductrice (L1) et transmettent un signal haute fréquence; et une section arrière courte (12) pour terminer le trajet de guidage d'ondes (20a). De plus, le substrat (10) comprend : la couche conductrice (L2) adjacente à la couche conductrice (L1) par l'intermédiaire d'une couche diélectrique (31); et la couche conductrice (L3) ayant une partie de terminaison (13) pour terminer le trajet de guidage d'onde (20a) à l'intérieur de la section courte arrière (12).
PCT/JP2018/021965 2017-06-21 2018-06-08 Convertisseur de guide d'ondes WO2018235626A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-121113 2017-06-21
JP2017121113 2017-06-21

Publications (1)

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WO2018235626A1 true WO2018235626A1 (fr) 2018-12-27

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080266196A1 (en) * 2007-04-27 2008-10-30 Shawn Shi Waveguide to microstrip line coupling apparatus
JP2011109431A (ja) * 2009-11-18 2011-06-02 Mitsubishi Electric Corp 導波管−マイクロストリップ線路変換器および導波管−マイクロストリップ線路変換器の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080266196A1 (en) * 2007-04-27 2008-10-30 Shawn Shi Waveguide to microstrip line coupling apparatus
JP2011109431A (ja) * 2009-11-18 2011-06-02 Mitsubishi Electric Corp 導波管−マイクロストリップ線路変換器および導波管−マイクロストリップ線路変換器の製造方法

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