WO2018233156A1 - 可调电容、阻抗匹配装置和半导体加工设备 - Google Patents

可调电容、阻抗匹配装置和半导体加工设备 Download PDF

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Publication number
WO2018233156A1
WO2018233156A1 PCT/CN2017/106668 CN2017106668W WO2018233156A1 WO 2018233156 A1 WO2018233156 A1 WO 2018233156A1 CN 2017106668 W CN2017106668 W CN 2017106668W WO 2018233156 A1 WO2018233156 A1 WO 2018233156A1
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Prior art keywords
electrode
control electrode
control
ferroelectric
impedance matching
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PCT/CN2017/106668
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English (en)
French (fr)
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韦刚
成晓阳
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北京北方华创微电子装备有限公司
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Priority to SG11201912470QA priority Critical patent/SG11201912470QA/en
Priority to KR1020217033790A priority patent/KR102381337B1/ko
Priority to US16/625,629 priority patent/US11189465B2/en
Priority to JP2019571210A priority patent/JP6928124B2/ja
Priority to KR1020197029804A priority patent/KR20190125446A/ko
Publication of WO2018233156A1 publication Critical patent/WO2018233156A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/01—Details
    • H01G5/011—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/42—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges

Definitions

  • the invention belongs to the technical field of microelectronic processing, and in particular relates to a tunable capacitor, an impedance matching device and a semiconductor processing device.
  • Plasma technology is widely used in the field of manufacturing technology of semiconductor devices.
  • an RF power source is used to load energy into a reaction chamber to excite a process gas in a chamber to form a plasma; the plasma contains a large amount of electrons, ions, excited atoms, molecules, and radicals.
  • the active particles which are subjected to various physical and chemical reactions on the surface of the substrate placed in the cavity and exposed to the plasma environment, cause changes in the surface of the substrate, thereby completing processes such as etching and deposition.
  • the output impedance of the RF power supply is generally 50 ⁇ .
  • an impedance matching device is generally disposed between the RF power source and the reaction chamber.
  • the load impedance is equal to the sum of the impedance of the impedance matching device and the impedance of the reaction chamber.
  • the impedance matching device is serially connected between the RF power source 10 and the reaction chamber 20, and includes an acquisition unit 1, a control unit 2, an execution unit 3, and a matching network 4, wherein the acquisition unit 1 is serially connected to the RF power supply.
  • acquisition unit 1 is used to collect electrical signals (voltage V and current I) on the transmission line on which it is located and send it to control unit 2;
  • matching network 4 includes adjustable capacitances C 1 , C 2 and fixed inductance L;
  • the execution unit 3 includes motors M1 and M2;
  • the control unit 2 obtains the amount of change of the tunable capacitors C 1 , C 2 according to the impedance matching algorithm according to the electrical signal transmitted by the acquisition unit 1, and controls the motors M1 and M2 according to the amount of change rotated, so as to drive the adjustable capacitors C 1, C 2, the mechanical movement adjustment ends, respectively of 1, C the capacitance value of the variable capacitor C 2 are adjusted.
  • the impedance matching device impedance-matches the output impedance and load impedance of the RF power source by adjusting its own impedance.
  • the use of the impedance matching device shown in FIG. 1 inevitably has the following problems in practical applications: the impedance matching device shown in FIG. 1 changes the capacitance value of the capacitor by the rotation of the motor, and the impedance matching speed is affected by the rotational speed of the motor.
  • the limitation is that the matching speed is usually only in the order of seconds, and it is difficult to achieve the matching speed in milliseconds.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a tunable capacitance and impedance matching device, which can adjust the capacitance of the adjustable capacitor in milliseconds or less, thereby achieving Matching speed in milliseconds or less.
  • the present invention provides a tunable capacitor comprising a ferroelectric dielectric layer and first and second electrodes on opposite sides of the ferroelectric dielectric layer; the tunable capacitor further comprising a first control electrode and a second control electrode, wherein the electrode and the second electrode are insulated; the first control electrode and the second control electrode are configured to provide an electric field to the ferroelectric layer to control the electric field The electric field strength adjusts a dielectric constant of the ferroelectric dielectric layer to adjust a capacitance between the first electrode and the second electrode.
  • ferroelectric dielectric layer is simultaneously located in an electric field between the first control electrode and the second control electrode and an electric field between the first electrode and the second electrode.
  • the first electrode and the first control electrode are both disposed on an upper side of the ferroelectric layer, and the first electrode is located on the left side, the first control electrode is located on the right side, and the second An electrode and the second control electrode are both disposed on a lower side of the ferroelectric layer, and the second electrode is located on a right side, and the second control electrode is located on a left side; the first control electrode and the first The orthographic projections of the two control electrodes on the plane of the upper surface of the ferroelectric layer do not overlap.
  • the number of the second control electrodes is two, the second electrode is located between the two second control electrodes; the number of the first electrodes is two, the first control electrode Located between the two first electrodes.
  • the second control electrode is disposed opposite to the first electrode; the first control electrode is disposed opposite to the second electrode.
  • first electrode and the second electrode are respectively disposed on an upper side and a lower side of the ferroelectric dielectric layer; the first control electrode and the second control electrode are respectively disposed on a left side of the ferroelectric dielectric layer And the right side.
  • the material of the ferroelectric layer comprises BaTiO 3 , BaO-TiO 2 , KNbO 3 , K 2 O-Nb 2 O 5 , LiNbO 3 , Li 2 O-Nb 2 O 5 , potassium dihydrogen phosphate, triglycine sulfuric acid At least one of salt and rose salt.
  • the present invention also provides an impedance matching device including an acquisition unit, a matching network, and a control unit, the matching network being serially connected between the radio frequency power source and the reaction chamber, and the matching network
  • the tunable capacitor of any one of the foregoing aspects of the present invention may be included, and the first electrode and the second electrode are connected to a circuit of the matching network, and the first control electrode is electrically connected to the control unit.
  • the second control electrode is grounded;
  • the acquisition unit is configured to collect an electrical signal on a transmission line between the RF power source and the matching network, and send it to the control unit;
  • the control unit is configured to use Performing an impedance matching operation on the electrical signal collected by the collecting unit, and controlling a voltage applied between the first control electrode and the second control electrode according to the operation result to adjust the first electrode and the second electrode The tolerance between the two.
  • the impedance matching device further includes a low pass filter disposed between the control unit and the first control electrode.
  • the number of the adjustable capacitors is plural, the number of the low-pass filters is equal to the number of the adjustable capacitors, and the two are set one-to-one.
  • the present invention further provides a semiconductor processing apparatus including a radio frequency power source, an impedance matching device, and a reaction chamber, wherein the impedance matching device is connected in series between the RF power source and the reaction chamber, wherein
  • the impedance matching device employs the impedance matching device of any of the foregoing aspects of the present invention.
  • the adjustable capacitor provided by the embodiment of the present invention can control the electric field strength of the electric field where the ferroelectric dielectric layer is located by controlling the voltage between the first control electrode and the second control electrode, and the rapid change of the electric field strength can cause the ferroelectric dielectric layer to Rapid change of dielectric constant
  • the rapid change of the dielectric constant can cause a rapid change in the capacitance value between the first electrode and the second electrode. Therefore, the present invention can increase the adjustment rate of the capacitance value compared with the prior art mechanical adjustment method. By shortening the adjustment time, the capacitance value of milliseconds or less can be adjusted.
  • the impedance matching device provided by the embodiment of the present invention can achieve the matching speed of milliseconds by using the adjustable capacitor provided by the embodiment of the present invention.
  • the semiconductor processing apparatus provided by the embodiment of the invention can achieve fast matching between the output impedance of the RF power source and the load impedance by using the impedance matching device provided by the embodiment of the invention, thereby improving the process efficiency and the process effect.
  • FIG. 1 is a schematic block diagram of a semiconductor processing apparatus to which an existing impedance matching device is applied;
  • FIG. 2 is a schematic diagram showing the relationship between the polarization P of the ferroelectric layer and the electric field E;
  • FIG. 3 is a schematic structural diagram of a tunable capacitor in Embodiment 1 of the present invention.
  • FIG. 4 is another schematic structural diagram of a tunable capacitor in Embodiment 1 of the present invention.
  • FIG. 5 is still another schematic structural diagram of a tunable capacitor in Embodiment 1 of the present invention.
  • FIG. 6 is a schematic structural diagram of an impedance matching apparatus according to Embodiment 2 of the present invention.
  • FIG. 7 is a schematic structural diagram of a semiconductor processing apparatus according to Embodiment 3 of the present invention.
  • Embodiments of the present invention provide a tunable capacitor including a ferroelectric dielectric layer and first and second electrodes on opposite sides of the ferroelectric dielectric layer; the tunable capacitor further includes a first electrode and a second electrode a first control electrode and a second control electrode that are insulated; the first control electrode and the second control electrode are used to provide an electric field to the ferroelectric dielectric layer to adjust the dielectric constant of the ferroelectric dielectric layer by controlling the electric field strength of the electric field, thereby adjusting First electrode and The capacitance of the capacitance between the second electrodes.
  • the first electrode and the second electrode are two electrodes of the adjustable capacitor provided by the embodiments of the present invention, and the so-called first control electrode and the second control electrode are used to control the dielectric constant of the adjustable capacitor and thereby adjust The control electrode of the capacitance value.
  • the adjustable capacitor provided in this embodiment can control the electric field strength of the electric field of the ferroelectric dielectric layer and control the voltage between the first control electrode and the second control electrode by controlling the voltage between the first control electrode and the second control electrode.
  • the rapid change of the electric field can cause a rapid change of the electric field strength.
  • the rapid change of the electric field strength can cause a rapid change of the dielectric constant of the ferroelectric dielectric layer. Therefore, the tunable capacitor provided by the embodiment of the present invention changes the ferroelectric medium by changing the electric field in which it is located.
  • the electrical parameters such as the dielectric constant of the layer, thereby adjusting the capacitance of the adjustable capacitor, that is, the adjustable capacitor provided by the embodiment of the invention is adjusted by the electrical parameter adjustment mode, that is, the utilization is utilized.
  • fast, short adjusting time can be several milliseconds or less to complete the adjustment of the value of the capacitor.
  • FIG. 2 is a schematic diagram showing the relationship between the polarization P of the ferroelectric material and the applied electric field E.
  • a macroscopic dipole appears in the direction of the electric field inside the dielectric (ferroelectric material), and a polarized charge appears on the surface of the dielectric.
  • the polarization of the polarized charge P (unit The electric dipole moment vector sum of the dielectric within the volume is related to both the magnitude of the electric field and the direction of the electric field.
  • the polarization rate of the dielectric ⁇ P/E, which is expressed as the slope of each point of the curve in FIG. 2, and the larger the electric field, the smaller the polarization rate of the dielectric.
  • the relationship between the electric induction intensity D, the electric field strength E, and the polarization P is as follows:
  • ⁇ 0 represents the vacuum dielectric constant
  • ⁇ r represents the relative dielectric constant
  • the capacitance value C ⁇ 0 ⁇ r S / d
  • S is the equivalent face-to-face area of the parallel plate capacitor plate
  • d is the spacing between the two electrode plates in parallel.
  • the purpose of changing the capacitance of the tunable capacitor in milliseconds or less can be achieved.
  • At least a portion of the ferroelectric dielectric layer is simultaneously located in an electric field between the first control electrode and the second control electrode and an electric field between the first electrode and the second electrode, such that the portion of the ferroelectric dielectric layer is affected by
  • the dielectric constant changes due to the influence of the electric field change between the first control electrode and the second control electrode, and the portion of the ferroelectric dielectric layer acts as a dielectric layer between the first electrode and the second electrode, according to the capacitance formula
  • the electrical constant changes, and the capacitance between the first electrode and the second electrode also changes accordingly, thereby ensuring effective adjustment by changing the electric field strength supplied to the electric field between the first control electrode and the second control electrode.
  • the magnitude of the capacitance between the first electrode and the second electrode is an adjustment of the magnitude of the capacitance of the adjustable capacitor.
  • the adjustable capacitor includes: a ferroelectric dielectric layer 1, a first electrode 21 and a second electrode 22 on opposite sides of the ferroelectric dielectric layer 1, and a first insulating layer from the first electrode 21 and the second electrode 22.
  • the first electrode 21 and the first control electrode 31 are both disposed on the upper side of the ferroelectric dielectric layer 1, and the first electrode 21 is located on the left side, the first control electrode 31 is located on the right side, and the second electrode 22 and the second control electrode 32 are both Provided on the lower side of the ferroelectric dielectric layer 1, and the second electrode 22 is located on the right side, and the second control electrode 32 is located on the left side; the first control electrode 31 and the second control electrode 32 are on the plane of the upper surface of the ferroelectric dielectric layer 1
  • the orthographic projections do not overlap.
  • the adjustable capacitor when the adjustable capacitor is connected to the impedance matching device, the first electrode 21 and the second electrode 22 are connected to the circuit in the matching network, and the first control electrode 31 and the second control electrode 32 are subjected to the impedance matching device.
  • the voltage between the first electrode 21 and the second electrode 22 is adjusted. Please refer to FIG. 6 for a specific electrical structure.
  • the second control electrode 32 is disposed opposite to the first electrode 21, and the orthogonal projections on the plane of the upper surface of the ferroelectric layer 1 at least partially overlap; the first control The electrode 31 is disposed opposite the second electrode 22, and the orthographic projections of the two on the plane of the upper surface of the ferroelectric layer 1 at least partially overlap.
  • the first electrode 21 and the second electrode 22 and the first control electrode 31 and the second control electrode 32 adopt the above positional relationship, so that the volume of the adjustable capacitor is small and the structure is simple.
  • the oppositely disposed second control electrode 32 and the first electrode 21 completely coincide with the orthographic projection in the plane of the upper surface of the ferroelectric layer 1; the oppositely disposed first control electrode 31 and second electrode 22 are in the ferroelectric medium
  • the orthographic projections in the plane of the upper surface of layer 1 are completely coincident, which makes the components of the tunable capacitor more concentrated, making the tunable capacitor smaller and simpler in structure.
  • the adjustable capacitor can also adopt the structure shown in FIG. 4, which is different from FIG. 3 in that the number of the second control electrodes 32 is two, and the second electrode 22 is located in two second controls. Between the electrodes 32; the number of the first electrodes 21 is two, and the first control electrode 31 is located between the two first electrodes 21.
  • the tunable capacitor shown in FIG. 4 has a portion of the ferroelectric dielectric layer 1 simultaneously at an electric field between the first control electrode 31 and the second control electrode 32 and the first electrode 21 and the second as compared with that shown in FIG. In the electric field between the electrodes 22, and thus with respect to FIG. 3, the variation of the capacitance of the adjustable capacitor can be increased under the same electric field change, thereby further increasing the adjustment rate of the capacitance value of the adjustable capacitor. .
  • the first electrode 21 and the second electrode 22 of the tunable dielectric capacitor in this embodiment are respectively disposed on the upper side and the lower side of the ferroelectric dielectric layer 1; the first control electrode 31 and the first The second control electrodes 32 are respectively disposed on the left and right sides of the ferroelectric dielectric layer 1.
  • the first electrode 21 and the second electrode 22 of the tunable dielectric capacitor may also be disposed on the left and right sides of the ferroelectric layer 1, respectively; the first control electrode 31 and the second control electrode 32 are respectively disposed on the ferroelectric layer 1 Upper and lower sides.
  • the entire ferroelectric dielectric layer 1 can be simultaneously in the electric field between the first control electrode 31 and the second control electrode 32 and the electric field between the first electrode 21 and the second electrode 22, so that In the case of the same electric field change, the change of the capacitance of the adjustable capacitor is further increased, thereby further increasing the adjustment rate of the capacitance value of the adjustable capacitor.
  • the ferroelectric material of the ferroelectric dielectric layer 1 includes, but is not limited to, BaTiO 3 , BaO—TiO 2 , KNbO 3 , K 2 O—Nb 2 O 5 , LiNbO 3 , Li 2 O—Nb 2 O 5 , dihydrogen phosphate. At least one of potassium, triglycine sulfate, and rosaceous salt.
  • the impedance matching device includes a matching network 50, an acquisition unit 51, and a control unit 52.
  • the matching network 50 includes the adjustable capacitor provided in Embodiment 1 above, and the An electrode 21 and a second electrode 22 are connected to the circuit of the matching network 50.
  • the first control electrode 31 is electrically connected to the control unit 52, and the second control electrode 32 is grounded.
  • the matching network 50 is connected in series between the RF power source 10 and the reaction chamber 20; the acquisition unit 51 is used to collect the electrical signal on the transmission line between the RF power source 10 and the matching network 50, and send the electrical signal to the control unit 52; The control unit 52 is configured to perform an impedance matching operation according to the electrical signal collected by the collecting unit 51, and control a voltage applied between the first control electrode 31 and the second control electrode 32 according to the operation result to adjust the first electrode 21 and the first The capacitance between the two electrodes 22.
  • the acquisition unit includes, but is not limited to, a sensor.
  • the type of matching network 50 includes, but is not limited to, an L-type.
  • the form of each unit in the impedance matching device in this embodiment is not unique.
  • the control unit 52 may be a DSP, or may be a single chip microcomputer or the like.
  • the specific algorithm in the case where the control unit 52 performs the impedance matching operation is not limited in this embodiment. As long as the voltage is adjusted according to the calculation result, the output impedance of the RF power source 10 can be made equal to the load impedance.
  • the adjustable capacitor in Embodiment 1 since the magnitude of the capacitance of the capacitor in the matching network is not required to be controlled by the execution unit, but the adjustable capacitor in Embodiment 1 is used, only the control voltage outputted by the control unit 52 needs to be controlled.
  • the size of V1 and V2 can realize the rapid change of the capacitance of the adjustable capacitor, which can achieve fast matching and achieve millisecond or faster matching speed.
  • the acquisition unit 51 in the impedance matching device is located at the front end of the matching network 50, and is used for detecting electrical signals such as voltage V and current I on the transmission line of the RF power supply 10.
  • the control unit 52 uses a certain reference.
  • the amplitude discrimination algorithm obtains the modulus value
  • the matching network 50 uses components with adjustable capacitors C1, C2 and inductor L are composed, wherein the capacitors C1 and C2 are the adjustable capacitors described in the foregoing embodiment 1; the adjustable capacitors C1 and C2 are respectively in the electric field E1 and E2 provided by the control electrodes thereof, wherein E1 and E2 are The electric field strength can be realized by the control unit 52 controlling the control voltages V1 and V2 loaded on the control electrode; the control unit 52 adjusts the control voltages V1 and V2 loaded on the control electrode by the matching control algorithm according to the electrical signal supplied from the acquisition unit 51.
  • the rapid adjustment of the capacitance of the tunable capacitors C1 and C2 is achieved, so that the load impedance of the matching network 50 is equal to the output impedance of the RF power source 10 (usually 50 ⁇ ), so that the two achieve fast conjugate matching.
  • the reflected power of the transmission line of the RF power source 10 is zero or small, and the power generated by the RF power source 10 is all supplied to the reaction chamber 20.
  • the impedance matching device further includes a low pass filter 53; the low pass filter 53 is disposed between the control unit 52 and the first control electrode 31.
  • the embodiment is not specifically limited.
  • the low pass filter 53 includes an inductor and a capacitor. Wherein, one end of the inductor is connected to the output end of the control unit 52, the other end is connected to one end of the capacitor, and the other end of the capacitor is grounded and the control electrode is connected. After adjusting the voltages V1 and V2 of the two control electrodes, the control unit 52 controls the sizes of E1 and E2 through the low-pass filters F1 and F2, respectively, and some signal interference can be filtered out by means of the low-pass filter.
  • the number of the adjustable capacitors is multiple, and the low-pass filter and the adjustable capacitor are set in one-to-one correspondence and the quantity is equal.
  • the adjustable capacitor includes two, respectively C1 and C2, and the low-pass filter also includes two, F1 and F2, respectively, and the adjustable capacitor C1 passes through the low-pass filter F1 and the control unit 52.
  • the tunable capacitor C2 is connected to the control unit 52 via a low pass filter F2.
  • the impedance matching device in this embodiment is not limited to being applied to a plasma system, and can also be applied to other systems such as communication, nuclear magnetic, power transmission lines and the like.
  • the present embodiment provides a semiconductor processing apparatus.
  • the semiconductor processing apparatus includes a radio frequency power source 10, an impedance matching device 60, and a reaction chamber 20, and the impedance matching device 60 is connected in series to the RF power source 10 and the reaction chamber 20.
  • the impedance matching device 60 employs the impedance matching device provided in Embodiment 2 above.
  • the semiconductor processing apparatus in this embodiment uses the impedance matching device provided in Embodiment 2 to achieve fast matching between the output impedance of the RF power source and the load impedance, thereby improving process efficiency and process efficiency.

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Abstract

一种可调电容，包括铁电介质层(1)和位于所述铁电介质层(1)相对两侧的第一电极(21)和第二电极(22)；所述可调电容还包括与第一电极(21)和第二电极(22)绝缘设置的第一控制电极(31)和第二控制电极(32)；所述第一控制电极(31)和所述第二控制电极(32)用于向所述铁电介质层(1)提供电场，以通过控制所述电场的电场强度来调整所述铁电介质层(1)的介电常数，从而调节所述第一电极(21)和第二电极(22)之间的电容值。还提供一种阻抗匹配装置及半导体加工设备。该可调电容、阻抗匹配装置及半导体加工设备能够在毫秒级的时间内甚至更快地调节可调电容的容值大小，从而可以加快匹配速度，缩短匹配时间，提高工艺效率和工艺效果。

Description

可调电容、阻抗匹配装置和半导体加工设备 技术领域
本发明属于微电子加工技术领域，具体涉及一种可调电容、阻抗匹配装置和半导体加工设备。
背景技术
等离子体技术被广泛地应用于半导体器件的制造技术领域中。在等离子体沉积与刻蚀系统中，采用射频电源向反应腔室加载能量以将腔室内的工艺气体激发形成等离子体；等离子体中含有大量的电子、离子、激发态的原子、分子和自由基等活性粒子，这些活性粒子和置于腔体内并曝露在等离子体环境下的基片表面发生各种物理和化学反应，使基片表面发生变化，从而完成刻蚀、沉积等工艺。
在应用中，射频电源的输出阻抗一般为50Ω，为了使反应腔室从射频电源处获得最大的功率以及降低反应腔室的反射功率，一般在射频电源与反应腔室之间设置有阻抗匹配装置，用于使射频电源的输出阻抗和负载阻抗相匹配，负载阻抗等于阻抗匹配装置的阻抗与反应腔室的阻抗之和。
图1为应用现有的阻抗匹配装置的半导体加工设备的原理框图。请参阅图1，阻抗匹配装置串接在射频电源10和反应腔室20之间，其包括采集单元1、控制单元2、执行单元3和匹配网络4，其中，采集单元1串接在射频电源10和匹配网络4之间，采集单元1用于采集其所在传输线上的电信号(电压V和电流I)并发送至控制单元2；匹配网络4包括可调电容C1、C2以及固定电感L；执行单元3包括电机M1和M2；控制单元2根据采集单元1发送的电信号依据阻抗匹配算法来获得可调电容C1、C2的变化量，并根据该变化量控制电机M1和M2转动，从而带动可调电容C1、C2的机械调节端运动，以分别对可调电容C1、C2的电容值进行调节。基于上述可知，阻抗匹配装置通过调节其自身阻抗来对射频电源的输出阻抗和负载阻抗进行 阻抗匹配。
然而，采用如图1所示的阻抗匹配装置在实际应用中不可避免地存在以下问题：图1所示的阻抗匹配装置通过电机转动来改变电容的容值大小，阻抗匹配速度受到电机的转动速度的限制，使得匹配速度通常仅为秒级，而难以实现毫秒级的匹配速度。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种可调电容及阻抗匹配装置，可以实现在毫秒级或更短时间内调节可调电容的容值大小，从而达到毫秒级或更短时间的匹配速度。
为解决上述问题之一，本发明提供了一种可调电容，包括铁电介质层和位于所述铁电介质层相对两侧的第一电极和第二电极；所述可调电容还包括与第一电极和第二电极绝缘设置的第一控制电极和第二控制电极；所述第一控制电极和所述第二控制电极，用于向所述铁电介质层提供电场，以通过控制所述电场的电场强度来调整所述铁电介质层的介电常数，从而调节所述第一电极和第二电极之间的容值。
其中，至少部分所述铁电介质层同时位于所述第一控制电极和所述第二控制电极之间的电场以及所述第一电极和所述第二电极之间的电场中。
其中，所述第一电极和所述第一控制电极均设置于所述铁电介质层的上侧，且所述第一电极位于左侧，所述第一控制电极位于右侧；所述第二电极和所述第二控制电极均设置在所述铁电介质层的下侧，且所述第二电极位于右侧，所述第二控制电极位于左侧；所述第一控制电极与所述第二控制电极在所述铁电介质层的上表面所在平面上的正投影不重叠。
其中，所述第二控制电极的数量为两个，所述第二电极位于所述两个所述第二控制电极之间；所述第一电极的数量为两个，所述第一控制电极位于所述两个所述第一电极之间。
其中，所述第二控制电极与所述第一电极相对设置；所述第一控制电极与所述第二电极相对设置。
其中，相对设置的所述第二控制电极和所述第一电极在所述铁电介质层上的正投影完全重合；相对设置的所述第一控制电极和所述第二电极在所述铁电介质层上的正投影完全重合。
其中，所述第一电极和第二电极分别设置在所述铁电介质层的上侧和下侧；所述第一控制电极和所述第二控制电极分别设置在所述铁电介质层的左侧和右侧。
其中，所述铁电介质层的材料包括BaTiO3、BaO-TiO2、KNbO3、K2O-Nb2O5、LiNbO3、Li2O-Nb2O5、磷酸二氢钾、三甘氨酸硫酸盐和罗息盐中的至少一种。
作为另一个方面，本发明还提供一种阻抗匹配器，包括采集单元、匹配网络和控制单元，所述匹配网络串接在所述射频电源和所述反应腔室之间，且所述匹配网络可以包括本发明前述任一方案所述的可调电容，且所述第一电极和第二电极接入所述匹配网络的电路中，所述第一控制电极与所述控制单元电连接，所述第二控制电极接地；所述采集单元用于采集所述射频电源和所述匹配网络之间的传输线上的电信号，并将其发送至所述控制单元；所述控制单元用于根据所述采集单元采集到的电信号进行阻抗匹配运算，并根据运算结果控制加载在所述第一控制电极和第二控制电极之间的电压，以调节所述第一电极和所述第二电极之间的容值。
该阻抗匹配装置还包括低通滤波器，所述低通滤波器设置在所述控制单元与所述第一控制电极之间。
其中，所述可调电容的数量为多个，所述低通滤波器的数量与所述可调电容的数量相等，且二者一一对应地设置。
作为另一个方面，本发明还提供一种半导体加工设备，包括射频电源、阻抗匹配装置和反应腔室，所述阻抗匹配装置串接在所述射频电源和所述反应腔室之间，其中，所述阻抗匹配装置采用本发明前述任一方案所述的阻抗匹配装置。
本发明具有以下有益效果：
本发明实施例提供的可调电容，由于可以通过控制第一控制电极和第二控制电极之间的电压来控制铁电介质层所在的电场的电场强度，电场强度的快速变化可以引起铁电介质层的介电常数的快速变 化，介电常数的快速变化可以引起第一电极和第二电极之间的电容容值的快速变化，因此，与现有技术的机械调节方式相比，本发明可以提高电容容值的调节速率、缩短调节时间，可以实现毫秒级或更短时间内的电容容值的调节。
本发明实施例提供的阻抗匹配装置，由于采用本发明实施例提供的可调电容，因而阻抗匹配装置能够实现毫秒级的匹配速度。
本发明实施例提供的半导体加工设备，由于采用本发明实施例提供的阻抗匹配装置，可以实现射频电源的输出阻抗和负载阻抗之间的快速匹配，从而提高工艺效率以及工艺效果。
附图说明
图1为应用现有的阻抗匹配装置的半导体加工设备的原理框图；
图2为铁电介质层的极化强度P与所处电场E之间的关系示意图；
图3为本发明实施例1中的可调电容的一种结构示意图；
图4为本发明实施例1中的可调电容的另一种结构示意图；
图5为本发明实施例1中的可调电容的又一种结构示意图；
图6为本发明实施例2提供的阻抗匹配装置的结构示意图；
图7为本发明实施例3提供的半导体加工设备的结构示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的可调电容、阻抗匹配装置和半导体加工设备进行详细描述。
实施例1
本发明实施例提供一种可调电容，该可调电容包括铁电介质层和位于铁电介质层相对两侧的第一电极和第二电极；该可调电容还包括与第一电极和第二电极绝缘设置的第一控制电极和第二控制电极；第一控制电极和第二控制电极用于向铁电介质层提供电场，以通过控制电场的电场强度来调整铁电介质层的介电常数，从而调节第一电极和 第二电极之间的电容的容值大小。也就是说，所谓第一电极和第二电极为本发明实施例提供的可调电容的两个电极，所谓第一控制电极和第二控制电极为用以控制可调电容的介电常数进而调节电容容值的控制电极。
本实施例提供的可调电容，可以通过控制第一控制电极与第二控制电极之间的电压来控制铁电介质层所在电场的电场强度，使第一控制电极与第二控制电极之间的电压的快速变化可导致电场强度的快速变化，电场强度的快速变化可以引起铁电介质层的介电常数的快速变化，因此，本发明实施例提供的可调电容通过改变其所在的电场而改变铁电介质层的介电常数等电气参数，进而实现对可调电容容值的调节，也就是说，本发明实施例提供的可调电容是采用电气参数调节方式实现电容容值的可调，即，利用的是可调电容的铁电介质层自身的物理性质(如，铁电介质层所在的电场变化会导致介电常数变化，进而导致第一电极和第二电极之间的电容的容值发生变化)，与现有技术中通过电机带动电容的机械调节端进行机械运动而实现电容容值调节的方式相比，本发明实施例提供的可调电容的容值调节速度快、调节时间短，可以在毫秒级或更短时间内完成电容容值的调节。
为了便于理解，下面将对本实施例提供的可调电容的电容值调节原理进行解释说明。图2为铁电材料的极化强度P与所加载的电场E之间的关系示意图。铁电介质层的铁电材料在电场的作用下，电介质(铁电材料)内部沿电场的方向会出现宏观偶极子，在电介质表面会出现极化电荷，极化电荷的极化强度P(单位体积内电介质的电偶极矩矢量和)与电场的大小和电场的方向均相关。而电介质的电极化率χ＝P/E，其在图2中表现为曲线各个点的斜率，并且，电场越大，电介质的电极化率χ越小。对于电介质，电感应强度D、电场强度E和极化强度P之间的关系如下公式：
D＝ε0E+P
D＝(ε0+χ)E＝ε0εrE
εr＝1+χ/ε0
式中：ε0表示真空介电常数，εr表示相对介电常数。
对于介质平行板电容器，其电容值C＝ε0εrS/d，S为平行板电容 器电极板的等效正对面积，d为平行的两个电极板之间的间距。
由上述分析可知，对于铁电材料为介质的电容，当电容所处的电场快速变化时，其相对介电常数εr会随之发生快速变化，从而可以实现可调电容的容值大小的快速调节。
综上，通过在毫秒级或更短时间内调整介质可调电容所在电场的电场强度，可以达到在毫秒级或更短时间内改变可调电容的容值大小的目的。
在本实施例中，至少部分铁电介质层同时位于第一控制电极与第二控制电极之间的电场以及第一电极与第二电极之间的电场中，这样，该部分铁电介质层会因受到第一控制电极与第二控制电极之间的电场变化的影响而使介电常数发生变化，该部分铁电介质层作为第一电极和第二电极之间的介质层，根据电容公式，由于其介电常数发生变化，可知该第一电极和第二电极之间的容值也相应发生变化，从而可以确保通过改变提供给第一控制电极与第二控制电极之间的电场的电场强度来有效调整该第一电极与第二电极之间的电容容值大小，即实现可调电容的容值大小的调节。
可选地，如图3所示，其为本实施例中的可调电容的一种结构示意图。在该实施例中，可调电容包括：铁电介质层1、位于铁电介质层1相对两侧的第一电极21和第二电极22，以及与第一电极21和第二电极22绝缘设置的第一控制电极31和第二控制电极32。第一电极21和第一控制电极31均设置于铁电介质层1的上侧，且第一电极21位于左侧，第一控制电极31位于右侧；第二电极22和第二控制电极32均设置在铁电介质层1的下侧，且第二电极22位于右侧，第二控制电极32位于左侧；第一控制电极31与第二控制电极32在铁电介质层1上表面所在平面上的正投影不重叠。本实施例中，该可调电容在接入阻抗匹配装置时，第一电极21和第二电极22连接至在匹配网络的电路中，第一控制电极31、第二控制电极32受阻抗匹配装置中的控制单元的控制，调节第一电极21和第二电极22二者之间的电压，具体电气结构示意图请参考图6。
进一步可选地，第二控制电极32与第一电极21相对设置，二者在铁电介质层1上表面所在平面上的正投影至少部分重叠；第一控制 电极31与第二电极22相对设置，二者在铁电介质层1上表面所在平面上的正投影至少部分重叠。第一电极21和第二电极22以及第一控制电极31和第二控制电极32采用上述位置关系，使得可调电容的体积较小且结构简单。
更进一步优选地，相对设置的第二控制电极32和第一电极21在铁电介质层1上表面所在平面中的正投影完全重合；相对设置的第一控制电极31和第二电极22在铁电介质层1上表面所在平面中的正投影完全重合，这可使得可调电容各组成部分更集中，从而使得可调电容的体积更小且结构更为简单。
在实际应用中，可调电容还可以采用如图4所示的结构，其与图3相比，区别在于：第二控制电极32的数量为两个，第二电极22位于两个第二控制电极32之间；第一电极21的数量为两个，第一控制电极31位于两个第一电极21之间。图4所示的可调电容与图3所示相比，使更多部分的铁电介质层1同时处于第一控制电极31与第二控制电极32之间的电场以及第一电极21与第二电极22之间的电场中，因而相对图3而言，能够在相同的电场变化情况下，使得可调电容的容值的变化增大，从而可以进一步提高可调电容的电容值大小的调节速率。
可选地，如图5所示，该实施例中的可调介质电容的第一电极21和第二电极22分别设置在铁电介质层1的上侧和下侧；第一控制电极31和第二控制电极32分别设置在铁电介质层1的左侧和右侧。当然，可调介质电容的第一电极21和第二电极22也可以分别设置在铁电介质层1的左侧和右侧；第一控制电极31和第二控制电极32分别设置在铁电介质层1的上侧和下侧。图5所示的可调电容，全部的铁电介质层1可同时处于第一控制电极31与第二控制电极32之间的电场以及第一电极21与第二电极22之间的电场中，使得其在相同的电场变化情况下，可调电容的容值的变化更进一步增大，从而更进一步提高可调电容的电容值大小的调节速率。
其中，铁电介质层1的铁电材料包括但不限于为BaTiO3、BaO-TiO2、KNbO3、K2O-Nb2O5、LiNbO3、Li2O-Nb2O5、磷酸二氢钾、三甘氨酸硫酸盐和罗息盐中的至少一种。
实施例2
本实施例提供一种阻抗匹配装置，如图6所示，该阻抗匹配装置包括匹配网络50、采集单元51和控制单元52，匹配网络50中包括上述实施例1提供的可调电容，且第一电极21和第二电极22接入匹配网络50的电路中，第一控制电极31与控制单元52电连接，第二控制电极32接地；其中：
匹配网络50串接在射频电源10和反应腔室20之间；采集单元51用于采集射频电源10和匹配网络50之间的传输线上的电信号，并将该电信号发送至控制单元52；控制单元52用于根据采集单元51采集到的电信号进行阻抗匹配运算，并根据运算结果控制加载至第一控制电极31与第二控制电极32之间的电压，以调节第一电极21和第二电极22之间的容值。
其中，采集单元包括但不限于为传感器。匹配网络50的类型包括但不限于为L型。本实施例中阻抗匹配装置中各单元的形式不唯一，如控制单元52可以为DSP，还可以为单片机等。关于控制单元52进行阻抗匹配运算时的具体算法，本实施例不作具体限定，只要保证按照计算结果调整电压后，能够使射频电源10的输出阻抗与负载阻抗相等即可。
本实施例中的阻抗匹配装置，由于调整匹配网络中的电容的容值大小不需要通过执行单元控制，而是采用实施例1中的可调电容，因而只需要控制控制单元52输出的控制电压V1和V2的大小，即可实现可调电容的容值大小的快速变化，能实现快速匹配，实现毫秒或更快的匹配速度。
为了便于理解，下面结合图6对本实施例中的阻抗匹配装置进行详细的解释说明。
如图6所示，本实施例中，阻抗匹配装置中的采集单元51位于匹配网络50前端，用于检测射频电源10传输线上的电压V、电流I等电信号，控制单元52利用一定的鉴幅鉴相算法，得到从匹配网络50的输入端向输出端看去的负载阻抗的模值|Z|和相位θ，并提供匹配控制算法计算所需的控制量。匹配网络50采用的元器件由可调电容 C1、C2和电感L组成，其中电容C1、C2为前述实施例1所述的可调电容；可调电容C1、C2各自处于其控制电极提供的电场E1和E2环境下，其中E1和E2的电场强度可由控制单元52控制加载在控制电极上的控制电压V1和V2来实现；控制单元52根据采集单元51提供的电信号，通过匹配控制算法，调整加载在控制电极上的控制电压V1和V2，从而实现对可调电容C1和C2的容值大小的快速调整，进而使得匹配网络50的负载阻抗等于射频电源10的输出阻抗(通常为50Ω)，使二者达到快速共轭匹配。此时，射频电源10传输线上的反射功率为零或很小，射频电源10产生的功率全部输送给了反应腔室20。
可选地，如图6所示，阻抗匹配装置还包括低通滤波器53；低通滤波器53设置在控制单元52与第一控制电极31之间。关于低通滤波器53的具体组成结构，本实施例不作具体限制。例如，低通滤波器53包括电感和电容。其中，电感的一端接控制单元52的输出端，另一端接电容的一端，电容的另一端接地和控制电极。控制单元52调整两个控制电极的电压V1和V2后，分别通过低通滤波器F1和F2控制E1和E2的大小，借助低通滤波器可以滤除掉一些信号干扰。
可选地，可调电容的数量为多个，低通滤波器与可调电容一一对应设置且数量相等。例如，如图6所示，可调电容包括两个，分别为C1和C2，低通滤波器也包括两个，分别为F1和F2，可调电容C1通过低通滤波器F1与控制单元52连接，可调电容C2通过低通滤波器F2与控制单元52连接。
需要说明的是，本实施例中的阻抗匹配装置不限于应用于等离子体系统，还可以应用于其它如通信、核磁、输电线等系统。
实施例3
本实施例提供一种半导体加工设备，如图7所示，该半导体加工设备包括射频电源10、阻抗匹配装置60和反应腔室20，阻抗匹配装置60串接在射频电源10和反应腔室20之间，用于对射频电源10的输出阻抗和负载阻抗实现匹配，其中，阻抗匹配装置60采用上述实施例2提供的阻抗匹配装置。
本实施例中的半导体加工设备，采用实施例2提供的阻抗匹配装置，可以实现射频电源的输出阻抗和负载阻抗之间的快速匹配，从而提高工艺效率以及工艺效果。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (12)

  1. 一种可调电容，其特征在于，包括铁电介质层和位于所述铁电介质层相对两侧的第一电极和第二电极；
    所述可调电容还包括与第一电极和第二电极绝缘设置的第一控制电极和第二控制电极；
    所述第一控制电极和所述第二控制电极，用于向所述铁电介质层提供电场，以通过控制所述电场的电场强度来调整所述铁电介质层的介电常数，从而调节所述第一电极和第二电极之间的容值。
  2. 根据权利要求1所述的可调电容，其特征在于，至少部分所述铁电介质层同时位于所述第一控制电极和所述第二控制电极之间的电场以及所述第一电极和所述第二电极之间的电场中。
  3. 根据权利要求2所述的可调电容，其特征在于，所述第一电极和所述第一控制电极均设置于所述铁电介质层的上侧，且所述第一电极位于左侧，所述第一控制电极位于右侧；
    所述第二电极和所述第二控制电极均设置在所述铁电介质层的下侧，且所述第二电极位于右侧，所述第二控制电极位于左侧；
    所述第一控制电极与所述第二控制电极在所述铁电介质层的上表面所在平面上的正投影不重叠。
  4. 根据权利要求3所述的可调电容，其特征在于，所述第二控制电极的数量为两个，所述第二电极位于所述两个所述第二控制电极之间；
    所述第一电极的数量为两个，所述第一控制电极位于所述两个所述第一电极之间。
  5. 根据权利要求3或4所述的可调电容，其特征在于，所述第二控制电极与所述第一电极相对设置；
    所述第一控制电极与所述第二电极相对设置。
  6. 根据权利要求5所述的可调电容，其特征在于，相对设置的所述第二控制电极和所述第一电极在所述铁电介质层上的正投影完全重合；
    相对设置的所述第一控制电极和所述第二电极在所述铁电介质层上的正投影完全重合。
  7. 根据权利要求2所述的可调电容，其特征在于，所述第一电极和第二电极分别设置在所述铁电介质层的上侧和下侧；
    所述第一控制电极和所述第二控制电极分别设置在所述铁电介质层的左侧和右侧。
  8. 根据权利要求1所述的可调电容，其特征在于，所述铁电介质层的材料包括BaTiO3、BaO-TiO2、KNbO3、K2O-Nb2O5、LiNbO3、Li2O-Nb2O5、磷酸二氢钾、三甘氨酸硫酸盐和罗息盐中的至少一种。
  9. 一种阻抗匹配器，包括采集单元、匹配网络和控制单元，所述匹配网络串接在射频电源和反应腔室之间，其特征在于，所述匹配网络包括权利要求1-8中任意一项所述的可调电容，且所述第一电极和第二电极接入所述匹配网络的电路中，所述第一控制电极与所述控制单元电连接，所述第二控制电极接地；
    所述采集单元用于采集所述射频电源和所述匹配网络之间的传输线上的电信号，并将其发送至所述控制单元；
    所述控制单元用于根据所述采集单元采集到的电信号进行阻抗匹配运算，并根据运算结果控制加载在所述第一控制电极和第二控制电极之间的电 压，以调节所述第一电极和所述第二电极之间的容值。
  10. 根据权利要求9所述的阻抗匹配装置，其特征在于，还包括低通滤波器，所述低通滤波器设置在所述控制单元与所述第一控制电极之间。
  11. 根据权利要求10所述的阻抗匹配装置，其特征在于，所述可调电容的数量为多个，所述低通滤波器的数量与所述可调电容的数量相等，且二者一一对应地设置。
  12. 一种半导体加工设备，包括射频电源、阻抗匹配装置和反应腔室，所述阻抗匹配装置串接在所述射频电源和所述反应腔室之间，其特征在于，所述阻抗匹配装置采用权利要求9-10中任意一项所述的阻抗匹配装置。
PCT/CN2017/106668 2017-06-23 2017-10-18 可调电容、阻抗匹配装置和半导体加工设备 WO2018233156A1 (zh)

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