WO2018196838A1 - 硅片处理装置及方法 - Google Patents

硅片处理装置及方法 Download PDF

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Publication number
WO2018196838A1
WO2018196838A1 PCT/CN2018/084774 CN2018084774W WO2018196838A1 WO 2018196838 A1 WO2018196838 A1 WO 2018196838A1 CN 2018084774 W CN2018084774 W CN 2018084774W WO 2018196838 A1 WO2018196838 A1 WO 2018196838A1
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WO
WIPO (PCT)
Prior art keywords
silicon wafer
unit
assembly
rotating
edge exposure
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Application number
PCT/CN2018/084774
Other languages
English (en)
French (fr)
Inventor
王刚
施益超
姜杰
黄栋梁
宋海军
Original Assignee
上海微电子装备（集团）股份有限公司
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Application filed by 上海微电子装备（集团）股份有限公司 filed Critical 上海微电子装备（集团）股份有限公司
Priority to SG11201910026U priority Critical patent/SG11201910026UA/en
Priority to US16/608,968 priority patent/US10782615B2/en
Priority to JP2019557807A priority patent/JP6807468B2/ja
Priority to KR1020197035051A priority patent/KR102319344B1/ko
Publication of WO2018196838A1 publication Critical patent/WO2018196838A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention relates to a silicon wafer processing apparatus and method in microelectronics, and more particularly to a silicon wafer pre-alignment and edge exposure apparatus and method.
  • microelectronics technology has promoted the upgrading of computer technology, communication technology and other electronic information technology. It plays an important role in the information industry revolution.
  • the lithography machine is an indispensable tool in the manufacturing of microelectronic devices. .
  • the silicon pre-alignment system and the wafer edge exposure system are important components of the advanced package lithography machine.
  • the industry's pre-alignment and edge exposure capabilities are integrated into a single device.
  • the general layout of the pre-alignment and edge-exposure integrated devices used in the industry is as follows: the pre-alignment machine and the edge exposure lens are respectively fixed on the base, and the horizontal movement module drives the rotary lifting module to move horizontally, and the rotary lifting module Adsorb the silicon wafer.
  • the device due to the horizontal movement of the silicon wafer, the device needs to avoid the horizontal movement path of the silicon wafer, and the device needs a large space.
  • the pre-alignment device and the edge exposure device are fixed by silicon, and the pre-alignment machine and the edge exposure lens switch motion.
  • the size of the device is basically equal to the size of a piece of silicon, which takes up less space.
  • the device space is not minimized, and because of the large number of motion modules, the equipment cost is high.
  • An object of the present invention is to provide a silicon wafer processing apparatus and method, and more particularly to provide a silicon wafer pre-alignment and edge exposure apparatus and method for improving the space occupied by the pre-alignment and edge exposure integrated devices used in the prior art. Large, high cost disadvantages, saving space and time and improving work efficiency.
  • an aspect of the present invention provides a silicon wafer processing apparatus for pre-aligning and edge-exposure processing a silicon wafer, the wafer processing apparatus comprising: a substrate, a control component, and pre-aligned light.
  • a machine assembly an edge exposure assembly, a die unit and a synchronous two-way motion module
  • the synchronous two-way motion module is fixed on the bottom plate
  • the pre-alignment light assembly and the edge exposure assembly are respectively fixed in the synchronous two-way a motion module
  • the pre-aligner assembly and the edge exposure assembly are symmetrically distributed with respect to a center of the sheet unit, the control assembly and the pre-alignment assembly, the edge exposure assembly, and the synchronous bidirectional motion module
  • the control component controls the synchronous bidirectional motion module to drive the pre-aligned optical component and the edge exposure component relative to the size of the silicon wafer and the workstation position exposure of the silicon wafer edge
  • the silicon wafers are moved in opposite or opposite directions and the wafer unit is controlled to move the wafer.
  • the film unit includes a rotary table, a positioning table, and a motion module
  • the motion module includes a rotation unit, a lifting unit, and a position compensation unit
  • the rotating table is fixed at the On the rotating unit, the rotating table can carry the silicon wafer to rotate under the driving of the rotating unit, the rotating unit is fixed on the lifting unit, and the lifting unit can drive the rotating unit to vertically
  • the bottom plate moves
  • the positioning table is disposed at a periphery of the rotating table, and is fixed on the position compensation unit, and the positioning table can carry the silicon wafer under the driving of the position compensation unit with respect to the rotation
  • the table moves in the horizontal direction.
  • the synchronous bidirectional motion module includes a linear guide assembly, a driver, left and right spin screws, a left slider, and a right slider, and the left and right spin screws pass through the left slide a block and a right slider connected to the driver, the left slider and the right slider being slidably disposed on the linear guide assembly, the pre-aligner assembly being fixed on the left slider,
  • the edge exposure assembly is fixed on the right slider, and the left and right rotating screws are symmetrically disposed with a left-handed external thread and a right-handed external thread, and the left slider is internally provided with a left-handed internal thread matched with the left-handed external thread.
  • the right slider is internally provided with a right-handed internal thread matched with the right-handed external thread, and the driver drives the left and right rotating screw to rotate, and drives the left and right sliders along the straight line
  • the guiding components are synchronized in opposite or opposite directions.
  • the linear guide assembly includes a first rail and a second rail disposed in parallel, and the left slider and the right slider are both bridged to the first rail and the second rail on.
  • the synchronous bidirectional motion module includes a linear guide assembly, a driver, a rotating gear, a first rack and a second rack, and the first rack is parallel to the second rack Distributed on both sides of the rotating gear and meshed with the rotating gear, the rotating gear is coupled to the driver, the first rack and the second rack have opposite teeth, the pre-pair a collimator assembly is fixed on the first rack, the edge exposure assembly is fixed on the second rack, and the driver drives the rotating gear to rotate to drive the first rack and the second tooth
  • the strips move in opposite or opposite directions along the linear guide assembly.
  • the linear guide assembly includes first and second guide rails disposed in parallel, the first rack is slidably disposed on the first rail, and the second rack The sliding is disposed on the second rail.
  • the pre-aligned light machine assembly includes: a point light source, a pre-alignment lens, and an image acquisition component; the point light source emits illumination light to illuminate an edge of the silicon wafer, Irradiation light from the edge of the silicon wafer reaches the pre-aligned lens to acquire information of the silicon wafer by the image acquisition component.
  • the edge exposure assembly includes: an exposure lens and an aperture switching component; the exposure lens is used for edge exposure of the silicon wafer, and the aperture switching component is used for adjustment The size of the exposure spot.
  • Still another aspect of the present invention provides a method for pre-aligning and edge-exposing a silicon wafer using any of the above-described silicon wafer processing apparatuses, comprising:
  • Step 1 The silicon wafer is placed on the film unit, and the control component controls the synchronous bidirectional motion module to drive the pre-aligner assembly and the edge exposure component to be opposite or opposite to each other with respect to the silicon wafer according to the size of the silicon wafer. Movement to move the pre-aligner assembly to a wafer pre-alignment station;
  • Step 2 The control component controls the die unit and the pre-aligner assembly to pre-align the silicon wafer;
  • Step 3 The control component controls the synchronous bidirectional motion module to drive the pre-aligner assembly and the edge exposure component to move in opposite or opposite directions with respect to the silicon wafer according to the size of the silicon wafer and the requirement of the wafer edge exposure station. Moving the edge exposure assembly to the wafer edge exposure station;
  • Step 4 The control component controls the die unit and the edge exposure component to perform edge exposure processing on the silicon wafer.
  • the film unit comprises a rotating table, a positioning table and a motion module
  • the motion module comprises a rotating unit, a lifting unit and a position compensation
  • the step 2 specifically includes the following steps:
  • Step 21 The rotating table adsorbs the silicon wafer, the rotating unit drives the rotating table and the silicon wafer to rotate, the pre-aligning light machine assembly collects silicon wafer edge information, and the control component is according to the silicon wafer
  • the edge information calculates the eccentricity of the center of the silicon wafer relative to the center of the rotating table, and determines whether the eccentricity amount satisfies the centering accuracy of the silicon wafer and the rotating table, if yes, step 26 is performed; otherwise, step 22 is performed;
  • Step 22 the rotating table drives the silicon wafer to rotate, and rotates the direction in which the maximum value of the eccentricity is located to the moving direction of the position compensation unit;
  • Step 23 the lifting unit drives the rotating table and the silicon piece to move downward to reach a position of intersection with the positioning table, the rotating table releases a silicon wafer, the positioning table absorbs a silicon wafer, and the lifting unit continues Decreasing, driving the rotary table to move to a low position;
  • Step 24 The control component controls the position compensation unit to move the positioning table in a horizontal direction according to an eccentric amount of the center of the silicon wafer relative to the center of the rotating table, so that the center of the silicon wafer coincides with the center of the rotating table. ;
  • Step 25 the lifting unit drives the rotating table to move up to the transfer position, the positioning table releases the silicon wafer, the rotating table absorbs the silicon wafer, and returns to step 21;
  • Step 26 the rotating unit drives the rotating table and the silicon wafer to rotate, the pre-aligning light machine assembly collects silicon wafer edge information, and the control component calculates a notch position of the silicon wafer according to the silicon wafer edge information. And controlling the rotation of the rotating unit according to the notch position of the silicon wafer to realize the orientation of the silicon wafer;
  • Step 27 Determine whether the orientation accuracy of the silicon wafer is satisfied, otherwise step 26 is performed.
  • the silicon wafer processing apparatus and method provided by the present invention provide the pre-aligned optical component and the edge exposure component on the synchronous bidirectional motion module, thereby reducing the occupied space of the device and saving installation cost;
  • the synchronous bidirectional motion module, the rotating unit and the position compensation unit on the component control bottom plate reduce the operation complexity;
  • the synchronous bidirectional motion module is controlled to drive the pre-aligned optical component and the edge exposure component to simultaneously move to different sizes.
  • the pre-alignment and edge exposure operation of the silicon wafer saves switching time and improves work efficiency.
  • FIG. 1 is a front elevational view showing the structure of a silicon wafer processing apparatus according to an embodiment of the present invention
  • Figure 2 is a left side view of Figure 1;
  • FIG. 3 is a workflow diagram of pre-aligning and edge-exposing a silicon wafer using a silicon wafer processing apparatus according to an embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of a synchronous bidirectional motion module according to still another embodiment of the present invention.
  • 1- bottom plate 2-control component; 3-pre-aligned light machine component; 31-pre-aligned lens; 32-point light source; 4- synchronous two-way motion module; 41-left slider; 42-right slide Block; 43-left and right spin screw; 431-first track; 432-second track; 5-edge exposure assembly; 51-exposure lens; 52-stop switching member; 6-lift unit; 7-rotating unit; - rotary table; 8-position compensation unit; 81-positioning table; 9-silicon wafer.
  • FIG. 1 is a front view showing the structure of a silicon wafer processing apparatus according to an embodiment of the present invention
  • FIG. 2 is a left side view of FIG.
  • the present invention provides a silicon wafer processing apparatus for pre-aligning and edge-exposure processing of a silicon wafer 9, comprising: a substrate 1, a control assembly 2, a pre-aligned optical assembly 3, an edge exposure assembly 5, and a carrier
  • the unit and the synchronous bidirectional motion module 4 include a rotating table 71, a positioning table 81 and a motion module.
  • the motion module includes a rotating unit 7, a lifting unit 6, and a position compensation unit 8.
  • the working principle of the pre-aligned optical unit 3 and the edge-exposed assembly 5 has been extensively developed in the prior art. Therefore, the embodiments of the present invention will not be described herein.
  • the control component 2 first controls the synchronous bidirectional motion module 4 to drive the pre-aligned optical component 3 and the edge exposure component 5 to move in opposite or opposite directions with respect to the silicon wafer 9 according to the size of the silicon wafer 9 (here, The control unit 2 controls the synchronous bidirectional motion module 4 to drive the pre-aligned light machine assembly 3 and the edge exposure assembly 5 to move back relative to the silicon wafer 9 to move the pre-aligned light machine assembly 3 to the wafer 9 a quasi-station; then, the control component 2 collects information generated by the pre-alignment optome assembly 3, for example, may be positional information of the edge of the wafer acquired by the pre-alignment optome assembly 3, so that the silicon wafer 9 can be obtained
  • the relative position on the sheet unit in turn, can control the lifting unit 6, the rotating unit 7 and the position compensating unit 8 to pre-align the silicon wafer 9, that is, adjust the silicon sheet 9 on the sheet unit
  • the relative position is such that the relative position of the silicon wafer 9 on the carrier unit
  • the light assembly 5 moves in opposite or opposite directions with respect to the silicon wafer 9, moving the edge exposure assembly 5 to the edge exposure station of the silicon wafer 9; finally, controlling the elevation unit 6, the rotation unit 7, the position compensation unit 8, and the edge exposure assembly
  • the edge exposure processing is performed on the silicon wafer 9, so that the exposure to the predetermined position of the edge of the silicon wafer 9 can be achieved.
  • the synchronous bidirectional motion module 4 is fixed on the bottom plate 1, and the pre-aligning optical unit 3 and the edge exposure unit 5 are respectively fixed on the synchronous bidirectional motion module 4, and the pre-aligning optical assembly 3 and the axis of the edge exposure assembly 5 are symmetrically distributed with respect to the center of the rotary table 71.
  • the control unit 2 is electrically coupled to each of the pre-alignment unit 3, the edge exposure unit 5 and the synchronous bi-directional motion module 4.
  • the control unit 2 controls the synchronization according to the size of the silicon chip 9 and the demand of the wafer edge exposure station.
  • the bidirectional motion module 4 drives the pre-aligner assembly 3 and the edge exposure assembly 5 to move in opposite or opposite directions relative to the silicon wafer 9.
  • the pre-aligner assembly 3 includes: a point source 32, a pre-alignment lens 31, and an image acquisition component, wherein the point source emits illumination light to illuminate an edge of the silicon wafer, passing the edge of the silicon wafer The illumination light reaches the pre-aligned lens to acquire information of the silicon wafer by the image acquisition component;
  • the edge exposure component 5 includes: an exposure lens 51 and a pupil switching component 52, wherein the exposure lens is used for The silicon wafer is subjected to edge exposure, and the pupil switching member is for adjusting the size of the exposure spot.
  • the synchronous bidirectional motion module 4 includes a linear guide assembly, a driver, left and right spin screws 43, a left slider 41, and a right slider 42.
  • the left and right spin screws 43 pass through the left slider.
  • 41 and a right slider 42 coupled to the driver the linear guide assembly includes a first rail 431 and a second rail 432 disposed in parallel, and the left slider 41 and the right slider 42 are both bridged to the first rail 431 and the second rail 432.
  • the pre-aligner assembly 3 is fixed to the left slider 41, and the edge exposure assembly 5 is fixed to the right slider 42.
  • the left and right rotating screws 43 are symmetrically disposed with a left-handed external thread and a right-handed external thread
  • the left sliding block 41 is internally provided with a left-handed internal thread that matches the left-handed external thread
  • the right sliding block 42 is internally provided with a right-handed external thread. Matching right-hand internal thread.
  • the synchronous bidirectional motion module 4 drives the pre-alignment optical unit 3 and the edge exposure assembly 5 to move at the same time, the operation is simple, the switching time is saved, the structure is simple, and the occupation space and cost of the entire device are reduced.
  • the film unit includes a rotary table 71, a positioning table 81 and a motion module.
  • the motion module includes a rotation unit 7, a lifting unit 6, and a position compensation unit 8.
  • the lifting unit 6 and the position compensating unit 8 are both connected to the bottom plate 1.
  • the position compensating unit 8 can be directly connected to the bottom plate 1, or can be connected to the bottom plate 1 indirectly through other components; the rotating unit 7 is arranged to be raised and lowered.
  • the rotary table 71 is fixed on the rotary unit 7 for carrying the silicon wafer 9; the lifting unit 6 drives the rotary unit 7 to move in a direction perpendicular to the bottom plate 1; the positioning table 81 is disposed on the periphery of the rotary table 71, and is fixed at On the position compensating unit 8, the loadable silicon wafer 9 is moved in the horizontal direction by the position compensating unit 8 to adjust the horizontal position of the silicon wafer 9 with respect to the rotating table 71, thereby completing the pre-alignment.
  • the image acquisition component in the pre-aligner assembly 3 collects information of the silicon wafer 9, and the control component 2 controls the elevation unit 6, the rotation unit 7, and the position compensation unit 8 on the silicon wafer according to the information of the collected silicon wafer 9. 9 is adjusted with respect to the offset of the rotary table 71 to complete the pre-alignment operation of the silicon wafer 9.
  • the rotary table 71 adsorbs the silicon wafer 9
  • the rotary unit 7 drives the rotary table 71 and the silicon wafer 9 to rotate
  • the pre-aligned optical assembly 3 collects the silicon wafer edge information
  • the control component 2 calculates the silicon according to the edge information of the silicon wafer 9.
  • the center of the sheet 9 is opposed to the center of the turntable 71, and it is judged whether or not the amount of eccentricity satisfies the centering accuracy of the silicon wafer 9 and the turntable 71.
  • the rotating table 71 drives the silicon wafer 9 to rotate, and rotates the direction in which the eccentric amount is maximum to the moving direction of the position compensating unit 8, that is, a certain level direction.
  • the lifting unit 6 drives the rotating table 71 and the silicon wafer 9 to move in a direction perpendicular to the bottom plate 1 to reach the intersection with the positioning table 81.
  • the rotating table 71 releases the silicon wafer 9, the positioning table 81 adsorbs the silicon wafer 9, and the lifting unit 6 continues to descend.
  • the rotary table 71 is moved to the transfer low position (ie, the position lower than the transfer position); the control unit 2 controls the position compensation unit 8 to move the positioning table 82 in the horizontal direction according to the eccentric amount of the center of the silicon wafer 9 relative to the center of the rotary table 71.
  • the center of the silicon wafer 9 is coincident with the center of the rotary table 71; the lifting unit 6 drives the rotary table 71 to move upward to the transfer position, the positioning table 82 releases the silicon wafer 9, and the rotary table 71 adsorbs the silicon wafer 9 to complete the pre-alignment operation.
  • the rotating unit 7 drives the rotating table 71 and the silicon wafer 9 to rotate, the pre-aligning light machine assembly 3 collects the edge information of the silicon wafer 9, and the control component 2 calculates the notch position according to the edge information of the silicon wafer 9, The rotation of the rotary unit 7 is controlled in accordance with the position of the notch to achieve the orientation of the silicon wafer 9.
  • the control unit 2 controls the synchronous bidirectional motion module 4 to drive the pre-alignment unit 3 and the edge exposure unit 5 along the first track 431 and the second track 432 according to the size of the silicon wafer 9 and the requirement of the edge exposure station of the silicon wafer 9.
  • the wafers 9 are moved in opposite or opposite directions to align the edge exposure assembly 5 to the edge exposure station of the silicon wafer 9.
  • the control unit 2 controls the edge exposure unit 5 on the synchronous bidirectional motion module 4 to perform edge exposure processing according to the requirements of the edge exposure.
  • edge exposure, ring exposure, and segmentation exposure of the silicon wafer 9 can be realized, and the size of the exposure spot can be adjusted; specifically, edge exposure, ring exposure, and the exposure of the silicon wafer 9 are performed by the exposure lens 51. Segment exposure; by the pupil switching component 52, the size of the exposure spot is switched.
  • the silicon wafer processing apparatus can perform pre-alignment and edge exposure processing on the silicon wafers 9 of different sizes, and the size of the silicon wafer 9 includes, but is not limited to, 6 inches, 8 inches, and 12 inches.
  • FIG. 3 is a workflow of pre-aligning and edge-exposing a silicon wafer using a silicon wafer processing apparatus according to an embodiment of the present invention.
  • the steps of pre-aligning and edge-exposure processing the silicon wafers 9 of different sizes using the above-described silicon wafer processing apparatus are as follows.
  • Step S1 The control component 2 controls the synchronous bidirectional motion module 4 to drive the pre-aligned light machine component 3 and the edge exposure component 5 to move in opposite or opposite directions with respect to the silicon wafer 9 according to the size of the silicon wafer 9, so that the pre-alignment optical machine Component 3 moves to the wafer pre-alignment station;
  • Step S2 The control component 2 collects information generated by the pre-aligned light machine assembly 3, and controls the lifting unit 6, the rotating unit 7, and the position compensation unit 8 to pre-align the silicon wafer 9;
  • Step S3 The control component 2 controls the synchronous bidirectional motion module 4 to drive the pre-aligned optical component 3 and the edge exposure component 5 to be opposite to each other with respect to the silicon wafer 9 according to the size of the silicon wafer 9 and the requirement of the edge exposure station of the silicon wafer 9. Moving back, moving the edge exposure assembly 5 to the wafer edge exposure station;
  • Step S4 The control unit 2 controls the elevation unit 6, the rotation unit 7, the position compensation unit 8, and the edge exposure unit 5 to perform edge exposure processing on the silicon wafer 9.
  • the pre-aligner assembly 3 and the edge exposure assembly 5 are substantially 6 inches apart; if the size of the silicon wafer 9 is 8 inches When the edge exposure processing is performed, the pre-aligned light machine assembly 3 is substantially 8 inches apart from the edge exposure unit 5.
  • Step S5 After the exposure processing is completed, if the size of the replaced silicon wafer 9 changes, steps S1 - S4 are repeated; specifically, for example, when the size of the silicon wafer 9 is changed from 6 inches to 8 inches, the left slider 41 And the right slider 42 is respectively synchronously moved back and forth along the first track 431 and the second track 432 by at least 25 mm, so that the pre-aligned light machine assembly 3 and the edge exposure component 5 are separated by more than 8 inches, thereby passing the left slider.
  • the movement of the 41 and right sliders 42 effects pre-alignment and exposure by driving the pre-aligned illuminator assembly 3 and the edge exposure assembly 5 to move in opposite or opposite directions relative to the wafer 9 and to control the movement of the splicing unit.
  • step S2 includes:
  • the rotating table 71 adsorbs the silicon wafer 9, the rotating unit 7 drives the rotating table 71 and the silicon wafer 9 to rotate, the pre-aligning optical unit 3 collects the silicon wafer edge information, and the control unit 2 calculates the center of the silicon wafer 9 based on the edge information of the silicon wafer 9. With respect to the amount of eccentricity at the center of the rotary table 71, it is judged whether or not the amount of eccentricity satisfies the centering accuracy of the silicon wafer 9 and the rotary table 71.
  • the rotating table 71 drives the silicon wafer 9 to rotate, and rotates the direction in which the eccentric amount is maximum to the moving direction of the position compensating unit 8, that is, a certain level direction.
  • the lifting unit 6 drives the rotating table 71 and the silicon wafer 9 to move in the vertical direction to reach the intersection with the positioning table 81.
  • the rotating table 71 releases the silicon wafer 9.
  • the positioning table 81 adsorbs the silicon wafer 9, and the lifting unit 6 continues to descend, and the rotating table is driven.
  • the control unit 2 controls the position compensation unit 8 to move the positioning stage 82 in the horizontal direction according to the eccentric amount of the center of the silicon wafer 9 relative to the center of the rotary table 71, so that the center of the silicon wafer 9 coincides with the center of the rotary table 71.
  • the lifting unit 6 drives the rotating table 72 to move up to the intersection position, the positioning table 82 releases the silicon wafer 9, and the rotating table 72 adsorbs the silicon wafer 9 to complete the pre-alignment operation.
  • FIG. 4 is a schematic structural diagram of a synchronous bidirectional motion module according to still another embodiment of the present invention.
  • the synchronous bidirectional motion module 4 includes a linear guide assembly, a driver, a rotating gear, a first rack, and a second rack.
  • the first rack and the second rack are distributed in parallel on both sides of the rotating gear, and a rotating gear meshes; a rotating gear is coupled to the driver, the teeth of the first rack and the second rack are opposite in direction, the pre-aligner assembly 3 is fixed on the first rack, and the edge exposure assembly 5 is fixed On the second rack, the driver drives the rotating gear to rotate, and drives the first rack and the second rack to move in opposite directions or opposite directions along the first rail 431 and the second rail 432 respectively to adjust the pre-aligning optical unit 3
  • the station of the pre-aligned light machine assembly 3 and the edge exposure assembly 5 needs to be newly adjusted, specifically, when the size of the silicon wafer 9 is When changing from 6 inches to 8 inches, the rotating gear rotates counterclockwise, and at least the circumference is 25 mm, and the first rack and the second rack move at least 25 mm each, respectively, so that the pre-aligning machine assembly 3 can be
  • the edge exposure assembly 5 is more than 8 inches apart, and then the station adjustment is completed; when the size of the silicon wafer 9 needs to be changed from 8 inches to 6 inches, the rotating gear rotates clockwise, and the rotation circumference can be 25 mm, then the first rack And the second racks are respectively moved by 25 mm, so that the pre-aligning machine assembly 3 and the edge exposure unit 5 are separated by 6 inches.
  • the present invention does not impose any limitation on the materials and sizes of the gears and racks in this embodiment.
  • the silicon wafer processing apparatus and method provided by the present invention provide the pre-aligned optical component and the edge exposure component on the synchronous bidirectional motion module, thereby reducing the occupied space of the device and saving installation cost;
  • the synchronous bidirectional motion module, the rotating unit and the position compensation unit on the component control bottom plate reduce the operation complexity;
  • the synchronous bidirectional motion module is controlled to drive the pre-aligned optical component and the edge exposure component to simultaneously move to different sizes.
  • the pre-alignment and edge exposure operation of the silicon wafer saves switching time and improves work efficiency.

Abstract

一种硅片处理装置，将预对准光机组件（3）及边缘曝光组件（5）设于同步双向运动模组（4）上，降低了装置的占用空间，节约了安装成本；进一步，通过控制组件（2）控制底板（1）上的同步双向运动模组、旋转单元（7）以及位置补偿单元（8），降低了操作复杂度；进一步，通过控制同步双向运动模组以驱动预对准光机组件及边缘曝光组件同时运动，可对不同尺寸的硅片（9）进行预对准及边缘曝光操作，节省了切换时间，提高了工作效率。还公开了一种使用硅片处理装置进行硅片处理的方法。

Description

硅片处理装置及方法 技术领域
本发明涉及微电子技术中的一种硅片处理装置及方法，尤其涉及一种硅片预对准和边缘曝光装置及方法。
背景技术
微电子技术的发展促进了计算机技术、通信技术和其它电子信息技术的更新换代，在信息产业革命中起着重要的先导和基础作用，光刻机是微电子器件制造业中不可或缺的工具。而硅片预对准系统和硅片边缘曝光系统是先进封装光刻机的重要组成子系统。
目前市场上对预对准和边缘曝光的自动化程度要求越来越高，但是成本要求越来越低。为了降低成本，行业内将硅片预对准和边缘曝光功能集成在一套装置中。目前行业内使用的预对准和边缘曝光一体化设备的一般布局如下：预对准光机和边缘曝光镜头分别固定在底座上，水平移动模组带动旋转升降模组水平移动，旋转升降模组吸附硅片。以上设备中，由于硅片的水平运动，设备需要避让硅片水平运动路径，设备需要空间较大。行业内有独立的预对准装置和独立的边缘曝光装置，预对准装置和边缘曝光装置中采用硅片固定不动，预对准光机和边缘曝光镜头切换运动的方式。相对来讲，设备的空间大小基本等同于一张硅片的大小，该方式占用空间较少。但是由于存在两个独立的装置，装置空间没有达到最小化，而且由于运动模组较多，设备成本较高。
发明内容
本发明的目的在于提供一种硅片处理装置及方法，尤其提供一种硅片预对准和边缘曝光装置及方法，以改善现有技术中使用的预对准和边缘曝光一体化设备占用空间大，成本较高的缺点，从而节省空间及时间，提高工作效率。
为了达到上述目的，本发明一方面提供了一种硅片处理装置，用于对一 硅片进行预对准和边缘曝光处理，所述硅片处理装置包括：底板、控制组件、预对准光机组件、边缘曝光组件、承片单元及同步双向运动模组，所述同步双向运动模组固定在所述底板上，所述预对准光机组件和边缘曝光组件分别固定在所述同步双向运动模组上，且所述预对准光机组件和边缘曝光组件相对所述承片单元的中心对称分布，所述控制组件与预对准光机组件、边缘曝光组件和同步双向运动模组中的每一个电联接，所述控制组件根据所述硅片的尺寸和硅片边缘曝光的工位需求控制所述同步双向运动模组驱动所述预对准光机组件和边缘曝光组件相对于所述硅片同步相向或相背运动以及控制所述承片单元以使所述硅片运动。
优选地，在上述硅片处理装置中，所述承片单元包括旋转台、定位台及运动模组，所述运动模组包括旋转单元、升降单元和位置补偿单元，所述旋转台固定在所述旋转单元上，所述旋转台可承载所述硅片在所述旋转单元驱动下旋转，所述旋转单元固定在所述升降单元上，所述升降单元能够带动所述旋转单元垂向于所述底板运动，所述定位台设在所述旋转台外围，并固定在所述位置补偿单元上，所述定位台可承载所述硅片在所述位置补偿单元的驱动下相对于所述旋转台沿水平方向运动。
优选地，在上述硅片处理装置中，所述同步双向运动模组包括直线导向组件、驱动器、左右旋丝杠、左滑块以及右滑块，所述左右旋丝杠穿过所述左滑块和右滑块并与所述驱动器连接，所述左滑块和右滑块滑动设置在所述直线导向组件上，所述预对准光机组件固定在所述左滑块上，所述边缘曝光组件固定在所述右滑块上，所述左右旋丝杠上对称设置有左旋外螺纹和右旋外螺纹，所述左滑块内部设置有与所述左旋外螺纹匹配的左旋内螺纹，所述右滑块内部设置有与所述右旋外螺纹匹配的右旋内螺纹，所述驱动器驱动所述左右旋丝杠旋转，带动所述左滑块与右滑块沿着所述直线导向组件同步相向或相背运动。
优选地，在上述硅片处理装置中，所述直线导向组件包括平行设置的第一轨道及第二轨道，所述左滑块和右滑块均跨接在所述第一轨道和第二轨道上。
优选地，在上述硅片处理装置中，所述同步双向运动模组包括直线导向 组件、驱动器、旋转齿轮、第一齿条以及第二齿条，所述第一齿条与第二齿条平行分布在所述旋转齿轮两侧，并与所述旋转齿轮啮合，所述旋转齿轮与所述驱动器连接，所述第一齿条和所述第二齿条的齿口方向相反，所述预对准光机组件固定在所述第一齿条上，所述边缘曝光组件固定在所述第二齿条上，所述驱动器驱动所述旋转齿轮旋转，带动所述第一齿条与第二齿条沿着所述直线导向组件同步相向或相背运动。
优选地，在上述硅片处理装置中，所述直线导向组件包括平行设置的第一导轨和第二导轨，所述第一齿条滑动设置在所述第一导轨上，所述第二齿条滑动设置在所述第二导轨上。
优选地，在上述硅片处理装置中，所述预对准光机组件包括：点光源、预对准镜头及图像采集部件；所述点光源发出照射光线照射所述硅片的边缘，经过所述硅片的边缘的照射光线到达所述预对准镜头以由所述图像采集部件采集所述硅片的信息。
优选地，在上述硅片处理装置中，所述边缘曝光组件包括：曝光镜头及光阑切换部件；所述曝光镜头用于对所述硅片进行边缘曝光，所述光阑切换部件用于调节曝光光斑的大小。
为了达到上述目的，本发明又一方面提供了一种使用上述任一硅片处理装置对硅片进行预对准和边缘曝光处理的方法，包括：
步骤1、将硅片放置在承片单元上，控制组件根据所述硅片的尺寸控制同步双向运动模组驱动预对准光机组件和边缘曝光组件相对于所述硅片同步相向或相背运动，使所述预对准光机组件移动至硅片预对准工位；
步骤2、控制组件控制所述承片单元和所述预对准光机组件以对所述硅片进行预对准；
步骤3、控制组件根据所述硅片的尺寸和硅片边缘曝光工位的需求控制同步双向运动模组驱动预对准光机组件和边缘曝光组件相对于所述硅片同步相向或相背运动，使所述边缘曝光组件移动至所述硅片边缘曝光工位；
步骤4、控制组件控制所述承片单元和所述边缘曝光组件对所述硅片进行边缘曝光处理。
优选地，在上述对硅片进行预对准和边缘曝光处理的方法中，所述承片 单元包括旋转台、定位台及运动模组，所述运动模组包括旋转单元、升降单元和位置补偿单元，所述步骤2具体包括以下步骤：
步骤21、所述旋转台吸附所述硅片，所述旋转单元带动所述旋转台和硅片旋转，所述预对准光机组件采集硅片边缘信息，所述控制组件根据所述硅片边缘信息计算所述硅片中心相对所述旋转台中心的偏心量，判断所述偏心量是否满足硅片与旋转台的定心精度，是则执行步骤26，否则执行步骤22；
步骤22、所述旋转台带动所述硅片旋转，将所述偏心量最大值所在的方向旋转至位置补偿单元运动方向；
步骤23、所述升降单元带动所述旋转台和硅片向下运动，到达与所述定位台的交接位，所述旋转台释放硅片，所述定位台吸附硅片，所述升降单元继续下降，带动所述旋转台运动至交接低位；
步骤24、所述控制组件根据所述硅片中心相对旋转台中心的偏心量控制所述位置补偿单元带动所述定位台在水平方向上移动，使所述硅片的中心与旋转台的中心重合；
步骤25、所述升降单元带动旋转台向上运动至交接位，所述定位台释放硅片，所述旋转台吸附硅片，返回步骤21；
步骤26、所述旋转单元带动所述旋转台和硅片旋转，所述预对准光机组件采集硅片边缘信息，所述控制组件根据所述硅片边缘信息计算所述硅片的缺口位置，并根据所述硅片的缺口位置控制所述旋转单元旋转以实现所述硅片的定向；
步骤27、判断是否满足硅片的定向精度，否则执行步骤26。
综上所述，本发明提出的硅片处理装置及方法，将预对准光机组件及边缘曝光组件设于同步双向运动模组上，降低了装置的占用空间，节约了安装成本；通过控制组件控制底板上的同步双向运动模组、旋转单元以及位置补偿单元，降低了操作复杂度；通过控制同步双向运动模组以驱动预对准光机组件及边缘曝光组件同时运动，对不同尺寸的硅片进行预对准及边缘曝光操作，节省了切换时间，提高了工作效率。
附图说明
图1为本发明一实施例中的硅片处理装置结构主视图；
图2为图1的左视图；
图3为使用本发明一实施例的硅片处理装置对硅片进行预对准及边缘曝光的工作流程；
图4为本发明又一实施例中的同步双向运动模组结构示意图；
其中，1-底板；2-控制组件；3-预对准光机组件；31-预对准镜头；32-点光源；4-同步双向运动模组；41-左滑块；42-右滑块；43-左右旋丝杠；431-第一轨道；432-第二轨道；5-边缘曝光组件；51-曝光镜头；52-光阑切换部件；6-升降单元；7-旋转单元；71-旋转台；8-位置补偿单元；81-定位台；9-硅片。
具体实施方式
下面将结合示意图对本发明的具体实施方式进行更详细的描述。根据下列描述和权利要求书，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
请参考图1和图2，图1为本发明一实施例中的硅片处理装置结构主视图，图2为图1的左视图。本发明提出了一种硅片处理装置，用于对硅片9进行预对准和边缘曝光处理，包括：底板1、控制组件2、预对准光机组件3、边缘曝光组件5、承片单元以及同步双向运动模组4，在此，所述承片单元包括旋转台71、定位台81及运动模组，运动模组包括旋转单元7、升降单元6和位置补偿单元8。预对准光机组件3及边缘曝光组件5的工作原理在现有技术中已经发展广泛，因此，本发明实施例对此不进行赘述。
具体的，控制组件2首先根据硅片9的尺寸控制同步双向运动模组4驱动预对准光机组件3和边缘曝光组件5相对于硅片9同步相向或相背运动(在此，所述控制组件2控制同步双向运动模组4驱动预对准光机组件3和边缘曝光组件5相对于硅片9同时相背运动)，使预对准光机组件3移动至硅片9的预对准工位；接着，控制组件2采集预对准光机组件3产生的信息，例如可以是预对准光机组件3所采集的硅片边缘的位置信息，从而可以得到所述硅片9在所述承片单元上的相对位置，进而可以控制升降单元6、旋转单元7 以及位置补偿单元8以对硅片9进行预对准，即调整所述硅片9在所述承片单元上的相对位置以使得所述硅片9在所述承片单元上的相对位置达到要求；然后，控制组件2根据硅片9的尺寸和硅片9边缘曝光工位的需求控制同步双向运动模组4驱动预对准光机组件3和边缘曝光组件5相对于硅片9同步相向或相背运动，使边缘曝光组件5移动至硅片9的边缘曝光工位；最后，控制升降单元6、旋转单元7、位置补偿单元8以及边缘曝光组件5对硅片9进行边缘曝光处理，即可以实现对于硅片9边缘预定位置的曝光。
请继续参见图1和图2，同步双向运动模组4固定在底板1上，预对准光机组件3和边缘曝光组件5分别固定在同步双向运动模组4上，预对准光机组件3和边缘曝光组件5的轴线相对旋转台71的中心对称分布。控制组件2与预对准光机组件3、边缘曝光组件5和同步双向运动模组4中的每一个电联接，控制组件2根据硅片9的尺寸和硅片边缘曝光工位的需求控制同步双向运动模组4驱动预对准光机组件3和边缘曝光组件5相对于硅片9同步相向或相背运动。具体的，预对准光机组件3包括：点光源32、预对准镜头31及图像采集部件，其中，所述点光源发出照射光线照射所述硅片的边缘，经过所述硅片的边缘的照射光线到达所述预对准镜头以由所述图像采集部件采集所述硅片的信息；边缘曝光组件5包括：曝光镜头51及光阑切换部件52，其中，所述曝光镜头用于对所述硅片进行边缘曝光，所述光阑切换部件用于调节曝光光斑的大小。
具体的，本发明一优选实施例中，同步双向运动模组4包括直线导向组件、驱动器、左右旋丝杠43、左滑块41以及右滑块42，左右旋丝杠43穿过左滑块41和右滑块42并与驱动器连接，直线导向组件包括平行设置的第一轨道431及第二轨道432，左滑块41和右滑块42均跨接在第一轨道431和第二轨道432上；预对准光机组件3固定在左滑块41上，边缘曝光组件5固定在右滑块42上。
具体的，左右旋丝杠43上对称设置有左旋外螺纹和右旋外螺纹，左滑块41内部设置有与左旋外螺纹匹配的左旋内螺纹；右滑块42内部设置有与右旋外螺纹匹配的右旋内螺纹。当驱动器驱动左右旋丝杠43旋转时，左滑块41与右滑块42均沿着第一轨道431和第二轨道432同步相向或相背运动，从而 带动预对准光机组件3和边缘曝光组件5相对于硅片9同步相向或相背运动以调整预对准光机组件3的预对准工位及边缘曝光组件5的曝光工位。
本发明中，同步双向运动模组4带动预对准光机组件3及边缘曝光组件5同时运动，操作简单，节省了切换时间，结构简单，降低了整个装置的占用空间及成本。
承片单元包括旋转台71、定位台81及运动模组，运动模组包括旋转单元7、升降单元6和位置补偿单元8。升降单元6、位置补偿单元8均与底板1连接，其中，所述位置补偿单元8可以直接与所述底板1连接，也可以通过其他部件间接与所述底板1连接；旋转单元7设于升降单元6上，旋转台71固定在旋转单元7上，用于承载硅片9；升降单元6带动旋转单元7沿垂直于底板1的方向运动；定位台81设在旋转台71外围，并固定在位置补偿单元8上，可承载硅片9在位置补偿单元8的驱动下沿水平方向运动，以对硅片9相对于旋转台71的水平位置进行调整，从而完成预对准。
具体的，预对准光机组件3中的图像采集部件采集硅片9的信息，控制组件2根据采集到的硅片9的信息控制升降单元6、旋转单元7以及位置补偿单元8对硅片9相对于旋转台71的偏移量进行调整，完成硅片9的预对准操作。
更具体的，旋转台71吸附硅片9，旋转单元7带动旋转台71和硅片9旋转，预对准光机组件3采集硅片边缘信息，控制组件2根据硅片9的边缘信息计算硅片9的中心相对旋转台71中心的偏心量，判断偏心量是否满足硅片9与旋转台71的定心精度。
当偏心量不满足硅片9与旋转台71的定心精度时，旋转台71带动硅片9旋转，将偏心量最大值所在的方向旋转至位置补偿单元8的运动方向，即水平上某一方向。升降单元6带动旋转台71和硅片9沿垂直于底板1的方向运动，到达与定位台81的交接位，旋转台71释放硅片9，定位台81吸附硅片9，升降单元6继续下降，带动旋转台71运动至交接低位(即低于交接位的位置)；控制组件2根据硅片9中心相对旋转台71中心的偏心量控制位置补偿单元8带动定位台82在水平方向上移动，使硅片9的中心与旋转台71的中心重合；升降单元6带动旋转台71向上运动至交接位，定位台82释放硅 片9，旋转台71吸附硅片9，完成预对准操作。
预对准操作完成后，旋转单元7带动旋转台71和硅片9旋转，预对准光机组件3采集硅片9的边缘信息，控制组件2根据硅片9的边缘信息计算其缺口位置，并根据缺口位置控制旋转单元7旋转以实现硅片9的定向。
控制组件2根据硅片9的尺寸和硅片9边缘曝光工位的需求控制同步双向运动模组4驱动预对准光机组件3和边缘曝光组件5沿第一轨道431及第二轨道432相对于硅片9同步相向或相背运动，使边缘曝光组件5对准硅片9的边缘曝光工位。控制组件2根据边缘曝光的要求，控制同步双向运动模组4上的边缘曝光组件5进行边缘曝光处理。
本发明一优选实施例中，可以实现硅片9的边缘曝光、环形曝光以及分段曝光，且曝光光斑的大小可以调节；具体的，通过曝光镜头51实现硅片9的边缘曝光、环形曝光以及分段曝光；通过光阑切换组件52，自切换曝光光斑的大小。
进一步，上述硅片处理装置可对不同尺寸的硅片9进行预对准及边缘曝光处理，硅片9的尺寸包括但不限于为6寸，8寸及12寸。具体的，如图3所示，图3为使用本发明一实施例的硅片处理装置对硅片进行预对准及边缘曝光的工作流程。具体的，使用上述硅片处理装置对不同尺寸的硅片9进行预对准及边缘曝光处理的步骤如下。
步骤S1：控制组件2根据硅片9的尺寸控制同步双向运动模组4驱动预对准光机组件3和边缘曝光组件5相对于硅片9同步相向或相背运动，使预对准光机组件3移动至硅片预对准工位；
步骤S2：控制组件2采集预对准光机组件3产生的信息，控制升降单元6、旋转单元7以及位置补偿单元8对硅片9进行预对准；
步骤S3：控制组件2根据硅片9的尺寸和硅片9边缘曝光工位的需求控制同步双向运动模组4驱动预对准光机组件3和边缘曝光组件5相对于硅片9同步相向或相背运动，使边缘曝光组件5移动至硅片边缘曝光工位；
步骤S4：控制组件2控制升降单元6、旋转单元7、位置补偿单元8以及边缘曝光组件5对硅片9进行边缘曝光处理。
优选的，上述步骤中，若硅片9的尺寸为6寸，进行边缘曝光处理时， 预对准光机组件3与边缘曝光组件5相距基本为6寸；若硅片9的尺寸为8寸，进行边缘曝光处理时，则预对准光机组件3与边缘曝光组件5相距基本为8寸。
步骤S5：完成曝光处理后，若更换后的硅片9的尺寸发生变化，则重复步骤S1-S4；具体的，例如当硅片9的尺寸从6寸变为8寸时，左滑块41及右滑块42分别沿第一轨道431及第二轨道432至少同步相背运动各25mm，就可以使得预对准光机组件3与边缘曝光组件5相距8寸以上，从而再通过左滑块41和右滑块42的运动以驱动预对准光机组件3和边缘曝光组件5相对于硅片9同步相向或相背运动以及控制承片单元的运动而实现预对准和曝光。
具体的，如上所述，步骤S2包括：
旋转台71吸附硅片9，旋转单元7带动旋转台71和硅片9旋转，预对准光机组件3采集硅片边缘信息，控制组件2根据硅片9的边缘信息计算硅片9的中心相对旋转台71中心的偏心量，判断偏心量是否满足硅片9与旋转台71的定心精度。
当偏心量不满足硅片9与旋转台71的定心精度时，旋转台71带动硅片9旋转，将偏心量最大值所在的方向旋转至位置补偿单元8的运动方向，即水平上某一方向。升降单元6带动旋转台71和硅片9沿垂直方向运动，到达与定位台81的交接位，旋转台71释放硅片9，定位台81吸附硅片9，升降单元6继续下降，带动旋转台71运动至交接低位；控制组件2根据硅片9中心相对旋转台71中心的偏心量控制位置补偿单元8带动定位台82在水平方向上移动，使硅片9的中心与旋转台71的中心重合；升降单元6带动旋转台72向上运动至交接位，定位台82释放硅片9，旋转台72吸附硅片9，完成预对准操作。
在本发明的又一实施例中，如图4所示，图4为本发明又一实施例中同步双向运动模组结构示意图。本实施例中，同步双向运动模组4包括直线导向组件、驱动器、旋转齿轮、第一齿条以及第二齿条，第一齿条与第二齿条平行分布在旋转齿轮两侧，并与旋转齿轮啮合；旋转齿轮与所述驱动器连接，第一齿条和所述第二齿条的齿口方向相反，预对准光机组件3固定在第一齿 条上，边缘曝光组件5固定在第二齿条上，驱动器驱动旋转齿轮旋转，带动第一齿条与第二齿条分别沿着第一轨道431及第二轨道432同步相向或相背运动，以调整预对准光机组件3的预对准工位及边缘曝光组件4的曝光工位。
当一硅片9曝光完成后，更换的硅片9的尺寸与前一个不同，则需要从新调整预对准光机组件3与边缘曝光组件5的工位，具体的，当硅片9的尺寸从6寸变为8寸时，旋转齿轮逆时针转动，至少转动周长25mm，则第一齿条及第二齿条分别相背运动各至少25mm，就可以使得预对准光机组件3与边缘曝光组件5相距8寸以上，接着再完成工位调整；当硅片9的尺寸需要从8寸变为6寸时，旋转齿轮顺时针转动，转动周长可以为25mm，则第一齿条及第二齿条分别相向运动各25mm，就可以使得预对准光机组件3与边缘曝光组件5相距6寸。
本发明对本实施例中的齿轮及齿条的材料及大小等均不作任何限制。
综上所述，本发明提出的硅片处理装置及方法，将预对准光机组件及边缘曝光组件设于同步双向运动模组上，降低了装置的占用空间，节约了安装成本；通过控制组件控制底板上的同步双向运动模组、旋转单元以及位置补偿单元，降低了操作复杂度；通过控制同步双向运动模组以驱动预对准光机组件及边缘曝光组件同时运动，对不同尺寸的硅片进行预对准及边缘曝光操作，节省了切换时间，提高了工作效率。
上述仅为本发明的优选实施例而已，并不对本发明起到任何限制作用。任何所属技术领域的技术人员，在不脱离本发明的技术方案的范围内，对本发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动，均属未脱离本发明的技术方案的内容，仍属于本发明的保护范围之内。

Claims (10)

  1. 一种硅片处理装置，用于对一硅片进行预对准和边缘曝光处理，其特征在于，所述硅片处理装置包括：底板、控制组件、预对准光机组件、边缘曝光组件、承片单元及同步双向运动模组，所述同步双向运动模组固定在所述底板上，所述预对准光机组件和边缘曝光组件分别固定在所述同步双向运动模组上，且所述预对准光机组件和边缘曝光组件相对所述承片单元的中心对称分布，所述控制组件与预对准光机组件、边缘曝光组件和同步双向运动模组中的每一个电联接，所述控制组件根据所述硅片的尺寸和硅片边缘曝光的工位需求控制所述同步双向运动模组驱动所述预对准光机组件和边缘曝光组件相对于所述硅片同步相向或相背运动以及控制所述承片单元以使所述硅片运动。
  2. 如权利要求1所述的硅片处理装置，其特征在于，所述承片单元包括旋转台、定位台及运动模组，所述运动模组包括旋转单元、升降单元和位置补偿单元，所述旋转台固定在所述旋转单元上，所述旋转台可承载所述硅片在所述旋转单元驱动下旋转，所述旋转单元固定在所述升降单元上，所述升降单元能够带动所述旋转单元垂向于所述底板运动，所述定位台设在所述旋转台外围，并固定在所述位置补偿单元上，所述定位台可承载所述硅片在所述位置补偿单元的驱动下相对于所述旋转台沿水平方向运动。
  3. 如权利要求1所述的硅片处理装置，其特征在于，所述同步双向运动模组包括直线导向组件、驱动器、左右旋丝杠、左滑块以及右滑块，所述左右旋丝杠穿过所述左滑块和右滑块并与所述驱动器连接，所述左滑块和右滑块滑动设置在所述直线导向组件上，所述预对准光机组件固定在所述左滑块上，所述边缘曝光组件固定在所述右滑块上，所述左右旋丝杠上对称设置有左旋外螺纹和右旋外螺纹，所述左滑块内部设置有与所述左旋外螺纹匹配的左旋内螺纹，所述右滑块内部设置有与所述右旋外螺纹匹配的右旋内螺纹，所述驱动器驱动所述左右旋丝杠旋转，带动所述左滑块与右滑块沿着所述直线导向组件同步相向或相背运动。
  4. 如权利要求3所述的硅片处理装置，其特征在于，所述直线导向组件 包括平行设置的第一轨道及第二轨道，所述左滑块和右滑块均跨接在所述第一轨道和第二轨道上。
  5. 如权利要求1所述的硅片处理装置，其特征在于，所述同步双向运动模组包括直线导向组件、驱动器、旋转齿轮、第一齿条以及第二齿条，所述第一齿条与第二齿条平行分布在所述旋转齿轮两侧，并与所述旋转齿轮啮合，所述旋转齿轮与所述驱动器连接，所述第一齿条和所述第二齿条的齿口方向相反，所述预对准光机组件固定在所述第一齿条上，所述边缘曝光组件固定在所述第二齿条上，所述驱动器驱动所述旋转齿轮旋转，带动所述第一齿条与第二齿条沿着所述直线导向组件同步相向或相背运动。
  6. 如权利要求5所述的硅片处理装置，其特征在于，所述直线导向组件包括平行设置的第一导轨和第二导轨，所述第一齿条滑动设置在所述第一导轨上，所述第二齿条滑动设置在所述第二导轨上。
  7. 如权利要求1所述的硅片处理装置，其特征在于，所述预对准光机组件包括：点光源、预对准镜头及图像采集部件；所述点光源发出照射光线照射所述硅片的边缘，经过所述硅片的边缘的照射光线到达所述预对准镜头以由所述图像采集部件采集所述硅片的信息。
  8. 如权利要求1所述的硅片处理装置，其特征在于，所述边缘曝光组件包括：曝光镜头及光阑切换部件；所述曝光镜头用于对所述硅片进行边缘曝光，所述光阑切换部件用于调节曝光光斑的大小。
  9. 一种使用如权利要求1至8中任意一项所述的硅片处理装置进行硅片处理的方法，其特征在于，包括：
    步骤1、将硅片放置在承片单元上，控制组件根据所述硅片的尺寸控制同步双向运动模组驱动预对准光机组件和边缘曝光组件相对于所述硅片同步相向或相背运动，使所述预对准光机组件移动至硅片预对准工位；
    步骤2、控制组件控制所述承片单元和所述预对准光机组件以对所述硅片进行预对准；
    步骤3、控制组件根据所述硅片的尺寸和硅片边缘曝光工位的需求控制同步双向运动模组驱动预对准光机组件和边缘曝光组件相对于所述硅片同步相向或相背运动，使所述边缘曝光组件移动至所述硅片边缘曝光工位；
    步骤4、控制组件控制所述承片单元和所述边缘曝光组件对所述硅片进行边缘曝光处理。
  10. 根据权利要求9所述的硅片处理的方法，其特征在于：所述承片单元包括旋转台、定位台及运动模组，所述运动模组包括旋转单元、升降单元和位置补偿单元，所述步骤2具体包括以下步骤：
    步骤21、所述旋转台吸附所述硅片，所述旋转单元带动所述旋转台和硅片旋转，所述预对准光机组件采集硅片边缘信息，所述控制组件根据所述硅片边缘信息计算所述硅片中心相对所述旋转台中心的偏心量，判断所述偏心量是否满足硅片与旋转台的定心精度，是则执行步骤26，否则执行步骤22；
    步骤22、所述旋转台带动所述硅片旋转，将所述偏心量最大值所在的方向旋转至位置补偿单元运动方向；
    步骤23、所述升降单元带动所述旋转台和硅片向下运动，到达与所述定位台的交接位，所述旋转台释放硅片，所述定位台吸附硅片，所述升降单元继续下降，带动所述旋转台运动至交接低位；
    步骤24、所述控制组件根据所述硅片中心相对旋转台中心的偏心量控制所述位置补偿单元带动所述定位台在水平方向上移动，使所述硅片的中心与旋转台的中心重合；
    步骤25、所述升降单元带动旋转台向上运动至交接位，所述定位台释放硅片，所述旋转台吸附硅片，返回步骤21；
    步骤26、所述旋转单元带动所述旋转台和硅片旋转，所述预对准光机组件采集硅片边缘信息，所述控制组件根据所述硅片边缘信息计算所述硅片的缺口位置，并根据所述硅片的缺口位置控制所述旋转单元旋转以实现所述硅片的定向；
    步骤27、判断是否满足硅片的定向精度，否则执行步骤26。
PCT/CN2018/084774 2017-04-28 2018-04-27 硅片处理装置及方法 WO2018196838A1 (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115547915A (zh) * 2022-11-28 2022-12-30 四川上特科技有限公司 一种晶圆曝光夹具及曝光装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111383979B (zh) * 2018-12-27 2023-03-03 上海微电子装备（集团）股份有限公司 翘曲片的预对准装置及方法
CN112965343A (zh) * 2021-02-08 2021-06-15 上海度宁科技有限公司 工件台结构及包含该结构的光刻系统及其曝光方法
CN115440643B (zh) * 2022-10-11 2023-04-07 深圳技术大学 一种晶圆运载装置及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050248754A1 (en) * 2004-05-05 2005-11-10 Chun-Sheng Wang Wafer aligner with WEE (water edge exposure) function
KR20060107986A (ko) * 2005-04-11 2006-10-17 삼성전자주식회사 다양한 크기의 웨이퍼를 수용할 수 있는 웨이퍼에지노광장치
US7901854B2 (en) * 2009-05-08 2011-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure unit
CN105372941A (zh) * 2014-08-28 2016-03-02 上海微电子装备有限公司 一种提供玻璃基板边缘曝光的多功能曝光机
CN105632971A (zh) * 2014-11-26 2016-06-01 上海微电子装备有限公司 一种硅片处理装置及方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960016175B1 (en) * 1987-08-28 1996-12-04 Tokyo Electron Ltd Exposing method and apparatus thereof
US5168021A (en) * 1989-09-21 1992-12-01 Ushio Denki Method for exposing predetermined area of peripheral part of wafer
JPH08335545A (ja) * 1995-06-07 1996-12-17 Hitachi Ltd 露光方法および装置
JPH0950951A (ja) * 1995-08-04 1997-02-18 Nikon Corp リソグラフィ方法およびリソグラフィ装置
KR100257279B1 (ko) 1996-06-06 2000-06-01 이시다 아키라 주변노광장치 및 방법
JP3356047B2 (ja) * 1997-11-26 2002-12-09 ウシオ電機株式会社 ウエハ周辺露光装置
JP3820946B2 (ja) * 2001-09-17 2006-09-13 ウシオ電機株式会社 周辺露光装置
JP4069081B2 (ja) * 2004-01-13 2008-03-26 東京エレクトロン株式会社 位置調整方法及び基板処理システム
KR100565760B1 (ko) 2004-08-23 2006-03-29 동부아남반도체 주식회사 멀티플렉서
JP4642543B2 (ja) * 2005-05-09 2011-03-02 東京エレクトロン株式会社 周縁露光装置、塗布、現像装置及び周縁露光方法
KR100965570B1 (ko) * 2005-12-29 2010-06-23 엘지디스플레이 주식회사 기판의 주변 노광장치 및 노광방법
JP5410212B2 (ja) * 2009-09-15 2014-02-05 株式会社Ｓｏｋｕｄｏ 基板処理装置、基板処理システムおよび検査周辺露光装置
KR101609695B1 (ko) 2014-11-14 2016-04-20 (주)로봇앤드디자인 영상촬상소자를 이용한 투명 웨이퍼 정렬 장치 및 방법
CN105789085B (zh) * 2014-12-24 2018-08-14 上海微电子装备（集团）股份有限公司 一种兼容多种工艺硅片的物料传输系统
JP6661270B2 (ja) * 2015-01-16 2020-03-11 キヤノン株式会社 露光装置、露光システム、および物品の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050248754A1 (en) * 2004-05-05 2005-11-10 Chun-Sheng Wang Wafer aligner with WEE (water edge exposure) function
KR20060107986A (ko) * 2005-04-11 2006-10-17 삼성전자주식회사 다양한 크기의 웨이퍼를 수용할 수 있는 웨이퍼에지노광장치
US7901854B2 (en) * 2009-05-08 2011-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure unit
CN105372941A (zh) * 2014-08-28 2016-03-02 上海微电子装备有限公司 一种提供玻璃基板边缘曝光的多功能曝光机
CN105632971A (zh) * 2014-11-26 2016-06-01 上海微电子装备有限公司 一种硅片处理装置及方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115547915A (zh) * 2022-11-28 2022-12-30 四川上特科技有限公司 一种晶圆曝光夹具及曝光装置
CN115547915B (zh) * 2022-11-28 2023-02-14 四川上特科技有限公司 一种晶圆曝光夹具及曝光装置

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