WO2018192070A1 - 一种蒸发源装置 - Google Patents

一种蒸发源装置 Download PDF

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Publication number
WO2018192070A1
WO2018192070A1 PCT/CN2017/087787 CN2017087787W WO2018192070A1 WO 2018192070 A1 WO2018192070 A1 WO 2018192070A1 CN 2017087787 W CN2017087787 W CN 2017087787W WO 2018192070 A1 WO2018192070 A1 WO 2018192070A1
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WO
WIPO (PCT)
Prior art keywords
cavity
source device
evaporation source
wall body
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/087787
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English (en)
French (fr)
Inventor
沐俊应
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US15/566,711 priority Critical patent/US20190048458A1/en
Publication of WO2018192070A1 publication Critical patent/WO2018192070A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Definitions

  • the present invention relates to the field of liquid crystal panel fabrication, and more particularly to an evaporation source device.
  • OLED Organic Light Emitting
  • Diode Organic Light Emitting Diode
  • advantages such as high contrast, wide color gamut, flexibility, light weight and energy saving.
  • OLED display technology has gradually spread in the fields of mobile devices such as smart phones and tablet computers, flexible wearable devices such as smart watches, large-scale curved TV, white light lighting, etc., and the development momentum is strong.
  • OLED technology mainly includes small molecule OLED technology based on vacuum evaporation technology and polymer OLED technology based on solution process.
  • the evaporation machine is the main equipment for the production of small-molecule OLED devices that have been mass-produced.
  • the core part of the equipment is the evaporation source device, which is divided into a point evaporation source, a line evaporation source, and a surface evaporation source.
  • the line evaporation source is currently an important OLED mass production technology, and is mainly divided into an integrated line evaporation source and a conveyor line evaporation source.
  • the existing line evaporation source is designed to be linear. In order to ensure the uniformity of the film thickness, the evaporation source needs to be longer than the substrate, resulting in low material utilization rate, and the use of the round hole type ejection port is likely to cause material blockage and decrease. The rate of production.
  • the invention provides an evaporation source device comprising:
  • the heating member is configured to heat the evaporation material to form an evaporation gas, and the body is provided with a first cavity for accommodating the vapor deposition gas;
  • the body includes a first wall body, and an outer wall surface of the first wall body is curved in a curved shape toward the first cavity;
  • the first wall body is provided with a slit-shaped injection port and communicates with the first cavity, the injection port is curvedly distributed along a bending direction of the first wall body, and the first cavity is The vapor deposition gas in the body is exported to the outside world.
  • the slit-shaped ejection opening has a width that gradually increases from the middle to the both ends.
  • the heating structure is configured to control the temperature of the first cavity to increase first and then decrease along a direction of bending of the first wall.
  • the heating member is configured to segmentally control a temperature of the first cavity in a direction of bending along the first wall.
  • the inner wall surface of the first wall body has a curved shape that is curved toward the first cavity.
  • the heating member is disposed within the first cavity.
  • the body is provided with a second cavity
  • the body includes a second wall body
  • the second wall body is provided with an opening portion communicating with the second cavity
  • the body includes a third wall body having an input port communicating with the first cavity
  • the second cavity communicating with the input port through the opening.
  • the body further includes a gas transmission conduit for communicating the opening with the input port.
  • the heating member is disposed within the second cavity.
  • the first cavity is provided with a plurality of heating wires to segmentally control the temperature of the first cavity in a bending direction along the first wall.
  • Another embodiment of the present invention provides another evaporation source device, wherein the evaporation source device includes:
  • the heating member is configured to heat the evaporation material to form an evaporation gas, and the body is provided with a first cavity for accommodating the vapor deposition gas;
  • the body includes a first wall body, an outer wall surface of the first wall body is curved in a curved shape toward the first cavity, and the heating member segment controls the first cavity along the first wall The temperature in the direction of bending of the wall;
  • the first wall body is provided with a slit-shaped injection port and communicates with the first cavity, the injection port is curvedly distributed along a bending direction of the first wall body, and the first cavity is The vapor deposition gas in the body is led to the outside, wherein the width of the slit-shaped ejection opening gradually increases from the middle to the both ends.
  • the heating structure is configured to control the temperature of the first cavity to increase first and then decrease along a direction of bending of the first wall.
  • the inner wall surface of the first wall body has a curved shape that is curved toward the first cavity.
  • the heating member is disposed within the first cavity.
  • the body is provided with a second cavity
  • the body includes a second wall body
  • the second wall body is provided with an opening portion communicating with the second cavity
  • the body includes a third wall body having an input port communicating with the first cavity
  • the second cavity communicating with the input port through the opening.
  • the body further includes a gas transmission conduit for communicating the opening with the input port.
  • the heating member is disposed within the second cavity.
  • the first cavity is provided with a plurality of heating wires to segmentally control the temperature of the first cavity in a bending direction along the first wall.
  • the first cavity is provided with a weir, and the heating member is disposed within the weir.
  • the slit-like ejection opening has a length that is comparable to the length of the outer wall surface of the first wall.
  • the evaporation source device comprises a body and a heating member; the heating member is configured to heat the evaporation material to form an evaporation gas, and the body is provided to receive the vapor deposition gas.
  • a first cavity the body includes a first wall body, the outer wall surface of the first wall body is curved in a curved shape toward the first cavity; and the first wall body is provided with a slit shape
  • the injection port is in communication with the first cavity, and the injection port is curvedly distributed along a bending direction of the first wall body, and the vapor deposition gas in the first cavity is led to the outside.
  • the solution can change the flow direction of the vapor deposition gas through the curved slit-shaped injection port to deposit more on the substrate, thereby improving the material utilization rate.
  • the injection port is designed as a slit shape, which can reduce the risk of plugging and improve the mass production. Utilization rate.
  • Figure 1 is a perspective view showing a three-dimensional structure of an evaporation source device in a preferred embodiment of the present invention.
  • FIG. 2A is a front elevational view showing the evaporation source device shown in FIG. 1.
  • FIG. 2B is a schematic top plan view of the evaporation source device shown in FIG. 1.
  • FIG. 2C is another schematic top plan view of the evaporation source device shown in FIG. 1.
  • FIG. 2D is a partial view showing a schematic plan view of the evaporation source device shown in FIG. 2C.
  • FIG. 2E is a schematic diagram of an application scenario of the evaporation source device shown in FIG. 1.
  • FIG 3 is a schematic perspective view showing another perspective structure of an evaporation source device in a preferred embodiment of the present invention.
  • FIG. 4A is an exploded perspective view of the evaporation source body in the evaporation source device shown in FIG. 3.
  • 4B is a front elevational view showing the evaporation source device shown in FIG. 3.
  • 4C is a schematic top plan view of the evaporation source device shown in FIG. 3.
  • 4D is a schematic top plan view of the evaporation source device shown in FIG. 3.
  • 4E is a schematic diagram of an application scenario of the evaporation source device shown in FIG. 3.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • a plurality means two or more unless otherwise stated.
  • the term “comprises” and its variations are intended to cover a non-exclusive inclusion.
  • FIG. 1 is a schematic perspective structural view of an evaporation source device according to a preferred embodiment of the present invention.
  • the evaporation source device 100 of the preferred embodiment includes a body 11 and a heating member 12;
  • the heating member 12 is used to heat the vapor deposition material to form a vapor deposition gas, and the body 11 is provided with a cavity 111 for accommodating the vapor deposition gas;
  • the body 11 includes a wall 112, and an outer wall surface of the wall 112 is curved in a curved shape in the cavity 111;
  • the wall 112 is provided with a slit-shaped injection port 1121 and communicates with the cavity 111.
  • the injection port 1121 is curvedly distributed along the bending direction of the wall 112, and the vapor deposition gas in the cavity 111 is exported to the wall 112. external.
  • FIG. 2A is a schematic front view of the evaporation source device shown in FIG. 1.
  • the outer wall surface of the wall body 112 is gradually curved from the both ends toward the intermediate portion to form a curved surface (ie, a curved surface).
  • the degree of bending of the curved wall 112 can be set according to actual conditions.
  • FIG. 2E is a schematic diagram of an application scenario of the evaporation source device shown in FIG. 1.
  • the ejection opening 1121 is provided on the curved wall 112, and the flow direction of the vapor deposition gas can be changed, so that the vapor deposition gas is more concentrated toward the intermediate portion and deposited on the substrate A.
  • the inner wall surface of the wall body 112 may have a curved shape that is curved in the cavity 111, or may have a planar shape, or may have a curved shape that is curved toward the outer wall surface of the wall body 112.
  • FIG. 2B is a schematic top plan view of the evaporation source device shown in FIG. 1.
  • the slit-shaped ejection opening 1121 may be a slit having a uniform width.
  • the width of the slit-shaped ejection opening 1121 may be a slit having a non-uniform width in accordance with the degree of bending of the wall body 112. Further, in order to improve the uniformity of the deposition thickness of the vapor deposition material on the substrate A, the width of the slit-shaped ejection opening 1121 may gradually become larger from the middle to the both ends.
  • the slit-shaped ejection opening 1121 may be a slit having a non-uniform width.
  • the x1-x1 direction is the direction in which the length of the ejection opening 1121 is located, and the width of the slit-shaped ejection opening 1121 is from the middle (width in the y1-y1 direction) to both ends (y2-y2 direction).
  • the width in the y3-y3 direction is gradually increased and then decreased, so that the thickness of the vapor deposition gas ejected from the ejection opening 1121 on the substrate A as a film is more uniform.
  • the length of the ejection opening 1121 is equivalent to the arc length of the wall body 112.
  • a heating member 12 is disposed within the cavity 111.
  • the cavity 111 may be provided with a crucible, and the heating member 12 and the vapor deposition material may be disposed in the crucible to heat to form a vapor deposition gas.
  • the evaporation source device may further include a refrigeration member that may be disposed within the cavity 111 for cooperating with the heating member 112 to control the temperature within the cavity 111.
  • the evaporation source device may further include a PID control system for precisely controlling the temperature within the cavity 111.
  • the heating structure 12 is used to control the temperature of the cavity 111 in the direction of bending along the wall 112 to increase first and then decrease.
  • the heating member 12 in order to further increase the uniformity of the film thickness when the vapor deposition gas is deposited on the substrate A, the heating member 12 can be used to segmentally control the temperature of the cavity 111 in the bending direction along the wall 112. As shown in FIG. 1, the heating member 12 may be a plurality of spaced heating wires to control the temperature of the cavity 111 in the direction along the bending direction of the wall 112 in stages. For example, when the width of the ejection opening 1121 is uniform, since the evaporation gas is more deposited toward the center of the substrate A, the temperature of the intermediate heating wire can be controlled to be lower than the temperature of the heating wire at both ends.
  • FIG. 3 is another schematic perspective structural view of an evaporation source device according to a preferred embodiment of the present invention.
  • the evaporation source device 200 of the preferred embodiment includes a body 21 and a heating member 22;
  • the heating member 22 is used to heat the vapor deposition material to form a vapor deposition gas, and the body 21 is provided with a first cavity 211 for accommodating the vapor deposition gas;
  • the body 21 includes a first wall 212, and an outer wall surface of the first wall 212 is curved in a curved shape toward the first cavity 211;
  • the first wall body 212 is provided with a slit-shaped injection port 2121 and communicates with the first cavity 211.
  • the injection port 2121 is curvedly distributed along the bending direction of the first wall body 212, and the first cavity body is disposed.
  • the vapor deposition gas of 211 is led to the outside.
  • FIG. 4B is a schematic front view of the evaporation source device shown in FIG. 1.
  • the outer wall surface of the first wall body 212 is gradually curved from the both ends toward the intermediate portion to form a curved surface (ie, a curved surface).
  • the degree of bending of the curved first wall body 212 can be set according to actual conditions.
  • FIG. 4E is a schematic diagram of an application scenario of the evaporation source device shown in FIG. 3. As shown in FIG. 4E, an ejection opening 2121 is provided on the curved first wall body 212, and the flow direction of the vapor deposition gas can be changed, so that the vapor deposition gas is more concentrated and deposited on the substrate B toward the intermediate portion.
  • the inner wall surface of the first wall 212 may be curved in a curved shape in the first cavity 211, or may be in a planar shape, or may be curved toward the outer wall surface of the first wall 212. Curved.
  • FIG. 4C is a top plan view of the evaporation source device shown in FIG.
  • the slit-shaped ejection opening 2121 may be a slit having a uniform width.
  • the width of the slit-shaped ejection opening 2121 may be a slit having a non-uniform width in accordance with the degree of bending of the first wall 212. Further, in order to improve the uniformity of the film thickness when depositing the vapor deposition material on the substrate B, the width of the slit-shaped ejection opening 2121 may gradually become larger from the middle to the both ends.
  • FIG. 4D is another schematic top view of the evaporation source device shown in FIG.
  • the slit-shaped ejection opening 1121 may be a slit whose width is gradually increased from the middle to the both ends, so that the vapor deposition gas which is ejected from the ejection opening 2121 is deposited on the substrate B as The thickness of the film is more uniform.
  • the length of the injection port 2121 is equivalent to the length of the curved outer wall surface of the first wall 212, that is, the arc length of the outer wall surface.
  • FIG. 4A is an exploded perspective view of the evaporation source body in the evaporation source device shown in FIG.
  • the body 21 is provided with a second cavity 213.
  • the body 21 further includes a second wall body 214, and the second wall body 214 is provided with an opening portion 2141 communicating with the second cavity 213.
  • the body 21 further includes a third wall 215 that is provided with an input port 2151 that communicates with the first cavity 211.
  • the second cavity 213 communicates with the input port 2151 through the opening portion 2141 to connect the first cavity 211 with the second cavity 213.
  • the body 21 further includes a gas delivery conduit 216 for communicating the opening 2141 with the input port 2151.
  • the shape of the gas transmission pipe 216 may be various, for example, a cylindrical shape, a rectangular tube shape, a core prism shape, or the like, which is not specifically limited in the present invention.
  • the gas transfer conduit 216 has a first port 2161 and a second port 2162.
  • the first port 2161 communicates with the input port 2151 of the first cavity 211
  • the second port 2162 communicates with the opening 2141 of the second cavity 213 to connect the first cavity 211 with the second cavity 213.
  • the heating member 22 is disposed within the second cavity 213.
  • the first cavity 211 may be provided with a crucible, and the heating member 22 and the vapor deposition material may be disposed in the crucible to heat the vapor deposition gas. Therefore, the heating member 22 located in the second cavity 213 is heated to form a vapor deposition gas, and the vapor deposition gas is received in the first cavity 211 through the gas transmission pipe 216, and then ejected by the injection port 2121. A thin film is deposited on the substrate B.
  • a plurality of heating wires 23 may be disposed in the first cavity 211 to control the first portion in sections.
  • the temperature of the cavity 211 in the direction of the bend along the first wall 212.
  • the temperature of the intermediate heating wire 23 can be controlled to be lower than the temperature of the heating wire at both ends.
  • the evaporation source device includes a body and a heating member; the heating member is configured to heat the evaporation material to form an evaporation gas, and the body is provided with a first cavity for accommodating the vapor deposition gas,
  • the body includes a first wall body, and the outer wall surface of the first wall body is curved in a curved shape toward the first cavity; the first wall body is provided with a slit-shaped injection port and communicates with the first cavity body, and the jet port edge
  • the curved direction of the first wall is curved and the vapor deposition gas in the first cavity is led to the outside.
  • the solution is changed by a curved slit-shaped ejection port to deposit more on the substrate, improve material utilization, improve vapor deposition shadow effect, and shorten the length of the body, thereby reducing equipment scale and cost.
  • the design of the injection port as a slit can reduce the risk of plugging and increase the rate of production.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种蒸发源装置(100)，包括本体(11)及加热构件(12)；加热构件(12)用于加热蒸镀材料形成蒸镀气体，本体设置有收容蒸镀气体的第一腔体(111)；本体包括第一壁体(112)，第一壁体(112)的外壁面呈向第一腔体(111)内弯曲的曲面状；第一壁体上设有呈缝隙状的喷射口(1121)并与第一腔体(111)连通，喷射口(1121)沿第一壁体(112)的弯曲方向弯曲分布，并将第一腔体(111)内的蒸镀气体导至外界。

Description

一种蒸发源装置 技术领域
本发明涉及液晶面板制作领域，特别是涉及一种蒸发源装置。
 背景技术
在信息社会的当代，作为可视信息传输媒介的显示器的重要性在进一步加强，为了在未来占据主导地位，显示器正朝着更轻、更薄、更低能耗、更低成本以及更好图像质量的趋势发展。
OLED（Organic Light Emitting Diode，有机发光二极管）显示技术较之当前主流的液晶显示技术，具有对比度高、色域广、柔性、轻薄、节能等突出优点。近年来OLED显示技术逐渐在智能手机和平板电脑等移动设备、智能手表等柔性可穿戴设备、大尺寸弧面电视、白光照明等领域普及，发展势头强劲。
OLED技术主要包括以真空蒸镀技术为基础的小分子OLED技术和以溶液制程为基础的高分子OLED技术。蒸镀机是当前已量产的小分子OLED器件生产的主要设备，其设备核心部分为蒸发源装置，分为点蒸发源、线蒸发源、面蒸发源等。线蒸发源为当前重要的OLED量产技术，主要分为一体式线蒸发源和输送式线蒸发源。
现有的线蒸发源设计为直线型，为保证膜厚均匀性，蒸发源要做的比基板更长，导致材料利用率低，且其使用圆孔型喷射口，易造成材料堵塞，降低了量产的稼动率。
因此，现有技术存在缺陷，急需改进。
 技术问题
本发明的目的在于提供一种改进的蒸发源装置。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种蒸发源装置，包括：
本体以及加热构件；
所述加热构件用于加热蒸镀材料形成蒸镀气体，所述本体设置有用于收容所述蒸镀气体的第一腔体；
所述本体包括第一壁体，所述第一壁体的外壁面呈向所述第一腔体内弯曲的曲面状；
所述第一壁体上设有一呈缝隙状的喷射口并与所述第一腔体连通，所述喷射口沿着所述第一壁体的弯曲方向弯曲分布，并将所述第一腔体内的蒸镀气体导出到外界。
在一些实施例中，所述呈缝隙状的喷射口的宽度由中间至两端逐渐变大。
在一些实施例中，所述加热结构用于控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度先增后减。
在一些实施例中，所述加热构件用于分段控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度。
在一些实施例中，所述第一壁体的内壁面呈向所述第一腔体内弯曲的曲面状。
在一些实施例中，所述加热构件设置于所述第一腔体内。
在一些实施例中，所述本体设置有第二腔体，所述本体包括第二壁体，所述第二壁体上设有与所述第二腔体连通的开口部；所述本体包括第三壁体，所述第三壁体设有与所述第一腔体连通的输入口；所述第二腔体通过所述开口部与所述输入口连通。
在一些实施例中，所述本体还包括气体传输管道，用于连通所述开口部与所述输入口。
在一些实施例中，所述加热构件设置于所述第二腔体内。
在一些实施例中，所述第一腔体内设置有若干个加热丝，以分段控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度。
本发明实施例还提供另一种蒸发源装置，其中，该蒸发源装置包括：
本体以及加热构件；
所述加热构件用于加热蒸镀材料形成蒸镀气体，所述本体设置有用于收容所述蒸镀气体的第一腔体；
所述本体包括第一壁体，所述第一壁体的外壁面呈向所述第一腔体内弯曲的曲面状，所述加热构件分段控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度；
所述第一壁体上设有一呈缝隙状的喷射口并与所述第一腔体连通，所述喷射口沿着所述第一壁体的弯曲方向弯曲分布，并将所述第一腔体内的蒸镀气体导出到外界，其中，所述呈缝隙状的喷射口的宽度由中间至两端逐渐变大。
在一些实施例中，所述加热结构用于控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度先增后减。
在一些实施例中，所述第一壁体的内壁面呈向所述第一腔体内弯曲的曲面状。
在一些实施例中，所述加热构件设置于所述第一腔体内。
在一些实施例中，所述本体设置有第二腔体，所述本体包括第二壁体，所述第二壁体上设有与所述第二腔体连通的开口部；所述本体包括第三壁体，所述第三壁体设有与所述第一腔体连通的输入口；所述第二腔体通过所述开口部与所述输入口连通。
在一些实施例中，所述本体还包括气体传输管道，用于连通所述开口部与所述输入口。
在一些实施例中，所述加热构件设置于所述第二腔体内。
在一些实施例中，所述第一腔体内设置有若干个加热丝，以分段控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度。
在一些实施例中，第一腔体内设置有坩埚，该加热构件设置于该坩埚内。
在一些实施例中，该呈缝隙状的喷射口的长度与第一壁体的外壁面的长度相当。
 有益效果
相较于现有的蒸发源装置，本发明提供的蒸发源装置包括本体以及加热构件；所述加热构件用于加热蒸镀材料形成蒸镀气体，所述本体设置有用于收容所述蒸镀气体的第一腔体；所述本体包括第一壁体，所述第一壁体的外壁面呈向所述第一腔体内弯曲的曲面状；所述第一壁体上设有一呈缝隙状的喷射口并与所述第一腔体连通，所述喷射口沿着所述第一壁体的弯曲方向弯曲分布，并将所述第一腔体内的蒸镀气体导出到外界。该方案可通过弯曲型的缝隙状喷射口改变蒸镀气体流向，使其更多地沉积到基板上，提高材料利用率，同时，喷射口设计为缝隙状可降低堵孔风险，提高量产的稼动率。
 附图说明
图1为本发明优选实施例中蒸发源装置的一种立体结构示意图。
图2A为图1所示的蒸发源装置的一种正视结构示意图。
图2B为图1所示的蒸发源装置的一种俯视结构示意图。
图2C为图1所示的蒸发源装置的另一种俯视结构示意图。
图2D为图2C所示的蒸发源装置的俯视结构示意图的局部图。
图2E为图1所示的蒸发源装置的应用场景示意图。
图3为本发明优选实施例中蒸发源装置的另一种立体结构示意图。
图4A为图3所示的蒸发源装置中蒸发源本体的一种分解示意图。
图4B为图3所示的蒸发源装置的一种正视结构示意图。
图4C为图3所示的蒸发源装置的一种俯视结构示意图。
图4D为图3所示的蒸发源装置的另一种俯视结构示意图。
图4E为图3所示的蒸发源装置的应用场景示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的模块是以相同标号表示。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
参阅图1，图1为本发明优选实施例提供的蒸发源装置的立体结构示意图。如图1所示，本优选实施例的蒸发源装置100，包括本体11以及加热构件12；
其中，加热构件12用于加热蒸镀材料形成蒸镀气体，本体11设置有用于收容该蒸镀气体的腔体111；
该本体11包括壁体112，该壁体112的外壁面呈向该腔体111内弯曲的曲面状；
壁体112上设有一呈缝隙状的喷射口1121并与该腔体111连通，该喷射口1121沿着该壁体112的弯曲方向弯曲分布，并将该腔体111内的蒸镀气体导出到外界。
具体地，参考图2A，图2A为图1所示的蒸发源装置的一种正视结构示意图。如图2A所示，该壁体112的外壁面由两端向中间部分逐渐弯曲，形成弧面（即曲面）。其中，该曲面状的壁体112的弯曲程度可根据实际情况进行设置。
参考图2E，图2E为图1所示的蒸发源装置的应用场景示意图。如图2E所示，在该呈曲面状的壁体112上设置喷射口1121，可改变蒸镀气体的气流方向，使蒸镀气体更多地往中间部分聚拢沉积到基板A上。
在一些实施方式中，该壁体112的内壁面可呈向该腔体111内弯曲的曲面状，也可呈平面状，还可以呈向该壁体112的外壁面弯曲的曲面状。
参考图2B，图2B为图1所示的蒸发源装置的一种俯视结构示意图。如图2B所示，该呈缝隙状的喷射口1121可以为宽度均匀的狭缝。
在一些实施方式中，配合该壁体112的弯曲程度，该呈缝隙状的喷射口1121的宽度可为宽度不均匀的狭缝。更进一步地，为了提升在基板A上沉积蒸镀材料膜厚的均匀性，该呈缝隙状的喷射口1121的宽度可由中间至两端逐渐变大。
比如，参考图2C和图2D。图2C为图1所示的蒸发源装置的另一种俯视结构示意图，图2D为图2C所示的蒸发源装置的俯视结构示意图的局部图。如图2C所示，该呈缝隙状的喷射口1121可以为宽度不均匀的狭缝。具体地，如图2D所示，x1-x1方向为喷射口1121长度所在方向，该呈缝隙状的喷射口1121的宽度由中间（y1-y1方向上的宽度）至两端（y2-y2方向、y3-y3方向上的宽度)逐渐变大然后减小，以使喷射口1121喷射出外界的蒸镀气体在基板A上沉积为薄膜时的厚度更加均匀。
在本发明实施例中，该喷射口1121的长度与该壁体112的弧长相当。
在一些实施方式中，参考图1，加热构件12设置于该腔体111内。实际应用中，该腔体111内可设置有坩埚，该加热构件12以及蒸镀材料可设置于该坩埚内，以加热形成蒸镀气体。
在一些实施例中，该蒸发源装置还可包括制冷构件，该制冷构件可设置于该腔体111内，用于与加热构件112协调工作以控制腔体111内的温度。
此外，该蒸发源装置还可包括PID控制系统，用于精确控制腔体111内的温度。
在一些实施方式中，加热结构12用于控制该腔体111在沿该壁体112的弯曲方向上的温度先增后减。
在一些实施方式中，为了进一步提升蒸镀气体在基板A上沉积时膜厚的均匀性，加热构件12可用于分段控制该腔体111在沿该壁体112的弯曲方向上的温度。如图1所示，该加热构件12可为若干根间隔设置的加热丝，以分段控制该腔体111在沿该壁体112的弯曲方向上的温度。比如，在喷射口1121的宽度均匀时，由于蒸发气体更多地往基板A中心沉积，因此可以控制中间的加热丝的温度低于两端加热丝的温度。
参考图3，图3为本发明优选实施例中蒸发源装置的另一种立体结构示意图。如图3所示，本优选实施例的蒸发源装置200，包括本体21以及加热构件22；
其中，加热构件22用于加热蒸镀材料形成蒸镀气体，本体21设置有用于收容该蒸镀气体的第一腔体211；
该本体21包括第一壁体212，第一壁体212的外壁面呈向第一腔体内211弯曲的曲面状；
第一壁体212上设有一呈缝隙状的喷射口2121并与该第一腔体211连通，该喷射口2121沿着该第一壁体212的弯曲方向弯曲分布，并将该第一腔体内211的蒸镀气体导出到外界。
具体地，参考图4B，图4B为图1所示的蒸发源装置的一种正视结构示意图。如图4B所示，该第一壁体212的外壁面由两端向中间部分逐渐弯曲，形成曲面（即弧面）。其中，该曲面状的第一壁体212的弯曲程度可根据实际情况进行设置。
参考图4E，图4E为图3所示的蒸发源装置的应用场景示意图。如图4E所示，在该呈曲面状的第一壁体212上设置喷射口2121，可改变蒸镀气体的气流方向，使蒸镀气体更多地往中间部分聚拢沉积到基板B上。
在一些实施方式中，该第一壁体212的内壁面可呈向该第一腔体211内弯曲的曲面状，也可呈平面状，还可以呈向该第一壁体212的外壁面弯曲的曲面状。
参考图4C，图4C为图3所示的蒸发源装置的一种俯视结构示意图。如图4C所示，该呈缝隙状的喷射口2121可以为宽度均匀的狭缝。
在一些实施方式中，配合该第一壁体212的弯曲程度，该呈缝隙状的喷射口2121的宽度可为宽度不均匀的狭缝。更进一步地，为了提升在基板B上沉积蒸镀材料时膜厚的均匀性，该呈缝隙状的喷射口2121的宽度可由中间至两端逐渐变大。
比如，参考图4D，图4D为图3所示的蒸发源装置的另一种俯视结构示意图。如图4D所示，该呈缝隙状的喷射口1121可为宽度由中间至两端逐渐变大后减小的狭缝，以使喷射口2121喷射出外界的蒸镀气体在基板B上沉积为薄膜时的厚度更加均匀。
在本发明实施例中，该喷射口2121的长度与该第一壁体212的呈曲面状的外壁面的长度相当，也即与该外壁面的弧长相当。
在一些实施方式中，参考图3和图4A，图4A为图3所示的蒸发源装置中蒸发源本体的一种分解示意图。如图4A所示，本体21设置有第二腔体213。具体地，该本体21还包括第二壁体214，该第二壁体214上设有与第二腔体213连通的开口部2141。该本体21还包括第三壁体215，该第三壁体215设有与第一腔体211连通的输入口2151。该第二腔体213通过开口部2141与输入口2151连通，以使该第一腔体211与第二腔体213连通。
继续参考图3和图4A，在一些实施方式中，本体21还包括气体传输管道216，该气体传输管道216用于连通开口部2141与输入口2151。其中，该气体传输管道216的形状可以由多种，比如，可以为圆筒状、方筒状、通芯棱镜状等等，本发明对此不作具体限定。
具体地，该气体传输管道216具有第一端口2161和第二端口2162。其中，第一端口2161与第一腔体211的输入口2151连通，第二端口2162与第二腔体213的开口部2141连通，以使该第一腔体211与第二腔体213连通。
在一些实施方式中，参考图3，该加热构件22设置于第二腔体213内。实际应用中，该第一腔体211内可设置有坩埚，该加热构件22以及蒸镀材料可设置与该坩埚内，以加热形成蒸镀气体。从而使得位于该第二腔体213内的加热构件22加热蒸镀材料后形成蒸镀气体，该蒸镀气体经气体传输管道216后收容于第一腔体211中，再由喷射口2121喷射到基板B上沉积为薄膜。
继续参考图3，在一些实施方式中，为了进一步提升蒸镀气体在基板B上沉积时膜厚的均匀性，第一腔体211内可设置有若干个加热丝23，以分段控制第一腔体211在沿第一壁体212的弯曲方向上的温度。比如，在喷射口2121的宽度均匀时，由于蒸发气体更多地往基板B中心沉积，因此可以控制中间的加热丝23的温度低于两端加热丝的温度。
由上可知，本发明实施例提供的蒸发源装置，包括本体以及加热构件；加热构件用于加热蒸镀材料形成蒸镀气体，本体设置有用于收容所述蒸镀气体的第一腔体，该本体包括第一壁体，第一壁体的外壁面呈向第一腔体内弯曲的曲面状；第一壁体上设有一呈缝隙状的喷射口并与第一腔体连通，该喷射口沿着第一壁体的弯曲方向弯曲分布，并将第一腔体内的蒸镀气体导出到外界。该方案通过弯曲型的缝隙状喷射口改变，使其更多地沉积到基板上，提高材料利用率，改善蒸镀阴影效应，并可缩短本体的长度，从而缩小设备规模、节约成本。同时，喷射口设计为缝隙状可降低堵孔风险，提高量产的稼动率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种蒸发源装置，其中，该蒸发源装置包括：
    本体以及加热构件；
    所述加热构件用于加热蒸镀材料形成蒸镀气体，所述本体设置有用于收容所述蒸镀气体的第一腔体；
    所述本体包括第一壁体，所述第一壁体的外壁面呈向所述第一腔体内弯曲的曲面状；
    所述第一壁体上设有一呈缝隙状的喷射口并与所述第一腔体连通，所述喷射口沿着所述第一壁体的弯曲方向弯曲分布，并将所述第一腔体内的蒸镀气体导出到外界。
  2. 如权利要求1所述的蒸发源装置，其中，所述呈缝隙状的喷射口的宽度由中间至两端逐渐变大。
  3. 如权利要求2所述的蒸发源装置，其中，所述加热结构用于控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度先增后减。
  4. 如权利要求1所述的蒸发源装置，其中，所述加热构件用于分段控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度。
  5. 如权利要求1所述的蒸发源装置，其中，所述第一壁体的内壁面呈向所述第一腔体内弯曲的曲面状。
  6. 如权利要求1所述的蒸发源装置，其中，所述加热构件设置于所述第一腔体内。
  7. 如权利要求1所述的蒸发源装置，其中，所述本体设置有第二腔体，所述本体包括第二壁体，所述第二壁体上设有与所述第二腔体连通的开口部；所述本体包括第三壁体，所述第三壁体设有与所述第一腔体连通的输入口；所述第二腔体通过所述开口部与所述输入口连通。
  8. 如权利要求7所述的蒸发源装置，其中，所述本体还包括气体传输管道，用于连通所述开口部与所述输入口。
  9. 如权利要求7所述的蒸发源装置，其中，所述加热构件设置于所述第二腔体内。
  10. 如权利要求9所述的蒸发源装置，其中，所述第一腔体内设置有若干个加热丝，以分段控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度。
  11. 一种蒸发源装置，其中，该蒸发源装置包括：
    本体以及加热构件；
    所述加热构件用于加热蒸镀材料形成蒸镀气体，所述本体设置有用于收容所述蒸镀气体的第一腔体；
    所述本体包括第一壁体，所述第一壁体的外壁面呈向所述第一腔体内弯曲的曲面状，所述加热构件分段控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度；
    所述第一壁体上设有一呈缝隙状的喷射口并与所述第一腔体连通，所述喷射口沿着所述第一壁体的弯曲方向弯曲分布，并将所述第一腔体内的蒸镀气体导出到外界，其中，所述呈缝隙状的喷射口的宽度由中间至两端逐渐变大。
  12. 如权利要求11所述的蒸发源装置，其中，所述加热结构用于控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度先增后减。
  13. 如权利要求11所述的蒸发源装置，其中，所述第一壁体的内壁面呈向所述第一腔体内弯曲的曲面状。
  14. 如权利要求11所述的蒸发源装置，其中，所述加热构件设置于所述第一腔体内。
  15. 如权利要求11所述的蒸发源装置，其中，所述本体设置有第二腔体，所述本体包括第二壁体，所述第二壁体上设有与所述第二腔体连通的开口部；所述本体包括第三壁体，所述第三壁体设有与所述第一腔体连通的输入口；所述第二腔体通过所述开口部与所述输入口连通。
  16. 如权利要求15所述的蒸发源装置，其中，所述本体还包括气体传输管道，用于连通所述开口部与所述输入口。
  17. 如权利要求15所述的蒸发源装置，其中，所述加热构件设置于所述第二腔体内。
  18. 如权利要求17所述的蒸发源装置，其中，所述第一腔体内设置有若干个加热丝，以分段控制所述第一腔体在沿所述第一壁体的弯曲方向上的温度。
  19. 如权利要求11所述的蒸发源装置，其中，第一腔体内设置有坩埚，该加热构件设置于该坩埚内。
  20. 如权利要求11所述的蒸发源装置，其中，该呈缝隙状的喷射口的长度与第一壁体的外壁面的长度相当。
PCT/CN2017/087787 2017-04-18 2017-06-09 一种蒸发源装置 Ceased WO2018192070A1 (zh)

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