WO2018189898A1 - Élément de réception de lumière à semi-conducteur - Google Patents
Élément de réception de lumière à semi-conducteur Download PDFInfo
- Publication number
- WO2018189898A1 WO2018189898A1 PCT/JP2017/015362 JP2017015362W WO2018189898A1 WO 2018189898 A1 WO2018189898 A1 WO 2018189898A1 JP 2017015362 W JP2017015362 W JP 2017015362W WO 2018189898 A1 WO2018189898 A1 WO 2018189898A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- buffer layer
- receiving element
- semiconductor light
- electron
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims description 13
- 230000031700 light absorption Effects 0.000 claims description 9
- 230000010748 Photoabsorption Effects 0.000 abstract 2
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002076 thermal analysis method Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Definitions
- the composition of the buffer layer 13 is controlled so as not to be sensitive to the wavelength of incident light. Specifically, the composition ratio of AlGaInAs is adjusted. Further, the material of the buffer layer 13 need not be limited to AlGaInAs.
- the buffer layer 13 can be made of a material having a band gap between the band gap of AlInAs and the band gap of InP. For example, a layer formed of a combination of arbitrary materials among Al, Ga, In, As, and P can be used as the buffer layer.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
L'invention comprend : un substrat InP comprenant de l'InP; une couche tampon disposée au-dessus du substrat InP, en contact ou non en contact avec le substrat InP; une couche de multiplicateur d'électrons disposée au-dessus de la couche tampon, en contact avec la couche tampon, et formée à partir d'un matériau contenant de l'Al; une couche de photoabsorption disposée au-dessus de la couche de multiplicateur d'électrons, absorbant la lumière pour générer une porteuse; et une couche de contact disposée au-dessus de la couche de photoabsorption. L'invention est caractérisée en ce que le matériau de la couche tampon est un cristal quaternaire ayant une composition d'Al inférieure à celle de la couche de multiplicateur d'électrons.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2017/015362 WO2018189898A1 (fr) | 2017-04-14 | 2017-04-14 | Élément de réception de lumière à semi-conducteur |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2017/015362 WO2018189898A1 (fr) | 2017-04-14 | 2017-04-14 | Élément de réception de lumière à semi-conducteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018189898A1 true WO2018189898A1 (fr) | 2018-10-18 |
Family
ID=63792504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2017/015362 WO2018189898A1 (fr) | 2017-04-14 | 2017-04-14 | Élément de réception de lumière à semi-conducteur |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2018189898A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020129648A1 (fr) * | 2018-12-19 | 2020-06-25 | 日本電信電話株式会社 | Photodiode à avalanche et son procédé de fabrication |
| WO2020195954A1 (fr) * | 2019-03-28 | 2020-10-01 | 日本電信電話株式会社 | Photodiode à avalanche et son procédé de fabrication |
| US20220199847A1 (en) * | 2019-03-12 | 2022-06-23 | Dephan Limited Liability Company (Dephan Llc) | Avalanche photodetector (variants) and method for manufacturing the same (variants) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0661521A (ja) * | 1992-08-06 | 1994-03-04 | Fujitsu Ltd | アバランシェホトダイオード |
| US20060202243A1 (en) * | 2005-03-11 | 2006-09-14 | The Boeing Company | Metamorphic avalanche photodetector |
| WO2007086528A1 (fr) * | 2006-01-30 | 2007-08-02 | Nec Corporation | Dispositif semi-conducteur récepteur de lumière |
| JP2010135360A (ja) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | アバランシェフォトダイオード |
| JP2012513110A (ja) * | 2008-12-18 | 2012-06-07 | アルカテル−ルーセント | アバランシェ・フォトダイオード |
-
2017
- 2017-04-14 WO PCT/JP2017/015362 patent/WO2018189898A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0661521A (ja) * | 1992-08-06 | 1994-03-04 | Fujitsu Ltd | アバランシェホトダイオード |
| US20060202243A1 (en) * | 2005-03-11 | 2006-09-14 | The Boeing Company | Metamorphic avalanche photodetector |
| WO2007086528A1 (fr) * | 2006-01-30 | 2007-08-02 | Nec Corporation | Dispositif semi-conducteur récepteur de lumière |
| JP2010135360A (ja) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | アバランシェフォトダイオード |
| JP2012513110A (ja) * | 2008-12-18 | 2012-06-07 | アルカテル−ルーセント | アバランシェ・フォトダイオード |
Non-Patent Citations (1)
| Title |
|---|
| LAHRICHI, M. ET AL.: "240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 22, no. 18, 15 September 2010 (2010-09-15), pages 1373 - 1375, XP011312911 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020129648A1 (fr) * | 2018-12-19 | 2020-06-25 | 日本電信電話株式会社 | Photodiode à avalanche et son procédé de fabrication |
| US20220199847A1 (en) * | 2019-03-12 | 2022-06-23 | Dephan Limited Liability Company (Dephan Llc) | Avalanche photodetector (variants) and method for manufacturing the same (variants) |
| US11749774B2 (en) * | 2019-03-12 | 2023-09-05 | Dephan Llc | Avalanche photodetector (variants) and method for manufacturing the same (variants) |
| WO2020195954A1 (fr) * | 2019-03-28 | 2020-10-01 | 日本電信電話株式会社 | Photodiode à avalanche et son procédé de fabrication |
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