JPS63955B2 - - Google Patents
Info
- Publication number
- JPS63955B2 JPS63955B2 JP54157692A JP15769279A JPS63955B2 JP S63955 B2 JPS63955 B2 JP S63955B2 JP 54157692 A JP54157692 A JP 54157692A JP 15769279 A JP15769279 A JP 15769279A JP S63955 B2 JPS63955 B2 JP S63955B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- semiconductor
- type
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 241001156002 Anthonomus pomorum Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15769279A JPS5680179A (en) | 1979-12-05 | 1979-12-05 | Planar type hetero-junction light detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15769279A JPS5680179A (en) | 1979-12-05 | 1979-12-05 | Planar type hetero-junction light detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5680179A JPS5680179A (en) | 1981-07-01 |
| JPS63955B2 true JPS63955B2 (fr) | 1988-01-09 |
Family
ID=15655289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15769279A Granted JPS5680179A (en) | 1979-12-05 | 1979-12-05 | Planar type hetero-junction light detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5680179A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011109146A (ja) * | 2011-03-01 | 2011-06-02 | Sumitomo Electric Ind Ltd | Ｉｉｉ−ｖ族化合物半導体受光素子 |
| US8866199B2 (en) | 2009-09-07 | 2014-10-21 | Sumitomo Electric Industries, Ltd. | Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer |
| JP2015043466A (ja) * | 2014-12-01 | 2015-03-05 | 住友電気工業株式会社 | Ｉｉｉ−ｖ族化合物半導体受光素子 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56167373A (en) * | 1980-05-27 | 1981-12-23 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light sensor |
| JPS5723490A (en) * | 1980-07-15 | 1982-02-06 | Matsushita Electric Works Ltd | Electric equipment with heater |
| DE3135462A1 (de) * | 1981-09-08 | 1983-09-01 | AEG-Telefunken Nachrichtentechnik GmbH, 7150 Backnang | Monolithische eingangsstufe eines optischen empfaengers |
| JPS6285832A (ja) * | 1985-10-11 | 1987-04-20 | Mitsubishi Cable Ind Ltd | 光学式温度計 |
| US5179430A (en) * | 1988-05-24 | 1993-01-12 | Nec Corporation | Planar type heterojunction avalanche photodiode |
| US5148251A (en) * | 1991-11-25 | 1992-09-15 | The United States Of America As Represented By The Secretary Of The Army | Photoconductive avalanche GaAs switch |
| US5343054A (en) * | 1992-09-14 | 1994-08-30 | Kabushiki Kaisha Toshiba | Semiconductor light-detection device with recombination rates |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5441091A (en) * | 1977-09-08 | 1979-03-31 | Matsushita Electronics Corp | Semiconductor photoelectric transducer |
-
1979
- 1979-12-05 JP JP15769279A patent/JPS5680179A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5441091A (en) * | 1977-09-08 | 1979-03-31 | Matsushita Electronics Corp | Semiconductor photoelectric transducer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8866199B2 (en) | 2009-09-07 | 2014-10-21 | Sumitomo Electric Industries, Ltd. | Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer |
| US9159853B2 (en) | 2009-09-07 | 2015-10-13 | Sumitomo Electric Industries, Ltd. | Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer |
| JP2011109146A (ja) * | 2011-03-01 | 2011-06-02 | Sumitomo Electric Ind Ltd | Ｉｉｉ−ｖ族化合物半導体受光素子 |
| JP2015043466A (ja) * | 2014-12-01 | 2015-03-05 | 住友電気工業株式会社 | Ｉｉｉ−ｖ族化合物半導体受光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5680179A (en) | 1981-07-01 |
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