WO2018188151A1 - Led灯源及其制造方法、背光模组 - Google Patents

Led灯源及其制造方法、背光模组 Download PDF

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Publication number
WO2018188151A1
WO2018188151A1 PCT/CN2017/084691 CN2017084691W WO2018188151A1 WO 2018188151 A1 WO2018188151 A1 WO 2018188151A1 CN 2017084691 W CN2017084691 W CN 2017084691W WO 2018188151 A1 WO2018188151 A1 WO 2018188151A1
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WIPO (PCT)
Prior art keywords
substrate
reflecting layer
white light
led
light reflecting
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Ceased
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PCT/CN2017/084691
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English (en)
French (fr)
Inventor
樊勇
萧宇均
张简圣哲
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/529,951 priority Critical patent/US10424700B2/en
Publication of WO2018188151A1 publication Critical patent/WO2018188151A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Definitions

  • the present invention relates to the field of display, and in particular to an LED (Light Emitting Diode, Light-emitting diode) light source, manufacturing method thereof, and backlight module.
  • LED Light Emitting Diode, Light-emitting diode
  • Four side emission type LED is a kind of flip chip (Flip)
  • a light source composed of a fluorescent paste (phosphor colloid layer) and a white light reflecting layer is coated on the chip.
  • the LED light source forms a rectangular light-emitting surface in the illuminated area on the diffusion plate, which not only has the advantages of small size, high driving power, but also can achieve good local dimming (local Dimming) effect, thereby improving HDR (High-Dynamic Range, High dynamic lighting rendering) display quality.
  • the light color consistency of the four-sided illumination of the existing LED light source is poor, and the input Bin rate (ie, the light adoption rate) of the LED is low, resulting in high backlight cost based on the LED light source.
  • the present invention provides an LED lamp source, a manufacturing method thereof, and a backlight module, which can improve the color consistency of the four-sided illumination, improve the Bin rate of the LED, and reduce the backlight cost.
  • An LED light source includes a substrate and an LED chip fixed on the substrate, a fluorescent glue and a white light reflecting layer, the fluorescent glue encapsulates the LED chip on the substrate, and the white light reflecting layer is used for the opposite direction.
  • the light emitted by the fluorescent gel to the white light reflecting layer is reflected, and the orthographic projection of the fluorescent glue on the substrate is located within the orthographic projection of the white light reflecting layer on the substrate.
  • the LED light source of the backlight module comprises a substrate, an LED chip fixed on the substrate, a fluorescent glue and a white light reflecting layer, and the fluorescent glue encapsulates the LED chip on the substrate.
  • the white light reflecting layer is for reflecting light emitted from the fluorescent gel to the white light reflecting layer, and the orthographic projection of the fluorescent glue on the substrate is located within the orthographic projection of the white light reflecting layer on the substrate.
  • a plurality of LED chips arranged in the array are expanded and fixed to have a predetermined interval between any two adjacent LED chips and fixed on the substrate;
  • the white light reflecting layer is cut along a cutting line between two adjacent LED units, and the orthographic projection of the fluorescent glue on the substrate after the cutting is located within the orthographic projection of the white light reflecting layer on the substrate.
  • the orthographic projection of the fluorescent glue on the substrate is located in the orthographic projection of the white light reflecting layer on the substrate, that is, the area of the white light reflecting layer is larger than the area of the fluorescent glue, so that the white light reflecting layer can reflect four faces.
  • the emitted light is equivalent to an increase in the light reflection area, thereby improving the color consistency of the four-sided illumination, increasing the Bin rate of the LED, and reducing the backlight cost.
  • FIG. 1 is a schematic structural view of an LED light source according to an embodiment of the present invention.
  • FIG. 2 is a schematic front view of a fluorescent glue and a white light reflecting layer of the LED light source shown in FIG. 1;
  • FIG. 3 is a schematic flow chart of a method of manufacturing an LED light source according to an embodiment of the present invention.
  • FIG. 4 is a schematic view of manufacturing an LED light source based on the method shown in FIG. 3;
  • FIG. 5 is a schematic flow chart of a method for manufacturing an LED light source according to another embodiment of the present invention.
  • Figure 6 is a schematic view showing the manufacture of an LED light source based on the method shown in Figure 5;
  • FIG. 7 is a cross-sectional view showing the structure of a backlight module according to an embodiment of the present invention.
  • FIG. 1 is an LED light source according to an embodiment of the invention.
  • the LED light source 10 includes a substrate 11 and an LED chip 12, a fluorescent paste 13 and a white light reflecting layer 14 fixed on the substrate 11.
  • the substrate 11 may be sapphire.
  • the LED chip 12 is a flip chip provided with a metal electrode 121 which is electrically connected by the metal electrode 121 and emits blue light.
  • the fluorescent glue 13 encapsulates the LED chip 12 on the substrate 11, and the fluorescent glue 13 has a rectangular body structure as a whole, so that the LED light source 10 after packaging is a rectangular body structure.
  • the fluorescent glue 13 is an encapsulant doped with a uniformly distributed phosphor, and the yellow light emitted by the phosphor can complement the blue light emitted by the LED chip 12 to form white light.
  • the white light reflecting layer 14 is formed on the side of the fluorescent paste 13 facing away from the LED chip 12, and is used to reflect light emitted from the fluorescent paste 13 to the white light reflecting layer 14.
  • the white light reflecting layer 14 is located on the upper light emitting surface of the LED light source 10, white light can only be emitted from the four side faces of the LED light source 10.
  • the orthographic projection of the fluorescent glue 13 on the substrate 11 is located within the orthographic projection of the white light reflecting layer 14 on the substrate 11 (the plane in which it is located), that is, The area of the white light reflecting layer 14 is larger than the area of the fluorescent glue 13.
  • the orthographic projection of the fluorescent glue 13 on the substrate 11 may be located in the middle of the orthographic projection of the white light reflecting layer 14 on the substrate 11.
  • the white light after the white light is emitted from the fluorescent glue 13, it is emitted from the four sides of the LED light source 10 of the rectangular body, and the white light reflecting layer 14 outside the orthographic projection of the fluorescent glue 13 reflects the white light.
  • the white light is reflected to reach the diffusion plate disposed adjacent to the substrate 11, and exits after passing through the diffusion plate.
  • the white light reflecting layer 14 of the present embodiment can reflect the light emitted from the four side faces of the LED light source 10, which is equivalent to increasing the light reflecting area, thereby improving the color consistency of the four-sided light emitting and improving the Binding rate of the LED.
  • This embodiment can reduce the number of LED light sources 10, thereby reducing backlight costs, when implementing the same backlight as is currently required.
  • the white light reflecting layer 14 may be a retroreflective sheeting disposed on the fluorescent glue 13.
  • other embodiments of the present invention may also be an encapsulant formed on the fluorescent gel 13, as long as the encapsulant is adjacent to the surface of the fluorescent gel 13 to reflect white light.
  • the surface of the white light reflecting layer 14 adjacent to the fluorescent glue 13 may be a smooth surface.
  • the surface of the phosphor sheet adjacent to the phosphor 13 is mirror-finished, and the surface of the encapsulant adjacent to the phosphor 13 may be polished to a smooth surface.
  • FIG. 3 and FIG. 4 illustrate a method of manufacturing an LED light source according to an embodiment of the present invention.
  • the method may include the following steps S31 to S38.
  • S32 A plurality of LED chips 42 arranged in an array are formed on the substrate 41.
  • S33 A plurality of LED chips 42 arranged in the array are expanded and fixed, so that any two adjacent LED chips 42 have a predetermined interval and are fixed on the substrate 41.
  • the crystal expansion process can set two adjacent LED chips 42.
  • the spacer, the die bonding process can fix the LED chips 42 to the substrate 41 at predetermined intervals.
  • the fluorescent glue 43 covering the LED chip 42 can be formed by coating and curing.
  • other embodiments may also dilute the fluorescent glue with toluene or xylene to form a formulated fluorescent solution, and then spray the fluorescent solution onto the crystallized LED chip 42 by an atomizing powder spraying device under the action of airflow and gravity.
  • the benzene or xylene ene is rapidly volatilized, and the remaining fluorescent rubber particles are uniformly adsorbed on the surface of the LED chip 42 and baked at a high temperature, for example, baking at 80 to 120 ° C for 1 to 2 hours, and solidified.
  • S35 The fluorescent glue 43 and the substrate 41 are cut along a cutting line between two adjacent LED chips 42 to form a plurality of LED units 44 that are independent of each other.
  • the cutting line may be the central axis of two adjacent LED chips 42.
  • S36 The plurality of LED units 44 are arranged on the same plane at intervals.
  • a white light reflecting layer 45 is formed on a side of the fluorescent rubber 43 of the plurality of LED units 44 arranged at intervals toward the LED chip 42.
  • the cutting line may be the central axis of two adjacent LED units 44.
  • FIG. 5 and FIG. 6 illustrate a method of fabricating an LED light source according to another embodiment of the present invention.
  • the method may include the following steps S51 to S60.
  • a substrate 61 is provided.
  • S52 A plurality of LED chips 62 arranged in an array are formed on the substrate 61.
  • S53 A plurality of LED chips 62 arranged in the array are expanded and fixed, so that any two adjacent LED chips 62 have a predetermined interval and are fixed on the substrate 61.
  • S54 Forming a fluorescent paste 63 covering the LED chip 62 that has undergone the expansion and the crystal bonding on the substrate 61.
  • the fluorescent glue 63 and the substrate 61 are cut along a cutting line between two adjacent LED chips 62 to form a plurality of LED units 64 independent of each other.
  • S56 The plurality of LED units 64 are arranged on the same plane at intervals.
  • a substrate 65 is provided.
  • a white light reflecting layer 66 is formed on the substrate 65.
  • a layer of encapsulant is first formed on the substrate 65, and then the encapsulant is cured to form a white light reflecting layer 66.
  • the white light reflecting layer 66 is separated from the substrate 65, and the white light reflecting layer 66 is attached to the side of the fluorescent glue 63 of the plurality of LED units 64 arranged to face away from the LED chip 62.
  • the embodiment can mirror the side of the white light reflecting layer 66 facing away from the substrate 65 to improve the reflective capability of the side to white light. Then, the mirror-finished side of the white light reflecting layer 65 is attached to the side of the fluorescent paste 63 facing away from the LED chip 62.
  • the white light reflecting layer 66 of the present embodiment is formed separately on a flat substrate 65, which is easy to achieve better thickness uniformity and is easy to
  • the white light reflecting layer 66 is ground adjacent to one side of the fluorescent paste 63 to appear as a smooth surface.
  • embodiments of the present invention may also directly attach a white light reflecting sheet to the side of the fluorescent glue 63 facing away from the LED chip 62, thereby forming a white light reflecting layer 66.
  • the method of the embodiment shown in Figures 3 and 5 can produce the LED light source 10 of the same construction as that shown in Figure 1, and thus has the same advantageous effects.
  • the backlight module 70 is a side-in type backlight module, and includes a back frame 71, a light guide plate 72, a backlight 73, and a plastic frame 74.
  • the back frame 71 includes a bearing portion and a bent portion perpendicular to the carrying portion, and the carrying portion is configured to carry the light guide plate 72.
  • the side surface of the light guide plate 72 is a light incident surface and is perpendicular to the light exit surface, and the light incident surface of the light guide plate 72 is disposed adjacent to the bent portion of the back frame 71.
  • the backlight 73 is disposed on a side of the bent portion adjacent to the light incident surface of the light guide plate 72.
  • the plastic frame 74 includes a body portion and an extension portion perpendicular to the body portion. The body portion is for carrying the liquid crystal display panel, and the extension portion is relatively fixed to the bent portion of the back frame 71.
  • the backlight source 73 adopts the LED light source 10 of the embodiment of FIG. 1. Since the LED light source 10 can improve the color consistency of the four-sided illumination and increase the Bin rate of the LED, the embodiment provides the same as the existing requirements. In the backlight, the backlight module 70 can increase the distance between the individual LED light sources 10, thereby reducing the number of backlights 73 and reducing the backlight cost.
  • the LED light source 10 having the foregoing design can also be applied to the direct type backlight module, that is, the LED light source 10 is located between the back frame 71 and the bottom surface of the light guide plate 72, and the bottom surface of the light guide plate 72 is the light incident surface. And is arranged at a distance from the light-emitting surface.
  • LED light source 10 can also be applied to backlight modules of other structures, and the embodiment shown in FIG. 7 is for illustrative purposes only.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一种LED灯源（10）及其制造方法、背光模组。LED灯源（10）包括衬底（11）以及固定于衬底（11）上的LED芯片（12）、荧光胶（13）和白光反射层（14），荧光胶（13）将LED芯片（12）包覆封装于衬底（11）上，白光反射层(14)用于对荧光胶(13)出射至白光反射层(14)的光进行反射，荧光胶(13)在衬底（11）上的正投影位于白光反射层(14)在衬底（11）上的正投影之内。

Description

LED灯源及其制造方法、背光模组
【技术领域】
本发明涉及显示领域，具体涉及一种LED（Light Emitting Diode, 发光二极管）灯源及其制造方法、背光模组。
【背景技术】
四面发光（Four side emission）型LED是一种在倒装芯片（Flip Chip）上涂布荧光胶（荧光粉胶体层）和白光反射层所构成的灯源。该LED灯源在扩散板上的照亮区域形成矩形发光面，不仅具有尺寸小、驱动功率高等优点，而且可以实现良好的局域调光（local dimming）效果，从而提升HDR（High-Dynamic Range, 高动态光照渲染）的显示品质。但是，现有LED灯源的四面发光的光色一致性较差，LED的入Bin率（即光采纳率）较低，导致基于该LED灯源的背光成本居高不下。
【发明内容】
鉴于此，本发明提供一种LED灯源及其制造方法、背光模组，能够改善四面发光的光色一致性，提升LED的入Bin率，降低背光成本。
本发明一实施例的LED灯源，包括衬底以及固定于衬底上的LED芯片、荧光胶和白光反射层，荧光胶将LED芯片包覆封装于衬底上，白光反射层用于对从荧光胶出射至白光反射层的光进行反射，荧光胶在衬底上的正投影位于白光反射层在衬底上的正投影之内。
本发明一实施例的背光模组，该背光模组的LED灯源包括衬底以及固定于衬底上的LED芯片、荧光胶和白光反射层，荧光胶将LED芯片包覆封装于衬底上，白光反射层用于对从荧光胶出射至白光反射层的光进行反射，荧光胶在衬底上的正投影位于白光反射层在衬底上的正投影之内。
本发明一实施例的LED灯源的制造方法，包括：
提供一衬底；
在衬底上形成阵列排布的多个LED芯片；
对阵列排布的多个LED芯片进行扩晶和固晶，使得任意相邻两个LED芯片之间具有预定间隔并固定于衬底上；
在衬底上形成包覆经过扩晶和固晶的LED芯片的荧光胶；
沿相邻两个LED芯片之间的切割线对荧光胶及衬底进行切割，以形成相互独立的多个LED单元；
将多个LED单元间隔排布于同一平面上；
在间隔排布的多个LED单元的荧光胶背向LED芯片的一侧形成白光反射层；
沿相邻两个LED单元之间的切割线对白光反射层进行切割，切割后荧光胶在衬底上的正投影位于白光反射层在衬底上的正投影之内。
有益效果：本发明设计荧光胶在衬底上的正投影位于白光反射层在衬底上的正投影之内，即白光反射层的面积大于荧光胶的面积，使得白光反射层可以反射四个面出射的光，相当于增大了光反射面积，从而能够改善四面发光的光色一致性，提升LED的入Bin率，降低背光成本。
【附图说明】
图1是本发明一实施例的LED灯源的结构示意图；
图2是图1所示LED灯源的荧光胶和白光反射层的正投影示意图；
图3是本发明一实施例的LED灯源的制造方法的流程示意图；
图4是基于图3所示方法制造LED灯源的示意图；
图5是本发明另一实施例的LED灯源的制造方法的流程示意图；
图6是基于图5所示方法制造LED灯源的示意图；
图7是本发明一实施例的背光模组的结构剖视图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明所提供的各个示例性的实施例的技术方案进行清楚、完整地描述。在不冲突的情况下，下述各个实施例及其技术特征可以相互组合。
请参阅图1，为本发明一实施例的LED灯源。所述LED灯源10包括衬底11以及固定于衬底11上的LED芯片12、荧光胶13和白光反射层14。衬底11可以为蓝宝石。LED芯片12为设置有金属电极121的倒装芯片，其通过金属电极121接电并发出蓝光。荧光胶13将LED芯片12包覆封装于衬底11上，荧光胶13整体为矩形体结构，使得封装后LED灯源10为矩形体结构。荧光胶13是一种掺杂有均匀分布荧光粉的封装胶，荧光粉发出的黄光可以与LED芯片12发出的蓝光互补形成白光。白光反射层14形成于荧光胶13背向LED芯片12的一侧，并用于对从荧光胶13出射至白光反射层14的光进行反射。
由于白光反射层14位于LED灯源10的上发光面，因此白光只能从LED灯源10的四个侧面出射。
与现有技术不同的是，结合图2所示，荧光胶13在衬底11（所在平面）上的正投影位于白光反射层14在衬底11（所在平面）上的正投影之内，即，白光反射层14的面积大于荧光胶13的面积。其中，荧光胶13在衬底11上的正投影可以位于白光反射层14在衬底11上的正投影的中间。
结合图1和图2所示，白光从荧光胶13出射之后，从矩形体的LED灯源10的四个侧面出射，位于荧光胶13的正投影之外的白光反射层14对白光进行反射，白光经过反射后到达邻近于衬底11设置的扩散板，并经过扩散板之后出射。
可知，本实施例的白光反射层14可以反射LED灯源10的四个侧面出射的光，相当于增大了光反射面积，从而能够改善四面发光的光色一致性，提升LED的入Bin率，在实现与现有所需相同的背光时，本实施例可以减少LED灯源10的数目，从而降低背光成本。
鉴于上述白光反射层14的作用，在本发明一实施例中，白光反射层14可以为设置于荧光胶13上的反光片。当然，本发明其他实施例也可以为形成于荧光胶13上的封装胶，只要该封装胶邻近荧光胶13的表面能够反射白光即可。
为了进一步提升LED的入Bin率以及改善四面发光的光色一致性，白光反射层14邻近荧光胶13的表面可以为光滑表面。例如，上述反光片邻近荧光胶13的表面经过镜面处理，上述封装胶邻近荧光胶13的表面经过研磨处理后也可以表现为光滑表面。
请参阅图3和图4，为本发明一实施例LED灯源的制造方法。所述方法可以包括如下步骤S31~S38。
S31：提供一衬底41。
S32：在衬底41上形成阵列排布的多个LED芯片42。
S33：对阵列排布的多个LED芯片42进行扩晶和固晶，使得任意相邻两个LED芯片42之间具有预定间隔并固定于衬底41上。
结合图4所示，扩晶工艺可以设定相邻两个LED芯片42 的间隔，固晶工艺可以将LED芯片42以预定间隔固定于衬底41上。
S34：在衬底41上形成包覆经过扩晶和固晶的LED芯片42的荧光胶43。
本实施例可以采用涂布及固化方式形成包覆LED芯片42的荧光胶43。当然，其他实施例也可以将荧光胶用甲苯或二甲苯烯稀释形成调配的荧光溶液，而后采用雾化喷粉设备将荧光溶液喷涂至经过固晶的LED芯片42上，在气流和重力作用下，苯或二甲苯烯会快速挥发，剩余的荧光胶微粒会均匀的吸附于LED芯片42的表面，经过高温烘烤，例如在80~120℃下烘烤1~2小时，固化成型。
S35：沿相邻两个LED芯片42之间的切割线对荧光胶43及衬底41进行切割，以形成相互独立的多个LED单元44。
所述切割线可以为相邻两个LED芯片42的中轴线。
S36：将多个LED单元44间隔排布于同一平面上。
S37：在间隔排布的多个LED单元44的荧光胶43背向LED芯片42的一侧形成白光反射层45。
S38：沿相邻两个LED单元44之间的切割线对白光反射层45进行切割，切割后荧光胶43在衬底41上的正投影位于白光反射层45在衬底41上的正投影之内。
所述切割线可以为相邻两个LED单元44的中轴线。
请参阅图5和图6，为本发明另一实施例LED灯源的制造方法。所述方法可以包括如下步骤S51~S60。
S51：提供一衬底61。
S52：在衬底61上形成阵列排布的多个LED芯片62。
S53：对阵列排布的多个LED芯片62进行扩晶和固晶，使得任意相邻两个LED芯片62之间具有预定间隔并固定于衬底61上。
S54：在衬底61上形成包覆经过扩晶和固晶的LED芯片62的荧光胶63。
S55：沿相邻两个LED芯片62之间的切割线对荧光胶63及衬底61进行切割，以形成相互独立的多个LED单元64。
S56：将多个LED单元64间隔排布于同一平面上。
S57：提供一基板65。
S58：在基板65上形成白光反射层66。
其中，本实施例可以首先在基板65上形成一层封装胶，然后对所述封装胶进行固化处理，从而形成白光反射层66。
S59：将白光反射层66自基板65上分离，并将白光反射层66贴附于间隔排布的多个LED单元64的荧光胶63背向LED芯片62的一侧。
其中，在将白光反射层66自基板65上分离之前，本实施例可以对白光反射层66背向基板65的侧面进行镜面处理，以提高该侧面对白光的反射能力。而后，将所述白光反射层65的经过镜面处理的侧面贴附于荧光胶63背向LED芯片62的一侧。
S60：沿相邻两个LED芯片62之间的切割线对白光反射层66进行切割，切割后荧光胶63在衬底61上的正投影位于白光反射层66在衬底61上的正投影之内。
在图3所示实施例的描述基础上，但与其不同的是，本实施例的白光反射层66是单独在一平整的基板65上制得，容易实现更好的厚度一致性，并且容易对白光反射层66邻近荧光胶63的一侧进行研磨处理，以表现为光滑表面。
当然，本发明其他实施例也可以直接在荧光胶63背向LED芯片62的一侧贴附白光反光片，从而形成白光反射层66。
图3和图5所示实施例的方法均可制得与图1所示相同结构的LED灯源10，因此具有与其相同的有益效果。
请参阅图7，为本发明一实施例背光模组。所述背光模组70为侧入式背光模组，包括背框71、导光板72、背光源73及胶框74。背框71包括承载部以及与承载部相垂直的弯折部，承载部用于承载导光板72。导光板72的侧面为入光面，且与出光面相垂直，导光板72的入光面与背框71的弯折部相邻设置。背光源73设置于弯折部的邻近导光板72的入光面一侧。胶框74包括本体部以及与本体部相垂直的延伸部，本体部用于承载液晶显示面板，延伸部与背框71的弯折部相对固定。
其中，背光源73采用图1实施例的LED灯源10，由于LED灯源10能够改善四面发光的光色一致性，提升LED的入Bin率，因此本实施例在提供与现有所需相同的背光时，背光模组70可以增大各个LED灯源10之间的距离，从而减少背光源73的数目，降低背光成本。
当然，具有前述设计的LED灯源10还可以适用于直下式背光模组，即，LED灯源10位于背框71和导光板72的底面之间，此时导光板72的底面为入光面，且与出光面相对间隔设置。
需要说明的是，上述LED灯源10还可以适用于其他结构的背光模组，图7所示实施例仅供说明举例。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (11)

  1. 一种LED灯源，其中，所述LED灯源包括衬底以及固定于所述衬底上的LED芯片、荧光胶和白光反射层，所述荧光胶将所述LED芯片包覆封装于所述衬底上，所述白光反射层用于对从所述荧光胶出射至所述白光反射层的光进行反射，所述荧光胶在所述衬底上的正投影位于所述白光反射层在所述衬底上的正投影之内。
  2. 根据权利要求1所述的LED灯源，其中，所述白光反射层包括设置于所述荧光胶上的反光片或者封装胶。
  3. 一种背光模组，其中，所述背光模组包括LED灯源，所述LED灯源包括衬底以及固定于所述衬底上的LED芯片、荧光胶和白光反射层，所述荧光胶将所述LED芯片包覆封装于所述衬底上，所述白光反射层用于对从所述荧光胶出射至所述白光反射层的光进行反射，所述荧光胶在所述衬底上的正投影位于所述白光反射层在所述衬底上的正投影之内。
  4. 根据权利要求3所述的背光模组，其中，所述白光反射层包括设置于所述荧光胶上的反光片或者封装胶。
  5. 根据权利要求3所述的背光模组，其中，所述背光模组还包括导光板，所述导光板包括入光面以及与所述入光面相对间隔设置的出光面，所述LED灯源邻近所述入光面设置。
  6. 根据权利要求3所述的背光模组，其中，所述背光模组还包括导光板，所述导光板包括入光面以及与所述入光面相连的出光面，所述LED灯源邻近所述入光面设置。
  7. 一种LED灯源的制造方法，其中，所述方法包括：
    提供一衬底；
    在所述衬底上形成阵列排布的多个LED芯片；
    对所述阵列排布的多个LED芯片进行扩晶和固晶，使得任意相邻两个LED芯片之间具有预定间隔并固定于所述衬底上；
    在所述衬底上形成包覆经过扩晶和固晶的LED芯片的荧光胶；
    沿相邻两个LED芯片之间的切割线对所述荧光胶及衬底进行切割，以形成相互独立的多个LED单元；
    将所述多个LED单元间隔排布于同一平面上；
    在间隔排布的多个LED单元的荧光胶背向所述LED芯片的一侧形成白光反射层；
    沿相邻两个LED单元之间的切割线对所述白光反射层进行切割，切割后所述荧光胶在所述衬底上的正投影位于所述白光反射层在所述衬底上的正投影之内。
  8. 根据权利要求7所述的方法，其中，在间隔排布的多个LED单元的荧光胶背向所述LED芯片的一侧形成白光反射层，包括：
    提供一基板；
    在所述基板上形成白光反射层；
    将所述白光反射层自所述基板上分离，并将所述白光反射层贴附于所述荧光胶背向LED芯片的一侧。
  9. 根据权利要求8所述的方法，其中，在所述基板上形成白光反射层，包括：
    在所述基板上形成一层封装胶；
    对所述封装胶进行固化处理，以形成白光反射层。
  10. 根据权利要求8所述的方法，其中，
    在将所述白光反射层自所述基板上分离之前，所述方法还包括：
    对所述白光反射层背向所述基板的侧面进行镜面处理；
    将所述白光反射层贴附于所述荧光胶背向LED芯片的一侧，包括：
    将所述白光反射层的经过镜面处理的侧面贴附于所述荧光胶背向所述LED芯片的一侧。
  11. 根据权利要求7所述的方法，其中，在所述荧光胶背向所述LED芯片的一侧形成白光反射层，包括：
    在所述荧光胶背向所述LED芯片的一侧贴附白光反光片。
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CN106932951B (zh) 2018-11-23

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