WO2018152939A1 - 发光二极管 - Google Patents

发光二极管 Download PDF

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Publication number
WO2018152939A1
WO2018152939A1 PCT/CN2017/079908 CN2017079908W WO2018152939A1 WO 2018152939 A1 WO2018152939 A1 WO 2018152939A1 CN 2017079908 W CN2017079908 W CN 2017079908W WO 2018152939 A1 WO2018152939 A1 WO 2018152939A1
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light emitting
transport layer
layer
emitting diode
electrode
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French (fr)
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程艳
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/529,511 priority Critical patent/US10381518B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a light emitting diode.
  • a Light Emitting Diode is a semiconductor device that converts current into light.
  • the wavelength of the light emitted by the light emitting diode varies based on the semiconductor material used, more specifically based on the bandgap of the semiconductor material used. LEDs are commonly used as light sources for displays, vehicles, and other lighting applications.
  • the heat generated by the LED directly affects the illuminating performance and lifetime of the LED module, and further affects the life of the backlight of the mobile phone display or the television display. If the heat generated by the LED remains in the LED for a long time, dislocation and mismatch of the crystal structure constituting the LED will shorten the service life of the LED.
  • the existing LED structure generally includes a vertical structure and a non-vertical structure (planar structure), wherein the n-electrode and the p-electrode in the non-vertical-type light-emitting diode are located on the same side of the light-emitting layer, and the vertical structure of the light-emitting structure
  • the n-electrode and the p-electrode in the tube are located on the upper and lower sides of the luminescent layer, respectively. Due to the limitation of the performance of the electron-transporting layer, the current flowing between the n-electrode and the electron-transporting layer cannot flow into the illuminating well.
  • the layer affects the luminous efficiency of the light-emitting diode, and the electron transport layer does not dissipate the heat well, resulting in an excessive temperature of the light-emitting layer, especially in the non-vertical structure of the light-emitting diode due to the sapphire substrate on the side of the hole transport layer
  • the thermal conductivity is very poor, and it is more necessary to dissipate heat from the electron transport layer in the heat dissipation. Therefore, the improvement of the performance of the electron transport layer has an important influence on the light-emitting performance and the service life of the light-emitting diode.
  • Graphene is a two-dimensional crystal composed of carbon atoms arranged in a honeycomb shape. It has high transmittance, high thermal conductivity, high electron mobility, low resistivity, etc. Excellent performance makes graphene and related devices become physical. A research hotspot in the fields of chemistry, biology, and materials science. To date, a variety of devices have been prepared with graphene as a basic functional unit, including field effect transistors, solar cells, nanogenerators, and sensors.
  • the present invention provides a light emitting diode comprising: a light emitting layer, an electron transport layer and a hole transport layer respectively contacting the upper and lower sides of the light emitting layer, and a first contact with the hole transport layer And an electrode and a second electrode in contact with the electron transport layer; the material of the electron transport layer is graphene.
  • the light emitting diode adopts a non-vertical structure
  • the first electrode and the light emitting layer are spaced apart from each other on the hole transport layer, the electron transport layer is disposed on the light emitting layer, and the second electrode is disposed on the electron transport layer.
  • the light emitting diode adopts a vertical structure, and the first electrode, the hole transport layer, the light emitting layer, the electron transport layer, and the second electrode are stacked in this order from bottom to top.
  • the materials of the first electrode and the second electrode are each a combination of one or two of aluminum and copper.
  • the material of the hole transport layer is N-doped gallium nitride.
  • the buffer layer covers the substrate, and the hole transport layer is disposed on the buffer layer.
  • the substrate is a sapphire substrate.
  • the material of the buffer layer is undoped gallium nitride.
  • the present invention also provides a light emitting diode comprising: a light emitting layer, an electron transport layer and a hole transport layer respectively contacting the upper and lower sides of the light emitting layer, a first electrode in contact with the hole transport layer, and the a second electrode contacting the electron transport layer; the material of the electron transport layer is graphene;
  • the material of the first electrode and the second electrode is a combination of one or two of aluminum and copper;
  • the material of the hole transport layer is N-doped gallium nitride.
  • the present invention provides a light emitting diode comprising: a light emitting layer, an electron transport layer and a hole transport layer respectively contacting the upper and lower sides of the light emitting layer, and a first contact with the hole transport layer An electrode and a second electrode in contact with the electron transport layer, wherein the material of the electron transport layer is graphene, and the heat transfer capability of the electron transport layer of the light emitting diode is increased by utilizing excellent electrical conductivity and thermal conductivity of the graphene material Capabilities and electronic transmission capabilities, which in turn increase the life and luminous efficiency of LEDs.
  • FIG. 1 is a schematic view of a first embodiment of a light emitting diode of the present invention
  • FIG. 2 is a schematic view of a second embodiment of a light emitting diode of the present invention.
  • the present invention provides a light emitting diode comprising: a light emitting layer 5, an electron transport layer 6 and a hole transport layer 3 respectively contacting the upper and lower sides of the light emitting layer 5, and the empty
  • the first electrode 4 contacting the hole transport layer 3 and the second electrode 7 in contact with the electron transport layer 6; the material of the electron transport layer 6 is graphene.
  • the first electrode 4 and the second electrode 7 are respectively an n-electrode and a p-electrode of a light-emitting diode, and preferably a material is a combination of one or two of aluminum and copper, of course, the first electrode 4 and the first The two electrodes are not limited thereto and may be other suitable materials.
  • the material of the hole transport layer 3 is N-doped gallium nitride, and of course the material of the hole transport layer 3 is not limited thereto as other suitable materials.
  • the electron-transporting layer 6 is made of a graphene material in the light-emitting diode of the present invention, and the heat accumulated in the light-emitting layer 5 can be quickly and horizontally dissipated by using the excellent thermal conductivity of the graphene material, and slowly diffused longitudinally upward.
  • the heat dissipation effect of the light emitting diode is improved, the service life of the light emitting element is increased, and the electrical conductivity of the electron transport layer 6 is further improved by using the excellent electrical conductivity of the graphene material, thereby improving the luminous efficiency of the light emitting diode.
  • the light emitting diode of the present invention may be a vertical structure or a non-vertical structure.
  • the first electrode 4 and the light emitting layer 5 are spaced apart from each other on the hole transport layer 3, and the electron transport layer 6 is disposed.
  • the second electrode 7 is disposed on the electron transport layer 6 on the light emitting layer 5.
  • the light emitting diode of the non-vertical structure further includes a substrate 1 and a buffer layer 2, wherein the buffer layer 2 covers the substrate 1, and the hole transport layer 3 is disposed on the buffer layer. 2 on.
  • the substrate 1 is a sapphire substrate, and the material of the buffer layer 2 is undoped gallium nitride (GaN).
  • GaN undoped gallium nitride
  • the light-emitting diode of the non-vertical structure of the present invention can directly replace the second electrode 7 and the electron transport layer 6 in the prior art because the graphene material is transparent compared to the prior art.
  • the ITO transparent electrode layer that is, the graphene-based electron transport layer 6 in the present invention corresponds to a combination of the electron transport layer and the ITO transparent electrode layer in the prior art.
  • the LED may also adopt a vertical structure.
  • the first electrode 4, the hole transport layer 3, the light-emitting layer 5, the electron transport layer 6, and the second electrode 7 are stacked in this order from bottom to top, and the sapphire substrate having poor thermal conductivity is removed to improve the heat dissipation effect.
  • the vertical structure of the light emitting diode is compared with the non-vertical light emitting diode, and the first electrode 4 and the second electrode 7 of the non-vertical light emitting diode are located on the same side of the light emitting layer 5, and are generated.
  • the current flows not only in the vertical direction but also in the lateral direction by a certain distance, and the heat generation is high, and the first electrode 4 and the second electrode 7 of the vertical light-emitting diode are located on the upper and lower sides of the light-emitting layer 5, resulting in
  • the current flows only in the vertical direction, there is no lateral current, the current density is more uniform, and less heat is generated.
  • the electron transport layer 6 of the graphene material can further improve the heat dissipation effect and luminous efficiency of the light emitting diode, and improve the light emitting diode. The service life.
  • the present invention provides a light emitting diode comprising: a light emitting layer, an electron transport layer and a hole transport layer respectively contacting the upper and lower sides of the light emitting layer, and a first electrode contacting the hole transport layer And a second electrode in contact with the electron transport layer, wherein the material of the electron transport layer is graphene, and the heat transfer capability of the electron transport layer of the light emitting diode is increased by utilizing the excellent electrical conductivity and thermal conductivity of the graphene material. And electronic transmission capability, which in turn improves the lifetime and luminous efficiency of the LED.

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Abstract

本发明提供一种发光二极管。该发光二极管包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极，其中，所述电子传输层的材料为石墨烯，利用石墨烯材料的优良的电传导能力和热传导能力，增加发光二极管电子传输层的热量散发能力和电子传输能力，进而提升发光二极管的使用寿命和发光效率。

Description

发光二极管 技术领域
本发明涉及显示技术领域，尤其涉及一种发光二极管。
背景技术
发光二极管(Light Emitting Diode，LED)是将电流转化成光的半导体器件。发光二极管发射的光的波长基于其所用的半导体材料而变化，更具体是基于其所用的半导体材料的带隙而变化。LED通常用作显示器、车辆和其它照明应用光源。在LED中，由发光二极管产生的热量直接地影响发光二极管模块的发光性能和使用期限，进一步也会影响手机显示屏或电视显示屏的背光的寿命。如果发光二极管产生的热量长时间留在发光二极管中，则会导致构成发光二极管的晶体结构出现错位(dislocation)和失配(mismatch)，进缩短发光二极管的使用寿命。
现有的发光二极管结构通常包括垂直式结构与非垂直式结构(平面式结构)，其中非垂直式结构的发光二极管中的n电极与p电极位于发光层的同一侧，垂直式结构的发光二级管中的n电极与p电极分别位于发光层的上下两侧，现有的发光二极管由于其电子传输层性能的限制，导致n电极与电子传输层之间流动的电流不能很好的流入发光层，影响发光二极管的发光效率，并且电子传输层不能很好的将热量散发出去，导致发光层的温度过高，尤其是在非垂直结构的发光二极管由于其空穴传输层一侧的蓝宝石基板的导热性很差，在散热就更需要将热量更多的由电子传输层散发出去，因此对电子传输层性能的提升对发光二极管的发光性能和使用寿命有着重要的影响。
石墨烯是由碳原子呈蜂窝状排列构成的二维晶体，具有高透过率，高导热系数，高电子迁移率，低电阻率等特点，优异的性能使得石墨烯及其相关器件已经成为物理、化学、生物以及材料科学领域的一个研究热点。迄今为止，人们已经制备出多种以石墨烯为基本功能单元的器件，包括场效应晶体管、太阳能电池、纳米发电机和传感器等。
发明内容
本发明的目的在于提供一种发光二极管，能够加快发光二极管的热量散发，提升发光二极管的发光效率和使用寿命。
为实现上述目的，本发明提供了一种发光二极管，包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极；所述电子传输层的材料为石墨烯。
所述发光二极管采用非垂直式结构；
所述第一电极和发光层间隔分布于所述空穴传输层上，所述电子传输层设于所述发光层上，所述第二电极设于所述电子传输层上。
所述发光二极管采用垂直式结构，所述第一电极、空穴传输层、发光层、电子传输层、和第二电极自下而上依次层叠设置。
所述第一电极和第二电极的材料均为铝和铜中的一种或二种的组合。
所述空穴传输层的材料N型掺杂的氮化镓。
还包括：基板、以及缓冲层；
所述缓冲层覆盖于所述基板上，所述空穴传输层设于所述缓冲层上。
所述基板为蓝宝石基板。
所述缓冲层的材料为未掺杂的氮化镓。
本发明还提供一种发光二极管，包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极；所述电子传输层的材料为石墨烯；
其中，所述第一电极和第二电极的材料均为铝和铜中的一种或二种的组合；
其中，所述空穴传输层的材料N型掺杂的氮化镓。
本发明的有益效果：本发明提供一种发光二极管，包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极，其中，所述电子传输层的材料为石墨烯，利用石墨烯材料的优良的电传导能力和热传导能力，增加发光二极管电子传输层的热量散发能力和电子传输能力，进而提升发光二极管的使用寿命和发光效率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的发光二极管的第一实施例的示意图；
图2为本发明的发光二极管的第二实施例的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1并结合图2，本发明提供一种发光二极管，包括：发光层5、分别与所述发光层5上下两侧接触的电子传输层6和空穴传输层3、与所述空穴传输层3接触的第一电极4以及与所述电子传输层6接触的第二电极7；所述电子传输层6的材料为石墨烯。
具体地，所述第一电极4和第二电极7分别为发光二极管的n电极和p电极，优选材料为铝和铜中的一种或二种的组合，当然所述第一电极4和第二电极的不限于此也可以为其他的适合的材料。
优选地，所述空穴传输层3的材料N型掺杂的氮化镓，当然所述空穴传输层3的材料也不限于此可以为其他的适合的材料。
值得一提的是，本发明的发光二极管中采用石墨烯材料制作电子传输层6，利用石墨烯材料的优异的导热性能，能够发光层5中聚集的热量快速横向疏导，并慢慢纵向向上扩散，进而提升发光二极管的散热效果，增加发光元件的使用寿命，同时利用石墨烯材料优良的电传导能力，进一步提高电子传输层6的电子传输能力，提升发光二极管的发光效率。
可选地，本发明的发光二极管可以为垂直结构也可以为非垂直结构。
具体地，如图1所示，当所述发光二极管采用非垂直式结构时，所述第一电极4和发光层5间隔分布于所述空穴传输层3上，所述电子传输层6设于所述发光层5上，所述第二电极7设于所述电子传输层6上。
进一步地，所述非垂直式结构的发光二极管还包括一基板1和缓冲层2，其中，所述缓冲层2覆盖于所述基板1上，所述空穴传输层3设于所述缓冲层2上。
优选地，所述基板1为蓝宝石基板，所述缓冲层2的材料为未掺杂的氮化镓(GaN)。
特别地，本发明的非垂直式结构的发光二极管，相比于现有技术，由于石墨烯材料为透明的，因此也可以直接取代现有技术中设置在第二电极7与电子传输层6之间的ITO透明电极层，即本发明中的石墨烯材质的电子传输层6相当于现有技术中的电子传输层和ITO透明电极层的组合。
进一步地，如图2所示，所述发光二极管还可以采用垂直式结构，此 时所述第一电极4、空穴传输层3、发光层5、电子传输层6、和第二电极7自下而上依次层叠设置，去除导热性差的蓝宝石基板，提高散热效果。
需要说明的是，垂直式结构的发光二极管与非垂直式的发光二极管相比于，非垂直式的发光二极管的第一电极4和第二电极7位于所述发光层5的同一侧，产生的电流不仅在会竖直方向流动，还会横向流动一定的距离，发热量较高，而垂直式的发光二极管的第一电极4和第二电极7位于所述发光层5的上下两侧，产生的电流只在竖直方向流动，没有横向电流，电流密度更加均匀，产生的热量较少，配合石墨烯材料的电子传输层6，能够进一步地提升发光二极管的散热效果和发光效率，提升发光二极管的使用寿命。
综上所述，本发明提供一种发光二极管，包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极，其中，所述电子传输层的材料为石墨烯，利用石墨烯材料的优良的电传导能力和热传导能力，增加发光二极管电子传输层的热量散发能力和电子传输能力，进而提升发光二极管的使用寿命和发光效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (14)

  1. 一种发光二极管，包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极；所述电子传输层的材料为石墨烯。
  2. 如权利要求1所述的发光二极管，其中，所述发光二极管采用非垂直式结构；
    所述第一电极和发光层间隔分布于所述空穴传输层上，所述电子传输层设于所述发光层上，所述第二电极设于所述电子传输层上。
  3. 如权利要求1所述的发光二极管，其中，所述发光二极管采用垂直式结构，所述第一电极、空穴传输层、发光层、电子传输层、和第二电极自下而上依次层叠设置。
  4. 如权利要求1所述的发光二极管，其中，所述第一电极和第二电极的材料均为铝和铜中的一种或二种的组合。
  5. 如权利要求1所述的发光二极管，其中，所述空穴传输层的材料N型掺杂的氮化镓。
  6. 如权利要求2所述的发光二极管，还包括：基板、以及缓冲层；
    所述缓冲层覆盖于所述基板上，所述空穴传输层设于所述缓冲层上。
  7. 如权利要求6所述的发光二极管，其中，所述基板为蓝宝石基板。
  8. 如权利要求6所述的发光二极管，其中，所述缓冲层的材料为未掺杂的氮化镓。
  9. 一种发光二极管，包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极；所述电子传输层的材料为石墨烯；
    其中，所述第一电极和第二电极的材料均为铝和铜中的一种或二种的组合；
    其中，所述空穴传输层的材料N型掺杂的氮化镓。
  10. 如权利要求9所述的发光二极管，其中，所述发光二极管采用非垂直式结构；
    所述第一电极和发光层间隔分布于所述空穴传输层上，所述电子传输层设于所述发光层上，所述第二电极设于所述电子传输层上。
  11. 如权利要求9所述的发光二极管，其中，所述发光二极管采用垂直式结构，所述第一电极、空穴传输层、发光层、电子传输层、和第二电 极自下而上依次层叠设置。
  12. 如权利要求10所述的发光二极管，还包括：基板、以及缓冲层；
    所述缓冲层覆盖于所述基板上，所述空穴传输层设于所述缓冲层上。
  13. 如权利要求12所述的发光二极管，其中，所述基板为蓝宝石基板。
  14. 如权利要求12所述的发光二极管，其中，所述缓冲层的材料为未掺杂的氮化镓。
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