CN106816522A - 发光二极管 - Google Patents

发光二极管 Download PDF

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CN106816522A
CN106816522A CN201710098327.0A CN201710098327A CN106816522A CN 106816522 A CN106816522 A CN 106816522A CN 201710098327 A CN201710098327 A CN 201710098327A CN 106816522 A CN106816522 A CN 106816522A
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light emitting
emitting diode
layer
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electron transfer
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程艳
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2017/079908 priority patent/WO2018152939A1/zh
Priority to US15/529,511 priority patent/US10381518B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer

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Abstract

本发明提供一种发光二极管。该发光二极管包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极，其中，所述电子传输层的材料为石墨烯，利用石墨烯材料的优良的电传导能力和热传导能力，增加发光二极管电子传输层的热量散发能力和电子传输能力，进而提升发光二极管的使用寿命和发光效率。

Description

发光二极管
技术领域
本发明涉及显示技术领域，尤其涉及一种发光二极管。
背景技术
发光二极管(Light Emitting Diode，LED)是将电流转化成光的半导体器件。发光二极管发射的光的波长基于其所用的半导体材料而变化，更具体是基于其所用的半导体材料的带隙而变化。LED通常用作显示器、车辆和其它照明应用光源。在LED中，由发光二极管产生的热量直接地影响发光二极管模块的发光性能和使用期限，进一步也会影响手机显示屏或电视显示屏的背光的寿命。如果发光二极管产生的热量长时间留在发光二极管中，则会导致构成发光二极管的晶体结构出现错位(dislocation)和失配(mismatch)，进缩短发光二极管的使用寿命。
现有的发光二极管结构通常包括垂直式结构与非垂直式结构(平面式结构)，其中非垂直式结构的发光二极管中的n电极与p电极位于发光层的同一侧，垂直式结构的发光二级管中的n电极与p电极分别位于发光层的上下两侧，现有的发光二极管由于其电子传输层性能的限制，导致n电极与电子传输层之间流动的电流不能很好的流入发光层，影响发光二极管的发光效率，并且电子传输层不能很好的将热量散发出去，导致发光层的温度过高，尤其是在非垂直结构的发光二极管由于其空穴传输层一侧的蓝宝石基板的导热性很差，在散热就更需要将热量更多的由电子传输层散发出去，因此对电子传输层性能的提升对发光二极管的发光性能和使用寿命有着重要的影响。
石墨烯是由碳原子呈蜂窝状排列构成的二维晶体，具有高透过率，高导热系数，高电子迁移率，低电阻率等特点，优异的性能使得石墨烯及其相关器件已经成为物理、化学、生物以及材料科学领域的一个研究热点。迄今为止，人们已经制备出多种以石墨烯为基本功能单元的器件，包括场效应晶体管、太阳能电池、纳米发电机和传感器等。
发明内容
本发明的目的在于提供一种发光二极管，能够加快发光二极管的热量散发，提升发光二极管的发光效率和使用寿命。
为实现上述目的，本发明提供了一种发光二极管，包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极；所述电子传输层的材料为石墨烯。
所述发光二极管采用非垂直式结构；
所述第一电极和发光层间隔分布于所述空穴传输层上，所述电子传输层设于所述发光层上，所述第二电极设于所述电子传输层上。
所述发光二极管采用垂直式结构，所述第一电极、空穴传输层、发光层、电子传输层、和第二电极自下而上依次层叠设置。
所述第一电极和第二电极的材料均为铝和铜中的一种或二种的组合。
所述空穴传输层的材料N型掺杂的氮化镓。
还包括：基板、以及缓冲层；
所述缓冲层覆盖于所述基板上，所述空穴传输层设于所述缓冲层上。
所述基板为蓝宝石基板。
所述缓冲层的材料为未掺杂的氮化镓。
本发明的有益效果：本发明提供一种发光二极管，包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极，其中，所述电子传输层的材料为石墨烯，利用石墨烯材料的优良的电传导能力和热传导能力，增加发光二极管电子传输层的热量散发能力和电子传输能力，进而提升发光二极管的使用寿命和发光效率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的发光二极管的第一实施例的示意图；
图2为本发明的发光二极管的第二实施例的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1并结合图2，本发明提供一种发光二极管，包括：发光层5、分别与所述发光层5上下两侧接触的电子传输层6和空穴传输层3、与所述空穴传输层3接触的第一电极4以及与所述电子传输层6接触的第二电极7；所述电子传输层6的材料为石墨烯。
具体地，所述第一电极4和第二电极7分别为发光二极管的n电极和p电极，优选材料为铝和铜中的一种或二种的组合，当然所述第一电极4和第二电极的不限于此也可以为其他的适合的材料。
优选地，所述空穴传输层3的材料N型掺杂的氮化镓，当然所述空穴传输层3的材料也不限于此可以为其他的适合的材料。
值得一提的是，本发明的发光二极管中采用石墨烯材料制作电子传输层6，利用石墨烯材料的优异的导热性能，能够发光层5中聚集的热量快速横向疏导，并慢慢纵向向上扩散，进而提升发光二极管的散热效果，增加发光元件的使用寿命，同时利用石墨烯材料优良的电传导能力，进一步提高电子传输层6的电子传输能力，提升发光二极管的发光效率。
可选地，本发明的发光二极管可以为垂直结构也可以为非垂直结构。
具体地，如图1所示，当所述发光二极管采用非垂直式结构时，所述第一电极4和发光层5间隔分布于所述空穴传输层3上，所述电子传输层6设于所述发光层5上，所述第二电极7设于所述电子传输层6上。
进一步地，所述非垂直式结构的发光二极管还包括一基板1和缓冲层2，其中，所述缓冲层2覆盖于所述基板1上，所述空穴传输层3设于所述缓冲层2上。
优选地，所述基板1为蓝宝石基板，所述缓冲层2的材料为未掺杂的氮化镓(GaN)。
特别地，本发明的非垂直式结构的发光二极管，相比于现有技术，由于石墨烯材料为透明的，因此也可以直接取代现有技术中设置在第二电极7与电子传输层6之间的ITO透明电极层，即本发明中的石墨烯材质的电子传输层6相当于现有技术中的电子传输层和ITO透明电极层的组合。
进一步地，如图2所示，所述发光二极管还可以采用垂直式结构，此时所述第一电极4、空穴传输层3、发光层5、电子传输层6、和第二电极7自下而上依次层叠设置，去除导热性差的蓝宝石基板，提高散热效果。
需要说明的是，垂直式结构的发光二极管与非垂直式的发光二极管相比于，非垂直式的发光二极管的第一电极4和第二电极7位于所述发光层2的同一侧，产生的电流不仅在会竖直方向流动，还会横向流动一定的距离，发热量较高，而垂直式的发光二极管的第一电极4和第二电极7位于所述发光层2的上下两侧，产生的电流只在竖直方向流动，没有横向电流，电流密度更加均匀，产生的热量较少，配合石墨烯材料的电子传输层6，能够进一步地提升发光二极管的散热效果和发光效率，提升发光二极管的使用寿命。
综上所述，本发明提供一种发光二极管，包括：发光层、分别与所述发光层上下两侧接触的电子传输层和空穴传输层、与所述空穴传输层接触的第一电极以及与所述电子传输层接触的第二电极，其中，所述电子传输层的材料为石墨烯，利用石墨烯材料的优良的电传导能力和热传导能力，增加发光二极管电子传输层的热量散发能力和电子传输能力，进而提升发光二极管的使用寿命和发光效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (8)

1.一种发光二极管，其特征在于，包括：发光层(5)、分别与所述发光层(5)上下两侧接触的电子传输层(6)和空穴传输层(3)、与所述空穴传输层(3)接触的第一电极(4)以及与所述电子传输层(6)接触的第二电极(7)；所述电子传输层(6)的材料为石墨烯。
2.如权利要求1所述的发光二极管，其特征在于，所述发光二极管采用非垂直式结构；
所述第一电极(4)和发光层(5)间隔分布于所述空穴传输层(3)上，所述电子传输层(6)设于所述发光层(5)上，所述第二电极(7)设于所述电子传输层(6)上。
3.如权利要求1所述的发光二极管，其特征在于，所述发光二极管采用垂直式结构，所述第一电极(4)、空穴传输层(3)、发光层(5)、电子传输层(6)、和第二电极(7)自下而上依次层叠设置。
4.如权利要求1所述的发光二极管，其特征在于，所述第一电极(4)和第二电极(7)的材料均为铝和铜中的一种或二种的组合。
5.如权利要求1所述的发光二极管，其特征在于，所述空穴传输层(3)的材料N型掺杂的氮化镓。
6.如权利要求2所述的发光二极管，其特征在于，还包括：基板(1)、以及缓冲层(2)；
所述缓冲层(2)覆盖于所述基板(1)上，所述空穴传输层(3)设于所述缓冲层(2)上。
7.如权利要求6所述的发光二极管，其特征在于，所述基板(1)为蓝宝石基板。
8.如权利要求6所述的发光二极管，其特征在于，所述缓冲层(2)的材料为未掺杂的氮化镓。
CN201710098327.0A 2017-02-22 2017-02-22 发光二极管 Pending CN106816522A (zh)

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PCT/CN2017/079908 WO2018152939A1 (zh) 2017-02-22 2017-04-10 发光二极管
US15/529,511 US10381518B2 (en) 2017-02-22 2017-04-10 Light-emitting diode

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CN104300052A (zh) * 2014-10-11 2015-01-21 北京工业大学 一种石墨烯结构的led芯片结构及其制备方法

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